TW200725699A - Projection photo mask, laser processing method, laser processing apparatus, and thin film transistor device - Google Patents

Projection photo mask, laser processing method, laser processing apparatus, and thin film transistor device

Info

Publication number
TW200725699A
TW200725699A TW095131877A TW95131877A TW200725699A TW 200725699 A TW200725699 A TW 200725699A TW 095131877 A TW095131877 A TW 095131877A TW 95131877 A TW95131877 A TW 95131877A TW 200725699 A TW200725699 A TW 200725699A
Authority
TW
Taiwan
Prior art keywords
laser processing
photo mask
thin film
film transistor
area
Prior art date
Application number
TW095131877A
Other languages
Chinese (zh)
Inventor
Junichiro Nakayama
Hiroshi Tsunasawa
Ikumi Itsumi
Masashi Maekawa
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200725699A publication Critical patent/TW200725699A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H01L21/0268—Shape of mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)

Abstract

The invention provides a projection photo mask, laser processing method and laser processing apparatus to irradiate target for making uniform crystal. It also provides a thin film transistor device with uniform electric characteristic for irradiating target. The projection photo mask 25 of the invention forms the first light transparent pattern 25a on the first and the fourth areas BA, BD and the second light transparent pattern 25b on the second and the third areas BB, BC. The laser 31 from light source 21 irradiates the installed projection photo mask 25 according to the order in the first area BA, the second area BB, the third area BC, and the fourth area BD. The laser irradiates the semiconductor film 37 through the said the first and the second light transparent patterns 25a, 25b.
TW095131877A 2005-08-29 2006-08-29 Projection photo mask, laser processing method, laser processing apparatus, and thin film transistor device TW200725699A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005248456 2005-08-29
JP2005334880A JP2007096244A (en) 2005-08-29 2005-11-18 Projection mask, laser machining method, laser machining device, and thin-film transistor element

Publications (1)

Publication Number Publication Date
TW200725699A true TW200725699A (en) 2007-07-01

Family

ID=37808810

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095131877A TW200725699A (en) 2005-08-29 2006-08-29 Projection photo mask, laser processing method, laser processing apparatus, and thin film transistor device

Country Status (3)

Country Link
JP (1) JP2007096244A (en)
TW (1) TW200725699A (en)
WO (1) WO2007026723A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI829748B (en) * 2018-08-27 2024-01-21 美商萬騰榮公司 Ultraviolet laser apparatus, method of making electronic part, method of using display fabrication apparatus, and ultraviolet reflective mirror

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101191404B1 (en) * 2006-01-12 2012-10-16 삼성디스플레이 주식회사 Mask for silicone crystallization, method for crystallizing silicone using the same and display device
JP2009289922A (en) * 2008-05-28 2009-12-10 Sharp Corp Mask, laser crystallization apparatus, laser crystallization method, crystal material, and semiconductor device
JP2009302251A (en) * 2008-06-12 2009-12-24 Sharp Corp Laser crystallization device, mask, laser crystallization method, crystal material, and semiconductor element
JP5093815B2 (en) * 2009-02-13 2012-12-12 株式会社日本製鋼所 Method and apparatus for crystallizing amorphous film
US11004682B2 (en) * 2016-12-15 2021-05-11 Sakai Display Products Corporation Laser annealing apparatus, laser annealing method, and mask
JP2019036636A (en) * 2017-08-15 2019-03-07 株式会社ブイ・テクノロジー Laser irradiation device, thin film transistor manufacturing method and projection mask

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001028346A (en) * 1999-07-14 2001-01-30 Sumitomo Heavy Ind Ltd Shutter mechanism for precise irradiation and control method
KR100303142B1 (en) * 1999-10-29 2001-11-02 구본준, 론 위라하디락사 Fabricating method of liquid crystal display pannel
JP3945805B2 (en) * 2001-02-08 2007-07-18 株式会社東芝 Laser processing method, liquid crystal display device manufacturing method, laser processing device, and semiconductor device manufacturing method
KR100379361B1 (en) * 2001-05-30 2003-04-07 엘지.필립스 엘시디 주식회사 crystallization method of a silicon film
US6809801B2 (en) * 2002-03-11 2004-10-26 Sharp Laboratories Of America, Inc. 1:1 projection system and method for laser irradiating semiconductor films
US6733931B2 (en) * 2002-03-13 2004-05-11 Sharp Laboratories Of America, Inc. Symmetrical mask system and method for laser irradiation
JP2004119971A (en) * 2002-09-04 2004-04-15 Sharp Corp Laser processing method and laser processing device
JP2004207691A (en) * 2002-12-11 2004-07-22 Sharp Corp Semiconductor thin film manufacturing method and apparatus, semiconductor thin film manufactured by method, and semiconductor element using thin film
KR100646160B1 (en) * 2002-12-31 2006-11-14 엘지.필립스 엘시디 주식회사 A mask for sequential lateral solidification and a silicon crystallizing method using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI829748B (en) * 2018-08-27 2024-01-21 美商萬騰榮公司 Ultraviolet laser apparatus, method of making electronic part, method of using display fabrication apparatus, and ultraviolet reflective mirror
US11885990B2 (en) 2018-08-27 2024-01-30 Materion Corporation UV reflective mirrors for display fabrication

Also Published As

Publication number Publication date
JP2007096244A (en) 2007-04-12
WO2007026723A1 (en) 2007-03-08

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