TW200625012A - Method for forming photoresist pattern by use of double-layer anti-reflection film - Google Patents

Method for forming photoresist pattern by use of double-layer anti-reflection film

Info

Publication number
TW200625012A
TW200625012A TW094139470A TW94139470A TW200625012A TW 200625012 A TW200625012 A TW 200625012A TW 094139470 A TW094139470 A TW 094139470A TW 94139470 A TW94139470 A TW 94139470A TW 200625012 A TW200625012 A TW 200625012A
Authority
TW
Taiwan
Prior art keywords
reflection film
photoresist
forming
developer liquid
double
Prior art date
Application number
TW094139470A
Other languages
Chinese (zh)
Other versions
TWI414891B (en
Inventor
Tadashi Hatanaka
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW200625012A publication Critical patent/TW200625012A/en
Application granted granted Critical
Publication of TWI414891B publication Critical patent/TWI414891B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

Abstract

A method for forming a pattern, in which both photoresist and anti-reflection film have a rectangular shape, in a lithography process of a semiconductor device production by using an anti-reflection film which is developable by a photoresist developer liquid is disclosed. The method for forming a photoresist pattern is characterized in comprising steps of: forming a first anti-reflection film which is soluble in a photoresist developer liquid; forming a second anti-reflection film, which is soluble in the photoresist developer liquid and whose dissolving rate in the photoresist developer liquid is lower than that of the first anti-reflection film, on the first anti-reflection film; forming a photoresist on the second anti-reflection film; exposing a semiconductor substrate which is covered with the first anti-reflection, the second anti-reflection film and the photoresist; and developing by using the photoresist developer liquid.
TW94139470A 2004-12-03 2005-11-10 Method for forming photoresist pattern by use of doublelayer anti-reflective coating TWI414891B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004351351 2004-12-03

Publications (2)

Publication Number Publication Date
TW200625012A true TW200625012A (en) 2006-07-16
TWI414891B TWI414891B (en) 2013-11-11

Family

ID=36564889

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94139470A TWI414891B (en) 2004-12-03 2005-11-10 Method for forming photoresist pattern by use of doublelayer anti-reflective coating

Country Status (5)

Country Link
JP (1) JP4466879B2 (en)
KR (1) KR101171217B1 (en)
CN (1) CN101065708B (en)
TW (1) TWI414891B (en)
WO (1) WO2006059452A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9482940B2 (en) 2013-10-02 2016-11-01 S&S Tech Co., Ltd. Blankmask and photomask

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7816071B2 (en) * 2005-02-10 2010-10-19 Az Electronic Materials Usa Corp. Process of imaging a photoresist with multiple antireflective coatings
WO2009105556A2 (en) * 2008-02-22 2009-08-27 Brewer Science Inc. Dual-layer light-sensitive developer-soluble bottom anti-reflective coatings for 193-nm lithography
JP2013137334A (en) * 2010-04-21 2013-07-11 Nissan Chem Ind Ltd Resist underlayer film-forming composition for lithography comprising resin containing polyimide structure
SG10201607603VA (en) * 2011-10-10 2016-11-29 Brewer Science Inc Spin-on carbon compositions for lithographic processing
JP2015108644A (en) * 2012-03-22 2015-06-11 日産化学工業株式会社 Composition for forming resist overlay film for lithography
US9012132B2 (en) * 2013-01-02 2015-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Coating material and method for photolithography
US10203602B2 (en) * 2016-09-30 2019-02-12 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5512131A (en) * 1978-07-11 1980-01-28 Hitachi Chem Co Ltd Preparation of polyamic acid for semiconductor treatment
JP3332100B2 (en) * 1992-03-24 2002-10-07 株式会社東芝 Pattern formation method
JP3031214B2 (en) * 1995-09-11 2000-04-10 信越化学工業株式会社 Anti-reflective coating material
JP3738920B2 (en) * 1996-02-16 2006-01-25 富士写真フイルム株式会社 Positive photosensitive lithographic printing plate
JPH1172925A (en) * 1997-07-03 1999-03-16 Toshiba Corp Undercoat layer composition and pattern forming method using the same
EP1016930A1 (en) * 1998-12-28 2000-07-05 Infineon Technologies North America Corp. Bottom antireflective layer operating in destructive interference and absorption modes
KR100510999B1 (en) * 2002-07-22 2005-08-31 주식회사 하이닉스반도체 Pattern forming method of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9482940B2 (en) 2013-10-02 2016-11-01 S&S Tech Co., Ltd. Blankmask and photomask

Also Published As

Publication number Publication date
KR20070086628A (en) 2007-08-27
KR101171217B1 (en) 2012-08-07
JP4466879B2 (en) 2010-05-26
TWI414891B (en) 2013-11-11
CN101065708A (en) 2007-10-31
JPWO2006059452A1 (en) 2008-06-05
CN101065708B (en) 2013-01-02
WO2006059452A1 (en) 2006-06-08

Similar Documents

Publication Publication Date Title
TW200625012A (en) Method for forming photoresist pattern by use of double-layer anti-reflection film
TW200616101A (en) Method for manufacturing semiconductor device
TW201203318A (en) Exposure method, exposure device, and device manufacturing method
TW200609681A (en) Antireflective film-forming composition containing vinyl ether compound
TW200627075A (en) Coating and developing apparatus and coating and developing method
TWI268544B (en) Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof
EP1780773A4 (en) Method of determining exposure conditions, exposure method, exposure apparatus, and method of producing device
US10007191B2 (en) Method for computer modeling and simulation of negative-tone-developable photoresists
TW200745740A (en) Mask pattern generating method
TW200611082A (en) Exposure system and device production method
TW200629464A (en) Coating and developing apparatus and coating and developing method
TW200606594A (en) Method for preparing drawing pattern, method for forming resist pattern and method for controlling exposure apparatus
TW200721260A (en) Substrate processing method, photomask manufacturing method, photomask and device manufacturing method
TW200705113A (en) Exposure method, exposure apparatus, method for manufacturing device, and film evaluation method
TW200619866A (en) Aligner, exposing method, and device manufacturing method
SG130083A1 (en) A system and method for photolithography in semiconductor manufacturing
TW200618058A (en) Immersion photolithography with megasonic rinse
US8527253B2 (en) Modeling an arbitrarily polarized illumination source in an optical lithography system
WO2009041306A1 (en) Method and apparatus for manufacturing semiconductor device and resist material
WO2010030018A3 (en) Pattern forming method and device production method
CN103092008B (en) Non-photosensitive polyimide photo-etching process
CN100498544C (en) Method for reducing critical dimension of photoresist contact hole pattern
KR20130041627A (en) Photolithography method including dual development process
TW200603253A (en) A semiconductor manufacturing method and an exposure mask
JP2005256090A5 (en)