TW200539321A - Method for improving high density plasmachemical vapor deposition process - Google Patents

Abstract

A method for improving a high-density plasma chemical vapor deposition process is described. First, a filling rate equation that is a function of time, a starting value of a filling rate, and a period of time when a filling step is spent are provided. Additionally, the function of time may be a linear function. The high-density plasma chemical vapor deposition process is then performed to fill a predetermined structure on a substrate according to the filling rate equation, the starting value of the filling rate, and the period of time. Furthermore, the filling rate equation is composed of a deposition equation, an ion bombardment equation, and a composition equation thereof.

Description

200539321 ____ V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a method for improving a semiconductor process, and in particular, to a method for improving a high-density plasma chemical vapor deposition process. [Previous technology] In recent years, due to the rapid development of the semiconductor industry, various process technologies and application materials have been greatly developed in order to continuously improve the integration degree and operation efficiency of components in integrated circuits. In general, the thin film materials required for semiconductor devices, whether they are conductors, semiconductors, or dielectric materials, can be obtained by a chemical vapor deposition (CVD) process. Common chemical vapor deposition methods include atmospheric pressure chemical vapor deposition (APCVD) process, low pressure chemical vapor deposition (LPCVD) process, and sub-atmospheric pressure chemical vapor deposition (LP-CVD) process. atmosphere chemical vapor deposition (SACVD) process, plasma enhanced chemical vapor deposition (PECVD) process, and high density plasma chemical vapor deposition (HDP CVD) process, etc. The high-density plasma chemical vapor deposition process is often used to fill gaps and form isolated areas. However, as the component size becomes smaller and smaller, the aspect ratio of the isolation area and the gap (aspect rat i0) is also greatly improved. How to achieve the process quality requirements of seam less and void free , Has become one of the important research and development topics in high-density plasma chemical vapor deposition process.

Page 6 200539321 V. Description of the invention (2) Figures 1 A to 1 C show the process of applying the conventional high-density plasma chemical vapor deposition process to fill trench structures. To avoid the creation of fine seams or holes, manufacturers currently use slower filling rates to fill trench structures with high aspect ratios. However, as shown in Figs. 1A to 1C, when a trench structure 1 2 0 is filled with a filler layer 160 on the substrate 1 0, as the filling step proceeds, the trench structure 1 2 0 The ratio also changes accordingly, so if the trench structure is filled with a certain filling rate 120, it will seriously affect the production efficiency of the process. [Summary of the Invention] Therefore, an object of the present invention is to provide a high-density plasma chemical vapor deposition process for effectively performing a filling step to improve production efficiency and avoid the problems of fine seams or holes. According to the above object of the present invention, a method for improving a high-density plasma chemical vapor deposition process is proposed. It provides a filling step as a function of time to control the filling rate to change with the process time to effectively shorten the time required for the process. On the other hand, the process parameters accompanying the filling step, such as gas flow, radio frequency bias power, and plasma generator power, etc., will be appropriately adjusted according to the filling rate, so that the gas or Effective power utilization. Therefore, the above-mentioned method can effectively perform the filling step to fill the gaps or form isolated areas, thereby improving the production efficiency of the process, and will not form fine seams or holes in the gaps or isolated areas, which will affect the quality of the process. [Embodiment]

200539321

V. Description of the Invention (3) In order to provide more efficient process quality requirements, the method of this development process is as follows. The filling steps are in accordance with the present invention. A preferred embodiment for improving the high density is proposed, and the reference plasma slits and poreless system plasma chemical vapor deposition attachments are detailed as follows, according to a preferred example of the present invention. Flow chart of process improvement method. The :: rate ΓΓΓ is preferably implemented here to provide a filling rate equation, and this filling ifif is a time function that changes with time. , Medium, time function

: ί 二 ί! A linear function shown in Figure A, so the filling rate will linearly change with the process. Because the high-density plasma chemical vapor deposition process uses a plasma generator, such as an inductively coupled (ICP) plasma generator, or an electron cyclotron resonance

Celectiron cyclotron resonance (ECR) plasma generator, etc. to generate a plasma density reaction source, and apply a radio frequency bias at the other end, so that during the filling step, in addition to 'Also bombardment the surface of the filler and have the effect of eliminating fine seams or holes. Therefore, the filling rate can be determined by the deposition rate, the degree of ion bombardment, or a combination thereof, and the deposition rate can be determined by the gas flow, the size of the power source of the plasma generator, or a combination thereof, and the degree of ion bombardment is determined by the gas flow rate and the RF bias Power supply size or combination. In other words, the filling rate equation can be composed of a deposition rate equation, an ion bombardment equation, and a combination equation thereof. In addition, the deposition rate equation may have a gas flow parameter, a plasma generator power parameter, or a combination thereof, and the ion bombardment equation may have a gas flow parameter, a radio frequency bias

200539321 V. Description of the invention (4) Voltage source parameters or their combined parameters. Therefore, when the filling rate is changed, the process parameters, such as gas flow rate, RF bias power or the power source associated with the electro-polymerization, etc., will be appropriately adjusted accordingly. This will not only provide the filling rate of the generator. , Can improve the effective utilization of gas or power. The filling of Tiantian is traced back to the second figure, and then step 230 is performed to provide a filling rate starting from the time of a filling step, and then step 2 50 is performed with the root value and the provided filling rate equation, the filling rate starting value, The above = time is used to perform the high-density plasma chemical vapor deposition process, and the second = predetermined structure on the material, such as a gap structure or a shallow trench isolation (STI) structure. From = the filling rate equation of isolation is a function that changes with time. When inventing the steps, the filling rate can be continuously changed with time. The filling rate of filling is required to improve the production efficiency. To meet different aspect ratios, ^ L Although the embodiment only provides a filling rate square rate ... As shown in the _ = filling results, can also improve the production efficiency of the process, too. ^ ..., hole filling The preferred embodiment of the present invention can be known, should be used This; ::: = this. The filling rate equation < therefore, when the following steps are taken: to fill gaps or isolated areas with continuous time-varying processes;: made by slurry chemical vapor deposition "for an appropriate filling rate, and then = the duration of the sudden addition, When the filling rate is changed, 1 is the same as the production efficiency. So, it is more effective to improve the gas or power supply by adjusting the parameter bar 2 = the process parameters are changed accordingly.

200539321 V. Description of Invention (5) Utilization. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various changes and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. ❿

Page 10 200539321 Brief description of the drawings In order to make the above and other objects, features, and advantages of the present invention more comprehensible, in conjunction with the attached drawings, the description is as follows: Figures 1A to 1C are drawings showing the conventional knowledge FIG. 2 is a flowchart of a method for improving a high-density plasma chemical vapor deposition process in accordance with a preferred embodiment of the present invention; and FIG. 3A and 3B are diagrams showing the relationship between the filling rate and the process progress time. [Simple description of component representative symbols] 1 0 0 Base material 1 2 0 Ditch structure 160 Filling layer 210, 230, 250 steps

Claims (1)

200539321 6. Scope of patent application ^ Contains a method for improving the high-density electropolymerization chemical vapor deposition process, which provides at least one filling function, g + time function; UW filling rate equation system ^ for a starting value of filling rate And at least one; and performing the filling step according to the filling rate equation, the starting value of the filling rate, and the filling time to perform the high-density electropolymerization chemical vapor deposition process. True = filling a predetermined structure. Difference 2. The method for improving the high-density plasma chemical vapor deposition process as described in item 1 of the scope of the patent application, wherein the above-mentioned filling rate equation further includes a deposition rate equation. / 3. The method for improving the high-density plasma chemical vapor deposition process as described in the second item of the patent application range, wherein the above-mentioned deposition rate equation is controlled by a gas flow parameter, a plasma generator power source parameter, or Combination parameters. 4. The method for improving the high-density plasma chemical vapor deposition process as described in item 1 of the scope of the patent application, wherein the above-mentioned filling rate equation further includes an ion bombardment equation. 5. The method for improving the high-density plasma chemical vapor deposition process as described in item 4 of the scope of the patent application, wherein the above-mentioned ion bombardment equation is controlled by a 200539321 6. Scope of patent application Gas flow parameters, a radio frequency bias power supply parameter or a combination of parameters. 6. The method for improving a high-density plasma chemical vapor deposition process according to item 1 of the scope of the patent application, wherein the above-mentioned time function is a linear function. 7. The method for improving the high-density plasma chemical vapor deposition process as described in item 1 of the scope of patent application, wherein the predetermined structure is a gap structure. 8. The method for improving the high-density plasma chemical vapor deposition process according to item 1 of the scope of the patent application, wherein the predetermined structure is a shallow trench isolation structure. 9 · An improvement method for a high-density plasma chemical vapor deposition process, comprising at least: providing at least one filling rate equation, at least one filling rate starting value, and at least one filling step duration, wherein the filling rate equation is a line Time function; and performing the high-density plasma chemical vapor deposition process to fill a predetermined structure according to the filling rate equation, the initial value of the filling rate, and the time of the filling step. 10. The method for improving the high-density plasma chemical vapor deposition process according to item 9 of the scope of the patent application, wherein the above-mentioned filling rate equation further includes a deposition rate equation. Page 13 200539321 VI. Scope of patent application Shen. The phase-controlled number of gas is controlled by the electrical system or degree of the chemical system of the reference department. Please refer to the equations for changes in the amount of application, such as Cheng body • gas production 11 accumulation, Shen phase gasification, chemical density, high density of the 9th paragraph, the paradigm. The method of profit is good, please change the way, such as Cheng Hong's system. 2 Separation of the formula with the inclusion of the formula. The electric side of the Qihecheng group of the qi subject group of the Department of Mathematics of the Department of Mathematics has a high degree of attack or close bombardment. The voltage term described by the source of the electric power is higher than 2 1 and the intermediate frequency is the first range. Some experts please change the application of the flow of the system like the process of gas @ > r 结 学 -P 一一 聚 J The high presupposition of Z Electricity gtj = qiqiwei, Fan Falifang, please change The application of the procedure is as follows: the system of 4 products and the structure of 5 systems; Such as the Cheng Gou Shen phase gas chemical slurry with high electrical density, said the trench is shallow. 1 The structure is predetermined, and the filling process is filled with the Shen Ying phase system gas. The degree of denseness is high, and the degree of denseness of the slurry structure is preliminarily set to one of the following: one containing • material package 6 1 base less Page 14 200539321 VI. The scope of the patent application provides at least a filling rate as a function of time, and this and an ion bombardment equation provides at least a filling rate; and according to the time of the filling arrest rate to proceed. The integrator process' where the above-mentioned parameters are generated by a plasma 1 8. As described in the patent application, the above-mentioned parameters and a radio frequency bias rate equation, in which the filling rate equation 7 and the filling rate equation are formed by the formula: An initial value of the deposition rate equation and at least the time-step formula of the filling step, the filling commandment such as the high-density plasmatization and > ° value and the chemical lice phase deposition process of the filling step. The high-density plasmatization described in item 16 of the park? The deposition rate equation is controlled by a gas :: power source parameter or a combination of parameters. . The ion bombardment equation of the high-density plasma chemical vapor phase described in Item 16 is controlled by a gas flow = power source parameter or a combination of parameters. S 19 The high-density electropolymerization process described in item 16 of the patent scope of the application, complex φ μ, +, pre-milk phase, and the above-mentioned time function is a linear function. 20, ^ The high-density plasma chemical vapor deposition system described in item 16 of the scope of patent application, wherein the predetermined structure is a gap structure or a _ = trench isolation structure. Yigou Page 15