SU1467549A1 - D.c. voltage stabilizer - Google Patents

Abstract

The invention is electrical engineering and can find the right in the sources of the secondary power supply of electronic equipment. The purpose of the invention is to increase reliability by increasing the efficiency of overcurrent protection and power dissipation. The device contains the first, second and third MOS transistors, the fourth, fifth and sixth complementary MOS transistors, the first Zener diode, the static reference node mode, the output voltage divider, the seventh, eighth and ninth MOS transistors, the tenth, eleventh and twelfth complementary MOS transistors, the second Zener diode, the first, second and third resistors. The goal is achieved by introducing an overcurrent and dissipated power protection node. It is advisable: the manufacture of devices using semiconductor integrated technology, which allows minimizing its dimensions and weight. 1 il. Q S (L

Description

one

The invention relates to electrical engineering and can be used in sources of secondary electroplating radioelectronic equipment. The purpose of the invention is to increase the reliability of stabilization by increasing the effectiveness of overcurrent protection and power dissipation.

The drawing shows a circuit diagram of a voltage regulator.

The constant voltage stabilizer does not contain the first 1, second 2 and third 3 MOS transistors of the same conductivity type, the fourth 4, fifth 5

and the sixth 6 MOS transistors of the opposite conductivity type, the first Zener diode 7, the static mode setting node 8, the output voltage divider 9, the source of the first transistor 1 being connected to the common bus, to the cathode of the zener diode 7 and to the common output of the divider 9, the gate to the output of node 8, and the drain to the combined sources of transistors 2 and 3, the gate of transistor 3 is connected to the output of divider 9, and the gate of transistor 2 is connected to the anode of the first zener diode 7 and to the drain of transistor 4, which datvore is combined with the output

one

Od

 sd

four

WITH

31467549

node 8 and with the gate of the transistor 5, the source of which is connected to the drain of transistor 3, with the source of transistor 4 and with the drain of transistor 6, the gate of which is connected to the combined drain of transistors 2 and 5, node 8 is switched on to Mervda input 10 and common buses, input the divider 9 is connected to the output bus 11.

The stabilizer also contains the seventh 12, eighth 13 and ninth 14 MOS transistors with conductivity similar to the transistor t, the tenth 15,

4S

W

S,

(5 16 L, 5

Between the gates of these transistors are connected sensors for output current overload (resistor 19) and power dissipation (resistor 20). As long as the total voltage drop across these sensors is less than the voltage L and, the current flowing through the transistor 14 is greater than the current flowing through the other arm

i l% L L L ff J y G -.- .- y ---

eleventh 16 and twelfth 17 MOP-current (transistor 13). Poetransistors with conductivity similar to transistor 4, second zener diode 18, first 19, second 20 and third 21 resistors, with the sources of transistors 12-14 connected to the common bus bar, the gates of transistors 13 and 14 are connected to the drain of transistor 14 and to the drain of transistor 15, the source of which is combined with the source of the transistor 16 and with the drain of the transistor 25 of the torus 17, the source of which is connected to the input bus 10 and through the second Zener diode 18 and the resistor 21 with the gate of the transistor 15, the drain of the transistor 13 is connected to the drain of the transistor 16 and Q to the gate transistor 12 drain The second is connected to the gate of the transistor 2, the drain of the transistor 6 is connected via the resistor 19 to the gate of transistor 16 and to the output bus 11, and through the resistor 20 to the gate of transistor 15.

The constant voltage stabilizer operates as follows.

The voltage increment at the output through the divider 9 and the error signal amplifier (transistors 1-3 and 5) is transmitted to the gate of the control transistor 6. The conductivity of the transistor 6 is changed so as to compensate for the initial change in the output voltage. Transistors 15 and 16 are made with different ratios of the widths of their channels W, y, W, 6 to the lengths of these channels L and L, g, therefore, the charge voltage p-source is different and differs by

the transistor 13 is saturated and the transistor 12 is closed. As soon as the load current 1 reaches the value determined from the expression

1, whether

,, / R ,, - C (U ,, - U ,,, rUc

) (R

1.0

-f-R ,,,) / (R,

, + R.Q RT. ) Rj

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(2)

the currents in the current repeater arms (transistors 13 and 14) are compared, the gate-source current of transistor 12 increases dramatically, and transistor 12 shunts Zener diode 7, which leads to locking of the control transistor 6. In the expression (2) Ug, voltage at the input and stabilizer outlet; and - the stabilization voltage of the Zener diode 7; if (UBY UBbix) -U-, 5 C O, if (U, -

40

45

5Q

UBb, x) 6UcT.

Thus, compared to the known, the proposed stabilizer has a higher reliability due to the fact that the protection response threshold determined by the difference of the gate-source voltages of a pair of transistors of the differential stage does not depend on the characteristic current or the static current of these transistors.

Claims (1)

Invention Formula A constant voltage stabilizer containing the first, second and third MOS transistors of the same type of conductivity and the fourth, fifth and sixth MOS transistors of the opposite type of conduction, the first stabilizer, the static mode setting node, the output divider voltage, and the source of the first transistor is connected to the common bus, to the cathode of the first zener diode and to the common di ,, .. / 8, e, (one) where m is the technical coefficient; cf - temperature potential; 4S W S, (5 16 L, 5 Between the gates of these transistors are connected sensors for output current overload (resistor 19) and power dissipation (resistor 20). As long as the total voltage drop across these sensors is less than the voltage L and, the current flowing through transistor 14 is greater than the current flowing through the other arm of the turn --- current torch (transistor 13). Current creator (transistor 13). Therefore, the transistor 13 is saturated, and the transistor 12 is closed. As soon as the load current 1 reaches the value determined from the expression 1, whether ,, / R ,, - C (U ,, - U ,,, rUc ) (R 1.0 -f-R ,,,) / (R, , + R.Q RT. ) Rj 49 zi I ,, STR The currents in the current repeater arms (transistors 13 and 14) are compared, the gate-source potential of transistor 12 increases dramatically, and transistor 12 shunts Zener diode 7, which leads to locking of control transistor 6. In the expression (2) Ug, yG is the input and output voltage stabilizer; and - the stabilization voltage of the Zener diode 7; if (UBY UBbix) -U-, 5 C O, if (U, - UBb, x) 6UcT. Thus, compared to the known, the proposed stabilizer has a higher reliability due to the fact that the protection response threshold determined by the difference in gate-source voltage of a pair of transistors of the differential cascade does not depend on the characteristic current or on the static current of these transistors. Invention Formula A DC voltage regulator containing the first, second, and third MOS transistors of the same conductivity type, and the fourth, fifth and sixth opposite-conduction MOS transistors, the first Zener diode, the static reference node, the output voltage divider, and the source of the first transistor is connected to the common bus, to the cathode of the first Zener diode and to the common output of the divider, the gate to the output of the static mode setting node, and the drain to the combined sources of the second and third transistors, the gate of the third transistor It is connected with the output of the divider, the gate of the second transistor is with the anode of the first Zener diode and the drain of the fourth transistor, the gate of which is combined with the output of the static mode setting node and with the gate of the fifth transistor, the source of which is connected to the drain of the third transistor, with the source of the fourth transistor and the source the sixth transistor, the gate of which is connected to the combined drains of the second and fifth transistors, the static mode setting node is connected between the input and common buses, the divider input is connected to the output bus, characterized in that, with the goal of increasing reliability by increasing the effectiveness of overcurrent protection and power dissipation, the seventh eighth, ninth and tenth MOS transistors with a conductivity similar to , ten / the first transistor, and the tenth, eleventh and twelfth MOS transistors with conductivity similar to the fourth transistor, the second Zener diode, three resistors, and the sources of the seventh, eighth and ninth transistors are connected to a common bus, the gates of the eighth and ninth transistors are connected to the drain of the ninth transistor and the drain of the tenth transistor, the source of which is combined with the source of the eleventh transistor and the drain of the twelfth transistor, the source of which is combined with the input bus and through the second zener diode and ne the output resistor is connected to the gate of the tenth transistor, the drain of the eighth transistor is connected to the drain of the eleventh transistor, and to the gate of the seventh transistor, the drain of which is connected to the gate of the second transistor, the drain of the sixth transistor is connected to the gate of the eleventh transistor and output bus, and through the third resistor - with the gate of the tenth transistor. 15 20