SG2013075437A - Faraday shield having plasma density decouplingstructure between tcp coil zones - Google Patents

Faraday shield having plasma density decouplingstructure between tcp coil zones

Info

Publication number
SG2013075437A
SG2013075437A SG2013075437A SG2013075437A SG2013075437A SG 2013075437 A SG2013075437 A SG 2013075437A SG 2013075437 A SG2013075437 A SG 2013075437A SG 2013075437 A SG2013075437 A SG 2013075437A SG 2013075437 A SG2013075437 A SG 2013075437A
Authority
SG
Singapore
Prior art keywords
decouplingstructure
plasma density
faraday shield
tcp coil
coil zones
Prior art date
Application number
SG2013075437A
Inventor
Long Maolin
Paterson Alex
Marsh Ricky
Wu Ying
Drewery John
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/658,652 external-priority patent/US9293353B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG2013075437A publication Critical patent/SG2013075437A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
SG2013075437A 2012-10-23 2013-10-03 Faraday shield having plasma density decouplingstructure between tcp coil zones SG2013075437A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/658,652 US9293353B2 (en) 2011-04-28 2012-10-23 Faraday shield having plasma density decoupling structure between TCP coil zones

Publications (1)

Publication Number Publication Date
SG2013075437A true SG2013075437A (en) 2014-05-29

Family

ID=50885369

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2013075437A SG2013075437A (en) 2012-10-23 2013-10-03 Faraday shield having plasma density decouplingstructure between tcp coil zones

Country Status (3)

Country Link
KR (1) KR102266590B1 (en)
SG (1) SG2013075437A (en)
TW (1) TWI515761B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201502453D0 (en) * 2015-02-13 2015-04-01 Spts Technologies Ltd Plasma producing apparatus
KR102189337B1 (en) * 2019-07-17 2020-12-09 주식회사 유진테크 Apparatus for processing substrate with plasma
CN110416053B (en) * 2019-07-30 2021-03-16 江苏鲁汶仪器有限公司 Inductively coupled plasma processing system
CN110491760B (en) * 2019-08-23 2020-09-15 江苏鲁汶仪器有限公司 Faraday cleaning device and plasma processing system

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6033585A (en) * 1996-12-20 2000-03-07 Lam Research Corporation Method and apparatus for preventing lightup of gas distribution holes
US6523493B1 (en) * 2000-08-01 2003-02-25 Tokyo Electron Limited Ring-shaped high-density plasma source and method
JP2003033647A (en) * 2001-07-23 2003-02-04 Tokyo Ohka Kogyo Co Ltd Plasma treatment device
US6946054B2 (en) * 2002-02-22 2005-09-20 Tokyo Electron Limited Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing
US7829469B2 (en) * 2006-12-11 2010-11-09 Tokyo Electron Limited Method and system for uniformity control in ballistic electron beam enhanced plasma processing system
JP5656458B2 (en) * 2010-06-02 2015-01-21 株式会社日立ハイテクノロジーズ Plasma processing equipment

Also Published As

Publication number Publication date
TWI515761B (en) 2016-01-01
KR20140051806A (en) 2014-05-02
TW201432777A (en) 2014-08-16
KR102266590B1 (en) 2021-06-18

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