SG152949A1 - Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit - Google Patents
Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuitInfo
- Publication number
- SG152949A1 SG152949A1 SG200718154-8A SG2007181548A SG152949A1 SG 152949 A1 SG152949 A1 SG 152949A1 SG 2007181548 A SG2007181548 A SG 2007181548A SG 152949 A1 SG152949 A1 SG 152949A1
- Authority
- SG
- Singapore
- Prior art keywords
- strained channel
- channel transistor
- integrated circuit
- semiconductor component
- region
- Prior art date
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
A semiconductor chip includes a semiconductor substrate 126, in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136. A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141, formed in the substrate oppositely adjacent a strained channel region 143. (FIG. 2)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US49781903P | 2003-08-26 | 2003-08-26 | |
US10/729,095 US7112495B2 (en) | 2003-08-15 | 2003-12-05 | Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
SG152949A1 true SG152949A1 (en) | 2009-06-29 |
Family
ID=34890363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200718154-8A SG152949A1 (en) | 2003-08-26 | 2004-02-11 | Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit |
Country Status (2)
Country | Link |
---|---|
CN (2) | CN2724204Y (en) |
SG (1) | SG152949A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG152949A1 (en) * | 2003-08-26 | 2009-06-29 | Taiwan Semiconductor Mfg | Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit |
JP5114919B2 (en) * | 2006-10-26 | 2013-01-09 | 富士通セミコンダクター株式会社 | Semiconductor device and manufacturing method thereof |
US7902032B2 (en) * | 2008-01-21 | 2011-03-08 | Texas Instruments Incorporated | Method for forming strained channel PMOS devices and integrated circuits therefrom |
US8558289B2 (en) * | 2009-07-30 | 2013-10-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistors having a composite strain structure, integrated circuits, and fabrication methods thereof |
US8377784B2 (en) * | 2010-04-22 | 2013-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating a semiconductor device |
US10330550B2 (en) * | 2015-12-03 | 2019-06-25 | Kistler Holding Ag | Piezoelectric pressure sensor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3443343B2 (en) * | 1997-12-03 | 2003-09-02 | 松下電器産業株式会社 | Semiconductor device |
SG152949A1 (en) * | 2003-08-26 | 2009-06-29 | Taiwan Semiconductor Mfg | Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit |
-
2004
- 2004-02-11 SG SG200718154-8A patent/SG152949A1/en unknown
- 2004-08-16 CN CN 200420084399 patent/CN2724204Y/en not_active Expired - Lifetime
- 2004-08-16 CN CNB200410058449XA patent/CN100345298C/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN1645616A (en) | 2005-07-27 |
CN100345298C (en) | 2007-10-24 |
CN2724204Y (en) | 2005-09-07 |
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