SG152949A1 - Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit - Google Patents

Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit

Info

Publication number
SG152949A1
SG152949A1 SG200718154-8A SG2007181548A SG152949A1 SG 152949 A1 SG152949 A1 SG 152949A1 SG 2007181548 A SG2007181548 A SG 2007181548A SG 152949 A1 SG152949 A1 SG 152949A1
Authority
SG
Singapore
Prior art keywords
strained channel
channel transistor
integrated circuit
semiconductor component
region
Prior art date
Application number
SG200718154-8A
Inventor
Chih-Hsin Ko
Wen-Chin Lee
Yee-Chia Yeo
Chun-Chieh Lin
Chenming Hu
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/729,095 external-priority patent/US7112495B2/en
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of SG152949A1 publication Critical patent/SG152949A1/en

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A semiconductor chip includes a semiconductor substrate 126, in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136. A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141, formed in the substrate oppositely adjacent a strained channel region 143. (FIG. 2)
SG200718154-8A 2003-08-26 2004-02-11 Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit SG152949A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49781903P 2003-08-26 2003-08-26
US10/729,095 US7112495B2 (en) 2003-08-15 2003-12-05 Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit

Publications (1)

Publication Number Publication Date
SG152949A1 true SG152949A1 (en) 2009-06-29

Family

ID=34890363

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200718154-8A SG152949A1 (en) 2003-08-26 2004-02-11 Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit

Country Status (2)

Country Link
CN (2) CN2724204Y (en)
SG (1) SG152949A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG152949A1 (en) * 2003-08-26 2009-06-29 Taiwan Semiconductor Mfg Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
JP5114919B2 (en) * 2006-10-26 2013-01-09 富士通セミコンダクター株式会社 Semiconductor device and manufacturing method thereof
US7902032B2 (en) * 2008-01-21 2011-03-08 Texas Instruments Incorporated Method for forming strained channel PMOS devices and integrated circuits therefrom
US8558289B2 (en) * 2009-07-30 2013-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Transistors having a composite strain structure, integrated circuits, and fabrication methods thereof
US8377784B2 (en) * 2010-04-22 2013-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a semiconductor device
US10330550B2 (en) * 2015-12-03 2019-06-25 Kistler Holding Ag Piezoelectric pressure sensor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3443343B2 (en) * 1997-12-03 2003-09-02 松下電器産業株式会社 Semiconductor device
SG152949A1 (en) * 2003-08-26 2009-06-29 Taiwan Semiconductor Mfg Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit

Also Published As

Publication number Publication date
CN1645616A (en) 2005-07-27
CN100345298C (en) 2007-10-24
CN2724204Y (en) 2005-09-07

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