SG115693A1 - Method for coating a substrate for euv lithography and substrate with photoresist layer - Google Patents

Method for coating a substrate for euv lithography and substrate with photoresist layer

Info

Publication number
SG115693A1
SG115693A1 SG200402728A SG200402728A SG115693A1 SG 115693 A1 SG115693 A1 SG 115693A1 SG 200402728 A SG200402728 A SG 200402728A SG 200402728 A SG200402728 A SG 200402728A SG 115693 A1 SG115693 A1 SG 115693A1
Authority
SG
Singapore
Prior art keywords
substrate
coating
photoresist layer
euv lithography
euv
Prior art date
Application number
SG200402728A
Inventor
Ingen Schenau Koen Van
Marcel Mathijs Theodo Dierichs
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG115693A1 publication Critical patent/SG115693A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/093—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antistatic means, e.g. for charge depletion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
SG200402728A 2003-05-21 2004-05-17 Method for coating a substrate for euv lithography and substrate with photoresist layer SG115693A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03076531 2003-05-21

Publications (1)

Publication Number Publication Date
SG115693A1 true SG115693A1 (en) 2005-10-28

Family

ID=33522345

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200402728A SG115693A1 (en) 2003-05-21 2004-05-17 Method for coating a substrate for euv lithography and substrate with photoresist layer

Country Status (6)

Country Link
US (1) US20050008864A1 (en)
JP (1) JP4036849B2 (en)
KR (1) KR100713190B1 (en)
CN (1) CN1573541A (en)
SG (1) SG115693A1 (en)
TW (1) TWI265381B (en)

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CN103649830B (en) * 2011-07-08 2018-06-01 Asml荷兰有限公司 Lithographic patterning process and the resist wherein used
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JPWO2013051442A1 (en) 2011-10-06 2015-03-30 日産化学工業株式会社 Composition for forming resist upper layer film for lithography
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JP2015172606A (en) * 2012-07-25 2015-10-01 日産化学工業株式会社 Resist upper-layer film forming composition for lithography and semiconductor-device manufacturing process using the same
KR102195151B1 (en) 2012-09-07 2020-12-24 닛산 가가쿠 가부시키가이샤 Composition for forming resist upper layer film for lithography and method for manufacturing semiconductor device using same
JP5768788B2 (en) * 2012-09-21 2015-08-26 信越化学工業株式会社 Resist protective film material and pattern forming method
JP5768789B2 (en) * 2012-09-21 2015-08-26 信越化学工業株式会社 Resist material and pattern forming method using the same
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CN104937493B (en) 2013-01-24 2019-11-08 日产化学工业株式会社 Photoetching resistant upper layer film formation composition and manufacturing method for semiconductor device
WO2014119396A1 (en) * 2013-01-31 2014-08-07 富士フイルム株式会社 Pattern forming method, method for manufacturing electronic device using same, and electronic device
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US9417515B2 (en) 2013-03-14 2016-08-16 Applied Materials, Inc. Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US9632411B2 (en) 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
US9612521B2 (en) 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
JP6157160B2 (en) 2013-03-15 2017-07-05 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ Upper layer film forming composition and resist pattern forming method using the same
WO2015046327A1 (en) * 2013-09-26 2015-04-02 独立行政法人物質・材料研究機構 Highly sensitive multilayer resist film and method for improving photosensitivity of resist film
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KR102061488B1 (en) 2014-05-21 2020-01-03 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. Top-layer membrane formation composition and method for forming resist pattern using same
KR102432661B1 (en) 2015-07-07 2022-08-17 삼성전자주식회사 Photoresist composition for extreme ultraviolet and method of forming photoresist pattern using the same
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
CN109313395B (en) 2016-05-13 2021-05-14 东京毅力科创株式会社 Critical dimension control through the use of light agents
KR102475021B1 (en) 2016-05-13 2022-12-06 도쿄엘렉트론가부시키가이샤 Critical dimension control by use of photosensitive chemicals or photosensitive chemically amplified resists
KR101850010B1 (en) 2016-12-07 2018-04-19 한국생산기술연구원 Method of Fabricating nano pattern using high etching contrast materials involving carborane complex
JP6875325B2 (en) * 2018-05-21 2021-05-19 信越化学工業株式会社 Pattern formation method
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KR102639026B1 (en) * 2019-04-12 2024-02-21 에이에스엠엘 네델란즈 비.브이. Method and apparatus for forming a layer of patterned material
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WO2021034567A1 (en) 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
WO2023243586A1 (en) * 2022-06-14 2023-12-21 セントラル硝子株式会社 Electronic device manufacturing method and layered body
WO2023243585A1 (en) * 2022-06-14 2023-12-21 セントラル硝子株式会社 Resin composition for forming resist upper layer film, pattern forming method, and electronic device manufacturing method

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Also Published As

Publication number Publication date
JP4036849B2 (en) 2008-01-23
KR20040101025A (en) 2004-12-02
US20050008864A1 (en) 2005-01-13
TWI265381B (en) 2006-11-01
JP2004348133A (en) 2004-12-09
CN1573541A (en) 2005-02-02
KR100713190B1 (en) 2007-05-02
TW200510955A (en) 2005-03-16

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