SG11202107162UA - Plasma treatment device and plasma treatment method - Google Patents
Plasma treatment device and plasma treatment methodInfo
- Publication number
- SG11202107162UA SG11202107162UA SG11202107162UA SG11202107162UA SG11202107162UA SG 11202107162U A SG11202107162U A SG 11202107162UA SG 11202107162U A SG11202107162U A SG 11202107162UA SG 11202107162U A SG11202107162U A SG 11202107162UA SG 11202107162U A SG11202107162U A SG 11202107162UA
- Authority
- SG
- Singapore
- Prior art keywords
- plasma treatment
- treatment device
- treatment method
- plasma
- treatment
- Prior art date
Links
- 238000009832 plasma treatment Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019001662 | 2019-01-09 | ||
| JP2019018833 | 2019-02-05 | ||
| PCT/JP2019/049499 WO2020145051A1 (en) | 2019-01-09 | 2019-12-17 | Plasma treatment device and plasma treatment method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202107162UA true SG11202107162UA (en) | 2021-07-29 |
Family
ID=71521294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202107162UA SG11202107162UA (en) | 2019-01-09 | 2019-12-17 | Plasma treatment device and plasma treatment method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20220084787A1 (en) |
| JP (2) | JP7297795B2 (en) |
| KR (1) | KR20210111269A (en) |
| CN (1) | CN113228830A (en) |
| SG (1) | SG11202107162UA (en) |
| TW (1) | TW202042598A (en) |
| WO (1) | WO2020145051A1 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| JP7297795B2 (en) * | 2019-01-09 | 2023-06-26 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
| CN113169026B (en) | 2019-01-22 | 2024-04-26 | 应用材料公司 | Feedback loop for controlling pulse voltage waveform |
| US11848176B2 (en) | 2020-07-31 | 2023-12-19 | Applied Materials, Inc. | Plasma processing using pulsed-voltage and radio-frequency power |
| JP7309799B2 (en) * | 2020-10-30 | 2023-07-18 | 東京エレクトロン株式会社 | Etching method and plasma processing apparatus |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| CN116686070A (en) * | 2020-12-10 | 2023-09-01 | 东京毅力科创株式会社 | Plasma processing method and plasma processing apparatus |
| CN116803213A (en) * | 2021-02-04 | 2023-09-22 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| WO2023189292A1 (en) * | 2022-03-31 | 2023-10-05 | 東京エレクトロン株式会社 | Plasma processing apparatus |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3700278B2 (en) | 1996-08-23 | 2005-09-28 | ソニー株式会社 | Manufacturing method of semiconductor device having dual gate structure |
| JP2920188B1 (en) * | 1998-06-26 | 1999-07-19 | 日新電機株式会社 | Pulse bias hydrogen negative ion implantation method and implantation apparatus |
| JP4538209B2 (en) * | 2003-08-28 | 2010-09-08 | 株式会社日立ハイテクノロジーズ | Manufacturing method of semiconductor device |
| JP5221403B2 (en) * | 2009-01-26 | 2013-06-26 | 東京エレクトロン株式会社 | Plasma etching method, plasma etching apparatus and storage medium |
| JP2010238881A (en) * | 2009-03-31 | 2010-10-21 | Tokyo Electron Ltd | Plasma processing apparatus and plasma processing method |
| US8404598B2 (en) * | 2009-08-07 | 2013-03-26 | Applied Materials, Inc. | Synchronized radio frequency pulsing for plasma etching |
| JP6224958B2 (en) * | 2013-02-20 | 2017-11-01 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
| JP5701958B2 (en) * | 2013-10-15 | 2015-04-15 | 東京エレクトロン株式会社 | Substrate processing equipment |
| JP6396822B2 (en) * | 2015-02-16 | 2018-09-26 | 東京エレクトロン株式会社 | Method for controlling potential of susceptor of plasma processing apparatus |
| JP6479698B2 (en) * | 2016-02-18 | 2019-03-06 | 東芝メモリ株式会社 | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
| JP6770868B2 (en) * | 2016-10-26 | 2020-10-21 | 東京エレクトロン株式会社 | Method for impedance matching of plasma processing equipment |
| JP6697372B2 (en) * | 2016-11-21 | 2020-05-20 | キオクシア株式会社 | Dry etching method and semiconductor device manufacturing method |
| JP7297795B2 (en) * | 2019-01-09 | 2023-06-26 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
-
2019
- 2019-12-17 JP JP2020565660A patent/JP7297795B2/en active Active
- 2019-12-17 WO PCT/JP2019/049499 patent/WO2020145051A1/en active Application Filing
- 2019-12-17 KR KR1020217023745A patent/KR20210111269A/en unknown
- 2019-12-17 US US17/421,001 patent/US20220084787A1/en active Pending
- 2019-12-17 SG SG11202107162UA patent/SG11202107162UA/en unknown
- 2019-12-17 CN CN201980087489.1A patent/CN113228830A/en active Pending
- 2019-12-19 TW TW108146683A patent/TW202042598A/en unknown
-
2023
- 2023-06-14 JP JP2023097775A patent/JP2023115076A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020145051A1 (en) | 2020-07-16 |
| KR20210111269A (en) | 2021-09-10 |
| CN113228830A (en) | 2021-08-06 |
| JP2023115076A (en) | 2023-08-18 |
| JPWO2020145051A1 (en) | 2021-11-18 |
| JP7297795B2 (en) | 2023-06-26 |
| US20220084787A1 (en) | 2022-03-17 |
| TW202042598A (en) | 2020-11-16 |
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