SG11202001854VA - Compositions and methods for etching silicon nitride-containing substrates - Google Patents

Compositions and methods for etching silicon nitride-containing substrates

Info

Publication number
SG11202001854VA
SG11202001854VA SG11202001854VA SG11202001854VA SG11202001854VA SG 11202001854V A SG11202001854V A SG 11202001854VA SG 11202001854V A SG11202001854V A SG 11202001854VA SG 11202001854V A SG11202001854V A SG 11202001854VA SG 11202001854V A SG11202001854V A SG 11202001854VA
Authority
SG
Singapore
Prior art keywords
compositions
methods
silicon nitride
etching silicon
containing substrates
Prior art date
Application number
SG11202001854VA
Inventor
Emanuel Cooper
Steven Bilodeau
Wen-Haw Dai
Min-Chieh Yang
Sheng-Hung Tu
Hsing-Chen Wu
Sean Kim
Seongjin Hong
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of SG11202001854VA publication Critical patent/SG11202001854VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
SG11202001854VA 2017-09-06 2018-09-06 Compositions and methods for etching silicon nitride-containing substrates SG11202001854VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762554772P 2017-09-06 2017-09-06
PCT/US2018/049701 WO2019051053A1 (en) 2017-09-06 2018-09-06 Compositions and methods for etching silicon nitride-containing substrates

Publications (1)

Publication Number Publication Date
SG11202001854VA true SG11202001854VA (en) 2020-03-30

Family

ID=65518793

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202001854VA SG11202001854VA (en) 2017-09-06 2018-09-06 Compositions and methods for etching silicon nitride-containing substrates

Country Status (7)

Country Link
US (1) US10651045B2 (en)
JP (2) JP7026782B2 (en)
KR (2) KR102436721B1 (en)
CN (2) CN111108176B (en)
SG (1) SG11202001854VA (en)
TW (1) TWI684640B (en)
WO (1) WO2019051053A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190051656A (en) * 2017-11-07 2019-05-15 삼성전자주식회사 Composition for etching, method of etching silicon nitride layer, and method for manufacturing semiconductor device
JP7432092B2 (en) * 2018-07-20 2024-02-16 東京エレクトロン株式会社 Silicon nitride etching and silica deposition control in 3D NAND structures
US11075218B2 (en) * 2019-05-22 2021-07-27 Sandisk Technologies Llc Method of making a three-dimensional memory device using silicon nitride etching end point detection
KR20210026307A (en) * 2019-08-29 2021-03-10 에스케이이노베이션 주식회사 Etching composition, method for etching insulating layer of semiconductor devices using the same and method for preparing semiconductor devices
KR20210028447A (en) 2019-09-04 2021-03-12 에스케이이노베이션 주식회사 Etching composition, method for etching insulating layer of semiconductor devices using the same and method for preparing semiconductor devices
TWI821833B (en) * 2019-10-09 2023-11-11 美商恩特葛瑞斯股份有限公司 Wet etching composition
KR102520371B1 (en) * 2019-10-18 2023-04-10 삼성에스디아이 주식회사 Etching composition for silicon nitride layer and etching process of silicon nitride layer using the same
KR20210050871A (en) * 2019-10-29 2021-05-10 오씨아이 주식회사 Etching solution for silicon nitride layer and method for preparing semiconductor device using the same
CN110846040A (en) * 2019-11-08 2020-02-28 湖北兴福电子材料有限公司 High-silicon-content phosphate etching solution and preparation method thereof
US11024512B1 (en) 2020-03-06 2021-06-01 International Business Machines Corporation Selective etch formulation for silicon oxide
KR20230040369A (en) 2020-07-30 2023-03-22 엔테그리스, 아이엔씨. Compositions and methods for selectively etching silicon nitride films
CN111925805B (en) * 2020-08-14 2021-09-28 上海新阳半导体材料股份有限公司 Etching solution composition, preparation method and application thereof
CN111849487B (en) * 2020-08-14 2021-09-28 上海新阳半导体材料股份有限公司 High-selectivity silicon nitride etching solution, and preparation method and application thereof
KR102345842B1 (en) 2020-09-21 2021-12-31 주식회사 이엔에프테크놀로지 Silicon nitride layer etching composition and etching method using the same
EP4337744A1 (en) * 2021-05-12 2024-03-20 Entegris, Inc. Selective etchant compositions and methods
JP7199621B1 (en) * 2021-06-14 2023-01-05 ラサ工業株式会社 Etchant composition
CN115894077B (en) * 2022-10-10 2023-07-25 湖北兴福电子材料股份有限公司 Selective etching solution for 3D NAND structure sheet

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04257593A (en) 1991-02-08 1992-09-11 Shin Etsu Chem Co Ltd Organosilicon compound
JP3467411B2 (en) * 1998-08-07 2003-11-17 松下電器産業株式会社 Etching solution, method for producing the same and etching method
US6162370A (en) 1998-08-28 2000-12-19 Ashland Inc. Composition and method for selectively etching a silicon nitride film
JP2007012640A (en) * 2005-06-03 2007-01-18 Tosoh Corp Composition for etching
KR100706822B1 (en) * 2005-10-17 2007-04-12 삼성전자주식회사 Composition for removing an insulation material, method of removing an insulation layer and method of recycling a substrate using the same
WO2007062046A2 (en) 2005-11-25 2007-05-31 Vesta Research Ltd. Process for producing a silicon nitride compound
US8025811B2 (en) * 2006-03-29 2011-09-27 Intel Corporation Composition for etching a metal hard mask material in semiconductor processing
US8778210B2 (en) * 2006-12-21 2014-07-15 Advanced Technology Materials, Inc. Compositions and methods for the selective removal of silicon nitride
KR101097277B1 (en) * 2009-10-07 2011-12-22 솔브레인 주식회사 A Composition for wet etching
JP2012033561A (en) * 2010-07-28 2012-02-16 Sanyo Chem Ind Ltd Etchant for silicon nitride
CN102443395B (en) * 2010-09-30 2016-01-20 韩国泰科诺赛美材料株式会社 For the composition of wet etching silicon-dioxide
JP2012233243A (en) * 2011-05-09 2012-11-29 Nippon Paint Co Ltd Chemical conversion treatment agent for surface treatment of metal substrate, and surface treatment method of metal substrate using same
KR101782329B1 (en) * 2011-10-18 2017-09-28 삼성전자주식회사 Compositions for etching and methods for forming semiconductor memory devices using the same
JP2014099480A (en) * 2012-11-13 2014-05-29 Fujifilm Corp Semiconductor substrate etching method and semiconductor element manufacturing method
JP6580397B2 (en) * 2014-07-17 2019-09-25 ソウルブレイン シーオー．， エルティーディー． Etching composition and semiconductor device manufacturing method using the same
US9868902B2 (en) * 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching
KR20160050536A (en) 2014-10-30 2016-05-11 램테크놀러지 주식회사 Etchant compositions for nitride layers and methods of manufacturing semiconductor devices using the same
US10301580B2 (en) * 2014-12-30 2019-05-28 Versum Materials Us, Llc Stripping compositions having high WN/W etching selectivity
KR101728951B1 (en) * 2015-06-25 2017-04-21 오씨아이 주식회사 Etching solution for silicon nitride layer
KR20170009240A (en) * 2015-07-16 2017-01-25 동우 화인켐 주식회사 Non-fluorinated type etching composition for silicon nitride layer
KR102545801B1 (en) * 2015-12-04 2023-06-21 솔브레인 주식회사 Composition for etching and manufacturing method of semiconductor device using the same
KR101730453B1 (en) * 2016-07-26 2017-04-27 램테크놀러지 주식회사 Etchant compositions for nitride layers and methods of manufacturing semiconductor devices using the same

Also Published As

Publication number Publication date
WO2019051053A1 (en) 2019-03-14
KR102399990B1 (en) 2022-05-23
CN113817471B (en) 2022-11-15
KR20220070055A (en) 2022-05-27
JP7026782B2 (en) 2022-02-28
US10651045B2 (en) 2020-05-12
JP7282938B2 (en) 2023-05-29
US20190074188A1 (en) 2019-03-07
KR20200039801A (en) 2020-04-16
KR102436721B1 (en) 2022-08-29
CN111108176B (en) 2021-10-08
TW201920615A (en) 2019-06-01
JP2020533786A (en) 2020-11-19
TWI684640B (en) 2020-02-11
JP2022078087A (en) 2022-05-24
CN111108176A (en) 2020-05-05
CN113817471A (en) 2021-12-21

Similar Documents

Publication Publication Date Title
SG11202001854VA (en) Compositions and methods for etching silicon nitride-containing substrates
IL256951A (en) Compositions and methods for depositing silicon nitride films
EP3385353A4 (en) Composition for etching and method for manufacturing semiconductor device using same
SG10201609929QA (en) Etching compositions and methods for using same
EP3358614A4 (en) Circuit substrate and semiconductor device
IL261283A (en) Compositions and methods using same for deposition of silicon-containing film
SG10201502280PA (en) Compositions and methods for the deposition of silicon oxide films
EP3314658A4 (en) Gan devices on engineered silicon substrates
EP3271937A4 (en) Method for transfer of semiconductor devices
EP3288063A4 (en) Pre-alignment device and method for wafer
IL260069A (en) Compositions and methods using same for deposition of silicon-containing film
EP3261114A4 (en) Composition for silicon wafer polishing and polishing method
SG11202103910PA (en) Silicon nitride etching composition and method
IL253202A0 (en) Stripping compositions for removing photoresists from semiconductor substrates
EP3344716A4 (en) Methods and compositions for processing dielectric substrate
EP3489990A4 (en) Semiconductor substrate
EP3323142A4 (en) Methods and compositions for processing dielectric substrate
EP3406684A4 (en) Polishing composition and method for polishing silicon substrate
IL283492A (en) Etching compositions
EP3159915A4 (en) Method for polishing silicon wafer, polishing composition, and polishing composition set
EP3163600A4 (en) Composition for polishing silicon wafers
PT2974822T (en) Method of dicing thin semiconductor substrates
EP3258483A4 (en) Method for polishing silicon wafer and surface treatment composition
EP3442038A4 (en) Semiconductor wafer
SG11202003348YA (en) Etching compositions