SG11201810163VA - Hydrogenated isotopically enriched boron trifluoride dopant source gas composition - Google Patents

Hydrogenated isotopically enriched boron trifluoride dopant source gas composition

Info

Publication number
SG11201810163VA
SG11201810163VA SG11201810163VA SG11201810163VA SG11201810163VA SG 11201810163V A SG11201810163V A SG 11201810163VA SG 11201810163V A SG11201810163V A SG 11201810163VA SG 11201810163V A SG11201810163V A SG 11201810163VA SG 11201810163V A SG11201810163V A SG 11201810163VA
Authority
SG
Singapore
Prior art keywords
international
commerce
source gas
drive
dopant source
Prior art date
Application number
SG11201810163VA
Inventor
Steven Bishop
Sharad N Yedave
Oleg Bly
Joseph Sweeney
Ying Tang
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of SG11201810163VA publication Critical patent/SG11201810163VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/06—Boron halogen compounds
    • C01B35/061—Halides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization 11111111011110111010101111101011111011101011111011110110111101111101111011111 International Bureau ... .... ..Yjd (10) International Publication Number (43) International Publication Date ..... ...r .....1 WO 2017/172618 Al 5 October 2017 (05.10.2017) WIP0 I PCT (51) International Patent Classification: (74) Agent: GATES, Catherine D.; Entegris, Inc., 129 Con- CO1B 35/06 (2006.01) H01J 37/317 (2006.01) cord Road, Building 2, Billerica, MA 01821 (US). H01J 37/08 (2006.01) (81) Designated States (unless otherwise indicated, for every (21) International Application Number: kind of national protection available): AE, AG, AL, AM, PCT/US2017/024312 AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, (22) International Filing Date: DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, 27 March 2017 (27.03.2017) HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, (25) Filing Language: English KP, MD, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, (26) Publication Language: English NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, (30) Priority Data: RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, 62/314,241 28 March 2016 (28.03.2016) US TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (71) Applicant: ENTEGRIS, INC. [US/US]; 129 Concord Road, Building 2, Billerica, MA 01821 (US). (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, (72) Inventors: BISHOP, Steven; 7 Commerce Drive, Dan- GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, bury, CT 06810 (US). YEDAVE, Sharad N.; 7 Commerce TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, Drive, Danbury, CT 06810 (US). BLY, Oleg; 7 Commerce TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, Drive, Danbury, CT 06810 (US). SWEENEY, Joseph; 7 DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, Commerce Drive, Danbury, CT 06810 (US). TANG, Ying; LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, = 7 Commerce Drive, Danbury, CT 06810 (US). SM, GW, KM, ML, MR, NE, SN, TD, TG). TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, [Continued on next page] = (54) Title: HYDROGENATED ISOTOPICALLY ENRICHED BORONT TRIFLUORIDE DOPANT SOURCE GAS COMPOSI- TION = (57) : A hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition. The composition contains (i) boron trifluor- ide isotopically enriched above natural abundance in boron of atomic mass 11 (UB), and (ii) hydrogen in an amount of from 2 to 6.99 vol.%, based on total volume of boron trifluoride and hydrogen in the composition. Also de- scribed are methods of use of such dopant source gas composition, and asso - = = = sw dated apparatus therefor. = = = = = = _ 1-1 GC 11 ei IN ,-1 FIG. 1 IN ,-1 ei O WO 2017/172618 Al MIDEDIMOMOIDERMEMOMOINIHOHEM111111111111110110111111 Published: — with international search report (Art. 21(3))
SG11201810163VA 2016-03-28 2017-03-27 Hydrogenated isotopically enriched boron trifluoride dopant source gas composition SG11201810163VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662314241P 2016-03-28 2016-03-28
PCT/US2017/024312 WO2017172618A1 (en) 2016-03-28 2017-03-27 Hydrogenated isotopically enriched boront trifluoride dopant source gas composition

Publications (1)

Publication Number Publication Date
SG11201810163VA true SG11201810163VA (en) 2018-12-28

Family

ID=58668943

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201910772PA SG10201910772PA (en) 2016-03-28 2017-03-27 Hydrogenated isotopically enriched boron trifluoride dopant source gas composition
SG11201810163VA SG11201810163VA (en) 2016-03-28 2017-03-27 Hydrogenated isotopically enriched boron trifluoride dopant source gas composition

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201910772PA SG10201910772PA (en) 2016-03-28 2017-03-27 Hydrogenated isotopically enriched boron trifluoride dopant source gas composition

Country Status (7)

Country Link
US (1) US10920087B2 (en)
EP (1) EP3436404B1 (en)
KR (1) KR102194518B1 (en)
CN (1) CN109195910B (en)
SG (2) SG10201910772PA (en)
TW (1) TWI636013B (en)
WO (1) WO2017172618A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102159899B1 (en) * 2015-05-12 2020-09-24 엔테그리스, 아이엔씨. Valve assemblies and fluid storage and dispensing packages comprising same
KR102623884B1 (en) * 2018-12-15 2024-01-10 엔테그리스, 아이엔씨. Fluoride ion implantation system and method of use using non-tungsten materials
KR102220239B1 (en) 2019-05-13 2021-02-25 주식회사 에프알디 Boron trifluoride yielding apparatus
KR102330961B1 (en) 2019-11-29 2021-11-25 주식회사 에프알디 High purity boron trifluoride manufacturing apparatus

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Publication number Priority date Publication date Assignee Title
US6343476B1 (en) 1998-04-28 2002-02-05 Advanced Technology Materials, Inc. Gas storage and dispensing system comprising regulator interiorly disposed in fluid containment vessel and adjustable in situ therein
US6101816A (en) 1998-04-28 2000-08-15 Advanced Technology Materials, Inc. Fluid storage and dispensing system
CA2460928A1 (en) 2001-09-18 2003-03-27 Eidgenossische Technische Hochschule Zurich Methods and apparatus for coating surfaces
US7033879B2 (en) 2004-04-29 2006-04-25 Texas Instruments Incorporated Semiconductor device having optimized shallow junction geometries and method for fabrication thereof
SG165321A1 (en) * 2005-08-30 2010-10-28 Advanced Tech Materials Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
GB0901857D0 (en) 2009-02-05 2009-03-11 Nanoco Technologies Ltd Encapsulated nanoparticles
US8062965B2 (en) * 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8598022B2 (en) * 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8138071B2 (en) * 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
TWI689467B (en) * 2010-02-26 2020-04-01 美商恩特葛瑞斯股份有限公司 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
US9984855B2 (en) * 2010-11-17 2018-05-29 Axcelis Technologies, Inc. Implementation of co-gases for germanium and boron ion implants
TWI592461B (en) 2011-09-23 2017-07-21 納諾柯技術有限公司 Semiconductor nanoparticle-based light emitting materials
US20130243874A1 (en) 2012-03-06 2013-09-19 Imra Of America, Inc. Nanoparticles coated with amphiphilic block copolymers
CN105392870B (en) * 2013-05-17 2019-01-08 恩特格里斯公司 High pressure BF3/H2The preparation of mixture
US9524849B2 (en) * 2013-07-18 2016-12-20 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in an implant system
US9570271B2 (en) * 2014-03-03 2017-02-14 Praxair Technology, Inc. Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

Also Published As

Publication number Publication date
US20190136069A1 (en) 2019-05-09
EP3436404A1 (en) 2019-02-06
SG10201910772PA (en) 2020-01-30
EP3436404B1 (en) 2020-08-26
CN109195910A (en) 2019-01-11
KR102194518B1 (en) 2020-12-23
CN109195910B (en) 2022-05-24
KR20180134932A (en) 2018-12-19
TWI636013B (en) 2018-09-21
US10920087B2 (en) 2021-02-16
WO2017172618A1 (en) 2017-10-05
TW201805240A (en) 2018-02-16

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