SG11201801027SA - Apparatus and manufacturing method - Google Patents
Apparatus and manufacturing methodInfo
- Publication number
- SG11201801027SA SG11201801027SA SG11201801027SA SG11201801027SA SG11201801027SA SG 11201801027S A SG11201801027S A SG 11201801027SA SG 11201801027S A SG11201801027S A SG 11201801027SA SG 11201801027S A SG11201801027S A SG 11201801027SA SG 11201801027S A SG11201801027S A SG 11201801027SA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510535388.XA CN105355610B (en) | 2015-08-27 | 2015-08-27 | A kind of circuit device and manufacturing method |
PCT/CN2016/096373 WO2017032301A1 (en) | 2015-08-27 | 2016-08-23 | Apparatus and manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201801027SA true SG11201801027SA (en) | 2018-03-28 |
Family
ID=55331549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201801027SA SG11201801027SA (en) | 2015-08-27 | 2016-08-23 | Apparatus and manufacturing method |
Country Status (6)
Country | Link |
---|---|
US (1) | US10784181B2 (en) |
EP (1) | EP3327769B1 (en) |
CN (1) | CN105355610B (en) |
SG (1) | SG11201801027SA (en) |
TW (1) | TWI644367B (en) |
WO (1) | WO2017032301A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105355610B (en) | 2015-08-27 | 2019-01-18 | 华为技术有限公司 | A kind of circuit device and manufacturing method |
CN106356341A (en) * | 2016-08-31 | 2017-01-25 | 华为技术有限公司 | Semiconductor device and manufacture method |
WO2020103137A1 (en) * | 2018-11-23 | 2020-05-28 | 北京比特大陆科技有限公司 | Chip heat dissipation structure, chip structure, circuit board and supercomputing device |
WO2020103145A1 (en) * | 2018-11-23 | 2020-05-28 | 北京比特大陆科技有限公司 | Chip heat radiating structure, chip structure, circuit board, and supercomputing device |
JP6950848B2 (en) * | 2019-03-20 | 2021-10-13 | 住友ベークライト株式会社 | Thermally conductive composition used for semiconductor packages |
WO2021119930A1 (en) * | 2019-12-16 | 2021-06-24 | 华为技术有限公司 | Chip package and fabrication method therefor |
WO2024089817A1 (en) * | 2022-10-26 | 2024-05-02 | 三菱電機株式会社 | Semiconductor device and manufacturing method therefor |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050049350A1 (en) | 2003-08-25 | 2005-03-03 | Sandeep Tonapi | Thin bond-line silicone adhesive composition and method for preparing the same |
US7550097B2 (en) | 2003-09-03 | 2009-06-23 | Momentive Performance Materials, Inc. | Thermal conductive material utilizing electrically conductive nanoparticles |
JP2006202938A (en) | 2005-01-20 | 2006-08-03 | Kojiro Kobayashi | Semiconductor device and its manufacturing method |
US7183641B2 (en) | 2005-03-30 | 2007-02-27 | Intel Corporation | Integrated heat spreader with intermetallic layer and method for making |
CN1978582A (en) * | 2005-12-09 | 2007-06-13 | 富准精密工业(深圳)有限公司 | Heat-conductive cream and electronic device using same |
US7535099B2 (en) * | 2006-09-26 | 2009-05-19 | Intel Corporation | Sintered metallic thermal interface materials for microelectronic cooling assemblies |
JP2008153470A (en) * | 2006-12-18 | 2008-07-03 | Renesas Technology Corp | Semiconductor apparatus and manufacturing method of semiconductor apparatus |
US7709951B2 (en) | 2007-03-16 | 2010-05-04 | International Business Machines Corporation | Thermal pillow |
US8030757B2 (en) | 2007-06-29 | 2011-10-04 | Intel Corporation | Forming a semiconductor package including a thermal interface material |
JP5123633B2 (en) * | 2007-10-10 | 2013-01-23 | ルネサスエレクトロニクス株式会社 | Semiconductor devices and connecting materials |
US7875972B2 (en) | 2009-06-25 | 2011-01-25 | International Business Machines Corporation | Semiconductor device assembly having a stress-relieving buffer layer |
US8248803B2 (en) | 2010-03-31 | 2012-08-21 | Hong Kong Applied Science and Technology Research Institute Company Limited | Semiconductor package and method of manufacturing the same |
US9010616B2 (en) * | 2011-05-31 | 2015-04-21 | Indium Corporation | Low void solder joint for multiple reflow applications |
US8716864B2 (en) * | 2012-06-07 | 2014-05-06 | Ixys Corporation | Solderless die attach to a direct bonded aluminum substrate |
CN102867793A (en) * | 2012-08-14 | 2013-01-09 | 日月光半导体制造股份有限公司 | Thermal interface material and semiconductor packaging structure |
US9093563B2 (en) * | 2013-07-11 | 2015-07-28 | International Business Machines Corporation | Electronic module assembly with patterned adhesive array |
JP6214273B2 (en) * | 2013-08-08 | 2017-10-18 | 三菱電機株式会社 | Bonding structure using metal nanoparticles and bonding method using metal nanoparticles |
CN104538321B (en) * | 2014-12-10 | 2018-10-26 | 株洲南车时代电气股份有限公司 | The method and application of silicon chip and molybdenum sheet welding in a kind of semiconductor devices |
CN105355610B (en) * | 2015-08-27 | 2019-01-18 | 华为技术有限公司 | A kind of circuit device and manufacturing method |
-
2015
- 2015-08-27 CN CN201510535388.XA patent/CN105355610B/en active Active
-
2016
- 2016-08-23 EP EP16838559.9A patent/EP3327769B1/en active Active
- 2016-08-23 WO PCT/CN2016/096373 patent/WO2017032301A1/en active Application Filing
- 2016-08-23 SG SG11201801027SA patent/SG11201801027SA/en unknown
- 2016-08-24 TW TW105127108A patent/TWI644367B/en active
-
2018
- 2018-02-26 US US15/905,044 patent/US10784181B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2017032301A1 (en) | 2017-03-02 |
TWI644367B (en) | 2018-12-11 |
EP3327769A1 (en) | 2018-05-30 |
US10784181B2 (en) | 2020-09-22 |
US20180190566A1 (en) | 2018-07-05 |
CN105355610B (en) | 2019-01-18 |
EP3327769A4 (en) | 2018-08-08 |
TW201709352A (en) | 2017-03-01 |
EP3327769B1 (en) | 2021-02-03 |
CN105355610A (en) | 2016-02-24 |
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