SG11201801027SA - Apparatus and manufacturing method - Google Patents

Apparatus and manufacturing method

Info

Publication number
SG11201801027SA
SG11201801027SA SG11201801027SA SG11201801027SA SG11201801027SA SG 11201801027S A SG11201801027S A SG 11201801027SA SG 11201801027S A SG11201801027S A SG 11201801027SA SG 11201801027S A SG11201801027S A SG 11201801027SA SG 11201801027S A SG11201801027S A SG 11201801027SA
Authority
SG
Singapore
Prior art keywords
manufacturing
Prior art date
Application number
SG11201801027SA
Inventor
Huili Fu
Jyh Rong Lin
Shujie Cai
Original Assignee
Huawei Tech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Tech Co Ltd filed Critical Huawei Tech Co Ltd
Publication of SG11201801027SA publication Critical patent/SG11201801027SA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4871Bases, plates or heatsinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3672Foil-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736Metallic materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4871Bases, plates or heatsinks
    • H01L21/4882Assembly of heatsink parts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8384Sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Powder Metallurgy (AREA)
SG11201801027SA 2015-08-27 2016-08-23 Apparatus and manufacturing method SG11201801027SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510535388.XA CN105355610B (en) 2015-08-27 2015-08-27 A kind of circuit device and manufacturing method
PCT/CN2016/096373 WO2017032301A1 (en) 2015-08-27 2016-08-23 Apparatus and manufacturing method

Publications (1)

Publication Number Publication Date
SG11201801027SA true SG11201801027SA (en) 2018-03-28

Family

ID=55331549

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201801027SA SG11201801027SA (en) 2015-08-27 2016-08-23 Apparatus and manufacturing method

Country Status (6)

Country Link
US (1) US10784181B2 (en)
EP (1) EP3327769B1 (en)
CN (1) CN105355610B (en)
SG (1) SG11201801027SA (en)
TW (1) TWI644367B (en)
WO (1) WO2017032301A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105355610B (en) 2015-08-27 2019-01-18 华为技术有限公司 A kind of circuit device and manufacturing method
CN106356341A (en) * 2016-08-31 2017-01-25 华为技术有限公司 Semiconductor device and manufacture method
WO2020103137A1 (en) * 2018-11-23 2020-05-28 北京比特大陆科技有限公司 Chip heat dissipation structure, chip structure, circuit board and supercomputing device
WO2020103145A1 (en) * 2018-11-23 2020-05-28 北京比特大陆科技有限公司 Chip heat radiating structure, chip structure, circuit board, and supercomputing device
JP6950848B2 (en) * 2019-03-20 2021-10-13 住友ベークライト株式会社 Thermally conductive composition used for semiconductor packages
WO2021119930A1 (en) * 2019-12-16 2021-06-24 华为技术有限公司 Chip package and fabrication method therefor
WO2024089817A1 (en) * 2022-10-26 2024-05-02 三菱電機株式会社 Semiconductor device and manufacturing method therefor

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050049350A1 (en) 2003-08-25 2005-03-03 Sandeep Tonapi Thin bond-line silicone adhesive composition and method for preparing the same
US7550097B2 (en) 2003-09-03 2009-06-23 Momentive Performance Materials, Inc. Thermal conductive material utilizing electrically conductive nanoparticles
JP2006202938A (en) 2005-01-20 2006-08-03 Kojiro Kobayashi Semiconductor device and its manufacturing method
US7183641B2 (en) 2005-03-30 2007-02-27 Intel Corporation Integrated heat spreader with intermetallic layer and method for making
CN1978582A (en) * 2005-12-09 2007-06-13 富准精密工业(深圳)有限公司 Heat-conductive cream and electronic device using same
US7535099B2 (en) * 2006-09-26 2009-05-19 Intel Corporation Sintered metallic thermal interface materials for microelectronic cooling assemblies
JP2008153470A (en) * 2006-12-18 2008-07-03 Renesas Technology Corp Semiconductor apparatus and manufacturing method of semiconductor apparatus
US7709951B2 (en) 2007-03-16 2010-05-04 International Business Machines Corporation Thermal pillow
US8030757B2 (en) 2007-06-29 2011-10-04 Intel Corporation Forming a semiconductor package including a thermal interface material
JP5123633B2 (en) * 2007-10-10 2013-01-23 ルネサスエレクトロニクス株式会社 Semiconductor devices and connecting materials
US7875972B2 (en) 2009-06-25 2011-01-25 International Business Machines Corporation Semiconductor device assembly having a stress-relieving buffer layer
US8248803B2 (en) 2010-03-31 2012-08-21 Hong Kong Applied Science and Technology Research Institute Company Limited Semiconductor package and method of manufacturing the same
US9010616B2 (en) * 2011-05-31 2015-04-21 Indium Corporation Low void solder joint for multiple reflow applications
US8716864B2 (en) * 2012-06-07 2014-05-06 Ixys Corporation Solderless die attach to a direct bonded aluminum substrate
CN102867793A (en) * 2012-08-14 2013-01-09 日月光半导体制造股份有限公司 Thermal interface material and semiconductor packaging structure
US9093563B2 (en) * 2013-07-11 2015-07-28 International Business Machines Corporation Electronic module assembly with patterned adhesive array
JP6214273B2 (en) * 2013-08-08 2017-10-18 三菱電機株式会社 Bonding structure using metal nanoparticles and bonding method using metal nanoparticles
CN104538321B (en) * 2014-12-10 2018-10-26 株洲南车时代电气股份有限公司 The method and application of silicon chip and molybdenum sheet welding in a kind of semiconductor devices
CN105355610B (en) * 2015-08-27 2019-01-18 华为技术有限公司 A kind of circuit device and manufacturing method

Also Published As

Publication number Publication date
WO2017032301A1 (en) 2017-03-02
TWI644367B (en) 2018-12-11
EP3327769A1 (en) 2018-05-30
US10784181B2 (en) 2020-09-22
US20180190566A1 (en) 2018-07-05
CN105355610B (en) 2019-01-18
EP3327769A4 (en) 2018-08-08
TW201709352A (en) 2017-03-01
EP3327769B1 (en) 2021-02-03
CN105355610A (en) 2016-02-24

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