SG11201702573VA - Non-destructive acoustic metrology for void detection - Google Patents
Non-destructive acoustic metrology for void detectionInfo
- Publication number
- SG11201702573VA SG11201702573VA SG11201702573VA SG11201702573VA SG11201702573VA SG 11201702573V A SG11201702573V A SG 11201702573VA SG 11201702573V A SG11201702573V A SG 11201702573VA SG 11201702573V A SG11201702573V A SG 11201702573VA SG 11201702573V A SG11201702573V A SG 11201702573VA
- Authority
- SG
- Singapore
- Prior art keywords
- void detection
- destructive acoustic
- acoustic metrology
- metrology
- destructive
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
- G01N29/2418—Probes using optoacoustic interaction with the material, e.g. laser radiation, photoacoustics
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/44—Processing the detected response signal, e.g. electronic circuits specially adapted therefor
- G01N29/46—Processing the detected response signal, e.g. electronic circuits specially adapted therefor by spectral analysis, e.g. Fourier analysis or wavelet analysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/028—Material parameters
- G01N2291/0289—Internal structure, e.g. defects, grain size, texture
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
- G01N29/06—Visualisation of the interior, e.g. acoustic microscopy
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
- G01N29/06—Visualisation of the interior, e.g. acoustic microscopy
- G01N29/0654—Imaging
- G01N29/0681—Imaging by acoustic microscopy, e.g. scanning acoustic microscopy
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
- G01N29/06—Visualisation of the interior, e.g. acoustic microscopy
- G01N29/0654—Imaging
- G01N29/069—Defect imaging, localisation and sizing using, e.g. time of flight diffraction [TOFD], synthetic aperture focusing technique [SAFT], Amplituden-Laufzeit-Ortskurven [ALOK] technique
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
- G01N29/07—Analysing solids by measuring propagation velocity or propagation time of acoustic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462056773P | 2014-09-29 | 2014-09-29 | |
| PCT/US2015/052984 WO2016054067A1 (en) | 2014-09-29 | 2015-09-29 | Non-destructive acoustic metrology for void detection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201702573VA true SG11201702573VA (en) | 2017-04-27 |
Family
ID=55631374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201702573VA SG11201702573VA (en) | 2014-09-29 | 2015-09-29 | Non-destructive acoustic metrology for void detection |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9991176B2 (en) |
| SG (1) | SG11201702573VA (en) |
| TW (1) | TWI678745B (en) |
| WO (1) | WO2016054067A1 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10551357B2 (en) | 2016-09-28 | 2020-02-04 | The Regents Of The University Of Colorado, A Body Corporate | High resolution photoacoustic imaging in scattering media using structured illumination |
| EP3349020A1 (en) * | 2017-01-13 | 2018-07-18 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Method of and system for performing subsurface imaging using vibration sensing |
| US10515862B2 (en) * | 2017-04-05 | 2019-12-24 | Applied Materials, Inc. | Wafer based corrosion and time dependent chemical effects |
| CZ2018397A3 (en) * | 2018-08-07 | 2020-02-12 | Alexander KRAVCOV | Non-destructive method of inspecting materials and the equipment for it |
| US11486834B2 (en) | 2018-12-27 | 2022-11-01 | Samsung Electronics Co., Ltd. | Substrate inspection method and method of fabricating a semiconductor device using the same |
| KR20230002696A (en) * | 2020-04-13 | 2023-01-05 | 온투 이노베이션 아이엔씨. | Characterization of Patterned Structures Using Acoustic Metrology |
| EP4143552A4 (en) | 2020-04-29 | 2024-05-08 | Thermal Wave Imaging Inc | Thermographic non-destructive testing using temperature-limited modulation |
| US11187679B1 (en) * | 2020-05-20 | 2021-11-30 | The Boeing Company | Beam steering for laser ultrasonic inspection systems |
| US11668644B2 (en) | 2021-03-30 | 2023-06-06 | Onto Innovation Inc. | Opto-acoustic measurement of a transparent film stack |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2373329B (en) * | 2000-05-05 | 2003-03-05 | Acoustical Tech Sg Pte Ltd | Acoustic microscope |
| US6906523B2 (en) | 2000-09-14 | 2005-06-14 | Midtronics, Inc. | Method and apparatus for testing cells and batteries embedded in series/parallel systems |
| US6833554B2 (en) * | 2000-11-21 | 2004-12-21 | Massachusetts Institute Of Technology | Laser-induced defect detection system and method |
| US6809808B2 (en) * | 2002-03-22 | 2004-10-26 | Applied Materials, Inc. | Wafer defect detection system with traveling lens multi-beam scanner |
| US7397596B2 (en) | 2004-07-28 | 2008-07-08 | Ler Technologies, Inc. | Surface and subsurface detection sensor |
| US7327448B2 (en) | 2004-07-29 | 2008-02-05 | Optech Ventures Llc | Laser-ultrasonic detection of flip chip attachment defects |
| US8676538B2 (en) | 2004-11-02 | 2014-03-18 | Advanced Micro Devices, Inc. | Adjusting weighting of a parameter relating to fault detection based on a detected fault |
| US20060256916A1 (en) * | 2005-05-13 | 2006-11-16 | Rudolph Technologies, Inc. | Combined ultra-fast x-ray and optical system for thin film measurements |
| CA2552623A1 (en) * | 2006-07-20 | 2008-01-20 | Ibm Canada Limited - Ibm Canada Limitee | A method for measuring thin layers in solid state devices |
| KR101184489B1 (en) * | 2009-11-16 | 2012-09-19 | 삼성전기주식회사 | Inspection method for circuit pattern of substrate |
| JP5710385B2 (en) * | 2011-06-02 | 2015-04-30 | インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ | Presence of voids in through silicon vias (TSV) based on ultrasonic scanning |
| US9576862B2 (en) * | 2013-03-15 | 2017-02-21 | Rudolph Technologies, Inc. | Optical acoustic substrate assessment system and method |
-
2015
- 2015-09-29 US US15/515,126 patent/US9991176B2/en active Active
- 2015-09-29 WO PCT/US2015/052984 patent/WO2016054067A1/en active Application Filing
- 2015-09-29 SG SG11201702573VA patent/SG11201702573VA/en unknown
- 2015-09-30 TW TW104132117A patent/TWI678745B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| US20170221778A1 (en) | 2017-08-03 |
| TWI678745B (en) | 2019-12-01 |
| US9991176B2 (en) | 2018-06-05 |
| WO2016054067A1 (en) | 2016-04-07 |
| TW201618208A (en) | 2016-05-16 |
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