SG11201606928VA - Sputtering system and method using counterweight - Google Patents

Sputtering system and method using counterweight

Info

Publication number
SG11201606928VA
SG11201606928VA SG11201606928VA SG11201606928VA SG11201606928VA SG 11201606928V A SG11201606928V A SG 11201606928VA SG 11201606928V A SG11201606928V A SG 11201606928VA SG 11201606928V A SG11201606928V A SG 11201606928VA SG 11201606928V A SG11201606928V A SG 11201606928VA
Authority
SG
Singapore
Prior art keywords
counterweight
sputtering system
sputtering
Prior art date
Application number
SG11201606928VA
Inventor
Vinay Shah
Alexandru Riposan
Terry Bluck
Original Assignee
Intevac Inc
Vinay Shah
Alexandru Riposan
Terry Bluck
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/185,867 external-priority patent/US20140332376A1/en
Application filed by Intevac Inc, Vinay Shah, Alexandru Riposan, Terry Bluck filed Critical Intevac Inc
Publication of SG11201606928VA publication Critical patent/SG11201606928VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/32779—Continuous moving of batches of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG11201606928VA 2014-02-20 2015-02-19 Sputtering system and method using counterweight SG11201606928VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/185,867 US20140332376A1 (en) 2011-11-04 2014-02-20 Sputtering system and method using counterweight
PCT/US2015/016611 WO2015127074A1 (en) 2014-02-20 2015-02-19 Sputtering system and method using counterweight

Publications (1)

Publication Number Publication Date
SG11201606928VA true SG11201606928VA (en) 2016-09-29

Family

ID=53878959

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606928VA SG11201606928VA (en) 2014-02-20 2015-02-19 Sputtering system and method using counterweight

Country Status (8)

Country Link
EP (1) EP3108028B1 (en)
JP (1) JP6450402B2 (en)
KR (1) KR102327285B1 (en)
CN (1) CN107087418B (en)
MY (1) MY192713A (en)
SG (1) SG11201606928VA (en)
TW (1) TW201546308A (en)
WO (1) WO2015127074A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10106883B2 (en) 2011-11-04 2018-10-23 Intevac, Inc. Sputtering system and method using direction-dependent scan speed or power

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59103757U (en) * 1982-12-27 1984-07-12 株式会社徳田製作所 sputtering equipment
JPS6134177A (en) * 1984-07-25 1986-02-18 Tokuda Seisakusho Ltd Magnet driving device
JP3514488B2 (en) * 1993-06-30 2004-03-31 株式会社アルバック Magnetron sputtering method and apparatus
US6464841B1 (en) * 1997-03-04 2002-10-15 Tokyo Electron Limited Cathode having variable magnet configuration
US6485616B1 (en) * 1999-12-29 2002-11-26 Deposition Sciences, Inc. System and method for coating substrates with improved capacity and uniformity
DE10196963T1 (en) * 2000-12-05 2003-11-20 Trikon Holdings Ltd Magnetron sputtering
EP1486824A1 (en) * 2003-06-11 2004-12-15 ASML Netherlands B.V. A movable stage system for in a lithographic projection apparatus, lithographic projection apparatus and device manufacturing method
JP4384109B2 (en) * 2005-01-05 2009-12-16 三星モバイルディスプレイ株式會社 Drive shaft of vapor deposition source for vapor deposition system and vapor deposition system having the same
JP4657183B2 (en) * 2006-09-28 2011-03-23 株式会社アルバック Sputtering apparatus and sputtering method
EP1923902B2 (en) * 2006-11-14 2014-07-23 Applied Materials, Inc. Magnetron sputtering source, sputter coating system and method for coating a substrate
US20100294649A1 (en) * 2008-01-21 2010-11-25 Ulvac, Inc. Sputtering film forming method and sputtering film forming apparatus
CN101570274B (en) * 2008-04-30 2011-04-13 中国恩菲工程技术有限公司 Belt conveyor
CN101988189B (en) * 2009-08-07 2012-10-10 鸿富锦精密工业（深圳）有限公司 Magnetron sputtering target and magnetron sputtering device adopting same
TWI589717B (en) * 2011-11-03 2017-07-01 海帝斯科技公司 Sputerring method using of sputerring device
JP2014532813A (en) * 2011-11-04 2014-12-08 インテヴァック インコーポレイテッド Line scanning sputtering system and line scanning sputtering method
US20140332376A1 (en) * 2011-11-04 2014-11-13 Intevac, Inc. Sputtering system and method using counterweight
US9093252B2 (en) * 2012-02-16 2015-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Rotation plus vibration magnet for magnetron sputtering apparatus

Also Published As

Publication number Publication date
CN107087418A (en) 2017-08-22
EP3108028A4 (en) 2017-08-23
JP6450402B2 (en) 2019-01-09
TW201546308A (en) 2015-12-16
EP3108028A1 (en) 2016-12-28
JP2017510714A (en) 2017-04-13
WO2015127074A1 (en) 2015-08-27
MY192713A (en) 2022-09-05
CN107087418B (en) 2020-09-29
KR102327285B1 (en) 2021-11-16
KR20160142287A (en) 2016-12-12
EP3108028B1 (en) 2020-04-08

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