SG11201406137VA - Rotating disk reactor with ferrofluid seal for chemical vapor deposition - Google Patents
Rotating disk reactor with ferrofluid seal for chemical vapor depositionInfo
- Publication number
- SG11201406137VA SG11201406137VA SG11201406137VA SG11201406137VA SG11201406137VA SG 11201406137V A SG11201406137V A SG 11201406137VA SG 11201406137V A SG11201406137V A SG 11201406137VA SG 11201406137V A SG11201406137V A SG 11201406137VA SG 11201406137V A SG11201406137V A SG 11201406137VA
- Authority
- SG
- Singapore
- Prior art keywords
- vapor deposition
- rotating disk
- chemical vapor
- ferrofluid seal
- disk reactor
- Prior art date
Links
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 239000011554 ferrofluid Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261648640P | 2012-05-18 | 2012-05-18 | |
US201261648646P | 2012-05-18 | 2012-05-18 | |
US201361781858P | 2013-03-14 | 2013-03-14 | |
PCT/US2013/040246 WO2013173152A1 (en) | 2012-05-18 | 2013-05-09 | Rotating disk reactor with ferrofluid seal for chemical vapor deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201406137VA true SG11201406137VA (en) | 2014-11-27 |
Family
ID=49584171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201406137VA SG11201406137VA (en) | 2012-05-18 | 2013-05-09 | Rotating disk reactor with ferrofluid seal for chemical vapor deposition |
Country Status (8)
Country | Link |
---|---|
US (2) | US20150075431A1 (en) |
EP (1) | EP2850221B1 (en) |
JP (2) | JP6184479B2 (en) |
KR (2) | KR101710770B1 (en) |
CN (2) | CN104302807B (en) |
SG (1) | SG11201406137VA (en) |
TW (2) | TWI537413B (en) |
WO (1) | WO2013173152A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10718052B2 (en) | 2012-05-18 | 2020-07-21 | Veeco Instruments, Inc. | Rotating disk reactor with ferrofluid seal for chemical vapor deposition |
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US20160042961A1 (en) * | 2014-08-06 | 2016-02-11 | Applied Materials, Inc. | Electron beam plasma source with rotating cathode, backside helium cooling and liquid cooled pedestal for uniform plasma generation |
KR20180000721A (en) | 2015-05-21 | 2018-01-03 | 플라즈마빌리티, 엘엘씨 | A toroidal plasma processing apparatus having a shaped workpiece support |
US9748113B2 (en) | 2015-07-30 | 2017-08-29 | Veeco Intruments Inc. | Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system |
DE202016104588U1 (en) | 2015-09-03 | 2016-11-30 | Veeco Instruments Inc. | Multi-chamber system for chemical vapor deposition |
USD819580S1 (en) * | 2016-04-01 | 2018-06-05 | Veeco Instruments, Inc. | Self-centering wafer carrier for chemical vapor deposition |
US9806183B2 (en) | 2015-11-30 | 2017-10-31 | Veeco Instruments, Inc. | Stress control on thin silicon substrates |
DE102017203255A1 (en) | 2016-03-02 | 2017-09-07 | Veeco Instruments Inc. | PERIPHERAL WASTE AND FLUID CONTROL SYSTEMS AND METHOD |
USD803283S1 (en) | 2016-05-16 | 2017-11-21 | Veeco Instruments Inc. | Wafer handling assembly |
US9892956B1 (en) | 2016-10-12 | 2018-02-13 | Lam Research Corporation | Wafer positioning pedestal for semiconductor processing |
WO2018071598A1 (en) * | 2016-10-12 | 2018-04-19 | Lam Research Corporation | Pad raising mechanism in wafer positioning pedestal for semiconductor processing |
US10573549B2 (en) | 2016-12-01 | 2020-02-25 | Lam Research Corporation | Pad raising mechanism in wafer positioning pedestal for semiconductor processing |
US10512862B2 (en) | 2017-09-26 | 2019-12-24 | Veeco Instruments Inc. | Filter element for wafer processing assembly |
US10704693B2 (en) * | 2018-03-30 | 2020-07-07 | Varian Semiconductor Equipment Associates, Inc. | Cryogenic ferrofluid sealed rotary union |
DE102018113400A1 (en) * | 2018-06-06 | 2019-12-12 | Aixtron Se | CVD reactor with support ring for substrate handling |
US11427912B2 (en) | 2018-06-25 | 2022-08-30 | Applied Materials, Inc. | High temperature rotation module for a processing chamber |
JP7224139B2 (en) * | 2018-10-25 | 2023-02-17 | 東京エレクトロン株式会社 | Stage equipment and processing equipment |
CN113838793A (en) * | 2020-06-24 | 2021-12-24 | 拓荆科技股份有限公司 | Device and equipment for automatically rotating wafer |
TWI735287B (en) * | 2020-07-13 | 2021-08-01 | 勤友光電股份有限公司 | Transmission device |
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-
2013
- 2013-05-09 WO PCT/US2013/040246 patent/WO2013173152A1/en active Application Filing
- 2013-05-09 JP JP2015512693A patent/JP6184479B2/en active Active
- 2013-05-09 KR KR1020147031643A patent/KR101710770B1/en active IP Right Grant
- 2013-05-09 CN CN201380025887.3A patent/CN104302807B/en active Active
- 2013-05-09 KR KR1020167003464A patent/KR101891007B1/en active IP Right Grant
- 2013-05-09 EP EP13791326.5A patent/EP2850221B1/en active Active
- 2013-05-09 CN CN201610120769.6A patent/CN105734532B/en active Active
- 2013-05-09 SG SG11201406137VA patent/SG11201406137VA/en unknown
- 2013-05-09 US US14/390,345 patent/US20150075431A1/en not_active Abandoned
- 2013-05-14 TW TW102117105A patent/TWI537413B/en active
- 2013-05-14 TW TW105105158A patent/TWI585229B/en active
-
2016
- 2016-07-01 JP JP2016131313A patent/JP2016174187A/en not_active Withdrawn
- 2016-12-16 US US15/382,216 patent/US10718052B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10718052B2 (en) | 2012-05-18 | 2020-07-21 | Veeco Instruments, Inc. | Rotating disk reactor with ferrofluid seal for chemical vapor deposition |
Also Published As
Publication number | Publication date |
---|---|
TWI585229B (en) | 2017-06-01 |
WO2013173152A1 (en) | 2013-11-21 |
TW201350603A (en) | 2013-12-16 |
KR101891007B1 (en) | 2018-08-22 |
CN105734532B (en) | 2019-04-30 |
EP2850221A1 (en) | 2015-03-25 |
CN104302807B (en) | 2017-04-05 |
EP2850221A4 (en) | 2016-04-20 |
CN105734532A (en) | 2016-07-06 |
KR20150012252A (en) | 2015-02-03 |
KR20160022937A (en) | 2016-03-02 |
EP2850221B1 (en) | 2022-07-06 |
JP6184479B2 (en) | 2017-08-23 |
US20170096734A1 (en) | 2017-04-06 |
TW201619422A (en) | 2016-06-01 |
US10718052B2 (en) | 2020-07-21 |
JP2015519752A (en) | 2015-07-09 |
US20150075431A1 (en) | 2015-03-19 |
CN104302807A (en) | 2015-01-21 |
JP2016174187A (en) | 2016-09-29 |
KR101710770B1 (en) | 2017-02-27 |
TWI537413B (en) | 2016-06-11 |
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