SG10201914065UA - Fabrication of a device on a carrier substrate - Google Patents

Fabrication of a device on a carrier substrate

Info

Publication number
SG10201914065UA
SG10201914065UA SG10201914065UA SG10201914065UA SG10201914065UA SG 10201914065U A SG10201914065U A SG 10201914065UA SG 10201914065U A SG10201914065U A SG 10201914065UA SG 10201914065U A SG10201914065U A SG 10201914065UA SG 10201914065U A SG10201914065U A SG 10201914065UA
Authority
SG
Singapore
Prior art keywords
fabrication
carrier substrate
carrier
substrate
Prior art date
Application number
SG10201914065UA
Inventor
Kwang Hong Lee
Li Zhang
Soo Jin Chua
Eng Kian Lee
Eugene A Fitzgerald
Chuan Seng Tan
Original Assignee
Massachusetts Inst Technology
Nat Univ Singapore
Univ Nanyang Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Inst Technology, Nat Univ Singapore, Univ Nanyang Tech filed Critical Massachusetts Inst Technology
Publication of SG10201914065UA publication Critical patent/SG10201914065UA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
SG10201914065UA 2016-01-20 2017-01-20 Fabrication of a device on a carrier substrate SG10201914065UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201662280861P 2016-01-20 2016-01-20

Publications (1)

Publication Number Publication Date
SG10201914065UA true SG10201914065UA (en) 2020-03-30

Family

ID=59362815

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201914065UA SG10201914065UA (en) 2016-01-20 2017-01-20 Fabrication of a device on a carrier substrate
SG11201806030SA SG11201806030SA (en) 2016-01-20 2017-01-20 Fabrication of a device on a carrier substrate

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201806030SA SG11201806030SA (en) 2016-01-20 2017-01-20 Fabrication of a device on a carrier substrate

Country Status (8)

Country Link
US (1) US10672608B2 (en)
EP (1) EP3405970A4 (en)
JP (1) JP7201141B2 (en)
KR (1) KR20180114904A (en)
CN (1) CN108780734A (en)
SG (2) SG10201914065UA (en)
TW (1) TWI705480B (en)
WO (1) WO2017127026A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7165858B2 (en) * 2020-06-30 2022-11-07 日亜化学工業株式会社 Method for manufacturing light-emitting element
DE102020121750B3 (en) 2020-08-19 2022-01-27 Otto-von-Guericke-Universität Magdeburg, Körperschaft des öffentlichen Rechts Process for growing a semiconductor device and semiconductor device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3237888B2 (en) * 1992-01-31 2001-12-10 キヤノン株式会社 Semiconductor substrate and method of manufacturing the same
US20030087503A1 (en) * 1994-03-10 2003-05-08 Canon Kabushiki Kaisha Process for production of semiconductor substrate
WO2002082514A1 (en) 2001-04-04 2002-10-17 Massachusetts Institute Of Technology A method for semiconductor device fabrication
FR2842350B1 (en) 2002-07-09 2005-05-13 METHOD FOR TRANSFERRING A LAYER OF CONCEALED SEMICONDUCTOR MATERIAL
US8362503B2 (en) * 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
US8343824B2 (en) 2008-04-29 2013-01-01 International Rectifier Corporation Gallium nitride material processing and related device structures
US8679942B2 (en) * 2008-11-26 2014-03-25 Soitec Strain engineered composite semiconductor substrates and methods of forming same
JP2012513113A (en) 2008-12-19 2012-06-07 ソイテック Strain-treated composite semiconductor substrate and method for forming the same
JP5454283B2 (en) 2010-03-26 2014-03-26 沖電気工業株式会社 Gallium nitride based epitaxial growth substrate, method of manufacturing the same, and field effect transistor manufactured using the substrate
KR20120032329A (en) * 2010-09-28 2012-04-05 삼성전자주식회사 Semiconductor device
GB2485418B (en) * 2010-11-15 2014-10-01 Dandan Zhu Semiconductor materials
US9048091B2 (en) * 2013-03-25 2015-06-02 Infineon Technologies Austria Ag Method and substrate for thick III-N epitaxy
WO2016007088A1 (en) * 2014-07-08 2016-01-14 Massachusetts Institute Of Technology Method of manufacturing a substrate

Also Published As

Publication number Publication date
US20190051516A1 (en) 2019-02-14
TW201737305A (en) 2017-10-16
WO2017127026A1 (en) 2017-07-27
EP3405970A1 (en) 2018-11-28
CN108780734A (en) 2018-11-09
TWI705480B (en) 2020-09-21
EP3405970A4 (en) 2019-09-11
JP7201141B2 (en) 2023-01-10
US10672608B2 (en) 2020-06-02
JP2019507496A (en) 2019-03-14
KR20180114904A (en) 2018-10-19
SG11201806030SA (en) 2018-08-30

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