SG10201702291PA - Plasma Processing Method - Google Patents
Plasma Processing MethodInfo
- Publication number
- SG10201702291PA SG10201702291PA SG10201702291PA SG10201702291PA SG10201702291PA SG 10201702291P A SG10201702291P A SG 10201702291PA SG 10201702291P A SG10201702291P A SG 10201702291PA SG 10201702291P A SG10201702291P A SG 10201702291PA SG 10201702291P A SG10201702291P A SG 10201702291PA
- Authority
- SG
- Singapore
- Prior art keywords
- processing method
- plasma processing
- plasma
- processing
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016056943A JP6378234B2 (en) | 2016-03-22 | 2016-03-22 | Plasma processing method and plasma processing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201702291PA true SG10201702291PA (en) | 2017-10-30 |
Family
ID=59898100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201702291PA SG10201702291PA (en) | 2016-03-22 | 2017-03-21 | Plasma Processing Method |
Country Status (6)
Country | Link |
---|---|
US (1) | US9824864B2 (en) |
JP (1) | JP6378234B2 (en) |
KR (1) | KR102222933B1 (en) |
CN (1) | CN107221494B (en) |
SG (1) | SG10201702291PA (en) |
TW (1) | TWI730062B (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11150283B2 (en) * | 2015-06-29 | 2021-10-19 | Reno Technologies, Inc. | Amplitude and phase detection circuit |
US11521833B2 (en) | 2017-07-10 | 2022-12-06 | Reno Technologies, Inc. | Combined RF generator and RF solid-state matching network |
US11042140B2 (en) | 2018-06-26 | 2021-06-22 | Mks Instruments, Inc. | Adaptive control for a power generator |
US11322336B2 (en) | 2018-10-05 | 2022-05-03 | Semes Co., Ltd. | Apparatus and method for treating substrate |
KR102201890B1 (en) * | 2018-10-05 | 2021-01-13 | 세메스 주식회사 | Apparatus and method for treating substrate |
JP7250663B2 (en) * | 2018-12-19 | 2023-04-03 | 東京エレクトロン株式会社 | Plasma processing apparatus and impedance matching method |
US11387110B2 (en) * | 2019-06-20 | 2022-07-12 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
WO2024070580A1 (en) * | 2022-09-29 | 2024-04-04 | 東京エレクトロン株式会社 | Plasma processing device and power supply system |
WO2024070578A1 (en) * | 2022-09-29 | 2024-04-04 | 東京エレクトロン株式会社 | Plasma processing device and power supply system |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2918892B2 (en) * | 1988-10-14 | 1999-07-12 | 株式会社日立製作所 | Plasma etching method |
JP3277394B2 (en) * | 1992-12-04 | 2002-04-22 | ソニー株式会社 | Method for manufacturing semiconductor device |
US5793162A (en) * | 1995-12-29 | 1998-08-11 | Lam Research Corporation | Apparatus for controlling matching network of a vacuum plasma processor and memory for same |
US5689215A (en) * | 1996-05-23 | 1997-11-18 | Lam Research Corporation | Method of and apparatus for controlling reactive impedances of a matching network connected between an RF source and an RF plasma processor |
CN100462475C (en) * | 2001-08-29 | 2009-02-18 | 东京电子株式会社 | Apparatus and method for plasma processing |
JP4024053B2 (en) * | 2002-02-08 | 2007-12-19 | キヤノンアネルバ株式会社 | High frequency plasma processing method and high frequency plasma processing apparatus |
JP3574651B2 (en) * | 2002-12-05 | 2004-10-06 | 東京エレクトロン株式会社 | Film forming method and film forming apparatus |
US7304438B2 (en) * | 2003-09-22 | 2007-12-04 | Mks Instruments, Inc. | Method and apparatus for preventing instabilities in radio-frequency plasma processing |
US20070066038A1 (en) * | 2004-04-30 | 2007-03-22 | Lam Research Corporation | Fast gas switching plasma processing apparatus |
US7708859B2 (en) * | 2004-04-30 | 2010-05-04 | Lam Research Corporation | Gas distribution system having fast gas switching capabilities |
JP2008118017A (en) * | 2006-11-07 | 2008-05-22 | Hitachi High-Technologies Corp | Method of plasma treatment and treatment apparatus |
JP5608157B2 (en) * | 2008-03-21 | 2014-10-15 | アプライド マテリアルズ インコーポレイテッド | Substrate etching system and process method and apparatus |
JP5222598B2 (en) * | 2008-03-25 | 2013-06-26 | 東京エレクトロン株式会社 | Plasma processing apparatus and power supply rod |
US8018164B2 (en) * | 2008-05-29 | 2011-09-13 | Applied Materials, Inc. | Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources |
US20090308734A1 (en) * | 2008-06-17 | 2009-12-17 | Schneider Automation Inc. | Apparatus and Method for Wafer Level Arc Detection |
US20130048082A1 (en) * | 2011-08-22 | 2013-02-28 | Mirzafer Abatchev | System, method and apparatus for real time control of rapid alternating processes (rap) |
JP5867701B2 (en) * | 2011-12-15 | 2016-02-24 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP5935116B2 (en) * | 2011-12-16 | 2016-06-15 | 東京エレクトロン株式会社 | Plasma processing equipment |
US9171699B2 (en) * | 2012-02-22 | 2015-10-27 | Lam Research Corporation | Impedance-based adjustment of power and frequency |
US9875881B2 (en) * | 2013-02-20 | 2018-01-23 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
JP6320248B2 (en) * | 2014-03-04 | 2018-05-09 | 東京エレクトロン株式会社 | Plasma etching method |
JP6159757B2 (en) * | 2014-07-10 | 2017-07-05 | 東京エレクトロン株式会社 | Plasma processing method for high-precision etching of substrates |
-
2016
- 2016-03-22 JP JP2016056943A patent/JP6378234B2/en active Active
-
2017
- 2017-03-10 TW TW106108072A patent/TWI730062B/en active
- 2017-03-21 SG SG10201702291PA patent/SG10201702291PA/en unknown
- 2017-03-21 KR KR1020170035287A patent/KR102222933B1/en active IP Right Grant
- 2017-03-21 US US15/464,739 patent/US9824864B2/en active Active
- 2017-03-22 CN CN201710174303.9A patent/CN107221494B/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201801571A (en) | 2018-01-01 |
TWI730062B (en) | 2021-06-11 |
CN107221494B (en) | 2020-06-02 |
JP2017174538A (en) | 2017-09-28 |
KR102222933B1 (en) | 2021-03-04 |
US20170278677A1 (en) | 2017-09-28 |
US9824864B2 (en) | 2017-11-21 |
JP6378234B2 (en) | 2018-08-22 |
CN107221494A (en) | 2017-09-29 |
KR20170110039A (en) | 2017-10-10 |
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