SG10201608814YA - Semiconductor device and method for manufacturing the semiconductor device - Google Patents
Semiconductor device and method for manufacturing the semiconductor deviceInfo
- Publication number
- SG10201608814YA SG10201608814YA SG10201608814YA SG10201608814YA SG10201608814YA SG 10201608814Y A SG10201608814Y A SG 10201608814YA SG 10201608814Y A SG10201608814Y A SG 10201608814YA SG 10201608814Y A SG10201608814Y A SG 10201608814YA SG 10201608814Y A SG10201608814Y A SG 10201608814YA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- manufacturing
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Led Devices (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2015213152 | 2015-10-29 |
Publications (1)
Publication Number | Publication Date |
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SG10201608814YA true SG10201608814YA (en) | 2017-05-30 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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SG10201608814YA SG10201608814YA (en) | 2015-10-29 | 2016-10-20 | Semiconductor device and method for manufacturing the semiconductor device |
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2016
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- 2016-10-25 JP JP2016208285A patent/JP2017085099A/en not_active Withdrawn
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- 2016-10-28 KR KR1020160141674A patent/KR20170051322A/en not_active Application Discontinuation
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2018
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TWI685878B (en) | 2020-02-21 |
US10665613B2 (en) | 2020-05-26 |
JP2021132229A (en) | 2021-09-09 |
KR20170051322A (en) | 2017-05-11 |
US20190189643A1 (en) | 2019-06-20 |
JP2017085099A (en) | 2017-05-18 |
US11101293B2 (en) | 2021-08-24 |
US20170125450A1 (en) | 2017-05-04 |
US20210288077A1 (en) | 2021-09-16 |
TWI811521B (en) | 2023-08-11 |
US20180138213A1 (en) | 2018-05-17 |
US11776966B2 (en) | 2023-10-03 |
US20200273889A1 (en) | 2020-08-27 |
TW202038302A (en) | 2020-10-16 |
US9922994B2 (en) | 2018-03-20 |
JP2023065473A (en) | 2023-05-12 |
TW201727700A (en) | 2017-08-01 |
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