SG10201607265WA - Laser assisted device alteration using two-photon absorption - Google Patents

Laser assisted device alteration using two-photon absorption

Info

Publication number
SG10201607265WA
SG10201607265WA SG10201607265WA SG10201607265WA SG10201607265WA SG 10201607265W A SG10201607265W A SG 10201607265WA SG 10201607265W A SG10201607265W A SG 10201607265WA SG 10201607265W A SG10201607265W A SG 10201607265WA SG 10201607265W A SG10201607265W A SG 10201607265WA
Authority
SG
Singapore
Prior art keywords
photon absorption
laser assisted
assisted device
device alteration
alteration
Prior art date
Application number
SG10201607265WA
Inventor
Vedagarbha Praveen
Reid Derryck
Original Assignee
Dcg Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dcg Systems Inc filed Critical Dcg Systems Inc
Publication of SG10201607265WA publication Critical patent/SG10201607265WA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/303—Contactless testing of integrated circuits
SG10201607265WA 2010-09-08 2011-09-08 Laser assisted device alteration using two-photon absorption SG10201607265WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US38102310P 2010-09-08 2010-09-08

Publications (1)

Publication Number Publication Date
SG10201607265WA true SG10201607265WA (en) 2016-10-28

Family

ID=44651256

Family Applications (3)

Application Number Title Priority Date Filing Date
SG10201507213UA SG10201507213UA (en) 2010-09-08 2011-09-08 Laser assisted device alteration using two-photon absorption
SG2011064391A SG179362A1 (en) 2010-09-08 2011-09-08 Laser assisted device alteration using two-photon absorption
SG10201607265WA SG10201607265WA (en) 2010-09-08 2011-09-08 Laser assisted device alteration using two-photon absorption

Family Applications Before (2)

Application Number Title Priority Date Filing Date
SG10201507213UA SG10201507213UA (en) 2010-09-08 2011-09-08 Laser assisted device alteration using two-photon absorption
SG2011064391A SG179362A1 (en) 2010-09-08 2011-09-08 Laser assisted device alteration using two-photon absorption

Country Status (6)

Country Link
US (1) US8860447B2 (en)
EP (1) EP2428807A3 (en)
JP (1) JP5873669B2 (en)
CN (1) CN102401632B (en)
SG (3) SG10201507213UA (en)
TW (1) TWI440869B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10352995B1 (en) 2018-02-28 2019-07-16 Nxp Usa, Inc. System and method of multiplexing laser triggers and optically selecting multiplexed laser pulses for laser assisted device alteration testing of semiconductor device

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EP2428807A3 (en) 2010-09-08 2014-10-29 DCG Systems, Inc. Laser assisted fault localization using two-photon absorption
US9201096B2 (en) 2010-09-08 2015-12-01 Dcg Systems, Inc. Laser-assisted device alteration using synchronized laser pulses
WO2013188046A1 (en) * 2012-05-16 2013-12-19 Dcg Systems, Inc. Laser-assisted device alteration using synchronized laser pulses
US9733297B2 (en) 2013-02-19 2017-08-15 Hamamatsu Photonics K.K. Electric field concentration location observation device and electric field concentration location observation method
SG11201507735RA (en) * 2013-03-24 2015-10-29 Dcg Systems Inc Pulsed lada for acquisition of timing diagrams
TWI619954B (en) * 2014-10-16 2018-04-01 Ｄｃｇ系統公司 Systems and method for laser voltage imaging
JP6820184B2 (en) * 2016-10-26 2021-01-27 浜松ホトニクス株式会社 Semiconductor device inspection method and semiconductor device inspection equipment
JP6927690B2 (en) 2016-11-04 2021-09-01 浜松ホトニクス株式会社 Semiconductor device inspection equipment and semiconductor device inspection method
US10782343B2 (en) 2018-04-17 2020-09-22 Nxp Usa, Inc. Digital tests with radiation induced upsets
CN113162694B (en) * 2021-02-23 2022-12-20 复旦大学 Photon auxiliary vector millimeter wave signal generation system

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US6882170B2 (en) * 2002-12-05 2005-04-19 Intel Corporation Device speed alteration by electron-hole pair injection and device heating
JP4421319B2 (en) * 2004-02-13 2010-02-24 独立行政法人科学技術振興機構 Laser apparatus and laser oscillation method
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US7450245B2 (en) 2005-06-29 2008-11-11 Dcg Systems, Inc. Method and apparatus for measuring high-bandwidth electrical signals using modulation in an optical probing system
US9130344B2 (en) 2006-01-23 2015-09-08 Raydiance, Inc. Automated laser tuning
US8072589B2 (en) * 2007-01-18 2011-12-06 Dcg Systems, Inc. System and method for photoemission-based defect detection
JP2008300486A (en) * 2007-05-30 2008-12-11 Toshiba Corp Testing system, method, and apparatus of semiconductor device
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US20090147255A1 (en) * 2007-12-07 2009-06-11 Erington Kent B Method for testing a semiconductor device and a semiconductor device testing system
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JP2010181288A (en) * 2009-02-05 2010-08-19 Renesas Electronics Corp Analyzer and analysis method of semiconductor integrated circuit
JP2011075441A (en) * 2009-09-30 2011-04-14 Hamamatsu Photonics Kk Semiconductor device failure analysis apparatus
EP2428807A3 (en) 2010-09-08 2014-10-29 DCG Systems, Inc. Laser assisted fault localization using two-photon absorption
US9201096B2 (en) 2010-09-08 2015-12-01 Dcg Systems, Inc. Laser-assisted device alteration using synchronized laser pulses
WO2013188046A1 (en) 2012-05-16 2013-12-19 Dcg Systems, Inc. Laser-assisted device alteration using synchronized laser pulses

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10352995B1 (en) 2018-02-28 2019-07-16 Nxp Usa, Inc. System and method of multiplexing laser triggers and optically selecting multiplexed laser pulses for laser assisted device alteration testing of semiconductor device

Also Published As

Publication number Publication date
JP2012058247A (en) 2012-03-22
SG10201507213UA (en) 2015-10-29
JP5873669B2 (en) 2016-03-01
SG179362A1 (en) 2012-04-27
EP2428807A3 (en) 2014-10-29
TW201211561A (en) 2012-03-16
CN102401632A (en) 2012-04-04
US20120056626A1 (en) 2012-03-08
TWI440869B (en) 2014-06-11
EP2428807A2 (en) 2012-03-14
CN102401632B (en) 2017-03-01
US8860447B2 (en) 2014-10-14

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