RU2799895C1 - Electrically controlled memory element, method for reading and writing its information state - Google Patents

Abstract

FIELD: memory elements.

SUBSTANCE: invention relates to an electrically controlled memory element, in which the memory material is an aluminium film deposited on a means for controlling the energy mode of the memory material, made in the form of a silicon substrate, the contacts for supplying an electrical signal are installed on opposite sides of the memory element, the reader is made in the form of an IR sensor, as well as methods for writing and reading the information state on the memory material of this memory element.

EFFECT: manufacture of a memory element that provides greater durability during cyclic recording and erasing of the information state of the memory element due to thermal data storage; simplification of the method of reading and writing the information state of the memory element.

8 cl, 17 dwg

Description

The field of technology to which the invention belongs.

The present invention relates to the field of computer science and computer technology and, in particular, to a thin film memory cell containing a programmable memory material. Can be used in dynamic storage memory cells.

State of the art

Modern computer technology uses high-density dynamic random access memory, DRAM (Dynamic Random Access Memory), which is used as the main random access memory. DRAM stores data by accumulating charges in a capacitor. However, these charges constantly leak out due to the presence of current leakage. Therefore, the data in DRAM must be regularly rewritten to restore the charges on the capacitor plates, and this operation is called a refresh.

DRAM is made up of multiple banks and each bank is a two-dimensional storage array where the horizontal line is called a row and the vertical line is called a column. The intersection points of rows and columns form memory cells, consisting of a capacitor and a transistor. During the read and update process, the DRAM fetches one row each time and extracts all the data in the row to the read amplifier (which is a row buffer); this process represents the activation operation. Extracting data into the sense amplifier causes charge to flow from the capacitor plates, which erases the data in the cell (this behavior is referred to as a destructive read). The destructive read process involves a subsequent update in order to restore the data on the cell. When a DRAM bank row is updated after being read into the row buffer, the corresponding data is written to the storage array, an operation called precharge. Through the activation operation and the pre-charge operation, the complete renewal process is realized. Upgrading DRAM results in a relatively significant additional cost in a computer system [1]. The disadvantages of this system include destructive reading and additional resource costs during reading, because. DRAM cannot respond to a request to access the storage device during the update process.

Increasing the density of data storage based on modern DRAM random access memory devices is limited by the likelihood of uncontrolled leakage currents, which leads to data loss, so scientists from all over the world are looking for new memory technologies.

In 2008, scientists from the National University of Singapore and Renmin University of China published a report on the possibility of creating a thermal memory as a storage of phonon information [2]. Thermal memory stores data thermally by maintaining temperature. The model presented in the publication showed the possibility of implementing memory on bistable thermal circuits. To create a contour, the use of the Frenkel-Kontorov segment is proposed. A one-dimensional nonlinear lattice is formed, consisting of two such segments and a particle (memory cell) between them. The bistable operation of this cell is based on negative differential thermal resistance. Fixed values of the temperature of the power sources are set and, by controlling the thermal bath, the temperature on the particle is regulated. Due to the change in the heat fluxes of the segments, the particle retains its state for a long time even after the thermal bath is turned off. The reading is made during the measurement of the particle's temperature and contributes to a change in the thermal state of the particle, which leads to data erasure.

In 2014, French and German physicists presented their thermal technology to create a thermal memory [3]. The technology is based on the use of materials with insulator-metal properties, in which a phase transition occurs when the temperature rises.

The principle of phase transition is that dielectrics, which normally have very high resistance, can form low-resistance conductive filaments within themselves upon application of a sufficiently high voltage, and in effect change from a dielectric to a conductor. The physics underlying resistive switching is based on thermally activated physical mechanisms [4].

In the described technology, two plates are used, located at a distance of 2 cm from each other. The material of the first plate is glass, the second is vanadium oxide VO ₂ , which is an insulator-metal transition material. The plates exchange thermal radiation with each other, which makes it possible to maintain the thermal balance. The recording process goes through a special warming radiation. With an increase in the temperature of the vanadium oxide plate to 68°C, a phase transition occurs, leading to an increase in the electrical conductivity of the plate. Measuring the electrical conductivity of the plates makes it possible to carry out the process of reading the information state.

Phonon memory based on the Josephson effect, introduced in 2018 by scientists from Italy and America, uses thermal hysteresis in a superconducting quantum interference device (SQUID) with controlled flow and temperature. This system detects a flow-controlled thermal bistability that can be used to define two distinct thermal logic states. A non-invasive (non-destructive) scheme for reading memory states based on an estimate of the kinetic inductance of systems is proposed.

The above thermal models can be used in the formation of memory circuits. Resistive random-access memory (RRAM) circuits have received the greatest development; these include magnetic random-access memory (MRAM - magnetoresistive random-access memory), implemented on the so-called memristors.

Known element of resistive memory [RU 2714379 C1, publ. February 14, 2020], which contains a substrate, an active layer located on the substrate and two electrically conductive electrodes in contact with the active layer, while the active layer is made as part of a polyvinyl alcohol film with a layer of fluorinated graphene particles adjacent to it. When a short voltage pulse of amplitude, for example, 2.5 V and duration, for example, 100 ns, is applied to the electrically conductive electrodes, the information recording voltage is sufficient for the flow of electric current through the active layer. The active layer transitions from a high-resistance state corresponding to a logical "0" to a low-resistance state corresponding to a logical "1". One or more one-dimensional channels conducting an electric current are formed, similar to a filament through which an electric current begins to flow. Information is being recorded. To erase the recorded information, a voltage of opposite polarity of the same magnitude and duration is applied to the active layer. As a result, the active layer transitions to a high-resistance state. To read information after an opening pulse, for example, 100 ns long, after a time elapsed, for example, 1 μs, a reading pulse with a voltage amplitude of 0.5 V is applied. Also, as a disadvantage, one can point out the relatively expensive material of electrodes made of silver. The disadvantage of functioning is a resource-intensive method of erasing information from a cell (recording a logical "0").

Known ferroelectric memory element [RU 2 668 716 C2, publ. 02.10.2018] with a discrete set of possible states, the number of which is more than two. The memory element contains a ferroelectric layer, conductive layers on both sides of it and means of recording and reading, including an MIS transistor, the ferroelectric layer being made solid or from separate parts, on one side of the ferroelectric layer there is a continuous conductive layer - a common electrode in the form of a floating gate of the MOS transistor, on the other side of the ferroelectric layer a conducting layer is made in the form of two or more non-intersecting parts - recording electrodes, on top of which it is made electrically a continuous conductive layer isolated from them and overlapping the channel area of the MIS transistor is the readout electrode. Applying a sufficient voltage between the semiconductor of the MIS structure and one of the recording electrodes will lead to the polarization of the part of the ferroelectric located under this electrode, i.e. to the polarization of the cell ferroelectric. When a bias is applied to the readout electrode (readout bias), the channel conductivity will depend on the direction of polarization of the ferroelectric under this electrode. The disadvantage of functioning is a resource-intensive method of erasing information from a cell for writing a logical "0" and a limited number of rewriting cycles of a cell from a ferroelectric.

Known cell MRAM using thermal write operation with reduced field current [RU 2599941 C2, publ. October 20, 2016], containing a magnetic tunnel junction formed from a memory layer with a memory magnetization; a reference layer having a reference magnetization, and a tunnel barrier layer located between the reading and storage layers; and a current path electrically connected to said magnetic tunnel junction. The recording method is based on passing a heating current through the magnetic tunnel junction to heat the magnetic tunnel junction; passing the field current to switch the storage magnetization in the written direction according to the polarity of the field current. The main disadvantage of this technology is the STT (spin-torque-transfer) effect, which orients the storage magnetization in a direction different from the direction of the write magnetic field, which generates an undesirable effect on the applied write magnetic field, such as asymmetry of the write magnetic field or even write errors.

As the closest analogue (prototype), a memory element with an energy management mechanism [RU No. 2214009 C2, publ. October 10, 2003], which includes a thin-film programmable chalcogenide semiconductor material. Particular semiconductor alloys used to make memory devices include chalcogenide elements in which "lone pairs" of valence electrons are present, in particular Te alloys of tellurium, more preferably the chalcogen includes a mixture of Te and Se. The proposed chalcogenide memory materials are obtained by high-frequency ion sputtering and sputtering. A layer of memory material is applied with a thickness of approximately 0.02 to 0.5 µm. The memory element also contains a pair of spaced apart electrical contacts for providing an electrical input signal to the memory material. The electrical contacts are a thin-film electrical contact layer of Ti and W. An electrically driven, directly writable memory element contains a volume of memory material having two electrical resistance values. The memory material may be set to one of the electrical resistance values in response to a selected electrical input without having to be set to a specific initial or erased resistance value. The resistance values of the memory material can be detected electrically. The proposed memory elements have practically non-volatile resistance settings. Sometimes the value of the resistance of these memory elements, under some circumstances, goes away from its originally set value, which leads to a deterioration in information storage. When programming the proposed memory devices, electrical energy is supplied in a current pulse. A pulse of electrical energy causes a change in the atomic structure of the chalcogenide memory material. Structural changes in these materials arise as a result of thermal and electronic phenomena. The thermal energy control means includes a heating means for transferring thermal energy to a volume portion of the memory material. Said means is made in the form of one or more heating layers. Heating layers are thin-film structures. One of the heating layers should be applied next to the amount of memory material. Each of the heating layers contains titanium-aluminum nitride. The heating layers can be deposited by methods such as physical vapor deposition, including sputtering, ion plating, as well as DC or RF ion sputter deposition, chemical vapor deposition, and plasma chemical vapor deposition. The exact choice of method depends on many factors, one of which is the deposition temperature limitation imposed by the composition of the target chalcogenide material. The disadvantage of this technology is a relatively complex mechanism for the formation of structure layers, which leads to an increase in the cost of the memory cell. As a disadvantage, one can also note the possibility of an uncontrolled departure of the resistance, leading to data loss, since there is no regeneration and / or error correction process.

The closest analogue (prototype) in terms of the method of reading the information state of an electrically controlled memory element is the method of reading a magnetic RAM cell [EN 2572464, IPC G11C 11/00, publ. 01/10/2016] which includes: measuring the initial resistance value of the magnetic element with stored data, transmitting the first search data to the reading layer and determining the correspondence between the first search data and the stored data, transmitting the second search data to the reading layer and determining the correspondence between the second search data and the stored data, in addition, measuring the initial resistance includes passing the reading current in the magnetic element in the absence of an external magnetic field. Transmitting the first search data includes applying a read magnetic field in a first direction, and transmitting the second search data includes applying a read magnetic field in a second direction so as to orient the read magnetization in the first and second directions, respectively. Determining the correspondence between the first and second search data and the stored data includes measuring the first read resistance and measuring the second read resistance by passing a read current in the magnetic element when the magnetic field is applied in the first and second directions, respectively. Determining the match further includes comparing the measured first and second read resistances with an initial resistance value. The disadvantage of the method in relation to the claimed invention is the need for exposure to an external magnetic field, which can lead to the effect of emerging electromagnetic interference on the sensitive elements of integrated circuits.

The closest analogue (prototype) in terms of the method of recording an information state on an electrically controlled memory element is a method of recording a magnetic random access memory cell [EN 2572464, IPC G11C 11/00, publ. 01/10/2016] comprising heating the magnetic element to a temperature above the first predetermined high temperature threshold, applying the recording magnetic field so as to orient the first storage magnetization and the second storage magnetization in accordance with the recording magnetic field, in addition, the recording magnetic field is applied in the first direction to store the first data or in the second direction to store the second data, further comprising cooling the magnetic element below the second predetermined high temperature threshold, the recording magnetic field is applied in the first direction, and further comprising: cooling the magnetic element to an intermediate temperature below the first predetermined high temperature threshold and above the second predetermined high temperature threshold, applying the recording magnetic field in a second direction opposite to the first direction so as to orient the second storage magnetization in the second direction in accordance with the recording magnetic field for storing the third data, and cooling the magnetic element below the second predetermined high temperature threshold. The disadvantages of the method in relation to the claimed invention is the need for exposure to an external magnetic field, which can lead to the appearance of electromagnetic interference and their influence on the sensitive elements of integrated circuits, the cooling of the magnetic element below the second predetermined high temperature threshold to fix the information state corresponding to the logical "1".

Disclosure of invention

The objective of the claimed invention is to create an electrically controlled memory element on a metallization system with two possible information states, capable of providing thermal storage of data by maintaining the temperature, unlike analogues, and developing a method for recording and reading its information state.

The claimed invention is based on a technical problem, which consists in simplifying the design and manufacturing of a memory element that provides thermal storage of data, with the control of the energy mode of the memory material by means of a silicon substrate, in simplifying the method of reading and writing the information state of the memory element, ensuring greater durability during cyclic recording and erasing.

The technical problem is solved (achieved) by the fact that the electrically controlled memory element contains a memory material with two spaced electrical contacts for supplying an electrical signal to the said memory material, a reader, a means for controlling the energy mode of the memory material, while the memory material is an aluminum film deposited on the means for controlling the energy mode of the memory material, made in the form of a silicon substrate, the contacts for supplying an electrical signal are installed on opposite sides of the memory element, and the reader is made in the form of an IR sensor . In a particular case, in an electrically controlled memory element, the memory material is made using vacuum deposition by the electron-beam method of metal evaporation. Additionally, along the perimeter of the memory material, contacts for registering its electrical state can be installed equidistantly in an amount of 6 to 12 pieces.

Hereinafter, the present invention will be described in more detail with reference to the accompanying figures, where:

Fig.1 - registration of the temperature of the memory material with 6 registration contacts;

Fig.2 - registration of the temperature of the memory material with 8 registration contacts;

Fig.3 - registration of the temperature of the memory material with 10 registration contacts;

Fig.4 - registration of the temperature of the memory material with 12 registration contacts;

Fig.5 - Graphs of the change in temperature of the memory material after heating by 1°C, 2°C or 3°C

Fig. 6 is a graph with a defined second temperature threshold;

Fig. 7 is a graph of observing for 8 minutes the storage of a logical "1" on the memory material;

Fig. 8 graphs of heating and cooling of the memory material: a) heating of the memory material with a temperature change of 1°C; b) heating the memory material with a temperature change of 2°C;

Fig. 9 is a plot of 1°C heating of memory material, plotted by software;

Fig. 10 is a graph of the heating of the memory material using 4 and 5 current pulses;

Fig. 11 is a graph of heating the memory material using 6 to 8 current pulses;

Fig.12 - electrically controlled memory element, made on the system of metallization;

Fig.13 - memory material;

Fig.14 - the system of metallization 2 and the IR sensor 3 form an electrically controlled memory element 1;

Fig.15 is a model of the timing diagram of the operation of an electrically controlled memory element;

Fig.16 is a graphical result of the experiment to evaluate the impulse impact on the memory material;

17 is a test layout of an electrically controlled memory element.

Registration of the electrical state of the memory element makes it possible to register the front of the heat flow resulting from heating and cooling of the memory material, and the more contacts for registering its electrical state, the more accurately it is possible to determine the temperature distribution in the memory material. In FIG. Figure 1 shows a variant of recording the temperature of the memory material with 6 recording contacts and shows the heat flux propagation front, taken when the memory element was heated.

In FIG. Figure 2 shows a variant of recording the temperature of the memory material with 8 recording contacts and shows the heat flux propagation front, taken when the memory element was heated.

In FIG. Figure 3 shows a variant of recording the temperature of the memory material with 10 recording contacts and shows the heat flux propagation front, taken when the memory element was heated.

In FIG. Figure 4 shows a variant of recording the temperature of the memory material with 12 recording contacts and shows the heat flux propagation front, taken when the memory element was heated.

Thus, the physical implementation of the memory element in the proposed size does not allow placing more than 12 electrical state registration contacts.

According to the method of reading the information state from an electrically controlled memory element, the technical result is achieved by measuring the value of the initial indicator with the stored data, determining the correspondence between the first search data and the stored data and determining the correspondence between the second search data and the stored data, while the value of the initial indicator is obtained by measuring the temperature of the memory material with an IR sensor after the cooling rate is reduced, determining the correspondence between the first and second search data and the stored data includes determining the first temperature threshold and the second temperature threshold by calculating the value of the information state log logical "1" and the value of the information state of the logical "0" from the temperature of the memory material, measured after the cooling rate of the memory material is reduced, determining the correspondence further includes comparing the first and second temperature thresholds with the value of the initial temperature of the memory material. In a particular case, the calculation of the value of the information state of logical "1" is equal to the value of the temperature of the memory material, measured after a decrease in the cooling rate, increased by 0.5°C, and the calculation of the value of the information state of logical "0" is equal to the value of the temperature of the memory material, measured after a decrease in the cooling rate, reduced by 0.3°C.

The data accumulated during the study period are reflected in the graphs of temperature changes presented in Fig. 5 and showing that the fast linear cooling of the memory material occurs on average 5 seconds after the structure is heated by 2°C. Therefore, the temperature value of the memory material after the cooling rate is reduced is measured 5 seconds after the memory material is heated.

It was experimentally found that the determination of the second temperature threshold by setting the value of the information state of the logical "0", equal to the temperature of the memory material after a decrease in the cooling rate, leads to the loss of stored data due to the transition of the temperature of the memory material below the level of the second temperature threshold (Fig. 6). Therefore, the information state value of the logical "0" is calculated from the temperature of the memory material measured after the cooling rate is reduced by decreasing it by 0.3°C, and thus the second temperature threshold is determined.

Experimental data confirm the permanent preservation of the information state recorded on the electrically controlled memory element, when using the proposed definition of the second temperature threshold (Fig.7).

A long-term (8 minutes) testing of an electrically controlled memory element showed that in order to determine the first temperature threshold, it is necessary and sufficient to increase the temperature value of the memory material after a decrease in the cooling rate by 0.5°C, thus calculating the value of the information state of the logical "1". (Fig.7) Since the heating of the memory material occurs on average by two degrees, the first temperature threshold will certainly be overcome at the time of writing the information state of the logical "1" to the electrically controlled memory element. But in the mode of maintaining heat on the electrically controlled memory element, false transitions through the first temperature threshold will not occur.

According to the method of writing to an electrically controlled memory element, the technical result is achieved due to the fact that writing an information state to the memory material includes heating the memory material, cooling the memory material to an intermediate temperature threshold, at which the cooling rate of the memory material decreases, and cooling to a second temperature threshold, while heating the memory material is carried out by passing 5 heating current pulses, and for its cooling to an intermediate temperature threshold, the number of heating current pulses is reduced. Cooling down to the second temperature threshold can be done by blocking the heating current.

In the process of studying the operation of an electrically controlled memory element, graphs of the change in the temperature of the memory material during heating and cooling of the memory material were obtained (Fig.8).

The uneven heating of the memory material with a temperature change of 1°C (Fig. 8a) is associated with a discrepancy in the frequency of measurements and a change in the rate of its cooling, i.e. the appearance of the moments of receiving readings from the IR sensor, corresponding to the cooling rate at the temperature that will be obtained the next time the IR sensor is accessed. The graph of the heating of the memory material for a temperature change of 2°C (Fig. 8b) shows a linear change in the temperature of the memory material on the leading edge by reducing the influence of ambient temperature and limiting the dependence on the frequency of access to the IR sensor. Therefore, to eliminate errors in recording the information state, the memory material must be heated by at least 2°C.

Passing through the memory material from 1 to 3 current pulses leads to heating by one degree, which is not enough to eliminate write errors (Fig. 9).

The experiments carried out on recording the information state of an electrically controlled memory element showed that the required heating of the memory material is achieved by passing 4 and 5 current pulses. Write errors are excluded both in the case of 4 current pulses and 5 current pulses (Fig. 10).

Increasing the number of current pulses from 6 to 8 causes the memory material to heat up by three degrees (Fig. 11). The cooling rate during such heating is comparable to the cooling rate when heated by two degrees, but an increase in the heating time will increase the “waiting” period for the thermal cell, when it cannot be accessed.

Implementation of the invention

An electrically controlled memory element is made on a metallization system (Fig. 12). The metallization system is formed according to the technological route, which includes: chemical preparation of the surface of single-crystal silicon (Si) wafers for metallization deposition, and which are used as a means of controlling the energy mode of the memory material, then aluminum (Al) is deposited in the form of a film using vacuum deposition by the electron beam method of metal evaporation and optical photolithography is carried out to obtain a metallization system with a conducting track width of 75 μm and a length of 4 * 10 ³ μm. The thickness of the metallization film is 2÷3 µm. The length of the semiconductor base is 1*10 ⁴ µm, the width is 5*10 ³ µm.

The conductive path extending from contact I to I in FIG. 13 is designed to carry a current pulse in the forward and reverse directions and is a memory material.

The metallization system 2 and the IR sensor 3 form an electrically controlled memory element 1 (Fig. 14).

Electrically controlled memory element works as follows.

To record a logical "1" the memory material is heated by passing 4 or 5 heating current pulses with a duty cycle of 0.02 and an amplitude of 2.5*10 ¹⁰ A/m ² per 2°C.

The regeneration process starts, which maintains the temperature of the memory material in an intermediate temperature range between the first and second temperature thresholds, which allows you to save the recorded information state without errors. The regeneration process includes heating the memory material by passing 2 heating current pulses with a frequency of 0.2 Hz, a duty cycle of 0.02 and an amplitude of 2.5*10 ¹⁰ A/m ² . The regeneration process is controlled automatically to avoid overheating of the memory material with further deformation and failure. The program reduces the frequency and number of heating pulses when the temperature of the memory material is several tenths higher than the value of the first temperature threshold.

The necessary heating using a control device for the functioning of a thin-film memory cell could be carried out in several ways: by changing the amplitude of the current pulse, changing the duration of the pulse or the number of current pulses in a row with a frequency of 0.02 Hz. The use of an amplitude less than 2*10 ¹⁰ A/m ² requires an increase in the number and duration of current pulses, which affects the heating period of the memory material. Modern trends in increasing the speed of memory operation require the search for the most optimal temporal characteristics of the operation of an electrically controlled memory element, such as heating time, access period for "reading", heating time, shown on the model of the timing diagram of the operation of an electrically controlled memory element (Fig. 15).

Therefore, the current amplitude was increased to 2.5*10 ¹⁰ A/m ² and the pulse duration was chosen to be 1 ms. An increase in electrical power in the operation of semiconductor structures contributes to the development of degradation of metallization systems up to their melting. Thermal storage of data is only possible under conditions of constant heat maintenance through heating. The heating process is implemented by passing current pulses through the memory material with a frequency of 0.2 Hz. What can be classified as "harsh" operating conditions. Therefore, it was decided not to increase the amplitude of the current pulse any more. Further experiments were aimed at selecting the optimal number of heating and heating pulses.

The result of the experiment with the transmission of two heating current pulses with a duty cycle of 0.02 and a pulse frequency of 0.2 Hz proved the correctness of the selected current pulse parameters for the regeneration procedure (Fig. 16)

To write a logical "0", the temperature of the memory material must become less than the second temperature threshold, which occurs as a result of blocking the heating current.

The reading of the information state occurs by measuring the temperature value of the memory material with the stored data with an IR sensor and comparing this temperature with the values of the first and second temperature thresholds.

The values of the first and second temperature thresholds are determined during the first heating of the memory material. The calculation is based on the temperature of the memory material after a decrease in the cooling rate, which is fixed according to the readings taken from the IR sensor 5 seconds after the first heating of the memory material. The value of the first temperature threshold is equal to the temperature of the memory material, after decreasing the cooling rate, increased by 0.5°C. The value of the second temperature threshold is equal to the temperature of the memory material, after reducing the cooling rate, reduced by 0.3°C.

EXAMPLES OF CARRYING OUT THE INVENTION

In FIG. 17 shows an experimental model of an electrically controlled memory element 1, where Melexis MLX90614CI is taken as an IR sensor 3, and the metallization system is fixed on a copper plate 2 and installed in a socket.

Bibliography

1. CUI Zehan, CHEN Mingyu, HUANG Yongbing. Method and system for updating dynamic random access memory (DRAM) and device / Patent RU 2665883 C2, publ. 04.09.2018

2. Wang, L., Li, B. Thermal memory: A storage of phononic information // Physical Review Letters, 2008, Vol. 101, Iss. 26, Article No. 267203

3. Viacheslav Kubytskyi, Svend-Age Biehs and Philippe Ben-Abdallah Radiative Bistability and Thermal Memory// Physical Review Letters. - April 2014. - V. 113. - No. 7

4. Claudio Guarcello, Paolo Solinas, Alessandro Braggio, Massimiliano Di Ventra and Francesco Giazotto, Josephson Thermal Memory, Phys. Rev. app. - January 2018. - V.9. - No. 1. - P.11

5. Roldan, J.B. et al. On the Thermal Models for Resistive Random Access Memory Circuit Simulation// Nanomaterials 2021, 11, 1261.

6. RU 2714379 C1, publ. 02/14/2020

7. RU 2668716 C2, publ. 02.10.2018

8. RU 2599941 C2, publ. 20.10.2016

9. RU No. 2214009 C2, publ. 10.10.2003

10. RU 2572464, publ. 01/10/2016 Bull. No. 1

Claims (13)

1. An electrically controlled memory element containing a memory material with two spaced electrical contacts for supplying an electrical signal to the said memory material, a reader, a means for controlling the energy mode of the memory material, characterized in that the memory material is an aluminum film deposited on the means for controlling the energy mode of the memory material, made in the form of a silicon substrate, the electrical signal supply contacts are installed on opposite sides of the memory element, and the reader is made in the form of an IR sensor. 2. An electrically controlled memory element according to claim 1, characterized in that the memory material is made using vacuum deposition by the electron beam method of metal evaporation. 3. An electrically controlled memory element according to claim 1, characterized in that, additionally, along the perimeter of the memory material, contacts for registering its electrical state are installed equidistantly in an amount of 6 to 12 pieces. 4. The method for reading the information state from the electrically controlled memory element according to claim 1, which consists in measuring the value of the initial indicator with the stored data, determining the correspondence between the first search data and the stored data, and determining the correspondence between the second search data and the stored data, characterized in that the value of the initial indicator is obtained by measuring the temperature of the memory material with an IR sensor, determining the correspondence between the first and second search data and the stored data includes determining the first temperature threshold and the second temperature threshold by calculating a logical "1" information state value and a logical "0" information state value from the temperature of the memory material measured after the cooling rate of the memory material has been reduced, determining the match further includes comparing the first and second temperature thresholds with an initial temperature value of the memory material. 5. The reading method according to claim 4, characterized in that the value of the information state of the logical "1" is equal to the temperature value of the memory material, measured after the cooling rate has decreased, increased by 0.5°C. 6. The reading method according to claim 4, characterized in that the value of the information state of logical "0" is equal to the temperature value of the memory material, measured after the cooling rate has decreased, reduced by 0.3°C. 7. The method of writing to an electrically controlled memory element according to claim 1, which consists in writing an information state to the memory material, including heating the memory material, cooling the memory material to an intermediate temperature threshold, at which the cooling rate of the memory material decreases, and cooling to the second temperature threshold, characterized in that the memory material is heated by passing from 4 to 5 heating current pulses, and to cool it to an intermediate temperature threshold, the number of heating current pulses is reduced. 8. Recording method according to claim 7, characterized in that cooling to the second temperature threshold can be performed by blocking the heating current.