RU2517650C1 - Production of float gyro gas dynamic bearing - Google Patents

Abstract

FIELD: machine building.

SUBSTANCE: flange and support with hemispherical opposed working surfaces are shaped. Ion-beam etching is used to produce aerodynamic profile at support working surface of diameter D as grooves of equivalent spherical helical lines. Variable depth in groove cross-section is defined by monotone increase in thickness of mask element with cut-outs in direction from connector to support pole. Variable depth in groove cross-section is ensured by making the mask second element as a fixed shield perpendicular to ion flow axis.

EFFECT: high quality and precision of bearing and its aerodynamic profile.

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Description

The invention relates to the technology of forming on the precision parts of functional elements, which are a profiled relief structure, and can be used in precision instrumentation in the development and manufacture of precision gas-dynamic bearings of float gyroscopes.

In a two-stage float gyroscope developed by the Concern TsNII Elektribribor OJSC, the main components are a rotor and two gas-dynamic bearings that carry the function of kinetic moment carrier, with the flange of which the specified rotor is rigidly connected, which sets the axis of rotation of the gyroscope. Each of the two gas-dynamic bearings consists of a movable flange and a hemispherical support rigidly fixed to the specified axis of the gyromotor. The technology of manufacturing supports includes forming hemispherical functional elements such as grooves forming an aerodynamic profile on supports that are finally made with precision in tenths of a micrometer.

The quality and accuracy of manufacturing a gas-dynamic bearing, including an aerodynamic profile, largely determines the level of gyro performance: reliability, accuracy, stability. In this regard, for the aerodynamic profile, its configuration is important, providing the required operating conditions for the bearing, including in start and stop modes.

Known technical solutions for the manufacture of gas-dynamic bearings, based on the petal technology, in which the functional elements are rigidly fixed on the working surfaces of the parts of the bearing, the petals of a given configuration described in RF patents No. 2064612, 2010119, 2363867. However, with regard to gyroscopic devices, this is associated with great difficulties determined by the small dimensions of the parts and assemblies of these devices and accuracy requirements at the level of tenths and units of a micrometer. For the same reason, it is unlikely that gyroscope manufacturing technology can be used in gyroscopes [RF patents No. 1401990, No. 2079014,], which provides reduced wear at start and stop modes, lower starting torque and increased product durability, which is a very important operational characteristic of the bearing .

For gyroscopic instruments, using the example of the above two-stage float gyroscope developed by the Concern TsNII Elektribribor OJSC, the most acceptable solution is to perform an aerodynamic profile in the form of a concave relief structure on the working surfaces of the gas-dynamic bearing parts (in particular, supports). This profile represents grooves directed from the plane of the connector to the pole in the form of segments of a spherical helical line and with the orientation of the contacting planes, in which the approximating axial lines of these grooves lie, at an angle α to the plane of the support connector.

The known technology of forming profiled grooves on the supports of a gas-dynamic bearing by machining [Grigorov A.I., Semenov A.P. Processing of gas bearings using ion sputtering. - M: Nauka, 1976, 123 pp.), Which uses milling with a ring mill with a diameter equal to the width of the groove, or grinding with the end face of a cylindrical grinding (the diameter of the grinding end is equal to the width of the groove). In this case, there are obvious disadvantages determined by the low productivity of the process, the low accuracy of the obtained profile, the appearance of large residual stresses that negatively affect the geometry of the structure as a whole, the low cleanliness of the machined surfaces and the limited number of grooves. In addition, the result of processing is a groove of equal width made in an Archimedean spiral, whereas in accordance with the laws of gas dynamics for a spherical working surface of a bearing, it is advisable to have an expanding groove made in the form of a spherical helix.

A technical solution is known based on the use of the electrochemical dimensional processing method [Bearings with gas lubrication to use the grooves on the spherical surface of the bearings of a gas-dynamic bearing to perform the required profile of the bearings [Bearings with gas lubrication. / Ed. N.S. Grassam and J.W. Powell. - M .: Mir, 1966, 424 s]. In this technology, a part of the surface that cannot be etched is protected by a mask, and the part is lowered into the bath for chemical or electrolytic etching.

The disadvantages of this technology are the low accuracy of the formed profile, the likelihood of etching the surface of the support under the mask, contamination of parts with solvents, as well as great difficulties in obtaining grooves of complex shape. A significant drawback is also the limited technological capabilities, due to the fact that the etching time is the main parameter determining the depth of the grooves, and since the time is associated with the characteristics of the solvent (for example, concentration) that can change during etching, the uncertainty appears that makes the process itself uncontrollable.

The same disadvantages are inherent to varying degrees in such technology as the method of photolithography - [Filippov A.Yu., Perminova N.V., Ginzburg V.A. - Calculation of flat photomasks for projecting a given image onto spherical surfaces // Gyroscopy and navigation. - St. Petersburg: Central Research Institute "Elektropribor", 1997, No. 3, p. 35-38].

The listed technical solutions do not allow forming an aerodynamic profile in the form of grooves having a variable depth in the longitudinal and transverse directions, whereas such a configuration, in accordance with the basic laws and provisions of gas dynamics [Precision gas bearings / Ed. Filipova A.Yu. and Sipenkova I.E. - SPb: State Research Center of the Russian Federation "Central Research Institute" Elektropribor ", 2007, 504 pp.], Provides the most optimal conditions for the functioning of a gas-dynamic bearing. It should be noted that a very promising configuration of the grooves is a profile that is variable in the cross section of the groove, which, provided that the direction of the depth changes relative to the direction of rotation of the bearing parts during its operation, will reduce wear on start and stop modes and reduce the starting torque by using the the effect of the "propeller", which is determined by the slope of the bottom of the groove relative to the plane of the connector support.

One of the most advanced methods for obtaining an aerodynamic profile on parts and components of a gas-dynamic bearing is ion etching technology, which in many ways allows to eliminate the above disadvantages.

According to the largest number of common essential features, a method for producing gas-dynamic grooves based on ion etching technology has been adopted as a prototype [RF Patent No. 2421845].

This technology consists in the fact that to obtain a given profile of a groove having a variable depth in the cross section (grooves with an inclined bottom), a mask that includes two elements is used. The tight-fitting element of the template mask has windows of the required shape, providing accurate contours of the groove. The second movable element of the shielding mask with the windows is placed on the mask template, and during the etching of the workpiece, the windows of the mask mask are periodically overlapped by the edges of the windows of the shield mask by moving the shield mask counterclockwise or clockwise, which is a multiple of the step of placing the gas-dynamic grooves on the friction surface, and then move both masks in one direction by an angle corresponding to the angular pitch of the gas-dynamic grooves on the friction surface, and re-ion azmennoe etching.

In this case, the ion etching process is carried out under the conditions of the reciprocating motion of the screening mask with a uniform or uneven angular velocity, and the nature of the change in the depth of the groove is determined by the law of motion and the shape of the swinging element of the mask. Obviously, this takes into account the above different etching rate of the groove sections, determined by the displacement of the axis of rotation of the part relative to the axis of the ion flux.

The disadvantage of the prototype method is the limited technological capabilities and low accuracy of obtaining grooves of the aerodynamic profile on the hemispherical surfaces of the gas-dynamic bearing.

This is due to the fact that in the process of ion etching of hemispherical surfaces it is extremely difficult to ensure the required kinematics accuracy of the coordinated movement of the part (rotation) and the movable mask (swing). It limits technological capabilities and does not allow ensuring the accuracy of the aerodynamic profile at the level of tenths and units of a micrometer and the fact that the configuration of the grooves is actually set both by nominal values of the geometric dimensions and by the ratio of the speeds of movement of the part (rotation) and the moving element of the mask (swing), etc. e. parameters that are difficult to change if necessary. A significant drawback is that this technical solution is difficult to implement for multi-position processing of parts with hemispherical surfaces, which can be very important in the manufacture of a set of products, requiring the complete identity of the resulting profile.

The present invention is to improve the accuracy of the aerodynamic profile of precision gas-dynamic bearings.

According to the invention, the problem is solved by the fact that in the process of ion etching, the axis of rotation of the support is tilted to the direction of the ion flow with the orientation of one of the adjacent planes, in which the approximating axial lines of the grooves of the aerodynamic profile lie parallel to the axis of the ion flow and the projection of this plane onto the plane, perpendicular to the axis of the ion flux, at a distance L = (0.15-0.35) D from the geometric center of the projection of the treated support zone onto a plane perpendicular to the axis of the ion flux, The given depth of the grooves in the longitudinal section is set by a monotonic increase in the thickness of the mask element with slots in the direction from the connector to the pole of the support, and the variable depth of the grooves in the cross section is provided by performing the second mask element in the form of a fixed screen perpendicular to the axis of the ion flux, while the boundary of the screening zone displaced by a distance L from said geometric center in the direction of said projection of a contacting plane.

The invention is illustrated by drawings, where figure 1 shows the orientation of the support of a gas-dynamic bearing relative to the axis of symmetry of the ion flow, when the plane in which the projection of the treated area of the support lies is perpendicular to the specified axis; figure 2 is a diagram of successive stages of forming grooves of variable depth in longitudinal and transverse sections, and figure 3 is a configuration of the ion etching zones of the support depending on its orientation relative to the ion flux.

In figure 1, 2 and 3 accepted notation:

1 - support gas-dynamic bearing;

2 - working spherical surface of the support 1 (figure 2, 3 are not indicated);

3 - plane of the connector support 1 (figure 2, 3 is not indicated);

4 - grooves of the aerodynamic profile (not shown in FIGS. 2, 3) made on the spherical surface 2 of the support 1, the contacting planes of which with the approximating axial lines of these grooves lying in them are oriented to the plane of the connector 3 of the support 1 at an angle α (angle α on figures 1, 2 and 3 are not indicated);

5 - ion flow from the source (not indicated in FIG. 1), providing the process of ion etching of the grooves 4 on the surface 2 of the support 1;

6 - fixed screen defining the overlap zone between the support 1 and the ion stream 5;

7 - mask with slots, tightly adjacent to the support 1 and sets the spiral orientation of the grooves 4;

D is the diameter of the working spherical surface 2 of the support 1 (figure 2, 3 is not indicated);

O is the center of the working spherical surface 2 of the support 1 lying on the plane of the connector 3 (not shown in Fig.2, 3);

O ∗ is the projection of the center O of the working spherical surface 2 of the support 1 onto a plane parallel to the direction of the ion flux 5 (not indicated in FIG. 1);

O ₁ O ₂ - the axis of symmetry and the axis of rotation of the support 1 during ion etching of the grooves 4 (not shown in figure 2, 3);

w is the vector of the angular velocity of rotation of the support 1 (figure 2, 3 is not indicated);

O ₃ O ₄ - axis of symmetry of the ion flux 5 (not shown in figures 1, 3);

(O ₃ O ₄ ) ∗ is the projection of the axis of symmetry O ₃ O _{4 of the} ion flux 5 onto a plane perpendicular to this axis (not indicated in FIGS. 2, 3);

O _c - the geometric center of the projection processed by ion etching of the support zone 1 on a plane perpendicular to the axis O ₃ O _{4 of the} ion stream 5 (not shown in Fig.2, 3);

O _C ∗ is the projection of the geometric center O _{C of the} treated zone of the support 1 onto a plane parallel to the axis O ₃ O _{4 of the} ion stream 5 (not indicated in FIGS. 1, 3);

B-B is the cross-section of the support 1 by a plane oriented to the plane of the connector 3 of the support 1 at an angle (90 ° -α), where α is the angle of inclination of each of the contacting planes, in which the approximating axial lines of these grooves 4 lie, to the plane of the connector 3 of the support 1, i.e. perpendicular to the grooves 4 of the aerodynamic profile;

(BB) ₁ — section of the BB section near the plane of connector 3 of support 1 (not indicated in FIG. 3);

(BB) ₂ - section of the BB section corresponding to the part of the groove 4 close to the pole of the support 1;

h ₁ - the thickness of the mask with slots 7, tightly adjacent to the support 1, corresponding to the section (BB) ₁ section BB (not shown in figure 3);

h ₂ is the thickness of the mask 7, corresponding to the section (BB) ₂ section BB (in figure 3 is not indicated);

L - value boundary ion flux shielding screen fixed zone 6 offset from the geometric center O _i of the projection treated support zone 1 on a plane perpendicular to the axis of ion flow 5 (not indicated in Figure 3);

β ₁ and β ₂ are the angles between the axis of the ion flux O ₃ O ₄ and the radial segments defining the boundaries of the groove 4, for the section section (BB) ₂ with a thickness h ₂ of the mask wall 7, corresponding to the beginning of the etching process of the edge of the groove 4, determined angle β ₂ (not indicated in FIG. 1);

β _{1 (1)} and β _{2 (1)} are the angles between the axis of the ion flux O ₃ O ₄ and the radial segments defining the boundaries of the groove 4 for the section section (B-B) ₂ with a thickness h ₂ of the mask wall 7, corresponding to the completion of the process etching the edges of the groove 4, taking into account the overlap of the ion flux 5 by the screen 6 (not indicated in figure 1);

γ ₁ and γ ₂ are the angles between the axis of the ion flux O ₃ O ₄ and the radial segments defining the boundaries of the groove 4 for the section section (B-B) ₁ with a thickness h ₁ of the mask wall 7, corresponding to the beginning of the etching process of the edge of the groove 4, determined angle γ ₂ (not shown in FIGS. 1, 3);

I - the zone of predominant etching of the grooves 4 in cross section from the side determined by the angle Pi (72) (not indicated in Fig. 1, 2);

II - zone of equivalent etching of the entire surface of the grooves 4 (not shown in Fig.1, 2);

III - the zone of predominant etching of the grooves 4 in cross section from the side defined by the angle β ₁ (γ ₁ ) (not shown in FIGS. 1, 2);

I-1 and I-2 - the initial and final positions of the support 1, corresponding to zone I of the predominant etching of the grooves 4 (not shown in Fig.1, 2);

II-1 and II-2 - the initial and final positions of the support 1, corresponding to zone II of equal etching of the entire surface of the grooves 4, symmetric axis O ₃ O _{4 of the} ion flux 5 and defined by angles β ₃ (not indicated in FIGS. 1, 2);

III-1 and III-2 - the initial and final positions of the support 1, corresponding to zone III of the predominant etching of the grooves 4 (not shown in Fig.1, 2).

The proposed method of manufacturing a gas-dynamic bearing of a float gyroscope consists in performing the totality and sequence of the following technological and operations.

1) In the vacuum chamber of the installation, in which an ion source is provided, a support 1 mounted on a rotation drive with a mask 7 is placed tightly adjacent to the outer spherical surface 2 of the diameter D of the support 1 and has slots defining the configuration of the grooves 4 in the form of spherical helical lines (Fig. .one). In this case, the axis of symmetry O ₁ O _{2 of the} support 1 coincides with its axis of rotation with an angular velocity w. The support 1 is installed in such a way that one of the contacting planes in which the approximating axial lines of these grooves lie lie oriented parallel to the O ₃ O ₄ axis of the ion flow 5, and the projection of this plane onto a plane perpendicular to the specified axis is offset by a distance L = ( 0.15-0.35) D from the geometric center O _{c of the} projection of the treated zone of the support 1 onto a plane perpendicular to the axis O ₃ O _{4 of the} ion stream 5.

The legitimacy of the use of the concept of contiguous planes is due to the well-known calculation methods of conversion for a helical line from a spherical to a Cartesian coordinate system [G. Korn, T. Korn. Handbook of mathematics for scientists and engineers, Moscow: Nauka, 1974, 832 pp.].

Such positioning of the support 1 corresponds to the angle of inclination of the axis of rotation O ₁ O _{2 of the} support 1 to the direction of the ion flux 5 (or to the axis O ₃ O ₄ ) close to 90 °. In this case, the projection of the indicated contacting plane onto the plane perpendicular to the axis O ₃ O _{4 of the} ion flow 5 will be a straight line, and the projections of the remaining contacting planes will be almost parallel to this line, since the grooves 4 are made with an inclination at the same angles α to the plane of the connector 3 supports 1.

Deviations in the parallelism of these adjacent projections are due to the fact that the initial grooves 4 are segments of helical lines evenly distributed on the surface of the support 1, and the error value depends on the distance between the grooves 4. The displacement of the specified projection of the contacting plane by a distance L = (0.15- 0,35) D from the geometric center O _n projection machined bearing zone 1 on a plane perpendicular to the axis O O _{3 4} 5 ion flux associated with the formation of the profile groove 4 having a variable depth in the cross-sectional .

The placement and the required orientation of the support 1 is carried out using the units of the chamber equipment of the installation, which also contain a rotation drive and fasteners.

2) It is possible to practically realize the presented scheme of the exhibition and orientation of the support 1 relative to the axis O ₃ O _{4 of the} ion flow 5, using as an exhibition of the angle of inclination of the rotation axis O ₁ O _{2 of the} support 1 close to the normal to the direction of the ion flow 5 (or to the axis O ₃ O ₄ ), and any stencil. This stencil may contain elements in its design that provide the necessary positioning of the slits of the mask 7, the position of the geometric center O _{c of} the ion-supported zone 1 processed by ion etching on a plane perpendicular to the O ₃ O ₄ axis of ion flow 5, and the screen 6 is exposed with the required offset L. Obviously that orientation with placement of the center O _c on the axis O ₃ O _{4 of the} ion stream 5 is more effective. The concrete implementation of this scheme is unprincipled for the invention.

3) Figure 2 schematically shows the process of forming grooves 4 by ion etching to obtain their variable depth in the longitudinal direction. This is ensured by the implementation of the mask 7 with slots, which fits snugly on the spherical surface of the support, with a monotonous increase in the wall thickness of this mask in the direction from the connector 3 to the pole of the support 1. Section BB (FIG. 1) includes a section (BB) ₁ adjacent to the plane of the connector 3 of the support 1. In this section, the mask 7 has a thickness h ₁ . In the area (BB) ₂ , corresponding to the part of the groove 4, close to the pole of the support 1, the mask 7 has a wall thickness h ₂ . Moreover, h ₁ <h ₂ .

Obviously, the depth of the grooves in the process of ion etching is determined by the etching rate, which is determined by the parameters of the ion source, and the time of exposure of the ion stream 5 to the treated areas (through the slots in the mask 7) of the support 1. Moreover, for the adopted circuit (Fig. 1), when there is a rotation of the support 1 with an angular velocity w relative to the ion flux 5, the walls of the mask to some extent shield the treated area, limiting the time of etching. Performing (Fig. 1) a section B-B of the support 1 with the mask 7 and considering the plan of ion etching in plan (view A) in the indicated section, one can imagine the shielding effect of the walls of the mask 7. In Fig. 2, it is clearly shown as the time during which there is a process of ion etching of a specific section of the support 1, depending on the thickness of the mask wall in this place.

For section (B-B) _{2 of} section B-B corresponding to the part of groove 4 close to the pole of support 1, where the mask wall thickness is h ₂ , the etching process begins at angles β ₁ and β ₂ between the axis of the ion flux O ₃ O ₄ and radial segments defining the boundaries of the groove 4 (or the side walls of the slots in the mask 7). At the same time, for the section (B-B) ₁ near the plane of the connector 3 of the support 1, where the wall thickness of the mask is h ₁ , etching begins at angles γ ₁ and γ ₂ . And since h ₁ <h ₂ , which determines the ratios β ₁ <γ ₂ and β ₁ <γ ₂ , the etching time of the (BB) ₂ section will be correspondingly shorter than (BB) ₁ , and, as a result, the depth of the groove near the plane of the connector 3 will be greater than in the region shifted to the pole part of the support 1. By setting the change in the thickness of the wall of the mask 7 according to a certain law, it is possible to adjust the degree of decrease in the depth of the grooves 4 in the direction from the plane of the connector 3 to the pole of the support 1. Very important the advantage of the proposed technical solution for the implementation of the grooves 4 of the aerodynamic profile with p the longitudinal depth in the longitudinal direction is the ability to compensate for the change in the etching rate depending on the angle of incidence of the ion flux, which is very important for the sphere by varying the wall thickness of the mask 7. Thus, the mask 7, which is adjacent to the spherical surface 3 of the support 1, is an element providing a variable depth of the grooves 4 of the aerodynamic profile of the support 1, and the process of controlling the specified depth of the grooves 4 takes into account all factors, including the dependence of the ion etching rate on and a drop of ion flux on the work surface 5, which is very important for spherical products.

4) Simultaneously with the formation of grooves 4 of variable depth in the longitudinal direction presented in figure 2, the diagram illustrates the process of making these grooves 4 with a depth that varies in the cross section. This is achieved placing a stationary axis perpendicular to the screen 6 O ₃ O ₄ ion flux 5 with overlapping offset boundaries ion stream 5 at distance L from the geometric center O _i of the projection treated support zone 1 on a plane perpendicular to the axis O ₃ O ₄ ion flux 5. Figure .2 denotes the projection O _n * this geometrical center on the plane parallel to the axis O ₃ O _4, 5. in fact the ion flux to the species from the ion source (Figure 1) aligned projection osculating plane and the boundary shielding ion flow 5. spolzuya above situation, it can be shown (Figure 2) that the time for ion processing section (B-B) ₂ B-B cross section (with equal wall thickness h ₂ mask 7) is determined by the values of the angles β ₁ and β ₂ to the position the groove 4 being machined on one side, and the angle β _{1 (1)} for the position of the groove on the other side of the axis O ₃ O _{4 of the} ion stream 5, on which lies the point O _c ∗. Moreover, the angle β _{1 (1) itself} is determined by the placement of the stationary screen 6, i.e. distance L.

Obviously, for β ₂ > β _{1 (1)} (which is determined by the value of L), etching will take place to a greater extent for the section of groove 4, indicated in FIG. 2 by angles β ₂ and β _{2 (1),} respectively, to a lesser extent for the groove portion defined by angles β ₁ and β _{1 (1)}

The above diagram of the formation of grooves 4 with a variable depth in the cross section can be clarified using the definition of the etching zones indicated in figure 3:

- zone I, defined by the positions I-1 and I-2 of the section (BB) _{2 of the} BB section, where the groove 4 is predominantly etched from the side of angle β ₂ , while for position I-2 the angle β ₂ = 0, those. in this section, the groove 4, by definition, has a variable depth in the cross section;

- zone II, defined by the positions II-1 and II-2 (it is obvious that the position II-2 coincides with the position 1-2 of zone I) of the section (BB) _of section BB, where there is uniform etching of the entire surface of the groove 4, since there is no shielding from the walls of the mask 7, in this case, the groove 4 will deepen while maintaining the inclination of its base, obtained in zone I; additionally, zone II can be determined by angles β ₃ , and the angle β ₃ is associated with the width of the groove 4 (FIG. 3);

- zone III, which is defined by positions III-1 (coincides with position II-2) and III-2 of section (BB) _{2 of} section BB, where groove 4 is predominantly etched from angle β ₁ , i.e. here, the variable profile of the groove 4 obtained in zone I and uniformly deepened in zone II begins to align and, if there were no screen 6, then, taking into account the symmetry of the ion etching scheme, by the end of zone III, the groove 4 would have the same depth in cross section; however, screen 6, restricting zone III, sets a certain value of variable depth for a given cycle (rotation of support 1 around its axis).

Obviously, by setting the displacement L (including for the projection of the contacting plane in which the approximating axial line of the groove of the aerodynamic profile lies), it is possible to increase or decrease zone III, thereby controlling the degree of curvature of the grooves profile 4 variable in the cross section.

It is obvious that the ion etching time, determined by the width of these zones (Fig. 3), is also set by the wall thickness of the mask 7. Moreover, by setting the ratio of the wall thickness to the width of the groove 4, the ratio of the magnitude of the zones I, II, and III can be adjusted. Thus, the nature of the change in the wall thickness of the tight-fitting mask provides a variable depth of the grooves of the aerodynamic profile in the longitudinal direction, and the combined action of a fixed screen and the walls of the mask in a certain way provides a variable depth of the grooves in the cross section.

This fully determines the unity of the essential features of the invention and their stable relationship.

The execution on the working spherical surface 2 of the support 1 of the gas-dynamic bearing of the grooves 4 of the aerodynamic profile having a variable depth in the cross section, taking into account the fact that the direction of decreasing the depth is opposite to the direction of rotation of the flange relative to the support during the operation of the gas-dynamic bearing, creates an additional effect, which can be defined as " propeller effect ”, which provides an additional increase in the bearing capacity of the support at the start-up stage of the bearing. This is very important both from the point of view of ensuring the availability time of the float gyroscope, and in the process of functioning of the gyroscope in operating modes (calibration, subcalibration and autonomous mode).

Thus, the proposed method of manufacturing a gas-dynamic bearing allows for one technological cycle to obtain aerodynamic profile grooves having the most effective configuration from the point of view of aerodynamic laws, which is associated with the implementation of grooves having a variable depth in both longitudinal and transverse sections.

The present invention has been tested in the manufacture of prototypes of a two-stage float gyroscope.

Claims (1)

A method of manufacturing a gas-dynamic bearing of a float gyroscope, comprising shaping a flange and a support with hemispherical counter-facing working surfaces and performing, by means of ion etching, on the working surface of a support of diameter D of an aerodynamic profile in the form of grooves from equal segments of spherical helical lines made with an inclination at equal angles to the plane of the connector supports, while the grooves are formed with a variable depth in the longitudinal direction and transverse for each groove section by rotating around its own axis of symmetry of the mask consisting of at least two elements, one of which is provided with slits corresponding to the configuration of the formed grooves, the mask is placed between the ion source and the support snugly member with slots to the hemispherical surface of the support, characterized in that in the process of ion etching, the axis of rotation of the support is tilted to the direction of the ion flow with the orientation of one of the contacting planes in which the approximate the axial lines of the grooves of the aerodynamic profile, parallel to the axis of the ion flux and the location of the projection of this plane on a plane perpendicular to the axis of the ion flux, at a distance L = (0.15-0.35) D from the geometric center of the projection of the treated support zone onto a plane perpendicular to the axis ion flow, a variable depth of the grooves in the longitudinal section is set by a monotonic increase in the thickness of the mask element with slots in the direction from the connector to the pole of the support, and a variable depth of the grooves in the cross section is provided by the second element of the mask in the form of a fixed screen perpendicular to the axis of the ion flux, while the boundary of the screening zone is shifted by a distance L from the geometric center in the direction of the specified projection of the contacting plane.

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