GB1311178A
(en)
*
|
1970-09-19 |
1973-03-21 |
Ferranti Ltd |
Semiconductor devices
|
BE789991A
(fr)
*
|
1971-10-12 |
1973-04-12 |
Siemens Ag |
Dispositif logique, en particulier decodeur a elements redondants
|
US3818252A
(en)
*
|
1971-12-20 |
1974-06-18 |
Hitachi Ltd |
Universal logical integrated circuit
|
US3877051A
(en)
*
|
1972-10-18 |
1975-04-08 |
Ibm |
Multilayer insulation integrated circuit structure
|
US3844831A
(en)
*
|
1972-10-27 |
1974-10-29 |
Ibm |
Forming a compact multilevel interconnection metallurgy system for semi-conductor devices
|
US4060888A
(en)
*
|
1976-06-29 |
1977-12-06 |
Tyco Filters Division, Inc. |
Method of improving ohmic contact through high-resistance oxide film
|
FR2404895A1
(fr)
*
|
1977-09-30 |
1979-04-27 |
Radiotechnique Compelec |
Cellule de memoire programmable a diodes semiconductrices
|
IT1110843B
(it)
*
|
1978-02-27 |
1986-01-06 |
Rca Corp |
Contatto affondato per dispositivi mos di tipo complementare
|
US4502208A
(en)
*
|
1979-01-02 |
1985-03-05 |
Texas Instruments Incorporated |
Method of making high density VMOS electrically-programmable ROM
|
DE3128562A1
(de)
*
|
1981-07-18 |
1983-01-27 |
Pierburg Gmbh & Co Kg, 4040 Neuss |
Schwimmer einer schwimmerkammer
|
US4608585A
(en)
*
|
1982-07-30 |
1986-08-26 |
Signetics Corporation |
Electrically erasable PROM cell
|
US4543594A
(en)
*
|
1982-09-07 |
1985-09-24 |
Intel Corporation |
Fusible link employing capacitor structure
|
US4584669A
(en)
*
|
1984-02-27 |
1986-04-22 |
International Business Machines Corporation |
Memory cell with latent image capabilities
|
US4701780A
(en)
*
|
1985-03-14 |
1987-10-20 |
Harris Corporation |
Integrated verticle NPN and vertical oxide fuse programmable memory cell
|
US4635345A
(en)
*
|
1985-03-14 |
1987-01-13 |
Harris Corporation |
Method of making an intergrated vertical NPN and vertical oxide fuse programmable memory cell
|
US4899205A
(en)
*
|
1986-05-09 |
1990-02-06 |
Actel Corporation |
Electrically-programmable low-impedance anti-fuse element
|
US5266829A
(en)
*
|
1986-05-09 |
1993-11-30 |
Actel Corporation |
Electrically-programmable low-impedance anti-fuse element
|
US4823181A
(en)
*
|
1986-05-09 |
1989-04-18 |
Actel Corporation |
Programmable low impedance anti-fuse element
|
US4876220A
(en)
*
|
1986-05-16 |
1989-10-24 |
Actel Corporation |
Method of making programmable low impedance interconnect diode element
|
US4881114A
(en)
*
|
1986-05-16 |
1989-11-14 |
Actel Corporation |
Selectively formable vertical diode circuit element
|
US5367208A
(en)
*
|
1986-09-19 |
1994-11-22 |
Actel Corporation |
Reconfigurable programmable interconnect architecture
|
GB2198581B
(en)
*
|
1986-12-04 |
1990-01-24 |
Marconi Electronic Devices |
Semiconductor arrangement
|
US4829014A
(en)
*
|
1988-05-02 |
1989-05-09 |
General Electric Company |
Screenable power chip mosaics, a method for fabricating large power semiconductor chips
|
US5614756A
(en)
*
|
1990-04-12 |
1997-03-25 |
Actel Corporation |
Metal-to-metal antifuse with conductive
|
US5272101A
(en)
*
|
1990-04-12 |
1993-12-21 |
Actel Corporation |
Electrically programmable antifuse and fabrication processes
|
US5780323A
(en)
*
|
1990-04-12 |
1998-07-14 |
Actel Corporation |
Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug
|
US5624741A
(en)
*
|
1990-05-31 |
1997-04-29 |
E. I. Du Pont De Nemours And Company |
Interconnect structure having electrical conduction paths formable therein
|
US5163180A
(en)
*
|
1991-01-18 |
1992-11-10 |
Actel Corporation |
Low voltage programming antifuse and transistor breakdown method for making same
|
US5242851A
(en)
*
|
1991-07-16 |
1993-09-07 |
Samsung Semiconductor, Inc. |
Programmable interconnect device and method of manufacturing same
|
US5241496A
(en)
*
|
1991-08-19 |
1993-08-31 |
Micron Technology, Inc. |
Array of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cells
|
US5498895A
(en)
*
|
1993-07-07 |
1996-03-12 |
Actel Corporation |
Process ESD protection devices for use with antifuses
|
US5369054A
(en)
*
|
1993-07-07 |
1994-11-29 |
Actel Corporation |
Circuits for ESD protection of metal-to-metal antifuses during processing
|
US5468680A
(en)
*
|
1994-03-18 |
1995-11-21 |
Massachusetts Institute Of Technology |
Method of making a three-terminal fuse
|
US5633189A
(en)
*
|
1994-08-01 |
1997-05-27 |
Actel Corporation |
Method of making metal to metal antifuse
|
US5741720A
(en)
*
|
1995-10-04 |
1998-04-21 |
Actel Corporation |
Method of programming an improved metal-to-metal via-type antifuse
|
US5859562A
(en)
*
|
1996-12-24 |
1999-01-12 |
Actel Corporation |
Programming circuit for antifuses using bipolar and SCR devices
|
US6385074B1
(en)
|
1998-11-16 |
2002-05-07 |
Matrix Semiconductor, Inc. |
Integrated circuit structure including three-dimensional memory array
|
US6034882A
(en)
*
|
1998-11-16 |
2000-03-07 |
Matrix Semiconductor, Inc. |
Vertically stacked field programmable nonvolatile memory and method of fabrication
|
US6351406B1
(en)
|
1998-11-16 |
2002-02-26 |
Matrix Semiconductor, Inc. |
Vertically stacked field programmable nonvolatile memory and method of fabrication
|
US7157314B2
(en)
*
|
1998-11-16 |
2007-01-02 |
Sandisk Corporation |
Vertically stacked field programmable nonvolatile memory and method of fabrication
|
US6888750B2
(en)
*
|
2000-04-28 |
2005-05-03 |
Matrix Semiconductor, Inc. |
Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
|
US6631085B2
(en)
|
2000-04-28 |
2003-10-07 |
Matrix Semiconductor, Inc. |
Three-dimensional memory array incorporating serial chain diode stack
|
US8575719B2
(en)
|
2000-04-28 |
2013-11-05 |
Sandisk 3D Llc |
Silicon nitride antifuse for use in diode-antifuse memory arrays
|
US6624011B1
(en)
|
2000-08-14 |
2003-09-23 |
Matrix Semiconductor, Inc. |
Thermal processing for three dimensional circuits
|
US6580124B1
(en)
|
2000-08-14 |
2003-06-17 |
Matrix Semiconductor Inc. |
Multigate semiconductor device with vertical channel current and method of fabrication
|
WO2002015277A2
(en)
|
2000-08-14 |
2002-02-21 |
Matrix Semiconductor, Inc. |
Dense arrays and charge storage devices, and methods for making same
|
US6627530B2
(en)
|
2000-12-22 |
2003-09-30 |
Matrix Semiconductor, Inc. |
Patterning three dimensional structures
|
US6661730B1
(en)
|
2000-12-22 |
2003-12-09 |
Matrix Semiconductor, Inc. |
Partial selection of passive element memory cell sub-arrays for write operation
|
US6545898B1
(en)
|
2001-03-21 |
2003-04-08 |
Silicon Valley Bank |
Method and apparatus for writing memory arrays using external source of high programming voltage
|
US6897514B2
(en)
*
|
2001-03-28 |
2005-05-24 |
Matrix Semiconductor, Inc. |
Two mask floating gate EEPROM and method of making
|
US6593624B2
(en)
|
2001-09-25 |
2003-07-15 |
Matrix Semiconductor, Inc. |
Thin film transistors with vertically offset drain regions
|
US6525953B1
(en)
|
2001-08-13 |
2003-02-25 |
Matrix Semiconductor, Inc. |
Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
|
US6841813B2
(en)
*
|
2001-08-13 |
2005-01-11 |
Matrix Semiconductor, Inc. |
TFT mask ROM and method for making same
|
WO2003025944A1
(en)
*
|
2001-09-18 |
2003-03-27 |
Kilopass Technologies, Inc. |
Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
|
US6798693B2
(en)
*
|
2001-09-18 |
2004-09-28 |
Kilopass Technologies, Inc. |
Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
|
US6766960B2
(en)
*
|
2001-10-17 |
2004-07-27 |
Kilopass Technologies, Inc. |
Smart card having memory using a breakdown phenomena in an ultra-thin dielectric
|
US6700151B2
(en)
*
|
2001-10-17 |
2004-03-02 |
Kilopass Technologies, Inc. |
Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric
|
US6624485B2
(en)
|
2001-11-05 |
2003-09-23 |
Matrix Semiconductor, Inc. |
Three-dimensional, mask-programmed read only memory
|
US6853049B2
(en)
|
2002-03-13 |
2005-02-08 |
Matrix Semiconductor, Inc. |
Silicide-silicon oxide-semiconductor antifuse device and method of making
|
US6898116B2
(en)
*
|
2002-04-26 |
2005-05-24 |
Kilopass Technologies, Inc. |
High density semiconductor memory cell and memory array using a single transistor having a buried N+ connection
|
US6992925B2
(en)
*
|
2002-04-26 |
2006-01-31 |
Kilopass Technologies, Inc. |
High density semiconductor memory cell and memory array using a single transistor and having counter-doped poly and buried diffusion wordline
|
US6777757B2
(en)
*
|
2002-04-26 |
2004-08-17 |
Kilopass Technologies, Inc. |
High density semiconductor memory cell and memory array using a single transistor
|
US6940751B2
(en)
*
|
2002-04-26 |
2005-09-06 |
Kilopass Technologies, Inc. |
High density semiconductor memory cell and memory array using a single transistor and having variable gate oxide breakdown
|
US6737675B2
(en)
|
2002-06-27 |
2004-05-18 |
Matrix Semiconductor, Inc. |
High density 3D rail stack arrays
|
US6650143B1
(en)
|
2002-07-08 |
2003-11-18 |
Kilopass Technologies, Inc. |
Field programmable gate array based upon transistor gate oxide breakdown
|
US7031209B2
(en)
*
|
2002-09-26 |
2006-04-18 |
Kilopass Technology, Inc. |
Methods and circuits for testing programmability of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectric
|
US7042772B2
(en)
*
|
2002-09-26 |
2006-05-09 |
Kilopass Technology, Inc. |
Methods and circuits for programming of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectric
|
US20060249753A1
(en)
*
|
2005-05-09 |
2006-11-09 |
Matrix Semiconductor, Inc. |
High-density nonvolatile memory array fabricated at low temperature comprising semiconductor diodes
|
US6791891B1
(en)
|
2003-04-02 |
2004-09-14 |
Kilopass Technologies, Inc. |
Method of testing the thin oxide of a semiconductor memory cell that uses breakdown voltage
|
US6924664B2
(en)
*
|
2003-08-15 |
2005-08-02 |
Kilopass Technologies, Inc. |
Field programmable gate array
|
US7177183B2
(en)
|
2003-09-30 |
2007-02-13 |
Sandisk 3D Llc |
Multiple twin cell non-volatile memory array and logic block structure and method therefor
|
US6972986B2
(en)
*
|
2004-02-03 |
2005-12-06 |
Kilopass Technologies, Inc. |
Combination field programmable gate array allowing dynamic reprogrammability and non-votatile programmability based upon transistor gate oxide breakdown
|
US7064973B2
(en)
*
|
2004-02-03 |
2006-06-20 |
Klp International, Ltd. |
Combination field programmable gate array allowing dynamic reprogrammability
|
US20050218929A1
(en)
*
|
2004-04-02 |
2005-10-06 |
Man Wang |
Field programmable gate array logic cell and its derivatives
|
US8767433B2
(en)
|
2004-05-06 |
2014-07-01 |
Sidense Corp. |
Methods for testing unprogrammed OTP memory
|
US7755162B2
(en)
*
|
2004-05-06 |
2010-07-13 |
Sidense Corp. |
Anti-fuse memory cell
|
WO2005109516A1
(en)
*
|
2004-05-06 |
2005-11-17 |
Sidense Corp. |
Split-channel antifuse array architecture
|
US8735297B2
(en)
|
2004-05-06 |
2014-05-27 |
Sidense Corporation |
Reverse optical proximity correction method
|
US9123572B2
(en)
|
2004-05-06 |
2015-09-01 |
Sidense Corporation |
Anti-fuse memory cell
|
US7511982B2
(en)
*
|
2004-05-06 |
2009-03-31 |
Sidense Corp. |
High speed OTP sensing scheme
|
US7164290B2
(en)
*
|
2004-06-10 |
2007-01-16 |
Klp International, Ltd. |
Field programmable gate array logic unit and its cluster
|
US20050275427A1
(en)
*
|
2004-06-10 |
2005-12-15 |
Man Wang |
Field programmable gate array logic unit and its cluster
|
US7135886B2
(en)
*
|
2004-09-20 |
2006-11-14 |
Klp International, Ltd. |
Field programmable gate arrays using both volatile and nonvolatile memory cell properties and their control
|
US7193436B2
(en)
*
|
2005-04-18 |
2007-03-20 |
Klp International Ltd. |
Fast processing path using field programmable gate array logic units
|
US20090272958A1
(en)
*
|
2008-05-02 |
2009-11-05 |
Klaus-Dieter Ufert |
Resistive Memory
|
US8049299B2
(en)
*
|
2009-02-25 |
2011-11-01 |
Freescale Semiconductor, Inc. |
Antifuses with curved breakdown regions
|
US8221635B2
(en)
*
|
2009-03-03 |
2012-07-17 |
Raytheon Company |
Process for multiple platings and fine etch accuracy on the same printed wiring board
|
US20100283053A1
(en)
*
|
2009-05-11 |
2010-11-11 |
Sandisk 3D Llc |
Nonvolatile memory array comprising silicon-based diodes fabricated at low temperature
|
US9761595B2
(en)
|
2013-02-21 |
2017-09-12 |
Infineon Technologies Ag |
One-time programming device and a semiconductor device
|
US9627395B2
(en)
|
2015-02-11 |
2017-04-18 |
Sandisk Technologies Llc |
Enhanced channel mobility three-dimensional memory structure and method of making thereof
|
US9478495B1
(en)
|
2015-10-26 |
2016-10-25 |
Sandisk Technologies Llc |
Three dimensional memory device containing aluminum source contact via structure and method of making thereof
|
WO2018093275A1
(en)
*
|
2016-11-17 |
2018-05-24 |
Stretchsense Limited |
A stretch sensor with an improved flexible interconnect
|
US11074985B1
(en)
|
2020-02-25 |
2021-07-27 |
HeFeChip Corporation Limited |
One-time programmable memory device and method for operating the same
|
US11152381B1
(en)
|
2020-04-13 |
2021-10-19 |
HeFeChip Corporation Limited |
MOS transistor having lower gate-to-source/drain breakdown voltage and one-time programmable memory device using the same
|
US11114140B1
(en)
|
2020-04-23 |
2021-09-07 |
HeFeChip Corporation Limited |
One time programmable (OTP) bits for physically unclonable functions
|
US11437082B2
(en)
|
2020-05-17 |
2022-09-06 |
HeFeChip Corporation Limited |
Physically unclonable function circuit having lower gate-to-source/drain breakdown voltage
|