KR970052832A - Operation method of semiconductor device manufacturing equipment related to film formation - Google Patents

Operation method of semiconductor device manufacturing equipment related to film formation Download PDF

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Publication number
KR970052832A
KR970052832A KR1019950055719A KR19950055719A KR970052832A KR 970052832 A KR970052832 A KR 970052832A KR 1019950055719 A KR1019950055719 A KR 1019950055719A KR 19950055719 A KR19950055719 A KR 19950055719A KR 970052832 A KR970052832 A KR 970052832A
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KR
South Korea
Prior art keywords
value
target value
setting
semiconductor device
device manufacturing
Prior art date
Application number
KR1019950055719A
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Korean (ko)
Inventor
김기형
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950055719A priority Critical patent/KR970052832A/en
Publication of KR970052832A publication Critical patent/KR970052832A/en

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Abstract

막 형성과 관련된 반도체소자 제조설비의 운영방법이 개시되어 있다.A method of operating a semiconductor device manufacturing facility related to film formation is disclosed.

본 발명은 공정의 제어대상인 막두께에 대한 목표치를 설정하는 단계, 목표치를 이루기에 적합한 설비의 공정 변수들을 특정값으로 설정하는 단계, 상기 공정 변수값에 따라 공정을 진행하는 단계, 상기 공정에 따라 형성된 막 두께를 계측하는 단계 및 상기 목표치와 게측값을 비교하여 상기 목표치와 상기 계측값이 같다면 상기 설비의 공정 변수들의 조정이 없이 계속 공정을 진행하고, 목표치와 계측값이 서로 다른 경우,그 차이를 추출하여 설비에 새로운 공정 변수값을 설정하고, 변화된 공정 변수값에 의해 공정을 다시 진행하는 단계를 구비하여 이루어지는 막 형성 관련 반도체소자 제조설비 운영방법에 있어서, 상기 목표치와 상기 계측값의 비교 및 상기 새로운 공정 변수값의 설정이 자동두께조절장치에 의해 이루어지는 것을 특징으로 한다.The present invention comprises the steps of setting a target value for the film thickness to be controlled of the process, setting the process parameters of the equipment suitable for achieving the target value to a specific value, proceeding the process according to the process variable value, according to the process Measuring the formed film thickness and comparing the target value with the measured value, and if the target value and the measured value are the same, the process is continued without adjusting the process variables of the facility, and if the target value and the measured value are different from each other, A method for operating a film forming semiconductor device manufacturing facility comprising extracting a difference, setting a new process variable value in a facility, and then proceeding the process again with the changed process variable value, wherein the target value is compared with the measured value. And setting the new process variable value by means of an automatic thickness control device.

따라서, 일정한 조절기준에 따라 공정을 진행하는 설비의 공정 변수값을 자동적으로 조정하므로 인력을 절감하고 웨이퍼상에 일정한 두께의 막을 형성하는 효과를 가진다.Therefore, it automatically adjusts the process variable value of the equipment that proceeds the process according to a certain control criteria has the effect of reducing the manpower and forming a film of a constant thickness on the wafer.

선택도 : 제2도Selectivity: Second degree

Description

막 형성과 관련된 반도체소자 제조설비의 운영방법.Method of operating semiconductor device manufacturing equipment related to film formation.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 일 실시예에 따른 막 형성 관련 반도체소자 제조설비의 운영방법을 나타낸 흐름도이다.2 is a flowchart illustrating a method of operating a film forming related semiconductor device manufacturing apparatus according to an exemplary embodiment of the present invention.

Claims (2)

공정의 제어대상인 막두께에 대한 목표치를 설정하는 단계, 상기 목표치를 이루기에 적합한 설비의 공정 변수들을 특정값으로 설정하는 단계, 설정된 공정 변수값에 따라 공정을 진행하는 단계, 상기 공정에 따라 형성된 막 두께를 계측하는 단계 및 상기 목표치와 막 두께의 계측값을 비교하여 상기 목표치와 상기 계측값이 같다면 상기 설비의 공정 변수들의 조정이 없이 계속 공정을 진행하고, 상기 목표치와 상기 계측값이 서로 다른 경우,그 차이를 추출하여 상기 설비에 새로운 공정 변수값을 설정하고, 상기 새로운 공정 변수값에 의해 상기 공정을 다시 진행하는 단계를 구비하여 이루어지는 막 형성 관련 반도체소자 제조설비 운영방법에 있어서, 상기 목표치와 상기 계측값의 비교 및 상기 새로운 공정 변수값의 설정이 자동두께조절장치에 의해 이루어지는 것을 특징으로 하는 막 형성과 관련된 반도체소자 제조설비의 운영방법.Setting a target value for the film thickness to be controlled of the process, setting process variables of equipment suitable for achieving the target value to a specific value, proceeding the process according to the set process variable value, a film formed according to the process Measuring the thickness and comparing the measured value between the target value and the film thickness, and if the target value and the measured value are the same, the process is continued without adjusting the process variables of the facility, and the target value and the measured value are different from each other. In this case, the method comprising the steps of extracting the difference to set a new process variable value in the equipment, and proceeding the process again by the new process variable value, the method of operating a semiconductor device manufacturing equipment related to film formation, the target value And the comparison of the measured values and the setting of the new process variable value by means of an automatic thickness control device. A method of operating a semiconductor device manufacturing facility related to film formation, characterized in that formed. 제1항에 있어서, 상기 설비에 새로운 공정 변수값을 설정하는 방법으로 현재의 공정 변수값을 읽고 상기 목표치와 상기 계측값의 비교로 요망변화량을 산출하여 상기 현재의 공정 변수값에서 상기 요망변화량만큼 변화시키는 방법을 사용하는 것을 특징으로 하는 막 형성과 관련된 반도체소자 제조설비의 운영방법.The method according to claim 1, wherein a current change value is calculated by setting a new process variable value in the facility, and a desired change amount is calculated by comparing the target value with the measured value. A method of operating a semiconductor device manufacturing facility related to film formation, characterized by using a method of changing. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950055719A 1995-12-23 1995-12-23 Operation method of semiconductor device manufacturing equipment related to film formation KR970052832A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950055719A KR970052832A (en) 1995-12-23 1995-12-23 Operation method of semiconductor device manufacturing equipment related to film formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950055719A KR970052832A (en) 1995-12-23 1995-12-23 Operation method of semiconductor device manufacturing equipment related to film formation

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KR970052832A true KR970052832A (en) 1997-07-29

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100474226B1 (en) * 2001-03-30 2005-03-08 가부시끼가이샤 도시바 Method and apparatus for manufacturing semiconductor device, control method and control apparatus therefor, and simulation method and simulation apparatus of manufacturing process of semiconductor device
CN115697027A (en) * 2022-10-20 2023-02-03 合肥本源量子计算科技有限责任公司 Preparation method of Josephson junction, quantum circuit and quantum chip

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100474226B1 (en) * 2001-03-30 2005-03-08 가부시끼가이샤 도시바 Method and apparatus for manufacturing semiconductor device, control method and control apparatus therefor, and simulation method and simulation apparatus of manufacturing process of semiconductor device
CN115697027A (en) * 2022-10-20 2023-02-03 合肥本源量子计算科技有限责任公司 Preparation method of Josephson junction, quantum circuit and quantum chip
CN115697027B (en) * 2022-10-20 2024-05-07 本源量子计算科技（合肥）股份有限公司 Preparation method of Josephson junction, quantum circuit and quantum chip

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