KR970052811A - Method of forming interlayer insulating film of semiconductor device - Google Patents

Method of forming interlayer insulating film of semiconductor device Download PDF

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Publication number
KR970052811A
KR970052811A KR1019950050952A KR19950050952A KR970052811A KR 970052811 A KR970052811 A KR 970052811A KR 1019950050952 A KR1019950050952 A KR 1019950050952A KR 19950050952 A KR19950050952 A KR 19950050952A KR 970052811 A KR970052811 A KR 970052811A
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KR
South Korea
Prior art keywords
film
sog
forming
semiconductor device
oxide film
Prior art date
Application number
KR1019950050952A
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Korean (ko)
Inventor
손기근
전상호
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950050952A priority Critical patent/KR970052811A/en
Publication of KR970052811A publication Critical patent/KR970052811A/en

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  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체 소자의 층간절연막 형성방법에 관한 것으로, SOG막과 산화막간의 접착력을 개선시키기 위한 것이다.The present invention relates to a method for forming an interlayer insulating film of a semiconductor device, and to improve the adhesion between the SOG film and the oxide film.

이를 위해 본 발명은 기판상에 제1층간산화막을 형성하는 단계와, 상기 제1층간산화막상에 SOG를 도포하는 단계, 상기 SOG막에 낮은 에너지로 적은 양의 이온을 주입하여 그 표면을 비정질화시키는 단계, 상기 SOG막을 경화시키는 단계, 및 상기 SOG막위에 제2층간산화막을 형성하는 단계를 포함하여 이루어지는 반도체 소자의 층간절연막 형성방법을 제공한다.To this end, the present invention comprises the steps of forming a first interlayer oxide film on a substrate, applying SOG on the first interlayer oxide film, and implanting a small amount of ions at low energy into the SOG film to amorphous the surface thereof. It provides a method of forming an interlayer dielectric film of a semiconductor device comprising the step of, curing the SOG film, and forming a second interlayer oxide film on the SOG film.

Description

반도체 소자의 층간절연막 형성방법.A method of forming an interlayer insulating film of a semiconductor device.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3E도는 본 발명에 의한 층간절연막 형성방법을 도시한 공정순서도이다.3E is a process flow chart showing a method for forming an interlayer insulating film according to the present invention.

Claims (5)

기판상에 제1층간산화막을 형성하는 단계와, 상기 제1층간산화막상에 SOG를 도포하는 단계, 상기 SOG막에 낮은 에너지로 적은 양의 이온을 주입하여 그 표면을 비정질화시키는 단계, 상기 SOG막을 경화시키는 단계, 및 상기 SOG막위에 제2층간산화막을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 층간절연막 형성방법.Forming a first interlayer oxide film on a substrate, applying SOG on the first interlayer oxide film, implanting a small amount of ions into the SOG film at low energy, and amorphous the surface thereof, the SOG film And hardening, and forming a second interlayer oxide film on said SOG film. 제1항에 있어서, 상기 SOG를 도포하는 단계후에 도포장치내에서 소프트 베이크하여 어느 정도 경화시키는 단계가 더 포함되는 것을 특징으로 하는 반도체 소자의 층간절연막 형성방법.2. The method of claim 1, further comprising soft baking in the coating apparatus after the step of applying the SOG to harden it to some extent. 제1항에 있어서, 상기 이온주입단계는 10-40KeV정도의 에너지로 E12-9E14정도의 Ar이온을 주입하는 공정으로 이루어지는 것을 특징으로 하는 반도체 소자의 층간절연막 형성방법.The method of claim 1, wherein the ion implantation step comprises implanting Ar ions of about E12-9E14 with energy of about 10-40 KeV. 제3항에 있어서, 상기 이온주입에 의해 상기 SOG막 표면에 200-300Å정도 두께의 비정질층이 형성되는 것을 특징으로 하는 반도체 소자의 층간절연막 형성방법.4. The method for forming an interlayer insulating film of a semiconductor device according to claim 3, wherein an amorphous layer having a thickness of about 200 to 300 mW is formed on the surface of the SOG film by the ion injection. 제1항에 있어서, 상기 SOG막을 경화시키는 단계에서 상기 비정질화된 SOG막의 표면층의 원자 재배열이 이루어지는 것을 특징으로 하는 반도체 소자의 층간절연막 형성방법.The method of claim 1, wherein in the step of curing the SOG film, atomic rearrangement of the surface layer of the amorphous SOG film is performed. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950050952A 1995-12-16 1995-12-16 Method of forming interlayer insulating film of semiconductor device KR970052811A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950050952A KR970052811A (en) 1995-12-16 1995-12-16 Method of forming interlayer insulating film of semiconductor device

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Application Number Priority Date Filing Date Title
KR1019950050952A KR970052811A (en) 1995-12-16 1995-12-16 Method of forming interlayer insulating film of semiconductor device

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KR970052811A true KR970052811A (en) 1997-07-29

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100272567B1 (en) * 1997-12-31 2000-11-15 서평원 Mobile Internet in Mobile Communication Network

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100272567B1 (en) * 1997-12-31 2000-11-15 서평원 Mobile Internet in Mobile Communication Network

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