KR970052811A - Method of forming interlayer insulating film of semiconductor device - Google Patents
Method of forming interlayer insulating film of semiconductor device Download PDFInfo
- Publication number
- KR970052811A KR970052811A KR1019950050952A KR19950050952A KR970052811A KR 970052811 A KR970052811 A KR 970052811A KR 1019950050952 A KR1019950050952 A KR 1019950050952A KR 19950050952 A KR19950050952 A KR 19950050952A KR 970052811 A KR970052811 A KR 970052811A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- sog
- forming
- semiconductor device
- oxide film
- Prior art date
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체 소자의 층간절연막 형성방법에 관한 것으로, SOG막과 산화막간의 접착력을 개선시키기 위한 것이다.The present invention relates to a method for forming an interlayer insulating film of a semiconductor device, and to improve the adhesion between the SOG film and the oxide film.
이를 위해 본 발명은 기판상에 제1층간산화막을 형성하는 단계와, 상기 제1층간산화막상에 SOG를 도포하는 단계, 상기 SOG막에 낮은 에너지로 적은 양의 이온을 주입하여 그 표면을 비정질화시키는 단계, 상기 SOG막을 경화시키는 단계, 및 상기 SOG막위에 제2층간산화막을 형성하는 단계를 포함하여 이루어지는 반도체 소자의 층간절연막 형성방법을 제공한다.To this end, the present invention comprises the steps of forming a first interlayer oxide film on a substrate, applying SOG on the first interlayer oxide film, and implanting a small amount of ions at low energy into the SOG film to amorphous the surface thereof. It provides a method of forming an interlayer dielectric film of a semiconductor device comprising the step of, curing the SOG film, and forming a second interlayer oxide film on the SOG film.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제3E도는 본 발명에 의한 층간절연막 형성방법을 도시한 공정순서도이다.3E is a process flow chart showing a method for forming an interlayer insulating film according to the present invention.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950050952A KR970052811A (en) | 1995-12-16 | 1995-12-16 | Method of forming interlayer insulating film of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950050952A KR970052811A (en) | 1995-12-16 | 1995-12-16 | Method of forming interlayer insulating film of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970052811A true KR970052811A (en) | 1997-07-29 |
Family
ID=66594221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950050952A KR970052811A (en) | 1995-12-16 | 1995-12-16 | Method of forming interlayer insulating film of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970052811A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100272567B1 (en) * | 1997-12-31 | 2000-11-15 | 서평원 | Mobile Internet in Mobile Communication Network |
-
1995
- 1995-12-16 KR KR1019950050952A patent/KR970052811A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100272567B1 (en) * | 1997-12-31 | 2000-11-15 | 서평원 | Mobile Internet in Mobile Communication Network |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3873002D1 (en) | METHOD FOR PRODUCING A MESFET WITH A SELF-ADJUSTED GATE. | |
EP0824268A3 (en) | Method of fabricating a gate oxide layer | |
KR960019649A (en) | Manufacturing Method of Semiconductor Device | |
KR970052811A (en) | Method of forming interlayer insulating film of semiconductor device | |
ATE152289T1 (en) | METHOD FOR THE PRODUCTION AND PASSIVATION OF SEMICONDUCTOR COMPONENTS | |
KR970003838B1 (en) | Fabrication method of ldd mosfet | |
KR940020581A (en) | Bipolar Device Manufacturing Method | |
EP0899780A3 (en) | Method for forming insulating thin films | |
KR970008427A (en) | Gate oxide film formation method of semiconductor device | |
KR970067622A (en) | Manufacturing method of self-matching doping semiconductor device | |
KR960009015A (en) | Gate electrode formation method of semiconductor device | |
KR940016910A (en) | Manufacturing method of thin film transistor with improved staff coverage | |
KR950026037A (en) | Thin film transistor | |
TW270238B (en) | Through split poly coding method | |
KR940003091A (en) | Manufacturing Method of Thin Film Field Transistor | |
KR970053540A (en) | Method for manufacturing metal wiring of semiconductor device | |
KR940016875A (en) | Manufacturing method of high load resistor of semiconductor device | |
TW352478B (en) | Method for fabricating low current leak MOSFET | |
KR970003675A (en) | Semiconductor device and manufacturing method thereof | |
KR970052509A (en) | Metal wiring method of semiconductor device | |
KR960026263A (en) | Metal layer formation method of semiconductor device | |
KR970013121A (en) | Thin Film Transistor Manufacturing Method | |
KR940016593A (en) | Method of suppressing hydrogen penetration into silicon oxide film | |
KR910019255A (en) | Formation method of L.D.D using polyslow profile | |
KR970030535A (en) | Bonding pad formation method of semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |