KR970005159B1 - Equipment of manufacturing thin fim - Google Patents
Equipment of manufacturing thin fim Download PDFInfo
- Publication number
- KR970005159B1 KR970005159B1 KR1019930017295A KR930017295A KR970005159B1 KR 970005159 B1 KR970005159 B1 KR 970005159B1 KR 1019930017295 A KR1019930017295 A KR 1019930017295A KR 930017295 A KR930017295 A KR 930017295A KR 970005159 B1 KR970005159 B1 KR 970005159B1
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- target
- manufacturing apparatus
- excimer laser
- laser
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 230000003287 optical effect Effects 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000010453 quartz Substances 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000013077 target material Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 abstract description 2
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 abstract 1
- 239000002887 superconductor Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
제1도는 본 발명에 의한 엑시머레이저를 이용한 박막제조장치의 구성도.1 is a block diagram of a thin film manufacturing apparatus using an excimer laser according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
A : 엑시머레이저부 B : 광학기기부A: excimer laser part B: optical instrument part
C : 진공챔버부 1 : 엑시머레이저C: vacuum chamber 1: excimer laser
2 : 가스캐비넷 3 : 광학용 테이블2: gas cabinet 3: optical table
4 : 빔구멍 5 : 거울4: beam hole 5: mirror
6 : 렌즈 7 : 레이저빔6: lens 7: laser beam
8 : 진공챔버 9 : 진공펌프8: vacuum chamber 9: vacuum pump
10 : 타겟조절장치 11 : 산소공급장치10: target control device 11: oxygen supply device
12 : 히터 13 : 기판12 heater 13 substrate
14 : 타겟 15 : 석영윈도우14: target 15: quartz window
본 발명은 산화물 고온 초전도체 박막제조에 관한 것으로, 특히 엑시머레이저(Eximer laser)를 이용하여 우수한 특성의 YBa2Cu3O7박막을 제조할 수 있는 박막제조장치에 관한 것이다.The present invention relates to the production of oxide high temperature superconductor thin film, and more particularly, to a thin film manufacturing apparatus capable of producing a YBa 2 Cu 3 O 7 thin film of excellent characteristics using an excimer laser (Eximer laser).
산화물 고온 초전도체, 특히 YB2aCu3O7제작하는 종래의 방법으로는 스퍼터링 방법, 열증착법, 전자빔 증착법등이 있다.Conventional methods for producing oxide high temperature superconductors, particularly YB 2 aCu 3 O 7 , include sputtering, thermal evaporation, and electron beam evaporation.
스퍼터링 방법은 이온화된 기체분자를 가속시켜 증착시키고자 하는 물질(타겟)에 충돌시켜 운동량을 교환시킴에 따라 튀어나온 입자를 기판위에 증착하는 방법이고, 열증착법이나 전자빔 증착법은 각각 저항가열이나 전자빔에 의한 가열에 의해 증착하고자 하는 물질(타겟)을 응용, 증발시켜 기판에 증착하는 방법이다.Sputtering is a method of depositing protruding particles on a substrate by exchanging momentum by colliding with ionized gas molecules to accelerate the deposition of the ionized gas molecules. Thermal evaporation or electron beam evaporation method is used for resistive heating or electron beam deposition. It is a method of depositing on a substrate by applying and evaporating a material (target) to be deposited by heating.
산화물 고온 초전도체 박막을 제작할때는 많은 양의 반응성가스로서 산소를 필요로 하는데 이 산소가 부족하게 되면 초전도 특성이 상실되거나 매우 나빠지게 된다.Oxide The high-temperature superconductor thin film requires oxygen as a large amount of reactive gas, and when this oxygen is insufficient, superconducting properties are lost or become very bad.
상기한 스퍼터링방법, 열증착법, 전자빔에 의한 증착법등은 아주 낮은 압력(수 mTorr∼수십 mTorr)하에서 박막제조가 이루어지고 이 압력 이상에서는 플라즈마 반응을 일으키는 것이 불가능하기 때문에 반응성가스인 산소가 매우 부족하게 되어 초전도 특성이 나쁘게 된다.In the sputtering method, thermal evaporation method, and electron beam evaporation method, the thin film is manufactured under a very low pressure (several mTorr to several tens mTorr), and it is impossible to generate a plasma reaction above this pressure. This results in poor superconductivity.
또한 산화물 고온 초전도체, 특히 YBa2Cu3O7은 여러 가지 원소로 이루어져 있고 많은 산소양을 포함하고 있는 화합물로서 원소의 구성비가 매우 중요하다.In addition, oxide high temperature superconductor, especially YBa 2 Cu 3 O 7 is composed of various elements and contains a large amount of oxygen, the composition ratio of the elements is very important.
그러나 상술한 증착방법에 의해 형성할 경우, 물리적, 화학적 특성상 많은 산소량을 필요로 하나, 타겟의 조성비가 반응가스인 산소유입양의 부족으로 그대로 박막의 조성비로 되지 않는 문제점으로 인하여 초전도 특성이 또한 스퍼터링 방법의 경우 증착율이 매우 나쁠 뿐 아니라 여러 가지 복잡한 요인에 의해 재현성이 좋지 않은 문제가 있다.However, when formed by the above-described deposition method, a large amount of oxygen is required in terms of physical and chemical properties, but the superconducting property is also sputtered due to the problem that the composition ratio of the target does not become the composition ratio of the thin film as it is due to the lack of oxygen inflow amount, which is the reaction gas. In the case of the method, not only the deposition rate is very bad but also the problem of poor reproducibility due to various complicated factors.
본 발명은 상술한 문제점을 해결하기 위한 것으로, 엑시머레이저를 이용하여 전기적 특성이 우수하고 치밀한 미세구조를 가지며 제조시의 재현성 및 증착율이 높은 산화물 고온 초전도체를 제조할 수 있는 박막 제조장치를 제공하는데 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and provides a thin film manufacturing apparatus capable of manufacturing an oxide high temperature superconductor having excellent electrical properties, a dense microstructure, and high reproducibility and high deposition rate in manufacturing using an excimer laser. There is a purpose.
상기 목적을 달성하기 위해 본 발명이 박막제조장치는 광원인 엑시머레이저부(A)와, 상기 광원으로부터 나온 레이저짐을 타겟까지 전달하는 광학부 및 상기 광학부에 의해 전달된 레이저빔을 이용하여 타겟의 물질의 기판상에 증착시키는 진공챔버부로 구성된 것을 특징으로 한다.In order to achieve the above object, the present invention provides a thin film manufacturing apparatus using an excimer laser unit A, which is a light source, an optical unit which transmits the laser load from the light source, and a laser beam transmitted by the optical unit. And a vacuum chamber portion for depositing on a substrate of material.
이하 첨부된 도면을 참조하여 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
제1도에 본 발명의 엑시머레이저를 이용한 박막제조장치를 도시하였다.1 shows a thin film manufacturing apparatus using the excimer laser of the present invention.
본 발명의 제조장치는 크게 엑시머레이저부(A)와 광학기기부(B) 및 진공챔버부(C)로 구성되어 있다.The manufacturing apparatus of the present invention is largely composed of an excimer laser portion A, an optical device portion B, and a vacuum chamber portion C.
먼저, 엑시머레이저부(A)는 엑시머레이저(1), 가스캐비넛(Gas Cabinet)(2), 광학용테이블(3)로 이루어져 있다.First, the excimer laser unit A includes an excimer laser 1, a gas cabinet 2, and an optical table 3.
엑시머레이즈(1)는 KrF가스를 사용하는 펄스레이저로 빛의 파자은 248mm이다.The excimer laser 1 is a pulse laser using KrF gas, and the light wave is 248 mm.
이 엑시머레이저가 진공챔버(8)내에 있는 타겟(14)에 조사되면 타겟으로부터 플라즈마가 형성되면서 강한 에너지를 갖는 입자들이 튀어나와 히터(12)에 의해 가열된 기판(13)에 증착되어 박막이 형성되게 된다.When the excimer laser is irradiated to the target 14 in the vacuum chamber 8, plasma is formed from the target, and particles having strong energy stick out and are deposited on the substrate 13 heated by the heater 12 to form a thin film. Will be.
이때, 타겟(14)과 기판(13)은 평행하게 마주보고 있으며, 엑시머레이저 빔(7)은 타겟 표면에 45°로 입사되어야 한다.In this case, the target 14 and the substrate 13 face in parallel, and the excimer laser beam 7 must be incident at 45 ° on the target surface.
다음에, 광학기기부(B)는 빔구멍(aperture)(4), 거울(mirror)(5), 렌즈(6) 등으로 이루어진다.Next, the optical device portion B is composed of a beam aperture 4, a mirror 5, a lens 6, and the like.
빔구멍(4)은 엑시머레이저로부터 나온 빔(7)을 깨끗한 부분만 잘라 쓸 수 있으며 원하는 에너지 크기만을 타겟으로 보낼 수 있다.The beam hole 4 can cut out the clean portion of the beam 7 from the excimer laser and send only the desired energy size to the target.
거울(5)과 렌즈(6)는 상기 빔구멍(4)을 통과한 빔을 포커싱(focusing)하여 에너지 밀도를 높이기 위한 것으로서, 이때 포커싱 방법으로는 이미징 테크닉(Imaging Technique)을 사용한다.The mirror 5 and the lens 6 are for focusing the beam passing through the beam hole 4 to increase the energy density. In this case, an imaging technique is used as the focusing method.
상기한 이미징 테크닉이란 빔구멍에서 렌즈까지의 경로길이를 a라 하고 렌즈에서 타겟표면까지의 길이를 b라고 하고 초점을 f라고 했을때*****이 되도록 하는 것을, 빔은*****만큼 포커싱이 되며 이것의 역인*****만큼 에너지 밀도가 증가하고, 또한 타겟 표면에 빔구멍모양의 실상이 맺히게 함으로써 일정한 크기를 갖는 빔만이 타겟에 조사되게 하는 것이다.The imaging technique described above means that the path length from the beam hole to the lens is a, the length from the lens to the target surface is b and the focus is f. Focusing by * and vice versa ***** increases the energy density, and also makes a beamhole shape on the target surface, so that only a beam having a constant size is irradiated to the target.
다음에 진공챔버부(c)는 진공펌프(9), 히터(12), 타겟조절장치(10), 석영윈도우(Quartz Window)(15), 산소 공급장치(11) 등으로 이루어져 있다.Next, the vacuum chamber part c is composed of a vacuum pump 9, a heater 12, a target control device 10, a quartz window 15, an oxygen supply device 11, and the like.
진공펌프(9)로는 터보펌프(Turbo Pump)를 사용하여 진공도를 10-7torr까지할 수 있게 하였으며, 진공펌프와 진공챔버 사이에 게이트밸브를 설치하여 산소의 유량을 조절할 수 있도록 하였다.As a vacuum pump (9) using a turbo pump (Turbo Pump) was able to achieve a vacuum degree of 10 -7 torr, and a gate valve was installed between the vacuum pump and the vacuum chamber to control the flow rate of oxygen.
히터(12)는 박막증착중에 기판(13)을 가열시켜 산화물 고온 초전도체를 인시류(inp-Situ; 증착후 별도의 열처리 없이 박막이 증착되면서 결정상을 형성시키는 것)로 제작하기 위한 것으로, YBa2Cu3O7박막 제조시 700-800℃까지 가열한다.Heater 12 is flow recognize an oxide high temperature superconductor by heating the substrate 13 during film deposition; as for producing a (inp-Situ it to form a crystal phase as a thin film is deposited after the deposition without any heat treatment), YBa 2 In the preparation of a Cu 3 O 7 thin film it is heated to 700-800 ℃.
타겟조절장치(10)는 타겟을 자전시켜 타겟을 보다 넓사용할 수 있도록 함과 동시에 과열되는 것을 방지하고 여러종류의 타겟을 동시에 장착시켜 공전할 수 있도록 함으로써 진공상태를 유지하면서 여러종류의 박막을 다층으로 증착할 수 있도록 한다.The target adjusting device 10 rotates the target to make the target more widely used, and at the same time prevents overheating and mounts several kinds of targets at the same time to revolve, thereby maintaining multiple vacuum layers while maintaining a vacuum state. To be deposited.
석영윈도우(15)는 광학기기를 통과한 빔을 진공챔버내의 타겟으로 보낼 수 있도록 한 것으로, 빔의 손실을 막기 위해 자외선용 석영을 사용한다.The quartz window 15 allows the beam that has passed through the optical device to be sent to the target in the vacuum chamber, and uses quartz for ultraviolet rays to prevent the beam from being lost.
산소공급장치(11)는 자동입력 조절장치와 MFC(mass flow meter)를 사용할 수 있도록 한 것으로, 빔의 손실을 막기 위해 자외선용 석영을 사용한다.Oxygen supply device 11 is to enable the automatic input control device and MFC (mass flow meter), using ultraviolet quartz to prevent the loss of the beam.
산소공급장치(11)는 자동입력 조절장치와 MFC(mass flow meter)를 사용하여 일정한 압력이 유지되도록하며, 가스의 유량은 게이트밸브를 이용하여 일정하게 한다.The oxygen supply device 11 maintains a constant pressure by using an automatic input control device and a mass flow meter (MFC), and the flow rate of gas is made constant by using a gate valve.
상기 본 발명의 박막제조장치를 이용하여 기판온도 700-800℃, 산소기압 100-500, 산소유량 20-30Sccm, 타겟과 기판사이의 거리 4-9cm의 제조조건하에서 제조된 산화물 고온 초전도체 YBa2Cu3O7박막의 특성은 임계온도 : 90-92K, 임계전류밀도 : 3-5×106A/cm2,박막의 결정성: 기판의 수직방향으로 YBa2Cu3O7의 C축이 엑피택시성장으로 나타났다.Oxide high temperature superconductor YBa 2 Cu prepared under the manufacturing conditions of substrate temperature 700-800 ° C., oxygen pressure 100-500, oxygen flow rate 20-30 Sccm, distance 4-9 cm between target and substrate using thin film manufacturing apparatus of the present invention. The characteristics of 3 O 7 thin film are: critical temperature: 90-92K, critical current density: 3-5 × 10 6 A / cm 2 , crystallinity of thin film: C-axis of YBa 2 Cu 3 O 7 in the vertical direction of substrate Taxi growth.
또한 형성된 박막의 미세구조는 매우 조밀하였고 YBa2Cu3O7의 증착율은 200-500Å/min으로 높았다.In addition, the microstructure of the formed thin film was very dense and the deposition rate of YBa 2 Cu 3 O 7 was as high as 200-500 Å / min.
이상과 같이 본 발명에 의하면, 엑시머레이저를 이용한 박막제조장치를 사용함으로써, 진공챔버 내의 산소압력을 100∼500mTorr로 높여도 챔버내에서의 플라즈마 반응을 일으키는데에는 문제가 없으므로 많은 산소유입량을 필요로 하는 YBa2Cu3O7와 같은 산화물 고온 초전도체 박막제조시에 산소유입량을 증가시켜서 박막의 산소조성비를 극히 용이하게 맞출 수 있게 되어 전기적 특성이 우수하고 치밀한 미세구조를 가지며 표면상태가 고르고 제조시의 재현성과 증착율이 향상된 산화물 고온 초전도체를 얻는 것이 강유전체 박막 등 각종 박막의 제조에 이용하는 것도 가능함은 물론이다.As described above, according to the present invention, even if the oxygen pressure in the vacuum chamber is increased to 100 to 500 mTorr by using a thin film manufacturing apparatus using an excimer laser, there is no problem in causing a plasma reaction in the chamber, which requires a large amount of oxygen inflow. Oxygen inflow rate increases during the production of oxide high temperature superconductor thin film such as YBa 2 Cu 3 O 7 , making it very easy to match the oxygen composition ratio of the thin film. It is, of course, possible to obtain an oxide high temperature superconductor having an improved deposition rate and to produce various thin films such as ferroelectric thin films.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930017295A KR970005159B1 (en) | 1993-08-31 | 1993-08-31 | Equipment of manufacturing thin fim |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930017295A KR970005159B1 (en) | 1993-08-31 | 1993-08-31 | Equipment of manufacturing thin fim |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950006977A KR950006977A (en) | 1995-03-21 |
| KR970005159B1 true KR970005159B1 (en) | 1997-04-12 |
Family
ID=19362544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930017295A KR970005159B1 (en) | 1993-08-31 | 1993-08-31 | Equipment of manufacturing thin fim |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970005159B1 (en) |
-
1993
- 1993-08-31 KR KR1019930017295A patent/KR970005159B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR950006977A (en) | 1995-03-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2757284B2 (en) | Method for producing metal oxide superconducting material layer by laser evaporation | |
| Sanchez et al. | Preparation of SrTiO3 thin films on Si (100) substrates by laser ablation: Application as buffer layer for YBa2Cu3O7 films | |
| US5196101A (en) | Deposition of thin films of multicomponent materials | |
| CA2135125A1 (en) | Film depositing apparatus and process for preparing layered structure including oxide superconductor thin film | |
| JPH05208895A (en) | Production of thin film of perovskite material | |
| KR970005159B1 (en) | Equipment of manufacturing thin fim | |
| US5538767A (en) | Method for growing transparent conductive GaInO3 films by pulsed laser deposition | |
| Liao et al. | Growth of beta barium borate (β-BaB2O4) thin films for nonlinear optical applications | |
| Reade et al. | Ion‐assisted pulsed‐laser deposition | |
| JP2945968B2 (en) | Method for forming transparent conductive thin film | |
| EP0486054B1 (en) | Process for preparing a superconducting thin oxide film | |
| JPH0347959A (en) | Thin organic superconducting film | |
| JP3465041B2 (en) | YAG fifth harmonic pulse laser vapor deposition method and apparatus | |
| Wasa | Sputter deposition technology as a materials engineering | |
| Ressler et al. | The development of biaxial alignment in yttria-stabilized zirconia films fabricated by ion beam assisted deposition | |
| KR100233838B1 (en) | Manufacturing method of a-axis oriented high tc superconducting thin film | |
| KR970009739B1 (en) | Method of manufacture for superconductor thin film | |
| JPH01177367A (en) | Film forming device using laser beam or intensive light | |
| US4950644A (en) | Method for the epitaxial preparation of a layer of a metal-oxide superconducting material with a high transition temperature | |
| KR100393184B1 (en) | Apparatus for fabricating a high-tc superconducting film using pulsed laser deposition and method thereof | |
| Sreenivas | Ferroelectric thin film processing | |
| JPH02149402A (en) | Process and device for preparing oxide superconductor | |
| Petersen et al. | Excimer laser deposition of highly oriented PLZT thin films | |
| JPH06279180A (en) | Production of crystal thin film | |
| Ren et al. | Preparation of high J c YBa 2 Cu 3 O 7− δ superconducting thin films by ion beam sputtering deposition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20050607 Year of fee payment: 9 |
|
| LAPS | Lapse due to unpaid annual fee |