KR950000412A - 레이저-상형성성 인쇄판 및 그의 제조방법 - Google Patents

레이저-상형성성 인쇄판 및 그의 제조방법 Download PDF

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Publication number
KR950000412A
KR950000412A KR1019940009633A KR19940009633A KR950000412A KR 950000412 A KR950000412 A KR 950000412A KR 1019940009633 A KR1019940009633 A KR 1019940009633A KR 19940009633 A KR19940009633 A KR 19940009633A KR 950000412 A KR950000412 A KR 950000412A
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South Korea
Prior art keywords
dopant
laser
image forming
absorber
predetermined wavelength
Prior art date
Application number
KR1019940009633A
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English (en)
Inventor
더블유. 양 마이클
에스. 칸가 러스톰
브이. 랜달 앨빈
Original Assignee
스티븐. 티. 트렁커
더블유. 알. 그레이스 앤드 컴패니-콘.
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Application filed by 스티븐. 티. 트렁커, 더블유. 알. 그레이스 앤드 컴패니-콘. filed Critical 스티븐. 티. 트렁커
Publication of KR950000412A publication Critical patent/KR950000412A/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Printing Plates And Materials Therefor (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
  • Materials For Photolithography (AREA)
  • Silver Salt Photography Or Processing Solution Therefor (AREA)

Abstract

레이저 상형성성 플랙소그래피 인쇄판 및 이를 제조하기 위한 방법이 기재되어있다. UV흡수재가 도핑된 중합체 박막을 광중합체층에 적층시킨다. 소정의 파장에서 작용하는 레이저를 이용하여 광중합체로 부터 막을 융식시켜 그 자리에서 네가티브를 생성한다. 생성한 네가티브를 전형적으로 UV투광노출시키고 현상시킨다.

Description

레이저-상형성성 인쇄판 및 그의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (15)

  1. 중합체 매트릭스 및 300 내지 400nm범위에서 높은 흡광계수를 갖는 도펀트를 포함하고, 도펀트의 광표백 및 중합체 매트릭스의 광융식에 의해 선정된 파장에서 복사선의 한계 조사량에 대응하는 광경화성 물품용 보호층.
  2. 제1항에 있어서, 도펀트가 2,2´,4,4´-테트라히드록시벤조페논, 2,2´-디히드록시-4,4´-디메톡시벤조페논, 4-페닐아조페놀 또는 이들의 혼합물인 보호층.
  3. 제1항에 있어서, 선정된 파장이 351nm인 보호층.
  4. a)지지층; b)300 내지 400nm범위중의 소정 파장에서 복사선 흡수가 낮고 소정 파장에서 활성인 개시제를 갖는 광경화성층; c)윤활막중에 중합체 매트릭스 및 300 내지 400nm 범위에서 높은 흡광계수를 갖는 도펀트를 포함하고 광융식될 수 있는 UV복사선 흡수층을 포함하는 레이저 상형성성 물품.
  5. 제4항에 있어서, 도펀트가 2,2´,4,4´-테트라히드록시벤조페논, 2,2´-디히드록시-4,4´-디메톡시벤조페논 또는 4-페닐아조페놀인 레이저 상형성성 물품.
  6. 제4항에 있어서, 선정된 파장이 351nm인 레이저 상형성성 물품.
  7. 제4항에 있어서, 중합성 매트릭스가 폴리아세탈, 폴리아크릴, 폴리아미드, 폴리이미드, 셀룰로오스계 유도체 중합체, 폴리부틸렌, 폴리카르보네이트, 폴리에스테르, 폴리에틸렌, 폴리페닐렌 에테르, 및 폴리페닐렌 옥사이드로 구성된 군으로 부터 선정된 레이저 상형성성 물품.
  8. 제4항에 있어서, 광경화성 조성물이 아크릴레이드 폴리우레탄, 산-변형된 아크릴레이트 폴리우레탄, 아민-변형된 폴리우렌탄을 비롯한 폴리우레탄, 아클릴로니트릴 고무를 비롯한 고무, 및 스티렌-이소프렌 및 스티렌-부타디엔으로 제조된 이-또는 삼블록 공중합체로 구성된 군으로 부터 선정된 광중합체를 포함하는 레이저 상형성성 물품.
  9. 제8항에 있어서, 광경화성 조성물이 아민-변형된 아크릴레이트 폴리우레탄 또는 스티렌-이소프렌이-또는 삼블록 공중합체 또는 아클릴로니트릴 고무인 광중합체를 포함하는 레이저 상형성성 물품.
  10. 고형의 미경화 인쇄판을 UV흡수제를 사용하여 변형시키고; UV흡수제를 레이저를 사용하여 융식시켜 융식된 영역과 융식되지 않은 영역을 제공하고; UV광에 인쇄판을 노출시켜 융식된 영역에서 판을 경화시키고; 판을 현상시키는 단계를 포함하는 레이저 상형성된 인쇄판의 제조방법.
  11. 제10항에 있어서, UV흡수제가 중합성 매트릭스 및 특정 범위의 UV광에서 높은 흡광계수를 갖는 도펀트를 포함하고 도펀트의 광표백 및 중합체 매트릭스의 광융식에 의해 소정 파장에서 복사선의 한계 조사량에 대응되는 층인 방법.
  12. 제11항에 있어서, 도펀트가 2,2´,4,4´-테트라히드록시벤조페논, 2,2´-디히드록시-4,4´-디메톡시벤조페논, 4-페닐아조페놀 또는 이들의 혼합물인 방법.
  13. 제10항에 있어서, 선정된 파장이 350 내지 370nm인 방법.
  14. 제13항에 있어서, 선정된 파장이 351nm인 방법.
  15. 제10항에 있어서, UV광의 특정 영역이 300 내지 400nm인 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940009633A 1993-06-25 1994-04-29 레이저-상형성성 인쇄판 및 그의 제조방법 KR950000412A (ko)

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US8268993A 1993-06-25 1993-06-25
US08/082,689 1993-06-25

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KR950000412A true KR950000412A (ko) 1995-01-03

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US (1) US5925500A (ko)
EP (1) EP0634695B1 (ko)
JP (1) JP3463953B2 (ko)
KR (1) KR950000412A (ko)
CN (1) CN1111761A (ko)
AU (1) AU665147B2 (ko)
BR (1) BR9402431A (ko)
CA (1) CA2121865C (ko)
DE (1) DE4339010C2 (ko)
ES (1) ES2138646T3 (ko)
NZ (1) NZ260292A (ko)
TW (1) TW247297B (ko)

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TW247297B (ko) 1995-05-11
AU665147B2 (en) 1995-12-14
CN1111761A (zh) 1995-11-15
DE4339010A1 (de) 1995-01-05
CA2121865C (en) 2006-08-15
CA2121865A1 (en) 1994-12-26
JPH0717151A (ja) 1995-01-20
DE4339010C2 (de) 2000-05-18
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