KR830000491B1 - Partial voltage resistor of electron gun structure - Google Patents

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Description

Partial voltage resistor of electron gun structure

1 is a perspective view showing an example of a state of use of a resistor according to the present invention;

FIG. 2 is a circuit diagram showing partial voltage dividing at the resistor from the resistor to the electrode of the electron gun. FIG.

3 is a schematic side cross-sectional view of a cathode ray tube neck.

4 is a temperature gas discharge characteristic of a conventional electrode and the electrode of the present invention.

5A and 5B are a plan view and a cross-sectional side view showing a first embodiment of the present invention.

6 is a cross-sectional side view showing a second embodiment.

7A and 7B are a plan view and a cross-sectional side view showing a third embodiment.

8 is a film thickness and resistance change characteristics of the glass layer.

9 is a temperature and gas discharge characteristic diagram of a conventional resistor and the resistor of the present invention.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resistor for coupling a predetermined voltage to a predetermined electrode which is coupled like an electron gun structure inside a cathode ray tube and constitutes the electron gun structure.

The applicant first presented the electron gun structure used in the color cathode ray tube by "element 52-4577". In the present invention according to the above application, a thick film resistor is arranged in the vicinity of the electron gun structure, and at one end of the thick film resistor, an anode voltage is applied from the outside and a voltage divided at a predetermined position is supplied to a predetermined electrode of the electron gun. Doing. The present invention relates to a thick film resistor, but before explaining the present invention, a schematic description of the embodiment in the above application is described as follows on the basis of FIGS.

1 to 3 show examples when applied to a cathode ray tube by a Trinitron (registered trademark) method.

1 and 2, (1) is an electron gun, (2) is a stem made of glass, (3) is an exhaust pipe formed integrally with the stem (2), and (4) is installed on the stem (2). Terminal pins, G1 to G5 are first to fifth grids coaxially arranged with each other in a cylindrical structure, and (5) and (6) are provided through the support pieces 7 on the grids G1 to G5. Supports made of bead glass for support, (8), (9) is the inner convergence electrode attached to the flange 10 of the grid G5, (14) is a contact piece integrally installed on the flange (10), As described below, a predetermined voltage is applied while contacting the carbon film coated on the inner circumferential surface of the neck of the cathode ray tube in which the electron gun 1 is sealed. 15 is an insulated engine such as a ceramic supported at both ends by metal support pieces 16 and lead wires 22 on the side surfaces of the grids G1 to G5, and a resistor 17 is printed and glass-coated on the surface thereof. It is installed. Moreover, the dimension of this board | substrate 15 is 10 mm in width, 50 mm in length, and 1.5 mm in thickness, for example. An electrode 30a is formed at one end of the resistor 17, the electrode 30a and the grid G5 are connected to the support piece 16, and the grid G5 and the grid G3 are connected to the lead wire 19. It is. Moreover, the electrode 30b is formed in the predetermined position of the resistor 17, and the electrode 30b and the grid G4 are connected by the lead wire 20. As shown in FIG. Further, an electrode 30c is formed at a position separated from the electrode 30a by a predetermined length, and the electrode 30c and the convergence electrodes 11 and 12 are connected by the lead wire 21. The other end of the resistor 17 has an electrode 30d that is connected to the electrode 30 and the terminal pin 4a by a lead wire 22. The convergence electrodes 11 and 12 are electrically connected to each other.

The electron gun 1 according to the above configuration is installed in the neck 23 of the cathode ray tube as shown in FIG.

On the inner circumferential surface of the neck 23 is formed a carbon film 24 into which the contact piece 14 contacts, and the carbon film 24 is electrically connected to a voltage supply button (not shown) provided in the inside of the plate and is connected from the outside. When this button is pressed, a high voltage electric field of about 30 KV is applied.

According to the above configuration, the high voltage applied to the carbon film 24 is applied to the convergence electrodes 8, 9 and grid 5 via the contact piece 14. The voltage of the grid G5 is applied to the grid G3 via the lead wire 19, and at the same time, a voltage is applied to one end of the resistor 17 via the support piece 16. Therefore, the convergence electrodes 8, 9 and the grids G5, G3 have the same potential.

In addition, the voltage applied to the resistor 17 is divided at the point a, is applied to the convergence electrodes 11 and 12 via the lead wire 21, and is again divided at the point b to pass through the lead wire 20. Is applied to the grid G4. As a result, the potentials of the convergence electrodes 11 and 12 are slightly lower than the potentials of the convergence electrodes 8 and 9 (e.g., 29 KV), and the potential of the grid G4 is lowered again (e.g., For example, it can be 12KV). The other end of the resistor 17 is connected to the pin 4a by a lead wire 22, and the pin 4a is grounded by the variable resistor 25. The variable resistor 25 is provided to finely adjust the potentials of the grid G4 and the convergence electrodes 11 and 12. In addition, predetermined grids 4 are connected to the grids G1 and G2 so that predetermined voltages are applied from the outside.

According to the above, the voltage obtained from the contact piece 14 is divided by the resistor 17 and applied to each electrode, so that each electrode can be maintained at a predetermined electric potential.

In the present embodiment, the convergence voltage and the focus voltage are divided by the resistor in the resistor 17, but only one of the convergence voltage and the focus voltage may be taken out. As an example in the case where only the convergence voltage is taken out, feeding of the grid G4 may be performed by supplying a voltage of 0 to 5 KV from the terminal pin 4 as in the conventional art, not from the resistor 17.

When only the focus voltage is taken out, there is no convergence electrode, and the same applies to cathode ray tubes other than the trinitron method. In this case, it may be considered that there are no convergence electrodes 8, 9, 11, and 12 shown in FIG.

According to the above, in order to supply a high voltage to the carbon film 24, only one anode button of simple structure is provided in the panel part of a cathode ray tube, and the coaxial button used conventionally does not need to be used. Moreover, the effect of the cable wiring process in the pipe which was performed conventionally can also be skipped, and an assembling work can be performed easily.

Next, a thick film resistor according to the present invention will be described.

This thick film resistor has a structure in which a resistor 17 and electrodes 30a to 30d are formed on the substrate 15 as shown in FIGS. 1 and 2.

Thus, the resistor 17 installed and used inside the cathode ray tube, the conditions required for the material include (1) to withstand high temperatures, (2) a small amount of vaporization, (3) a small sputtering, ( 4) The change in resistance value is small. Particularly, with respect to (1), the release of gas due to high temperature during the locking in the frit chamber becomes an important problem in the manufacturing process of the cathode ray tube.

In general, there is a decrease in the degree of vacuum as one of the factors that determine the life of a vacuum device such as a cathode ray tube. For this reason, the problem of gas release of materials used in a vacuum system is particularly important, and due consideration should be given to the selection and pretreatment of materials.

In the frit chamber, heating is performed at about 430 ° C., but it is necessary to reduce the generation of gas due to the heating. When the locking process is completed, the cylindrical grid is discharged between each of the grids G1 to G5 by applying a high pressure of 50 to 60 KV, which is 2 to 3 times the rated voltage, between the convergence electrode and the terminal pin after assembly of the electron gun. Eliminate unnecessary thin barriers formed on the sides of the.

The high pressure is also applied to the resistor 17, which causes high resistance to the resistor 17 due to its resistance value R and I ² R due to the current I. It is necessary to prevent the resistor 17 from being deteriorated by this heat so that the resistance R does not change or the gas is released. The resistance value R is selected from 300 to 1000 MΩ, but its stability is required to be very precise. For example, in FIG. ₂ , the stability required when the resistance value between the electrode 30a and the point a is set to R ₁ and the resistance value from the point a to the electrode 30d as R ₂ is R ₁ / R _1. The value of + R ₂ must be stabilized within ± 0.3% of the predetermined value.

Other important issues include spattering between the patterns of the resistors 17 due to the bath surface discharge caused by the high electric field due to locking, which causes the resistance value R to change, It is necessary to prevent this because it adversely affects the electron gun.

As practically satisfying the above requirements, in the present invention, a glass system of RUO ₂ is used as the material of the resistor 17.

As an example, borosilicate glass is used as a binder. RuO ₂ powder and additives such as Ti and Al ₂ O ₃ are added thereto, followed by mixing and stirring the mixture with an organic binder such as ethylcellulose and a solvent such as BCA. do. As the substrate 15, one made of 90 to 97% of alumina is used.

The RuO ₂ -glass dough is formed on the substrate in a zigzag shape or waveform as shown in FIGS. 1 and 2 by screen printing method. Next, the resistor 17 can be obtained by firing at 750 to 850 ° C. for 40 to 60 minutes. In RuO ₂ -glass dough, the area resistance decreases as the ratio of RuO ₂ / glass increases, and the area resistance increases as the RuO ₂ powder becomes rough at the same ratio. In the present invention, the ratio is selected in the range up to about 20/80.

In addition, the thick film of the resistor 17 after firing is 10 to 15 µm. The resistor 17 thus obtained has a small change in resistance value of 10% even under high temperature and high pressure at the time of locking and little and stable gas emission. Was admitted. Again RuO ₂ is a splitter. Because of the small number, the adverse effect on the electron gun caused by the spit material can be reduced.

Next, the electrodes 30a to 30d will be described.

Generally, Ag or Ag-Pd type is used as a thick film resistor electrode material of this kind. When the resistor is used as the inside of the cathode ray tube, the conditions described in (1) to (4) are required as in the case of the resistor 17, and in particular, the discharge and sputtering of the gas by the high temperature high field during locking The problem becomes important.

As a result of experiment on a resistor in which an Ag or Ag-Pd-based electrode was formed on an alumina substrate, and a resistor 17 was formed from the RuO ₂ -glass system between the electrodes, as shown in FIG. Similarly significant gas evolution from the electrode was seen. In addition, it was recognized that the arc caused by the discharge concentrated on the electrode surface during locking.

In the present invention, an electrode material having the same RuO ₂ -glass type as that of the resistor 17 and having a higher ratio (RuO ₂ / glass) than the resistor 17 and lower area resistance is used. 5A and 5B show a first embodiment of a resistor according to the present invention and the following describes its manufacturing method.

First, RuO ₂ -glass dough is coated on the alumina substrate 15 by screen printing, and electrodes 30a to 30d are formed in a predetermined shape.

As the glass dough, a RuO ₂ -glass ratio of about 35/65 or more is used. Next, the high resistance of the area of the RuO ₂ -glass dough is applied in a wave form as shown between the electrodes to form the resistor 17. In this case, guide patterns 31a to 31d are formed in which the edge portions are slightly separated from each other between the electrodes 30a to 30d.

Next, by firing the substrate 15 on which the electrode and the resistor are formed, the resistors shown in Figs. 5a and b can be obtained. Moreover, the thick film of the electrodes 30a-30d after baking is about 10 micrometers.

As shown in FIG. 4, it was recognized that this resistor had a smaller amount of gas discharge than that of Ag or Ag-Pd-based electrodes. It as components of gas O ₂ is most abundant number of the generation of O ₂ with Ag-based electrode presence unstable is mixed in Figures AgO or Ag ₂ O ₂ and then fired at a high temperature easily and Ag have to be oxidized, and the these factors Ag ₂ O It is considered that O ₂ is decomposed in the process of becoming a stable form of.

According to this resistor, the edges of the low-resistance electrodes 30a to 30d are covered with the high-resistance guide patterns 31a to 31f, so that arcs caused by the discharge during locking are difficult to concentrate on the electrodes. This can suppress sputtering. As shown in FIG. 6 as the second embodiment, the entirety of each of the electrodes 30a to 30d may be covered with a resistor 17. In that case, the contact resistance is slightly increased, but there is no problem in practical use since the thick film is thin. 7a and b show a third embodiment, in which gas is released and sputtered by providing a glass layer 32 on the surface including the electrodes 30a to 30d of the substrate 15 and the resistor 17. This is to prevent the change of resistance caused by.

A glass layer 32 is used as the Al ₂ O ₃ of a glass paste mixed with about 10 to 40% of fine powder of the water in the borosilicate glass. As an example (glass / Al ₂ O ₃ ) the ratio is 90/10, 80/20. 75/25, etc., and a mixture of 10 to 20% of an organic binder and a solvent is applied thereto by screen printing.

In this case, in order to form a thick film, a screen of 50 to 120 meshes (thickness 200 to 300 µm) is superimposed and printed in two or three layers.

Next, it bakes for 20 to 30 minutes at 550-650 degreeC, and the glass layer 32 of 200-400 micrometers of thick films is obtained.

5Al ₂ O ₃ powder is mixed for the purpose of increasing the mechanical strength of the glass layer 32. In other words, when the thickness of the glass layer 32 is thickened, cracks easily enter due to an external force, and are mixed to prevent this. At the same time, the effect of making the expansion coefficient of the glass layer 32 close to that of the alumina substrate 15 is also obtained.

FIG. 8 shows the change in the resistance value R after the completion of the locking by performing high-pressure locking on the electron guns in which the kneading material in which the mixing amount of Al ₂ O ₃ is often changed and the resistors in which they are oriented in various thicknesses is put. The change in the resistance value after the end of the locking is adjusted by the variable resistor 25 in FIG. 2, while the vertical axis in FIG. 8 indicates the adjustment amount of the variable resistor 25. As shown in FIG. According to the eighth degree among properties to that of the Al ₂ O ₃ 10 to 20% it is accepted as if small changes in the resistance value of the thickness of the glass layer 32 is from 200 to 400㎛. In addition, when Al ₂ O ₃ is not mixed, a thick film cannot be thickened from 80 to 100 μm or more in terms of strength and stability of resistance, and as such thickness, resistance change at sputtering and high temperature is large and practical. It was confirmed that this is not.

Again, when Al ₂ O ₃ was 40% or more, it was confirmed that the glass layer 32 became porous and could not protect the resistance meter 17 and the electrodes 30a to 30d.

In the embodiment of Fig. 7, the guide patterns are not provided on the electrodes 30a to 30d, but the glass layer 32 may be formed on the resistors of Figs. Moreover, you may make it form the glass which mixed about 50-100 micrometers of the uppermost layer in the glass layer 32 without mixing. When Al ₂ O ₃ is mixed, the internal pressure is slightly lowered. However, when the Al ₂ O ₃ is mixed as described above, the internal pressure can be increased while suppressing the change of the resistance value.

9 shows the amount of O ₂ gas released with respect to the temperature of the resistance using Ag as the electrode material and RuO ₂ as the electrode material and a resistor without a glass layer. The frit chamber was carried out at a temperature of 430 占 폚 dropping, but it was recognized that the electrode pieces had little gas emission. In addition, the vertical axis | shaft shows the value obtained by ion material Ii by homogeneous analysis of oxygen release rate.

The present invention includes a resistor formed by a RuO ₂ -glass system and a surface including the resistor and the electrode of the insulating substrate, for example, in a resistor installed in the cathode ray tube as shown in FIGS. 1 and 2. It is related with the voltage divider resistor in the electron gun structure which provided the glass layer in the present invention.

Therefore, according to this invention, the thick film resistor which is stable with respect to the high temperature and high pressure in the manufacturing process of a cathode ray tube, and has high precision of resistance value can be obtained.

Claims (1)

A plurality of resistors are formed on the surface of the insulated substrate in the longitudinal direction, and electrodes are formed at predetermined positions between both ends of the resistor and both ends thereof, and a plurality of electron gun structures are formed on the side of the electron gun structure of the insulated substrate. The electrodes in one direction of the resistor are maintained at the anode voltage while the electrodes at the other end are sufficiently low and the predetermined electrodes of the electron gun structure A resistor configured to be supplied to a semiconductor, wherein the resistor is formed of a RuO ₂ -glass system and a glass layer is formed by mixing alumina on a surface including the resistor and the electrode of the insulating substrate. Voltage divider resistor.

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