KR20220111408A - A method of handling thin wafer - Google Patents
A method of handling thin wafer Download PDFInfo
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- KR20220111408A KR20220111408A KR1020210014614A KR20210014614A KR20220111408A KR 20220111408 A KR20220111408 A KR 20220111408A KR 1020210014614 A KR1020210014614 A KR 1020210014614A KR 20210014614 A KR20210014614 A KR 20210014614A KR 20220111408 A KR20220111408 A KR 20220111408A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
본 발명은 두께 100 um 이하의 박형 웨이퍼(thin wafer)를 취급하는 방법에 관한 것이다. 본 발명은 캐리어 웨이퍼를 박형 웨이퍼에 부착할 때 발포 테이프를 적용하는 것에 관한 것이다.The present invention relates to a method for handling thin wafers with a thickness of 100 μm or less. The present invention relates to the application of foam tape when attaching a carrier wafer to a thin wafer.
*Thin wafer(두께 100um 이하) 취급 방안이 필요한 이유 * Why thin wafers (thickness less than 100um) are needed
-> 얇은 Wafer 특성상 보다 두꺼운 wafer 에 비해 현저히 낮은 강도 및 왜곡(warpage)으로 인해 파손, 오염, Crack 등의 불안정 요소에 취약함 -> Due to the characteristics of thin wafers, it is vulnerable to instability factors such as breakage, contamination and cracks due to significantly lower strength and warpage compared to thicker wafers.
-> 단순히 얇은 Wafer 취급 방법에 대해서, 사람이 주의하는 데에는 한계가 있으므로 상당한 고가의 장비 도입 필요 -> There is a limit to how a person can simply handle thin wafers, so it is necessary to introduce considerable expensive equipment.
-> 공정 진행 간 고가의 Wafer 파손 발생시 큰 손실 비용이 따름 -> In case of damage to expensive wafers during the process, large loss costs follow.
*기존 Thin wafer 취급 방법 * Conventional thin wafer handling method
-> Resin 을 이용하여 Good Wafer와 Carrier Wafer 를 부착 후 경화 -> Hardening after attaching Good Wafer and Carrier Wafer using Resin
-> 후공정 진행 후 Chemical, Thermal, Mechanical, Laser 등의 Release 방법을 적용함 -> Apply release methods such as Chemical, Thermal, Mechanical, Laser, etc. after post-processing
-> Release 공정을 위해 Crystal 과 같이 별도 재질의 Carrier 제작이 필요한 경우도 있음 -> In some cases, it is necessary to produce a carrier made of a separate material such as crystal for the release process.
*기존 방법의 문제점 * Problems with existing methods
-> Wafer Bond : 균일한 Resin 도포를 위해 전용 설비 투자 필요, 공수 증가 -> Wafer Bond: Requires investment in dedicated equipment for uniform resin application, increased man-hours
-> Chemical Release : 환경 유해 물질 관리가 필요하며, 별도의 Carrier 제작이 필요 -> Chemical Release: Environmentally hazardous substances management is required, and a separate carrier is required.
-> Thermal Release : Hot Plate 고온에서 직접적인 작업환경에 의한 안전 및 파손 주의 필요 -> Thermal Release : Needs to be careful about safety and damage due to direct working environment at hot plate high temperature
-> Mechanical Release : 이형에 용이한 Resin 추가 도포 필요 -> Mechanical Release: Needs to apply additional resin for easy release
-> Laser Release : 고가의 Laser 가공 설비 초기 투자로 비용 증가 및 분진 관리 필요 -> Laser Release: The initial investment in expensive laser processing equipment increases cost and requires dust management
박형 웨이퍼를 처리할 때의 문제점을 해결하고자 한다.To solve the problem of processing thin wafers.
캐리어 웨이퍼를 박형 웨이퍼에 부착할 때 발포 테이프를 적용한다.Foam tape is applied when attaching the carrier wafer to the thin wafer.
*발포테이프를 이용하여 Carrier Wafer 부착*Attach the carrier wafer using foam tape
-. 부착 재료 단가 경쟁력 확보 -. Securing cost competitiveness of attachment materials
-. Tape Laminate 단일 설비 사용으로 -. Tape Laminate single equipment use
초기 투자비용 부담 해소 Eliminate the burden of initial investment cost
-. Guide jig 활용으로 1:1 정확한 Matching -. 1:1 Accurate Matching with Guide Jig
-. Pre-cut type의 발포테이프 적용으로 -. Pre-cut type foam tape
테이프 부착 후 별도의 Cut 과정 불필요 No need for a separate cut process after attaching the tape
-. 부착 후 열경화 등의 후공정 불필요 -. No post-processing such as thermosetting after attachment
*Good Wafer Release 과정*Good Wafer Release course
-. 대량 생산 가능 -. Mass production available
-. Release 후 세척 불필요 -. No cleaning required after release
-. 낮은 응력으로 Wafer Stress 최소화 -. Low stress minimizes wafer stress
-. 환경 유해 물질 관리 불필요 -. No need to manage environmentally hazardous substances
-. 열경화 Oven 설비로 초기 투자비용 저렴 -. Low initial investment cost with thermosetting oven facility
-. Cassette 단위 공정 진행으로 안전한 작업 -. Safe operation with Cassette unit process progress
도 1은 본 발명의 실시예에 따른 박형 웨이퍼 처리 방법의 순서도이다.1 is a flowchart of a thin wafer processing method according to an embodiment of the present invention.
종래의 취급방법은 다음과 같다.The conventional handling method is as follows.
*Resin을 이용하여 Carrier Wafer 부착*Attach the carrier wafer using resin
-. 부착 후 별도의 열경화 과정 필요 -. A separate heat curing process is required after attachment
-. Resin 재료 단가 상승 -. Resin material cost increase
-. Resin 도포 전용 설비 투자 필요 -. Requires investment in equipment dedicated to resin application
-. Carrier Wafer 부착 공수 증가 -. Increases the number of work required for attaching the carrier wafer
*Good Wafer Release 과정*Good Wafer Release course
-. 공수 증가 -. increase in airlift
-. Release 후 세척 과정 필요 -. Cleaning process required after release
-. 환경 유해물질 관리 필요 -. Need to manage environmentally hazardous substances
-. 초기 설비 투자 비용 증가 -. Increased initial capital investment cost
-. 작업 환경 관리 필요 -. Work environment management required
-. 산업 안전 관리 필요 -. Occupational safety management required
본 발명의 특징은 다음과 같다.The features of the present invention are as follows.
*발포테이프를 이용하여 Carrier Wafer 부착*Attach the carrier wafer using foam tape
-. 부착 재료 단가 경쟁력 확보 -. Securing cost competitiveness of attachment materials
-. Tape Laminate 단일 설비 사용으로 -. Tape Laminate single equipment use
초기 투자비용 부담 해소 Eliminate the burden of initial investment cost
-. Guide jig 활용으로 1:1 정확한 Matching -. 1:1 Accurate Matching with Guide Jig
-. Pre-cut type의 발포테이프 적용으로 -. Pre-cut type foam tape
테이프 부착 후 별도의 Cut 과정 불필요 No need for a separate cut process after attaching the tape
-. 부착 후 열경화 등의 후공정 불필요 -. No post-processing such as thermosetting after attachment
*Good Wafer Release 과정*Good Wafer Release course
-. 대량 생산 가능 -. Mass production available
-. Release 후 세척 불필요 -. No cleaning required after release
-. 낮은 응력으로 Wafer Stress 최소화 -. Low stress minimizes wafer stress
-. 환경 유해 물질 관리 불필요 -. No need to manage environmentally hazardous substances
-. 열경화 Oven 설비로 초기 투자비용 저렴 -. Low initial investment cost with thermosetting oven facility
-. Cassette 단위 공정 진행으로 안전한 작업 -. Safe operation with Cassette unit process progress
도 1은 본 발명의 실시예에 따른 박형 웨이퍼 처리 방법의 순서도이다.1 is a flowchart of a thin wafer processing method according to an embodiment of the present invention.
1.원자재 박형 웨이퍼는 50~100um 이다. 1. Raw material Thin wafer is 50~100um.
2.양면 발포 테이프를 피나클 금형으로 웨이퍼 형태로 제단한다.2. Cut the double-sided foam tape in the form of a wafer with a pinnacle mold.
3.웨이퍼 표면에 수성 화학약품을 처리한다. detape 시 점착 이물질 잔류를 방지한다.3.Wafer surface is treated with water-based chemicals. Prevents adhesive foreign substances from remaining during detape.
4. 롤러 방식의 오토 설비로 발포 테이프를 1:1로 부착한다.4. Attach the foam tape 1:1 with roller-type auto equipment.
5.웨이퍼 외곽에 맞추어 핀 방식으로 지그를 고정한다.5.Fix the jig with a pin method according to the outer edge of the wafer.
6.liner 필름 제거후 캐리어 웨이퍼를 본딩한다.6. After removing the liner film, bond the carrier wafer.
7.가이드 지그 탈착 후 롤러로 압착한다.7. After removing the guide jig, press it with a roller.
8.진공 챔버 내에서 잔기포를 제거한다.8. Remove any residual bubbles in the vacuum chamber.
9.다양한 후공정을 진행한다.9. Various post-processes are carried out.
10.적정 시간 및 온도에서 발포를 진행한다.10. Proceed with foaming at the appropriate time and temperature.
11.캐리어 웨이퍼를 분리한다.11. Remove the carrier wafer.
12.후공정으로 이동한다.12. Move to post process.
*50~100 um 두께의 Thin Wafer에 Carrier Wafer 를 부착하여 두께 및 강도를 보강한다. * Reinforce the thickness and strength by attaching a carrier wafer to a thin wafer with a thickness of 50 to 100 um.
* Carrier Wafer 를 덧붙인 Thin Wafer 는 Ion Implant, Wafer Back Grind, Wafer 증착 등 이후 공정에서 Wafer 파손 없이 안정적으로 진행이 가능하다. * Thin Wafer with Carrier Wafer can be performed stably without damage to the Wafer in subsequent processes such as Ion Implant, Wafer Back Grind, and Wafer Deposition.
*양면 발포 테이프를 활용하여 Wafer Bond 및 Detape 과정에서 Wafer 에 직접적인 스트레스를 줄이는 데 용이하다. *It is easy to reduce the direct stress on the wafer in the process of wafer bonding and detape by using double-sided foam tape.
*Good Wafer 표면에 수성 화학약품 처리를 통해 Detape 후 점착 잔유물이 남아있지 않도록 사전 조치한다.* Take precautionary measures so that no adhesive residue remains after detape through water-based chemical treatment on the surface of the Good Wafer.
*Good Wafer 와 Carrier Wafer 를 부착할 때, Guide Jig를 활용하여 1:1 Align Matching 하는데 있어서 손쉽고 정확히 부착할 수 있다.*When attaching the Good Wafer and Carrier Wafer, it can be easily and accurately attached in 1:1 Align Matching using a Guide Jig.
Claims (5)
상기 박형 웨이퍼의 상부에 발포 테이프를 부착하는 제1부착단계(S20);
상기 제1부착단계(S20)에서 박형 웨이퍼에 부착된 발포 테이프의 상부에 캐리어 웨이퍼를 부착하는 제2부착단계(S30);
상기 제2부착단계(S30)에서 캐리어 웨이퍼가 부착된 박형 웨이퍼를 진공 챔버에 투입하여 기포를 박리하는 기포박리단계(S40);
상기 기포박리단계(S40)에서 기포가 박리된 박형 웨이퍼에 후공정을 진행하는 후공정단계(S50);
상기 후공정단계(S50)에서 후공정이 진행된 박형 웨이퍼를 가열하고 상기 발포 테이프 및 캐리어 웨이퍼를 박리하는 박리단계(S60);
가 포함되는 것을 특징으로 하는 발포 테이프를 이용한 박형 웨이퍼 취급 방법.
A preparation step of preparing a thin type wafer (S10);
A first attachment step (S20) of attaching a foam tape to the upper portion of the thin wafer;
a second attachment step (S30) of attaching a carrier wafer to the top of the foam tape attached to the thin wafer in the first attachment step (S20);
a bubble peeling step (S40) of putting the thin wafer to which the carrier wafer is attached in the second attachment step (S30) into a vacuum chamber to peel the bubbles;
A post-processing step (S50) of performing a post-process on the thin wafer from which the bubbles are peeled in the bubble peeling step (S40);
A peeling step (S60) of heating the post-processed thin wafer in the post-processing step (S50) and peeling the foam tape and the carrier wafer;
A thin wafer handling method using a foam tape, characterized in that it is included.
상기 준비단계(S10) 이후,
발포 테이프를 상기 박형 웨이퍼에 대응되는 형상으로 제단하는 제단단계(S13); 및
상기 박형 웨이퍼의 상부에 수성 화학약품을 처리하는 처리단계(S15);
가 포함되는 것을 특징으로 하는 발포 테이프를 이용한 박형 웨이퍼 취급 방법.
According to claim 1,
After the preparation step (S10),
A cutting step (S13) of cutting the foam tape into a shape corresponding to the thin wafer; and
A processing step of treating an aqueous chemical on the thin wafer (S15);
A thin wafer handling method using a foam tape, characterized in that it is included.
상기 제1부착단계(S20) 이후,
상기 제2부착단계(S30)에서 캐리어 웨이퍼가 부착된 박형 웨이퍼의 외주연을 따라 가이드지그를 고정하는 고정단계(S21);
가 포함되는 것을 특징으로 하는 발포 테이프를 이용한 박형 웨이퍼 취급 방법.
According to claim 1,
After the first attachment step (S20),
A fixing step (S21) of fixing the guide jig along the outer periphery of the thin wafer to which the carrier wafer is attached in the second attachment step (S30);
A thin wafer handling method using a foam tape, characterized in that it is included.
상기 제2부착단계(S30) 이후,
상기 제2부착단계(S30)에서 캐리어 웨이퍼가 부착된 박형 웨이퍼의 상부를 압착하는 압착단계(S31);
가 포함되는 것을 특징으로 하는 발포 테이프를 이용한 박형 웨이퍼 취급 방법.
According to claim 1,
After the second attachment step (S30),
Compression step (S31) of pressing the upper portion of the thin wafer to which the carrier wafer is attached in the second attachment step (S30);
A thin wafer handling method using a foam tape, characterized in that it is included.
상기 후공정단계(S50)에서 진행되는 후공정에는,
상기 기포박리단계(S40)에서 기포가 박리된 박형 웨이퍼에 이온을 주입하는 이온주입단계(Ion implant);
상기 기포박리단계(S40)에서 기포가 박리된 박형 웨이퍼의 하면을 연삭하는 연삭단계(Back grinding); 및
상기 기포박리단계(S40)에서 기포가 박리된 박형 웨이퍼의 하면에 박막을 증착하는 증착단계(Wafer deposition);
중 어느 하나 또는 복수의 단계가 포함되는 것을 특징으로 하는 발포 테이프를 이용한 박형 웨이퍼 취급 방법.According to claim 1,
In the post process performed in the post process step (S50),
an ion implantation step (Ion implant) of implanting ions into the thin wafer from which the bubbles are removed in the bubble peeling step (S40);
A grinding step (Back grinding) of grinding the lower surface of the thin wafer from which the bubbles are peeled in the bubble peeling step (S40); and
a deposition step of depositing a thin film on the lower surface of the thin wafer from which the bubbles are removed in the bubble peeling step (S40);
A thin wafer handling method using a foam tape, characterized in that any one or a plurality of steps are included.
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| KR20170047176A (en) * | 2015-10-22 | 2017-05-04 | 저지앙 마이크로테크 머테리얼 컴퍼니 리미티드 | A procedure of processing a workpiece and an apparatus designed for the precedure |
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- 2021-02-02 KR KR1020210014614A patent/KR102585352B1/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006196779A (en) * | 2005-01-14 | 2006-07-27 | Sharp Corp | Method for manufacturing semiconductor device |
| JP2009302178A (en) * | 2008-06-11 | 2009-12-24 | Ulvac Japan Ltd | Bonding device and bonding method |
| KR20120027237A (en) * | 2009-04-16 | 2012-03-21 | 수스 마이크로텍 리소그라피 게엠바하 | Improved apparatus for temporary wafer bonding and debonding |
| KR20170047176A (en) * | 2015-10-22 | 2017-05-04 | 저지앙 마이크로테크 머테리얼 컴퍼니 리미티드 | A procedure of processing a workpiece and an apparatus designed for the precedure |
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| KR102585352B1 (en) | 2023-10-06 |
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