KR20220064678A - Radiation Detector using Scintillator having High Sensitivity and High Resolution - Google Patents

Abstract

The present invention relates to a radiation detector using a highly sensitive scintillator with high resolution. According to the present invention, the radiation detector comprises: an image sensor substrate having a plurality of pixel sensors having an array form; and a scintillator structure directly laminated and installed on the image sensor substrate in a paste form to be integrated with the image sensor substrate and converting light into visible light by radiation. The scintillator radiated toward a front surface or a rear surface of the scintillator structure penetrates the image sensor, so that the visible ray is generated from a scintillation substance of the scintillator structure and the image sensor reads an electrical signal proportional to the visible light in each pixel.

Description

Radiation Detector using Scintillator having High Sensitivity and High Resolution

The present invention relates to a radiation detector such as X-rays and gamma rays, and more particularly, to a flat, curved, or flexible radiation detector capable of obtaining a high-sensitivity and high-resolution image with a low dose by being irradiated with radiation from the front or rear will be.

The indirect digital radiation detection device is a scintillator that absorbs radiation such as X-rays to generate visible light, a photodiode (PD) to read the generated visible light as an electrical signal, and an amorphous silicon thin film transistor (TFT) Si TFT), a complementary metal oxide semiconductor (CMOS), and an image sensor including a charge coupled device (CCD). In this case, various powdered phosphors such as Gd ₂ O ₂ S(Tb) and Gd ₂ O ₂ S(Eu) materials having a thickness of several tens to hundreds of μm have been tried as the scintillator. In the indirect digital radiation detection apparatus, if a thick scintillator is used, the amount of light can be increased but the resolution of the image is low. This is because the thicker the scintillator, the more scattering occurs during the progress of the generated visible light, so the light spread is increased, and finally the resolution of the X-ray image is severely deteriorated.

In order to fabricate a scintillator for improving spatial resolution by reducing the spread of light, a pixel structure type in which a pixel-type scintillator structure is combined on an image sensor has been attempted. For example, a microstructured phosphor having a columnar or needle shape has been tried through physical vapor deposition (PVD), and a scintillator having a needle column-shaped micropixel structure has been tried. Even if used, there is still light diffusion, so a method for more completely preventing light scattering is required. In addition, a pixel structure is first manufactured through a trench process through RIE (deep reactive ion etching) of a silicon wafer or a PDP (Plasma Display Panel) barrier rib structure process for insulators on glass, and then the grooves of the pixels separated by the barrier ribs. There are studies on realizing clear image quality using a pixel-structured scintillator by mixing the scintillator powder with the paste or by melting and solidifying the powder.

In particular, since visible light generated in the powder-type scintillator lowers the spatial resolution of the image through scattering, as a countermeasure against this, a microstructure of a columnar structure is formed through a physical vapor deposition device to generate within the scintillator. The spread of light can be minimized. The scintillator used here should be a material with high atomic number and density, such as CsI(Na) or CsI(Tl), and a photodiode with a wavelength of visible light to be emitted and a doping material with good quantum efficiency. do. However, even if a scintillator having a needle-pillar-shaped microstructure is used, light diffusion still exists, so research is needed to prevent perfect light scattering. In addition, when a pixel-structured scintillator is used, there is a problem in that the resolution is improved but the sensitivity is lowered. In addition, since the conventional indirect radiation detector uses a rigid flat sensor, the resolution of the image varies for each patient depending on the body size or shape, which is inconvenient and frequently requires re-photography, and the scattering of radiation Image distortion caused by this is a problem that needs to be continuously improved.

As related documents, reference may be made to US Patent Publication Nos. 6,744,052, US6,784,432, and the like.

Accordingly, the present invention has been devised to solve the above-described problems, and an object of the present invention is to form an image sensor on a glass substrate, a carbon substrate, an aluminum substrate, an optical fiber substrate, etc., and GOS (Gd ₂ O ₂ S: By directly forming a scintillator such as Tb) to provide an integrated radiation detector, high sensitivity and high resolution with a low dose compared to the conventional method of combining or bonding a scintillator and an image sensor individually manufactured in a conventional method in various processes An object of the present invention is to provide a flat, curved, or flexible radiation detector capable of acquiring an image of and capable of irradiating front or rear radiation.

First, to summarize the features of the present invention, a radiation detector according to an aspect of the present invention for achieving the above object, an image sensor substrate having a plurality of pixel sensors in the form of an array; and a scintillator structure that is directly laminated and dried on the image sensor substrate in the form of a paste to be integrally formed with the image sensor substrate and converted into visible light by radiation, wherein the scintillator structure is irradiated toward the front or rear surface of the scintillator structure. As the radiation passes through the image sensor, visible light is generated from the scintillation material of the scintillator structure, and the image sensor reads an electrical signal proportional to the visible light at each pixel.

The method of direct lamination of the scintillator structure includes a screen printing method or a spray coating method using a scintillator paste mixed with a scintillator powder and a binder.

The method of direct lamination of the scintillator structure includes a screen printing or spray coating method using a scintillator paste obtained by precipitation after mixing the scintillator powder with a binder.

The scintillator structure includes a single scintillator layer having a uniform average scintillator particle size.

The scintillator structure includes double scintillator layers having different average scintillator particle sizes.

The double scintillator layer may be formed so that the particle size of the image sensor side is larger than the particle size of the opposite side.

The double scintillator layer may be formed so that the particle size of the image sensor side is smaller than the particle size of the opposite side.

The image sensor substrate includes the plurality of pixel sensors formed on a flat, curved or flexible substrate.

The image sensor substrate includes a glass substrate, a silicon substrate, a plastic substrate, a carbon substrate, an aluminum substrate, or an optical fiber substrate having the plurality of pixel sensors.

The image sensor substrate includes an amorphous silicon-based photodiode (PD)-thin film transistor (TFT) array, or a crystalline silicon-based complementary metal oxide semiconductor (CMOS) or CCD (Charge Coupled Device) array on a predetermined substrate. include

The image sensor substrate may have a curved or flexible shape by etching or polishing the back surface of the predetermined substrate after the array is formed on the predetermined substrate.

A light absorber or light reflector that is directly laminated and dried on the image sensor substrate in the form of a paste may be further included.

It may further include a light absorber or light reflector that is directly laminated and dried on the scintillator structure in the form of a paste.

According to the radiation detector according to the present invention, an image sensor is formed on a glass substrate, a carbon substrate, an aluminum substrate, an optical fiber substrate, etc., and a scintillator such as GOS (Gd ₂ O ₂ S:Tb) is directly formed thereon (eg, screen printing). , spray coating, etc.), the conventional method of combining or bonding individually manufactured scintillators and image sensors in various processes (e.g., physical compression using fixtures/jigs, OCA (Optically Clear Adhesive) ), high-sensitivity and high-resolution images can be obtained with a low dose compared to laminating using epoxy/silicone, etc.). In addition, the radiation detector structure of the present invention can be implemented as a front irradiation type or a rear irradiation type in the radiation direction, and by making the integrated structure coated with the substrate and the scintillator have a flat, curved, or flexible structure, various radiation A detector structure may be provided.

BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are included as part of the detailed description to help the understanding of the present invention, provide an embodiment of the present invention and together with the detailed description, explain the technical spirit of the present invention.
1A is a view for explaining a front irradiation method of a radiation detector according to an embodiment of the present invention.
Figure 1b is a view for explaining the rear irradiation method of the radiation detector of the present invention.
2A and 2B are examples of specific laminate structures of the radiation detector of the present invention.
3 is an example of an enlarged photograph of the double scintillator layer structure of the present invention.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. In this case, the same components in each drawing are denoted by the same reference numerals as much as possible. In addition, detailed descriptions of already known functions and/or configurations will be omitted. The content disclosed below will focus on parts necessary to understand operations according to various embodiments, and descriptions of elements that may obscure the gist of the description will be omitted. Also, some components in the drawings may be exaggerated, omitted, or schematically illustrated. The size of each component does not fully reflect the actual size, so the contents described herein are not limited by the relative size or spacing of the components drawn in each drawing.

In describing the embodiments of the present invention, if it is determined that the detailed description of the known technology related to the present invention may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. And, the terms to be described later are terms defined in consideration of functions in the present invention, which may vary according to intentions or customs of users and operators. Therefore, the definition should be made based on the content throughout this specification. The terminology used in the detailed description is for the purpose of describing embodiments of the present invention only, and should not be limiting in any way. Unless explicitly used otherwise, expressions in the singular include the meaning of the plural. In this description, expressions such as “comprising” or “comprising” are intended to indicate certain features, numbers, steps, acts, elements, some or a combination thereof, one or more other than those described. It should not be construed to exclude the presence or possibility of other features, numbers, steps, acts, elements, or any part or combination thereof.

In addition, terms such as first, second, etc. may be used to describe various components, but the components are not limited by the terms, and the terms are for the purpose of distinguishing one component from other components. is used only as

1A is a view for explaining a front irradiation method of the radiation detector 100 according to an embodiment of the present invention.

Figure 1b is a view for explaining a method of irradiating the back side of the radiation detector 100 of the present invention.

1A and 1B, the radiation detector 100 according to an embodiment of the present invention is a flat, curved or flexible image sensor substrate having a plurality of pixel sensors (one-dimensional or two-dimensional array) in the form of an array ( 110), and directly laminated on the image sensor substrate 110 in the form of a paste (such as screen printing or spray coating method) and dried to form integrally with the image sensor substrate 110, and radiation (eg, X-rays, gamma rays, etc.) etc.) to convert to visible light by means of a planar, curved or flexible scintillator structure 120 .

1A and 1B, the shape of the curved or flexible image sensor substrate 110 and the scintillator structure 120 is illustrated, but the present invention is not limited thereto, and the image sensor substrate 110 and the scintillator structure 120 are rigid and planar it may be

The radiation may be irradiated toward the front side of the scintillator structure 120 as shown in FIG. 1A or toward the rear side of the scintillator structure 120 as shown in FIG. 1B (toward the image sensor substrate 110). In the radiation front irradiation method as shown in FIG. 1A , as radiation is irradiated to the scintillator structure 120 , visible light is generated from the scintillation material of the scintillator structure 120 , and the image sensor substrate 110 receives the corresponding visible light from each pixel. A proportional electrical signal is read. As shown in FIG. 1b, in the radiation backside irradiation method, as the radiation is irradiated toward the image sensor substrate 110 and passes through the image sensor substrate 110, visible light is generated from the scintillation material of the scintillator structure 120, and the image The sensor 100 reads an electrical signal proportional to the corresponding visible light in each pixel.

To this end, the image sensor substrate 110 includes a plurality of pixel sensors in a one-dimensional or two-dimensional array on a flat, curved, or flexible substrate such as a glass substrate, a silicon substrate, a plastic substrate, a carbon substrate, an aluminum substrate, or an optical fiber substrate. including a photodiode (refer to FIG. 2a, 111) formed in a one-dimensional or two-dimensional array on a flat, curved, or flexible substrate to correspond to each pixel sensor and a circuit array for driving each pixel sensor (refer to FIG. 2A) , 112) (or elements).

The image sensor substrate 110 is made to transmit radiation and may be of a planar shape, but after the photodiode 111 and the circuit array 112 are formed on a substrate such as a glass substrate or a silicon substrate lacking flexibility, the corresponding substrate It may be in the form of a curved or flexible, radiation-permeable substrate by etching or polishing the rear surface of the substrate. Here, the circuit array 112 is a photodiode (PD) and a thin film transistor (TFT) array formed of a photodiode (PD) and a metal oxide semiconductor field effect transistor (MOSFET) structure using amorphous silicon as an active layer, or a crystalline silicon based array. of CMOS (complementary metal oxide semiconductor) or CCD (Charge Coupled Device) array. It may be implemented as various image sensors that can be implemented on other crystalline silicon substrates.

For example, in order to operate as a dental oral radiation detector, high-speed, high-sensitivity, and high-resolution must be realized with a low dose, so a method implemented with a complementary metal oxide semiconductor (CMOS) circuit or a charge coupled device (CCD) circuit is preferable. In some cases, the image sensor substrate 110 may be implemented as other various image sensors that can be implemented on other crystalline silicon substrates.

In the present invention, the scintillator structure 120 is directly laminated on the image sensor substrate 110 in a paste form (screen printing or spray coating method, etc.) and dried to be integrally formed with the image sensor substrate 110 . For example, the scintillator structure 120 may include GOS(Gd ₂ O ₂ S:Tb) (optionally CsI:Tl, YAG:Ce, LuAG:Ce) on the photodiode 111 side of the image sensor substrate 110 . , LSO:Tb, LYSO, GSO, BGO, or GAGG etc. scintillator is made into microparticles or nanopowder and paste form with binder (other additives can be added) and coated directly (screen printing or spraying) coating method, etc.) may be formed.

The nanopowder form may be obtained through a crushing or grinding process of powder having a size within a few micrometers, or nanopowder synthesis. When a micrometer-sized scintillator is used, the resolution of the final image may be lowered due to blurring, etc., because light scattering within the scintillator is very high. Video implementation is possible. The scintillation material of the scintillator structure 120 may receive radiation such as X-rays and gamma rays to emit visible light. It is preferable that the wavelength of visible light is designed to have good quantum efficiency in the photodiode 111 . The binder may be made of an appropriate weight % (eg, 6:4 to 9:1) of Texanol and a resin-based material (eg, acrylic resin, PVA, etc.). The scintillator powder and binder can be made in weight percent (eg, 6:4 to 9:1) for appropriate viscosity and light output. As the additive, a copolymer having an acidic group may be used to prevent powder agglomeration during paste formation. In this way, the scintillator paste made by mixing the scintillator powder together with the binder (other additives can be added) may be directly laminated by screen printing or spray coating, and the scintillator paste is deposited according to the concentration of the image sensor. It may be directly laminated on the substrate 110 and dried. For example, when the weight % of the scintillator powder mixed with the binder (other additives can be added) is small (eg, when the weight other than the scintillator powder is greater than the weight of the scintillator powder), the scintillator obtained by precipitating the mixture solution It is possible to apply the paste to be laminated by screen printing or spray coating.

As described above, the scintillator paste made in the form of a paste may be directly laminated on the image sensor substrate 110 by screen printing or spray coating method and dried to form an integrated scintillator structure 120 . In some cases, for example, an image sensor using a scintillator powder, a growth method such as the Czochralski method, a Bridgman method, a Liquid Phase Epitaxy (LPE) method, or a physical evaporation method such as PVD (Physical Vapor Deposition) The scintillator structure 120 may be formed on the substrate 110 .

In particular, in the present invention, the scintillator structure 120 is formed in a paste form on the image sensor substrate 110 and directly coated (screen printing or spray coating method, etc.), so that the overall structure has a curved shape. There is an advantage in that it is possible to prevent warping and there is no need to align. In addition, in case of direct coating compared to the process in conventional methods (e.g., physical compression using a fixing device/jig, laminating using OCA (Optically Clear Adhesive), bonding using epoxy/silicone, etc.), visible light emission, sensitivity and resolution can improve

2A and 2B are examples of specific laminate structures of the radiation detector 100 of the present invention.

2a and 2b, in the present invention, the image sensor substrate 110 such as PD-TFT, CMOS, CCD, etc. has a photodiode 111 in each pixel sensor, a reset transistor for driving each pixel sensor, A circuit array 112 including elements such as a driver transistor and an address transistor may be provided. Although not shown in the drawings, a protective film such as a silicon oxide film may be formed on the photodiode 111 .

Also, FIG. 2A is an example in which a single scintillator layer 122 is applied as a first embodiment of the radiation detector 100 of the present invention. 2B is an example in which the double scintillator layers 124 and 126 are applied as a second embodiment of the radiation detector 100 of the present invention. The scintillator structure 120 may be a single scintillator layer 122 having a uniform average scintillator particle size as shown in FIG. 2A, or may be a double scintillator layer 124, 126 having different average scintillator particle sizes as shown in FIG. 2B. there is. However, this is only an example, and in some cases, the scintillator structure 120 may be formed of a plurality of layers more than a double layer. 2a and 2b, after the scintillator structure 120 is directly laminated and dried on the image sensor substrate 110 in the same manner as above and formed, an additional layer such as a light absorber or a light reflector on the scintillator structure 120 ( 121) may be formed. The additional layer 121 may also be formed by directly laminating and drying the above-mentioned additional layer material in a paste form, such as screen printing or spray coating. In addition, although it is illustrated that the additional layer 121 is formed on the scintillator structure 120 in FIGS. 2A and 2B , the present invention is not limited thereto, and the additional layer 121 may be formed on the image sensor substrate 110 side. For example, the additional layer 121 as shown in FIGS. 2A and 2B may be a light absorber for radiation in a front irradiation method and a light reflector to radiation in a rear irradiation method. Even when the additional layer 121 is formed on the side of the image sensor substrate 110 , the layer may be a light reflector for radiation in the front irradiation method and an absorber to radiation in the rear irradiation method. .

When a single scintillator layer 122 is applied as the scintillator structure 120 as shown in FIG. 2A , and when the double scintillator layers 124 and 126 are applied as the scintillator structure 120 as shown in FIG. 2B , the pixel in the scintillator structure 120 . There is no distinction, and visible light is generated from the scintillation material of the scintillator structure 120 by the radiation irradiated to the front or back side, and the image sensor substrate 110 may read an electrical signal proportional to the visible light in each pixel.

Each scintillator layer of the single scintillator layer 122 and the double scintillator layer 124 , 126 has a GOS(Gd ₂ O ₂ S:Tb) (optionally CsI) on the photodiode 111 side of the image sensor substrate 110 . A scintillator such as :Tl, YAG:Ce, LuAG:Ce, LSO:Tb, LYSO, GSO, BGO, or GAGG, etc. is made into microparticles or nanopowders, and is directly coated ( Screen printing or spray coating method, etc.) may be formed.

In the case where the scintillator structure 120 is a double scintillator layer as shown in FIG. 2B, for example, in the front radiation ancestral method, in order to improve the sensitivity and resolution by increasing the amount of visible light emitted, as shown in FIG. 3(a), the image sensor substrate It is preferable that the particle size of the corresponding layer 126 on the side adjacent to the photodiode 111 on the (110) side is smaller than the particle size of the corresponding layer 124 on the opposite side. However, on the contrary, in some cases, for example, as shown in FIG. 3B , the particle size of the side adjacent to the photodiode 111 on the side of the image sensor substrate 110 is larger than the particle size of the opposite side. It is also possible In addition, for example, in the rear radiation ancestral method, in order to increase the amount of visible light emitted to improve sensitivity and resolution, as shown in FIG. It is preferable that the particle size of the corresponding layer 126 be larger than the particle size of the corresponding layer 124 on the opposite side. However, on the contrary, in some cases, for example, as shown in FIG. 3A , the particle size of the side adjacent to the photodiode 111 on the image sensor substrate 110 is smaller than the particle size of the opposite side. It is also possible

As described above, the image sensor substrate 110 of the present invention is made to transmit radiation and may have a planar shape, but a photodiode 111 and a circuit array 112 are formed on a substrate such as a glass substrate or a silicon substrate that lack flexibility. After formation, the back surface of the substrate is etched or polished to form a curved or flexible, radiation-permeable substrate. For example, as in the present invention, by reducing the radiation dose absorbed from the substrate by about 10% by grinding and thinning a glass substrate or a silicon substrate, the image signal can be improved by increasing the dose incident on the scintillator, In the case of using a radiation detector having a structure that irradiates radiation to the back rather than irradiating radiation to the back, it is possible to minimize the dose irradiated to the patient by acquiring an image signal higher than about 10%. Furthermore, as shown in FIG. 3B , the particle size of the corresponding layer 126 on the side adjacent to the photodiode 111 on the image sensor substrate 110 is larger than the particle size of the corresponding layer 124 on the opposite side. By forming, a side closer to the image sensor substrate 110 receives radiation first, and a side with a larger particle size receives radiation first to increase the amount of visible light emission, thereby further improving sensitivity and resolution.

The scintillator paste made in the form of paste on the structure of the image sensor substrate 110 is directly coated on the image sensor substrate 110 (screen printing or spray coating method, etc.), so that the overall structure has a curved shape. When finished, it is possible to prevent distortion and has the advantage of not needing to align. In addition, compared to the process in the existing method (e.g., physical compression using a fixing device/jig, laminating using OCA (Optically Clear Adhesive), bonding using epoxy/silicone, etc.) Visible light emission amount, sensitivity and resolution can be provided higher than the conventional method, and when the irradiation dose of radiation is higher than the conventional method, it is possible to significantly improve the visible light emission amount, sensitivity and resolution.

In addition, the radiation detector 100 manufacturing method of the present invention as described above, compared to conventional methods (eg, physical compression using a fixing mechanism/jig, OCA (Optically Clear Adhesive)), it is possible to improve the packaging yield and minimize the process cost By doing this, the manufacturer can greatly reduce the unit cost, which has the advantage of producing a low-cost detector, that is, as a method to replace the existing scintillator manufacturing method and packaging technology, individually manufactured scintillator and optical sensor are combined/bonded through various processes It is not possible to provide a radiation detector 100 that is manufactured integrally at one time as in the present invention, rather than a method of doing so.

Accordingly, the radiation detector 100 according to the present invention can be effectively applied to diagnostic radiation such as X-rays and gamma rays or high-energy radiation fields, particularly low-dose X-ray fluoroscopy applications as well as high sensitivity and high resolution. It can be used as a variety of diagnostic medical imaging devices such as general radiography, dental radiography, and mammography.

As described above, the radiation detector according to the present invention forms an image sensor on a glass substrate, a carbon substrate, an aluminum substrate, an optical fiber substrate, etc., and directly forms a scintillator such as GOS (Gd ₂ O ₂ S:Tb) on it ( For example, by implementing an integrated radiation detector that performs screen printing, spray coating, etc., the conventional method of combining or bonding individually manufactured scintillator and image sensor in various processes (eg, physical compression using a fixing device/jig, OCA) Compared to (laminating using Optically Clear Adhesive, bonding using epoxy/silicone, etc.), high-sensitivity and high-resolution images can be obtained with a low dose. In addition, the radiation detector structure of the present invention can be implemented as a front irradiation type or a rear irradiation type in the radiation direction, and by making the integrated structure coated with the substrate and the scintillator have a flat, curved, or flexible structure, various radiation A detector structure may be provided.

As described above, in the present invention, specific matters such as specific components, etc., and limited embodiments and drawings have been described, but these are only provided to help a more general understanding of the present invention, and the present invention is not limited to the above embodiments. , various modifications and variations will be possible without departing from the essential characteristics of the present invention by those of ordinary skill in the art to which the present invention pertains. Therefore, the spirit of the present invention should not be limited to the described embodiments, and all technical ideas with equivalent or equivalent modifications to the claims as well as the claims to be described later are included in the scope of the present invention. should be interpreted as

image sensor board 110
scintillator structure (120)
scintillator layer (122, 124, 126)

Claims (13)

an image sensor substrate having a plurality of pixel sensors in the form of an array; and
It is directly laminated and dried on the image sensor substrate in the form of a paste, is formed integrally with the image sensor substrate, and includes a scintillator structure for converting into visible light by radiation,
As the radiation irradiated toward the front or rear surface of the scintillator structure passes through the image sensor, visible light is generated from the scintillation material of the scintillator structure, and the image sensor generates an electrical signal proportional to the visible light in each pixel. Reading radiation detector. According to claim 1,
The method of direct lamination of the scintillator structure includes a screen printing or spray coating method using a scintillator paste mixed with a scintillator powder and a binder. According to claim 1,
The method of direct lamination of the scintillator structure includes a screen printing or spray coating method using a scintillator paste obtained by precipitation after mixing the scintillator powder with a binder. According to claim 1,
The scintillator structure comprises a single scintillator layer having a uniform average scintillator particle size. According to claim 1,
The scintillator structure includes a double scintillator layer having an average scintillator particle size different from each other. 6. The method of claim 5,
The double scintillator layer is a radiation detector in which the particle size of the image sensor side is larger than the particle size of the opposite side. 6. The method of claim 5,
The double scintillator layer is a radiation detector in which the particle size of the image sensor side is smaller than the particle size of the opposite side. According to claim 1,
The image sensor substrate is a radiation detector in which the plurality of pixel sensors are formed on a flat, curved or flexible substrate. According to claim 1,
The image sensor substrate may include a glass substrate, a silicon substrate, a plastic substrate, a carbon substrate, an aluminum substrate, or an optical fiber substrate having the plurality of pixel sensors. According to claim 1,
The image sensor substrate includes an amorphous silicon-based photodiode (PD)-thin film transistor (TFT) array, or a crystalline silicon-based complementary metal oxide semiconductor (CMOS) or CCD (Charge Coupled Device) array on a predetermined substrate. Radiation detector included. According to claim 1,
The image sensor substrate, after the array is formed on the predetermined substrate, by etching or polishing the back surface of the predetermined substrate is a radiation detector made of a curved surface or flexible. According to claim 1,
The radiation detector further comprising a light absorber or light reflector directly laminated and dried on the image sensor substrate in the form of a paste. According to claim 1,
The radiation detector further comprising a light absorber or light reflector directly laminated and dried in the form of a paste on the scintillator structure.

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