KR20160134503A - Glass laminate and manufacturing method of electronic device - Google Patents

Abstract

The present invention relates to a glass laminate, which comprises: a supporting substrate provided with a supporting substrate and an inorganic layer having the inorganic layer arranged on the supporting substrate; and a glass substrate laminated on the inorganic layer to be delaminated. The Martens hardness of the inorganic layer is less than or equal to 3000 N/mm^2. Provided is the glass laminate, which can delaminate the glass substrate in an easy manner, after the treatment for a long period of time under high-temperature conditions.

Description

TECHNICAL FIELD [0001] The present invention relates to a glass laminate and a method for manufacturing the same,

The present invention relates to a glass laminate and a method of manufacturing an electronic device.

In recent years, the thickness and weight of electronic devices (electronic devices) such as solar cells (PV), liquid crystal panels (LCD), and organic EL panels (OLED) . On the other hand, if the strength of the glass substrate is insufficient due to the thinning, the handling property of the glass substrate is lowered in the manufacturing process of the electronic device.

Therefore, recently, in order to cope with the above problem, a laminate in which a glass substrate is laminated on an inorganic thin film of a supporting glass provided with an inorganic thin film is prepared, a device is produced on a glass substrate of the laminate, A method of separating a glass substrate from a laminate has been proposed (Patent Document 1).

Japanese Patent Application Laid-Open No. 2011-184284

In recent years, with the demand for high performance of electronic devices, it has been desired to carry out processing under higher temperature conditions at the time of manufacturing electronic devices.

The inventor of the present invention has found that when a laminate specifically disclosed in Patent Document 1 is used and subjected to treatment under high temperature conditions (for example, 400 DEG C or higher), the glass substrate can not be peeled off from the laminate after the treatment . In this mode, there arises a problem that after the device is manufactured under high temperature conditions, the glass substrate on which the device is formed can not be peeled off from the laminate.

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and it is an object of the present invention to provide a glass laminate capable of easily peeling off a glass substrate even after a long time treatment under a high temperature condition.

Means for Solving the Problems The present inventors have conducted intensive studies to achieve the above object, and as a result, they have found that a glass substrate can be easily peeled off by forming a specific inorganic layer on a support substrate, thereby completing the present invention.

That is, the present invention provides the following [1] to [5].

[1] A semiconductor device comprising: a support substrate provided with a support substrate and an inorganic layer having an inorganic layer disposed on the support substrate; and a glass substrate which is peelably laminated on the inorganic layer, wherein the Martens hardness of the inorganic layer is Lt; RTI ID = 0.0 > N / mm2. ≪ / RTI >

[2] The glass laminate according to [1], wherein the water content in the inorganic layer is 1.5 atomic% or more.

[3] The glass laminate according to [1] or [2], wherein the inorganic layer has a thickness of 70 nm or less.

[4] The glass laminate according to any one of [1] to [3], wherein the inorganic layer contains a metal fluoride.

[5] An electronic device member is provided on a surface of the glass substrate opposite to the inorganic layer side of the glass laminate according to any one of [1] to [4] A separation step of separating the support substrate having the inorganic layer from the laminate provided with the electronic device member to obtain an electronic device having the glass substrate and the electronic device member; Wherein the step of forming the electronic device comprises the steps of:

According to the present invention, it is possible to provide a glass laminate capable of easily peeling off a glass substrate.

1 is a schematic cross-sectional view showing an embodiment of a glass laminate according to the present invention.
2 (A) and 2 (B) are schematic cross-sectional views sequentially showing respective steps in a preferred embodiment of the method for manufacturing an electronic device of the present invention.

Best Mode for Carrying Out the Invention Hereinafter, suitable forms of the glass laminate of the present invention and the method of manufacturing an electronic device will be described with reference to the drawings. However, the present invention is not limited to the following embodiments, Various modifications and substitutions can be made to the shape.

Hereinafter, first, a suitable form of the glass laminate will be described in detail, and then a suitable form of the method for manufacturing an electronic device using the glass laminate will be described in detail.

[Glass laminate]

1 is a schematic cross-sectional view showing an embodiment of a glass laminate according to the present invention.

1, the glass laminate 10 has a support substrate 16 having an inorganic layer including a support substrate 12 and an inorganic layer 14, and a glass substrate 18. [

In the glass laminate 10, the first major surface 14a (the surface of the inorganic layer 14 opposite to the side of the support substrate 12) of the inorganic layer 14 of the support substrate 16 having the inorganic layer, And the first main surface 18a of the glass substrate 18 (the surface of the glass substrate 18 on the side of the inorganic layer 14) are laminated to form a support substrate 16 having an inorganic layer, (18) are laminated so as to be peelable.

That is, one side of the inorganic layer 14 is fixed to the layer of the supporting substrate 12, and the other side thereof is in contact with the first main surface 18a of the glass substrate 18, The interface with the glass substrate 18 is in close contact so as to be peelable. In other words, the inorganic layer 14 has easiness of peeling off from the first main surface 18a of the glass substrate 18.

In the present invention, the fixation and the peelable adhesion are different from each other in the peel strength (i.e., the stress required for peeling), and the fixation means that the peel strength is higher than the adhesion. Specifically, the peel strength at the interface between the inorganic layer 14 and the support substrate 12 is greater than the peel strength at the interface between the inorganic layer 14 and the glass substrate 18.

The term "peelably adhered" means peelable and peelable without causing peeling of the fixed surface. That is, when the operation for separating the glass substrate 18 and the support substrate 12 from each other is performed in the glass laminate 10, the contact between the contact surface (the interface between the inorganic layer 14 and the glass substrate 18) And is not peeled off from the fixed surface. Therefore, when the operation of separating the glass laminate 10 into the glass substrate 18 and the support substrate 12 is performed, the glass laminate 10 includes the glass substrate 18 and the support substrate 16 provided with the inorganic layer, Lt; / RTI >

Even in such a case, when the glass laminate 10 is subjected to a treatment under a high temperature condition (for example, 400 占 폚 or more), the peeling strength at the interface between the inorganic layer 14 and the glass substrate 18, The peel strength of the interface between the layer 14 and the support substrate 12 is increased to the same level as the peel strength of the interface between the layer 14 and the support substrate 12, and as a result, the peeling of the glass substrate 18 from the glass laminate 10 may become difficult.

However, in the present invention, when the glass substrate 18 is peeled off after the glass laminate 10 is subjected to the treatment under a high temperature condition by setting the Martens hardness of the inorganic layer 14 to 3000 N / The glass substrate 18 can be easily peeled off from the glass laminate 10 by causing cohesion failure in the inorganic layer 14 itself at the time of peeling (see Fig. 2 (B)).

Hereinafter, the support substrate 16 and the glass substrate 18 provided with the inorganic layer constituting the glass laminate 10 will be described in detail and then the details of the manufacturing procedure of the glass laminate 10 .

[Supporting substrate having inorganic layer]

The support substrate 16 having an inorganic layer has a support substrate 12 and an inorganic layer 14 (disposed) on the surface thereof. The inorganic layer 14 is disposed on the outermost side of the support substrate 16 having the inorganic layer so as to be in peelable contact with the glass substrate 18 to be described later.

Hereinafter, the shapes of the support substrate 12 and the inorganic layer 14 will be described in detail.

≪ Support substrate &

The supporting substrate 12 has a first main surface and a second main surface and is reinforced by supporting the glass substrate 18 in cooperation with the inorganic layer 14 disposed on the first main surface, Defects, or the like of the glass substrate 18 at the time of manufacturing the electronic device member in the process of manufacturing the device-use member.

As the supporting substrate 12, for example, a metal plate such as a glass plate, a plastic plate, an SUS plate, or the like is used. The supporting substrate 12 is preferably made of a material having a smaller coefficient of linear expansion than that of the glass substrate 18 when the member forming step involves heat treatment and is preferably formed of the same material as the glass substrate 18 More preferably, the supporting substrate 12 is a glass plate. In particular, the support substrate 12 is preferably a glass plate including a glass material such as a glass substrate 18. [

The thickness of the support substrate 12 may be thicker or thinner than that of the glass substrate 18 described later. Preferably, the thickness of the support substrate 12 is selected based on the thickness of the glass substrate 18, the thickness of the inorganic layer 14, and the thickness of the glass laminate 10 described below.

For example, if the current member forming process is designed to process a substrate having a thickness of 0.5 mm and the sum of the thickness of the glass substrate 18 and the thickness of the inorganic layer 14 is 0.1 mm, The thickness is 0.4 mm. The thickness of the support substrate 12 is usually 0.2 to 5.0 mm.

When the support substrate 12 is a glass plate, the thickness of the glass plate is preferably 0.08 mm or more for ease of handling and difficulty in breaking. It is preferable that the thickness of the glass plate is 1.0 mm or less since it is desirable that the rigidity to bend properly without breaking after peeling off after formation of the electronic device member is desired.

The difference in average linear expansion coefficient (hereinafter simply referred to as "average linear expansion coefficient") at 25 to 300 ° C between the support substrate 12 and the glass substrate 18 is preferably 500 × 10 ^-7 / ° C or less, More preferably 300 x 10 < ^-7 > / DEG C or less, and further preferably 200 x 10 < ^-7 > When the difference is too large, there is a fear that the glass laminate 10 is severely bent at the time of heating and cooling in the member forming process. This problem can be suppressed from occurring when the material of the glass substrate 18 and the material of the support substrate 12 are the same.

<Inorganic layer>

The inorganic layer 14 is a layer which is disposed (fixed) on the main surface of the support substrate 12 in the glass laminate 10 and is in direct contact with the first main surface 18a of the glass substrate 18. [

As described above, in the present invention, the Martens hardness of the inorganic layer 14 is set to 3000 N / mm 2 or less. In addition, the Martens hardness (ISO 14577 2002) is the hardness measured under the load of the test load and is obtained from the value of the load-indentation depth curve at the time of load increase.

As a result, even when the glass substrate 18 is peeled from the glass laminate 10 after the glass laminate 10 is subjected to the treatment under a high temperature condition (for example, 400 ° C or more) The glass substrate 18 can be easily peeled from the glass laminate 10 by causing cohesion failure in the relatively weak inorganic layer 14 (see FIG. 2 (B)). That is, the peelability is excellent.

Residues of the coagulated and broken inorganic layer 14 may adhere to the first main surface 18a of the peeled glass substrate 18. However, by forming the inorganic layer 14 as a thin film, And no practical problem occurs.

The martens hardness of the inorganic layer 14 is preferably 2800 N / mm 2 or less, and more preferably 2500 N / mm 2 or less. On the other hand, the lower limit is not particularly limited, but is, for example, 200 N / mm &lt; 2 &gt; or more from the viewpoint of preventing the inorganic layer 14 from being too weak.

Further, by increasing the moisture concentration of the inorganic layer 14, the fragility can be easily maintained even after the treatment at a high temperature condition (for example, 400 DEG C or more) The peelability becomes better.

Therefore, the water concentration of the inorganic layer 14 is preferably 1.5 atomic% or more, more preferably 2.0 atomic% or more, and further preferably 2.2 atomic% or more. On the other hand, the upper limit is not particularly limited, but is 10 atom% or less, for example, from the viewpoint that the structure of the inorganic layer 14 is difficult to collapse.

The method of measuring the water concentration of the inorganic layer 14 in the present invention will be described in detail in the following [Examples].

The surface roughness Ra of the first main surface 14a of the inorganic layer 14 is preferably 2.0 nm or less, more preferably 1.2 nm or less. The lower limit value is not particularly limited, but is, for example, more than 0 nm. In the above range, the adhesion with the glass substrate 18 is improved, the positional deviation of the glass substrate 18 can be further suppressed, and the peeling property of the glass substrate 18 is also superior.

Ra is measured according to JIS B 0601 (revised 2001).

Further, as described above, residues of the coagulated and broken inorganic layer 14 may adhere to the first main surface 18a of the glass substrate 18. The deposition amount of the residue is preferably as the inorganic layer 14 is thinner.

Therefore, the thickness of the inorganic layer 14 is preferably 70 nm or less, more preferably 50 nm or less, and further preferably 30 nm or less. On the other hand, the lower limit is not particularly limited, but is, for example, 5 nm or more.

The inorganic layer 14 is shown as a single layer in Fig. 1, but may be a laminate of two or more layers. In the case of two or more layers, the composition may be different for each layer. In this case, the &quot; thickness of the inorganic layer &quot; means the total thickness of all the layers.

1, the inorganic layer 14 is provided on the entire one main surface of the support substrate 12, but it is preferable that the inorganic layer 14 be provided on one main surface of the support substrate 12 As shown in Fig.

The inorganic layer 14 preferably contains an F-containing inorganic layer containing F. The inorganic layer 14 may be composed of only the F-containing inorganic layer or plural layers containing an inorganic layer other than the F-containing inorganic layer. When the inorganic layer 14 is a plurality of layers, the position of the F-containing inorganic layer in the thickness direction of the inorganic layer 14 is not particularly limited. However, the position of the F-containing inorganic layer in contact with the first main surface 18a of the glass substrate 18 It is preferable to be the outermost layer.

It is more preferable that the F-containing inorganic layer contained in the inorganic layer 14 contains at least one selected from the group consisting of a metal fluoride and a fluorine doped metal oxide. The metal fluoride and the fluorine doped metal oxide may be used singly or in combination of two or more kinds.

Examples of the fluorine-doped metal oxide include fluorine-doped tin oxide, fluorine-doped zinc oxide, fluorine-doped titanium oxide, fluorine-doped aluminum oxide, fluorine-doped silicon oxide and fluorine-doped quartz. .

Although the composition of the metal fluoride is not particularly limited, the alkali metal, alkaline earth metal, Sc, Y, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, Ga, In, and lanthanoid.

Examples of the alkali metal include Li, Na, K, Rb and Cs.

Examples of the alkaline earth metals include Mg, Ca, Sr, and Ba.

The lanthanide is La to Lu and includes, for example, La, Ce, Pr, Nd, Pm, Sm and the like.

More specifically, as the metal fluoride, for example, a metal such as RF, R'F ₂ , ScF ₃ , YF ₃ , VF ₃ , CrF ₃ , MnF ₂ , FeF ₃ , CoF ₂ , NiF ₂ , CuF ₂ , ZnF ₂ , ₃ , GaF ₃ , InF ₃ and LF ₃ . Here, R is an alkali metal, R 'is an alkaline earth metal, and L is a lanthanoid.

The metal fluoride may be partially oxidized.

It is preferable that the inorganic layer 14 contains at least a metal fluoride because the metal fluoride is often fragile. More specifically, the total content of the metal fluoride with respect to the total amount of the inorganic layer 14 is preferably 50% by mass or more, more preferably 55% by mass or more, and further preferably 60% by mass or more. The upper limit is not particularly limited, but is preferably 95 mass% or less, more preferably 90 mass% or less, further preferably 85 mass% or less.

When the concentration of oxygen (O) introduced during the formation of the inorganic layer 14 is increased to a certain degree in the case where the inorganic layer 14 contains the metal fluoride, The peelability of the inorganic layer 14 due to cohesive failure itself becomes better.

Therefore, when the inorganic layer 14 contains a metal fluoride, the oxygen concentration in the inorganic layer 14 is preferably 1.5 atomic% or more, more preferably 2.5 atomic% or more, and more preferably 5.5 atomic% or more , And particularly preferably at least 8.0 atom%. On the other hand, the upper limit is preferably 20.0 atomic% or less, for example.

That is, when the inorganic layer 14 contains a metal fluoride, examples of the component other than the metal fluoride include a metal oxide. The metal oxide may be at least one selected from the group consisting of alkali metals, alkaline earth metals, Sc, Y, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, Ga, In and lanthanides It is preferable to include one species.

The total content of the metal oxide with respect to the total amount of the inorganic layer 14 is preferably 5% by mass or more, more preferably 10% by mass or more, and still more preferably 15% by mass or more. The upper limit is not particularly limited, but is preferably 50% by mass or less, more preferably 45% by mass or less, still more preferably 35% by mass or less.

&Lt; Manufacturing method of supporting substrate having inorganic layer >

As a method for forming the inorganic layer 14 on the support substrate 12, a vapor deposition method or a sputtering method under specific conditions can be suitably used.

In the sputtering method, generally, a direct current high voltage is applied between a substrate and a target while an inert gas such as Ar gas is introduced into the vacuum, and the ionized Ar collides with the target to form a target material that is repelled by flying Method.

In the sputtering method of the present invention, it is preferable to introduce oxygen (O ₂ ) gas together with an inert gas. Thus, for example, in the case of forming the inorganic layer 14 containing a metal fluoride, oxygen is introduced into the inorganic layer 14, and the oxygen concentration becomes high. As described above, if the oxygen concentration of the inorganic layer 14 increases to a certain degree, the peelability after treatment under high temperature conditions becomes better.

In the sputtering method of the present invention, the volume flow rate ratio of the oxygen gas and the inert gas (oxygen gas / inert gas) is preferably 0.005 to 0.25, more preferably 0.01 to 0.10.

Examples of the inert gas include argon (Ar) gas, nitrogen (N ₂ ) gas, and the like.

After the inorganic layer 14 is formed, the first main surface 14a of the inorganic layer 14 may be subjected to a hydrophilic treatment such as alkali treatment, plasma treatment, UV treatment, or the like. After the alkali treatment, it is preferable to rinse with pure water and subsequently to dry. After the hydrophilic treatment is performed on the inorganic layer 14, it is preferable that the glass substrate 18 is laminated as short as possible.

In addition, even if the surface of the inorganic layer 14 is subjected to a cutting process in order to control the surface property (for example, surface roughness Ra) of the inorganic layer 14 formed on the support substrate 12 Examples of such treatments include polishing, ion sputtering, and the like.

[Glass substrate]

The type of the glass substrate 18 may be a general one, and examples thereof include glass substrates for display devices such as LCDs and OLEDs. The glass substrate 18 is excellent in chemical resistance and moisture permeability, and has a low heat shrinkage ratio. The coefficient of thermal expansion specified in JIS R 3102 (revised in 1995) is used as an index of the heat shrinkage ratio.

The glass substrate 18 is obtained by melting a glass raw material and shaping the molten glass into a plate. For example, a float method, a fusion method, a slot down-draw method, a pull-call method, a lubrication method, or the like is used. Particularly, a glass substrate having a small thickness can be obtained by heating the glass molded into a plate shape once, heating it at a molding temperature, and stretching it by means of drawing or the like (thinning method) (Reedrow method).

The glass of the glass substrate 18 is not particularly limited, but an alkali-free borosilicate glass, borosilicate glass, soda lime glass, high silica glass, and other oxide-based glass containing silicon oxide as a main component can also be used. As the oxide-based glass, glass having a silicon oxide content of 40 to 90 mass% in terms of oxide is preferable.

As the glass for the glass substrate 18, glass suitable for the kind of device and its manufacturing process is employed. For example, a glass substrate for a liquid crystal panel includes a glass (alkali-free glass) substantially free of an alkali metal component from the viewpoint that elution of an alkali metal component easily affects liquid crystal Earth metal components are included). As described above, the glass of the glass substrate 18 is appropriately selected based on the kind of the applied device and the manufacturing process thereof.

The thickness of the glass substrate 18 is not particularly limited but is preferably 0.8 mm or less, preferably 0.3 mm or less, more preferably 0.15 mm or less, for example, from the viewpoint of reducing the thickness and / or weight of the glass substrate 18 mm or less. If it is more than 0.8 mm, it may not be possible to satisfy the demand for thinning and / or lightening the glass substrate 18. When the thickness is 0.3 mm or less, it is possible to impart good flexibility to the glass substrate 18. [ When the thickness is 0.15 mm or less, the glass substrate 18 can be rolled up. The thickness of the glass substrate 18 is preferably 0.03 mm or more because the glass substrate 18 can be easily manufactured and the glass substrate 18 can be easily handled.

The glass substrate 18 may include two or more layers, and in this case, the materials for forming the respective layers may be the same or different materials. In this case, &quot; thickness of glass substrate &quot; means the total thickness of all layers.

In the glass laminate 10, it is preferable that the first main surface 14a of the inorganic layer 14 and the first main surface 18a of the glass substrate 18 are in direct contact with each other. That is, it is preferable that the inorganic thin film layer is not provided on the first main surface 18a (the surface on the inorganic layer 14 side) of the glass substrate 18, and in particular, the inorganic thin film layer including the metal fluoride is not provided .

When a layer containing, for example, a metal fluoride is provided on the first main surface of the glass substrate, the adhesion between the glass substrate with a metal fluoride layer and the support substrate provided with the inorganic layer deteriorates after the high temperature treatment, It can not be used as a glass laminate because it peels off spontaneously.

[Process for producing glass laminate]

The production method of the glass laminate 10 is not particularly limited, but specifically, the support substrate 16 having the inorganic layer and the glass substrate 18 are laminated under an atmospheric pressure environment, Method. It is preferable that the support substrate 16 provided with the inorganic layer and the glass substrate 18 are in close contact with each other by being pressed by a roll or a press. Bubbles mixed in between the support substrate 16 having the inorganic layer and the glass substrate 18 can be relatively easily removed by pressing by roll or press, which is preferable.

The vacuum lamination method or the vacuum press method is more preferable because it suppresses entrainment of bubbles and secures good adhesion. By pressing under vacuum, bubbles do not grow by heating even when minute bubbles remain, and there is an advantage that it is difficult to cause distortion defects.

When the support substrate 16 having an inorganic layer and the glass substrate 18 are peelably contacted with each other, the surface of the inorganic layer 14 and the glass substrate 18 on the side where the glass substrate 18 is in contact with each other is cleaned sufficiently, It is preferable to laminate in a high environment.

The obtained glass laminate 10 may be subjected to treatment under a high temperature condition of, for example, 400 DEG C or higher. The upper limit of the temperature condition is not particularly limited, but is usually 700 ° C or lower. The glass laminate 10 can be used for various purposes, and includes, for example, a panel for a display device, a PV, a thin-film secondary battery, a semiconductor wafer having a circuit formed on a surface thereof, . Further, in this use, the glass laminate 10 is often exposed (for example, 10 minutes or longer) under high temperature conditions (for example, 400 ° C or more).

Here, the display device panel includes an LCD, an OLED, an electronic paper, a plasma display panel, a field emission panel, a quantum dot LED panel, a MEMS (Micro Electro Mechanical Systems) shutter panel, and the like.

[Electronic device and manufacturing method thereof]

Next, a preferred embodiment of the electronic device and its manufacturing method will be described in detail.

2 (A) and 2 (B) are schematic cross-sectional views sequentially showing respective steps in a preferred embodiment of the method for manufacturing an electronic device according to the present invention, wherein FIG. 2 (A) , And FIG. 2 (B) shows a separation step. That is, the method for manufacturing an electronic device of the present invention includes a member forming step and a separating step.

Hereinafter, the materials used in each step and the order thereof will be described in detail with reference to Figs. 2 (A) and 2 (B). First, the member forming process will be described in detail.

[Member forming process]

The member forming step is a step of forming a member for an electronic device on a glass substrate in a glass laminate.

More specifically, as shown in Fig. 2A, the electronic device member 20 is formed on the second main surface 18b of the glass substrate 18, (22).

First, the electronic device member 20 used in this process will be described in detail, and the sequence of subsequent steps will be described in detail.

&Lt; Member for electronic device (functional element) >

The member 20 for the electronic device is a member formed on the second main surface 18b of the glass substrate 18 and constituting at least a part of the electronic device. More specifically, examples of the member 20 for an electronic device include members used for a display device panel, a solar cell, a thin-film secondary battery, an electronic part such as a semiconductor wafer on which a circuit is formed, and the like. The display panel includes a liquid crystal panel, an organic EL panel, a plasma display panel, a field emission panel, and the like.

For example, as a member for a solar cell, in a silicon type, a transparent electrode such as tin oxide of a positive electrode, a silicon layer represented by a p layer / an i layer / an n layer, and a metal of a negative electrode, Dye-sensitized type, quantum dot type, and the like.

As a member for a thin film secondary battery, in a lithium ion type, a transparent electrode such as a metal or a metal oxide of a positive electrode and a negative electrode, a lithium compound of an electrolyte layer, a metal of a current collecting layer, a resin as a sealing layer, Various members corresponding to nickel-nickel-plated, polymer-type, ceramics-electrolyte-type, and the like.

Examples of the electronic component member include a metal of a conductive portion, silicon oxide and silicon nitride of an insulating portion in a CCD or a CMOS, and various sensors such as a pressure sensor and an acceleration sensor, a rigid printed substrate, a flexible printed substrate, Various members corresponding to substrates and the like.

&Lt; Sequence of process >

The method of manufacturing the laminated body 22 having the above-described electronic device member is not particularly limited, and may be performed by a conventionally known method depending on the type of the constituent member of the electronic device member, 18a and 18b, the electronic device member 20 is formed.

The electronic device member 20 is not limited to the entirety of a member finally formed on the second main surface 18b of the glass substrate 18 (hereinafter referred to as the "whole member"), Quot; partial member &quot;). The glass substrate having the partial members may be a glass substrate (corresponding to an electronic device described later) provided with the entire members in the subsequent steps. Further, in the glass substrate provided with the entire member, another electronic device member may be formed on the peeling surface (first main surface) thereof. Further, it is also possible to manufacture the electronic device by assembling the laminate having the entire member, then peeling the support substrate 16 having the inorganic layer from the laminate having the entire member. Further, the electronic device is assembled by using two laminated bodies having the entire members, and then the supporting substrate 16 provided with the two inorganic layers is peeled from the laminated body having the entire members, May be produced.

For example, in the case of manufacturing an OLED, in order to form an organic EL structure on the surface of the second main surface 18b of the glass substrate 18, a transparent electrode is formed, and further a transparent electrode is formed A hole injection layer, a hole transporting layer, a light emitting layer, an electron transporting layer, and the like are deposited on the surface, a back electrode is formed, and sealing is performed using a sealing plate. Specific examples of the layer formation and the treatment include a film forming treatment, a vapor deposition treatment, and an adhesion treatment of a sealing plate.

The manufacturing method of the TFT-LCD is, for example, a method in which a resist solution is used on the second main surface 18b of the glass substrate 18 of the glass laminate 10 and a general film formation method such as a CVD method and a sputtering method A TFT forming step of forming a thin film transistor (TFT) by patterning on a metal film and a metal oxide film formed on the glass substrate 18 of the glass laminate 10, A CF forming step of forming a color filter CF by using the transparent conductive film to form a pattern, and a bonding step of laminating a device substrate having a TFT and a device substrate having a CF.

In the TFT forming step and the CF forming step, a TFT or CF is formed on the second main surface 18b of the glass substrate 18 by using a well-known photolithography technique or an etching technique. At this time, a resist solution is used as a coating liquid for pattern formation.

Further, the second main surface 18b of the glass substrate 18 may be cleaned before forming the TFT or CF, if necessary. As the cleaning method, well-known dry cleaning or wet cleaning can be used.

In the bonding step, a liquid crystal material is injected between a laminated body including a TFT and a laminated body provided with CF to laminate. As a method of injecting the liquid crystal material, for example, there are a reduced pressure injection method and a dropping injection method.

Further, in the member forming step, for example, treatment under a high temperature condition of 400 DEG C or higher is performed.

[Separation Process]

In the separation step, the support substrate 16 provided with the inorganic layer is peeled off from the layered product 22 provided with the electronic device member obtained in the member formation step, and the electronic device member 20 and the glass substrate 18 are peeled off, (A glass substrate provided with a member for an electronic device). That is, the laminate 22 having the electronic device member is separated into a support substrate 16 having an inorganic layer and an electronic device 24 (glass substrate having an electronic device member).

When the treatment under the high temperature condition is carried out in the member forming step which is the previous step, the peel strength at the interface between the inorganic layer 14 and the glass substrate 18 is higher than the peel strength at the interface between the inorganic layer 14 and the support substrate 12 The peeling strength of the interface between the substrate and the substrate is likely to be difficult to separate.

At this time, however, cohesive failure occurs in the inorganic layer 14, so that the laminate 22 provided with the electronic device member is separated into the support substrate 16 having the inorganic layer and the electronic device 24. [

The method for separating the laminate 22 provided with the electronic device member into the support substrate 16 having the inorganic layer and the electronic device 24 is not particularly limited. For example, it is possible to insert a sharp blade-like portion in the vicinity of the inorganic layer 14, to give a moment of peeling, and then to eject the mixed fluid of water and compressed air. Preferably, the laminated body 22 provided with the electronic device member is provided on the base plate so that the support substrate 12 side is on the upper side and the electronic device member 20 side is on the lower side, and the electronic device member 20 ) Side is vacuum-adsorbed on the surface of the platen (in the case where the supporting substrate is laminated on both surfaces thereof in order), the blade is first intruded under this condition. Thereafter, the support substrate 12 side is adsorbed by the plurality of vacuum adsorption pads, and the vacuum adsorption pad is raised in order from the vicinity of the position where the blade is inserted. As a result, cohesive failure occurs in the inorganic layer 14, and the support substrate 16 having the inorganic layer can be easily peeled off.

The peel strength at the time of peeling off the electronic device 24 is not particularly limited, but is preferably 2.0 N / 25 mm or less and more preferably 1.2 N / 25 mm or less in industrial viewpoint.

The peeling strength at the time of peeling off the electronic device 24 can be also referred to as the peeling strength at the time of peeling off the glass substrate 18. [

The electronic device 24 obtained by the above process is suitable for manufacturing a small-sized display device used in a mobile terminal such as a cellular phone, a smart phone, and a tablet PC. The display device is mainly an LCD or an OLED, and the LCD includes TN type, STN type, FE type, TFT type, MIM type, IPS type, VA type and the like. It can basically be applied to any of passive drive type and active drive type display devices.

A new glass substrate 18 may be laminated on a support substrate 16 having an inorganic layer separated in the above order to form a new glass laminate 10.

[ Example ]

Hereinafter, the present invention will be described in detail by way of examples and the like, but the present invention is not limited to these examples.

In the following Examples and Comparative Examples, a glass plate (length 100 mm, width 100 mm, plate thickness 0.2 mm, coefficient of linear expansion (38) 占 10 ^-7 / 占 폚) containing no alkali borosilicate glass, &Quot; AN100 &quot;) was used.

As a supporting substrate, a glass plate (100 mm long, 100 mm wide, 0.5 mm thick, and a linear expansion coefficient of 38 x 10 &lt; ^-7 &gt; / deg. C, product name "AN100" manufactured by Asahi Glass Co., Ltd.) containing an alkali-free borosilicate glass was used.

&Lt; Example 1 >

First, one main surface of the support substrate was cleaned pure, and then cleaned by alkali cleaning.

Subsequently, the RF sputtering method (room temperature film forming, film forming pressure: 3 mTorr, volume flow rate with O ₂ gas and Ar gas (O ₂ / Ar): 0.02, power density: 5.3 W / Cm ₂ ) to form a MgF ₂ -containing layer (corresponding to the inorganic layer) having a thickness of 20 nm to obtain a support substrate having an inorganic layer for the glass laminate A1.

The thickness of the inorganic layer was measured by a contact-type film thickness measuring instrument (hereinafter the same).

The composition of the inorganic layer (excluding impurities) was MgF ₂ : 69% by mass and MgO: 31% by mass. The composition of the inorganic layer was measured using an X-ray photoelectron spectrometer (PHI5000VersaProbe, manufactured by ULVAC Inc.) (hereinafter the same).

(Surface roughness (Ra))

The surface roughness (Ra) of the first main surface of the inorganic layer of the support substrate provided with the obtained inorganic layer was 0.4 nm. The surface roughness (Ra) was measured in accordance with JIS B 0601 (revised in 2001) (hereinafter the same) using AFM (model: L-trace (Nanonavi), Hitachi High-Technologies Corporation).

(Martens hardness)

The Martens hardness of the inorganic layer of the support substrate having the obtained inorganic layer was 1247 N / mm 2. The hardness of the Martens was measured by using a microhardness tester (PICODENTOR HM500, manufactured by FISCHER) under a load of 0.5 N / s and a creep of 5 seconds in accordance with ISO 14577 2002, (Hereinafter the same).

(Moisture concentration)

The moisture concentration of the inorganic layer of the support substrate provided with the obtained inorganic layer was 2.2 atomic%. The water concentration was measured by a high-resolution ERDA (High Resolution Elastic Recoil Detection Analysis (HR-ERDA)) method.

HRBS500 (manufactured by Kobe Seiko Co., Ltd.) was used for the measurement. In order to prevent electrification at the time of measurement, a carbon film of several nm was deposited on the surface (sample surface) of the inorganic layer as a sample.

N ⁺ ions of 480 keV were incident at an angle of 70 degrees with respect to the normal to the sample plane, and half-hydrogen ions were detected at a set scattering angle of 30 degrees.

Assuming that only carbon and hydrogen are present in the deposited carbon film, calibration was performed using the measured value of the hydrogen concentration base sample, and the hydrogen concentration distribution in the thickness direction was calculated.

In the calculation, it is assumed that the density of the deposited carbon film is 2.25 g / cm 3, the density of MgF ₂ is 3.15 g / cm 3, and the density of MgO is 3.58 g / cm 3.

Among the hydrogen concentration distributions calculated in the thickness direction, the average concentration of the region where the concentration was fixed without the influence of the deposited carbon film was defined as the water concentration of the inorganic layer (hereinafter the same).

(Oxygen concentration)

The oxygen concentration of the inorganic layer of the support substrate provided with the obtained inorganic layer was 15.8 atomic%. The oxygen concentration was measured by using an X-ray photoelectron spectrometer (PHI5000VersaProbe, manufactured by ULVAC Inc.) (hereinafter the same).

(Lamination property)

Subsequently, one main surface of the glass substrate was cleaned purely, and then cleaned by alkali cleaning. Subsequently, the first main surface of the inorganic layer of the support substrate provided with the inorganic layer and the first main surface of the glass substrate, which had been cleaned, were bonded by a vacuum press at room temperature to obtain a glass laminate A1.

In the obtained glass laminate A1, the support substrate provided with the inorganic layer and the glass substrate were in close contact with each other without generating bubbles, and no distorted defects were observed, and the smoothness was good.

(Peelability (550 DEG C))

Ten glass laminate A1 having a width of 25 mm and a length of 70 mm were prepared and subjected to heat treatment at 550 DEG C for 10 minutes in a nitrogen atmosphere. Subsequently, the glass substrate was peeled off using Autograph AG-20 / 50kNXDplus (manufactured by Shimadzu Corporation).

Specifically, a stainless steel knife having a thickness of 0.1 mm was inserted in the vicinity of the inorganic layer of the glass laminate A1 after the heat treatment to form a separation section, the glass substrate was completely fixed, and the support substrate was pulled, Peeling was carried out. The peeling speed was 30 mm / min.

As a result, it was possible to peel off the glass substrate without causing cracks in the supporting substrate or the glass substrate in all of the ten test samples.

At the time of peeling, the inorganic layer was cohesively broken. On the surface of the peeled glass substrate and the support substrate, adhesion of residues of the coagulated and broken inorganic layer was confirmed.

At this time, the peel strength of the test piece, from which the glass substrate could be peeled off after the heat treatment at 550 ° C, was 0.5 N / 25 mm. The point at which the load was detected was set to 0, and the peel strength at a position raised by 2.0 mm from the position was determined as a measured value (hereinafter the same).

(Peelability (600 DEG C))

Ten glass laminate A1 having a width of 25 mm and a length of 70 mm were prepared and subjected to a heat treatment at 600 占 폚 for 10 minutes in a nitrogen atmosphere. Subsequently, the glass substrate was peeled off in the same manner as described above.

As a result, it was possible to peel off the glass substrate without causing cracks in the supporting substrate or the glass substrate in all of the ten test samples.

&Lt; Example 2 >

First, one main surface of the support substrate was cleaned pure, and then cleaned by alkali cleaning.

Subsequently, a CaF ₂ -containing layer (corresponding to the inorganic layer) having a thickness of 30 nm was formed on one main surface of the cleaned support substrate by vapor deposition to obtain a support substrate having an inorganic layer for the glass laminate A2.

For the formation of the inorganic layer, a vacuum evaporator (SEC-16CM, manufactured by Showa Shin Kagaku Co., Ltd.) was used. The evaporation source used in the pellets of the CaF ₂ 10 ^- After evacuated to ⁵ Torr or less was subjected to the film formation at room temperature.

The composition of the inorganic layer (excluding the impurities) was 93% by mass of CaF _{2 and} 7% by mass of CaO.

(Surface roughness (Ra), martens hardness, moisture concentration and oxygen concentration)

Surface roughness (Ra), martens hardness, moisture concentration and oxygen concentration were measured for the inorganic layer of the support substrate provided with the obtained inorganic layer. The measurement results are shown in Table 1 below.

In the measurement of the moisture concentration, it was assumed that the density of CaF ₂ was 3.18 g / cm 3 and the density of CaO was 3.35 g / cm 3.

(Lamination property)

The first main surface of the inorganic layer of the support substrate having the inorganic layer and the first main surface of the glass substrate were bonded to each other in the same manner as in Example 1 to obtain a glass laminate A2.

In the obtained glass laminate A2, the support substrate provided with the inorganic layer and the glass substrate were in close contact with each other without generating air bubbles, and no distorted defects were observed, and the smoothness was good.

(Peelability)

With respect to the glass laminate A2, the peel strength was measured in the same manner as in Example 1, and the peelability was evaluated.

As a result, it was possible to peel off the glass substrate without causing cracks in the supporting substrate or the glass substrate in all of the ten test pieces after the heat treatment at 550 ° C, but after the heat treatment at 600 ° C, the cracks occurred in the five test pieces . Further, on the surface of the peeled glass substrate and the support substrate, adhesion of residues of the coagulated and broken inorganic layer was confirmed.

The peel strength after the heat treatment at 550 占 폚 was 0.4 N / 25 mm.

&Lt; Example 3 >

First, one main surface of the support substrate was cleaned pure, and then cleaned by alkali cleaning.

Subsequently, a CeF ₃ -containing layer (corresponding to the inorganic layer) having a thickness of 30 nm was formed on one main surface of the cleaned support substrate in the same manner as in Example 2 by vapor deposition to form an inorganic layer for the glass laminate A3 To obtain a supporting substrate.

The composition of the inorganic layer (excluding the impurities) was CeF ₃ : 94 mass% and CeO ₂ : 6 mass%.

(Surface roughness (Ra), martens hardness, moisture concentration and oxygen concentration)

Surface roughness (Ra), martens hardness, moisture concentration and oxygen concentration were measured for the inorganic layer of the support substrate provided with the obtained inorganic layer. The measurement results are shown in Table 1 below.

In the measurement of the moisture concentration, it was assumed that the density of CeF ₃ was 6.16 g / cm _{3 and} the density of CeO ₂ was 7.65 g / cm 3.

(Lamination property)

The first main surface of the inorganic layer of the support substrate having the inorganic layer and the first main surface of the glass substrate were bonded to each other in the same manner as in Example 1 to obtain a glass laminate A3.

In the obtained glass laminate A3, the supporting substrate having the inorganic layer and the glass substrate were in close contact with each other without generating air bubbles, and no distortion defects were observed, and the smoothness was good.

(Peelability)

With respect to the glass laminate A3, the peel strength was measured in the same manner as in Example 1, and the peelability was evaluated.

As a result, after the heat treatment at 550 ° C, the glass substrate could be peeled off without causing cracks in the supporting substrate or the glass substrate in all of the ten specimens, but cracking occurred in the four specimens after the heat treatment at 600 ° C . Further, on the surface of the peeled glass substrate and the support substrate, adhesion of residues of the coagulated and broken inorganic layer was confirmed.

The peel strength after the heat treatment at 550 占 폚 was 0.4 N / 25 mm.

&Lt; Comparative Example 1 &

First, one main surface of the support substrate was cleaned pure, and then cleaned by alkali cleaning.

Subsequently, a magnetron sputtering method (room temperature film forming, film forming pressure: 3 mTorr, volume flow ratio with O ₂ gas and Ar gas (O ₂ / Ar): 0.20, power density: 1.65 W / by ㎠), to form a CeO ₂ layer with a thickness of 30nm, to obtain a supporting substrate having an inorganic layer for glass laminate B1.

(Surface roughness (Ra) and Martens hardness)

The surface roughness (Ra) and the Martens hardness of the inorganic layer of the support substrate provided with the obtained inorganic layer were measured. The measurement results are shown in Table 1 below.

(Lamination property)

The first main surface of the inorganic layer of the support substrate having the inorganic layer and the first main surface of the glass substrate were bonded to each other in the same manner as in Example 1 to obtain a glass laminate B1.

In the obtained glass laminate B1, the supporting substrate having the inorganic layer and the glass substrate were in close contact with each other without generating air bubbles, had no distorted defects, and had good smoothness.

(Peelability)

With respect to the glass laminate B1, the peelability was evaluated in the same manner as in Example 1. As a result, even after any of the heat treatments at 550 deg. C and 600 deg. C, cracking occurred in all of the ten specimens. Therefore, the peeling strength could not be measured.

&Lt; Comparative Example 2 &

First, one main surface of the support substrate was cleaned pure, and then cleaned by alkali cleaning.

Subsequently, a magnetron sputtering method (room temperature film forming, film forming pressure: 3 mTorr, volume flow ratio with O ₂ gas and Ar gas (O ₂ / Ar): 0.20, power density: 1.65 W / by ㎠), forming a ZrO ₂ layer having a thickness of 20nm, to obtain a supporting substrate having an inorganic layer for glass laminate B2.

(Surface roughness (Ra) and Martens hardness)

The surface roughness (Ra) and the Martens hardness of the inorganic layer of the support substrate provided with the obtained inorganic layer were measured. The measurement results are shown in Table 1 below.

(Lamination property)

The first main surface of the inorganic layer of the supporting substrate having the inorganic layer and the first main surface of the glass substrate were bonded to each other in the same manner as in Example 1 to obtain a glass laminate B2.

In the obtained glass laminate B2, bubble generation and distorted defects were confirmed.

(Peelability)

With respect to the glass laminate B2, the peelability was evaluated in the same manner as in Example 1. As a result, even after any of the heat treatments at 550 占 폚 and 600 占 폚, all of the ten specimens were cracked. Therefore, the peeling strength could not be measured.

&Lt; Comparative Example 3 &

A MgF ₂ layer having a thickness of 30 nm was formed in the same procedure as in Example 1 except that only an Ar gas was used instead of a mixed gas of an O ₂ gas and an Ar gas to form an MgF ₂ layer having an inorganic layer for the glass laminate B 3 A support substrate was obtained.

(Surface roughness (Ra), martens hardness, moisture concentration and oxygen concentration)

Surface roughness (Ra), martens hardness, moisture concentration and oxygen concentration were measured for the inorganic layer of the support substrate provided with the obtained inorganic layer. The measurement results are shown in Table 1 below.

(Lamination property)

The first main surface of the inorganic layer of the support substrate having the inorganic layer and the first main surface of the glass substrate were bonded to each other in the same manner as in Example 1 to obtain a glass laminate B3.

In the obtained glass laminate B3, the support substrate provided with the inorganic layer and the glass substrate were in close contact with each other without generating bubbles, and no distorted defects were observed, and the smoothness was good.

(Peelability)

With respect to the glass laminate B3, the peelability was evaluated in the same manner as in Example 1. As a result, even after any of the heat treatments at 550 deg. C and 600 deg. C, cracking occurred in all of the ten specimens. Therefore, the peeling strength could not be measured.

&Lt; Comparative Example 4 &

First, one main surface of the support substrate was cleaned pure, and then cleaned by alkali cleaning.

Then, the main surface of one side of a support substrate cleaning, the magnetron sputtering process (heating temperature: 300 ℃, film forming pressure: 5mTorr, O volumetric flow rate of the _second gas and Ar gas (O ₂ / Ar): 0.10, power density: 4.9 W / cm 2), an ITO layer (indium tin oxide layer) having a thickness of 20 nm was formed to obtain a support substrate having an inorganic layer for the glass laminate B 4.

(Surface roughness Ra and martens hardness)

The surface roughness (Ra) and the Martens hardness of the inorganic layer of the support substrate provided with the obtained inorganic layer were measured. The measurement results are shown in Table 1 below.

(Lamination property)

The first main surface of the inorganic layer of the support substrate having the inorganic layer and the first main surface of the glass substrate were bonded to each other in the same manner as in Example 1 to obtain a glass laminate B4.

In the obtained glass laminate B4, the support substrate provided with the inorganic layer and the glass substrate were in close contact with each other without generating bubbles, no distorted defects were observed, and the smoothness was good.

(Peelability)

The peelability of the glass laminate B4 was evaluated in the same manner as in Example 1, and even after any of the heat treatments at 550 占 폚 and 600 占 폚, cracking occurred in all of the ten specimens. Therefore, the peeling strength could not be measured.

The results of Examples 1 to 3 and Comparative Examples 1 to 4 are shown in Table 1 below.

In the column of &quot; lamination property &quot; in the following Table 1, &quot;? &Quot; is shown when the supporting substrate having the inorganic layer and the glass substrate are in close contact with each other without generating bubbles, &Quot; x &quot; is described when bubbles are generated to partially adhere to each other, and distorted defects are also confirmed. In practical terms, it is preferable that it is &quot;? &Quot;.

In the column of &quot; peelability &quot; in the following Table 1, &quot;? &Quot; is written when no breakage of the support substrate or the glass substrate occurs in all the test samples and the glass substrate can be peeled off, , &Quot; DELTA &quot; is written in the case where the glass substrate can be peeled without causing cracks in the support substrate or the glass substrate in the case where cracks have occurred in the remaining test pieces, and cracks have occurred in all the test pieces, &Quot; x &quot; is written. In practical terms, it is preferable that it is &quot;? &Quot;.

In the "moisture concentration" and "peel strength" in the following Table 1, "-" is described when the moisture concentration and the peel strength are not measured (measured).

As shown in Table 1, in Examples 1 to 3, in which the Martens hardness of the inorganic layer was 3000 N / mm 2 or less, the glass substrate could be easily peeled off even after treatment under high temperature conditions, and the peelability was good.

The peelability after treatment at 500 ° C was the same as in Examples 1 to 3, but the peelability after treatment at 600 ° C was higher than that in Examples 2 and 3 in Example 1 where the oxygen concentration of the inorganic layer was high Was better.

On the other hand, in Comparative Examples 1 to 4 in which the martens hardness of the inorganic layer was not less than 3000 N / mm 2, the peelability after treatment under high temperature conditions was insufficient.

<Example 4>

In this example, an OLED was manufactured using the glass laminate A1 prepared in Example 1 and before the heat treatment. The heat treatment temperature in the following process is 400 DEG C or higher.

More specifically, molybdenum was deposited on the second main surface of the glass substrate in the glass laminate A1 by the sputtering method, and the gate electrode was formed by etching using photolithography. Subsequently, a film of silicon nitride, intrinsic amorphous silicon, and n-type amorphous silicon is formed in this order on the second main surface side of the glass substrate provided with the gate electrode by the plasma CVD method. Subsequently, molybdenum is deposited by the sputtering method And a gate insulating film, a semiconductor element portion, and a source / drain electrode were formed by etching using a photolithography method. Subsequently, a silicon nitride film is further formed on the second main surface side of the glass substrate by the plasma CVD method to form a passivation layer, and thereafter, indium tin oxide is formed by sputtering and is then etched by photolithography , And a pixel electrode were formed.

Subsequently, 4,4 ', 4 "-tris (3-methylphenylphenylamino) triphenylamine was used as a hole injecting layer, and bis [(N-naphtho (4-methoxyphenyl) -N-phenyl] aminostyryl] is added to 8-quinolinol aluminum complex (Alq ₃ ) (BSN-BCN), and Alq ₃ as an electron transporting layer were formed in this order on the second main surface side of the glass substrate by sputtering. Subsequently, aluminum And another electrode was formed by etching using a photolithography method. Next, another glass substrate was bonded and sealed on the second main surface of the glass substrate on which the counter electrode was formed via an adhesive layer of an ultraviolet curing type . A glass laminate having an organic EL structure on a glass substrate obtained by the above procedure Corresponds to a laminate comprising a member for an electronic device.

Subsequently, the sealing member side of the laminate having the electronic device member was vacuum-adsorbed on the surface plate, and then a stainless steel blade having a thickness of 0.1 mm was inserted in the vicinity of the inorganic layer in the corner portion to separate , And an OLED panel (equivalent to an electronic device, hereinafter referred to as panel A) was obtained. An IC driver was connected to the prepared panel A and driven at normal temperature and pressure, and display irregularity was not observed in the driving area.

&Lt; Example 5 >

In this example, an LCD was manufactured using the glass laminate A1 prepared in Example 1 and before the heat treatment. The heat treatment temperature in the following process is 400 DEG C or higher.

Two pieces of the glass laminate A1 were prepared and molybdenum was first formed on the second main surface of the glass substrate in one glass laminate A1 by sputtering and the gate electrode was etched by photolithography . Subsequently, a film of silicon nitride, intrinsic amorphous silicon, and n-type amorphous silicon is formed in this order on the second main surface side of the glass substrate provided with the gate electrode by the plasma CVD method. Subsequently, molybdenum is deposited by the sputtering method And a gate insulating film, a semiconductor element portion, and a source / drain electrode were formed by etching using a photolithography method. Subsequently, a silicon nitride film is further formed on the second main surface side of the glass substrate by the plasma CVD method to form a passivation layer, and thereafter, indium tin oxide is formed by sputtering and is then etched by photolithography , And a pixel electrode were formed. Then, a polyimide resin solution was coated on the second main surface of the glass substrate on which the pixel electrode was formed by a roll coating method, and an alignment layer was formed by thermal curing to perform rubbing. The resulting glass laminate is referred to as glass laminate X1.

Subsequently, chromium was deposited on the second main surface of the glass substrate of the other glass laminate A1 by sputtering, and a light shielding layer was formed by etching using a photolithography method. Then, a color resist was applied to the second main surface side of the glass substrate on which the light shielding layer was formed by a die coating method, and a color filter layer was formed by photolithography and thermal curing. Subsequently, indium tin oxide was further formed on the second main surface side of the glass substrate by the sputtering method to form the counter electrode. Subsequently, an ultraviolet curable resin liquid was applied on the second main surface of the glass substrate provided with the counter electrode by a die coating method, and a columnar spacer was formed by photolithography and thermal curing. Then, a polyimide resin solution was applied on the second main surface of the glass substrate on which the columnar spacer was formed by a roll coating method, and an orientation layer was formed by thermal curing, and rubbing was performed. Subsequently, a sealing resin liquid was drawn in a frame shape on the second main surface side of the glass substrate by a dispenser method, and liquid crystal was dropped by a dispenser method in the frame. Then, using the above-described glass laminate X1, Were bonded to each other to obtain a laminate having an LCD panel by ultraviolet curing and thermal curing. Hereinafter, the laminate having the LCD panel is referred to as a laminate X2 having a panel.

Subsequently, in the same manner as in Example 4, the support substrate having the inorganic layers on both sides was separated from the layered body X2 having the panel, and the LCD panel B (including the substrate on which the TFT array was formed and the substrate on which the color filter was formed Equivalent to an electronic device).

When an IC driver was connected to the manufactured LCD panel B and driven at room temperature and normal pressure, display irregularity was not observed in the driving area.

The present application is based on Japanese Patent Application No. 2015-098383 filed on May 13, 2015, the contents of which are incorporated herein by reference.

10: Glass laminate
12: Support substrate
14: inorganic layer
14a: first main surface (surface of the inorganic layer opposite to the support substrate side)
16: Support substrate with inorganic layer
18: glass substrate
18a: first main surface (surface of inorganic substrate side of glass substrate)
18b: a second main surface (surface opposite to the inorganic layer side of the glass substrate)
20: Member for electronic device
22: laminated body having a member for an electronic device
24: Electronic device (glass substrate provided with member for electronic device)

Claims (5)

A support substrate having an inorganic layer having a support substrate and an inorganic layer disposed on the support substrate;
And a glass substrate which is peelably laminated on the inorganic layer,
Wherein the inorganic layer has a Martens hardness of 3000 N / mm 2 or less. The glass laminate according to claim 1, wherein the inorganic layer has a water concentration of 1.5 atomic% or more. The glass laminate according to claim 1 or 2, wherein the inorganic layer has a thickness of 70 nm or less. The glass laminate according to any one of claims 1 to 3, wherein the inorganic layer contains a metal fluoride. An electronic device member is formed on a surface of the glass substrate opposite to the inorganic layer side of the glass laminate according to any one of claims 1 to 4 and the laminate having the electronic device member A member forming step to be obtained,
A separation step of separating the support substrate having the inorganic layer from the laminate provided with the electronic device member and obtaining an electronic device having the glass substrate and the electronic device member
Wherein the step of forming the electronic device comprises the steps of:

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