KR20160104252A - Chemical mechanical polishing apparatus - Google Patents

Chemical mechanical polishing apparatus Download PDF

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Publication number
KR20160104252A
KR20160104252A KR1020150027000A KR20150027000A KR20160104252A KR 20160104252 A KR20160104252 A KR 20160104252A KR 1020150027000 A KR1020150027000 A KR 1020150027000A KR 20150027000 A KR20150027000 A KR 20150027000A KR 20160104252 A KR20160104252 A KR 20160104252A
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KR
South Korea
Prior art keywords
conditioner
polishing pad
pressing force
chemical mechanical
polishing
Prior art date
Application number
KR1020150027000A
Other languages
Korean (ko)
Inventor
채희성
Original Assignee
주식회사 케이씨텍
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Publication date
Application filed by 주식회사 케이씨텍 filed Critical 주식회사 케이씨텍
Priority to KR1020150027000A priority Critical patent/KR20160104252A/en
Publication of KR20160104252A publication Critical patent/KR20160104252A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention relates to a chemical mechanical polishing apparatus as a chemical mechanical polishing apparatus for performing a chemical mechanical polishing process of a wafer, which comprises: a polishing pad rotating while being in contact with a polished surface of a wafer in a chemical mechanical polishing process; a conditioner for reforming the surface of the polishing pad while rotating by pressurizing the polishing pad; and a weight sensor positioned outside the polishing pad to measure a pressurizing force of the conditioner. The chemical mechanical polishing apparatus can accurately introduce a condition that the pressurizing force is accurately introduced while elements of the conditioner are attached, by disposing the weight sensor outside the polishing pad and measuring the pressurizing force of the conditioner in a stopped state.

Description

{CHEMICAL MECHANICAL POLISHING APPARATUS}

The present invention relates to a chemical mechanical polishing apparatus, and more particularly, to a chemical mechanical polishing apparatus that more accurately introduces a conditioning load introduced by a conditioner that reforms a polishing pad during a chemical mechanical polishing process.

BACKGROUND ART In general, a chemical mechanical polishing (CMP) process is known as a standard process for polishing a surface of a wafer by relatively rotating between a wafer such as a wafer for manufacturing a semiconductor provided with a polishing layer and a polishing table.

1 is a view schematically showing a conventional chemical mechanical polishing apparatus. A polishing table 10 having a polishing pad 11 on its upper surface and a polishing head 10 mounted on the polishing head 11 to be polished and contacting the upper surface of the polishing pad 11 A conditioner 30 for finely cutting the surface of the polishing pad 11 by a predetermined pressing force so that the micropores formed on the surface of the polishing pad 11 come out to the surface; And a slurry supply unit 40 for supplying slurry to the surface through a slurry supply port 42.

The polishing table 10 is provided with a polishing pad 11 made of a polytecontact material on which the wafer W is polished and the rotary shaft 12 is rotationally driven to rotate.

The polishing head 20 includes a carrier head 21 which is located on the upper surface of the polishing pad 11 of the polishing platen 10 to grip the wafer W and a carrier head 21 which reciprocates by a constant amplitude And a polishing arm 22 for performing polishing.

The conditioner 30 presses the conditioning disk 31 against the polishing pad 11 while rotating the conditioning disk 31 so that a large number of foam micropores serving as a slurry in which a slurry containing a mixture of an abrasive and a chemical are not clogged on the surface of the polishing pad 11 The surface of the polishing pad 11 is finely cut to smoothly supply the slurry filled in the foam pores of the polishing pad 11 to the wafer W gripped by the carrier head 21. [

To this end, the conditioner 30 introduces a predetermined pressing force into the polishing pad 11 while rotating the conditioning disk 31 that contacts the polishing pad 11 during the conditioning process. The pressing force introduced by the conditioning disk 31 not only prevents the micro pores from being blocked by modifying the surface of the polishing pad 11 but also causes the polishing surface of the polishing pad 11, . Therefore, the pressing force introduced into the conditioning disk 31 must be accurately controlled.

However, since the pressing force for pressing the polishing pad 11 by the conditioner 30 is not accurately controlled to a predetermined value, the modifying efficiency of the polishing pad 11 is lowered and the height deviation of the polishing pad 11 is generated There has been a problem of causing a variation in the polishing thickness of the wafer W.

SUMMARY OF THE INVENTION The present invention aims at introducing more precisely the conditioning load introduced by a conditioner that reforms a polishing pad during a chemical mechanical polishing process in order to solve the problems as described above.

It is therefore an object of the present invention to improve the polishing quality of the wafer by accurately controlling the height deviation of the polishing pad while maintaining a high modification efficiency of the polishing pad during the chemical mechanical polishing process.

In order to achieve the above object, the present invention provides a chemical mechanical polishing apparatus for performing a chemical mechanical polishing process of a wafer, comprising: a polishing pad rotating in contact with a polishing surface of the wafer during a chemical mechanical polishing process; A conditioner for modifying the surface of the polishing pad while pressing the polishing pad while rotating; A load sensor positioned outside the polishing pad and measuring a pressing force of the conditioner; The present invention also provides a chemical mechanical polishing apparatus comprising:

This is because the conventional structure for measuring the load by the load cell built in the conditioner during the chemical mechanical polishing has an advantage that the conditioning load can be measured in real time but there is a problem that only the pressing force component can not be measured accurately in the reciprocating motion As described above, by placing the load sensor outside the polishing pad and measuring the pressing force of the conditioner in the stopped state, it is possible to precisely introduce the chemical mechanical polishing process under the condition that the pressing force is accurately introduced in a state in which the parts of the conditioner are completely fixed .

After the pressure force applied by the conditioner is measured by the load sensor located outside the polishing pad and the actual pressing force introduced into the conditioner by the pressing force measurement is checked to see whether the pressing force matches the predetermined pressing force, By modifying the pad, an accurate pressing force can be introduced into the polishing pad to improve the quality of the modification.

The pressing force measurement process of the conditioner may be performed by measuring the pressing force introduced into the conditioner with the load sensor while the conditioner is positioned on the load sensor at the time of the malfunction of the chemical mechanical polishing process on the wafer, Can be used to check for malfunction of the system.

The pressing force measurement step of the conditioner may include a step of measuring a pressing force introduced into the conditioner while the conditioner is positioned on the load sensor during a waiting time before starting the chemical mechanical polishing process on the wafer, Can be used to preliminarily check the normal operation of the conditioner, as measured by a load sensor.

Particularly, the present invention controls the pressing force applying unit introduced by the conditioner during the process of measuring the pressing force introduced by the conditioner by the load sensor, so that the pressing force introduced into the polishing pad during the chemical mechanical polishing process by the conditioner becomes a predetermined value Can be corrected. Accordingly, the present invention can obtain the effect that the pressing force for introducing the polishing pad by the conditioner can be accurately introduced according to the position of the polishing pad.

That is, the pressing force of the conditioner can be corrected by a pressing force to be introduced by the conditioner while the conditioner is positioned on the load sensor.

Meanwhile, the conditioner includes: an arm installed to be rotatable about an axis and extended to have a radial component of the polishing pad; A conditioning disk rotating in contact with the polishing pad and receiving a pressing force; And the conditioner is brought to the measurement position by the load sensor by the rotation of the arm so that the pressing force of the conditioner can be accurately measured by the load sensor located outside the polishing pad and the pressing force can be corrected.

The conditioning disk may be fixed to any one position of the arm and move to various positions of the polishing pad by reciprocating rotation of the arm. However, the conditioning disk may be installed to be movable along the arm, So that it is possible to obtain an advantageous effect that the distribution of the pressing force introduced into the polishing pad can be accurately introduced by a simple operation control.

The terms 'pressing force' and 'conditioning load' and similar terms in the present specification and claims are defined as forces introduced into the polishing pad through a conditioning disk.

According to the present invention, by providing a load sensor on the outside of the polishing pad and measuring the pressing force of the conditioner in a stationary state, the pressing force introduced into the polishing pad by the conditioner in a state in which the conditioner component is fully mounted can be accurately measured Can be obtained.

The pressing force measurement process of the conditioner as described above may be applied to check the pressing force error of the conditioner at the time of the malfunction of the chemical mechanical polishing process for the wafer and may be used to preliminarily check the normal operation of the conditioner, It is possible to obtain an effect of more accurately ensuring the operating condition of the conditioner during the mechanical polishing process.

Particularly, the present invention controls the pressing force applying unit introduced by the conditioner during the process of measuring the pressing force introduced by the conditioner by the load sensor, so that the pressing force introduced into the polishing pad during the chemical mechanical polishing process by the conditioner becomes a predetermined value Can be corrected. Accordingly, the present invention can obtain the effect that the pressing force for introducing the polishing pad by the conditioner can be accurately introduced according to the position of the polishing pad.

As such, the present invention can more accurately introduce the conditioning load introduced by the conditioner that reforms the polishing pad during the chemical mechanical polishing process, thereby reliably maintaining the modification efficiency of the polishing pad during the chemical mechanical polishing process, It is possible to obtain an advantageous effect of improving the polishing quality of the wafer by accurately controlling the height deviation of the wafer.

1 is a plan view showing the construction of a general chemical mechanical polishing apparatus,
Fig. 2 is a front view of Fig. 1,
3 is a plan view showing a configuration of a chemical mechanical polishing apparatus according to an embodiment of the present invention,
Fig. 4 is a perspective view showing the configuration of the conditioner and the load sensor of Fig. 3,
Fig. 5 is a view showing a pressing force variation position on the polishing pad of the conditioner of Fig. 3,
FIG. 6 is a flowchart sequentially showing control methods of the chemical mechanical polishing apparatus of FIG. 3;

Hereinafter, a chemical mechanical polishing apparatus 100 according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are designated by the same or similar reference numerals and the description thereof will be omitted for the sake of clarity of the present invention.

FIG. 3 is a plan view showing the construction of a chemical mechanical polishing apparatus according to an embodiment of the present invention, FIG. 4 is a perspective view showing the configuration of the conditioner and the load sensor of FIG. 3, Fig. 6 is a flowchart sequentially showing the control method of the chemical mechanical polishing apparatus of Fig. 3; Fig.

As shown in the drawing, a chemical mechanical polishing apparatus 100 according to an embodiment of the present invention is provided with a polishing table 100, which is coated on an upper surface of a polishing table and rotated (11d) in contact with a polishing surface of the wafer W during a chemical mechanical polishing process A polishing head 20 for rotating the wafer W while pressing the wafer W against the polishing pad 11 during a chemical mechanical polishing process and a polishing head 11 for rotating the conditioning disk 131 while pressing the polishing pad 11 A slurry supply section 40 for supplying slurry onto the polishing pad 11 to supply the slurry to the wafer W during the chemical mechanical polishing process; A control unit 120 for controlling the conditioner 130 on the basis of the pressing force measured by the load sensor 110 and a controller 120 for controlling the conditioner 130. The load sensor 110 measures a pressing force introduced by the conditioner 130 in a stopped state, To correct the pressing force And a pressure correction unit 140.

The polishing pad 11 is coated on the upper surface of the polishing platen 10 driven to rotate by a driving motor and a suitable material is selected according to the polishing surface of the wafer W. During the chemical mechanical polishing process, The polishing surface of the wafer W is polished while rotating together.

The polishing head 20 includes a carrier head 21 which is located on the upper surface of the polishing pad 11 of the polishing platen 10 and grasps the wafer W, And a polishing arm 22 that performs a reciprocating motion with a constant amplitude while rotating. In some cases, the polishing head 20 may perform a multistage chemical mechanical polishing process in a plurality of polishing pads 11 while moving in a state in which the wafer W is mounted.

The wafer W placed on the lower side is pressed against the polishing pad 11 while the polishing head 20 is rotationally driven by supplying air pressure to the pressure chamber provided in the polishing head 20 during the chemical mechanical polishing process, (W).

The slurry supply unit 40 supplies the slurry required for the chemical mechanical polishing process onto the polishing pad 11 through the supply port 42 to perform the chemical polishing of the wafer.

The conditioner 130 finely cuts the surface of the polishing pad 11 so that a large number of foam micropores serving as a slurry in which a slurry containing a mixture of an abrasive and a chemical are not blocked on the surface of the polishing pad 11, 11 to be supplied to the wafer W being polished from the lower side of the polishing head 20 smoothly.

The conditioner 130 includes an arm 135 which reciprocates in a reciprocating motion 35d about a hinge axis at an angle about the hinge axis and an arm 135 which is attached to the arm 135 and contacts the surface of the polishing pad 11, (Not shown).

The load sensor 110 is provided with a sensor for measuring a load or a pressure such as a load cell or a strain gage so that the pressing force acting on the conditioning disk 131 of the conditioner 130 is stopped from the outside of the polishing pad 11 . Preferably, the height of the load sensor 110 is located at the same height as the polishing pad 11.

The conditioner 130 rotates the arm 135 to move the conditioning disk 131 to the outside of the polishing pad 11 so that the load sensor 110 can be rotated about the hinge axis, The pressing actuator 138 for generating a pressing force on the conditioning disk 131 is caused to act downward. The load sensor 110 measures the pressing force acting on the conditioning disk 131 in a state where the conditioning disk 131 of the conditioner 130 is stopped and the load sensor 110 measures the pressing force acting on the conditioning disk 131 through the conditioning disk 131, Can be accurately measured.

The control unit 120 receives the measurement value in a state where the pressing load is applied to the load sensor 110 by operating the pressure actuator 138 in a state where the conditioning disk 131 is positioned on the load sensor 110 , And the control unit 120 compares the measured load with the predetermined conditioning load value.

The control unit 120 transmits a control command to the pressing force correcting unit 140 so as to correct the deviation of the conditioning load value actually operating and the conditioning load value determined for introduction.

The pressing force correcting unit 140 corrects the input value of the pressing actuator 138 in accordance with the control command received from the control unit 120 so that the actually acting conditioning load reaches the predetermined conditioning load value.

The conditioning load value corrected by the pressing force correcting unit 140 is measured by the load sensor 110 and transmitted to the control unit 120. The control unit 120 checks whether the corrected conditioning load value is correctly corrected, The control unit 120 sends a control command for correcting the deviation of the conditioning load value to the pressing force correction unit 140 when there is still a deviation between the predetermined conditioning load value and the actually acting conditioning load value. That is, the feedback control corrects the conditioning load value acting by the conditioner 130 so that the conditioning load value acting on the load sensor 140 works correctly.

The measurement by the load sensor 110 and the correction of the conditioning load by the control unit 120 may be performed for only one conditioning load. However, as shown in FIG. 5, when the conditioning disk 131 is reciprocatingly rotated The conditioning process can be performed by changing the pressing force at a plurality of points Pi while performing the measurement load by the load sensor 110 and the conditioning load by the control unit 120. [ It is possible.

This allows the conditioning disk 131 to introduce an accurate conditioning load into the polishing pad 11 when pressing the conditioning disk 131 with a single pressing force or with a varying pressing force on the polishing pad 11, It is possible to reduce the phenomenon that the polishing surface of the wafer is unevenly polished by the deviation of the surface height of the polishing pad 11 during the chemical mechanical polishing process while maintaining the reformed state of the wafer at a high level.

The operation principle of the chemical mechanical polishing apparatus 1 according to one embodiment of the present invention constructed as above will be described in detail with reference to FIG.

Step 1 : To preliminarily preliminarily check the pressing force applied to the polishing pad 11 through the conditioning disk 131 before starting the chemical mechanical polishing process, or to detect abnormal operation during the chemical mechanical polishing process, The conditioning disk 131 is moved onto the load sensor 110 located outside the polishing pad 11 at step S110 when it is necessary to check whether the pressing force of the polishing pad 130 is correctly introduced by a predetermined value.

Since the conditioning disk 131 is installed at the end of the arm 135 of the conditioner 130, the conditioning disk 131 can be placed on the load sensor 110 by rotating the arm 135 have.

Step 2 : The pressurizing actuator 138 of the conditioner 130 is then operated to cause the pressing force to be introduced during the CMP process to act on the load sensor 110. The load sensor 110 measures the pressing force transmitted through the conditioning disk 131 by the pressing force generated from the pressing actuator 138 and transmits the measurement data to the control unit 120 at step S120.

Here, the conditioning disk 131 may be measured in a non-rotating state, but the polishing pad 11 or similar material may be disposed on the upper surface of the load sensor 110, and the conditioning disk 131 may be rotated The pressing force of the load sensor 110 can be measured.

Step 3 : The control unit 120 then checks, from the measurement data received from the load sensor 110, whether the pressing force introduced through the conditioning disk 131 is a predetermined pressing force (conditioning load).

If the pressing force acting through the conditioning disk 131 differs from the predetermined pressing force, the control unit 120 corrects the input value of the pressing actuator 138 by the pressing force correcting unit 140 and corrects the input value of the pressing actuator 138 do.

Here, the conditioning load value measured and corrected by the load sensor 110 may be a predetermined value. However, as shown in FIG. 5, when the conditioning disk 131 is rotated by the rotation of the arm 135, The load value measured and corrected by the load sensor 110 is a load value which is determined over the range of the pressing force acting during the CMP process, It is possible.

Step 4 : When the correction of the pressing force introduced downward through the conditioning disk 131 is completed in step 3, the arm 135 of the conditioner 130 is rotated to perform the chemical mechanical polishing process on the polishing pad 11 )

As described above, the chemical mechanical polishing apparatus according to the embodiment of the present invention is characterized in that the load sensor 110 is disposed outside the polishing pad 11, and the pressing force of the conditioner 130 is measured and corrected in the stationary state, The pressing force applied to the polishing pad 11 by the conditioner in a state in which the component is completely fixed can be corrected so as to act on the polishing pad 11 accurately so that the pressing force error of the conditioner can be examined at the time of a malfunction of the chemical mechanical polishing process Or to preliminarily inspect the normal operation of the conditioner, thereby obtaining an effect of more accurately ensuring the operating condition of the conditioner during the chemical mechanical polishing process.

As described above, since the conditioning load can be more accurately introduced from the conditioner 130 that reforms the polishing pad during the chemical mechanical polishing process, the modification efficiency of the polishing pad can be reliably maintained during the chemical mechanical polishing process, It is possible to obtain an advantageous effect that the deviation can be accurately controlled to improve the polishing quality of the wafer.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, Modified, modified, or improved.

W: wafer 100: chemical mechanical polishing apparatus
11: Polishing pad 20: Polishing head
40: slurry supply unit 110: load sensor
120: control unit 130: conditioner
131: conditioning disk 135: arm
138: pressing actuator 140: pressing force correcting section

Claims (6)

A chemical mechanical polishing apparatus for carrying out a chemical mechanical polishing process of a wafer,
A polishing pad rotating in contact with the polishing surface of the wafer during a chemical mechanical polishing process;
A conditioner for modifying the surface of the polishing pad while pressing the polishing pad while rotating;
A load sensor positioned outside the polishing pad and measuring a pressing force of the conditioner;
Wherein the polishing pad is a polishing pad.
The method according to claim 1,
Wherein the pressing force introduced into the conditioner is measured by the load sensor while the conditioner is positioned on the load sensor at the time of malfunction of the chemical mechanical polishing process for the wafer.
The method according to claim 1,
Wherein the pressing force introduced into the conditioner is measured by the load sensor while the conditioner is placed on the load sensor during a standby time before starting the chemical mechanical polishing process on the wafer. Device.
The method according to claim 1,
Wherein the pressing force is measured in a state in which the pressing force is transmitted to the load sensor while rotating the conditioning disk.
The apparatus of claim 1, wherein the conditioner comprises:
An arm rotatably mounted about an axis and extending to have a radial component of the polishing pad;
A conditioning disk rotating in contact with the polishing pad and receiving a pressing force;
Wherein the rotation of the arm causes the conditioner to reach a measurement position by the load sensor.
6. The method according to any one of claims 1 to 5,
A pressing force correcting unit for correcting a pressing force of the conditioner with a pressing force to be introduced by the conditioner while the conditioner is positioned on the load sensor; Wherein the polishing pad is a polishing pad.

KR1020150027000A 2015-02-26 2015-02-26 Chemical mechanical polishing apparatus KR20160104252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150027000A KR20160104252A (en) 2015-02-26 2015-02-26 Chemical mechanical polishing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150027000A KR20160104252A (en) 2015-02-26 2015-02-26 Chemical mechanical polishing apparatus

Publications (1)

Publication Number Publication Date
KR20160104252A true KR20160104252A (en) 2016-09-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150027000A KR20160104252A (en) 2015-02-26 2015-02-26 Chemical mechanical polishing apparatus

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