KR20140148421A - Method for manufacturing connecting body, and method for connecting electronic component - Google Patents
Method for manufacturing connecting body, and method for connecting electronic component Download PDFInfo
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- KR20140148421A KR20140148421A KR1020147029148A KR20147029148A KR20140148421A KR 20140148421 A KR20140148421 A KR 20140148421A KR 1020147029148 A KR1020147029148 A KR 1020147029148A KR 20147029148 A KR20147029148 A KR 20147029148A KR 20140148421 A KR20140148421 A KR 20140148421A
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- connection
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- electronic component
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- light
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
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Abstract
A step of disposing the electronic part 18 on the substrate 12 through the photo-curable adhesive 3 and a step of irradiating the adhesive 3 with light to cure the substrate 12, 18 are divided into a plurality of connection regions CH1 to CH5, and the timing of initiation of light irradiation is shifted for each of the connection regions CH1 to CH5 to be cured. Curing shrinkage of the photocurable adhesive is suppressed, and connection defects of the electronic parts are improved.
Description
The present invention relates to a manufacturing method of a connection member to which an electronic component or the like is connected using a photocurable adhesive, and a connection method for connecting an electronic component or the like by using a photocurable adhesive.
This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2012-68140, filed on March 23, 2012, the entirety of which is hereby incorporated by reference.
Conventionally, liquid crystal display devices are widely used as various display means such as a television, a PC monitor, a mobile phone, a portable game machine, a tablet PC, or a vehicle-mounted monitor. In recent years, in such a liquid crystal display device, from the viewpoint of fine pitching, lightweight and thinning, so-called COG (chip on glass) in which a liquid crystal driving IC is directly mounted on a substrate of a liquid crystal display panel, Called FOG (film on glass) in which a flexible substrate on which a driving circuit is formed is directly mounted on a substrate of a liquid crystal display panel is employed.
For example, as shown in Fig. 11, the liquid
The
One of the
A liquid crystal driving IC 115 is thermally bonded onto the
When the liquid crystal driving IC 115 is connected to the
However, in the connection method using such an anisotropic conductive film, the thermal pressurization temperature is high, and the thermal shock to the electronic components such as the liquid crystal driving IC 115 and the
Thus, a connection method using an ultraviolet curable adhesive instead of the anisotropic
However, also in the connection method using such an ultraviolet curable adhesive, shrinkage of the adhesive occurs due to curing by ultraviolet irradiation. The gap between the
Accordingly, the present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a method of bonding an electronic component at a low temperature by using an ultraviolet curable adhesive and suppressing deformation due to curing shrinkage of the adhesive, A method of manufacturing a connecting body, and a connecting method of an electronic part.
In order to solve the problems described above, a method of manufacturing a connector according to the present invention includes the steps of disposing an electronic component on a substrate via a photo-curable adhesive, and curing the adhesive by irradiating the adhesive with light, A region to which the substrate and the electronic component are connected is divided into a plurality of connection regions and a timing for starting irradiation of the light is shifted for each of the connection regions.
According to another aspect of the present invention, there is provided a method of connecting an electronic component, comprising the steps of disposing an electronic component on a substrate via a photo-curable adhesive, and irradiating the adhesive with light to cure the substrate, The area to be connected is divided into a plurality of connection areas, and the timing of starting irradiation of the light is staggered for each of the connection areas.
According to the present invention, by staggering the light irradiation timing, the curing start timing is different for each connection region, and connection between the electronic component and the substrate can be achieved while absorbing deformation due to curing shrinkage in each connection region sequentially .
1 is a cross-sectional view showing a mounting process to which the present invention is applied.
2 is a sectional view showing an anisotropic conductive film.
3 is a perspective view showing a connection region formed by connecting an electronic component and a glass substrate.
4A to 4D are plan views showing the start timing of the ultraviolet ray irradiation to which the present invention is applied.
5A and 5B are plan views showing another embodiment of the present invention.
6A to 6E are plan views showing another embodiment of the present invention.
7A to 7C are plan views showing another embodiment of the present invention.
8 is a plan view showing another embodiment of the present invention.
9 is a view for explaining a method of measuring a warpage of a glass substrate according to an embodiment and a comparative example.
10 is a view for explaining a method of measuring conduction resistance according to the embodiment and the comparative example.
11 is a cross-sectional view showing a conventional liquid crystal display panel.
12 is a cross-sectional view showing a COG mounting process of a conventional liquid crystal display panel.
Hereinafter, a manufacturing method and a connection method of a connector to which the present invention is applied will be described in detail with reference to the drawings. It should be noted that the present invention is not limited to the following embodiments, and various modifications may be made without departing from the gist of the present invention. Also, the drawings are schematic, and the ratios and the like of the respective dimensions may be different from the reality. The specific dimensions and the like should be judged based on the following description. Needless to say, the drawings also include portions having different dimensional relationships or ratios with each other.
Hereinafter, a case where an electronic part is connected to a board as a connection object and a board to be connected is described as an example, but the present technique can be applied to other than a connection between a board and an electronic part. For example, a so-called COG (chip on glass) mounting in which a liquid crystal driving IC chip is mounted on a glass substrate of a liquid crystal display panel is performed. 1, the liquid
The
One of the
In addition, the liquid crystal driving IC and the liquid crystal driving circuit can selectively perform liquid crystal display by partially changing the orientation of the liquid crystal by selectively applying the liquid crystal driving voltage to the pixels.
A
An
[Anisotropic conductive film]
As shown in Fig. 2, the anisotropic conductive film (ACF) 1 generally has a conductive particle-containing
As the
The conductive particle-containing layer (3) is formed by dispersing conductive particles (4) in a binder. The binder contains a film-forming resin, a curing resin, a curing agent, a silane coupling agent and the like, and is the same as the binder used in a conventional anisotropic conductive film.
As the film-forming resin, a resin having an average molecular weight of about 10,000 to 80,000 is preferable. Examples of the film-forming resin include various resins such as phenoxy resin, epoxy resin, modified epoxy resin and urethane resin. Among them, a phenoxy resin is particularly preferable from the viewpoints of film formation state, connection reliability, and the like.
The curable resin is not particularly limited, and examples thereof include an epoxy resin and an acrylic resin.
The epoxy resin is not particularly limited and may be appropriately selected depending on the purpose. Specific examples thereof include, for example, naphthalene type epoxy resins, biphenyl type epoxy resins, phenol novolak type epoxy resins, bisphenol type epoxy resins, steel type epoxy resins, triphenolmethane type epoxy resins, phenol aralkyl type epoxy resins, Type epoxy resins, dicyclopentadiene type epoxy resins, and triphenylmethane type epoxy resins. These may be used singly or in combination of two or more.
The acrylic resin is not particularly limited and may be appropriately selected according to the purpose. Specific examples of the acrylic resin include methyl acrylate, ethyl acrylate, isopropyl acrylate, isobutyl acrylate, epoxy acrylate, ethylene glycol diacrylate , Diethylene glycol diacrylate, trimethylolpropane triacrylate, dimethylol tricyclodecane diacrylate, tetramethylene glycol tetraacrylate, 2-hydroxy-1,3-diacryloxypropane, 2,2-bis (Acryloxyethoxy) phenyl] propane, dicyclopentenyl acrylate, tricyclodecanyl acrylate, tris (acryloxyethyl) ethyl acrylate, ) Isocyanurate, urethane acrylate, and epoxy acrylate. These may be used singly or in combination of two or more.
The curing agent is not particularly limited as long as it is a photo-curing type, and it can be appropriately selected according to the purpose. When the curable resin is an epoxy resin, a cationic curing agent is preferable and when the curable resin is an acrylic resin, a radical curing agent is preferable.
The cationic curing agent is not particularly limited and may be appropriately selected depending on the purpose. Examples thereof include a sulfonium salt and an onium salt, and among them, an aromatic sulfonium salt is preferable. The radical curing agent is not particularly limited and may be appropriately selected depending on the purpose, and examples thereof include organic peroxides.
Examples of the silane coupling agent include an epoxy type, an amino type, a mercapto sulfide type, and a ureido type. By adding the silane coupling agent, the adhesion at the interface between the organic material and the inorganic material is improved.
As the conductive particles (4), there can be enumerated any known conductive particles used in the anisotropic conductive film. Examples of the
[Manufacturing method]
Next, a manufacturing process of a connection member in which the
Then, after the conductive particle-containing
The
Subsequently, ultraviolet rays are irradiated by the
The region where the electrode terminal of the
The
By thus shifting the timings of ultraviolet irradiation, the timing of initiation of curing differs for each connection region, and the
Specifically, as shown in Fig. 4A, in the first to fifth connection regions CH1 to CH5 shown in Fig. 3, the irradiation of ultraviolet rays is started from the third ultraviolet
As described above, according to this connection step, the irradiation timing of the ultraviolet rays to the first to fifth connection regions (CH1 to CH5) is made different, and the deformation in the curing of the third connection region (CH3) Is absorbed by the uncured binder of the adjacent second and fourth connection regions (CH2 and CH4), and deformation at the time of curing of the second and fourth connection regions (CH2 and CH4) is absorbed by the adjacent first and fifth connections Is absorbed as an uncured binder in the regions (CH1, CH5).
On the other hand, when the ultraviolet rays are simultaneously irradiated to the first to fifth connection regions CH1 to CH5, since the connection regions CH1 to CH5 simultaneously start to harden, it is possible to absorb the deformation of the adjacent connection regions none. Therefore, according to this connection step, deformation of the
In the case of irradiating ultraviolet rays to a connection region not adjacent to a connection region in which ultraviolet rays are not irradiated, it is possible to minimize deformation due to curing shrinkage of the bonding agent by irradiating a minimum irradiation dose necessary for ultraviolet curing.
Specifically, in this connection step, after the irradiation amount of the minimum necessary for ultraviolet curing is irradiated to the first and fifth connection regions (CH1 and CH5) to which ultraviolet rays are ultimately irradiated, the total connection regions (CH1 to CH5) Ultraviolet irradiation can be stopped. For example, the
As described above, since the first and fifth connection regions (CH1 and CH5) to which ultraviolet rays are ultimately irradiated do not exist in the adjacent region having an uncured binder that absorbs the curing shrinkage, the minimum amount of irradiation necessary for ultraviolet curing The deformation due to the curing shrinkage of the binder can be suppressed to the minimum.
In this connecting step, the timing of starting the ultraviolet ray irradiation may be set to be staggered, and it is not necessarily required that the end of the ultraviolet ray irradiation is constant in each connection region (CH1 to CH5).
Called FOG (film) in which the
As described above, the COG mounting for mounting the liquid crystal driving IC directly on the glass substrate of the liquid crystal display panel and the FOG mounting for mounting the flexible substrate directly on the substrate of the liquid crystal display panel have been described as an example. However, It can be used for various other connections.
[Other Timing 1]
In addition, the region where the ultraviolet ray irradiation is firstly started may not be one, or the ultraviolet ray irradiation may be started simultaneously at a plurality of locations which are not adjacent to each other. For example, as shown in Fig. 5A, ultraviolet ray irradiation can be started from the second and fourth connection regions CH2 and CH4.
Also in this case, the uncured binder in the connection region adjacent to the connection region irradiated with ultraviolet rays, for example, the first, third, and fifth connection regions CH1, CH3, and CH5, (CH2, CH4), it is possible to absorb deformation in the second and fourth connection regions (CH2, CH4) irradiated with ultraviolet rays. Also in this case, as shown in Fig. 5B, ultraviolet rays are irradiated to the connection regions not irradiated with ultraviolet rays such as the first, third, and fifth connection regions CH1, CH3, and CH5, In the case of irradiating, the irradiation amount of the minimum necessary for ultraviolet curing is irradiated, so that the deformation due to the curing shrinkage of the binder can be minimized.
[Other Timing 2]
In this connection step, ultraviolet rays may be irradiated from one end of the plurality of divided connection regions. For example, as shown in Fig. 6A, the
Also in this case, the uncured binder in the connection region adjacent to the connection region irradiated with ultraviolet rays, for example, the second connection region CH2 adjacent to the first connection region CH1, It is possible to absorb deformation in the first connection region CH1 irradiated with ultraviolet rays. Also in this case, when irradiating ultraviolet rays to a connection region that is not adjacent to the connection region not irradiated with ultraviolet rays, for example, a connection region (CH5), irradiation amount of the minimum necessary for ultraviolet curing is irradiated, The deformation due to the hardening shrinkage can be minimized.
[Other Timing 3]
Further, in this connection step, ultraviolet rays can be irradiated from a plurality of end portions of the plurality of divided connection regions. 7A, the
In this case as well, un-curing in the connection regions adjacent to the connection regions irradiated with ultraviolet rays, for example, in the second and fourth connection regions (CH2 and CH4) adjacent to the first and fifth connection regions (CH1 and CH5) The coupling agent flows into the first and fifth connection regions CH1 and CH5 to absorb the deformation in the first and fifth connection regions CH1 and CH5 irradiated with ultraviolet rays. Also in this case, when the ultraviolet rays are irradiated to the third connection region CH3 which is not adjacent to the connection region where the ultraviolet rays are not irradiated, the irradiation amount of the minimum necessary for ultraviolet curing is irradiated, The deformation can be suppressed to a minimum.
[Other Timing 4]
In the above description, the region where the
Although ultraviolet curing type binders are used in the above description, light other than ultraviolet rays may be used in the present invention as long as the binder can be cured by irradiation. In the above description, the anisotropic
Example
Next, an embodiment of the present invention will be described. In this embodiment, the transparent electrodes provided on the glass substrate and the electrode terminals provided on the IC chip are connected to form the connection body samples provided with the first to fifth connection regions (CH1 to CH5) constituting the five channels 3). For each of the connector samples, the connection state between the IC chip and the substrate was evaluated by the conduction resistance value?, And the display unevenness was substituted for evaluation by measuring the amount of deflection (μm) of the substrate.
The anisotropic conductive film used for connection includes an adhesive layer containing a conductive particle-containing layer (ACF layer) having a thickness of 18 mu m. The ACF layer
Phenoxy resin (YP-70: manufactured by Shin-Nittsu Chemical Co., Ltd.); 20 parts by mass
Liquid epoxy resin (EP-828, manufactured by Mitsubishi Chemical Corporation); 30 parts by mass
Solid epoxy resin (YD014: manufactured by Shin-Nittsu Chemical Co., Ltd.); 20 parts by mass
Conductive particles; (AUL704: manufactured by Sekisui Chemical Co., Ltd.): 30 parts by mass
Cationic curing agent (LW-S1: manufactured by Mitsubishi-Afra Kagaku Co., Ltd.); 5 parts by mass
Was melted in a solvent to prepare a mixed solution. The mixed solution was applied on a PET film, and dried in an oven to form a film.
The ACF was adjusted to have a thickness of 18 탆 and laminated to obtain an anisotropic conductive film. The anisotropic conductive films used in Examples and Comparative Examples are 4.0 mm wide × 40.0 mm long.
As an evaluation element
Appearance; 1.8 mm x 34.0 mm
thickness; 0.5mm
, And a wiring for conduction measurement was formed.
As the evaluation substrate to which the evaluation IC was connected, a glass substrate having a glass thickness of 0.5 mm and on which wiring for conductivity measurement was formed was used.
An evaluation IC was disposed on the glass substrate via the anisotropic conductive film, and the connection IC sample was formed by thermal pressurization with a heating and pressing head and ultraviolet irradiation. The heat pressing surface of the heating pressing head is 10.0 mm x 40.0 mm, and the heat pressing surface of the heating pressing head is subjected to fluorine resin processing with a thickness of 0.05 mm as a buffer material. All the temperature conditions of the heating and pressing head are 110 ° C, and the pressurizing conditions are all 70 MPa, 5 seconds.
Ultraviolet irradiation was performed for 5 seconds after the start of heat pressurization of the evaluation IC by the heating pressurizing head set at a predetermined temperature. Irradiation was started after elapse of a predetermined time from the start of heat pressurization for each connection region, The irradiation was uniformly stopped 5 seconds after the start of the heat pressurization by the < RTI ID = 0.0 > Table 1 shows the elapsed time from the start of heat pressurization of the evaluation IC by the heating and pressing head to the ultraviolet irradiation to the connection regions (CH1 to CH5) according to Examples and Comparative Examples.
In the first embodiment, the elapsed time until the ultraviolet irradiation to the third connection region CH3 is set to 0 second and the ultraviolet ray irradiation to the first, second, fourth, and fifth connection regions CH1, CH2, CH4, Were all 1 second. That is, in the first embodiment, the ultraviolet ray irradiation time of the third connection region CH3 is 5 seconds and the ultraviolet ray irradiation time of the first, second, fourth and fifth connection regions CH1, CH2, CH4 and CH5 is 4 seconds to be.
In Example 2, the elapsed time to the ultraviolet irradiation to the third to fifth connection regions (CH3 to CH5) is set to 1 second, the elapsed time to the ultraviolet irradiation to the second connection region (CH2) is set to 2 seconds, 1 < / RTI > connection area (CH1) was 3 seconds. That is, in the second embodiment, the ultraviolet ray irradiation time of the third to fifth connection regions CH3 to CH5 is 4 seconds, the ultraviolet ray irradiation time of the second connection region CH2 is 3 seconds, The irradiation time is 2 seconds.
In Example 3, the elapsed time until the ultraviolet irradiation to the third connection region CH3 is set to 1 second, the elapsed time to the ultraviolet irradiation to the second and fourth connection regions CH2 and CH4 is set to 2 seconds, 1 and the fifth connection regions CH1 and CH5 was set to 3 seconds. That is, in the third embodiment, the ultraviolet ray irradiation time of the third connection region CH3 is 4 seconds, the ultraviolet ray irradiation time of the second and fourth connection regions CH2 and CH4 is 3 seconds, (CH1, CH5) had an ultraviolet irradiation time of 2 seconds.
In Example 4, the elapsed time to the ultraviolet irradiation to the first and fifth connection regions CH1 and CH5 is set to 1 second, and the elapsed time to the ultraviolet irradiation to the second and fourth connection regions (CH2 and CH4) 3 seconds, and the elapsed time to the ultraviolet irradiation in the third connection region CH3 was 4 seconds. That is, in the fourth embodiment, the ultraviolet ray irradiation time of the first and fifth connection regions CH1 and CH5 is 4 seconds, the ultraviolet ray irradiation time of the second and fourth connection regions CH2 and CH4 is 2 seconds, The ultraviolet irradiation time of the connection region CH3 is 1 second.
In Comparative Example 1, the elapsed time from ultraviolet irradiation to the first to fifth connection regions (CH1 to CH5) was uniformly set to 0 second. That is, in Comparative Example 1, the ultraviolet ray irradiation time of the first to fifth connection regions (CH1 to CH5) is uniformly 5 seconds.
In Comparative Example 2, the elapsed time until irradiation of ultraviolet rays to the first to fifth connection regions (CH1 to CH5) was uniformly set to 4 seconds. That is, in Comparative Example 2, the ultraviolet irradiation time of the first to fifth connection regions (CH1 to CH5) is uniformly 1 second.
Table 2 shows the relationship between the ultraviolet irradiation time and the curing shrinkage ratio of the anisotropic conductive film according to Examples and Comparative Examples. The term "hardening shrinkage" refers to the rate at which an anisotropic conductive film shrinks due to ultraviolet curing,
Cure shrinkage ratio = (specific gravity of cured product of adhesive layer - specific gravity of resin solution of adhesive layer) / specific gravity of cured product of adhesive layer x 100
.
Under the above conditions, heating and pressurization and ultraviolet irradiation were conducted to form connection samples connected to the glass substrate for evaluation IC, and the magnitude of warpage (μm) and the resistance value (Ω) of conductivity were measured for each sample.
As shown in Fig. 9, the
The conduction resistance value was measured by conducting a high temperature and high humidity test in which the connecting body sample was left for 500 hours under the environment of 85 ° C and 85% RH. Then, as shown in FIG. 10, the glass connected to the
As shown in Table 2, in each of the embodiments, the irradiation timings of the ultraviolet rays are staggered and staggered over the first to fifth connection regions (CH1 to CH5). Therefore, at the time of hardening the connection region where ultraviolet ray irradiation is performed Is absorbed by the uncured binder of the adjacent connection region. Therefore, according to each example, the amount of warpage also reached 11.3 占 퐉 at the maximum, and the maximum connection resistance was 12.4 ?. Therefore, according to this connection step, it is understood that deformation of the glass substrate can be suppressed, and defective connection of the evaluation IC can be prevented.
On the other hand, in Comparative Example 1 in which irradiation of ultraviolet light was started simultaneously with the heat application to the first to fifth connection regions (CH1 to CH5), curing was simultaneously started in the connection regions (CH1 to CH5) And the curing shrinkage rate was as large as 2.7%, the deformation of adjacent connection regions could not be absorbed, the amount of warpage was as large as 14.5 占 퐉, and the connection resistance became 15.1 ?.
Further, in Comparative Example 2 in which irradiation of ultraviolet light was started four seconds after the thermal pressurization with respect to the first to fifth connection regions (CH1 to CH5), the warpage was suppressed to 5.0 占 퐉 because the curing shrinkage rate was as small as 1.1% And the connection resistance after the high temperature and high humidity test was 110.8?.
In Examples 3 and 4, irradiation was started from the central third connection region CH3, and ultraviolet rays were sequentially irradiated toward the end portions. In Example 3, irradiation of ultraviolet rays from the connection regions (CH1 and CH5) The warping amount and the connection resistance were comparatively good in Example 4 to be examined. This is because the connection region where ultraviolet rays are irradiated is always provided with a connection region in which ultraviolet rays are not irradiated, so that the deformation in the curing can be absorbed by the uncured bonding agent in the adjacent connection region in many connection regions I think.
Among them, in Example 3, ultraviolet irradiation to the connection regions (CH1 and CH5) at the ends is ended, and the irradiation time is short and the hardening shrinkage rate is also low. Since the warpage of the glass substrate increases toward the outside from the center portion, the warpage of Example 3 in which the outside (end) hardening shrinkage rate is lowered can be suppressed to the greatest.
1: Anisotropic conductive film
2: peeling film
3: Conductive particle-containing layer
4: conductive particles
10: liquid crystal display panel
11: transparent substrate
12: transparent substrate
13: seal
14: liquid crystal
15: Panel display
16: Transparent electrode
17: Transparent electrode
17a:
18: Electronic parts
20: COG mounting part
21: Flexible substrate
22: FOG mounting part
24:
25: polarizer
26: polarizer
30: heating pressure head
31: ultraviolet irradiator
Claims (9)
Irradiating the adhesive with light to cure the adhesive,
A method of manufacturing a connection body to which the electronic component is connected on the substrate in which the region where the substrate and the electronic component are connected are divided into a plurality of connection regions and the timing of irradiation initiation of the light is staggered, .
And the irradiation of the light to the connection region other than the arbitrary one or plurality of connection regions is started after a predetermined time elapses.
And the irradiation of the light to the connection region other than the central connection region is started after a lapse of a predetermined time.
And the irradiation of the light is started to a connection region other than the connection region of the one or more ends after a lapse of a predetermined time.
Thereby delaying the timing of starting irradiation of the light stepwise toward the connection region at the other end of the region where the substrate and the electronic component are connected.
Thereby delaying timing of starting irradiation of the light stepwise toward the connection region at the center of the region where the substrate and the electronic component are connected.
Irradiating the adhesive with light to cure the adhesive,
An electronic component connecting method for connecting the electronic component on the substrate, wherein an area where the substrate and the electronic part are connected are divided into a plurality of connection areas and a timing for starting irradiation of the light is staggered for each of the connection areas .
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04346237A (en) * | 1991-05-23 | 1992-12-02 | Matsushita Electric Ind Co Ltd | Bonding method for lead of ic component |
WO2000046315A1 (en) | 1999-02-08 | 2000-08-10 | Hitachi Chemical Co., Ltd. | Adhesive, electrode-connecting structure, and method of connecting electrodes |
JP2005182000A (en) * | 2003-11-28 | 2005-07-07 | Semiconductor Energy Lab Co Ltd | Method of manufacturing display device |
JP2007298608A (en) * | 2006-04-28 | 2007-11-15 | Victor Co Of Japan Ltd | Method for manufacturing optical component |
JP2009224394A (en) * | 2008-03-13 | 2009-10-01 | Omron Corp | Jointing apparatus and jointing method |
JP2011082582A (en) * | 2011-01-25 | 2011-04-21 | Sony Chemical & Information Device Corp | Method of manufacturing connection structure, method of anisotropic conductive connection, and connection structure |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2841846B2 (en) * | 1990-11-14 | 1998-12-24 | 松下電器産業株式会社 | IC semiconductor element bonding method |
JPH08281958A (en) * | 1995-04-11 | 1996-10-29 | Canon Inc | Manufacture of liquid jet recording head |
TW200500387A (en) * | 2003-06-02 | 2005-01-01 | Showa Denko Kk | Flexible wiring board and flex-rigid wiring board |
JP2005129756A (en) * | 2003-10-24 | 2005-05-19 | Matsushita Electric Ind Co Ltd | Method of joining semiconductor element |
WO2005052891A1 (en) * | 2003-11-26 | 2005-06-09 | Sharp Kabushiki Kaisha | Photomask and production method for laminated substrate using this |
CN101681855B (en) * | 2007-05-24 | 2013-03-13 | 索尼化学&信息部件株式会社 | Electric device, connecting method and adhesive film |
JP2009224395A (en) * | 2008-03-13 | 2009-10-01 | Omron Corp | Jointing method and jointing apparatus |
WO2011077978A1 (en) * | 2009-12-25 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
-
2012
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04346237A (en) * | 1991-05-23 | 1992-12-02 | Matsushita Electric Ind Co Ltd | Bonding method for lead of ic component |
WO2000046315A1 (en) | 1999-02-08 | 2000-08-10 | Hitachi Chemical Co., Ltd. | Adhesive, electrode-connecting structure, and method of connecting electrodes |
JP2005182000A (en) * | 2003-11-28 | 2005-07-07 | Semiconductor Energy Lab Co Ltd | Method of manufacturing display device |
JP2007298608A (en) * | 2006-04-28 | 2007-11-15 | Victor Co Of Japan Ltd | Method for manufacturing optical component |
JP2009224394A (en) * | 2008-03-13 | 2009-10-01 | Omron Corp | Jointing apparatus and jointing method |
JP2011082582A (en) * | 2011-01-25 | 2011-04-21 | Sony Chemical & Information Device Corp | Method of manufacturing connection structure, method of anisotropic conductive connection, and connection structure |
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TWI581972B (en) | 2017-05-11 |
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JP5926590B2 (en) | 2016-05-25 |
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