KR20140141359A - Organic Light Emitting Diode Display Device and Method for Manufacturing The Same - Google Patents

Abstract

According to an embodiment of the present invention, an organic electroluminescence display device comprises: a flexible substrate; a photochromic layer disposed on the flexible layer; a thin film transistor, a gate line, and a data line disposed on the photochromic layer; a pad part connected to one end of one of the gate line and the data line; a first electrode disposed on the thin film transistor and connected to the thin film transistor; an organic emission layer disposed on the first electrode and emitting light in a region contacting the first electrode; and a second electrode disposed on the organic emission layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent display device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display and a method of manufacturing the same, and more particularly, to a flexible substrate-based organic light emitting display and a method of manufacturing the same.

In recent years, organic electroluminescent display devices having characteristics such as superior color reproducibility, thinner thickness, lower power consumption, wider viewing angle, and faster response speed are attracting attention as next generation display devices. Furthermore, organic EL display devices are more advantageous than conventional liquid crystal display devices in the implementation of a flexible display device, which is one of future display devices, and various studies are proceeding.

In the case of a flexible organic light emitting display, in general, a flexible substrate is formed on a base substrate in a manufacturing process, and various devices and metal wiring are formed. After all the components of the display device are formed, finally, the base substrate is separated from the flexible substrate, and the process is completed. At this time, a process called laser release is used.

A laser release is a process of irradiating a light source of a specific wavelength onto a base substrate and then separating the base substrate and the flexible substrate from the sacrificial layer formed between the base substrate and the flexible substrate.

1 is a cross-sectional view illustrating a laser emitting process of a conventional organic light emitting display device.

As shown in Fig. 1, the base substrate 101 and the sacrificial layer 102 are separated from the flexible substrate 110 by a laser release process. A thin film transistor 120, a gate line 131, and a data line 132 are formed on a sequentially stacked base substrate 101, a sacrificial layer 102, and a flexible substrate 110 before a laser release process, And an insulating layer 130 is formed so as to cover an area except the pad part 140. The insulating layer 130 is formed on the insulating layer 130, The insulating layer 130 may be an organic planarizing film. Thereafter, the first electrode 150, the organic light emitting layer 160, and the second electrode 170 are sequentially formed.

Due to the flexible nature of the flexible substrate 110, the process reliability is degraded when the above components are formed directly on the flexible substrate 110. Therefore, the base substrate 101 is required as described above.

In the laser release process of separating the base substrate 101 from the flexible substrate 110 after all of the above elements of the organic electroluminescence display device are formed, a light source in an ultraviolet (UV) Is used.

When a light source having a wavelength of about 355 nm or less is used, the separation of the base substrate 101 and the flexible substrate 110 is facilitated and the flexible substrate 110 can be separated even when there is no sacrificial layer. In addition, among the constituent elements formed on the flexible substrate 110, a structure formed of a metal including a thin film transistor, particularly an oxide thin film transistor, is advantageous in that it is not damaged by the light source.

However, equipment using a light source having a wavelength of 355 nm or less is very expensive, and is disadvantageous in mass production because of its low output.

Therefore, a light source having a wavelength of about 532 nm, which is advantageous for mass production, can be used because it is inexpensive and has high output for mass production. However, when a light source having a wavelength of 532 nm is used, a sacrificial layer is necessarily required at the time of laser release, which may cause damage to the structure formed of the thin film transistor and the metal.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide an organic light emitting display capable of reducing damage caused by a laser during a laser release process.

According to an aspect of the present invention, there is provided an organic light emitting display including: a flexible substrate; A photochromatic layer disposed on the flexible substrate; A thin film transistor, a gate line, and a data line arranged on the photochromatic layer; A pad connected to one end of the gate line and the data line; A first electrode disposed on the thin film transistor and connected to the thin film transistor; An organic emission layer disposed on the first electrode and emitting light in a region in contact with the first electrode; And a second electrode disposed on the organic light emitting layer.

According to an aspect of the present invention, there is provided a method of manufacturing an organic light emitting display, including: forming a sacrificial layer on a base substrate; Forming a flexible substrate on the sacrificial layer; Forming a photochromic layer on the flexible substrate; Forming a thin film transistor, a gate line, and a data line on the photochromic layer; Forming a pad portion connected to one of the gate line and the data line; Forming a first electrode on the thin film transistor; Forming an organic light emitting layer on the first electrode; Forming a second electrode on the organic light emitting layer; Irradiating the photochromatic layer with a first light source having a first wavelength to discolor the photochromic layer; And irradiating the base substrate with a second light source having a second wavelength to separate the base substrate from the flexible substrate.

According to the present invention, a photochromatic layer is formed on a base substrate, and in a laser release process for separating a base substrate, a metal wiring including a thin film transistor, a gate line, a data line and a pad portion and a conductive material It is possible to prevent the layer from being damaged.

In addition, according to the present invention, when a photochromic layer is applied to a transparent organic electroluminescent display device, visibility can be improved by increasing the contrast ratio when the display is driven.

In addition, according to the present invention, it is possible to prevent damage to the metal wiring and the conductive material layer, thereby improving driving reliability of the organic light emitting display device.

FIG. 1 is a cross-sectional view illustrating a laser emitting process of a conventional organic light emitting display device; FIG.
2 is a cross-sectional view illustrating an organic light emitting display device according to an embodiment of the present invention;
3 is a cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention;
FIG. 4 is a cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention; FIG. And
5A to 5D are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view illustrating an organic light emitting display according to an exemplary embodiment of the present invention.

2, the organic light emitting display according to an exemplary embodiment of the present invention includes a flexible substrate 210, a photochromic layer 220, a thin film transistor 230, a gate line 231, a data line The first electrode 260, the organic light emitting layer 270, and the second electrode 280. The organic light emitting layer 270 is formed of a transparent conductive material.

The photochromatic layer 220 is disposed on the entire surface of the flexible substrate 210 or on the entire surface thereof except for a part thereof. The photochromatic layer 220 is formed on the photochromatic layer 220 by blocking the laser incident into the organic electroluminescent display device during the laser release process and forming the thin film transistor 230, the gate line 231, The metal lines or conductive material layers including the data lines 232 and the pad portions 250 are prevented from being damaged.

The photochromatic layer 220 includes a substance that is variably discolored depending on the amount of light absorption, and this material includes all of the compounds that change from a colorless to a colorless by a photoreaction to a colorless to a colorless. Photochromism is also called photochromic or photochromism.

The photochromic material has the characteristic of changing the chemical structure to change the absorption spectrum accordingly when irradiating light of a specific wavelength in a solution or solid state, irradiating light of a different wavelength, or returning to the initial state when it is dark.

Specific examples of the photochromic material include inorganic silver compounds such as silver halide including silver chloride (AgCl), silver bromide (AgBr), silver iodide (AgI) and the like. Examples of the organic compound include azobenzen compounds, diarylethene-based compounds, spironaphthoxazine-based compounds, thioindigo-based compounds, triphenylmethane-based compounds, furylfulgide derivatives, and spiropyrane- have.

For example, the photochromatic layer 220 may include a spiropyrane-based compound, an azobenzen-based compound, and a diarylethene-based compound. When the spiropyrane compound absorbs a light source having a wavelength of 350 nm, it changes to a red color. When the azobenzene compound absorbs a light source having a wavelength of 340 nm, the spiropyrane compound discolors to green. The diarylethene (diarylethene) based compound absorbs a light source with a wavelength of 310 nm and changes color to blue. In addition, the three compounds are transparent when the light source is removed or when a light source having a wavelength of 390 nm is absorbed.

Accordingly, when light having a wavelength of 310 nm, 340 nm, or 350 nm is irradiated, the spiropyrane compound turns red, the azobenzene compound turns green, and the diarylethene The system compound is changed to blue, and the photochromatic layer 220 is changed to black as a whole, so that light is not transmitted. After the light source is removed, the photochromatic layer 220 becomes transparent again after a certain period of time or when light having a wavelength of 390 nm is irradiated.

The photochromatic layer 220 can control the wavelength band and the sensitivity to the light source during the laser release process by controlling the composition ratio and the kind of the additive material. In addition, the photochromatic layer 220 may have a double or multi-layer structure, so that it is possible to more reliably block the light source during a laser release process.

A thin film transistor 230, a gate line 231, and a data line 232 are disposed on the photochromatic layer 220. Further, the metal wiring of the driver circuit is formed of the same material as the gate line 231 and the data line 232. In particular, the thin film transistor 230 may be an oxide thin film transistor including an oxide.

In more detail, the thin film transistor 230 includes a gate electrode (not shown), a semiconductor layer (not shown), and a source and drain electrode (not shown). Generally, the gate electrode is formed of the same material in the same layer as the gate line 231, and the source and drain electrodes are formed of the same material in the same layer as the data line 232.

A semiconductor layer is formed on or under the gate electrode, and an insulating layer (not shown) is interposed between the gate electrode and the semiconductor layer to be insulated from each other. The source and drain electrodes are connected to the semiconductor layer and a data signal input to the source electrode is transmitted to the drain electrode through the semiconductor layer according to a gate signal transmitted to the gate electrode.

The gate line 231 and the data line 232 intersect with each other to define a pixel. 2 shows that the gate line 231 and the data line 232 are disposed on the same layer on the side of the thin film transistor 230. In reality, And intersect with each other at the boundary of the pixels.

In addition, among the metal wirings constituting the driving circuit, the metal wirings except for the thin film transistor 230 may be formed by patterning the same material in the same layer as the gate line 231 and the data line 232, respectively. Metal wirings formed on different layers can be connected to each other through contact holes (not shown).

A buffer layer (not shown) is further formed on the photochromatic layer 220 before the metal wiring of the driver circuit including the thin film transistor 230, the gate line 231 and the data line 232 is formed on the photochromatic layer 220 . The buffer layer can improve process reliability of forming the thin film transistor 230, the gate line 231, and the data line 232.

The insulating layer 240 is formed on the metal wiring of the driver circuit including the thin film transistor 230, the gate line 231 and the data line 232. The insulating layer 240 maintains insulation between the first electrode 260 and the metal wiring before the first electrode 260, the organic light emitting layer 270 and the second electrode 280 are formed thereon, So that the upper structure can be stably formed.

The pad portion 250 is formed to be connected to one end of either the gate line 231 or the data line 232. Although not shown in FIG. 1, gate lines 231 and data lines 232 intersecting with each other are connected to the pad portion 250 in the pad region. The pad portion 250 includes a gate pad and a data pad.

More specifically, the gate line 231 is formed in the first direction of the panel, and the gate pad is formed on the gate line 231 in the pad region located at one end in the first direction. Similarly, a data line 232 is formed in a second direction that intersects the first direction of the panel, and a data pad is formed on the data line 232 in a pad region located at one end of the second direction.

The photochromatic layer 220 is formed in the direction in which the light source is irradiated so that the photochromatic layer 220 is formed on the pad 250 in the laser emission process, Lt; / RTI >

The organic light emitting layer 270 and the second electrode 280 are sequentially formed on the insulating layer 240 and the organic light emitting layer 270 is formed on the first electrode 260 and the second electrode 280, Is defined as a light emitting region. The second electrode 280 is disposed on the organic light emitting layer 270. The first electrode 160 is disposed on the thin film transistor 230 with the insulating layer 240 therebetween and is connected to the thin film transistor 230.

The first electrode 260 may be formed of a conductive oxide containing any one of indium, tin, zinc, molybdenum (Mo), and tungsten (W) And may include any one of indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO). The material is not a metal and can be seen as a layer of conductive material.

The second electrode 280 may be formed of a thin metal so that light emitted from the organic light emitting layer 270 may be emitted to the outside. For example, it may include one of metal groups including silver (Ag), magnesium (Mg), calcium (Ca), aluminum (Al), lithium (Li), neodymium (Nd)

3 is a cross-sectional view illustrating an organic light emitting display according to another embodiment of the present invention.

3, an organic light emitting display according to another embodiment of the present invention includes a first electrode 260, a thin film transistor 230, a gate line 231, a data line 232, And a photochromatic layer 220 disposed in a region corresponding to the light emitting layer 250.

The photochromatic layer 220 prevents the metal wiring and the conductive material layer formed on the flexible substrate 210 from being damaged by laser light during a laser release process. Therefore, the photochromatic layer 220 may be formed only on a region corresponding to the metal wiring and the conductive material layer formed on the flexible substrate 210, without being formed on the front surface of the flexible substrate 210.

That is, the photochromatic layer 220 is formed only in the region corresponding to the pad portion 250 in the pad region, and the photochromatic layer 220 may not be formed in the region except the region corresponding to the pad portion 250. In addition, the photochromatic layer 220 may not be formed in a region of the light emitting region other than the region corresponding to the metal wiring and the conductive material layer including the first electrode 260, the gate line 231, and the data line 232 have.

In addition, metal wirings formed of the same material in the same layer as the gate line 231 and the data line 232 generally include a thin film transistor 230 to form a driving circuit. The photochromatic layer 220 may be formed only in a region corresponding to the driving circuit and the photochromatic layer 220 may not be formed in a region except a region corresponding to the driving circuit.

The photochromatic layer 220 is formed on the flexible substrate 210 and then patterned to form the first electrode 260 and the thin film 220. The photochromatic layer 220 is formed on the flexible substrate 210, The gate line 231, the data line 232, and the pad unit 250. In this case,

When the photochromatic layer 220 is formed in a pattern, it is difficult to stably form the gate line 231, the data line 232, and the pad portion 250 including the thin film transistor 230 on the photochromatic layer 220. The planarization layer 221 is additionally disposed on the photochromatic layer 220 so that the thin film transistor 230, the gate line 231, the data line 232, the pad portion 250, and the like can be stably formed . The planarization layer 221 may include an acrylic resin-based material.

4 is a cross-sectional view illustrating an organic light emitting display according to another embodiment of the present invention.

4 is a cross-sectional view of a transparent organic electroluminescence display device, in particular, of an organic electroluminescence display device, in which a transparent region is further disposed on the side of a light emitting region within a single pixel. Alternatively, the transparent organic electroluminescent display device shown in FIG. 4 may be arranged such that the light emitting region and the transparent region are adjacent to each other or separated by a certain distance in different pixels. A first electrode 260, an organic light emitting layer 270 and a second electrode 280 are formed in the light emitting region, and a thin film transistor 230, a gate electrode (not shown) for driving the organic light emitting layer 270, A driving circuit constituted by a metal wiring and a conductive material layer including the line 231 and the data line 232 is located.

Further, the transparent region is not formed with the driving circuit located in the light emitting region, and transparency is maintained. Although the insulating layer 240 is shown in FIG. 4, the present invention is not limited thereto. The insulating layer 240 may not be formed, or some of the components located in the light emitting region may be formed.

For example, in the case of the WRGB method, since the organic light emitting layer 270 is formed on the entire surface or the entire surface except the part of the flexible substrate 210, the organic light emitting layer 270 can be formed in the transparent region. However, in the case of the RGB method, since the organic light emitting layer 270 is independently deposited for each pixel, it may not be formed in the transparent region.

When the second electrode 280 is a cathode electrode, the cathode electrode may be formed in a transparent region as long as it is a common electrode formed in common without pixels, not as an electrode formed independently of each pixel. However, the present invention is not limited to the above description, and some or all of the components other than the organic light emitting layer 270 and the second electrode 280 among the components disposed in the light emitting region may be formed in the transparent region.

Since the photochromatic layer 220 is partially formed on the flexible substrate 210 as in the previous embodiment, the photochromatic layer 220 is patterned to form the first electrode 260, the thin film transistor 230, The data line 232, and the pad unit 250. In this case,

Since the gate line 231 including the thin film transistor 230, the data line 232, and the pad portion 250 are difficult to be stably formed on the photochromatic layer 220 in the form of a pattern, A planarization layer 221 may be additionally formed on the photochromatic layer 220 so as to stably form the thin film transistor 230, the gate line 231, the data line 232, the pad portion 250, .

When the photochromatic layer 220 is formed on the flexible substrate 210 in the form of a pattern on the flexible organic light emitting display device or on the entire surface of the flexible substrate 210 excluding the front surface or a part thereof, , And can also act as a shade to improve the contrast ratio in the light or outdoors.

5A to 5D are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to an embodiment of the present invention.

5A, a sacrifice layer 202 is first formed on a base substrate 201, and then a flexible substrate 210 is formed on a sacrifice layer 202. The flexible substrate 210 may be formed of a material such as polyethersulphone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethyelene terephthalate (PET), Polyphenylene Sulfide (PPS), Polyallylate, Polyimide, Polycarbonate (PC), Cellulose Triacetate (TAC) and Cellulose Acetate Propionate : CAP).

The flexible substrate 210 may be formed by, for example, a spin coating method. More specifically, after the liquid material containing any one of the above-mentioned materials is placed on the sacrificial layer 202, the base substrate 201 may be rotated at a high speed to form a thin flexible substrate 210 having a high thickness uniformity have.

In addition, the flexible substrate 210 may be formed by a roll coating method or a slit coating method. However, the two methods have a disadvantage in that the thickness uniformity is lower than that of the spin coating method, Is relatively high.

Next, the photochromatic layer 220 is formed on the flexible substrate 210. The photochromatic layer 220 may be formed of at least one selected from the group consisting of silver chloride (AgCl), silver bromide (AgBr), silver iodide (AgI), azobenzen compound, diarylethene compound, spironaphthoxazine compound, a thioindigo compound, a triphenylmethane compound, a furylfulgide derivative, and a spiropyrane compound.

The photochromatic layer 220 may be formed by a spin coating method, a roll coating method, or a slit coating method in the same manner as the flexible substrate 210.

The photochromatic layer 220 may be formed on the entire surface of the flexible substrate 210 except for a front surface or a part thereof and the photochromatic layer 220 may be patterned to form the first electrode 260, The data line 232, and the pad portion. That is, the photochromatic layer 220 located in a region excluding the region corresponding to the first electrode 260, the thin film transistor 230, the gate line 231, the data line 232, and the pad portion is removed, 220 may be formed in the pattern corresponding to the first electrode 260, the thin film transistor 230, the gate line 231, the data line 232, and the pad portion.

When the photochromatic layer 220 is formed on the entire surface of the flexible substrate 210 except the front or a part of the flexible substrate 210 or in particular the photochromatic layer 220 is formed in the form of a pattern on the flexible substrate 210, A planarization layer (not shown) may be further formed on the stratum 220. In order to more stably form the thin film transistor 230, the gate line 231 and the data line 232 to be formed later on the photochromatic layer 220, a buffer layer is further formed on the photochromatic layer 220 .

Next, a metal wiring and a conductive material layer including the thin film transistor 230, the gate line 231, and the data line 232 may be formed to form a driver circuit. A pad portion 250 is formed at one end of one of the gate line 231 and the data line 232 and the pad portion 250 is connected to one end of the gate line 231 and the data line 232.

Next, an insulating layer 240 is formed on the thin film transistor 230, the gate line 231 and the data line 232, and the first electrode 260, the organic light emitting layer 270 And a second electrode 280 are sequentially formed. The insulating layer 240 is formed of an organic material having excellent planarization property to planarize the irregularities of the driving circuit including the metal wiring including the thin film transistor 230, the gate line 231 and the data line 232, .

Next, as shown in Fig. 5B, the first light source having the first wavelength is irradiated toward the base substrate 201 and the photochromic layer 220 for at least 10 seconds or more. As the first wavelength, a wavelength band (using an intrinsic wavelength band in which a substance can be discolored for each photochromic layer) can be selectively used, which can selectively react only with the photochromatic layer 220. More specifically, 230, the gate line 231, and the data line 232, and does not cause any property change. At this time, the photochromatic layer 220 absorbs the first light source and is discolored. The color of the discoloration and the degree of discoloration vary depending on the material of the photochromatic layer 220 and the material forming the photochromatic layer 220 blocks the second light source to be irradiated later to form the thin film transistor 230, the gate line 231, Line 232 or the like to the extent that damage can be prevented.

5C, when the second light source having the second wavelength is irradiated toward the base substrate 201, a gas is ejected from the sacrificial layer 202, The base substrate 201 is separated from the flexible substrate 210.

The step of irradiating the second light source and separating the sacrificial layer 202 and the base substrate 201 from the flexible substrate 210 proceeds in the state where the photochromatic layer 220 has already been discolored by the first light source At this time, since the second light source is blocked in the photochromatic layer 220, the transistor 230, the gate line 231, the data line 232, and the like can be prevented from being damaged by the second light source. The second wavelength generally has a range from 308 nm to 532 nm, but more specifically, the first wavelength can be determined in a range larger than the second wavelength.

Finally, as shown in Fig. 5D, the photochromatic layer 220 can be returned to its original transparent state when it is irradiated with a third light source which can stop the irradiation of the second light source or restore the original state . The third light source may vary depending on the material of the photochromatic layer 220.

In the laser release process of separating the base substrate by applying the photochromatic layer 220 which is discolored by the irradiation of the light source to the organic EL device based on the flexible substrate 210 as described above, It is possible to prevent the metal wiring and the conductive material layer including the transistor, the gate line, the data line and the pad portion from being damaged. In particular, when the photochromatic layer 220 is applied to the transparent organic electroluminescent display device, the display ratio can be increased to improve the visibility when the display is driven. In addition, it is possible to prevent damage to the metal wiring and the conductive material layer, thereby improving driving reliability of the organic light emitting display device.

It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof.

It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

210: flexible substrate 220: photochromic layer
230: Thin film transistor 231: Gate line
232: Data line 240: Insulation layer
250: pad portion 260: first electrode
270: organic light emitting layer 280: second electrode

Claims (12)

A flexible substrate;
A photochromatic layer disposed on the flexible substrate;
A thin film transistor, a gate line, and a data line arranged on the photochromatic layer;
A pad connected to one end of the gate line and the data line;
A first electrode disposed on the thin film transistor and connected to the thin film transistor;
An organic emission layer disposed on the first electrode and emitting light in a region in contact with the first electrode; And
And a second electrode disposed on the organic light emitting layer. The method according to claim 1,
Wherein the photochromatic layer is variably discolored according to a light absorption amount. The method according to claim 1,
The color photochromic layer may be formed of silver chloride (AgCl), silver bromide (AgBr), silver iodide (AgI), azobenzen, diarylethene, spironaphthoxazine, thioindigo, triphenylmethane triphenylmethane, furylfulgide derivative, and spiropyrane. The organic electroluminescent display device according to claim 1, The method according to claim 1,
Wherein the photochromatic layer is disposed in a region corresponding to the first electrode, the thin film transistor, the gate line, the data line, and the pad portion. 5. The method according to any one of claims 1 to 4,
The organic light emitting display device may further include a planarization layer disposed on the photochromatic layer,
Wherein each of the thin film transistor, the gate line, and the data line is formed on the planarization layer. 5. The method according to any one of claims 1 to 4,
The organic light emitting display device may further include a buffer layer disposed on the photochromatic layer,
Wherein each of the thin film transistor, the gate line, and the data line is formed on the buffer layer. Forming a sacrificial layer on the base substrate;
Forming a flexible substrate on the sacrificial layer;
Forming a photochromic layer on the flexible substrate;
Forming a thin film transistor, a gate line, and a data line on the photochromic layer;
Forming a pad portion connected to one of the gate line and the data line;
Forming a first electrode on the thin film transistor;
Forming an organic light emitting layer on the first electrode;
Forming a second electrode on the organic light emitting layer;
Irradiating the photochromatic layer with a first light source having a first wavelength to discolor the photochromic layer; And
And irradiating the base substrate with a second light source having a second wavelength to separate the base substrate from the flexible substrate. 8. The method of claim 7,
Wherein the first wavelength is greater than the second wavelength. 8. The method of claim 7,
The step of separating the base substrate comprises:
Wherein the photochromatic layer progresses in a discolored state. 8. The method of claim 7,
The step of forming the photochromatic layer on the flexible substrate includes:
Forming a photochromatic layer on the flexible substrate; patterning the photochromic layer to form a photochromic layer on the first electrode, the thin film transistor, the gate line, the data line, And removing the photochromic layer on the organic light emitting display device. 10. The method according to any one of claims 7 to 9,
Forming a planarization layer on the patterned photochromatic layer after forming the photochromic layer,
Wherein each of the thin film transistor, the gate line, and the data line is formed on the planarization layer. 10. The method according to any one of claims 7 to 9,
Further comprising the step of forming a buffer layer on the photochromic layer after forming the photochromic layer,
Wherein each of the thin film transistor, the gate line, and the data line is formed on the buffer layer.

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