KR20140107141A - Method For Menufacturing Semiconductor Chip - Google Patents

Method For Menufacturing Semiconductor Chip Download PDF

Info

Publication number
KR20140107141A
KR20140107141A KR1020140022823A KR20140022823A KR20140107141A KR 20140107141 A KR20140107141 A KR 20140107141A KR 1020140022823 A KR1020140022823 A KR 1020140022823A KR 20140022823 A KR20140022823 A KR 20140022823A KR 20140107141 A KR20140107141 A KR 20140107141A
Authority
KR
South Korea
Prior art keywords
wafer
adhesive film
film
chip
circuit
Prior art date
Application number
KR1020140022823A
Other languages
Korean (ko)
Inventor
히로유키 요네야마
이사오 이치카와
요지 와카야마
타카시 아쿠츠
Original Assignee
린텍 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 린텍 코포레이션 filed Critical 린텍 코포레이션
Publication of KR20140107141A publication Critical patent/KR20140107141A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto

Landscapes

  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

[assignment]
A method of manufacturing a semiconductor chip capable of preventing contamination of a chip and an adhesive film and obtaining a semiconductor chip with an adhesive film by a simple method.
[Solution]
(B) a step of laminating an adhesive film and a surface protective sheet; (c) a step of laminating an adhesive film and a surface protective sheet; (c) a step of adhering an adhesive film for die bonding to a circuit surface of a semiconductor wafer having a circuit formed thereon; (c) a step of grinding the back surface of the semiconductor wafer to obtain a divided group of chips by dividing the wafer into individual circuits, (d) exposing the surface protective sheet to individual pieces of the adhesive film, (E) introducing a laser beam from the back surface side of the wafer and forming a modified region layer for each circuit on the wafer, wherein (d) in the step (a) (B), (a), (c) and (d) are carried out in this order, and the step (e) is carried out before the step (c) The wafer is divided into individual circuits from the modified region layer as a starting point.

Description

TECHNICAL FIELD [0001] The present invention relates to a method for manufacturing a semiconductor chip,

The present invention relates to a method of manufacturing a semiconductor chip, and more particularly, to a dicing method in which a modified region layer is formed in a wafer by a laser beam to form a wafer (chip) and a mounting process employing flip chip bonding The present invention relates to a method of manufacturing a semiconductor chip which can contribute to simplification of a manufacturing process and improvement of product quality.

BACKGROUND ART [0002] In recent years, a semiconductor device using a mounting method called a face down method has been manufactured. In the face down system, a semiconductor chip (hereinafter also referred to as "chip") having an electrode such as a bump is used on a circuit surface, and the electrode is bonded to the substrate.

A semiconductor chip is obtained by discretizing a semiconductor wafer, and an adhesive film for die bonding (hereinafter referred to as "adhesive film") is used for bonding electrodes and substrates provided on the circuit surface of the chip.

In Patent Document 1 (Japanese Patent Application Laid-Open No. 2008-98427), a die bonding adhesive film is laminated on a circuit surface of a wafer, the adhesive film is completely cut, and a groove having a depth less than the wafer thickness Is formed on a laminate of an adhesive film and a wafer, a surface protective sheet is attached to the adhesive film, and the wafer is subjected to back-grinding to separate the wafer.

However, in the case of adopting the method of Patent Document 1, grooves are usually formed by a rotating blade, but the exposed adhesive film and the wafer are cut, so there is a problem that the adhesive film is contaminated by cutting water . It is also conceivable to provide a sheet to be a cover so that the adhesive film is not exposed. However, since such a sheet is also cut at the time of forming the groove, it is not effective because it is necessary to remove the cut sheet in the same shape as the chip . Also, the cutting water may enter the groove and the chip may be contaminated.

[Patent Document 1] Japanese Patent Application Laid-Open No. 2008-98427

The present invention has been made in view of the above circumstances. In other words, it is an object of the present invention to provide a semiconductor chip manufacturing method which can prevent contamination of a chip and an adhesive film, and obtain a semiconductor chip with an adhesive film by a simple method.

The present invention includes the following points.

[1] A process for producing a semiconductor device, comprising the steps of: (a) attaching an adhesive film for die bonding to a circuit surface of a semiconductor wafer on which a circuit is formed,

(b) a step of laminating an adhesive film for die bonding and a surface protective sheet,

(c) a step of grinding the back surface of the semiconductor wafer and dividing the wafer into individual circuits to obtain a divided group of chips,

(d) exposing the surface protective sheet to individual chips for die bonding, and obtaining a chip having an adhesive film for die bonding on the circuit surface; and

(e) a step of forming a modified region layer on the wafer, the laser light being incident on the back surface side of the wafer and being divided for each circuit,

The steps (a) to (d) are carried out in this order or the steps (b), (a), (c) and (d)

Wherein the step (e) is performed prior to the step (c), and the wafer is divided into individual circuits from the modified region layer in the step (c).

[2] A method for manufacturing a semiconductor device, comprising the steps of: (a) attaching an adhesive film for die bonding to a circuit surface of a semiconductor wafer on which a circuit is formed;

(b) a step of laminating an adhesive film for die bonding and a surface protective sheet,

(c) a step of grinding the back surface of the semiconductor wafer and dividing the wafer into individual circuits to obtain a divided group of chips,

(f) a step of attaching an adhesive sheet to the back surface of the divided one-group chip,

(g) peeling the surface protective sheet and obtaining a group of chips having an adhesive film for die bonding,

(d) expanding the pressure-sensitive adhesive sheet to separate the die-bonding adhesive film for each chip, and obtaining a chip having an adhesive film for die bonding on the circuit surface, and

(e) a step of forming a modified region layer on the wafer, the laser light being incident on the back surface side of the wafer and being divided for each circuit,

(a), (b), (c), (f), (g) and (d) The step (f), the step (g) and the step (d) are carried out in this order,

Wherein the step (e) is performed prior to the step (c), and the wafer is divided into individual circuits from the modified region layer in the step (c).

(3 ') a step of attaching the adhesive film for die bonding to a circuit surface of a semiconductor wafer on which a circuit is formed,

(b ') a step of laminating an adhesive film for die bonding and a surface protective sheet,

(c ') a step of grinding the back surface of the semiconductor wafer,

(d ') a step of expanding the surface protective sheet to separate the die-bonding adhesive film for each chip, and obtaining a chip having an adhesive film for die bonding on the circuit surface, and

(e ') a step of forming a modified region layer on the wafer by making a laser light incident on the back surface side of the wafer and partitioning each circuit,

The step (d ') in the step (a') is carried out in this order or the step (b '), the step (a'), the step (c ') and the step (d'

Wherein the step (e ') is carried out after the step (c') and before the step (d ').

(4 ') a step of attaching the adhesive film for die bonding to a circuit surface of a semiconductor wafer having a circuit formed thereon,

(b ') a step of laminating an adhesive film for die bonding and a surface protective sheet,

(c ') a step of grinding the back surface of the semiconductor wafer,

(f ') a step of adhering the adhesive sheet to the back surface of the semiconductor wafer,

(g ') peeling the surface protective sheet to obtain a semiconductor wafer having an adhesive film for die bonding,

(d ') a step of expanding the adhesive sheet to separate the die-bonding adhesive film for each chip, and obtaining a chip having an adhesive film for die bonding on the circuit surface, and

(e ') a step of forming a modified region layer on the wafer by making a laser light incident on the back surface side of the wafer and partitioning each circuit,

(a '), (b'), (c '), (f'), (g ') and (d' (a '), (c'), (f '), (g') and (d '

Wherein the step (e ') is carried out after the step (c') and before the step (d ').

According to the first semiconductor chip manufacturing method of the present invention, contamination of chips and an adhesive film can be prevented, and a semiconductor chip with an adhesive film can be efficiently obtained. That is, an adhesive film is laminated on the circuit surface before the semiconductor wafer is unified (chip) by forming a modified region inside the wafer by the laser beam. After the wafer is unified, the adhesive film It is possible to prevent contamination of the chip or the adhesive film due to the cutting water because the adhesive film is not exposed to the cutting water in the state in which the adhesive film is exposed, The manufacturing efficiency of the semiconductor chip is improved.

According to the second semiconductor chip manufacturing method of the present invention, contamination of chips and an adhesive film can be prevented, and a semiconductor chip with an adhesive film can be efficiently obtained. That is, an adhesive film is laminated on the circuit surface by forming a modified region inside the wafer by laser light to form a wafer, and then the adhesive film is divided into pieces by an expanding process under predetermined conditions, Since the film-attached semiconductor chip is manufactured, it is possible to prevent contamination of the chip or the adhesive film due to the cutting water, and the manufacturing efficiency of the semiconductor chip with the adhesive film .

According to the method for manufacturing a semiconductor chip of the present invention, in the mounting technique for mounting the circuit surface side on a chip mounting substrate or another chip, a modified region layer is formed in the wafer by laser light, ), And the like. In addition, even in the case of a high-bump chip, by appropriately selecting the composition of the adhesive film, sufficient adhesion between the chip-mounting substrate and other chips can be obtained, thereby improving the product quality. That is, according to the method for manufacturing a semiconductor chip of the present invention, a dicing method in which a modified region layer is formed in a wafer by a laser beam to unify (chip) the wafer, and a mounting process employing flip chip bonding are continuously performed A method of manufacturing a semiconductor chip capable of contributing to simplification of a manufacturing process and improvement of product quality is provided.

1 shows a step of a method of manufacturing a first semiconductor chip according to the present invention.
Fig. 2 shows a step of a method for manufacturing a first semiconductor chip according to the present invention.
Fig. 3 shows a step of a method of manufacturing a first semiconductor chip according to the present invention.
4 shows a step of a method of manufacturing a first semiconductor chip according to the present invention.
Fig. 5 shows a step of a method of manufacturing a first semiconductor chip according to the present invention.
6 shows a step of a method of manufacturing a first semiconductor chip according to the present invention.
Fig. 7 shows a step of a method of manufacturing a second semiconductor chip according to the present invention.
Fig. 8 shows a step of a method of manufacturing a second semiconductor chip according to the present invention.
Fig. 9 shows a step of a method of manufacturing a second semiconductor chip according to the present invention.

A method of manufacturing a first semiconductor chip according to the present invention includes the following steps (a) to (e).

(a) a step of adhering an adhesive film for die bonding to a circuit surface of a semiconductor wafer on which a circuit is formed (see Fig. 1)

(b) a step of laminating an adhesive film for die bonding and a surface protective sheet (see Fig. 2),

(c) a step of grinding the back surface of the semiconductor wafer and dividing the wafer into individual circuits to obtain a divided group of chips (see Fig. 3)

(d) a step of expanding the surface protective sheet to separate the die bonding adhesive film per chip, and obtaining a chip having an adhesive film for die bonding on the circuit surface (see Fig. 6); and

(e) a step of forming a modified region layer on the wafer, the laser light being incident on the back surface side of the wafer and being divided for each circuit,

The step (d) in the step (a) is carried out in this order or the step (b), the step (a), the step (c) and the step

Wherein the step (e) is performed prior to the step (c), and the wafer is divided into individual circuits from the modified region layer in the step (c).

The first semiconductor chip manufacturing method according to the present invention may include the following steps (f) and (g) in addition to the steps (a) to (e). (B), (c), (f), (g), and (g) in the case where the first semiconductor chip manufacturing method according to the present invention includes the steps (f) And (d) are carried out in this order, or (b), (a), (c), (f), (g) and e) The process is carried out before step (c).

(f) a step of attaching an adhesive sheet to the back surface of a group of chips divided (see Fig. 4).

(g) peeling the surface protective sheet to obtain a group of chips having an adhesive film for die bonding (see Fig. 5). In the case of including the steps (f) and (g), the adhesive sheet other than the surface protective sheet is expanded in the step (d).

Hereinafter, each process will be described.

(a) Process

(a), the die bonding adhesive film 3 is attached to the circuit surface of the semiconductor wafer 1 on which a circuit is formed (see Fig. 1).

In the method of manufacturing a semiconductor chip of the present invention, the adhesive film for die bonding is disposed on the picked-up chip circuit surface and has a function as a sealing resin for the circuit surface, And is used for filling and interlocking a space with a substrate for use.

As the resin used for such an adhesive film, in the step of adhering the adhesive film to the circuit surface of the wafer, the resin exhibits a certain degree of fluidity at room temperature or during heating by the pressing force, A resin which exhibits adhesiveness is used. Examples of such a resin include a B-stage resin, a point adhesive, and a thermoplastic resin.

As the resin of the B stage used for the adhesive film, for example, a layer made of a semi-cured epoxy resin can be mentioned.

The point adhesive used in the adhesive film refers to an adhesive which exhibits adhesiveness and fluidity at room temperature or in the range of 40 to 90 占 폚 and is cured by heating to become non-flowable and firmly adhere to the adherend. As the point adhesive, there can be mentioned, for example, a mixture of a binder resin and a thermosetting resin having a pressure-sensitive adhesive property at room temperature.

Examples of the binder resin having a pressure-sensitive adhesive property at room temperature include an acrylic resin, a polyester resin, a polyvinyl ether, a urethane resin, a polyamide, and a phenoxy resin. As the thermosetting resin, for example, an epoxy resin, an acrylic resin, a polyimide resin, a phenol resin, a urea resin, a melamine resin, a resorcinol resin and the like are used, and an epoxy resin is preferably used. The point adhesive may be blended with an energy ray (ultraviolet ray or the like) curable resin such as urethane (meth) acrylate oligomer or the like in order to control the releasability of the surface protective sheet to be described later. When the energy ray curable resin is blended, the surface protective sheet closely adheres to the pressure-sensitive adhesive layer before energy ray irradiation, and it becomes easy to peel off after the energy ray irradiation.

The above-mentioned respective point-stick adhesives can be adhered at room temperature and exhibit proper fluidity at room temperature or at the time of heating due to the pressing force, and have energy ray curability and heat curability. Therefore, It is possible to form a resin layer which is followed and void-free, which is brought into close contact with the surface protective sheet to grind the wafer during the back grinding, and can be used as an adhesive for bonding the chip and the chip mounting substrate at the time of mounting. In addition, it is possible to provide a cured product having a high impact resistance at the end through thermal curing, and besides, a balance between the shear strength and the peel strength is excellent, and sufficient adhesive property can be maintained even under severe heat and humidity conditions.

The thermoplastic resin used for the adhesive film is a resin that is plasticized by heating to exhibit adhesiveness. As such a thermoplastic resin, for example, a resin having chemical and physical heat resistance such as polyimide resin is preferable because the reliability of the semiconductor device is improved.

The thickness of the adhesive film 3 composed of the above components is usually 3 to 100 占 퐉, preferably 3 to 95 占 퐉, particularly preferably 5 to 85 占 퐉. On the other hand, when the bumps 2 are formed on the surface of the wafer, the average height H of the bumps 2 (the height H of the bumps 2) is set so as to cover the circuit surface without generating voids, B) and a thickness (T a of the bonding film 3) with the ratio (H B / T a) is preferably 1.0 / 0.3 to 1.0 / 0.95, more preferably from 1.0 / 0.5 to 1.0 / 0.9, and more preferably Is in the range of 1.0 / 0.6 to 1.0 / 0.85, particularly preferably 1.0 / 0.7 to 1.0 / 0.8. The average height H B of the bumps 2 is the height from the chip surface (the circuit surface excluding the bumps) to the bump portion, and when there are a plurality of bumps, the average height H B is dependent on the arithmetic mean of these.

If the bump height is too high with respect to the thickness of the adhesive film 3, a gap is formed between the chip surface (circuit surface excluding the bumps) and the chip mounting substrate, which may cause voids. On the other hand, if the adhesive film is too thick, the bump does not penetrate through the adhesive layer, which may cause conduction failure.

The adhesive film 3 can be used as a single layer as long as the operability is not deteriorated, but it can also be used as an adhesive sheet laminated on the support film 4. [

As the support film 4, for example, a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a polymethylpentene film, a polyvinyl chloride film, a polyvinyl chloride film, a polyurethane film, (Meth) acrylic acid copolymer film, an ethylene / (meth) acrylic acid ester copolymer film, and a fluororesin film are used. These crosslinked films are also used. Further, these laminated films may be used. These films may be transparent films, colored films or opaque films. However, when the support film is too hard, it is particularly preferable to use a film having appropriate elasticity because there is a possibility that the bump portion is crushed. In order to transfer the adhesive film on the support film to the circuit surface of the chip (wafer), the support film and the adhesive film are laminated so as to be peelable. Therefore, the surface tension of the surface of the support film in contact with the adhesive film is preferably 40 mN / m or less, more preferably 37 mN / m or less, particularly preferably 35 mN / m or less. Such a film having a low surface tension can be obtained by appropriately selecting a material and can also be obtained by applying a releasing agent such as silicone resin or alkyd resin to the surface of the support film and performing the peeling treatment.

The thickness of such a support film is usually 10 to 500 mu m, preferably 15 to 300 mu m, particularly preferably 20 to 250 mu m or so.

When the support film 4 is continuously subjected to the step (b), it may be peeled from the adhesive film 3 before that.

As the semiconductor wafer 1, a conventionally used semiconductor wafer such as a silicon semiconductor wafer or a gallium arsenide semiconductor wafer can be used. However, the present invention is not limited to this and various semiconductor wafers can be used. Circuit formation on the wafer surface can be carried out by various methods including conventional methods such as an etching method and a lift-off method. In the circuit forming step of the wafer, a predetermined circuit is formed. Further, on the circuit surface, it is preferable that a conductive protrusion (bump) 2 used for conducting with the chip mounting substrate is formed. The height and diameter of the bump 2 vary depending on the design of the semiconductor device, but generally the height is about 10 to 100 mu m and the diameter is about 20 to 100 mu m. These bumps 2 are often formed of metal such as gold, copper, or solder. The shape of the bump 2 is not particularly limited, but may be a shape in which a hemisphere is placed on the tip of a circumference as shown in Fig. 1, in addition to a cylindrical shape or a spherical shape.

The method of attaching the adhesive film 3 to the surface of the wafer 1 is not particularly limited and is carried out by a general method using a tape mounter or the like. When attaching the adhesive sheet to the surface of the wafer 1, the adhesive film 3 is transferred to the surface of the wafer 1, and the support film 4 is peeled off. Further, the adhesive film 3 and the supporting film 4 may be cut in advance in substantially the same shape as the semiconductor wafer 1, and after the film is attached to the wafer, the extra film is cut and removed along the outer periphery of the wafer do.

(b)

(b), the die bonding adhesive film 3 and the surface protection sheet 7 are laminated (see Fig. 2).

The surface protective sheet 7 is attached in order to retain the wafer 1 and protect the circuit surface in a back grinding step (step (c)) described later.

As the surface protective sheet 7, various kinds of pressure sensitive adhesive sheets or the like which are used in this kind of application are not particularly limited.

Further, when the step (g) to be described later is carried out, the adhesive film 3 and the surface protective sheet 7 are separated from each other at the interface between the adhesive film 3 and the surface protective sheet 7, Respectively.

When the adhesive film 3 has a pressure-sensitive adhesive property, the surface protective sheet 7 does not necessarily need to be sticky and is called a resin film. Examples of such a resin film include resins such as a polyethylene terephthalate film, a polyethylene naphthalate film, a polybutylene terephthalate film, a polystyrene film, a polycarbonate film and a polyimide film, in addition to those exemplified above as the support film (4) Film is used. These crosslinked films are also used. Or a laminated film thereof.

When the adhesive film 3 does not have a pressure-sensitive adhesive property, the surface protective sheet 7 may be a resin film having a tuck itself, or may be a resin film having a releasable pressure- Or an adhesive sheet.

When the adhesive film 3 does not have energy ray curability, the energy ray-curable pressure-sensitive adhesive sheet can be used as the surface protective sheet 7. The pressure-sensitive adhesive layer of the energy ray-curable pressure-sensitive adhesive sheet is cured by energy rays such as ultraviolet rays and has a property of losing the adhesive force. Therefore, after attaching the energy ray-curable pressure-sensitive adhesive sheet to the surface of the adhesive film 3 and applying the energy ray to the pressure-sensitive adhesive layer after the back-grinding process, the adhesive force is lost and the adhesive film 3 and the surface- It is possible to easily carry out the peeling at the interface between the substrate and the substrate. Further, the pressure-sensitive adhesive sheet of the energy ray-curable pressure-sensitive adhesive sheet may be irradiated with energy rays in advance to reduce the tackiness.

In the case of performing the steps (f) and (g) described below, the shape of the surface protection sheet 7 is not particularly limited, and the shape substantially identical to the shape of the wafer 1 It may be a large shape. In this case, the adhesive sheet attached in the step (f) may be expanded to separate the adhesive film 3.

On the other hand, when the step (f) and the step (g) are not carried out, the shape of the surface protective sheet 7 is preferably larger than that of the wafer 1. [ In this case, the surface protective sheet 7 can be expanded to separate the adhesive film 3. That is, when the surface protection sheet 7 has such a shape, the surplus portion of the surface protection sheet 7 can be attached to a fixture such as a ring frame. Therefore, it becomes possible to expand the surface protective sheet 7.

The surface protective sheet 7 having the above-described shape may be cut in advance into a substantially same shape as the wafer 1 or larger than the wafer 1 and laminated with the die bonding adhesive film 3, The extra sheet may be cut or removed along the outer periphery of the wafer 1 or in a shape larger than the wafer 1 after the surface protective sheet 7 is attached through the die bonding adhesive film 3.

The thickness of the surface protective sheet 7 is usually 20 to 1000 占 퐉, preferably 50 to 250 占 퐉. When the surface protective sheet 7 has a pressure-sensitive adhesive layer, the thickness of the pressure-sensitive adhesive layer is 5 to 500 占 퐉, preferably 10 to 100 占 퐉, among the above thicknesses. The method of laminating the adhesive film and the surface protective sheet is not particularly limited, and is carried out by a general-purpose method using a tape mounter or the like as in the step (a).

When the step (b) is carried out before the step (a), the adhesive film for die bonding and the surface protective sheet are laminated to obtain a laminated sheet, and the adhesive film for die bonding of the laminated sheet is laminated on the circuit surface .

The method of producing the laminated sheet is not particularly limited, and the adhesive film on the support film may be transferred to the surface protection sheet, or the adhesive film may be formed by directly applying the mixture constituting the adhesive film to the surface protection sheet so as to have a predetermined film thickness do. The method of adhering the adhesive film of the laminated sheet to the circuit surface of the semiconductor wafer is not particularly limited and is carried out by a general method using a tape mounter or the like as in the step (a).

(c)

In the step (c), the back surface of the semiconductor wafer 1 is ground, and the wafer 1 is divided into individual pieces for each circuit to obtain a divided group of chips 100 (see FIG. 3). Also, before the step (c), a step (e) described later is carried out, and a modified region layer is formed on the wafer in the vicinity of the surface thereof for each circuit.

The backside grinding of the wafer 1 is performed by a method using a grinder or the like. The backside grinding reduces the thickness of the wafer 1 and propagates the backside grinding stress to the modified region layer formed in the vicinity of the surface of the wafer 1 so that the wafer 1 is held by the chips 10 ). The thickness of each chip 10 divided by the back grinding of the wafer 1 is about 15 to 400 mu m.

Following the step (c), the following steps (f) and (g) may be carried out.

(f)

In the step (f), the adhesive sheet 13 is attached to the back surface of the divided group of chips 100 (see Fig. 4). The pressure-sensitive adhesive sheet (13) is obtained by forming a pressure-sensitive adhesive layer (11) on a substrate (12).

The pressure-sensitive adhesive layer (11) can be formed by various known pressure-sensitive adhesives. Such pressure-sensitive adhesives are not limited, and for example, pressure-sensitive adhesives such as rubber, acrylic, silicone, and polyvinyl ether are used. In addition, an energy ray curable type, a heated foaming type, and a water swelling type adhesive may be used. As the energy line curing (ultraviolet curing, electron beam curing) type pressure-sensitive adhesive, it is preferable to use an ultraviolet curing type pressure-sensitive adhesive.

The pressure-sensitive adhesive layer 11 is adhered to the ring frame 5 at the outer periphery thereof when manufacturing a chip described later (see Fig. 4).

(The adhesive force of the SUS plate after heating for 2 hours at 130 占 폚 after adhering) of the pressure-sensitive adhesive sheet in the portion to be attached to the ring frame (outer peripheral portion of the pressure-sensitive adhesive sheet) is preferably 15 N / 25 mm or less, 10 N / 25 mm or less, particularly preferably 5 N / 25 mm or less. By setting the adhesive force in the outer peripheral portion of the pressure-sensitive adhesive sheet within the above-described range, adhesion to the ring frame is excellent and it is possible to prevent the residue of the adhesive on the ring frame.

The thickness of the pressure-sensitive adhesive layer 11 is not particularly limited, but is preferably 1 to 100 占 퐉, more preferably 2 to 80 占 퐉, particularly preferably 3 to 50 占 퐉.

The substrate 12 is not particularly limited and examples thereof include a polyethylene film such as a low density polyethylene (LDPE) film, a linear low density polyethylene (LLDPE) film and a high density polyethylene (HDPE) film, a polypropylene film, a polybutene film, A vinyl chloride copolymer film, an ethylene-vinyl acetate copolymer film, a polyethylene terephthalate film, a polybutylene terephthalate film, a polyurethane film, a polyimide film, an ethylene-vinyl acetate copolymer film, A film made of an ethylene · (meth) acrylic acid copolymer film, an ethylene · (meth) acrylate copolymer film, a polystyrene film, a polycarbonate film, a fluororesin film and hydrogenated products thereof or the like may be used. These crosslinked films or laminated films can also be used.

Further, when ultraviolet rays are used as energy rays to be irradiated for curing the pressure-sensitive adhesive layer 11, a substrate having transparency to ultraviolet rays is preferable. When an electron beam is used as the energy ray, the substrate is not required to have light transmittance. If the substrate is colored, it is preferable that the adhesive sheet is adhered to the chip 100 of the first group because the operator can visually confirm that the adhesive sheet is adhered. When the visibility of the adherend surface is required, the substrate is preferably transparent.

Further, a corona treatment may be performed or a primer layer may be provided on the upper surface of the substrate 12, that is, on the surface of the substrate on the side where the pressure-sensitive adhesive layer 11 is provided, in order to improve the adhesion with the pressure-sensitive adhesive layer. Further, various coating films may be coated on the surface opposite to the pressure-sensitive adhesive layer. The pressure-sensitive adhesive sheet (13) of the present invention is produced by providing a pressure-sensitive adhesive layer (11) on one side of the substrate (12). The thickness of the substrate 12 is preferably in the range of 20 to 200 mu m, more preferably 25 to 110 mu m, particularly preferably 50 to 90 mu m. When the thickness of the base material 12 is large, the force against the warpage of the base material 12 becomes large, and the peeling angle at the time of picking up is difficult to increase. For this reason, the force required for pick-up is increased, which may deteriorate the pick-up performance. When the thickness of the base material 12 is small, the film formation may be difficult depending on the material.

In the method of providing the pressure-sensitive adhesive layer on the surface of the substrate, the pressure-sensitive adhesive composition constituting the pressure-sensitive adhesive layer may be applied on the release sheet so as to have a predetermined film thickness to form a pressure- The pressure-sensitive adhesive composition may be directly applied to the surface of the pressure-sensitive adhesive layer to form the pressure-sensitive adhesive layer. As the release sheet, the same support film as the above-mentioned support film can be used. The method of attaching the adhesive sheet 13 is not particularly limited, and it is carried out by a general-purpose method using a tape-mounter or the like as in the step (a).

(g) Process

(g), the surface protective sheet 7 is peeled off to obtain a group of chips 100 having the adhesive film 3 for die bonding (see Fig. 5). The method of peeling the surface protective sheet 7 is not particularly limited.

(d)

In the step (d), the surface protective sheet 7 or the adhesive sheet 13 is expanded to separate the die bonding adhesive film 3 on a chip-by-chip basis, and a die having an adhesive film 3 for die- (10). Fig. 6 shows that the adhesive sheet 13 is expanded. When the steps (f) and (g) are carried out following the step (c), the pressure-sensitive adhesive sheet is expanded in the subsequent step (d). When the step (d) is followed by the step (c), the surface protective sheet is expanded in the step (d).

By holding the die-bonding adhesive film 3 at the expense, preferably at 15 캜 or lower, and more preferably at -10 캜 to 10 캜, the stress (expanding force) It becomes easy to propagate to the film, so that the adhesive film is deformed and the adhesive film is easily separated into individual chips. The adhesive film adhered to the chip 10 is not extended because the deformation thereof is constrained to the chip. However, since the adhesive film positioned between the chips is not constrained by deformation, the adhesive film is cut into substantially the same shape as the chip by stretching. It is preferable that the expand is performed at a speed of 1 to 300 mm / sec.

(e)

(e) is carried out before the step (c), and in the step (e), a modified region layer which forms laser light incident on the back surface side of the wafer and is divided for each circuit is formed in the vicinity of the surface of the wafer. The laser light is irradiated from a laser light source. The laser light source is a device that generates light having a constant wavelength and phase. Examples of the types of laser light include Nd-YAG laser, Nd-YVO laser, Nd-YLF laser, and titanium sapphire laser that generate pulsed laser light. . The wavelength of the laser beam is preferably 800 to 1100 nm, and more preferably 1064 nm.

The laser light is irradiated inside the wafer to form a modified region layer in the wafer along the line along which the object is intended to be cut. The number of times the laser beam is scanned on one line along which the object is intended to be cut may be once or several times. Preferably, the irradiation position of the laser light and the position of the line to be cut between the circuits are monitored, and the laser light is irradiated while adjusting the position of the laser light. It is possible to form the modified region layer in the vicinity of the surface by setting the light-converging point of the laser light near the surface of the wafer.

A semiconductor chip with an adhesive film can be obtained by the above steps (a) to (g).

The method for manufacturing the second semiconductor chip according to the present invention includes the following steps (a ') to (e').

(a ') a step of adhering an adhesive film for die bonding to a circuit surface of a semiconductor wafer on which a circuit is formed (see Fig. 1)

(b ') a step of laminating an adhesive film for die bonding and a surface protective sheet (see Fig. 2)

(c ') a step of grinding the back surface of the semiconductor wafer (see Fig. 7)

(d ') a step of expanding the surface protective sheet to obtain a chip having an adhesive film for die bonding on the circuit surface by separating the die bonding adhesive film per chip (see Fig. 6), and

(e ') a step of forming a modified region layer on the wafer by irradiating laser light on the wafer backside side and dividing the wafer by circuit,

The step (d ') in the step (a') is carried out in this order or the step (b '), the step (a'), the step (c ') and the step (d'

Wherein the step (e ') is performed after the step (c') and before the step (d ').

The second semiconductor chip manufacturing method according to the present invention may include the following steps (f ') and (g') in addition to the steps (a ') to (e'). (A '), (b'), (c '), (f'), and (f ') in the case where the second semiconductor chip manufacturing method according to the present invention includes the steps (f' (B '), (a'), (c), (f '), (g') and (d ') is carried out in this order, and the step (e') is carried out after the step (c ') and before the step (d').

(f ') Step of attaching the adhesive sheet to the back surface of the semiconductor wafer (see Fig. 8).

(g ') Step of peeling the surface protective sheet and obtaining a semiconductor wafer having an adhesive film for die bonding (see Fig. 9). When the step (f ') or (g') is included, the adhesive sheet other than the surface protective sheet is expanded in the step (d ').

Hereinafter, each process will be described. The processes (a ') and (b') are the same as the processes (a) and (b) in the above-described first semiconductor chip fabrication method, and the description thereof will be omitted.

( c ' )fair

In the step (c '), the back surface of the semiconductor wafer is ground (see Fig. 7). The backside grinding of the wafer 1 is performed by a method using a grinder or the like. The thickness of the wafer 1 is reduced by back-grinding, and the thickness of the wafer 1 is about 15 to 400 mu m.

(F ') and (g') may be performed subsequent to the step (c '), similarly to the above-described first semiconductor chip manufacturing method.

( f ' )fair

(f '), the adhesive sheet 13 is attached to the back surface of the semiconductor wafer 1 (see Fig. 8). The adhesive sheet 13 is the same as the adhesive sheet 13 in the step (f) described above. The method of attaching the adhesive sheet 13 is not particularly limited, and it is carried out by a general-purpose method using a tape-mounter or the like as in the step (a).

( g ' )fair

In the step (g '), the surface protective sheet 7 is peeled off to obtain a semiconductor wafer 1 having an adhesive film 3 for die bonding (see Fig. 9). The method of peeling the surface protective sheet 7 is not particularly limited.

( d ' )fair

In the step (d '), the surface protective sheet 7 or the adhesive sheet 13 is expanded to separate the die bonding adhesive film 3 per chip, and the adhesive film 3 for die bonding is formed on the circuit face Thereby obtaining a chip 10 (see Fig. 6). (f ') and (g), the pressure-sensitive adhesive sheet is expanded in the subsequent step (d'). When the step (d ') is followed by the step (c'), the surface protective sheet is expanded in the step (d '). Further, after the step (c ') and before the step (d'), a step (e ') described later is carried out to form a modified region layer for each circuit on the wafer.

When the semiconductor wafer 1 is not separated at the time when the step (d ') is carried out, the surface protective sheet 7 or the pressure sensitive adhesive sheet 13 is expanded so that the stress generated by the expand Is transferred to the modified region layer inside the wafer, and the wafer 1 and the adhesive film 3 for die bonding are separated from each other on the basis of the modified region layer.

Prior to the step (d '), the semiconductor wafer 1 may be divided into chips by means of impacting the semiconductor wafer 1 to cleave the modified region by the instrument. In this case, the adhesive film 3 for die bonding is divided into individual circuits by the expanding of the surface protective sheet 7 or the adhesive sheet 13.

In the expanding process, the die bonding adhesive film 3 is preferably maintained at 15 ° C or lower, more preferably -10 ° C to 10 ° C, so that the expanding force is easily transmitted to the inter-chip adhesive film, It becomes easy to deform the adhesive film for each chip. It is preferable that the expand is performed at a speed of 1 to 300 mm / sec.

( e ' )fair

(e ') process is performed after the process (c') and before the process (d '), and in the process (e'), the laser light is incident on the back surface of the wafer to form a modified region layer . In the step (c '), since the wafer is ground-back and the thickness of the wafer becomes sufficiently thin, it is not necessary to set the light-converging point of the laser light near the surface of the wafer in the step (e'). The conditions other than the light-converging point of the laser light are the same as those in the step (e), and the description is omitted.

By the steps (a ') - (g') as described above, a semiconductor chip with an adhesive film can be obtained.

The semiconductor chip with the adhesive film obtained by the first and second semiconductor chip manufacturing methods according to the present invention is continuously picked up. The pickup of the chip with the adhesive film may be carried out directly from the surface protective sheet 7 or the adhesive sheet 13 and the chip with the adhesive film may be transferred from the surface protective sheet 7 or the adhesive sheet 13 to another adhesive sheet The chips with adhesive films may be picked up from the other adhesive sheets. As such another pressure sensitive adhesive sheet, a pressure sensitive adhesive sheet having a suitable pressure-sensitive adhesive property and re-releasability is preferable, and a UV-curable pressure sensitive adhesive sheet used conventionally as a dicing sheet is preferably used.

Pick-up of a chip with an adhesive film can be carried out by a known method using a suction cullet or the like. If necessary, a chip with an adhesive film may be pushed up from the back side of the adhesive sheet 13 or another adhesive sheet with an extruding pin.

The chip with the adhesive film picked up may be transferred to the next step as it is or after the inversion process of the chip, and may be stored on a transfer tape once or in a storage container, and may be used in the next step if necessary.

Then, the chip with the adhesive film is placed at a predetermined position of the electrode portion of the chip mounting substrate via the adhesive film (3). Specifically, a chip having the adhesive film 3 on the circuit surface side is mounted on a predetermined chip mounting substrate by a face down method. In a chip having bumps, the bumps are placed so as to face the corresponding terminal portions on the chip mounting board.

Thereafter, the die-bonded adhesive-film-attached chip is heated to fix the chip to the chip-mounting substrate. The adhesive film 3 is formed of a B-stage resin, a point adhesive, a thermoplastic resin or the like which exhibits adhesiveness by heating as described above. When these are heated under predetermined conditions to form a B-stage resin, the resin is cured to exhibit adhesiveness. If the resin is a point-adhesive, the thermosetting resin contained therein exhibits adhesion. Further, in the case of a thermoplastic resin, an adhesive force is exhibited by a heat seal.

After the die bonding (flip chip bonding) in this way, a semiconductor device is obtained through a usual process such as resin sealing if necessary.

Although the method of manufacturing the semiconductor chip of the present invention has been described above with reference to the drawings, the present invention is not limited to the method of manufacturing the semiconductor chip having the above-described structure, and can be applied to a method of manufacturing a semiconductor chip having various structures.

1: semiconductor wafer 2: bump
3: Adhesive film 4: Support film
5: ring frame 7: surface protection sheet
10: semiconductor chip 13: pressure sensitive adhesive sheet

Claims (4)

(a) a step of adhering an adhesive film for die bonding to a circuit surface of a semiconductor wafer on which a circuit is formed,
(b) a step of laminating an adhesive film for die bonding and a surface protective sheet,
(c) a step of grinding the back surface of the semiconductor wafer and dividing the wafer into individual circuits to obtain a divided group of chips,
(d) exposing the surface protective sheet to individual chips for die bonding, and obtaining a chip having an adhesive film for die bonding on the circuit surface; and
(e) a step of forming a modified region layer on the wafer, the laser light being incident on the back surface side of the wafer and being divided for each circuit,
The step (d) in the step (a) is carried out in this order or the step (b), the step (a), the step (c) and the step
Wherein the step (e) is performed prior to the step (c), and the wafer is divided into individual circuits from the modified region layer in the step (c).
(a) a step of adhering an adhesive film for die bonding to a circuit surface of a semiconductor wafer on which a circuit is formed,
(b) a step of laminating an adhesive film for die bonding and a surface protective sheet,
(c) a step of grinding the back surface of the semiconductor wafer and dividing the wafer into individual circuits to obtain a divided group of chips,
(f) a step of adhering an adhesive sheet to the back surface of a group of chips divided,
(g) peeling the surface protective sheet and obtaining a group of chips having an adhesive film for die bonding,
(d) expanding the pressure-sensitive adhesive sheet to separate the die-bonding adhesive film for each chip, and obtaining a chip having an adhesive film for die bonding on the circuit surface, and
(e) a step of forming a modified region layer on the wafer, the laser light being incident on the back surface side of the wafer and being divided for each circuit,
(a), (b), (c), (f), (g) and (d) The step (f), the step (g) and the step (d) are carried out in this order,
Wherein the step (e) is performed prior to the step (c), and the wafer is divided into individual circuits from the modified region layer in the step (c).
(a ') a step of adhering an adhesive film for die bonding to a circuit surface of a semiconductor wafer on which a circuit is formed,
(b ') a step of laminating an adhesive film for die bonding and a surface protective sheet,
(c ') a step of grinding the back surface of the semiconductor wafer,
(d ') a step of expanding the surface protective sheet to separate the die-bonding adhesive film for each chip, and obtaining a chip having an adhesive film for die bonding on the circuit surface, and
(e ') a step of forming a modified region layer on the wafer by making a laser light incident on the back surface side of the wafer and partitioning each circuit,
The step (d ') in the step (a') is carried out in this order or the step (b '), the step (a'), the step (c ') and the step (d'
Wherein the step (e ') is carried out after the step (c') and before the step (d ').
(a ') a step of adhering an adhesive film for die bonding to a circuit surface of a semiconductor wafer on which a circuit is formed,
(b ') a step of laminating an adhesive film for die bonding and a surface protective sheet,
(c ') a step of grinding the back surface of the semiconductor wafer,
(f ') a step of adhering the adhesive sheet to the back surface of the semiconductor wafer,
(g ') peeling the surface protective sheet, and obtaining a semiconductor wafer having an adhesive film for die bonding,
(d ') a step of expanding the adhesive sheet to separate the die-bonding adhesive film for each chip, and obtaining a chip having an adhesive film for die bonding on the circuit surface, and
(e ') a step of forming a modified region layer on the wafer by making a laser light incident on the back surface side of the wafer and partitioning each circuit,
(a '), (b'), (c '), (f'), (g ') and (d' (a '), (c'), (f '), (g') and (d '
Wherein the step (e ') is carried out after the step (c') and before the step (d ').

KR1020140022823A 2013-02-27 2014-02-26 Method For Menufacturing Semiconductor Chip KR20140107141A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-037774 2013-02-27
JP2013037774A JP2014165462A (en) 2013-02-27 2013-02-27 Semiconductor chip manufacturing method

Publications (1)

Publication Number Publication Date
KR20140107141A true KR20140107141A (en) 2014-09-04

Family

ID=51615773

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140022823A KR20140107141A (en) 2013-02-27 2014-02-26 Method For Menufacturing Semiconductor Chip

Country Status (3)

Country Link
JP (1) JP2014165462A (en)
KR (1) KR20140107141A (en)
TW (1) TW201501222A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170085482A (en) * 2014-11-13 2017-07-24 스미토모덴키고교가부시키가이샤 Negative electrode composition for electric storage device, negative electrode including the composition, electric storage device, and method for producing negative electrode for electric storage device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6703485B2 (en) * 2014-09-29 2020-06-03 リンテック株式会社 Base material for semiconductor wafer processing sheet, semiconductor wafer processing sheet, and method for manufacturing semiconductor device
JP6456766B2 (en) * 2015-05-08 2019-01-23 株式会社ディスコ Wafer processing method
KR102538766B1 (en) * 2015-11-04 2023-05-31 린텍 가부시키가이샤 Curable resin film and sheet for forming the first protective film
JP6692580B2 (en) * 2016-08-15 2020-05-13 株式会社ディスコ Device chip and manufacturing method thereof
JP7157301B2 (en) * 2017-11-06 2022-10-20 株式会社東京精密 Wafer processing method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI318649B (en) * 2003-06-06 2009-12-21 Hitachi Chemical Co Ltd Sticking sheep, connecting sheet unified with dicing tape,and fabricating method of semiconductor device
JP4563097B2 (en) * 2003-09-10 2010-10-13 浜松ホトニクス株式会社 Semiconductor substrate cutting method
JP4440582B2 (en) * 2003-09-10 2010-03-24 浜松ホトニクス株式会社 Semiconductor substrate cutting method
JP5032231B2 (en) * 2007-07-23 2012-09-26 リンテック株式会社 Manufacturing method of semiconductor device
JP5163358B2 (en) * 2008-03-26 2013-03-13 日立化成株式会社 Semiconductor wafer dicing method
JP2012209386A (en) * 2011-03-29 2012-10-25 Lintec Corp Film-shaped semiconductor chip adhesive agent, semiconductor processing adhesive sheet, and semiconductor device manufacturing method
JP2012222002A (en) * 2011-04-04 2012-11-12 Nitto Denko Corp Dicing die-bonding film and semiconductor device manufacturing method
JP2013008831A (en) * 2011-06-24 2013-01-10 Disco Abrasive Syst Ltd Processing method of wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170085482A (en) * 2014-11-13 2017-07-24 스미토모덴키고교가부시키가이샤 Negative electrode composition for electric storage device, negative electrode including the composition, electric storage device, and method for producing negative electrode for electric storage device

Also Published As

Publication number Publication date
JP2014165462A (en) 2014-09-08
TW201501222A (en) 2015-01-01

Similar Documents

Publication Publication Date Title
JP5032231B2 (en) Manufacturing method of semiconductor device
JP2006203133A (en) Manufacturing method of chip body, manufacturing method of device and adhesive sheet for fixing chip body
KR20140107141A (en) Method For Menufacturing Semiconductor Chip
JP6580447B2 (en) Adhesive sheet and method for manufacturing semiconductor device
KR102535477B1 (en) Die bonding/dicing sheet
JP2006261529A (en) Underfill tape for flip chip mount and manufacturing method of semiconductor device
JP2012209386A (en) Film-shaped semiconductor chip adhesive agent, semiconductor processing adhesive sheet, and semiconductor device manufacturing method
JP6482866B2 (en) Manufacturing method of semiconductor device
JP7317187B2 (en) Semiconductor device manufacturing method
JP5522773B2 (en) Semiconductor wafer holding method, chip body manufacturing method, and spacer
JP5455443B2 (en) Wafer processing sheet
JP2005209940A (en) Method for manufacturing semiconductor device
US20140290843A1 (en) Method of preparing an adhesive film into a precut semiconductor wafer shape on a dicing tape
JP2011054648A (en) Method of manufacturing semiconductor device
JP2008098428A (en) Method of manufacturing semiconductor device
JP2005243910A (en) Manufacturing method of semiconductor chip
JP6058414B2 (en) Manufacturing method of semiconductor chip
JP2017139409A (en) Die-bonding dicing sheet
WO2022210701A1 (en) Method for manufacturing individual processed workpiece with resin film, and apparatus for manufacturing individual processed workpiece with resin film
JP3222090U (en) Die bond dicing sheet
JP2010239030A (en) Method of processing semiconductor wafer
JP2009200429A (en) Manufacturing method of semiconductor device
TW202305903A (en) Protection film-provided chip manufacturing method
CN116544106A (en) Wafer cutting method and crystal grain
CN113913122A (en) Production method of heating peelable adhesive tape

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination