KR20140085040A - organic light-emitting dIODE DISPLAY device - Google Patents

Abstract

In the present invention, disclosed is an organic light emitting display device. More particularly, the present invention relates to a flexible organic light emitting display device capable of reducing defects due to warpage generated on a panel by moisture on a multilayer-structured flexible display panel manufactured with a plastic substrate. According to the embodiment of the present invention, deformation due to the moisture permeated to a polarization film is minimized by spraying a sealing material to cover each side of the polarization film attached on the panel. Thereby, damage to the flexible organic light emitting display device due to the contraction of the polarization film is prevented.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a flexible organic light-

The present invention relates to an organic light emitting diode display, and more particularly, to a flexible organic light emitting diode display device which is manufactured using a plastic substrate to improve breakage defects due to warping generated in a panel by moisture permeation in a multi- will be.

A flat panel display device proposed to replace a conventional cathode ray tube display device includes a liquid crystal display device, a field emission display device, a plasma display device, (Plasma Display Panel) and an organic light-emitting diode (OLED) display.

In the organic light emitting display, the organic light emitting diode provided in the display panel has a high luminance and low operating voltage characteristics, and is self-emitting type that emits light by itself. Therefore, the organic light emitting display has a high contrast ratio, It has the advantage that it can be implemented. In addition, the response time is as small as several microseconds (μs), the moving image is easy to implement, the viewing angle is not limited, and the characteristic is stable even at low temperatures.

FIG. 1 is a view showing a schematic structure of an OLED display according to a related art, and FIG. 2 is a cross-sectional view taken along the line II-II 'of FIG.

Referring to FIGS. 1 and 2, a conventional OLED display is divided into a display area A / A defined on the substrate 10 and a non-display area N / A outside the display area A / A. Although not shown, a plurality of pixel regions defined by scan wirings and data wirings are defined in the display area A / A. Particularly, the non-display area N / A of the organic light emitting display has a plurality of stacked structures extending from the display area A / A, and at least the non-display area N / The gate insulating film 14, the thin film transistor 15, the first passivation film 20, the organic film 31, the second passivation film 33, the adhesive 35, the protective film 37, And a film (90).

The second passivation film 33 and the protective film 37 in the laminated structure of the second passivation film 33, the adhesive 35 and the protective film 37 are referred to as a face seal structure, However, the polarizing film 90 on the upper side has a characteristic of being relatively vulnerable to moisture permeation.

In the case where the ambient environment of the organic light emitting display device is in a state where water can easily flow, in particular, moisture flows into the inside easily through the side surface of the polarizing film 90, so that the polarizing film 90 contracts, . Here, since the polarizing film 90 is fixed to the lower protective film 37, the force acts in the direction P2 from the P1 direction due to the shrinkage. As a result, the first passivation 20 and the adhesive 35) in the direction of P2, resulting in breakage in the outer part (a).

In this damaged portion (a), water (w) flows into the organic light emitting display device, and the influent water (w) causes the internal elements to corrode.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a flexible organic EL display device in which a polarizing film is shrunk by moisture introduced from the outside, Emitting display device.

In order to achieve the above-mentioned object, a flexible organic light emitting display according to a preferred embodiment of the present invention is characterized in that a plurality of pixels are defined, and at least one thin film transistor and an organic light emitting diode are contained in the pixel, An attached substrate; A polarizing film attached on the protective film; And a sealing material applied in such a manner as to frame each side of the polarizing film.

According to another aspect of the present invention, there is provided a method of fabricating a flexible organic light emitting display, comprising: forming a thin film transistor and an organic light emitting diode in a pixel on a substrate on which a plurality of pixels are defined; Attaching; Attaching a polarizing film on the protective film; And applying a sealing material in a form to frame each side of the polarizing film.

According to the embodiment of the present invention, the edge of the polarizing film attached to the surface of the flexible organic light emitting display device is sealed by using a sealing material, thereby minimizing the deformation of moisture penetrating into the polarizing film. Thus, there is an effect of preventing breakage of the flexible organic light emitting display device due to shrinkage of the polarizing film.

FIG. 1 is a view showing a schematic structure of an OLED display according to a related art.
FIG. 2 is a sectional view taken along the line II-II 'of FIG. 1. FIG.
3 is a plan view schematically showing an organic light emitting diode display according to an embodiment of the present invention.
4 is a sectional view taken along the line IV-IV 'in FIG.
5A to 5H are views showing a method of manufacturing a flexible organic light emitting display according to an embodiment of the present invention.

Hereinafter, a flexible organic light emitting display according to a preferred embodiment of the present invention will be described with reference to the drawings.

Hereinafter, an OLED display according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings. In general, the organic light emitting display device is divided into two structures of a top emission type and a bottom emission type according to a transmission direction of emitted light. In the following description, The technical structure of the present invention will be described as an example of a light emitting display.

FIG. 3 is a plan view schematically showing an organic light emitting display according to an embodiment of the present invention, and FIG. 4 is a sectional view taken along the line IV-IV 'of FIG.

3 and 4, the organic light emitting diode display according to the present invention includes a display area A / A for displaying an image on a substrate 101 having a flexible characteristic, a display area A / A non-display area N / A surrounding the outside is defined.

Although not shown, a plurality of pixels PX defined by a plurality of scan lines (not shown) and data lines (not shown) are provided in the display area A / A, and data lines (not shown) And a power supply wiring (not shown) is provided side by side. Although not shown, a driving driver (not shown) electrically connected to the pixel PX and providing various signals may be mounted on one side of the non-display area N / A.

Here, the flexible substrate 101 may be made of a flexible plastic material having flexible characteristics so that the display performance can be maintained even if the organic light emitting display device is bent like a paper.

A buffer layer (not shown) made of silicon oxide (SiO ₂ ) or silicon nitride (SiN x), which is an inorganic insulating material, may be formed on the substrate 100. The buffer layer (not shown) is formed to minimize the problem of deterioration of the characteristics of the semiconductor layer 103 due to the release of the alkali ions from the inside of the substrate 100 in the subsequent crystallization process of the semiconductor layer 103, It is optional.

Each pixel PX in the display area A / A above the buffer layer (not shown) includes at least one switching thin film transistor and a driving thin film transistor for controlling the organic light emitting diode. Only the driving thin film transistor TR is shown in the drawing. The first region 103a and the second region 103b are formed of pure polysilicon corresponding to the respective thin film transistors TR and have a central portion formed by a first region 103a and a second region 103b doped with a high concentration of impurities 103b, and 103c are formed.

On the buffer layer including the semiconductor layer 103, a gate insulating film 105 is formed.

A gate electrode 107 is formed on the gate insulating film 105 in correspondence with the first region 103a of the semiconductor layer 103 in each thin film transistor TR.

A scan line (not shown) extending in one direction is formed on the same layer as the gate electrode 107 and connected to the gate electrode 107 of a switching thin film transistor (not shown). Here, the gate electrode 107 and the scan wiring are made of a first metal material having a low resistance property such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo) (MoTi), or a double layer or a triple layer structure composed of two or more first metal materials. In the drawing, an example is shown in which the gate electrode 107 and the scan wiring have a single-layer structure.

An interlayer insulating film 109 made of silicon oxide (SiO ₂ ) or silicon nitride (SiNx), which is an inorganic insulating material, for example, is formed on the entire display region of the substrate including the gate electrode 107 and the scan wiring SL. . The interlayer insulating film 109 and the gate insulating film 105 below the semiconductor layer 103 expose the second regions 103b and 103c located on both sides of the first region 103a of the semiconductor layer 103, (Not shown).

On the upper part of the interlayer insulating film 109 including the semiconductor layer contact holes, a data wiring which crosses the scan wiring and defines the pixel PX, and a power supply wiring which is arranged in parallel with the data wiring are formed. Here, the data line and the power supply line are formed of a second metal material such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum (MoTi) ) And titanium (Ti), or a combination of two or more materials.

In particular, the power supply line may be formed not in the same layer as the data line but in the upper portion of the gate insulating film 105 on which the scan line is formed, and in parallel with the scan line.

The thin film transistors are connected to the second regions 103b and 103c exposed through the semiconductor layer contact holes (not shown) on the upper portion of the interlayer insulating film 109, A drain electrode 113a and a drain electrode 113b are formed. At this time, the source electrode 113a and the drain electrode 113b, which are sequentially formed on the semiconductor layer 103, the gate insulating film 105, the gate electrode 107, and the interlayer insulating film 109, (TR).

Here, the source electrode 113a and the drain electrode 113b of the driving thin film transistor TR all have a single layer structure as an example. However, the source electrode 113a and the drain electrode 113b may have a double layer structure or a triple layer structure by combining two metal materials .

Though not shown in the drawing, each pixel includes a switching thin film transistor (not shown) having the same stacking structure as the driving thin film transistor TR. Here, a switching thin film transistor (not shown) is electrically connected to the scan wiring and the data wiring. That is, the scan wiring and the data wiring are respectively connected to the gate electrode and the first electrode of the switching thin film transistor, and the second electrode of the switching thin film transistor is electrically connected to the gate electrode 107 of the driving thin film transistor TR .

In the drawing, the driving thin film transistor TR has a polysilicon semiconductor layer 103 and a top gate type. However, the driving thin film transistor TR includes a semiconductor layer of amorphous silicon A bottom gate type having a gate electrode can also be applied.

When the driving thin film transistor TR is formed of a bottom gate type, the laminated structure is separated from the active layer of the gate electrode / the gate insulating film / the pure amorphous silicon and the semiconductor layer composed of the ohmic contact layer of the impurity amorphous silicon / The source electrode and the drain electrode. The above-described switching thin film transistor also has the same structure.

A planarization film 115 having a drain contact hole (not shown) exposing the drain electrode 113b of the driving thin film transistor TR is stacked on the driving thin film transistor TR and the switching thin film transistor. As the planarization film 115, an insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN x) which is an inorganic insulating material may be used, or an organic insulating material containing photo- Either one may be used.

An upper portion of the interlayer insulating film 115 is in contact with the drain electrode 113c of the driving TFT TR through a drain contact hole 121 are formed.

An insulating material, particularly, benzocyclobutene (BCB), polyimide, or photoelectrode is formed on the first electrode 121 to the boundary of each pixel PX and the non-display area N / A bank 123 made of a photo acryl is formed. The bank 123 is formed so as to overlap the rim of the first electrode 121 in the form of surrounding each pixel PX and has a lattice form having a plurality of openings as a whole in the display region A / A.

An organic light emitting layer 125 is formed on the first electrode 121 in each pixel PX surrounded by the bank 123. The organic light emitting layer 125 includes organic light emitting patterns (not shown) emitting red, green, and blue light. The organic light emitting layer 125 may be formed of a single layer made of an organic light emitting material or may include a hole injection layer, a hole transporting layer, a light emitting material layer emitting material layer, an electron transporting layer, and an electron injection layer.

A second electrode 127 is formed on the entire surface of the display area A / A on the organic light emitting layer 125 and the bank 123. At this time, the organic light emitting layer 125 interposed between the first electrode 121 and the second electrode 127 and the two electrodes 121 and 127 allows one organic light emitting diode to emit.

Therefore, when a voltage having a predetermined gray scale value is applied to the first electrode 121 and the second electrode 127, the organic light emitting diode is driven by the holes injected from the first electrode 121 and the holes injected from the second electrode 127 The provided electrons are transported to the organic light emitting layer 125 to form an exciton. When the excitons are transited from the excited state to the ground state, they emit light in the form of visible light. At this time, since the emitted light passes through the transparent second electrode 127 and exits to the outside, the flexible organic light emitting display device realizes an arbitrary image.

On the other hand, a first passivation film 129 made of silicon oxide (SiO ₂ ) or silicon nitride (SiN x), which is an inorganic insulating material, is formed on the display area A / A of the substrate including the second electrode 127 Respectively. The first passivation film 129 can not prevent moisture penetration into the organic light emitting layer 125 by only the second electrode 127 and therefore the first passivation film 129, By forming the film 129, moisture penetration into the organic light emitting layer 125 is minimized.

An organic film 131 made of a polymer organic material such as a polymer is formed in the display area A / A on the first passivation film 129. As the polymer thin film constituting the organic film 131, an olefin polymer (polyethylene, polypropylene), polyethylene terephthalate (PET), epoxy resin, fluoro resin, polysiloxane, Can be used.

An insulating material, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiNx), which is an inorganic insulating material, is formed on the entire surface of the substrate including the organic film 131 to prevent moisture from penetrating through the organic film 131. The second passivation film 133 is formed on the first passivation film 129 on the lower side of the organic film 131 as well as on the edge of the organic film 131, (N / A) can be effectively blocked due to the form of covering the portion of the non-display region (N / A).

A protective film 137 is placed on the entire surface of the substrate including the second passivation film 133 for encapsulation of the organic light emitting diode and is transparent between the substrate 101 and the protective film 137 A pressure sensitive adhesive 135 composed of any one of frit, organic insulating material and high molecular material having adhesive properties is interposed in complete contact with the substrate 101 and the barrier film 137 without an air layer. In the present invention, PSA (Press Sensitive Adhesive) is used as an example of the pressure sensitive adhesive (135).

A polarizing film 190 is attached to the upper portion of the protective film 137. This serves to prevent the quality of the image from deteriorating due to reflection of light incident from the outside to the organic light emitting display device.

Particularly, the flexible organic light emitting diode display according to the embodiment of the present invention is characterized in that the sealing material 170 is applied in a form surrounding the side surface of the polarizing film 190. In general, the polarizing film is difficult to infiltrate moisture on the front and rear sides, but the side has a characteristic of being easy to infiltrate with water as a cut surface when the film is produced. Accordingly, after the polarizing film 190 is attached to the surface of the organic light emitting diode display, the sealing member 170 is coated on the four sides of the sealing member 170 so as to be densely . Accordingly, the moisture permeation into the polarizing film 190 is minimized, so that deformation does not occur, and breakage of the organic light emitting display device due to deformation can be effectively prevented.

Hereinafter, a method of manufacturing a flexible organic light emitting display according to an embodiment of the present invention will be described with reference to FIGS. 5A to 5H.

5A to 5H are views showing a method of manufacturing a flexible organic light emitting display according to an embodiment of the present invention.

As shown in Fig. 5A, a substrate 101 having a flexible characteristic is prepared. Here, the substrate 101 is made of a plastic material having a flexible characteristic capable of maintaining the display performance even when the organic light emitting display device is bent.

Next, the substrate 101 of a silicon oxide inorganic insulating material on the (SiO ₂₎ or silicon nitride (SiNx) forming a buffer layer (not shown) made of, and the upper display area of the buffer layer (not shown) (A / A (Not shown) in each pixel PX region in the first region 103a and a central region of the first region 103a and the first region 103a forming the channel, The second region 103b, and the second region 103c doped with impurities. Wherein the thin film transistor includes at least one switching thin film transistor and a driving thin film transistor.

A gate insulating film 105 is formed on the buffer layer including the semiconductor layer 103 and a first metal material is deposited on the gate insulating film 105 in correspondence with the first region 103a of each semiconductor layer 103 The gate electrode 107 is formed.

At the same time, a gate wiring (not shown) is formed at the top of the gate insulating film 105. At this time, the gate electrode 107 and the gate wiring (not shown) are formed of a first metal material having a low resistance characteristic, for example, aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum ), Molybdenum (Mo), molybdenum (Mo), molybdenum (Mo), and molybdenum (MoTi), or a combination of two or more first metal materials. In the drawing, an example in which the gate electrode 107 and the gate wiring (not shown) have a single-layer structure is shown.

Next, as shown in FIG. 5B, an insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx), which is an inorganic insulating material, is formed over the gate electrode 107 and gate wiring (not shown) The interlayer insulating film 109 is formed.

The interlayer insulating film 109 and the underlying gate insulating film 105 are selectively patterned to expose each of the second regions 103b and 103c located on both sides of the first region 103a of each semiconductor layer (Not shown).

Next, as shown in FIG. 5C, a second metal material layer (not shown) is formed on the insulating film 109 including a contact hole (not shown). At this time, the second metal material layer may be formed of any one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum (MoTi), chromium (Cr), and titanium Or two or more substances.

Then, the second metal material layer is selectively patterned to form a data line (not shown) which crosses the gate line and define the pixel PX and a power supply voltage supply line (not shown) spaced apart from the data line by a predetermined distance. Although an embodiment of the present invention discloses an example in which a power supply voltage supply line (not shown) is formed by using a second metal material layer, a structure in which a first metal material layer is used in a previous gate line formation step It is possible. That is, the power supply voltage supply wiring may be formed on the gate insulating film 105, not the insulating film 109, but spaced apart from the gate wiring.

A source electrode 113a made of a second metal material, which is in contact with the second regions 103b and 103c exposed through the contact hole to the upper portion of the insulating film 109, And the drain electrode 113b are simultaneously formed. A gate electrode 107 and a source electrode 113a and a drain electrode 113b formed so as to be spaced apart from each other are provided between the semiconductor layer and the gate insulating film and the gate electrode 107 sequentially stacked with the gate electrode 107 as a center, Thereby forming a driving thin film transistor.

Although the data line and the source electrode 113a and the drain electrode 113b in the drawing all have a single layer structure as an example, they may have a double layer structure or a triple layer structure in which two different metal materials are combined It can be done.

In the drawing, the driving thin film transistor is constituted by a top gate type having a semiconductor layer 103 of polysilicon, for example. However, when the bottom gate type is applied, the laminated structure of the driving thin film transistor is separated from the active layer of the gate electrode / the gate insulating film / the pure amorphous silicon, and the semiconductor layer composed of the ohmic contact layer of the impurity amorphous silicon, And a drain electrode. Also, depending on the structure of the driving thin film transistor, the switching thin film transistor may be formed in the same lamination structure.

Next, a planarizing film 115 is formed on the driving thin film transistor. As the planarization layer 115, an insulating material, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiNx), which is an inorganic insulating material, may be used.

Then, the planarization film 115 is selectively patterned to form a contact hole exposing the drain electrode 113c of the driving thin film transistor.

After depositing a third metal material layer (not shown) on the planarizing film 115, the third metal material layer is selectively patterned to contact the drain electrode 113c of the driving thin film transistor through the contact hole And a first electrode 121 having a separated shape is formed for each pixel. At this time, the third metal material layer (not shown) may be formed of a metal such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum (MoTi), chromium (Cr) ), And the like can be used.

Next, although not shown in the drawing, the first electrode 121 may be provided with a plurality of pixels, for example, benzocyclobutene (BCB), polyimide, or polyimide on the boundary of each pixel PX and the non- Thereby forming an insulating material layer (not shown) made of photo acryl.

Next, as shown in FIG. 5D, a bank 123 is formed by selectively patterning an insulating material layer (not shown). Here, the bank 123 is formed so as to overlap the rim of the first electrode 121 in the form of surrounding each pixel PX, and is formed to have a lattice shape having a plurality of openings as a whole in the display region A / A do. The bank 123 of the outer side portion is formed to extend to the non-display area N / A which is the outer side of the panel and is formed so as to be wider than the lower side flattening film 115 to completely cover the flattening film 115, Is formed to have a gentle shape.

5E, an organic light emitting layer (not shown) composed of organic light emitting patterns (not shown) emitting red, green, and blue light is formed on the first electrode 121 in each pixel PX surrounded by the bank 123 125 are formed. Here, the organic light emitting layer 125 may be a single layer made of an organic light emitting material. Alternatively, a hole injection layer, a hole transporting layer, a light emitting layer, A light emitting layer, an emitting material layer, an electron transporting layer, and an electron injection layer.

Next, a second electrode 127 is formed over the entire surface of the substrate 101 including the organic light emitting layer 125 and the upper portion of the bank 123. At this time, since the flexible organic light emitting display of the present invention is of the top emission type, the second electrode 127 may be formed by selecting at least one of a transparent conductive material that transmits light, for example, a conductive material including ITO and IZO So that the light emitted from the organic light emitting layer 125 is emitted in the upward direction.

Thus, the organic light emitting layer 125 interposed between the first electrode 121 and the second electrode 127 and between the two electrodes 121 and 127 forms an organic light emitting diode.

5F, on the entire surface of the substrate 101 including the second electrode 127, a first passivation film made of silicon oxide (SiO ₂ ) or silicon nitride (SiN x), which is an inorganic insulating material, (129). The first passivation film 129 is formed on the second electrode 127 to prevent the moisture from penetrating into the organic light emitting layer 125 to the organic light emitting layer 125. In this case, It is possible to completely inhibit moisture penetration.

Next, a polymer organic material such as a polymer is applied to the display area A / A and the non-display area N / A on the first passivation film 129 through a coating method such as a screen printing method. The organic layer 131 is formed. As the polymer thin film constituting the organic film 131, an olefin polymer (polyethylene, polypropylene), polyethylene terephthalate (PET), epoxy resin, fluoro resin, polysiloxane, Can be used.

Next, as shown in FIG. 5G, an insulating material such as silicon oxide (SiO ₂ ) or an inorganic insulating material such as nitrided silicon nitride (SiO ₂ ) is used as a protective layer for blocking water from penetrating the entire surface of the substrate including the organic layer 131. A second passivation film 133 made of silicon (SiNx) is further formed.

Next, a protective film 137 is placed facing the entire surface of the substrate 101 including the second passivation film 133 for encapsulation of the organic light emitting diode, and frit, The substrate 101 and the protective film 137 are adhered to each other through the adhesive 135 made of any one of the material and the polymer material without lifting. The substrate 101 and the barrier film 137 are fixed by the adhesive 135 to form a panel state.

Next, as shown in FIG. 5H, the polarizing film 190 is attached to the top of the protective film 137 so that it completely covers the entire surface of the panel including the display area A / A. The polarizing film 190 is composed of at least one layer having a polarization property and serves to prevent the quality of an image from being degraded by reflection of light incident on the organic light emitting display device. A film can be used.

When the attachment of the polarizing film 190 is completed, the sealing member 170 is applied in such a manner as to frame each side of the polarizing film 190. The polarizing film 190 has a rectangular shape of four sides and an injection device SL for applying the sealant 170 is disposed on one side of the polarizing film 190 and is disposed along each side of the polarizing film 190 The sealing material 170 is applied in a surrounding form. When the application step is completed on all sides, the manufacturing process of the organic light emitting diode display according to the present invention is completed through the drying process of the sealing material 170.

Therefore, according to the organic light emitting diode display according to the embodiment of the present invention, the polarizing film attached on the surface of the protective film of the panelized organic light emitting display device so as to cover the display area A / A, Deformation of the polarizing film can be neglected by blocking the flow of moisture from the outside through the side face of the polarizing film by riming each side face. Accordingly, it is possible to minimize the moisture permeation failure due to breakage and breakage of the organic light emitting display device due to the deformation of the polarizing film.

While a great many are described in the foregoing description, it should be construed as an example of preferred embodiments rather than limiting the scope of the invention. Therefore, the invention should not be construed as limited to the embodiments described, but should be determined by equivalents to the appended claims and the claims.

A / A: display area N / A: non-display area
PX: pixel TR: thin film transistor
101: substrate 103: semiconductor layer
103a: first region 103b, 130c: second region
105: gate insulating film 107: gate electrode
109: interlayer insulating film 113a, 113b: source / drain electrode
115: planarization film 121: first electrode
125: organic light emitting layer 127: second electrode
129: first passivation film 131: organic film
131: organic film 133: second passivation film
135: Pressure sensitive adhesive 137: Protective film
170: sealing material 190: polarizing film

Claims (10)

A substrate having a plurality of pixels defined therein, at least one thin film transistor and an organic light emitting diode in the pixel, and having a protective film on the top thereof;
A polarizing film attached on the protective film; And
A sealant applied in such a manner as to frame each side of the polarizing film
And the organic light emitting display device. The method according to claim 1,
Wherein the substrate is divided into a display region in which the plurality of pixels are defined and a non-display region surrounding the display region,
A plurality of signal wirings and thin film transistors formed on the substrate;
A planarizing film formed on the substrate including the thin film transistor and exposing one electrode of the thin film transistor;
A first electrode formed on the planarization film and connected to the one electrode;
A bank extending to the non-display region on the substrate including the first electrode and formed so as to completely cover the interlayer insulating film;
An organic light emitting layer formed on the first electrode so as to be separated for each pixel region;
A second electrode formed on the entire surface of the display region above the organic light emitting layer;
A first passivation film formed on the entire surface of the substrate including the second electrode;
An organic film formed on the first passivation film; And
A second passivation film formed on the first passivation film containing the organic film and having the protective film attached thereto by an adhesive,
And an organic light emitting diode (OLED). The method according to claim 1,
The sealing member
Wherein the polarizing film is applied in such a manner as to surround all four sides starting from one side of the polarizing film. The method according to claim 1,
Wherein the polarizing film
And at least one circularly polarizing layer. The method according to claim 1,
Wherein:
Wherein the flexible organic light emitting display device is formed of a plastic material having a flexible characteristic. Forming at least one thin film transistor and an organic light emitting diode in the pixel on a substrate on which a plurality of pixels are defined, and attaching a protective film on the substrate;
Attaching a polarizing film on the protective film; And
A step of applying a sealing material in such a manner as to frame each side of the polarizing film
Wherein the organic light emitting display device comprises a plurality of organic light emitting display devices. The method according to claim 6,
The substrate is divided into a display region in which the plurality of pixels are defined and a non-display region surrounding the display region, and on the substrate on which a plurality of pixels are defined, one or more thin film transistors and an organic light emitting diode And attaching a protective film to the upper portion,
Forming a plurality of signal wirings and a thin film transistor on the substrate;
Forming a planarization film on the substrate including the thin film transistor to expose one electrode of the thin film transistor;
Forming a first electrode connected to the one electrode on the planarization film;
Forming a bank extending to the non-display region on the substrate including the first electrode so as to completely cover the interlayer insulating film;
Forming an organic emission layer on the first electrode so as to be separated for each pixel region;
Forming a second electrode on the entire surface of the display region above the organic light emitting layer;
Forming a first passivation film on the entire surface of the substrate including the second electrode;
Forming an organic film on the first passivation film; And
Forming a second passivation film formed on the first passivation film containing the organic film and having the protective film adhered thereon by an adhesive,
Wherein the organic light emitting display device comprises a plurality of organic light emitting display devices. The method according to claim 6,
Wherein the step of applying the sealing material comprises:
Wherein the polarizing film is applied in a state of covering all four sides starting from one side of the polarizing film. The method according to claim 6,
Wherein the polarizing film
Wherein at least one circularly polarizing layer is formed on the transparent substrate. The method according to claim 6,
Wherein:
Wherein the flexible organic light emitting display device is formed of a plastic material having a flexible characteristic.

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