KR20140054222A - Corner cut mask - Google Patents

Abstract

A mask structure configured to deposit a layer on a rectangular substrate, for example, an edge exclusion mask configured to deposit a layer on a rectangular substrate, is described. Wherein the mask structure comprises a mask frame configured to mask an edge of the substrate during layer deposition and wherein the mask frame includes at least two mask frame side portions that define a corner therebetween, Is overlapped with the edge of the rectangular substrate so that the first overlap width is larger than the second overlap width of the corner area.

Description

Corner cut mask {CORNER CUT MASK}

The present invention relates to layer deposition methods using masks and masks for layer deposition. Embodiments of the present invention relate in particular to methods for depositing layers using edge exclusion masks and edge exclusion masks, and more particularly to mask structures configured to deposit layers on a rectangular substrate, depositing layers on a rectangular substrate Devices for depositing layers on a rectangular substrate, and methods for depositing layers on a rectangular substrate.

Several methods of depositing material on a substrate are known. For example, the substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, Typically, such a process is carried out in a process apparatus or process chamber, in which the substrate to be coated is located. An evaporation material is provided in the apparatus. A plurality of materials, as well as oxides, nitrides, or carbides of the materials, may be used for deposition on the substrate.

Coated materials may be used in some applications and in some technical fields. For example, such applications include the field of microelectronics, such as creating semiconductor devices. In addition, substrates for displays are often coated by a PVD process. Additional applications include insulating panels, organic light emitting diode (OLED) panels, substrates with TFTs, or color filters, and the like.

In coating processes, it may be useful to use masks, for example, in order to better define the area to be coated. In some applications, only parts of the substrate need to be coated, and parts that are not to be coated are covered with a mask. In some applications, such as large substrate coating devices, it may be useful to exclude the edge of the substrate from coating. For example, in the case of eliminating an edge by an edge exclusion mask, it is possible to provide substrate edges without coating and to prevent coating of the backside of the substrate. For example, as one of many other applications, LCD TV layer deposition requires an uncoated substrate edge. The above-described mask generally covers this area of the substrate. However, masking or blocking with a mask can result in additional shadowing effects of arriving atoms, molecules and clusters, which can lead to unreliable layer thicknesses and to sheet resistance uniformity .

However, of the material deposition process, the mask, which may be an edge exclusion mask, is also exposed to the deposition material due to the position of the mask in front of the substrate. The effects of uncoated and coated masks may be complicated and may depend on the material to be deposited.

SUMMARY OF THE INVENTION In view of the foregoing, it is an object of the present invention to provide a mask, particularly an edge exclusion mask, a deposition apparatus having a mask, and a method for masking edges of a substrate, overcoming at least some of the problems of the prior art .

In view of the above, a mask structure according to independent claim 1, a device according to independent claim 11, and a method according to independent claim 13 are provided. Further aspects, advantages, and features of the present invention are apparent from the dependent claims, the description and the accompanying drawings.

According to one embodiment, a mask structure configured to deposit a layer on a rectangular substrate, for example, an edge exclusion mask configured to deposit a layer on a rectangular substrate, is provided. Wherein the mask structure comprises a mask frame configured to mask an edge of the substrate during layer deposition and wherein the mask frame includes at least two mask frame side portions that define a corner therebetween, Is overlapped with the edge of the rectangular substrate so that the first overlap width is larger than the second overlap width of the corner area.

According to another embodiment, an apparatus for depositing a layer on a rectangular substrate is provided. The apparatus includes an inner chamber configured for layer deposition and an edge exclusion mask for depositing a layer on the mask structure, e.g., a rectangular substrate, in the chamber, wherein the mask structure is configured to mask the edge of the substrate during layer deposition Wherein the mask frame comprises at least two mask frame side portions that form a corner between the corner regions, wherein the mask frame has a first overlap width at the side portions that is greater than a width of the second overlap portion The edge of the rectangular substrate is overlapped to be larger than the width. The apparatus further includes a deposition source for depositing the material forming the layer.

According to a further embodiment, a method of depositing a layer on a rectangular substrate is provided. The method includes the steps of masking a substrate edge with a mask, the masking width being smaller in comparison to the sides of the substrate at the corners of the substrate, and depositing material of the layer on substrate, particularly masked substrate areas .

In order that the above-recited features of the present invention may be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the invention and are described below:
BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 shows a mask structure commonly used for masking an edge of a substrate;
Figure 2 shows a cross-sectional side view of the mask structure, wherein the cross-section can correspond to a mask structure as shown in Figure 1A or a mask structure according to embodiments described herein;
Figure 3 illustrates a mask structure, such as an edge exclusion mask, illustrating the embodiments described herein;
Figure 4 illustrates an additional mask structure, such as an edge exclusion mask, illustrating the embodiments described herein;
Figure 5 shows a mask structure with a bar forming additional corners, such as an edge exclusion mask, and according to the embodiments described herein;
Figures 6A and 6B illustrate views of an apparatus for depositing a layer of material on a substrate using a mask structure according to embodiments described herein and for illustrating a scenario in which the substrate is not loaded;
Figure 7 shows a flow diagram illustrating a method for depositing material on a substrate in accordance with embodiments described herein, where an edge exclusion mask is used.

Reference will now be made in detail to several embodiments of the invention, one or more examples of which are illustrated in the drawings. In the following description of the drawings, like reference numerals refer to like elements. In general, only differences to the individual embodiments are described. Each example is provided as an illustration of the invention and does not imply a limitation of the invention. Furthermore, the features illustrated or described as part of one embodiment may be utilized in other embodiments or with other embodiments to also yield additional embodiments. The description is intended to include such variations and modifications.

According to some embodiments, the mask structure or "edge reject mask" should be understood as a mask covering at least the edge of the substrate to be coated. In general, a mask may consist of several parts or portions, which may form a frame, which forms one or more openings. The frame of the mask may again have several frame parts or frame parts. In accordance with some embodiments, the term "mask" is used for a piece of mask material, such as Invar, a carbon fiber material, or a metal such as aluminum, titanium, or stainless steel, The mask covers the part of the substrate to be coated. Typically, a mask is positioned between the substrate to be coated and a source of deposition material, such as a crucible, a target, or the like.

Typically, the edge exclusion mask can cover from about 1% to about 5% of the area of the substrate, typically about 5% to about 1%, more typically about 1% to 2% of the area of the substrate There will be. According to some embodiments, the area of the substrate that is covered, shaded, or masked by the edge exclusion mask is located around the periphery of the substrate.

An edge exclusion mask may be required if the edge of the substrate must be maintained without deposition material or substantially without deposition material. This may be the case where, due to subsequent application and / or handling of the coated substrate, only a defined region of the substrate must be coated. For example, the substrate to be used as a display part must have predefined dimensions. Typically, large substrates are coated using an edge exclusion mask to shade the edges of the substrate and / or to prevent backside coating of the substrate. This approach allows for reliable and consistent coatings on substrates.

In accordance with some embodiments, large substrates may typically have a size of from about 1.4 m ² to about 8 m ² , more typically from about 2 m ² to about 9 m ^2, or even up to 12 m ² . Typically, the rectangular substrates on which the mask structures, devices, and methods according to the embodiments described herein are provided are large substrates as described herein. For example, a large substrate may have a GEN 5 corresponding to 1.4 m ² substrates (1.1 mx 1.25 m), GEN 7.5 corresponding to about 4.29 m ² substrates (1.95 mx 2.2 m), about 5.7 m ² substrates (2.2 mx 2.5 m), or even a GEN 10 corresponding to about 8.7 m ² substrates (2.85 m x 3.05 m). Larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.

Fig. 1 shows an example of a rectangular substrate. The outermost boundary of the substrate was indicated as " 110 ". Typically, the boundary 110 may also be described as the outermost line of the substrate, and the material of the substrate past such outermost line is terminated.

As described herein and in accordance with some embodiments, the edge 120 of the substrate may include the periphery of the substrate. Typically, an edge 120 as used herein may be an area including the boundary 110 of the substrate. The edge 120 may have a width w that extends from the boundary 110 onto the surface of the substrate 100. The edge 120 is typically defined by an edge exclusion mask 40 on the substrate to be processed and the edge exclusion mask 40 is used during deposition of one or more layers on the substrate 100.

Generally, the mask reduces or prevents deposition of materials on such edge regions. However, masking or blocking with a mask can result in additional shadow effects of arriving atoms, molecules and clusters, which can lead to unreliable layer thicknesses and sheet resistance uniformity. In particular, the four corners of the substrate are influenced by additional shadow effects because the two shadow portions meet at these points.

According to the embodiments described herein, in order to compensate for these effects, one or more of the corners, typically four corners, are provided covering or overlapping the mask. The opening in the middle of the mask frame may have protrusions, i.e., as compared to the rest of the mask, the mask frame at the four corners may have recesses or cutouts. 3, and the distance between the width Wc of the overlapping portion of the mask 140 and the boundary of the substrate, that is, the edge 110 of the substrate and the mask forming the opening, And at the side portions 340 of the mask frame compared to the width Ws of the overlap portion of the mask 140, i.e., the distance between the edge 110 of the substrate and the boundary of the mask forming the opening.

Figure 2 shows a side view of a substrate 100, wherein the substrate is positioned in a carrier and the edge of the substrate is shaded by the mask structure 140. [ The cross-sectional view shown in FIG. 2 may correspond to the conventional mask structure 140 shown in FIG. 1, or may include a mask structure 140, according to embodiments described herein and illustrated in FIGS. 2 through 6B, It may correspond to an edge reject mask. Typically, the mask is provided with a gap 42 of 2 mm to 8 mm from the substrate, that is, the portion of the mask that shades the substrate surface does not contact the surface of the substrate. According to other embodiments, the mask may also be in direct contact with the substrate, e.g., no gaps are present or the gaps may be between 0 mm and 8 mm.

In accordance with the embodiments described herein, there may be an additional cover 250 that prevents portions of the carrier or other portions 252 of the masking structure from being coated with a material during deposition of the material on the substrate.

According to some embodiments, the edge 120 where there is overlap between the edge exclusion mask and the substrate may have a width that extends from the boundary 110 onto the surface of the substrate 100. Because of the deviation in the rectangular shape of the mask opening, the width of the overlap is varied for the embodiments described herein. Thereby, the deviation can be described as a projection of a recess or opening of the mask frame. As will be understood by those skilled in the art, the overlap is defined by overlapping regions of the mask frame region and the substrate region for projection in a plane parallel to the substrate surface.

According to some embodiments that may be combined with the other embodiments described herein, the first overlap, i.e. the first width Ws, may be between 2 mm and 8 mm, typically between 3 and 6 mm. As a further optional implementation of the first overlap, the second overlap, i.e. width Wc, may be between 0.0 mm and 4 mm, typically between 1 and 3 mm.

Typically, the width w can be symmetrical with respect to the entire substrate, i.e. each edge region and each side portion can have the same width, but also from side to side ) Will be different. According to some embodiments, the edge of the substrate may be defined by the opening of the mask used to coat the substrate. For example, the opening of the edge exclusion mask affects the area of the substrate to be coated and covers an area of the substrate, such as an edge. Thus, the edge of the substrate may be defined as an area of the substrate that is covered by the edge exclusion mask and not coated during the coating process in which the edge exclusion mask is used.

Typically, the edge of the substrate may be defined as an area of the substrate that must be kept substantially free of the deposition material or the layer thickness of the deposited material is reduced to a value of at least 25% will be.

Typically, the substrate may be made of any material suitable for material deposition. For example, the substrate may be coated by a glass (e.g., soda-lime glass, borosilicate glass, etc.), metal, polymer, ceramic, compound materials, carbon fiber materials or any other material or deposition process Or a combination of materials that can be < RTI ID = 0.0 > chemically < / RTI >

In accordance with some embodiments, the term "mask opening" will have to be understood as the window of the mask, and the deposition material will pass through the window of such mask during the deposition process. Typically, a "mask opening" may also be referred to as a coating window, because such mask opening defines an area of the substrate over which the coating material is deposited. The boundary or inner boundary of the opening is defined by the limitation of the coating window. For example, if the mask is freshly or freshly cleaned and is not yet used in the deposition process, the opening boundary is made of the mask material. If a mask is used in the deposition process and if the deposition material is deposited onto the mask, the boundary of the opening may be a limiting part of the coating window by the material deposited on the mask.

According to other embodiments, an edge exclusion mask may be used for a PVD deposition process, a CVD deposition process, or a combination thereof. Thereby, the edge of the mask affects the atoms, molecules, and clusters around it. The effects can be more complicated because the "stream of material" can be influenced by turbulence or the like, and the edge can not necessarily exist in relation to a sharp cut-off edge. In particular, more complex effects can be superimposed from neighboring sides in the corners. Thus, thickness uniformity at the corners of the coated area of the substrate can be improved by embodiments of the present invention and for applications using embodiments of the present invention.

The embodiment shown in FIG. 3 shows the rectangular recesses of the mask frame at four corner areas 342. FIG. This corresponds to the protrusions in the mask opening or coating window. These regions may have a length L and a width H, and the length and width may be, for example, 2 cm to 6 cm, typically 3 cm to 5 cm. In accordance with different embodiments, the length and width may be the same on either side, or the length and width may be different. For example, the length and width may have approximately the same proportion of the total side length of each mask. Typically, the dimensions of the recesses or protrusions may be the inner boundary of the mask, which is about 0.5% to 5% of each dimension of the mask, typically the length of the opening.

According to further embodiments, the corner areas may be formed to have a shape different from the rectangular shape. Thereby, it is possible for the corner areas to have a continuous reduction of the overlap width, i.e. a continuous reduction towards the corner formed by the mask frame part, from the width Ws to the width Wc. Fig. 4 shows corresponding embodiments, wherein protrusions are provided in comparison with the rectangular corner portions in the corner regions of the opening.

As can be seen in FIG. 4, these and similar shaped corner areas may result in an angle at the corners, and the angle is defined by the tangents at the locations where the side segments 340 intersect with each other, Deg. For example, the angles may be between 65 ° and 95 °, typically between 80 ° and 90 °. In particular, the length and width of the corner areas (length L and width H in Fig. 3), as described above, can be reduced to, for example, 10 cm or even 15 cm .

The embodiments described herein describe an edge exclusion mask with cut-outs at the corners. This can reduce the shadow effects of neighboring sides of the edge exclusion mask at the corners, which shadow effects can be added up and thus can even result in insufficient layer thickness in parts of the substrate , Is intended for layer deposition. Thereby, according to some embodiments that may be combined with other embodiments described herein, the overlap width Wc in the corner areas may be as small as 0.5 mm or even be 0 mm. Thereby, overlap widths Wc close to the corner areas of the near side are sufficient to create a shadow effect at the corners such that the area actually deposited on the substrate is substantially rectangular.

According to some of these embodiments, it is even possible to have a negative overlap, i.e., a gap, in the corner areas. Generally, it is preferred to have regions on the substrate, the regions being deposited in an uncoated or substantially uncoated edge of the substrate, and the deposited regions have a rectangular shape. Thereby, an edge exclusion mask is provided, and the edge exclusion mask is slightly deviated from the rectangular shape to compensate for higher order shadow effects at the corners.

Figure 5 shows mask structures or edge exclusion masks respectively additional embodiments. A bar 540 is provided between two opposing side portions 340 in the figure. According to further embodiments, more than one bar 540 may be provided. In addition, optional additional bars may be provided, which bar is perpendicular to the bar shown in Fig. Such vertical bars may be provided between the side portions and other bars, but such vertical barbs may also be regarded as side portions of the portions of the mask structures.

Such a son can separate the regions of the entire mask into different regions. Such regions may correspond, for example, to devices fabricated on a substrate. For example, the two regions 501 shown in FIG. 5 may correspond to two devices, such as large area flat panel displays. Typically, there may be one or more devices, such as displays, being fabricated on a substrate. Given the current glass size generation and the size of the display of the mobile telephone, there may be multiple displays on the substrate. The corresponding separation as shown in Fig. 5 may result in a plurality of bars separating the areas for each display. According to further embodiments, the bars may be implemented specifically for color filter fabrication applications and the edges of regions corresponding to one display size of the color filter will be implemented.

Alternatively, the bar can separate the zones, wherein different substrates are provided on one carrier. For example, the mask shown in Fig. 5 may be used for an arrangement in which two substrates are supported on one carrier. For example, one of the two substrates may be located in the left region 501 and the other of the two substrates may be located in the right region 501 of FIG. Similarly, mask structures with additional barbs may be used for arrangements of substrates with two or more substrates.

Thereby, edge exclusion may be provided for each substrate, as this is desirable for further processing of individual substrates. Thus, some method steps may be performed on a larger array of substrates comprising two or more substrates. Thereby, a mask structure with a corresponding number of bars 540 can be provided, so that the mask structure provides an edge exclusion for each of the substrates. Subsequently, for subsequent method steps, the substrate arrangement can be separated into individual substrates, where each substrate has a desired uncoated edge and additional processing steps are performed on a piece by piece ) Can be performed. This means that, while each of the processing steps (initial processing steps) is performed on a larger scale, while the other method steps (subsequent method steps) are not performed on the same size of the carriers, This is especially useful if it is more difficult to control on the site.

In accordance with different embodiments that may be combined with other embodiments described herein, a mask frame may be provided with side portions and one or more additional portions, such as barbs 540, And can also be regarded as the side portions of the (sub) mask structure. One or more bars from additional corner areas may be provided similar to the corner areas 342 described with reference to FIG. 3 and / or FIG. Thus, the additional corner areas may also be shaped such that each of the apertures has projections and / or the mask frames have recesses. Thereby, also overlapping regions are provided, and corresponding overlap widths with the substrates are reduced in the corner regions. In other words, the breadth of the barons is reduced in areas where corners are formed.

According to some embodiments that may be combined with the other embodiments described herein, the width of the bar in the central region may be between 10 cm and 20 cm, and the width of the overlap of the bar with the relevant portion of the substrate may be greater than the width of the central region Typically 2 mm to 8 mm, typically 3 mm to 6 mm, similar to the above described overlap in Fig. The second overlap in the corner areas may be between 0.0 mm and 4 mm, typically between 1 mm and 3 mm.

6A and 6B show schematic views of a deposition chamber 600 according to embodiments. The deposition chamber 600 is configured for a deposition process such as a PVD or CVD process. One or more substrates 100 are shown positioned on the substrate transport device 620. [ In accordance with some embodiments, the substrate support may be moved so that the position of the substrate 100 in the chamber 612 may be adjusted. In particular, in the case of large substrates as described herein, deposition can be performed with a vertical substrate orientation or an essentially vertical substrate orientation. Thereby, the conveying device may have lower rollers 622, and such lower rollers are driven by one or more drivers 625, e.g., motors. The driving portions 625 can be connected to the roller 622 by the shaft 623 for rotation of the roller. Thereby, one drive portion 625 can drive more than one roller, for example, by connecting the rollers to a belt, gear system, or the like.

Rollers 624 can be used to support the substrates in a vertical or essentially vertical position. Typically, the substrates can be vertical or slightly deviated from the vertical position, for example up to 5 degrees. Substrate size to 1 m ² to 9m ² of the large-sized board are typically very thin, for example less than 1 mm, for example 0.7 mm or even thinner by 0.5 mm. In order to support the substrate and to provide the substrates in a fixed position, the substrates are provided in the carrier during processing of the substrates. Thus, the substrates can be carried by a transport system including, for example, a plurality of rollers and drivers, while being supported within the carrier. For example, a carrier having substrates therein is supported by a system of rollers 622 and rollers 624.

A deposition material supply source 630 is provided in the chamber 612 facing the side of the substrate to be coated. The evaporation material supply source 630 provides the evaporation material 635 to be deposited on the substrate. As shown in FIG. 6A and according to the embodiments described herein, the source 630 can be a target having a deposition material thereon, or a material can be ejected for deposition on the substrate 100 It would be possible to arrange different arrays. Typically, the material source 630 may be a rotatable target. According to some embodiments, the material source 630 may be moved to place and / or replace the source 230. According to other embodiments, the material source may also be a planar target.

According to some embodiments, the deposition material, denoted by reference numeral 635 during layer deposition, may be selected depending on the deposition process and the subsequent application of the coated substrate. For example, the source material may be a material selected from the group consisting of metals such as aluminum, molybdenum, titanium, or copper, silicon, indium tin oxide, and other transparent conductive oxides. Typically, oxide-, nitride-, or carbide- layers, which may include such materials, are formed by providing the material from a source or by reactive deposition, i.e., when the material from the source is oxygen, Nitrogen, or carbon. ≪ / RTI > In accordance with some embodiments, thin film transistor materials such as silicon oxides, silicon oxynitrides, silicon nitrides, aluminum oxides, aluminum oxynitrides may be utilized as the deposition material.

Typically, the deposition chamber 600 includes a masking arrangement 640 that includes a mask structure 140. According to some embodiments, the mask 140 is an edge exclusion mask. The edge exclusion mask 140 ensures that the edges of the substrate 100 are not coated with the deposition material 635. Chain lines 665 illustratively illustrate the path of the deposition material 635 during operation of the chamber 600. By way of example, material 635 may be sputtered and also evaporated, and the dashed lines 665 roughly illustrate the path of the sputtered material vapor of the deposition material 635 relative to the substrate 100. 6A, the edge of the substrate 100 is maintained without the evaporation material, due to the edge exclusion mask 140, as can be seen by the dotted lines 665 in Fig. 6A.

In Figure 6b, a left edge exclusion mask is shown comprising separate frame portions 601, 602, 603, 604, 605, 606, 607, 608, 609 and 610 that are joined together to form a mask frame . Typically, the mask structure, particularly for large substrates, may be essentially L-shaped and may include at least four corner portions 601, 603, 606, and 608 that include a substantial portion of a corner region or at least a corner region Together with the side portions connected to the edge parts to form the mask frame. Typically, the frame portions 601-610 may be aligned in a tongue-and-groove arrangement. The tongue-and-groove arrangement provides certain positions of the frame portions relative to each other. Also, according to some embodiments described herein, tongue-and-groove arrangements of frame portions allow frame portions to move away from one another. Typically, the tongue-and-groove arrangement allows the frame portions to slide away from one another without causing a gap through which the deposition material can pass. For reasons of simplicity, only the left mask structure 140 is shown, with portions 601-610. Similarly, to form a mask frame, more than one or all of the mask structures in the processing system may have more than one portion.

In accordance with exemplary embodiments that may be combined with other embodiments described herein, one or more chambers 612 may be provided as vacuum chambers. Thereby, the chambers are configured to process and / or coat the substrates in a vacuum atmosphere. Typically, the pressure can be less than 10 mbar, for example from 1 x 10 ^-7 mbar to 1 x 10 ^-1 mbar. Thus, the deposition system may be connected to vacuum flanges 613 and may have a pressure in the processing chamber 612 that is low enough to allow the deposition system to operate for a particular application, for example, 1 x 10 < ^-7 > mbar (Not shown) that allows the pressure of the fluid to be achieved. The pressure during deposition (i. E., Deposition pressure), such as PVD processes, may be between 0.1 Pa and 1 Pa. For particular embodiments, for PVD applications where, for example, the processing gas comprises at least one of argon and oxygen or nitrogen, the argon partial pressure may be from 0.1 Pa to 1 Pa and oxygen, hydrogen and / The nitrogen partial pressure may be between 0.1 Pa and 1 Pa. Typically, the pressure ranges for CVD applications may be orders of magnitude larger, especially at high pressures in the ranges given above.

According to some embodiments, a method for depositing a layer of deposition material on a substrate is provided. Figure 7 shows a flow diagram of the described method. Typically, a substrate is provided in the chamber of the deposition apparatus. According to some embodiments, the substrate may be a large substrate as described above, and the deposition apparatus may be a deposition chamber as exemplarily shown in Figs. 6A and 6B.

In step 702, a masking arrangement 640 (e.g., see FIG. 6A) is moved toward the substrate within the chamber 612 and a portion of the substrate is covered by the mask. Typically, the mask covers the edge of the substrate. The masking has a corner cut edge exclusion mask as described herein, in accordance with the embodiments described herein. Typically, the mask provides an opening with a protrusion that allows the deposition material to pass through during the deposition process. An example of such a mask is described with reference to Figs. 2-5. After masking the substrate, a layer is deposited in step 704, so that the edges are held with or without substantially no deposited material. In accordance with some embodiments that may be combined with other embodiments described herein, a method for depositing materials, depositing devices and masks to cover the edges of the substrates are used for large substrates.

In accordance with some embodiments that may be combined with other embodiments described herein, a mask includes more than one frame portion to form a mask frame. Typically, a mask is configured for use in a deposition apparatus as described above.

According to different embodiments that may be combined with other embodiments described herein, the mask frame may be made of materials such as aluminum, Invar, titanium and stainless steel.

A plurality of embodiments are described from the above point of view. According to one embodiment, an edge exclusion mask configured for deposition of a mask structure, e.g. a layer on a rectangular substrate, configured for deposition of a layer on a rectangular substrate is provided. The mask structure comprising a mask frame configured to mask an edge of the substrate during layer deposition wherein the mask frame comprises at least two mask frame sides and the mask frame sides form a corner in a corner region therebetween, The mask frame is shaped to overlap the edges of the rectangular substrate such that the width of the first overlap in the side portions is greater than the width of the second overlap in the corner region. Typically, the mask frame can form at least one opening with a protrusion in the corner area, and more typically has protrusions in each area of the corner areas. According to further embodiments, which may be combined with the other embodiments described herein, the first overlap may be 2 mm to 8 mm, typically 3 mm to 6 mm; The second overlap may be 0.0 mm to 4 mm, typically 1 mm to 3 mm; The corner area may have a length and / or width of 0.5 cm to 10 cm, typically 2 to 6 cm; And / or the corner area may have a length and / or width that is 0.5% to 5% of the corresponding length and / or width of the substrate. According to additional, additional or alternative modifications of the embodiments, at least two of the mask frame sides may be four mask frame sides, and the mask may be, for example, At least one bar connecting the two mask frame sides of the side portions may be further included and additional corners in the additional corner areas may be formed and the width of the bar may be greater in the corner areas than in the bar side part small. Typically, the corners of the corner areas may have an angle of between 70 and 90 degrees. Additional overlaps of the embodiments described herein may be provided in a plane parallel to the surface of the rectangular substrate.

According to another embodiment, an apparatus for depositing a layer on a rectangular substrate is provided. The apparatus includes an inner chamber configured for layer deposition and an edge exclusion mask for depositing a layer on the mask structure, e.g., a rectangular substrate, in the chamber, wherein the mask structure is configured to mask the edge of the substrate during layer deposition Wherein the mask frame comprises at least two mask frame side portions that form a corner between the corner regions, wherein the mask frame has a first overlap width at the side portions that is greater than a width of the second overlap portion The edge of the rectangular substrate is overlapped to be larger than the width. The apparatus further includes a deposition source for depositing the material forming the layer. According to further embodiments, a transport system configured for transporting the carrier supporting the substrate may be provided in the apparatus.

According to a further embodiment, a method of depositing a layer on a rectangular substrate is provided. The method includes the steps of masking a substrate edge with a mask, the masking width being smaller in comparison to the sides of the substrate at the corners of the substrate, and depositing material of the layer on substrate, particularly masked substrate areas . According to alternative embodiments of the method, which may be used additionally or alternatively to each other, the mask may be a mask structure according to the embodiments described herein and / or the deposition may be performed by a PVD method, a CVD method , Or a combination thereof.

While the foregoing is directed to embodiments of the invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims (15)

A mask structure (140) configured for depositing a layer on a rectangular substrate (100) comprising:
A mask frame configured to mask an edge (120) of the substrate during layer deposition, the mask frame comprising at least two mask frame sides (340), the mask frame sides defining a corner area (342) therebetween, Forming a corner at the bottom; / RTI >
Wherein the mask frame is shaped to overlap the edge of the rectangular substrate such that a first overlap in the side portions is greater than a second overlap in the corner region. The method according to claim 1,
Wherein the mask frame has at least one opening with protrusions of the corner region 342, typically protrusions of each region of the corner regions. 3. The method according to claim 1 or 2,
The first overlap (Ws) is between 2 mm and 8 mm, typically between 3 mm and 6 mm. 4. The method according to any one of claims 1 to 3,
The second overhang (Wc) is between 0.0 mm and 4 mm, typically between 1 mm and 3 mm. 5. The method according to any one of claims 1 to 4,
The corner region 342 has a length L and / or width H of 0.5 cm to 10 cm, typically 2 to 6 cm. 6. The method according to any one of claims 1 to 5,
Wherein the corner region (342) has a length (L) and / or a width (H) that is 0.5% to 5% of the corresponding length and / or width of the substrate (100). 7. The method according to any one of claims 1 to 6,
Wherein the at least two mask frame side portions (340) are four mask frame side portions, the mask structure comprising:
And at least one bar (540) connecting two of the four mask frame sides,
Additional corners of the additional corner areas 342 are formed and the width of the bar is smaller in the corner areas compared to the bar side part. 8. The method according to any one of claims 1 to 7,
Wherein the corner of the corner region has an angle of 70 to 90 degrees. 9. The method according to any one of claims 1 to 8,
Wherein the overlapping portion is provided in a plane parallel to the surface of the rectangular substrate (100). 10. The method according to any one of claims 1 to 9,
The frame comprises four corner elements 601, 603, 606, 608 and at least four side elements 602, 604, 605, 607, 609, 610, typically at least six side elements, And is configured to be coupled together to form a mask frame. An apparatus (600) for depositing a layer on a rectangular substrate (100) comprising:
An inner chamber 612 made for layer deposition,
A mask structure (140) in the chamber, according to any one of claims 1 to 10; And
And a deposition source (630) for depositing a material forming the layer. 12. The method of claim 11,
Further comprising a transport system (620) configured for transporting a carrier that supports the substrate (100). A method of depositing a layer on a rectangular substrate (100) comprising:
Masking the substrate edge (120) with a mask, the masking width being smaller at the corners of the substrate compared to the sides of the substrate; And
Depositing a material of the layer on the substrate, particularly in substrate areas that are not masked by the mask. 14. The method of claim 13,
Wherein the mask is a mask structure according to any one of claims 1 to 9. The method according to claim 13 or 14,
Wherein the deposition step is provided by a PVD method, a CVD method, or a combination thereof.

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