KR20130112111A - Laser processing method - Google Patents
Laser processing method Download PDFInfo
- Publication number
- KR20130112111A KR20130112111A KR1020120034250A KR20120034250A KR20130112111A KR 20130112111 A KR20130112111 A KR 20130112111A KR 1020120034250 A KR1020120034250 A KR 1020120034250A KR 20120034250 A KR20120034250 A KR 20120034250A KR 20130112111 A KR20130112111 A KR 20130112111A
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- South Korea
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- modified regions
- laser
- laser light
- focusing
- depth
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
- B23K26/0673—Dividing the beam into multiple beams, e.g. multifocusing into independently operating sub-beams, e.g. beam multiplexing to provide laser beams for several stations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
A laser processing method is disclosed. The disclosed laser processing method includes focusing a plurality of laser beams inside a workpiece to form a plurality of focusing points having different depths from the surface of the workpiece, and moving the laser beams along a processing line. And simultaneously forming a plurality of modified regions parallel to each other within the object, wherein the depth of the focusing points is adjusted by at least one of the focusing lenses and the zoom beam expanders.
Description
The present invention relates to a laser processing method, and more particularly, to a laser processing method for processing a processing object by forming a modified region by focusing laser light inside the processing object.
Conventionally, when cutting a processing object such as a semiconductor wafer or a glass substrate using a laser, the surface of the processing object is irradiated with laser light having a wavelength absorbed by the processing object and cut by absorption of the laser light. The object to be processed is cut by advancing heat melting from the side toward the back surface. However, in this cutting method, the periphery of the area to be cut out of the surface of the object to be cut is also melted. Therefore, when a semiconductor element or the like is formed on the surface of the object to be processed, there is a possibility that the semiconductor element around the cut object is melted when the object is cut.
In recent years, in order to prevent the surface of a process object from being damaged, the method of processing a process object by focusing laser light inside a permeable process object to form a modified area | region is attracting attention. In such laser processing, laser light of ultra-short or ultra-short pulses such as picoseconds or femtoseconds having a high output may be used. Specifically, when a laser beam of high power is focused inside a processing object such as a semiconductor wafer or the like, a modified region due to multiphoton absorption is formed at the converging point. Then, when the crack extends from the modified region thus formed to the surface of the workpiece naturally or by external stress, the workpiece is cut by breaking and thus a dicing process is performed on the workpiece.
On the other hand, when the thickness of the object is thick, it is easy to cut the object only when a plurality of modified regions are formed in the thickness direction of the object. In order to form such a plurality of modified regions, a focus control method or a multi focus method using a birefringent material has been generally used.
1A and 1B illustrate a method of forming a plurality of modified regions inside a workpiece by using a focus adjustment method. First, referring to FIG. 1A, a
FIG. 2 is a view for explaining a method of forming a plurality of modified
An embodiment of the present invention provides a laser processing method for processing a processing object by forming a modified region inside the processing object.
In one aspect of the present invention,
Focusing a plurality of laser beams within the object to form a plurality of light collecting points having different depths from the surface of the object; And
And simultaneously forming a plurality of modified regions parallel to each other inside the object by moving the laser beams along a processing line, wherein the depths of the focusing points are at least one of focusing lenses and a zoom beam expander. A controlled laser processing method is provided.
The converging points may be located further forward with respect to the formation direction of the modified regions as the laser light is located deeper from the surface of the object to which the laser light is incident. The modified regions may be formed by absorption of multiple photons within the object.
The focusing lenses may be provided on an optical path of laser beams on the object to be processed. Here, the depth of the focusing points may be adjusted by changing at least one of the structure and the position of the focusing lenses.
The zoom beam expanders may be provided on an optical path of laser beams on the focusing lenses. Here, the depth of the focusing points can be adjusted by varying the distance between the lenses inside the zoom beam expanders. In this case, the distance between the focusing lenses and the workpiece may be maintained the same.
After forming the reformed regions, the method may further include separating the object to be processed along the processing line by expanding internal cracks generated from the reformed areas to the surface of the object.
The object to be processed may include a material that is transparent to the laser lights.
In another aspect of the present invention,
In the laser processing method of sequentially forming a plurality of modified regions having different depths inside the object to be processed by focusing the laser light inside the object to form a condensing point, and then moving a plurality of times along the expected processing line.
The modified regions are provided by a laser processing method formed by repeatedly moving the laser light in a zigzag form along the processing line.
Each of the modified regions may maintain a constant depth when the laser light moves in one direction. Here, the modified regions may be formed in order of decreasing depth from the surface of the object to which the laser light is incident.
Each of the modified regions may change in depth as the laser beam moves in one direction. Here, each of the modified regions may have a smaller depth from the surface of the object to which the laser light is incident as the laser light moves in one direction.
According to embodiments of the present invention, by using a focusing lens or a zoom beam expander, a plurality of modified regions may be simultaneously formed in the object by placing focus points having different depths inside the object. In addition, by focusing the laser light inside the object to be processed to form a focusing point, the plurality of modified regions having different depths may be sequentially formed in the object to be processed by moving in a zigzag form along a line to be processed. Therefore, a plurality of modified regions of different depths can be formed by only one laser scan.
1A and 1B illustrate a method of forming a plurality of modified regions inside a workpiece by using a focus adjustment method.
FIG. 2 is a view for explaining a method of forming a plurality of modified regions inside a workpiece by using a multi-focus method using a birefringent material.
3 is a view illustrating a laser processing method according to an exemplary embodiment of the present invention.
4 is a view illustrating a laser processing method according to an exemplary embodiment of the present invention.
5 is a view illustrating a laser processing method according to an exemplary embodiment of the present invention.
6 is a view for explaining a laser processing method according to an exemplary embodiment of the present invention.
7 is a view for explaining a laser processing method according to an exemplary embodiment of the present invention.
8 exemplarily illustrates dicing of a silicon wafer using a laser processing method according to the present invention.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, like reference numerals refer to like elements, and the size and thickness of each element may be exaggerated for clarity of explanation.
The laser processing method according to the exemplary embodiments described below processes the object by irradiating a plurality of laser beams inside the object to form a plurality of modified regions in the thickness direction of the object. The modified regions may be formed by absorbing multiple photons while the laser beams of high power are focused inside the object to be processed. Each of the laser beams may be, for example, an ultrashort or ultrashort pulsed laser beam having a pulse width of 1 ns (nano second) or less to form a modified region by multi-photon absorption. The peak power density can be, for example, approximately 1 × 10 8 W / cm 2 or more. However, it is not necessarily limited thereto. In the following embodiments, a case in which three modified regions are formed in the substrate along the thickness direction of the substrate using three laser beams will be described as an example. However, the present exemplary embodiment is not limited thereto, and two modified regions or four or more modified regions may be formed in the thickness direction of the workpiece.
3 is a view illustrating a laser processing method according to an exemplary embodiment of the present invention.
Referring to FIG. 3, the object to be processed 110 according to the present exemplary embodiment may include a material through which the laser lights 131, 132, and 133 may pass. For example, the object to be processed 110 may include a silicon wafer, a glass substrate, a sapphire substrate, or the like. However, the present invention is not limited thereto. A plurality of focusing lenses, for example, first, second, and third focusing
In the present exemplary embodiment, the condensing points P1, P2, and P3 are located deeper from the surface of the
Next, in the state where condensing points P1, P2, and P3 having different depths are formed inside the
As described above, a plurality of modified
4 is a view illustrating a laser processing method according to an exemplary embodiment of the present invention. Hereinafter, a description will be given focusing on differences from the above-described embodiment.
Referring to FIG. 4, a plurality of focusing lenses, for example, first, second, and third focusing
In the present exemplary embodiment, the converging points P1, P2, and P3 are located deeper from the surface of the
Next, in the state where condensing points P1, P2, and P3 having different depths are formed inside the
As described above, the plurality of modified
5 is a view illustrating a laser processing method according to an exemplary embodiment of the present invention. Hereinafter, a description will be given focusing on differences from the above-described embodiments.
Referring to FIG. 5, a plurality of focusing lenses, for example, first, second, and third focusing
In this embodiment, a plurality of Zoom Beam Expanding Telescopes, for example, first, second, and third
In the present embodiment, the converging points P1, P2, and P3 are located deeper from the surface of the
Next, in the state where condensing points P1, P2, and P3 having different depths are formed in the
As described above, the plurality of modified
Next, the laser processing method according to the exemplary embodiments described below forms a plurality of modified regions in the thickness direction of the object by irradiating and moving one laser light inside the object. On the other hand, it is also possible to form a plurality of modified regions using a plurality of laser lights. The object to be processed may include a material that is transparent to the laser beam as described above, and the modified regions may be formed by multiphoton absorption while the laser beams of high power are focused inside the object to be processed. Each of the laser beams may be, for example, an ultrashort or ultrashort pulsed laser beam having a pulse width of 1 ns (nano second) or less to form a modified region by multi-photon absorption. The peak power density can be, for example, approximately 1 × 10 8 W / cm 2 or more. However, it is not necessarily limited thereto.
6 is a view for explaining a laser processing method according to an exemplary embodiment of the present invention.
Referring to FIG. 6, the
Specifically, the
When the
7 is a view for explaining a laser processing method according to an exemplary embodiment of the present invention.
Referring to FIG. 7, the
Specifically, the
FIG. 8 exemplarily illustrates dicing a silicon wafer using a laser processing method according to exemplary embodiments of the present invention described above. Referring to FIG. 8, a plurality of cutting scheduled lines are formed on the silicon wafer in parallel with each of the processing direction 1 and the processing direction 2. Here, a plurality of devices may be stacked on the silicon wafer in the area bounded by the cutting lines. First, at least one modified region is formed in the silicon wafer along the thickness direction by moving at least one laser light along cutting lines to be formed parallel to the processing direction 1. Next, at least one modified region is formed in the silicon wafer along the thickness direction by moving the at least one laser light along cutting lines to be formed parallel to the processing direction 2. Then, when the crack is extended from the at least one modified region formed inside the silicon wafer to the silicon wafer surface naturally or by external stress, the silicon wafer is divided into a plurality of chips by breaking.
While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the scope of the invention as defined by the appended claims.
110,210 ... Object to be processed 131,231 ... First laser beam
132,232 ... 2nd laser light 133,233 ... 3rd laser light
141 ... first reformed
143 ... Third modified area 151,151 ', 251 ... First focusing lens
152,152 ', 252 ... Second Focusing Lens
153,153 ', 253 ... Third Focusing Lens
330,430 ... laser light P1 ... first condensing point
P2 ... 2nd condensing point
P3 ... Third Condensing Point
Claims (17)
And simultaneously forming a plurality of modified regions parallel to each other inside the object to be processed by moving the laser beams along a processing line.
And a depth of the focusing points is controlled by at least one of focusing lenses and zoom beam expanders.
And the converging points are located further forward with respect to the direction in which the modified regions are formed, the deeper a position is located from the surface of the object to which the laser light is incident.
And the modified regions are formed by absorption of multiple photons within the object.
And the focusing lenses are provided on an optical path of laser beams on the object to be processed.
And the depth of the focusing points is adjusted by changing at least one of the structure and position of the focusing lenses.
And the zoom beam expanders are provided on an optical path of laser beams on the focusing lenses.
And the depth of the focusing points is adjusted by varying the distance between the lenses inside the zoom beam expanders.
The distance between the focusing lens and the object is maintained the same laser processing method.
And forming the modified regions, and separating the object to be processed along the scheduled line by expanding internal cracks generated from the modified regions to the surface of the object.
The processing object is a laser processing method comprising a material that is transparent to the laser light.
The modified regions are formed by repeatedly moving the laser light in a zigzag form along the processing line.
Each of the modified regions maintain a constant depth when the laser light moves in one direction.
And the modified regions are formed in order of decreasing depth from the surface of the object to which the laser light is incident.
Each of the modified regions is changed in depth as the laser light moves in one direction.
And each of the modified regions is gradually decreased in depth from the surface of the object to which the laser light is incident as the laser light moves in one direction.
The processing object is a laser processing method comprising a material that is transparent to the laser light.
And the modified regions are formed by multiphoton absorption inside the object.
Priority Applications (1)
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KR1020120034250A KR20130112111A (en) | 2012-04-03 | 2012-04-03 | Laser processing method |
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KR1020120034250A KR20130112111A (en) | 2012-04-03 | 2012-04-03 | Laser processing method |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20230144414A (en) * | 2022-04-07 | 2023-10-16 | 주식회사 이오테크닉스 | Laser processing apparatus, and laser processing method |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20230144414A (en) * | 2022-04-07 | 2023-10-16 | 주식회사 이오테크닉스 | Laser processing apparatus, and laser processing method |
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