KR20130098361A - Antenna device and communication device - Google Patents

Abstract

The present invention makes it possible to realize both good communication characteristics and mechanical strength, and provides an antenna device having a structure that is advantageous for miniaturization of the coupling electrode. It consists of the dielectric substrate 11 in which the ground 12 was formed in one surface of the dielectric, and the wiring 15 formed in the surface opposite to the surface in which the ground 12 of the dielectric substrate 11 was formed. The coupling electrode 18 which is electromagnetically coupled with the electrode of another antenna device arranged at a position to be communicable, has a plurality of bent portions, and is composed of the wiring 15 of approximately half the length of the communication wavelength, and the wiring 15 The connecting terminal 19 which is an input / output terminal of a signal is formed in one edge part, and the other end part has the structure electrically connected with the ground 12. As shown in FIG.

Description

ANTENNA DEVICE AND COMMUNICATION DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an antenna device for performing information communication by electromagnetic field coupling between opposing pairs of electrodes by a predetermined communication wavelength, and a communication device equipped with the antenna device.

This application claims priority based on Japanese Patent Application No. 2010-206930, and Japanese Patent Application No. 2010-206931, filed September 15, 2010 in Japan, which applications are herein incorporated by reference. It is used for.

Background Art In recent years, systems for transmitting data such as music and images wirelessly between electronic devices such as a computer and a small portable terminal without a cable or media have been developed. Such a wireless transmission system is capable of high speed transmission of up to about 560 Mbps at a short distance of several centimeters. Among such high-speed transferable transmission systems, TransferJet (registered trademark) has advantages in that although the communication distance is short, the possibility of eavesdropping is low and the transfer speed is high.

In TransferJet (registered trademark), the signal quality depends on the performance of the high frequency coupler because it can be performed by electromagnetic field coupling of a corresponding high frequency coupler with a super short distance therebetween. For example, as shown in FIG. 21, the high frequency coupler of patent document 1 is formed in the printed circuit board 201 which provided the ground 202 in one surface, and the other surface of the printed circuit board 201. As shown in FIG. A stub 203 of one microstrip structure, a coupling electrode 208, and a metal wire 207 connecting the coupling electrode 208 and the stub 203 are provided. Moreover, in the high frequency coupler of patent document 1, the transmission / reception circuit 205 is also formed on the printed board 201. FIG. In addition, in Patent Document 1, as a modified example in which the transmission / reception circuit 205 is not formed on the printed board 201, the printed board 201 in which the ground 202 is formed on one surface shown in FIG. 22, and A stub 203 having a microstrip structure formed on the other side of the printed board 201, a joining electrode 208, and a metal wire 207 connecting the joining electrode 208 and the stub 203. The structure provided with is described.

Japanese Unexamined Patent Publication No. 2008-311816

However, as in FIG. 21, in the high frequency coupler described in Patent Document 1, in order to perform good communication, the area of the plate-shaped coupling electrode 208 has to be increased. This is because a constant length is required depending on the communication wavelength, and the bonding electrode 208 must be made large in order to increase the bonding strength. In addition, since the metal wire 207 needs to connect the coupling electrode 208 and the stub 203 at a predetermined position, a problem in the process also arises, such as positioning accuracy at the time of manufacture.

The present invention has been proposed in view of such a situation, and an object of the present invention is to provide an antenna device having a structure advantageous for miniaturization of a coupling electrode while enabling both good communication characteristics and mechanical strength to be realized. Moreover, an object of this invention is to provide the communication apparatus with this antenna apparatus.

As a means for solving the above-mentioned problems, the antenna device according to the present invention is formed on a dielectric substrate as an antenna device for performing information communication by electromagnetic field coupling between opposing pairs of electrodes by a predetermined communication wavelength. And a coupling electrode which is electromagnetically coupled with another electrode of the antenna device so as to be communicable, wherein the coupling electrode includes a first wiring having a length of approximately half the communication wavelength, and a conductor electrically connected to the first wiring. The center portion and the conductor of the first wiring are formed at positions opposite to the thickness direction of the derivative substrate, and the electromagnetic field coupling with the electrodes of another antenna device arranged on the extension line connecting the center portion of the first wiring and the conductor. It features.

Moreover, the communication apparatus which concerns on this invention is formed in the dielectric substrate in the communication apparatus which performs information communication by electromagnetic field coupling between opposing pairs of electrodes by a predetermined | prescribed communication wavelength, and is formed in the dielectric substrate, the electrode of another antenna apparatus, and the electromagnetic field A coupling electrode which is coupled and communicable, and a transmission / reception processing unit electrically connected to the coupling electrode and configured to transmit and receive a signal, wherein the coupling electrode includes: first wiring formed of approximately half the length of the communication wavelength; It consists of a conductor electrically connected to one wiring, The center part of a 1st wiring, and the conductor are formed in the position facing the thickness direction of a derivative board | substrate, and are arrange | positioned on the extension line which connects the center part of a 1st wiring and a conductor. Electromagnetic field coupling with the electrode of the other antenna device.

The present invention has a good mechanical strength and an antenna device because a coupling electrode composed of a first wiring having a length of approximately half the communication wavelength and a conductor electrically connected to the first wiring is formed on the dielectric substrate. The whole size can be realized. In addition, the present invention is electromagnetically coupled with the electrode of another antenna device arranged on an extension line connecting the center portion of the first wiring and the conductor, so that the signal level is high in the center portion of the first wiring, so that the thickness of the substrate can be efficiently In terms of emitting the longitudinal wave of the electric field in the direction, the bonding strength between the other coupling electrodes arranged at the opposite positions is increased, and good communication characteristics can be realized.

As described above, the present invention makes it possible to realize both good communication characteristics and mechanical strength, and to miniaturize the entire apparatus.

1 is a diagram showing the configuration of a communication system equipped with an antenna device to which the present invention is applied.
It is a figure which shows the structure of the high frequency coupler which concerns on 1st Embodiment which is an antenna apparatus to which this invention was applied.
3 is a perspective view illustrating a communication state between high frequency couplers in the high frequency coupler according to the first embodiment.
FIG. 4 is an electric field distribution diagram showing a result of electric field analysis in a center cross section in the high frequency coupler according to the first embodiment. FIG.
FIG. 5 is an electric field distribution diagram showing a result of electric field analysis at 1 mm on an electrode surface of the high frequency coupler according to the first embodiment. FIG.
Fig. 6 is a frequency characteristic diagram showing an analysis result of the bond strength between the high frequency coupler and the reference coupler according to the first embodiment.
7 is a view showing the configuration of a high frequency coupler according to a modification which is an antenna device to which the present invention is applied.
8 is a frequency characteristic diagram showing an analysis result of the bond strength between the high frequency coupler and the reference coupler according to the modification.
It is a figure which shows the structure of the high frequency coupler which concerns on 2nd Embodiment which is an antenna apparatus to which this invention was applied.
10 is a perspective view illustrating a communication state between high frequency couplers in the high frequency coupler according to the second embodiment.
FIG. 11 is an electric field distribution chart showing the results of the electric field analysis in the center cross section of the high frequency coupler according to the second embodiment. FIG.
FIG. 12 is an electric field distribution diagram showing a result of electric field analysis at 1 mm on an electrode surface of the high frequency coupler according to the second embodiment. FIG.
It is a frequency characteristic diagram which shows the analysis result of the bond strength between the high frequency coupler and the reference coupler which concerns on 2nd Embodiment.
It is a figure which shows the structure of the high frequency coupler which concerns on 3rd Embodiment which is an antenna apparatus to which this invention was applied.
It is a figure which shows the structure of the high frequency coupler which concerns on 3rd Embodiment which is an antenna apparatus to which this invention was applied.
16 is a perspective view illustrating a communication state between high frequency couplers in the high frequency coupler according to the third embodiment.
It is a perspective view which shows the analysis cross section of the electric field vector in the high frequency coupler which concerns on 3rd Embodiment.
FIG. 18 is an electric field distribution diagram showing a result of electric field analysis in the center cross section of the high frequency coupler according to the third embodiment. FIG.
Fig. 19 is an electric field distribution chart showing the electric field analysis results at 1 mm on the electrode surface of the high frequency coupler according to the third embodiment.
20 is a frequency characteristic diagram showing an analysis result of the bond strength between the high frequency coupler and the reference coupler according to the third embodiment.
It is a figure which shows the structure of the high frequency coupler which concerns on a prior art example.
It is a figure which shows the structure of the high frequency coupler which concerns on a prior art example.

EMBODIMENT OF THE INVENTION Hereinafter, the form for implementing this invention is demonstrated in detail, referring drawings. In addition, this invention is not limited only to the following embodiment, Of course, it can change in various ways within the range which does not deviate from the summary of this invention.

<Communication system>

An antenna device to which the present invention is applied is a device for performing information communication by electromagnetic field coupling between a pair of opposing electrodes, for example, a communication system (100) capable of high-speed transmission of about 560 Mbps, as shown in FIG. ) To be used.

The communication system 100 is comprised with the communication apparatuses 101 and 105 which perform two data communication. Here, the communication apparatus 101 is provided with the high frequency coupler 102 which has the coupling electrode 103, and the transmission-reception circuit part 104. As shown in FIG. In addition, the communication device 105 includes a high frequency coupler 106 having a coupling electrode 107, and a transmission / reception circuit unit 108.

As shown in FIG. 1, when the high frequency couplers 102 and 106 of each of the communication devices 101 and 105 are disposed to face each other, the two coupling electrodes 103 and 107 operate as one capacitor. By operating like a band pass filter as a whole, it is possible to efficiently transmit high frequency signals in the 4-5 kHz band for realizing high-speed transmission of, for example, about 560 Mbps between two high frequency couplers 102 and 106.

Here, the coupling electrodes 103 and 107 for transmission and reception which the high frequency couplers 102 and 106 respectively have, for example, are spaced apart from each other by about 3 cm, and electric field coupling is possible.

In the communication system 100, for example, the transmission / reception circuit section 104 connected to the high frequency coupler 102 generates a high frequency transmission signal based on transmission data when a transmission request is generated from a higher level application, and the coupling electrode. The signal propagates from 103 to the coupling electrode 107. Then, the transmission / reception circuit section 108 connected to the high frequency coupler 106 on the receiving side demodulates and decodes the received high frequency signal, and passes the reproduced data to the host application.

In addition, the antenna device to which the present invention is applied is not limited to the transmission of the high frequency signals in the 4 to 5 GHz band described above, but can also be applied to the transmission of the signals in other frequency bands. The high frequency signal of the band will be described as a transmission target.

&Lt; First Embodiment >

As an antenna device mounted to such a communication system 100, the high frequency coupler 1 which concerns on 1st Embodiment shown in FIG. 2 is demonstrated.

In FIG. 2, in order to make the connection state of the wiring 15 easy to understand, the dielectric substrate 11 is transmitted through.

As shown in FIG. 2, the high frequency coupler 1 faces the wiring 15 functioning as the coupling electrode 18 on one surface 11a of the dielectric substrate 11 and the other facing the surface 11a. It has a structure in which the ground 12 was formed in the surface 11b.

Moreover, the coupling electrode 18 becomes the connection terminal part 19 which the one end of the wiring 15 becomes a connection part with the transmission-reception circuit part 104 mentioned above, and the other end of the wiring 15 is a through hole for a connection. It is connected to the ground 12 via 14. The coupling electrode 18 is formed of a wiring 15 having a shape having a plurality of bent portions, a so-called serpentine shape or a meander shape, and the wiring length of the wiring 15 is approximately half the length of the communication wavelength. It is adjusted.

In the coupling electrode 18 having such a configuration, as apparent from the following evaluation, the signal level is increased at a position ¼ of the communication wavelength from the connection terminal portion 19, that is, at the central portion 15a of the wiring 15. It becomes a high state, and the electric charge of this part and the mirror image electric charge of the opposite side via the ground 12 function as an electric dipole. Therefore, in the coupling electrode 18, the longitudinal wave of an electric field can be efficiently emitted in the thickness direction of a board | substrate, As a result, the coupling strength with other coupling electrodes arrange | positioned at the opposing position becomes strong, and favorable communication characteristic Can be realized.

The high frequency coupler 1 which consists of such a structure is manufactured by the following manufacturing processes. First, in the double-sided copper foil board | substrate which affixed copper foil, for example as a electrically conductive member on both surfaces of the dielectric substrate 11, one surface 11b is used as the ground 12, and the other surface ( A part of copper foil of 11a) is removed by an etching process, and the coupling electrode 18 comprised from the meander shaped wiring 15 is formed.

Subsequently, a hole is formed in one end of the wiring 15 by drilling or laser processing, and the through hole 14 for connection is completed by filling the hole with a conductive material such as plating or conductive paste. By this step, the wiring 15 constituting the coupling electrode 18 formed on the surface 11a of the dielectric substrate 11 and the ground 12 of the other surface 11b of the dielectric substrate 11 are formed. Electrically connected. The other end of the wiring 15 constituting the coupling electrode 18, which is not connected to the ground 12, becomes the connection terminal portion 19, and the connecting means with the transmission / reception circuit portion 104 described above. The high frequency coupler 1 is completed by processing into a shape suitable for the processing.

By the said manufacturing process, the high frequency coupler 1 can be manufactured by processing a single double-sided copper foil board | substrate, and since the whole surface of one surface 11b becomes the ground 12, wiring 15 When connecting to the ground 12, it is possible to easily connect by contacting one end of the wiring 15 to form the through hole 14 in contact with one end of the wiring 15 without having to match the pattern position on both sides, it can be produced by a simple process.

Thus, the high frequency coupler 1 consists of the wiring 15 in which the coupling electrode 18 was formed in the meander shape on the surface 11a which opposes the surface 11b in which the ground 12 was formed, Since the one end part of the wiring 15 is connected to the transmission / reception circuit part 104 via the connection terminal part 19 which is an input / output end of a signal, and the other end part is electrically connected with the ground 12, favorable mechanical strength The miniaturization of the entire high frequency coupler can be realized.

Thus, the strong mechanical strength is, for example, on the dielectric substrate 11 without using the metal wire 207 which may be deformed by an external force as compared with the high frequency coupler according to the conventional example shown in FIG. 21. This is because the coupling electrode 18 is mounted. Further, miniaturization of the entire high frequency coupler can be achieved because the bonding strength can be increased by adjusting the length of the wiring 15 without necessarily increasing the area of the electrode.

Moreover, in the high frequency coupler 1, as a material of the dielectric substrate 11, glass epoxy, a glass composite substrate which fixed glass, a paper base material, or a woven fabric of glass fiber with epoxy resin, a phenol resin, etc., Low dielectric constant polyimide, liquid crystal polymer, polytetrafluoroethylene, polystyrene, polyethylene, polypropylene, and the like, and further porous materials may be used. In particular, the dielectric substrate 11 preferably uses a material having a low dielectric constant in terms of electrical characteristics.

Moreover, in the manufacturing process mentioned above, in the high frequency coupler 1, although the wiring 15 was formed as the bonding electrode 18 by the etching process using the double-sided board | substrate which affixed copper foil, the dielectric substrate 11 ) May be formed on the surfaces 11a and 11b of the substrate) by a plating, vacuum deposition method, or the like, in a masked state or by patterning such as etching after formation.

As the material of the wiring 15 of the coupling electrode 18 and the ground 12, a good conductor such as aluminum, gold, silver, etc. can be used in addition to copper, but is not particularly limited to these materials and has a high electrical conductivity. If it is a sieve, all can be used.

Moreover, since the coupling electrode 18 forms the wiring 15 in a meander shape, the space of the surface 11a of the dielectric substrate 11 can be utilized effectively, and the high frequency coupler 1 itself is downsized. Can be planned.

As described above, although the length of the coupling electrode 18 is approximately 1/2 wavelength of the communication frequency, the formation space of the coupling electrode 18 can be reduced by narrowly forming these wirings. This is because the high frequency coupler can be miniaturized.

In addition, as described above, the wiring pattern of the wiring 15 constituting the coupling electrode 18 has a plurality of meander-shaped patterns having different shapes from the viewpoint of effectively utilizing the space of the dielectric substrate 11. You may connect, and you may use L-shaped, circular arc-shaped repeating patterns, etc.

Next, in order to investigate the performance of the high frequency coupler 1, the bond strength was analyzed using the 3D electromagnetic field simulator HFSS manufactured by Ansoft. Here, as an analysis model of the high frequency coupler 1, the thing of the following conditions was used. Polytetrafluoroethylene was used for the material of the dielectric substrate 11, and copper was set for the material of the conductor of the bonding electrode 18. Moreover, as for the magnitude | size of the high frequency coupler 1, the surface 11a in which the wiring pattern is formed was 6.5 mm x 6.5 mm, and the board | substrate thickness was 1.67 mm.

The coupling strength is evaluated by the transmission characteristic S21 of the S parameter used for evaluating the high frequency transmission characteristics, and the connection port 19 and the ground 12 serving as the signal input / output terminals of the high frequency coupler 1 are used as input ports. , The bond strength S21 between the ports of a pair of high frequency couplers was calculated. 3 shows the relative arrangement between the high frequency couplers used in the analysis of the bond strength S21. Here, the wiring 15 constituting the coupling electrode 18 of the high frequency coupler 1 and the center axis of the electrode 150a of the high frequency coupler 150 are opposed to each other so as to be spaced apart from each other by 15 mm and 100 mm. The frequency characteristics of the bond strength S21 were investigated at. In addition, in this example, the reference high frequency coupler which has plate-shaped electrode 150a is used for one high frequency coupler 150 which is a reference | standard of evaluation.

Moreover, in order to evaluate the generation | occurrence | production state of the electric field in the high frequency coupler 1, the electric field vector distribution of the high frequency coupler 1 vicinity was also investigated.

FIG. 4 analyzes the electric field distribution at 4.5 kHz of the high frequency coupler 1, and shows the electric field distribution in the cross section obtained by dividing the dotted line Y-Y 'in FIG. 2 in the thickness direction. As is apparent from FIG. 4, a strong electric field distribution is shown between the coupling electrode 18 and the ground 12, and an arc is directed outward from the central portion 15a of the wiring 15 constituting the coupling electrode 18. The electric field is distributed in the phase.

FIG. 5 shows the electric field distribution on the plane 1 mm apart in the vertical upward direction from the plane 11 a on which the coupling electrode 18 in the high frequency coupler 1 is formed. As is apparent from FIG. 5, an electric field is distributed in a substantially concentric manner from the central portion 15a of the wiring 15 constituting the coupling electrode 18.

This is because the length of the wiring 15 constituting the coupling electrode 18 is approximately half of the communication wavelength, and one end of the wiring 15 is connected to the ground 12, so-called short stub. This is because the electric field is maximized in the central portion 15a corresponding to a quarter of the communication wavelength. As described above, in the high frequency coupler 1, it was confirmed by analysis that a strong electric field was generated centering on the central portion 15a of the coupling electrode 18.

FIG. 6 shows an analysis result of the bonding strength S21 between the high frequency coupler 1 and the reference high frequency coupler 150, and has a bonding strength of -22.5 kPa at 4.5 kPa at a communication distance of 15 mm of opposing distance. In the -3 kHz bandwidth, which is a frequency band showing the intensity attenuated by 3 kHz from the maximum intensity, a broadband characteristic of 0.69 kHz was obtained. For example, in TransferJet (registered trademark), a bandwidth of 560 MHz is required, and in general, the center frequency is shifted depending on the deviation of the high frequency coupler and the degree of impedance matching with the circuit board, but is required in the high frequency coupler (1). Since the bandwidth is sufficiently wider than the bandwidth, good communication can be performed without being influenced by these variations. Moreover, at the non-communication distance of 100 mm of opposing distances, the communication cutoff of -48 Hz or less is acquired.

As described above, in the high frequency coupler 1 according to the first embodiment, as is clear from the above simulation, it is possible to realize good communication characteristics and to realize compatibility with mechanical strength, and to miniaturize the whole apparatus. can do.

<Modification Example of First Embodiment>

Next, the high frequency coupler 2 which concerns on the modification shown in FIG. 7 as an antenna apparatus attached to the communication system 100 is demonstrated.

In FIG. 7, the dielectric substrate 21 is transmitted through the wiring 25 in order to easily understand the connection state of the wiring 25.

As shown in FIG. 7, the high frequency coupler 2 is connected to one surface 21a of the dielectric substrate 21 with the wiring 25 functioning as the coupling electrode 28 and the wiring 25. The stub 27 is formed, and it has a structure in which the ground 22 was formed in the other surface 21b which opposes the surface 21a.

In addition, the coupling electrode 28 has one end of the wiring 25 as a connection terminal portion 29 serving as a connection portion with the transmission / reception circuit portion 104, and the other end of the wiring 25 is a through hole 24a for connection. It is connected to the ground 22 through). The coupling electrode 28 is formed of a wiring 25 having a shape, a serpentine shape, or a meander shape having a plurality of bent portions, and the wiring length of the wiring 25 is adjusted to approximately half the length of the communication wavelength. It is.

In the coupling electrode 28 having such a configuration, as is clear from the following evaluation, the signal level is increased at a position ¼ of the communication wavelength from the connection terminal portion 29, that is, at the center portion 25a of the wiring 25. In a high state, the charge of this portion and the mirror charge on the opposite side via the ground 22 function as an electric dipole. Therefore, in the coupling electrode 28, the longitudinal wave of an electric field can be efficiently emitted in the thickness direction of a board | substrate, As a result, the coupling strength with other coupling electrodes arrange | positioned at the opposing position becomes strong, and favorable communication characteristic Can be realized.

One end of the stub 27 is connected to the coupling electrode 28 at the connection terminal portion 29, and the other end thereof is connected to the ground 22 via the connection through hole 24b. Moreover, by using the stub 27 which adjusted the length, when the coupling electrode 28 electromagnetically couples with the other electrode, the coupling strength and bandwidth can satisfy | fill desired conditions.

The high frequency coupler 2 which consists of such a structure is manufactured by the following manufacturing processes. First, in the double-sided copper foil board | substrate which affixed copper foil, for example on both surfaces of the dielectric substrate 21, one surface 21b is used as the ground 22, and the other surface 21a is used. A part of copper foil of ()) is removed by an etching process, and the coupling electrode 28 and the stub 27 which consist of the meander shape wiring 25 are formed, respectively.

Subsequently, holes are formed in one end of the wiring 25 and one end of the stub 27 by drilling or laser processing, and each hole is filled with a conductive material such as a plating process or a conductive paste, thereby through The holes 24a and 24b are completed. By this step, the wiring 25 constituting the coupling electrode 28 formed on the surface 21a of the dielectric substrate 21 and the ground 22 of the other surface 21b of the dielectric substrate 21 are formed. Electrically connected. Similarly, the stub 27 and the ground 22 are electrically connected. In addition, the other end of the wiring 25 constituting the coupling electrode 28, which is not connected to the ground 22, becomes the connection terminal portion 29 connected to the stub 27, The high frequency coupler is completed by processing into a shape suitable for the connection means with the transmission / reception circuit section 104.

In addition, as shown in FIG. 7, when two connection through-holes 24a and 24b have a pattern shape adjacent to each other, the wiring 25 or the stub 27 constituting the coupling electrode 28 is formed. The end position can be adjusted, and it can also be connected to the ground 22, also using one connection through hole.

In this way, the high frequency coupler 2 can be produced by the coupling electrode 28 by treating one sheet of double-sided copper foil substrate, and the entire surface of one surface 21b is the ground 22. When the wiring 25 and the ground 22 are connected, one end of the wiring constituting the coupling electrode 28 and one end of the stub 27 are contacted with each other without the need to match the position of the double-sided pattern, respectively. By forming 24a, 24b, it can connect easily and can manufacture by a simple process.

Next, in order to investigate the performance of the high frequency coupler 2, the bond strength was analyzed using the 3D electromagnetic field simulator HFSS manufactured by Ansoft. Here, the thing of the following conditions was used as an analysis model of the high frequency coupler 2. As shown in FIG. Polytetrafluoroethylene was used for the material of the dielectric substrate 21, and copper was set for the material of the conductor used as the bonding electrode 28 and the stub 27. In addition, the size of the high frequency coupler 2 was 6.5 mm x 6.5 mm, the board | substrate thickness was 1.67 mm, and the length of the stub 27 was 5.2 mm as the surface 21a in which a wiring pattern is formed.

The coupling strength is evaluated by the transmission characteristic S21 of the S parameter used for evaluating the high frequency transmission characteristic, and the connection port between the connection terminal 29 and the ground 22 serving as the signal input / output terminal of the high frequency coupler 2 is used as an input port. The bond strength S21 between the ports of a pair of high frequency couplers was calculated. The relative arrangement between the high frequency couplers used for analysis is the same as the condition shown in FIG.

8 shows the analysis results of the frequency characteristics of the bonding strength S21 when the opposing distance between the high frequency couplers is 15 mm. For comparison, the bond strength when the opposing distance 15 mm shown in FIG. 6 which is the characteristic of the high frequency coupler 1 without the stub 27 was also shown.

Moreover, also in this example, the reference high frequency coupler 150 which is a reference | standard of evaluation is used for one high frequency coupler.

As apparent from Fig. 8, in the high frequency coupler 2 having the stub 27, the coupling strength can be increased, but the frequency band at which the strong coupling strength is obtained is narrow. In general, since the strength of the bond strength and the -3 kHz bandwidth are in a trade-off relationship, when these balances are insufficient for the required specifications, the stub 27 is formed like the high frequency coupler 2, and mainly The balance of both can be adjusted by changing the length.

&Lt; Second Embodiment >

Next, the high frequency coupler 3 which concerns on 2nd Embodiment shown in FIG. 9 as an antenna apparatus attached to the communication system 100 is demonstrated.

In FIG. 9, the dielectric substrate 31 is made to permeate | transmit so that the connection state of the wirings 32a and 32b can be easily understood.

As shown in FIG. 9, the high frequency coupler 3 has a plurality of bent portions on the upper and lower surfaces 31a and 31b of the dielectric substrate 31, respectively, a so-called serpentine shape or meander shape wiring 32a. , 32b) is formed. One end of these meander shaped wirings 32a and 32b is electrically connected via a connecting through hole 34a formed in the thickness direction of the dielectric substrate 31, and the electrode of another antenna device arranged at an opposite position. And electromagnetic field are combined to function as a coupling electrode 38 which can be communicated.

In addition, the coupling electrode 38 is formed of an end portion 39a of the wiring 32a not connected to the connecting through hole 34a and a wiring 32b not connected to the connecting through hole 34a. The connection terminal part 39 which consists of the edge part 39b which the other end extended to the surface 31b through the connection through hole 34b is formed on the same surface 31b.

The connection terminal part 39 is a terminal for connection with the above-mentioned transmission / reception circuit part 104, for example, connection by a flexible printed circuit board via an anisotropic conductive film, or by a thin wire coaxial cable via a surface mount receptacle. It becomes connection means, such as a connection. For this reason, the connection terminal part 39 adjusts the shape, and abbreviate | omits the through-hole 34b for connection according to a connection method, divides into the both sides of the dielectric substrate 31, respectively, and ends edges 39a and 39b, respectively. You may employ | adopt the arranged structure.

The bonding electrode 38 is formed by connecting meander-shaped wirings 32a and 32b formed on both surfaces of the dielectric substrate 31, and the wiring length connecting the wirings 32a and 32b, that is, for coupling. The length of the electrode 38 is adjusted to be approximately one wavelength of the communication frequency. In addition, the coupling electrode 38 is positioned at a quarter of the communication wavelength from the end portions 39a and 39b of the wirings 32a and 32b that are not connected to the connecting through hole 34a. ) And are facing each other.

As a specific example, in the coupling electrode 38, the positions of 1/4 of the communication wavelength from the ends 39a and 39b of the wirings 32a and 32b that are not connected to the connecting through holes 34a are respectively faced. The central portions 35a and 35b of the 31a and 31b are formed.

In this way, in the coupling electrode 38, as apparent from the following evaluation, one of the communication wavelengths is formed from the ends 39a and 39b of the wirings 32a and 32b not connected to the connecting through hole 34a. Since the central portions 35a and 35b spaced apart from each other are opposed to each other with the dielectric substrate 31 interposed therebetween, at the opposing positions thereof, the polarities are reversed and signal levels are high with each other to function as electric dipoles. . Therefore, in the coupling electrode 38, the longitudinal wave of an electric field can be efficiently emitted in the thickness direction of a board | substrate, As a result, the coupling strength with other coupling electrodes arrange | positioned at the opposing position becomes strong, and favorable communication characteristic Can be realized.

The high frequency coupler 3 which consists of such a structure is manufactured by the following manufacturing processes. First, with respect to the double-sided copper foil board | substrate which affixed copper foil as a conductive layer on both surfaces of the dielectric substrate 31, a part of copper foil is removed by an etching process and the meander-shaped wiring 32a which has a some bending part is carried out. , 32b). Next, a hole is formed in the one end of the wiring 32a, the part where the one end of the wiring 32b overlaps, and the other end of the wiring 32b by drilling or laser processing, respectively, and the hole is plated or The connection through holes 34a and 34b are completed by filling conductive materials such as conductive paste.

By the above process, the wiring 32a formed on the surface 31a of the dielectric substrate 31 and the wiring 32b of the other surface 31b are electrically connected to function as the bonding electrode 38. In addition, both ends 39a and 39b of the coupling electrode 38 function as the connection terminal part 39.

Thus, in the high frequency coupler 3, since the coupling electrode 38 is connected to one end of the wirings 32a and 32b formed on both surfaces of the dielectric substrate 31 via the connection through hole 34a. Good mechanical strength and downsizing of the high frequency coupler 3 can be realized. Moreover, by the said process, the high frequency coupler 3 can be manufactured simply by patterning one double-sided copper foil board | substrate.

Thus, the strong mechanical strength bonds on the dielectric substrate 31 without using the metal wire 207 which may be deformed by an external force compared with the high frequency coupler which concerns on the conventional example shown in FIG. 21, for example. This is because the electrode 38 is mounted. Further, miniaturization of the entire high frequency coupler can be achieved because the bonding strength can be enhanced by adjusting the length of the wiring 35 without necessarily increasing the area of the electrode.

Moreover, in the high frequency coupler 3, as a material of the dielectric substrate 31, the glass epoxy, the glass composite substrate which fixed glass, the base material of a paper, or the woven fabric of glass fiber with epoxy resin, a phenol resin, etc., Low dielectric constant polyimide, liquid crystal polymer, polytetrafluoroethylene, polystyrene, polyethylene, polypropylene, and the like, and further porous materials thereof. In particular, it is preferable that the dielectric substrate 31 use a material having a low dielectric constant in view of electrical characteristics.

Moreover, in the manufacturing process mentioned above, in the high frequency coupler 3, although the wiring 32a, 32b was formed by the etching process using the double-sided board | substrate which affixed the copper foil, both surfaces of the dielectric substrate 31 were formed. The pattern 31 may be formed in a masked state by plating, vacuum deposition, or the like, or may be formed by patterning such as etching after formation.

As the material of the wirings 32a and 32b, a good conductor such as aluminum, gold, silver, etc. can be used in addition to copper, but any conductor can be used as long as it is a conductor having a high conductivity, not limited to these materials.

Moreover, since the coupling electrode 38 forms the wiring 32a, 32b in the meander shape which has a some bending part, the space of each surface 31a, 31b of the dielectric substrate 31 is utilized effectively. This can reduce the size of the coupling electrode 38 itself.

As described later, the length of the coupling electrode 38 is approximately one wavelength of the communication frequency. However, by forming these wirings in a thin dense form, the formation space of the coupling electrode 38 can be reduced, resulting in a high frequency coupler. This is because the area of (3) can be reduced.

In addition, as described above, the wiring patterns of the wirings 32a and 32b in the bonding electrode 38 have meanders having bent portions having different shapes from the viewpoint of effectively utilizing the space of the dielectric substrate 31. Two or more patterns of a shape may be connected, and an L-shaped, circular arc-shaped repeating pattern, etc. may be used.

Next, in order to investigate the performance of the high frequency coupler 3, the bond strength was analyzed using the 3D electromagnetic field simulator HFSS manufactured by Ansoft. Here, as an analysis model of the high frequency coupler 3, the thing of the following conditions was used. That is, polytetrafluoroethylene was set for the material of the dielectric substrate 31 and copper was set for the material of the conductor of the bonding electrode 38. Moreover, as for the magnitude | size of the high frequency coupler 3, the surface in which the wiring pattern is formed was 6.5 mm x 6.5 mm, and the board | substrate thickness was 1.67 mm.

The coupling strength is evaluated by the transmission characteristic S21 of the S parameter used for evaluating the high frequency transmission characteristics, and the input port is defined between the both ends 39a and 39b of the connection terminal portion 39 serving as the signal input / output terminal of the high frequency coupler. , The bond strength S21 between the ports of a pair of high frequency couplers was calculated. 10 shows the relative arrangement between the high frequency couplers 3 and 150 used for the analysis of the bond strength S21. In this case, the wirings 32a of the coupling electrode 38 of the high frequency coupler 3 and the center axes of the electrodes 150a of the high frequency coupler 150 are opposed to each other so as to face each other so as to be spaced apart from each other by 15 mm or 100 mm. The frequency characteristic of the intensity S21 was investigated. In addition, in this example, the reference high frequency coupler which has plate-shaped electrode 150a is used for one high frequency coupler 150 which is a reference | standard of evaluation.

Moreover, in order to see the generation | occurrence | production state of the electric field in the high frequency coupler 3, the electric field vector distribution of the high frequency coupler 3 vicinity was also investigated.

FIG. 11 analyzes the electric field distribution at 4.5 kHz of the high frequency coupler 3, and shows the electric field distribution in the cross section obtained by dividing the dotted line Y-Y 'in FIG. 9 in the thickness direction. As is apparent from FIG. 11, a strong electric field distribution is shown between meander-shaped wirings 32a and 32b of both surfaces 31a and 31b of the dielectric substrate 31 constituting the coupling electrode 38. The electric field is distributed in an arc shape from the coupling electrode 38 to the outside.

FIG. 12 shows the electric field distribution on the plane 1 mm away from the surface 31 a on which the wiring 32 a of the high frequency coupler 3 is formed in the vertical direction. As is apparent from FIG. 12, an electric field is distributed substantially concentrically from the central portions 35a and 35b of the coupling electrode 38. For this reason, the longitudinal wave of a strong electric field is radiated in the thickness direction of the high frequency coupler 3 at the time of resonance.

Since the length of the coupling electrode 38 is approximately 1 wavelength, the center portion 35a of the wiring 32a which becomes a portion corresponding to a portion of approximately 1/4 of the wavelength from the end of the coupling electrode 38. This is because the potential difference becomes maximum at. In this way, it was confirmed by analysis that the high frequency coupler 3 generates a strong electric field around the center of the substrate surface.

FIG. 13 shows an analysis result of the coupling strength S21 between the high frequency coupler 3 and the reference high frequency coupler 150, and has a coupling strength of -25 dB at 4.5 mV at a communication distance of 15 mm of opposing distance. In the -3 kHz bandwidth, which is a frequency band showing the intensity attenuated by 3 kHz from the maximum intensity, a broadband characteristic of 0.86 kHz was obtained. For example, in TransferJet (registered trademark), a bandwidth of 560 MHz is required, and in general, the center frequency is shifted depending on the deviation of the high frequency coupler and the degree of impedance matching with the circuit board, but the high frequency coupler 3 is required. Since it has a bandwidth of about 1.5 times the bandwidth, good communication can be performed without being affected by these variations. Moreover, at the non-communication distance of 100 mm of opposing distances, the communication interruption property of -60 Hz or less is acquired.

As described above, in the high frequency coupler 3 according to the second embodiment, as is clear from the above simulation, miniaturization of the entire apparatus is realized while realizing good communication characteristics and achieving compatibility with mechanical strength. We can plan.

&Lt; Third Embodiment >

Next, the high frequency coupler 4 which concerns on 3rd Embodiment shown in FIG. 14 and FIG. 15 as an antenna apparatus attached to the communication system 100 is demonstrated.

14 and 15 show the high frequency coupler 4 by changing the viewpoint, and the dielectric substrates 41, 42a, and 42b are transmitted to show the wound state of the coil 48 to be described later.

As shown in FIG. 14 and FIG. 15, the high frequency coupler 4 includes the dielectric substrates 41, 42a, 42b, and a coil 48 having a length approximately equal to a communication wavelength, and both ends of the coil 48. The connection terminal part 49 for connection with a circuit board is formed in this.

The dielectric substrates 42a and 42b are dielectric members laminated on both surfaces of the dielectric substrate 41 by, for example, a coating step described later. In addition, the dielectric substrates 41, 42a, 42b are, for example, glass epoxy, glass composite substrates, or a low dielectric constant in which glass, a substrate of a paper, or a woven fabric of a glass fiber are fixed with an epoxy resin, a phenol resin, or the like as a material. Polyimide, liquid crystal polymer, polytetrafluoroethylene, polystyrene, polyethylene, polypropylene, and the like, and further porous materials. In particular, it is preferable that the dielectric substrates 41, 42a, 42b use a material having a low dielectric constant in terms of electrical characteristics.

The connection terminal part 49 is a terminal for connection with the above-mentioned transmission / reception circuit part 104, for example, connection by a flexible printed circuit board via an anisotropic conductive film, or a thin wire coaxial cable via a surface mount receptacle. It becomes connection means, such as a connection. For this reason, the connection terminal part 49 adjusts the shape, and abbreviate | omits the connection through hole 45a mentioned later according to a connection method, divides into both surfaces of the dielectric substrate 41, and arrange | positions each terminal, respectively. You may employ | adopt.

The coil 48 functions as a coupling electrode which is electromagnetically coupled to communicate with electrodes of other antenna devices arranged at opposing positions. The coil 48 is configured by connecting the upper coil 47a and the lower coil 47b to be described later, and the wiring length connecting the upper coil 47a and the lower coil 47b, that is, the length of the coil 48 is It is adjusted to be approximately one wavelength of the communication frequency. The coil 48 is positioned at a quarter of the communication wavelength from the upper terminal coil 47a which is not connected to the connecting through hole 45b to be described later and the connecting terminal portion 49 which is an end of the lower surface coil 47b. Are opposed to each other with the dielectric substrates 41, 42a, and 42b interposed therebetween.

As a specific example, in the coil 48, the positions 1/4 apart of the communication wavelength from the two ends of the connecting terminal portion 49 are the central portions 46a and 46b of the dielectric substrates 41, 42a and 42b, respectively. .

In this way, in the coil 48, as is clear from the following evaluation, the position of 1/4 of the communication wavelength from the two ends of the connection terminal portion 49 is interposed between the dielectric substrates 41, 42a, 42b. Because they are opposed to each other, at their opposite positions, the polarities are opposite and the signal levels are high, so that they function as electric dipoles. Therefore, in the coil 48, the longitudinal wave of the electric field can be efficiently emitted in the thickness direction of the substrate, and as a result, the coupling strength between the other coupling electrodes arranged at the opposing positions becomes stronger, thereby realizing good communication characteristics. Can be.

The high frequency coupler 4 which consists of such a structure is manufactured by the following manufacturing processes. First, a plurality of upper surface lines 43a and lower surface lines 43b made of conductive metals such as copper and aluminum are formed on both surfaces of the dielectric substrate 42a, and one end of the upper surface line 43a is formed on the lower surface line 43b. One end and the other end of the upper surface line 43a are sequentially overlapped with the other lower surface line 43b adjacent to each other and the dielectric substrate 42a is interposed therebetween.

In addition, formation of the some upper surface line 43a and the lower surface line 43b may be formed by the process of plating, vapor deposition, etc. on both surfaces of the dielectric substrate 42a, and the dielectric substrate 42a by which copper foil was coat | covered on both surfaces. May be formed by etching.

With respect to the dielectric substrate 42a on which the upper surface line 43a and the lower surface line 43b are formed, a plurality of through holes 44 are drilled or drilled at a position where the upper surface line 43a and the lower surface line 43b overlap. Form. By filling these through holes 44 with a metal plating process or a conductive paste, all upper surface lines 43a and lower surface lines 43b formed on both surfaces of the dielectric substrate 42a are electrically connected through the through holes 44. Then, the upper coil 47a on the solenoid is completed. The coil 47b is formed on the dielectric substrate 42b in the same manner as in the upper coil 47a. In addition, one end of the upper surface coil 47a is also connected to one of the connection terminal portions 49 via the through hole 44 in the above process.

Next, through holes 45a and 45b for connection are formed in the dielectric substrate 41. This is formed by embedding a metal plating treatment, a conductive paste, or a metal rod in a portion open by a drill, a laser, or the like. The dielectric substrate 42a is covered with one end of the upper coil 47a so as to overlap the through hole 45b for connection on both surfaces of the dielectric substrate 41, and one end of the lower coil 47b is connected through The other end of the hole 45b and the lower surface coil 47b overlaps with the connection through hole 45a, and is covered and electrically connected. As a result, the metal parts are all connected, and one coil 48 having both ends of the connection terminal portion 49 is formed in the dielectric substrates 41, 42a, and 42b.

In addition, as described above, the coating of the substrate may be thermocompression-bonded depending on the material of the dielectric substrate, but it is preferable to use an adhesive from the viewpoint of preventing deformation and the like. When both ends of the connection through holes 45a and 45b that require electrical connection are made to be convex with respect to the dielectric substrate 41, they can be reliably connected to the upper coil 47a and the lower coil 47b through the adhesive. have. Moreover, in order to ensure connection, it is preferable to use the anisotropic conductive film which omitted the adhesive material or mix | blended anisotropic conductive particle in the periphery of the said connection part.

In addition, the following method may be used for the connection of the upper surface coil 47a formed in the dielectric substrate 42a and the lower surface coil 47b formed in the dielectric substrate 42b. First, the dielectric substrate 42a with the upper coil 47a and the dielectric substrate 42b with the lower coil 47b are attached to both surfaces of the dielectric substrate 41 with an adhesive or the like. Thereafter, holes are formed in both ends of the upper surface coil 47a and the lower surface coil 47b by a drill or the like, and one end of the upper surface coil 47a and the lower surface coil 47b is connected to each other through a through hole 45b. The coil 48 can be formed by connecting the other end of the coil 47b with the connection terminal part 49 previously prepared at the time of formation of the upper surface line 43a in the connection through hole 45a. This coil 48 functions as a coupling electrode which can be electromagnetically coupled and communicates with the electrode of the other antenna apparatus arrange | positioned in the opposing position.

In this manner, the coil 48 is wound in a coil shape through the through holes 44 on the upper and lower surfaces of each of the dielectric substrates 42a and 42b stacked on both surfaces of the dielectric substrate 41, thereby forming the dielectric substrate 42a, Since one ends of the wires wound on both surfaces of the 42b) are connected through the connecting through hole 45b, good mechanical strength and miniaturization of the entire high frequency coupler 1 can be realized.

Thus, the strong mechanical strength bonds on the dielectric substrate 41 without using the metal wire 207 which may be deformed by external force, compared with the high frequency coupler which concerns on the conventional example shown in FIG. 21, for example. This is because the coil 48 which functions as an electrode for mounting is mounted. Further, miniaturization of the entire high frequency coupler can be achieved because the bonding strength can be strengthened by adjusting the length of the entire coil 48 without necessarily increasing the area of the electrode.

Next, in order to investigate the performance of the high frequency coupler 4, the bond strength was analyzed using the 3D electromagnetic field simulator HFSS manufactured by Ansoft. Here, as an analysis model of the high frequency coupler 4, the thing of the following conditions was used. In other words, the dielectric material is a polytetrafluoroethylene for the dielectric substrate 41 and a liquid crystal polymer for the dielectric substrates 42a and 42b. In addition, copper was set for the material of the coil 48. As for the size of the high frequency coupler 4, the surface in which the wiring pattern is formed was 6.5 mm x 6.5 mm, and the board | substrate thickness was 2 mm.

The coupling strength is evaluated by the transmission characteristic S21 of the S parameter used to evaluate the high frequency transmission characteristics, and the power input port is provided between both ends of the connection terminal portion 49 serving as the signal input / output terminal of the high frequency coupler. Fig. 16 shows the relative arrangement between the high frequency couplers using the bond strength S21 in the analysis. Here, the frequency characteristics of the bonding strength S21 are made to face each other so that the upper axis 47a of the high frequency coupler 4 and the central axis of the electrode 150a of the high frequency coupler 150 coincide with each other. Investigate. In addition, in this example, the reference high frequency coupler which has plate-shaped electrode 150a is used for one high frequency coupler 150 which is a reference | standard of evaluation.

Moreover, in order to see the generation | occurrence | production state of the electric field in the high frequency coupler 4, the electric field vector distribution of the high frequency coupler 4 vicinity was also investigated.

FIG. 17 shows an analysis portion of the electric field vector distribution, which is indicated by the dotted line of XX 'in the figure, that is, the XY axis and the thickness in the width direction of the substrate passing through the central portions 46a and 46b of the high frequency coupler 4. The plane which extends in the Z-axis direction is used as the analysis plane. Here, the direction toward the connection terminal part 49 from the center with respect to the high frequency coupler 4 of a rectangular parallelepiped is made into the Y-axis which is a longitudinal direction.

18 and 19 show the analysis results of the electric field vector distribution at 4.5 kHz which is the resonance frequency of the high frequency coupler 4 in the YZ plane and the XY plane, respectively. Here, FIG. 19 shows electric field distribution in the surface 1 mm apart from the surface in which the top coil 47a of the high frequency coupler 4 was formed. As is clear from these two figures, electrodes having different polarities are generated between the upper coil 47a and the lower coil 47b, causing a strong electric field distribution therebetween. For this reason, the longitudinal wave of a strong electric field is radiated in the Z-axis direction which is the thickness direction of the high frequency coupler 4 at the time of resonance.

FIG. 20 shows an analysis result of the coupling strength S21 between the high frequency coupler 4 and the reference high frequency coupler 150, and has a coupling strength of -25 dB at 4.5 mV at a communication distance of 15 mm of opposing distance. At -3 kHz bandwidth, more than 1.1 GHz broadband characteristics were obtained. For example, in TransferJet (registered trademark), a bandwidth of 560 MHz is required, and in general, the center frequency is shifted depending on the deviation of the high frequency coupler and the degree of impedance matching with the circuit board. Since it has about twice the bandwidth of, good communication can be performed without being affected by these variations. Moreover, at the non-communication distance of 100 mm of opposing distances, the communication cutoff of -47 kPa or less is obtained.

As described above, in the high frequency coupler 4 according to the third embodiment, as is clear from the above simulation, while achieving good communication characteristics and achieving compatibility with mechanical strength, the entire apparatus can be miniaturized. can do.

<High frequency coupler concerning 1st-3rd embodiment>

In the high frequency coupler according to the first to third embodiments described above, a coupling electrode composed of a first wiring having a length of approximately half the communication wavelength and a conductor electrically connected to the first wiring is formed on the dielectric substrate. As a result, good mechanical strength and miniaturization of the entire antenna device can be realized. Moreover, since the high frequency coupler which concerns on 1st-3rd embodiment mentioned above couple | bonds the electromagnetic field with the electrode of the other antenna apparatus arrange | positioned on the extension line which connects the center part of a 1st wiring and a conductor, in the center part of a 1st wiring By the state where the signal level is high, the longitudinal wave of the electric field is efficiently emitted in the thickness direction of the substrate, whereby the bond strength between the other bonding electrodes arranged at the opposing positions becomes stronger and good communication characteristics can be realized.

As described above, the high frequency coupler according to the first to third embodiments to which the present invention is applied can realize both good communication characteristics and mechanical strength, and can downsize the entire apparatus.

Claims (9)

An antenna device for performing information communication by electromagnetic field coupling between opposing pairs of electrodes by a predetermined communication wavelength,
A coupling electrode formed on the dielectric substrate, the coupling electrode being electromagnetically coupled to an electrode of another antenna device so as to be communicable;
The coupling electrode,
A first wiring having a length of approximately half of the communication wavelength, and a conductor electrically connected to the first wiring,
The center part of the said 1st wiring and the said conductor are formed in the position which opposes the thickness direction of the said derivative board | substrate, and the electrode of the said other antenna apparatus arrange | positioned on the extension line which connects the center part of the said 1st wiring, and the said conductor; An antenna device, characterized in that coupled to the electromagnetic field. The method of claim 1,
The conductor is a ground layer formed on one surface of the dielectric substrate,
The first wiring is formed to have a plurality of bent portions on a surface of the dielectric substrate facing the surface on which the ground layer is formed, and an input / output terminal of a signal is formed at one end of the first wiring, and the other An end of the antenna device having a structure in which it is electrically connected with the ground layer. 3. The method of claim 2,
The coupling electrode is connected to a stub of a predetermined length branched from an input / output terminal formed on the first wiring. The method of claim 1,
The first wiring is formed on one surface of the dielectric substrate,
The conductor has a length of approximately half of the communication wavelength, is formed on a surface of the dielectric substrate facing the surface on which the first wiring is formed, and one end is connected through the first wiring and through hole. Second wiring,
The first wiring and the second wiring are opposed to each other with positions of one quarter of a communication wavelength from an end portion not connected to the through hole facing each other with the dielectric substrate interposed therebetween. 5. The method of claim 4,
The first wiring and the second wiring are connected to one end of a meander-shaped wiring having a plurality of bent portions through a through hole. The method of claim 5, wherein
First and second dielectric layers are laminated on both surfaces of the dielectric substrate,
The first wiring is wound in a coil form through upper and lower surfaces of the stacked first dielectric layers of the dielectric substrate,
The second wiring is wound in a coil form through upper and lower surfaces of the stacked second dielectric layers of the dielectric substrate,
An antenna device, characterized in that one end of the first wire and the second wire wound on both surfaces of the dielectric substrate are connected through a through hole. A communication apparatus for performing information communication by electromagnetic field coupling between a pair of opposing electrodes by a predetermined communication wavelength,
A coupling electrode formed on the dielectric substrate, the coupling electrode being electromagnetically coupled to an electrode of another antenna device so as to be communicable;
A transmission / reception processing unit electrically connected to the coupling electrode to perform transmission / reception of signals;
The coupling electrode,
A first wiring having a length of approximately half of the communication wavelength, and a conductor electrically connected to the first wiring,
The center part of the said 1st wiring and the said conductor are formed in the position which opposes the thickness direction of the said derivative board | substrate, and the electrode of the said other antenna apparatus arrange | positioned on the extension line which connects the center part of the said 1st wiring, and the said conductor; A communication device characterized in that the electromagnetic field coupling. The method of claim 7, wherein
The conductor is a ground layer formed on one surface of the dielectric substrate,
The first wiring is formed to have a plurality of bent portions on a surface of the dielectric substrate facing the surface on which the ground layer is formed, and an end portion of the first wiring not connected to the transmission / reception processing portion is the ground layer. And a structure electrically connected with the communication device. The method of claim 7, wherein
The first wiring is formed on one surface of the dielectric substrate,
The conductor has a length of approximately half of the communication wavelength, is formed on the surface of the dielectric substrate opposite to the surface on which the first wiring is formed, and one end is connected through the first first wiring and through hole. Second wiring,
The transmission / reception processing unit is electrically connected to the coupling electrode through a connection terminal respectively formed at ends of the first wiring and the second wiring not connected to the through hole,
The said 1st wiring and the said 2nd wiring are each communication positions which the quarter position of the communication wavelength from the said connection terminal oppose each other across the said dielectric substrate.

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