KR20130018531A - Manufacturing method of an array substrate for liquid crystal display - Google Patents
Manufacturing method of an array substrate for liquid crystal display Download PDFInfo
- Publication number
- KR20130018531A KR20130018531A KR1020120080760A KR20120080760A KR20130018531A KR 20130018531 A KR20130018531 A KR 20130018531A KR 1020120080760 A KR1020120080760 A KR 1020120080760A KR 20120080760 A KR20120080760 A KR 20120080760A KR 20130018531 A KR20130018531 A KR 20130018531A
- Authority
- KR
- South Korea
- Prior art keywords
- copper
- film
- metal film
- based metal
- forming
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000010949 copper Substances 0.000 claims abstract description 130
- 229910052751 metal Inorganic materials 0.000 claims abstract description 112
- 239000002184 metal Substances 0.000 claims abstract description 112
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 106
- 229910052802 copper Inorganic materials 0.000 claims abstract description 106
- 238000005530 etching Methods 0.000 claims abstract description 88
- 239000000203 mixture Substances 0.000 claims abstract description 83
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 47
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 37
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000011737 fluorine Substances 0.000 claims abstract description 21
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 21
- 150000001875 compounds Chemical class 0.000 claims abstract description 20
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 19
- 150000007522 mineralic acids Chemical class 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 239000010408 film Substances 0.000 claims description 199
- 239000007788 liquid Substances 0.000 claims description 23
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 17
- -1 azole compound Chemical class 0.000 claims description 16
- 229910017855 NH 4 F Inorganic materials 0.000 claims description 14
- 229910003437 indium oxide Inorganic materials 0.000 claims description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 6
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- DEPDDPLQZYCHOH-UHFFFAOYSA-N 1h-imidazol-2-amine Chemical compound NC1=NC=CN1 DEPDDPLQZYCHOH-UHFFFAOYSA-N 0.000 claims description 4
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N 4-methylimidazole Chemical compound CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- RLWNPPOLRLYUAH-UHFFFAOYSA-N [O-2].[In+3].[Cu+2] Chemical compound [O-2].[In+3].[Cu+2] RLWNPPOLRLYUAH-UHFFFAOYSA-N 0.000 claims description 4
- VBKNTGMWIPUCRF-UHFFFAOYSA-M potassium;fluoride;hydrofluoride Chemical compound F.[F-].[K+] VBKNTGMWIPUCRF-UHFFFAOYSA-M 0.000 claims description 4
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 claims description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 claims description 2
- MKBBSFGKFMQPPC-UHFFFAOYSA-N 2-propyl-1h-imidazole Chemical compound CCCC1=NC=CN1 MKBBSFGKFMQPPC-UHFFFAOYSA-N 0.000 claims description 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 2
- NJQHZENQKNIRSY-UHFFFAOYSA-N 5-ethyl-1h-imidazole Chemical compound CCC1=CNC=N1 NJQHZENQKNIRSY-UHFFFAOYSA-N 0.000 claims description 2
- HPSJFXKHFLNPQM-UHFFFAOYSA-N 5-propyl-1h-imidazole Chemical compound CCCC1=CNC=N1 HPSJFXKHFLNPQM-UHFFFAOYSA-N 0.000 claims description 2
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims description 2
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 claims description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 2
- 239000012964 benzotriazole Substances 0.000 claims description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 239000011698 potassium fluoride Substances 0.000 claims description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 2
- 239000011775 sodium fluoride Substances 0.000 claims description 2
- 235000013024 sodium fluoride Nutrition 0.000 claims description 2
- BFXAWOHHDUIALU-UHFFFAOYSA-M sodium;hydron;difluoride Chemical compound F.[F-].[Na+] BFXAWOHHDUIALU-UHFFFAOYSA-M 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 21
- 230000000694 effects Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- PRSXMVQXAKTVLS-UHFFFAOYSA-N [Cu]=O.[In] Chemical compound [Cu]=O.[In] PRSXMVQXAKTVLS-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002981 blocking agent Substances 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
- 239000002888 zwitterionic surfactant Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
Abstract
The present invention comprises the steps of a) forming a gate electrode on a substrate; b) forming a gate insulating layer on the substrate including the gate electrode; c) forming a semiconductor layer on the gate insulating layer; d) forming a source / drain electrode on the semiconductor layer; And e) forming a pixel electrode connected to the drain electrode, wherein the step a) comprises: forming a copper-based metal film or a copper-based metal film and a metal oxide film on the substrate. Forming a multilayer film and etching the copper-based metal film or the multilayer film of the copper-based metal film and the metal oxide film with an etchant composition to form a gate electrode, and the step d) includes forming a copper-based metal film or copper on the semiconductor layer. Forming a multilayer film of the metal layer and the metal oxide layer and etching the copper layer or the multilayer layer of the metal layer and the metal oxide layer with an etchant composition to form a source / drain electrode, wherein the etchant composition comprises: A) Hydrogen peroxide (H 2 O 2 ) 5.0 to 25.0% by weight, B) 0.01 to 1.0% by weight of fluorine-containing compounds, C) 0.1 to 5 relative to the total weight A method for manufacturing an array substrate for a liquid crystal display device, the method comprising: 0 wt%, D) 0.5 to 3.0 wt% of an inorganic acid, and E) water residual amount.
Description
The present invention relates to a method of manufacturing an array substrate for a liquid crystal display device.
The process of forming a metal wiring on a substrate in a liquid crystal display device is usually composed of a metal film forming process by sputtering or the like, a photoresist coating process, a photoresist forming process in an optional region by exposure and development, and a step by an etching process And a cleaning process before and after the individual unit process. This etching process refers to a process of leaving a metal film in a selective region using a photoresist as a mask. Typically, dry etching using plasma or wet etching using an etching composition is used.
In such a liquid crystal display device, resistance of metal wiring has recently emerged as a major concern. This is because solving the RC signal delay problem in TFT-LCD (thin film transistor-liquid crystal display) is a key factor in increasing the panel size and realizing the high resolution, because resistance is a major factor causing RC signal delay. Therefore, it is essential to develop a low-resistance material in order to realize reduction of the RC signal delay, which is indispensably required for enlarging the TFT-LCD.
Chromium (Cr, resistivity: 12.7 × 10 -8 Ωm), molybdenum (Mo, resistivity: 5 × 10 -8 Ωm), aluminum (Al, resistivity: 2.65 × 10 -8 Ωm) and alloys thereof, which have been mainly used in the past Because of the large silver resistance, it is difficult to use as a gate and data wiring used in a large TFT LCD. Therefore, a copper-based metal film such as a copper film and a copper molybdenum film and an etchant composition therefor are attracting attention as a low resistance metal film. However, since the copper-based etching liquid compositions known to date do not meet the performance required by the user, research and development for improving performance are required.
Meanwhile, in the case of the conventional copper film etching solution using hydrogen peroxide, batch wet etching and pattern formation of a multilayer metal film made of copper or a copper alloy and molybdenum or molybdenum alloy is possible. However, there is a problem that the stability of the etching solution is greatly reduced due to the overheating phenomenon as the decomposition rate of hydrogen peroxide is accelerated by metal ions, especially copper ions, dissolved during metal layer etching. In addition, in the case of a multi-layered metal film, as the concentration of dissolved metal ions increases, the difference in the etching rate of the copper layer caused by hydrogen peroxide, the etching rate difference of the molybdenum alloy layer caused by the fluorine compound, and the effect of the electrical effect are deformed to the interface where the two metal layers are bonded. There occurs a problem that the etching characteristics are not good.
For example, Korean Patent No. 10-1002338 discloses an etchant for collectively etching a copper metal layer and a transparent conductive layer including nitric acid, hydrochloric acid, hydrogen peroxide, and an azole compound. However, in the case of the patent, there is a disadvantage in that the damage to the copper metal layer due to hydrochloric acid is difficult to use.
An object of the present invention is to provide an etching liquid composition capable of etching a multilayer film of a copper-based metal film or a copper-based metal film and a metal oxide film.
An object of the present invention is to provide an etching liquid composition in which a tapered profile excellent in straightness during etching is formed and no residue of the metal film remains.
In addition, an object of the present invention is an etching liquid capable of collectively etching the gate electrode and gate wiring, the source / drain electrode and the data wiring of the array substrate for a liquid crystal display device including a copper-based metal film or a multilayer film of a copper-based metal film and a metal oxide film. It is to provide a composition.
It is also an object of the present invention to provide a wiring forming method using the etchant composition and a method of manufacturing an array substrate for a liquid crystal display device.
The present invention comprises the steps of a) forming a gate electrode on a substrate; b) forming a gate insulating layer on the substrate including the gate electrode; c) forming a semiconductor layer on the gate insulating layer; d) forming a source / drain electrode on the semiconductor layer; And e) forming a pixel electrode connected to the drain electrode, wherein the step a) comprises: forming a copper-based metal film or a copper-based metal film and a metal oxide film on the substrate. Forming a multilayer film and etching the copper-based metal film or the multilayer film of the copper-based metal film and the metal oxide film with an etchant composition to form a gate electrode, and the step d) includes forming a copper-based metal film or copper on the semiconductor layer. Forming a multilayer film of the metal layer and the metal oxide layer and etching the copper layer or the multilayer layer of the metal layer and the metal oxide layer with an etchant composition to form a source / drain electrode, wherein the etchant composition comprises: A) Hydrogen peroxide (H 2 O 2 ) 5.0 to 25.0% by weight, B) 0.01 to 1.0% by weight of fluorine-containing compounds, C) 0.1 to 5 relative to the total weight It provides a method for producing an array substrate for a liquid crystal display device, characterized in that it comprises .0% by weight, D) 0.5 to 3.0% by weight inorganic acid, and E) the residual amount of water.
The present invention relates to a total weight of the composition, A) hydrogen peroxide (H 2 O 2 ) 5.0 to 25.0% by weight; B) 0.01 to 1.0% by weight of a fluorine-containing compound; C) 0.1 to 5.0% by weight of an azole compound; D) 0.5-3.0 wt% inorganic acid; And E) a residual amount of water, to provide an etching liquid composition for a multilayer film of a copper-based metal film or a copper-based metal film and a metal oxide film.
The present invention comprises the steps of: I) forming a multilayer film of a copper metal film or a copper metal film and a metal oxide film on a substrate; (II) selectively leaving a photoreactive material on the copper-based metal film or the multilayer film of the copper-based metal film and the metal oxide film; And iii) etching the copper-based metal film or the multilayer film of the copper-based metal film and the metal oxide film using the etchant composition of the present invention.
The present invention relates to an array substrate for a liquid crystal display device including at least one of a gate wiring, a gate electrode, a data wiring, and a source / drain electrode etched using the etchant composition.
The etching liquid composition of the present invention realizes a taper profile excellent in etching uniformity and straightness when etching a copper-based metal film or a multilayer film of a copper-based metal film and a metal oxide film.
Since the etchant composition of the present invention does not generate residue when etched, the etchant composition is free from problems such as electrical shorts, wiring defects, and reduced luminance.
In addition, the etchant composition of the present invention comprises a gate electrode, a gate wiring, a source / drain electrode and a data wiring, including a copper-based metal film or a multilayer film of a copper-based metal film and a metal oxide film, when the array substrate for a liquid crystal display device is manufactured. It can be batch etched, simplifying the etching process and maximizing process yield.
Therefore, the etchant composition of the present invention can be very usefully used in manufacturing an array substrate for a liquid crystal display device in which a circuit of a large screen and a high luminance is realized.
1 is a photograph showing an etching profile of a Cu / ITO double layer etched using the etchant composition of Example 4.
Figure 2 is a photograph showing the straightness of the Cu / ITO double layer etched using the etchant composition of Example 4.
3 is a photograph showing an etching profile of a Cu / ITO double layer etched using the etchant composition of Comparative Example 4.
Figure 4 is a photograph showing the straightness of the Cu / ITO double layer etched using the etchant composition of Comparative Example 4.
Hereinafter, the present invention will be described in detail.
The present invention provides an etching liquid composition, an etching method, an array substrate for a liquid crystal display device, and an array substrate for a liquid crystal display device, which greatly improve the stability so that the multilayer film of the copper-based metal film and the metal oxide film can be collectively etched without overheating. It is about. Here, the etchant composition is characterized in that in addition to hydrogen peroxide, containing a fluorine-containing compound, an azole compound, an inorganic acid and water.
In the present invention, the copper-based metal film includes copper as a constituent of the film, and is a concept including a multilayer film such as a single film and a double film. The copper-based metal film may be copper or a copper alloy film.
In the present invention, the metal oxide film usually comprises a ternary or tetracomponent oxide composed of a combination of AxByCzO (A, B, C = Zn, Cd, Ga, In, Sn, Hf, Zr, Ta; x, y, z≥0). As a film comprised by containing, it may be called an oxide semiconductor layer or the film | membrane which comprises an oxide semiconductor layer.
In the present invention, examples of the multilayer film of the copper-based metal film and the metal oxide film include an indium copper oxide film (ITO), an indium copper oxide film, a copper gallium zinc oxide film (IGZO), and the like. The copper indium oxide film means a multilayer film including an indium oxide metal film and a copper metal film formed on the indium oxide metal film. The copper indium oxide-based alloy film means a multilayer film including an indium oxide-based alloy film and a copper-based metal film formed on the indium oxide alloy film. The stacking order of the copper-based metal film and the metal oxide film may be changed.
One. Etchant Composition
The etchant composition of the present invention is an etching solution composition for a multilayer film of a copper metal film or a copper metal film and a metal oxide film, comprising: A) hydrogen peroxide (H 2 O 2 ), B) fluorine-containing compound, C) azole compound, D) inorganic acid, and E) Contains water.
A) hydrogen peroxide (H 2 O 2 ) included in the etchant composition of the present invention is a main component for etching the copper-based metal film, and also serves to increase the activity of the B) fluorine-containing compound.
The A) hydrogen peroxide (H 2 O 2 ) is included in the amount of 5.0 to 25.0% by weight, preferably 15.0 to 23.0% by weight based on the total weight of the composition. When included below the above-mentioned range, the copper-based metal film is not etched or the etching rate is very slow. If it is included in the above-mentioned range, process control is difficult because the etching speed is increased overall.
B) fluorine-containing compound included in the etchant composition of the present invention means a compound capable of dissociating in water to give fluorine ions. The B) fluorine-containing compound is a main component for etching the indium oxide-based metal film, and serves to remove residues inevitably generated in a solution for simultaneously etching the copper-based metal film and the metal oxide film.
The B) fluorine-containing compound is included in 0.01 to 1.0% by weight, preferably 0.05 to 0.2% by weight relative to the total weight of the composition. When included in less than the above-described range, an etching residue may occur. If it exceeds the above-mentioned range, there exists a problem that a glass substrate etching rate becomes large.
The B) fluorine-containing compound is not particularly limited as long as it can be dissociated into fluorine ions or polyatomic fluoride ions in a solution as a material used in the art. However, the B) fluorine-containing compound is ammonium fluoride (NH 4 F), sodium fluoride (NaF), potassium fluoride (KF), ammonium bifluoride (NH 4 F.HF) ), Sodium bifluoride (NaF.HF) and potassium bifluoride (potassium bifluoride: KF.HF) is preferably one or two or more selected from the group consisting of.
C) azole compound included in the etchant composition of the present invention controls the etching rate of the copper-based metal film and serves to increase the process margin by reducing the CD loss of the pattern.
The C) azole compound is contained in 0.1 to 5.0% by weight, preferably 0.5 to 1.5% by weight relative to the total weight of the composition. If it is included below the above range, the etching speed may be high, and the cisidross may be generated too large. When included in excess of the above-described range, the etching rate of the copper-based metal film is too slow, so that the etching rate of the metal oxide film is relatively high, so an undercut may occur.
The C) azole compound is aminotetrazole, benzotriazole, tolyltriazole, pyrazole, pyrrole, imidazole, 2-methylimidazole, 2- One or two or more selected from the group consisting of ethylimidazole, 2-propylimidazole, 2-aminoimidazole, 4-methylimidazole, 4-ethylimidazole and 4-propylimidazole. desirable.
D) inorganic acid included in the etchant composition of the present invention controls the etching rate of the copper-based metal film and the metal oxide film by increasing the activity of the hydrogen peroxide and the fluorine-containing compound by controlling the pH of the etchant, and It can play a role of increasing taper angle. In addition, by lowering the pH to suppress the activity of copper ions, the decomposition reaction of A) hydrogen peroxide is suppressed.
The D) inorganic acid is included in 0.5 to 3.0% by weight, preferably 1.0 to 2.0% by weight relative to the total amount of the composition. When included in less than the above-described range, the etching rate is lowered. When included in excess of the above-described range, there is a problem in that an excessive erosion defect occurs due to an excessively high etching speed and an attack is applied to the PR.
The D) inorganic acid is preferably one or two or more selected from the group consisting of nitric acid (HNO 3 ), boric acid (H 3 BO 3 ) and sulfuric acid (H 2 SO 4 ). However, it is not preferable to use hydrochloric acid (HCl) or phosphoric acid (H 3 PO 4 ) among the inorganic acids because D may cause damage to the copper-based metal film.
E) water contained in the etching liquid composition of this invention is not specifically limited, Deionized water is preferable. More preferably, deionized water having a specific resistance value of the water (that is, the degree of removal of ions in the water) of 18 kOH cm or more is used. The E) water is contained in the remaining amount so that the total weight of the etchant composition of the present invention is 100% by weight.
The etchant composition of the present invention may further include a surfactant. The surfactant serves to decrease the surface tension to increase the uniformity of the etching. The surfactant is not particularly limited as long as it can withstand the etching liquid composition of the present invention and is compatible, but is not limited to anionic surfactants, cationic surfactants, zwitterionic surfactants, nonionic surfactants, and polyhydric alcohol type surfactants. It is preferably one or two or more selected from the group consisting of.
In addition to the above components, a conventional additive may be further added, and examples of the additive include a metal ion blocking agent, a corrosion inhibitor, and the like.
A) hydrogen peroxide (H 2 O 2 ), B) fluorine-containing compound, C) azole compound, D) inorganic acid used in the present invention can be prepared by a conventionally known method, the etching liquid composition of the present invention is a semiconductor process It is desirable to have a purity of the dragon.
The etching liquid composition of the present invention realizes a taper profile excellent in etching uniformity and straightness when etching a copper-based metal film or a multilayer film of a copper-based metal film and a metal oxide film.
Since the etchant composition of the present invention does not generate residue when etched, the etchant composition is free from problems such as electrical shorts, wiring defects, and reduced luminance.
In addition, the etchant composition of the present invention can batch-etch gate electrodes, gate wirings, source / drain electrodes, data wirings, and pixel electrodes when manufacturing an array substrate for a liquid crystal display device, simplifying an etching process and maximizing process yield. Let's do it.
Therefore, the etchant composition of the present invention can be very usefully used in manufacturing an array substrate for a liquid crystal display device in which a circuit of a large screen and a high luminance is realized.
2. Wiring Formation Method
The wiring forming method of the present invention
I) forming a multilayer film of a copper-based metal film or a copper-based metal film and a metal oxide film on the substrate;
(II) selectively leaving a photoreactive material on the copper-based metal film or the multilayer film of the copper-based metal film and the metal oxide film; And
III) etching the copper-based metal film or the multilayer film of the copper-based metal film and the metal oxide film by using the etchant composition of the present invention.
In the wiring forming method of the present invention, the photoreactive material is preferably a conventional photoresist material, and can be selectively left by conventional exposure and development processes.
3. Manufacturing method of array substrate for liquid crystal display device
The manufacturing method of the array substrate for liquid crystal display devices of this invention,
a) forming a gate electrode on the substrate;
b) forming a gate insulating layer on the substrate including the gate electrode;
c) forming a semiconductor layer on the gate insulating layer;
d) forming a source / drain electrode on the semiconductor layer; And
e) forming a pixel electrode connected to the drain electrode, the method comprising the steps of:
In step a), a multilayer film of a copper-based metal film or a copper-based metal film and a metal oxide film is formed on a substrate, and the multilayer film of the copper-based metal film or a copper-based metal film and a metal oxide film is etched with an etchant composition according to the present invention. Forming an electrode,
In step d), a multilayer film of a copper-based metal film or a copper-based metal film and a metal oxide film is formed on the semiconductor layer, and the multilayer film of the copper-based metal film or the copper-based metal film and the metal oxide film is etched with the etching solution composition of the present invention. Forming a source / drain electrode.
The array substrate for a liquid crystal display may be a thin film transistor (TFT) array substrate. The array substrate for a liquid crystal display device may include at least one of a gate electrode, a gate wiring, a source / drain electrode, and a data wiring etched using the etchant composition of the present invention.
Hereinafter, the present invention will be described in detail through examples. However, the following examples and the like are provided to explain the present invention in more detail, and the scope of the present invention is not limited thereto.
Example 1 To Example 7 , Comparative Example 1 To Comparative Example 4 : Etchant Preparation of the composition
180 kg of the etchant composition of Examples 1 to 7 and Comparative Examples 1 to 4 was prepared according to the composition shown in Table 1 below.
(weight%)
ATZ: aminotetrazol
Test Example : Etchant Evaluation of composition characteristics
<Etching of Cu / ITO and Cu / IGZOx>
ITO or IGZOx was deposited on a glass substrate (100 mm × 100 mm), and a copper film was deposited on the ITO or IGZOx, and a photoresist having a predetermined pattern was formed on the substrate through a photolithography process. . Thereafter, an etching process was performed on Cu / ITO and Cu / IGZOx using the etchant compositions of Examples 1 to 7 and Comparative Examples 1 to 4.
Experimental equipment of the spray etching method (model name: ETCHER (TFT), SEMES company) was used, the temperature of the etching liquid composition during the etching process was about 30 ℃. The etching time was about 100 seconds. The profile of the copper-based metal film etched in the etching process was examined using a cross-sectional SEM (Hitachi, model name S-4700), and the results are shown in Table 2 below.
(Note) ○: Good, △: Normal, Х: Poor
Referring to Table 2, the etchant compositions of Examples 1 to 7 all exhibited good etching characteristics.
Therefore, it can be seen that the etchant composition of the present invention is very suitable for etching copper-based metal films and metal oxide films, and is also very bonded to these batch etchings.
In addition, even when 3000 ppm of Cu was eluted, the etching liquid compositions of Examples 1 to 7 rose only up to a maximum of 35.1 ° C., which showed greatly improved superheat stability. On the other hand, in Comparative Example 1, in which the inorganic acid was not added, Cu was not etched due to the high pH range (
1 is a photograph showing an etching profile of a Cu / ITO double layer etched using the etchant composition of Example 4. FIG. Figure 2 is a photograph showing the straightness of the Cu / ITO double layer etched using the etchant composition of Example 4.
1 and 2, Cu / ITO etched with the etchant composition according to Example 4 showed a good taper profile. And, the etching straightness was excellent.
3 is a photograph showing an etching profile of a Cu / ITO double layer etched using the etchant composition of Comparative Example 4. Figure 4 is a photograph showing the straightness of the Cu / ITO double layer etched using the etchant composition of Comparative Example 4.
Referring to FIGS. 3 and 4, the Cu / ITO etched with the etchant composition according to Comparative Example 4 was not very good in the etching profile and the etching straightness.
Claims (11)
b) forming a gate insulating layer on the substrate including the gate electrode;
c) forming a semiconductor layer on the gate insulating layer;
d) forming a source / drain electrode on the semiconductor layer; And
e) forming a pixel electrode connected to the drain electrode, the method comprising the steps of:
In step a), a multilayer film of a copper-based metal film or a copper-based metal film and a metal oxide film is formed on a substrate, and the gate-based electrode is formed by etching the copper-based metal film or the copper-based metal film and a metal oxide film with an etchant composition. Including the steps of:
In step d), a multilayer film of a copper-based metal film or a copper-based metal film and a metal oxide film is formed on the semiconductor layer, and the multilayer film of the copper-based metal film or the copper-based metal film and the metal oxide film is etched with an etchant composition to form a source / drain. Forming an electrode,
The etching liquid composition, A) hydrogen peroxide (H 2 O 2 ) 5.0 to 25.0% by weight, B) fluorine-containing compound 0.01 to 1.0% by weight, C) azole compound 0.1 to 5.0% by weight, D) inorganic acid 0.5 To 3.0% by weight and E) water residual amount manufacturing method of an array substrate for a liquid crystal display device.
The method of manufacturing an array substrate for a liquid crystal display device, wherein the array substrate for a liquid crystal display device is a thin film transistor (TFT) array substrate.
(II) selectively leaving a photoreactive material on the copper-based metal film or the multilayer film of the copper-based metal film and the metal oxide film; And
In the wiring forming method comprising etching the copper-based metal film or the multilayer film of the copper-based metal film and the metal oxide film using an etching liquid composition,
The etching liquid composition, A) hydrogen peroxide (H 2 O 2 ) 5.0 to 25.0% by weight, B) fluorine-containing compound 0.01 to 1.0% by weight, C) azole compound 0.1 to 5.0% by weight, D) inorganic acid 0.5 To 3.0 wt% and E) water residual amount.
A) 5.0 to 25.0 weight percent hydrogen peroxide (H 2 O 2 );
B) 0.01 to 1.0% by weight of a fluorine-containing compound;
C) 0.1 to 5.0% by weight of an azole compound;
D) 0.5-3.0 wt% inorganic acid; And
E) comprising a residual amount of water,
An etching liquid composition for multilayer films of a copper metal film or a copper metal film and a metal oxide film.
The B) fluorine-containing compound is ammonium fluoride (NH 4 F), sodium fluoride (NaF), potassium fluoride (KF), ammonium bifluoride (NH 4 F.HF), Sodium bifluoride (NaF.HF) and potassium bifluoride (potassium bifluoride: KF.HF), characterized in that one or two or more selected from the group consisting of,
An etching liquid composition for multilayer films of a copper metal film or a copper metal film and a metal oxide film.
The C) azole compound is aminotetrazole, benzotriazole, tolyltriazole, pyrazole, pyrrole, imidazole, 2-methylimidazole, 2- One or two or more selected from the group consisting of ethylimidazole, 2-propylimidazole, 2-aminoimidazole, 4-methylimidazole, 4-ethylimidazole and 4-propylimidazole. Characterized by
An etching liquid composition for multilayer films of a copper metal film or a copper metal film and a metal oxide film.
The D) inorganic acid is one or two or more selected from the group consisting of nitric acid (HNO 3 ), boric acid (H 3 BO 3 ) and sulfuric acid (H 2 SO 4 ),
An etching liquid composition for multilayer films of a copper metal film or a copper metal film and a metal oxide film.
The copper-based metal film is characterized in that the copper or copper alloy film,
An etching liquid composition for multilayer films of a copper metal film or a copper metal film and a metal oxide film.
The metal oxide film contains a ternary or tetracomponent oxide composed of a combination of AxByCzO (A, B, C = Zn, Cd, Ga, In, Sn, Hf, Zr, Ta; x, y, z≥0). It is a film,
An etching liquid composition for multilayer films of a copper metal film or a copper metal film and an indium oxide metal film.
The multilayer film of the copper-based metal film and the metal oxide film is characterized in that the copper indium oxide film (ITO), copper indium oxide alloy film or copper gallium zinc oxide film (IGZO),
An etching liquid composition for multilayer films of a copper metal film or a copper metal film and an indium oxide metal film.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101127458A TWI566022B (en) | 2011-08-04 | 2012-07-30 | Manufacturing method of an array substrate for liquid crystal display,method of forming a line and etchant composition for a multi-layer film |
| CN201210276332.3A CN102983101B (en) | 2011-08-04 | 2012-08-03 | Manufacturing method of array substrate for liquid crystal display |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110077728 | 2011-08-04 | ||
| KR20110077728 | 2011-08-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20130018531A true KR20130018531A (en) | 2013-02-25 |
Family
ID=47897257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020120080760A KR20130018531A (en) | 2011-08-04 | 2012-07-24 | Manufacturing method of an array substrate for liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20130018531A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160005640A (en) | 2014-07-07 | 2016-01-15 | 솔브레인 주식회사 | Etchant compositions for composite metal layer and method for forming metal line using the same |
| KR20160090575A (en) * | 2015-01-22 | 2016-08-01 | 동우 화인켐 주식회사 | Etching solution composition for indium oxide layer and method for etching copper-based metal layer using the same |
-
2012
- 2012-07-24 KR KR1020120080760A patent/KR20130018531A/en active Search and Examination
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160005640A (en) | 2014-07-07 | 2016-01-15 | 솔브레인 주식회사 | Etchant compositions for composite metal layer and method for forming metal line using the same |
| KR20160090575A (en) * | 2015-01-22 | 2016-08-01 | 동우 화인켐 주식회사 | Etching solution composition for indium oxide layer and method for etching copper-based metal layer using the same |
| CN105820819A (en) * | 2015-01-22 | 2016-08-03 | 东友精细化工有限公司 | Etching solution composition for indium oxide layer and method for etching copper-based metal layer using the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101586500B1 (en) | Manufacturing method of an array substrate for liquid crystal display | |
| KR101951045B1 (en) | Manufacturing method of an array substrate for liquid crystal display | |
| KR101845083B1 (en) | Manufacturing method of an array substrate for liquid crystal display | |
| TWI524428B (en) | Method of fabricating array substrate for liquid crystal display | |
| KR102137013B1 (en) | Manufacturing method of an array substrate for display device | |
| TW201307972A (en) | Manufacturing method of an array substrate for liquid crystal display, method of forming a wiring, etching agent composition used for the multi-layer film and array substrate for liquid crystal display | |
| KR101586865B1 (en) | Manufacturing method of an array substrate for liquid crystal display | |
| KR101939842B1 (en) | Method for forming metal line | |
| KR101941289B1 (en) | Manufacturing method of an array substrate for liquid crystal display | |
| KR101560000B1 (en) | Manufacturing method of an array substrate for liquid crystal display | |
| KR102282958B1 (en) | Etchant composition and manufacturing method of an array for liquid crystal display | |
| KR20130018531A (en) | Manufacturing method of an array substrate for liquid crystal display | |
| KR102505196B1 (en) | Etchant composition for copper-containing metal layer and preparing method of an array substrate for liquid crystal display using same | |
| KR102459685B1 (en) | Etchant for cupper-based metat layer, manufacturing method of an array substrate for display using the same and an array substrate for display | |
| KR20120065019A (en) | Manufacturing method of an array substrate for liquid crystal display | |
| KR20160090575A (en) | Etching solution composition for indium oxide layer and method for etching copper-based metal layer using the same | |
| KR102281191B1 (en) | Etchant composition and manufacturing method of an array for liquid crystal display | |
| KR102282957B1 (en) | Etchant composition and manufacturing method of an array for liquid crystal display | |
| KR101608088B1 (en) | Method for fabricating array substrate for a liquid crystal display device | |
| KR101951044B1 (en) | Manufacturing method of an array substrate for liquid crystal display | |
| KR102310093B1 (en) | Manufacturing method of an array substrate for liquid crystal display | |
| KR101608089B1 (en) | Method for fabricating array substrate for a liquid crystal display device | |
| KR101845084B1 (en) | Manufacturing method of an array substrate for liquid crystal display | |
| KR102198338B1 (en) | Etchant composition for copper-containing metal layer and preparing method of an array substrate for liquid crystal display using same | |
| KR102384594B1 (en) | Manufacturing method of an array substrate for display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| AMND | Amendment | ||
| E601 | Decision to refuse application | ||
| AMND | Amendment | ||
| E90F | Notification of reason for final refusal | ||
| AMND | Amendment |