KR20120067567A - Power amplifying apparatus - Google Patents

Power amplifying apparatus Download PDF

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Publication number
KR20120067567A
KR20120067567A KR1020100129043A KR20100129043A KR20120067567A KR 20120067567 A KR20120067567 A KR 20120067567A KR 1020100129043 A KR1020100129043 A KR 1020100129043A KR 20100129043 A KR20100129043 A KR 20100129043A KR 20120067567 A KR20120067567 A KR 20120067567A
Authority
KR
South Korea
Prior art keywords
voltage
current
bias current
output
power
Prior art date
Application number
KR1020100129043A
Other languages
Korean (ko)
Inventor
남중진
Original Assignee
삼성전기주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전기주식회사 filed Critical 삼성전기주식회사
Priority to KR1020100129043A priority Critical patent/KR20120067567A/en
Publication of KR20120067567A publication Critical patent/KR20120067567A/en

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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0266—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE: An apparatus for amplifying power is provided to control a bias current by directly detecting a bias current on a path of the bias current. CONSTITUTION: A power amplifier(11) outputs an output high frequency signal having high power by amplifying power of an input high frequency signal. A current detector(12) detects a bias current provided to the power amplifier. The current detector includes an operational amplifier connected to both ends of detection resistance. A current controller(13) controls a size of a bias current provided to the power amplifier according to the size of the bias current. The current controller outputs a comparison result by comparing outputs from the current detector with a bias current control signal inputted from the outside. A voltage regulator(14) provides the bias voltage to the power amplifier.

Description

Power amplification device {POWER AMPLIFYING APPARATUS}

The present invention relates to a power amplification device for amplifying a low power signal into a high power signal.

In general, a power amplifier is a circuit that amplifies a high power signal from a low power signal of a predetermined frequency by using a nonlinear active element.

Such a power amplifier properly controls the bias voltage and bias current applied to the power amplifier according to the output level in order to obtain maximum efficiency at any output power.

Typically, a low-dropout (LDO) regulator, which is a linear regulator, is mainly used for controlling the bias voltage.

Also, in general, for controlling the bias current, a scheme of configuring a separate circuit for generating a reference current that can reflect the magnitude of the bias current provided to the power amplifier is used. This conventional bias current control technique compares the reference current reflecting the bias current with a control voltage input for external current control and controls the magnitude of the bias current according to the result.

In this conventional bias current control technique, since a separate circuit for generating a reference current has to be provided, process deviation may occur during circuit manufacturing or malfunction may occur during operation.

Accordingly, there is a need in the art for a bias current control technique of a power amplifier capable of detecting a bias current directly on a path where a bias current is provided to the power amplifier and controlling the bias current accordingly.

An object of the present invention is to provide a power amplifier capable of directly detecting a bias current on a path where a bias current is provided to a power amplifier and controlling the bias current accordingly.

According to an aspect of the present invention,

A power amplifier receiving a bias current;

A current detector having a detection resistor connected to pass the bias current through a path through which the bias current is provided, and a first operational amplifier configured to output a result of comparing a voltage between both ends of the detection resistor; And

A current controller having a second operational amplifier for outputting a result of comparing the output of the first operational amplifier with the current control signal,

According to the output of the second operational amplifier provides a power amplification device characterized in that the magnitude of the bias current is controlled.

In one embodiment of the invention, the power amplifier may include a MOSFET to receive the bias current to the drain of the MOSFET.

In this embodiment, the output of the current controller can be provided to the gate of the MOSFET.

An embodiment of the present invention may further include a voltage regulator unit for receiving a power and outputting a constant voltage, and the output voltage of the voltage regulator may be provided as a bias voltage of the power amplifier.

In this embodiment, the output voltage of the voltage regulator portion can be applied to one end of the detection resistor.

Further, in this embodiment, the voltage regulator part may be a low voltage drop regulator.

As another means for solving the above technical problem, the present invention,

A power amplifier comprising a MOSFET receiving a bias current as a drain;

A current detector connected between a power supply and a drain of the MOSFET and having a first operational amplifier configured to compare and output a voltage across the detection resistor and a voltage across the detection resistor; And

A current controller having a second operational amplifier receiving the output of the first operational amplifier and a current control signal and providing a comparison result to the gate of the MOSFET

It provides a power amplification apparatus comprising a.

According to the present invention, it is possible to simplify the circuit of the power amplification device, thereby eliminating a problem due to process variation or a circuit malfunction.

In addition, according to the present invention, since power consumption for generating a reference current can be eliminated, the battery life of the device to which the power amplification device is applied can be extended.

1 is a circuit diagram showing a power amplifier according to an embodiment of the present invention.

Various embodiments of the present invention will now be described in detail with reference to the accompanying drawings. However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to more fully describe the present invention to those skilled in the art. Accordingly, it should be noted that the shapes, sizes, etc. of the components shown in the drawings may be exaggerated for clarity.

1 is a circuit diagram showing a power amplifier according to an embodiment of the present invention.

As shown in FIG. 1, a power amplifier according to an embodiment of the present invention includes a power amplifier 11, a current detector 12 for detecting a bias current provided to a power amplifier, and a detected bias current. It may be configured to include a current control unit 13 for controlling the magnitude of the bias current provided to the power amplifier 11 according to the size. In addition, one embodiment of the present invention may further include a voltage regulator 14 for providing a bias voltage of the power amplifier 11.

The power amplifier 11 may amplify the power of the input high frequency signal RFin to output a high power output high frequency signal RFout.

The power amplifier 11 may include a MOSFET (M1). FIG. 1 shows the most simplified power amplifier, a structure including a MOSFET M1 having a gate to which an input high frequency signal RFin is input, a drain for outputting an output high frequency signal RFout, and a grounded source. The power amplifier can be configured.

A bias current Ia and a bias voltage Va may be provided to the drain of the MOSFET M1 of the power amplifier 11.

By controlling the gate voltage of the MOSFET M1 in the power amplifier 11 of this structure, the magnitude of the current flowing from the drain to the source of the MOSFET M1 can be controlled. That is, the magnitude of the bias current (the current flowing from the drain of the MOSFET M1 to the source) of the power amplifier 11 can be adjusted by adjusting the gate voltage of the MOSFET M1.

The current detector 12 may be connected on a path through which the bias current Ia of the power amplifier 11 is provided to directly detect the bias current Ia.

In order to detect the magnitude of the bias current Ia without an additional circuit on the path where the bias current Ia is provided, the current detector 12 passes the detection resistor Rd so that the bias current passes through the bias current Ia. Connect on the provided path. As the bias current Ia passes through the detection resistor Rd, a voltage drop due to the detection resistor Rd occurs. That is, the voltage difference between the both ends of the detection resistor Rd due to the bias current Ia may be a parameter proportional to the magnitude of the bias current Ia.

Since the detection resistor Rd is provided on a path where the bias current Ia is provided, the detection resistor Rd may affect the bias voltage Va of the power amplifier 11. Therefore, it is preferable that the detection resistor Rd has a very small resistance value of several mV to several tens mV.

The current detector 12 includes an operational amplifier OP1 connected to two input terminals at both ends of the detection resistor Rd. The operational amplifier OP1 has an output corresponding to the voltage difference across the detection resistor Rd.

The current controller 13 compares the output of the current detector 12 with the bias current control signal Vctrl1 input from the outside and outputs the result.

The current controller 13 may be implemented as an operational amplifier OP2 having two input terminals respectively receiving the output of the current detector 12 and the bias current control signal Vctrl1 input from the outside.

The operational amplifier OP2 inputs a difference between the output of the current detector 12 and the bias current control signal Vctrl1 input from the outside to the gate of the MOSFET M1 of the power amplifier 11.

The gate of the MOSFET M1 of the power amplifier 11 is applied with a voltage corresponding to the difference between the output of the current detector 12 and the bias current control signal Vctrl1 input from the outside, and thus the drain-source current. To form. That is, the magnitude of the bias current may be controlled until the bias current provided to the power amplifier 11 becomes substantially the same value as the bias current control signal Vctrl1 received from the outside.

One embodiment of the present invention may further include a voltage regulator unit 14 for controlling the bias voltage of the power amplifier 11. The voltage regulator 14 receives a power supply and outputs a voltage Vr that is kept constant.

The voltage regulator 14 may compare the bias voltage control signal Vctrl2 input from the outside with a voltage value corresponding to its output voltage Vr and adjust the magnitude of the output voltage Vr to compensate for the difference. have.

The output voltage Vr adjusted and output by the voltage regulator 14 may be connected to one end of the power supply side of the detection resistor Rd to be used as a bias voltage of the power amplifier 11.

As the voltage regulator unit 14, a low-drop regulator (LDO) regulator may be employed. The voltage regulator section 14 to which the low voltage drop regulator is applied includes a MOSFET M2 having a source connected to a power supply, and a voltage divider R1 and R2 connected in series to the drain (output of the voltage regulator section 14) of the MOSFET M2. ) And an operational amplifier OP3 for comparing the voltage divided by the voltage divider resistors R1 and R2 with a bias voltage control signal Vctrl2 input from the outside and providing the result to the gate of the MOSFET M2. It may include.

As described above, the present invention can perform the detection of the bias current directly on the path through which the bias current is provided to the power amplifier, so there is no need to additionally provide a separate reference circuit for current detection. As a result, the circuit of the power amplification device can be simplified, thereby eliminating a problem due to process variation or a circuit malfunction. In addition, the present invention can further extend the battery life of the device to which the power amplification device is applied since no additional power consumption is generated to generate the reference current.

In the detailed description of the present invention, specific embodiments have been described, but various modifications may be made without departing from the scope of the present invention. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the following claims and their equivalents.

11: power amplifier 12: current detector
13: current controller 14: voltage regulator unit

Claims (9)

A power amplifier receiving a bias current;
A current detector having a detection resistor connected to pass the bias current through a path through which the bias current is provided, and a first operational amplifier configured to output a result of comparing a voltage between both ends of the detection resistor; And
A current controller having a second operational amplifier for outputting a result of comparing the output of the first operational amplifier with the current control signal,
And the magnitude of the bias current is controlled according to the output of the second operational amplifier.
The method of claim 1,
And the power amplifier includes a MOSFET to receive the bias current to the drain of the MOSFET.
The method of claim 2,
And the output of the current controller is provided to the gate of the MOSFET.
The method of claim 1,
And a voltage regulator configured to receive a power and output a constant voltage, wherein the output voltage of the voltage regulator is provided as a bias voltage of the power amplifier.
The method of claim 4, wherein
And the output voltage of the voltage regulator part is applied to one end of the detection resistor.
The method according to claim 4 or 5,
And the voltage regulator unit is a low voltage drop regulator.
A power amplifier comprising a MOSFET receiving a bias current as a drain;
A current detector connected between a power supply and a drain of the MOSFET and having a first operational amplifier configured to compare and output a voltage across the detection resistor and a voltage across the detection resistor; And
A current controller having a second operational amplifier receiving the output of the first operational amplifier and a current control signal and providing a comparison result to the gate of the MOSFET
Power amplification device comprising a.
The method of claim 7, wherein
And a voltage regulator configured to receive the power and output a constant voltage, wherein the output voltage of the voltage regulator is applied to one end of the power supply side of the detection resistor.
The method of claim 8,
And the voltage regulator unit is a low voltage drop regulator.
KR1020100129043A 2010-12-16 2010-12-16 Power amplifying apparatus KR20120067567A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100129043A KR20120067567A (en) 2010-12-16 2010-12-16 Power amplifying apparatus

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Application Number Priority Date Filing Date Title
KR1020100129043A KR20120067567A (en) 2010-12-16 2010-12-16 Power amplifying apparatus

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KR20120067567A true KR20120067567A (en) 2012-06-26

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150114201A (en) * 2014-04-01 2015-10-12 삼성전기주식회사 Power amplifying apparatus
KR102455805B1 (en) 2022-04-28 2022-10-18 정현인 Pentile method stereoscopic display and system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150114201A (en) * 2014-04-01 2015-10-12 삼성전기주식회사 Power amplifying apparatus
KR102455805B1 (en) 2022-04-28 2022-10-18 정현인 Pentile method stereoscopic display and system

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