KR20120054184A - In-plane switching mode liquid crystal display device having touch sensing function - Google Patents

In-plane switching mode liquid crystal display device having touch sensing function Download PDF

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KR20120054184A
KR20120054184A KR1020100115436A KR20100115436A KR20120054184A KR 20120054184 A KR20120054184 A KR 20120054184A KR 1020100115436 A KR1020100115436 A KR 1020100115436A KR 20100115436 A KR20100115436 A KR 20100115436A KR 20120054184 A KR20120054184 A KR 20120054184A
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liquid crystal
crystal display
black matrix
display device
substrate
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KR101715948B1 (en
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김성희
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엘지디스플레이 주식회사
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display

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  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Geometry (AREA)
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Abstract

PURPOSE: A lane switching mode liquid crystal display device with a touch sensing function is provided to have a black matrix with a high resistance, thereby performing a touch operation without a rear electrode. CONSTITUTION: A common electrode and a pixel electrode are formed on a first substrate(101). A second substrate(171) faces the first substrate. A color filter layer and a black matrix are formed on the second substrate. A liquid crystal layer is formed between the first and second substrates. The black matrix comprises a resistant component.

Description

터치 인식 횡전계형 액정표시장치{In-Plane Switching mode Liquid Crystal Display device having Touch sensing function}In-Plane Switching mode Liquid Crystal Display device having Touch sensing function}

본 발명은 액정표시장치에 관한 것으로, 특히 터치 인식이 가능한 횡전계형 액정표시장치에 관한 것이다. The present invention relates to a liquid crystal display device, and more particularly, to a transverse electric field type liquid crystal display device capable of touch recognition.

최근에 액정표시장치는 소비전력이 낮고, 휴대성이 양호한 기술 집약적이며, 부가가치가 높은 차세대 첨단 디스플레이(Display) 소자로 각광받고 있다. Recently, the liquid crystal display device has been spotlighted as a next generation advanced display device having low power consumption, good portability, high technology value, and high added value.

일반적으로, 액정표시장치는 액정의 광학적 이방성과 분극 성질을 이용하여 구동된다. 상기 액정은 구조가 가늘고 길기 때문에 분자의 배열에 방향성을 가지고 있으며, 인위적으로 액정에 전기장을 인가하여 분자배열의 방향을 제어할 수 있다. In general, the liquid crystal display device is driven by using the optical anisotropy and polarization properties of the liquid crystal. Since the liquid crystal has a long structure, it has a directionality in the arrangement of molecules, and the direction of the molecular arrangement can be controlled by artificially applying an electric field to the liquid crystal.

따라서, 상기 액정의 분자배열 방향을 임의로 조절하면, 액정의 분자배열이 변하게 되고, 광학적 이방성에 의해 상기 액정의 분자배열 방향으로 빛이 굴절하여 화상정보를 표현할 수 있다. Therefore, when the molecular alignment direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and light is refracted in the molecular alignment direction of the liquid crystal by optical anisotropy, so that image information can be expressed.

현재에는 박막트랜지스터와 상기 박막트랜지스터에 연결된 화소전극이 행렬 방식으로 배열된 능동행렬 액정표시장치(AM-LCD:Active Matrix LCD 이하, 액정표시장치라 함)가 해상도 및 동영상 구현능력이 우수하여 가장 주목받고 있다. Currently, an active matrix liquid crystal display device (AM-LCD: liquid crystal display device), in which a thin film transistor and pixel electrodes connected to the thin film transistor are arranged in a matrix manner, has the highest resolution and moving picture performance. I am getting it.

상기 액정표시장치는 공통전극이 형성된 컬러필터 기판과 화소전극이 형성된 어레이 기판과, 상기 두 기판 사이에 개재된 액정층으로 이루어지는데, 이러한 액정표시장치에서는 공통전극과 화소전극이 상하로 걸리는 전기장에 의해 액정을 구동하는 방식으로 투과율과 개구율 등의 특성이 우수하다. The liquid crystal display includes a color filter substrate on which a common electrode is formed, an array substrate on which pixel electrodes are formed, and a liquid crystal layer interposed between the two substrates. By the method of driving a liquid crystal, it is excellent in characteristics, such as transmittance | permeability and aperture ratio.

그러나, 상하로 걸리는 전기장에 의한 액정구동은 시야각 특성이 우수하지 못한 단점을 가지고 있다. 따라서, 상기의 단점을 극복하기 위해 시야각 특성이 우수한 횡전계형 액정표시장치가 제안되었다. However, the liquid crystal drive due to the electric field applied up and down has a disadvantage that the viewing angle characteristics are not excellent. Accordingly, a transverse field type liquid crystal display device having excellent viewing angle characteristics has been proposed to overcome the above disadvantages.

이하, 도 1을 참조하여 일반적인 횡전계형 액정표시장치에 관하여 상세히 설명한다. Hereinafter, a general transverse electric field type liquid crystal display device will be described in detail with reference to FIG. 1.

도 1은 일반적인 횡전계형 액정표시장치의 단면을 도시한 도면이다. 1 is a cross-sectional view of a general transverse electric field type liquid crystal display device.

도시한 바와 같이, 컬러필터 기판인 상부 기판(9)과 어레이 기판인 하부 기판(10)이 서로 이격되어 대향하고 있으며, 이 상부 및 하부 기판(9, 10)사이에는 액정층(11)이 개재되어 있다. As shown, the upper substrate 9, which is a color filter substrate, and the lower substrate 10, which is an array substrate, are spaced apart from each other, and the liquid crystal layer 11 is interposed between the upper and lower substrates 9, 10. It is.

상기 하부 기판(10) 상에는 공통전극(17)과 화소전극(30)이 동일 평면상에 형성되어 있으며, 이때, 상기 액정층(11)은 상기 공통전극(17)과 화소전극(30)에 의한 수평전계(L)에 의해 작동된다. The common electrode 17 and the pixel electrode 30 are formed on the same plane on the lower substrate 10. In this case, the liquid crystal layer 11 is formed by the common electrode 17 and the pixel electrode 30. It is operated by the horizontal electric field (L).

도 2a와 도 2b는 일반적인 횡전계형 액정표시장치의 온(on), 오프(off) 상태의 동작을 각각 도시한 단면도이다.2A and 2B are cross-sectional views illustrating operations of on and off states of a general transverse electric field type liquid crystal display device, respectively.

우선, 전압이 인가된 온(on) 상태에서의 액정의 배열상태를 도시한 도 2a를 참조하면, 상기 공통전극(17) 및 화소전극(30)과 대응하는 위치의 액정(11a)의 상변이는 없지만 공통전극(17)과 화소전극(30) 사이 구간에 위치한 액정(11b)은 이 공통전극(17)과 화소전극(30) 사이에 전압이 인가됨으로써 형성되는 수평전계(L)에 의하여, 상기 수평전계(L)와 같은 방향으로 배열하게 된다. First, referring to FIG. 2A, which illustrates an arrangement of liquid crystals in an on state where a voltage is applied, a phase change of a liquid crystal 11a at a position corresponding to the common electrode 17 and the pixel electrode 30 is performed. Although the liquid crystal 11b positioned in the section between the common electrode 17 and the pixel electrode 30 is formed by a horizontal electric field L formed by applying a voltage between the common electrode 17 and the pixel electrode 30, It is arranged in the same direction as the horizontal electric field (L).

즉, 상기 횡전계형 액정표시장치는 액정이 수평전계에 의해 이동하므로, 시야각이 넓어지는 특성을 띠게 된다. That is, in the transverse electric field type liquid crystal display device, since the liquid crystal moves by the horizontal electric field, the viewing angle is widened.

그러므로, 상기 횡전계형 액정표시장치를 정면에서 보았을 때, 상/하/좌/우 방향으로 약 80 ~ 85°방향에서도 반전 현상 없이 가시 할 수 있다. Therefore, when the transverse electric field type liquid crystal display device is viewed from the front, it can be seen in the up / down / left / right directions without inversion phenomenon even in about 80 to 85 ° direction.

다음, 도 2b를 참조하면, 상기 액정표시장치에 전압이 인가되지 않은 오프(off) 상태이므로 상기 공통전극과 화소전극 간에 수평전계가 형성되지 않으므로 액정층(11)의 배열 상태가 변하지 않는다.Next, referring to FIG. 2B, since no voltage is applied to the liquid crystal display, a horizontal electric field is not formed between the common electrode and the pixel electrode, so that the arrangement state of the liquid crystal layer 11 does not change.

한편, 이러한 횡전계형 액정표시장치는 특히 컬러필터 기판에 금속물질로 이루어진 공통전극이 형성되지 않는 구성을 가지므로 제조 공정 특히 모듈 공정 진행시 정전기에 의한 문제를 제거하고 정전기로 인한 화질 이상을 방지하기 위해 상기 컬러필터 기판의 배면에 투명 도전성 물질인 인듐-틴-옥사이드(ITO) 또는 인듐-징크-옥사이드(IZO)로서 배면전극을 형성하고 있다. On the other hand, such a transverse field type liquid crystal display device has a configuration in which a common electrode made of a metal material is not formed on the color filter substrate, in particular, to eliminate problems caused by static electricity during the manufacturing process, in particular, a module process, and to prevent abnormalities in image quality due to static electricity. The back electrode is formed on the back of the color filter substrate as indium tin oxide (ITO) or indium zinc oxide (IZO).

이러한 투명도전성 물질로 이루어진 배면 전극은 그 두 께가 200Å인 경우 면저항이 500Ω/sq정도가 되며, 이러한 면저항 치는 거의 금속물질로 이루어진 금속층 수준이 됨으로써 이러한 배면전극을 통해 제조 공정 중 발생하는 정전기를 외부로 방출시키는 역할을 함으로써 정전기로 인해 발생하는 문제를 방지하고 있다. When the thickness of the back electrode made of such a transparent conductive material is 200Ω, the sheet resistance is about 500Ω / sq, and the sheet resistance is almost the level of a metal layer made of a metallic material, thereby preventing static electricity generated during the manufacturing process through the back electrode. By dissipating as a means to prevent the problems caused by static electricity.

전술한 구성을 갖는 횡전계형 액정표시장치는 TV, 프로젝터, 휴대폰, PDA 등 다양한 응용제품에 이용되고 있다. The transverse electric field type liquid crystal display device having the above-described configuration is used for various applications such as a TV, a projector, a mobile phone, a PDA, and the like.

한편, 근래에 들어서는 개인 휴대가 가능한 휴대폰, PDA 또는 노트북 등에서 터치 센서가 내장되어 화면을 터치하여 동작할 수 있는 기능을 갖는 제품이 출시되어 사용자의 많은 괌심을 끌고 있다. On the other hand, in recent years, a mobile phone, PDA or laptop that can be carried personally has a built-in touch sensor has a function that can operate by touching the screen has attracted a lot of guam.

이러한 추세에 편승하여 다양한 응용제품에 표시소자로서 이용되고 있는 횡전계형 액정표시장치에 있어서도 터치 기능을 갖도록 하기 위해 최근 다양한 시도가 진행되고 있다. Along with this trend, various attempts have recently been made to have a touch function in a transverse electric field type liquid crystal display device which is used as a display element in various applications.

하지만, 전술한 바와 같이 컬러필터 기판의 배면에 도전성 물질로 배면 전극이 형성된 횡전계 액정표시장치는 그 내부에 인셀 형승을 정전용량 변화 인식 방식의 터치 센서가 구비된다 하더라도 상기 배면 전극에 의해 터치에 의해 발생하는 정전용량 변화를 감지할 수 없게 되어 터치 센서가 작동하지 않는 문제가 발생하고 있다 However, as described above, a transverse electric field liquid crystal display device having a back electrode formed of a conductive material on a rear surface of a color filter substrate may be touched by the back electrode even when an in-cell shape is provided with a touch sensor of a capacitance change recognition method therein. The touch sensor does not work because the change in capacitance caused by the touch sensor cannot be detected.

즉, 상기 컬러필터 기판의 배면 전면에 투명 도전성 물질로 이루어진 배면 전극에 의해 사용자의 손가락이 접촉하는 경우, 상기 손가락의 접촉면적에 발생하는 정전용량은 상기 손가락과 상기 배면 전극 사이에 발생하게 되며, 이러한 정전용량은 정전기 처리를 위해 형성된 상기 배면 전극을 통해 외부로 방전되므로 실질적으로 상기 컬러필터 기판과 어레이 기판 사이에 구현된 인셀 타입 터치센서가 작업자의 터치를 인식하지 못하게 되는 것이다. That is, when the user's finger is contacted by the back electrode made of a transparent conductive material on the front surface of the color filter substrate, the capacitance generated in the contact area of the finger is generated between the finger and the back electrode, Since the capacitance is discharged to the outside through the back electrode formed for the electrostatic treatment, the in-cell type touch sensor implemented between the color filter substrate and the array substrate substantially does not recognize the operator's touch.

이러한 문제를 해결하기 위해 상기 투명 도전성 물질로 이루어진 배면 전극을 삭제하게 되면 제조 공정 중 정전기 발생으로 인해 불량률이 상승하며 표시품질이 저하되고 있는 실정이다. In order to solve this problem, if the back electrode made of the transparent conductive material is deleted, the defective rate increases due to the generation of static electricity during the manufacturing process, and the display quality is deteriorated.

본 발명은 고저항 특성을 갖는 블랙 매트릭스를 구비하여 배면 전극 없이 터치 동작을 수행하고 외부로부터 발생되는 정전기가 유입되는 것을 방지할 수 있는 터치인식 횡전계형 액정표시장치를 제공함에 그 목적이 있다. SUMMARY OF THE INVENTION An object of the present invention is to provide a touch recognition transverse electric field type liquid crystal display device having a black matrix having a high resistance characteristic and performing a touch operation without a back electrode and preventing static electricity generated from the outside.

본 발명의 실시예에 따른 터치인식 횡전계형 액정표시장치는 전계를 생성하는 공통전극과 화소전극이 형성된 제1 기판과, 상기 제1 기판과 마주보며 컬러필터층 및 블랙 매트릭스가 형성된 제2 기판 및 상기 제1 및 제2 기판 사이에 형성된 액정층을 포함하고, 상기 블랙 매트릭스는 저항 성분을 포함한다.According to an embodiment of the present invention, there is provided a touch-sensitive transverse electric field type liquid crystal display device comprising: a first substrate having a common electrode and a pixel electrode generating an electric field; a second substrate facing the first substrate; And a liquid crystal layer formed between the first and second substrates, wherein the black matrix includes a resistive component.

본 발명의 실시예에 따른 터치인식 횡전계형 액정표시장치는 상부 기판 상에 위치하는 블랙 매트릭스를 고저항 특성을 갖도록 설계함으로써 상부 기판과 상부 편광판 사이에 위치하는 배면 전극층을 제거하여도 터치 동작을 수행할 수 있으며 외부로부터 발생되는 정전기가 유입되는 것을 방지할 수 있다. In the touch recognition transverse electric field type liquid crystal display according to the exemplary embodiment of the present invention, the black matrix disposed on the upper substrate has a high resistance characteristic, thereby performing a touch operation even when the back electrode layer disposed between the upper substrate and the upper polarizer is removed. It is possible to prevent the inflow of static electricity generated from the outside.

도 1은 일반적인 횡전계형 액정표시장치의 일부를 개략적으로 도시한 단면도이다.
도 2a, 2b는 일반적인 횡전계형 액정표시장치의 온(on), 오프(off) 상태의 동작을 각각 도기한 단면도이다.
도 3은 본 발명의 실시예에 따른 터치인식 횡전계형 액정표시장치의 표시영역 내의 하나의 화소영역에 대한 단면도이다.
도 4는 도 3의 터치인식 횡전계형 액정표시장치의 일부분을 나타낸 도면이다. 1 is a cross-sectional view schematically illustrating a part of a general transverse electric field type liquid crystal display device.
2A and 2B are cross-sectional views illustrating operations of on and off states of a general transverse electric field type liquid crystal display device, respectively.
3 is a cross-sectional view of one pixel area in a display area of a touch recognition transverse electric field type liquid crystal display device according to an exemplary embodiment of the present invention.
FIG. 4 is a view illustrating a part of the touch recognition transverse electric field type liquid crystal display of FIG. 3.

이하, 첨부된 도면을 참조하여 본 발명에 따른 실시예를 설명하기로 한다. Hereinafter, embodiments according to the present invention will be described with reference to the accompanying drawings.

도 3은 본 발명의 실시예에 따른 터치인식 횡전계형 액정표시장치의 표시영역 내의 하나의 화소영역에 대한 단면도이다. 3 is a cross-sectional view of one pixel area in a display area of a touch recognition transverse electric field type liquid crystal display device according to an exemplary embodiment of the present invention.

도 3에 도시된 바와 같이, 본 발명의 실시예에 따른 터치인식 횡전계형 액정표시장치는 우선, 투명한 제1 절연기판(101) 상에 각 화소영역(P)에는 순수 폴리실리콘으로 이루어지며 그 중앙부는 채널을 이루는 제1 반도체영역(113a) 그리고, 상기 제1 반도체 영역(113a) 양측면으로 고농도의 불순물이 도핑된 제2 반도체 영역(113b)으로 구성된 반도체층(113)이 형성되어 있다. As shown in FIG. 3, the touch-sensitive transverse electric field type liquid crystal display device according to the exemplary embodiment of the present invention is formed of pure polysilicon in each pixel region P on a transparent first insulating substrate 101. The semiconductor layer 113 including the first semiconductor region 113a constituting the channel and the second semiconductor region 113b doped with a high concentration of impurities is formed on both sides of the first semiconductor region 113a.

또한, 상기 반도체층(113)을 덮으며 전면에 게이트 절연막(116)이 형성되어 있으며, 상기 게이트 절연막(116) 위로는 상기 반도체층(113)의 제1 반도체 영역(113a)에 대응하여 게이트 전극(120)이 형성되어 있다. In addition, a gate insulating layer 116 is formed on the entire surface of the semiconductor layer 113, and a gate electrode is formed on the gate insulating layer 116 to correspond to the first semiconductor region 113a of the semiconductor layer 113. 120 is formed.

또한, 상기 게이트 절연막(116) 위로는 상기 게이트 전극(120)과 연결되며 일방향으로 연장된 게이트 라인(도시하지 않음)이 형성되어 있으며, 상기 게이트 전극(120)과 게이트 라인 위로 전면에 무기 절연물질 예를 들면 산화 실리콘(SiO2) 또는 질화실리콘(SiNx)으로 이루어진 층간 절연막(123)이 형성되어 있다. In addition, a gate line (not shown) connected to the gate electrode 120 and extending in one direction is formed on the gate insulating layer 116, and an inorganic insulating material on the entire surface of the gate electrode 120 and the gate line. For example, an interlayer insulating film 123 made of silicon oxide (SiO 2) or silicon nitride (SiN x) is formed.

이때, 상기 층간 절연막(123)과 그 하부에 위치하는 게이트 절연막(116)에는 상기 제1 반도체영역(113a) 양측에 각각 위치한 제2 반도체 영역(113b) 각각을 노출시키는 반도체층 콘택홀(125)이 구비되고 있다.In this case, a semiconductor layer contact hole 125 exposing each of the second semiconductor regions 113b positioned on both sides of the first semiconductor region 113a may be formed in the interlayer insulating layer 123 and the gate insulating layer 116 disposed below the interlayer insulating layer 123. Is provided.

다음, 상기 반도체층 콘택홀(125)을 구비한 상기 층간 절연막(123) 상부에는 상기 게이트라인과 교차하여 화소영역(P)을 정의하는 데이터라인(130)이 형성되어 있다. Next, a data line 130 is formed on the interlayer insulating layer 123 including the semiconductor layer contact hole 125 to define the pixel region P by crossing the gate line.

또한, 상기 층간 절연막(123) 위로 소자영역(TrA)에는 상기 반도체층 콘택홀(125)을 통해 노출된 상기 제2 반도체영역(113b)과 각각 접촉하며 서로 이격하는 소스 및 드레인 전극(133, 136)이 형성되어 있다. 이때, 상기 소자영역(TrA)에 순차 적층된 상기 반도체층(113)과 게이트 절연막(116)과 게이트 전극(120)과 층간 절연막(123)과 소스 및 드레인 전극(133, 136)은 스위칭소자인 박막트랜지스터(Tr)를 이룬다. In addition, the source and drain electrodes 133 and 136 which contact the second semiconductor region 113b exposed through the semiconductor layer contact hole 125 and are spaced apart from each other in the device region TrA on the interlayer insulating layer 123. ) Is formed. In this case, the semiconductor layer 113, the gate insulating layer 116, the gate electrode 120, the interlayer insulating layer 123, and the source and drain electrodes 133 and 136 sequentially stacked on the device region TrA may be switching devices. A thin film transistor (Tr) is formed.

이때, 상기 박막트랜지스터(Tr)는 상기 게이트라인(도시하지 않음) 및 데이터라인(130)과 전기적으로 연결되도록 형성된다. In this case, the thin film transistor Tr is formed to be electrically connected to the gate line (not shown) and the data line 130.

한편, 본 발명의 실시예에 있어서는 일례로 폴리실리콘의 반도체층(113)이 구비되어 그 상부에 게이트 전극(120)이 위치한 탑 게이트 타입의 박막트랜지스터(Tr)가 형성되고 있는 것으로 보이고 있지만, 이러한 구조를 갖는 박막트랜지스터(Tr)를 대신하여 비정질 실리콘의 액티브층과 이의 상부에서 불순물 비정질 실리콘으로 이루어지며 서로 이격하는 형태의 오믹콘택층으로 이루어진 반도체층을 구비하며 상기 반도체층 하부에 게이트 전극이 위치한 바텀 게이트 타입의 박막트랜지스터가 형성될 수도 있으며, 이들 이외에 다양한 형태로 변형된 박막트랜지스터가 구비될 수도 있음은 자명하다.On the other hand, in the exemplary embodiment of the present invention, for example, a semiconductor layer 113 of polysilicon is provided, and it is shown that a top gate type thin film transistor Tr having a gate electrode 120 positioned thereon is formed. Instead of the thin film transistor Tr having a structure, the semiconductor layer is formed of an active layer of amorphous silicon and an ohmic contact layer formed of impurity amorphous silicon and spaced apart from each other, and a gate electrode is disposed below the semiconductor layer. It is apparent that a bottom gate type thin film transistor may be formed and a thin film transistor modified in various forms may be provided.

다음, 상기 데이터라인(130)과 소스 및 드레인 전극(133, 136) 상부에는 무기 절연물질 예를 들면 산화 실리콘(SiO2) 또는 질화 실리콘(SiNx)로서 제1 보호층(140)이 형성된다. 이때, 상기 제1 보호층(140)은 그 상부에 형성된 유기절연물질로 이루어진 제2 보호층(145)과 상기 금속물질로 이루어진 상기 데이터 배선(130)과 소스 및 드레인 전극(133, 136) 간의 접합 특성을 향상시키기 위함이다. Next, a first passivation layer 140 is formed on the data line 130 and the source and drain electrodes 133 and 136 as an inorganic insulating material, for example, silicon oxide (SiO 2) or silicon nitride (SiN x). In this case, the first passivation layer 140 is formed between the second passivation layer 145 made of an organic insulating material formed thereon and the data line 130 made of the metal material and the source and drain electrodes 133 and 136. This is to improve the bonding characteristics.

금속물질과 유기절연물질간의 접합력은 금속물질과 무기절연물질간 및 무기절연물질과 유기절연물질간의 접합력보다 상대적으로 약하므로 이를 개선시키기 위해 무기절연물질로 이루어진 상기 제1 보호층(140)을 형성하는 것이다. 이러한 접합력 향상의 역할을 하는 상기 제1 보호층(140)은 생략될 수도 있다. Since the bonding force between the metal material and the organic insulating material is relatively weaker than the bonding force between the metal material and the inorganic insulating material and between the inorganic insulating material and the organic insulating material, the first protective layer 140 made of the inorganic insulating material is formed to improve this. It is. The first protective layer 140 which serves to improve the bonding strength may be omitted.

다음, 상기 제1 보호층(140) 위로는 유기절연물질 예를 들면 포토아크릴(photo acryl) 또는 벤조사이클로부텐(BCB)으로서 이루어진 제2 보호층(145)이 형성된다. 이때, 상기 제2 보호층(145)은 하부에 위치하는 구성요소간의 단차 등이 극복될 수 있도록 2㎛ 내지 4㎛ 정도의 두꺼운 두께를 가져 평탄한 표면 상태를 이루는 것이 특징이다. Next, a second passivation layer 145 formed of an organic insulating material, for example, photo acryl or benzocyclobutene (BCB) is formed on the first passivation layer 140. At this time, the second protective layer 145 is characterized by having a flat surface state having a thick thickness of about 2㎛ to 4㎛ so that the step between the components located below can be overcome.

다음, 상기 제2 보호층(145) 위에는 투명 도전성 물질로서 각 터치 블록(TB, 표시영역 내에서 다수의 화소영역을 하나의 단위로 구성한 영역으로써 통상 사용자에 의해 손가락 등으로 터치되는 면적인 1㎟ 내지 10㎟ 정도의 크기를 갖는 영역) 별로 패터닝 된 형태로 공통전극(150)이 형성된다. Next, on the second protective layer 145, each touch block TB is a transparent conductive material, and a plurality of pixel areas are formed in one unit within a display area. To a region having a size of about 10 mm 2) to form a common electrode 150.

또한, 터치 블록(TB) 별로 패터닝되어 형성된 상기 공통전극(150) 위로 일부 게이트 라인과 중첩하는 x 센싱 배선(도시하지 않음)이 형성되고 있으며, 일부 데이터라인(130)과 중첩하는 y 센싱 배선(ysl)이 형성된다. In addition, x sensing wires (not shown) overlapping with some gate lines are formed on the common electrode 150 formed by patterning for each touch block TB, and y sensing wires overlapping with some data lines 130 are provided. ysl) is formed.

다음, 상기 공통전극(150)과, x/y 센싱 배선(미도시, ysl) 상부로 표시영역 전면에 무기절연물질 예를 들면 산화실리콘(SiO2) 또는 질화실리콘(SiNx)으로서 제3 보호층(155)이 형성된다. Next, a third protective layer (ie, an inorganic insulating material, for example, silicon oxide (SiO 2) or silicon nitride (SiN x), is formed on the entire surface of the common electrode 150 and the x / y sensing wiring (not shown, ysl). 155 is formed.

이때, 각 소자영역(TrA) 내의 드레인 전극(136)에 대응하는 부분의 상기 제1, 2, 3 보호층(140, 145, 155)은 각각 패터닝됨으로서 드레인 콘택홀(157)이 구비되고 있으며, 상기 각 터치 블록(TB) 내의 제1 및 제3 영역(도시하지 않음)에 구비된 상기 x 센싱 배선(xsl)에 대응하는 부분의 제3 보호층(155)은 패터닝되어 제4 콘택홀(159)이 구비되고 있다. In this case, the first, second, and third protective layers 140, 145, and 155 of portions corresponding to the drain electrode 136 in each device region TrA are patterned, respectively, so that the drain contact holes 157 are provided. The third protective layer 155 of the portion corresponding to the x sensing wiring xsl provided in the first and third regions (not shown) in each touch block TB is patterned to form a fourth contact hole 159. ) Is provided.

다음, 상기 제3 보호층(155) 위로는 각 화소영역(P) 내에 상기 드레인 콘택홀(157)을 통해 상기 드레인 전극(136)과 접촉하는 화소전극(160)이 형성됨으로서 어레이 기판이 완성되고 있다. 이때, 상기 화소전극(160)에는 다수의 바(bar) 형태의 개구(op)가 구비됨으로서 구동전압 인가 시 상기 공통전극(150)과 더불어 프린지 필드를 발생시키게 된다. Next, an array substrate is completed by forming a pixel electrode 160 in contact with the drain electrode 136 through the drain contact hole 157 in each pixel region P, above the third passivation layer 155. have. In this case, the pixel electrode 160 is provided with a plurality of bar-shaped openings (ops) to generate a fringe field together with the common electrode 150 when a driving voltage is applied.

상기 각 화소영역(P)에 구비된 상기 화소전극(160)과 상기 공통전극(150)은 상기 제3 보호층(155)을 개재하여 중첩하도록 형성되고 있으며, 중첩하는 상기 공통전극(150)과 제3 보호층(155)과 화소전극(160)은 스토리지 캐패시터를 이룬다. The pixel electrode 160 and the common electrode 150 provided in each pixel region P are formed to overlap each other through the third protective layer 155, and overlap the common electrode 150. The third passivation layer 155 and the pixel electrode 160 form a storage capacitor.

전술한 구성을 갖는 어레이 기판(101)과 마주하며, 투명한 제2 절연기판(171)이 구비되고 있다. A transparent second insulating substrate 171 is provided facing the array substrate 101 having the above-described configuration.

상기 제2 절연기판(171)의 내측면에는 각 화소영역(P)의 경계 및 상기 박막트랜지스터(Tr)에 대응하여 블랙 매트릭스(173)가 구비되고 있으며, 상기 블랙 매트릭스(173)와 중첩하며 상기 블랙 매트릭스(173)에 의해 포획된 영역에는 각 화소영역(P)에 순차 대응하는 형태로, 적, 녹, 청색 컬러필터 패턴(R, G, B)을 포함하는 컬러필터층(175)이 형성되어 있다. The inner surface of the second insulating substrate 171 is provided with a black matrix 173 corresponding to the boundary of each pixel region P and the thin film transistor Tr, and overlaps the black matrix 173. In the area captured by the black matrix 173, a color filter layer 175 including red, green, and blue color filter patterns R, G, and B is formed in a form corresponding to each pixel area P in order. have.

전술한 구성을 갖는 제1 절연기판(101)과 제2 절연기판(171) 사이에는 액정층(170)이 개재되고, 표시영역 외측의 비표시영역에 상기 표시영역을 테두리 하는 형태로 씰패턴이 됨으로써 본 발명에 따른 터치인식 횡전계형 액정표시장치(100)가 완성되고 있다.The liquid crystal layer 170 is interposed between the first insulating substrate 101 and the second insulating substrate 171 having the above-described configuration, and the seal pattern is formed in the form of bordering the display region on the non-display region outside the display region. By doing so, the touch-sensitive transverse electric field type liquid crystal display device 100 according to the present invention is completed.

이때, 상기 블랙 매트릭스(173)는 고저항 특성이 포함되도록 설계된다. 상기 블랙 매트릭스(173)는 빛을 차단하기 위해 검은색 계통의 안료가 첨가된 유기물질로 만들 수 있다. 여기서, 검은색 계통의 안료로는 카본 블랙이나 티타늄 옥사이드 등을 사용할 수 있다. 또한, 상기 블랙 매트릭스(173)는 카본 블랙과 같은 수지에 메탈을 혼용해서 사용될 수도 있다. In this case, the black matrix 173 is designed to include a high resistance characteristic. The black matrix 173 may be made of an organic material to which a black pigment is added to block light. Here, carbon black or titanium oxide may be used as the black pigment. In addition, the black matrix 173 may be used by mixing a metal in a resin such as carbon black.

상기 블랙 매트릭스(173)가 카본 블랙으로 형성될 경우 고저항 특성을 확보하기 위해 상기 카본 블랙에 RGB 안료를 혼합한 것을 사용한다. 상기 블랙 매트릭스(173)는 터치 기능에 영향을 주지 않을 정도의 높은 면저항 특성을 가져야 한다. When the black matrix 173 is formed of carbon black, a mixture of RGB pigments with the carbon black is used to secure high resistance characteristics. The black matrix 173 should have a high sheet resistance characteristic that does not affect the touch function.

한편, 본 발명에 따른 터치인식 횡전계 액정표시장치는 공정시 발생하는 정전기를 방지하기 위한 배면 전극이 제2 절연기판(171) 상에 구비되지 않는다. 종래의 배면 전극을 대신해서 고저항 특성을 갖는 블랙 매트릭스(173)는 공정시 발생하는 정전기를 방지하는 역할을 함과 동시에 빛을 차단하는 역할을 하게 된다. Meanwhile, in the touch recognition transverse electric field liquid crystal display according to the present invention, a back electrode for preventing static electricity generated during the process is not provided on the second insulating substrate 171. The black matrix 173 having a high resistance characteristic instead of the conventional back electrode serves to prevent static electricity generated during the process and to block light at the same time.

상기 블랙 매트릭스(173)는 메탈 블랙 매트릭스로도 형성될 수 있다. The black matrix 173 may also be formed of a metal black matrix.

상기 블랙 매트릭스(173)는 도 4에 도시된 바와 같이, 도전볼을 포함하는 실(200)과 전기적으로 접속되고, 상기 실(200)은 도시하지 않은 데이터 패드와 전기적으로 접속된다. 이로 인해, 공정 중에 발생된 정전기를 상기 블랙 매트릭스(173)를 통해 데이터 패드로 방전되게 된다. As illustrated in FIG. 4, the black matrix 173 is electrically connected to a chamber 200 including conductive balls, and the chamber 200 is electrically connected to a data pad (not shown). As a result, the static electricity generated during the process is discharged to the data pad through the black matrix 173.

상기 컬러필터층(175)이 형성된 제2 절연기판(171)은 컬러필터층(175)을 보호하고, 상기 컬러필터층(175)을 평탄화시키며 주로 아크릴계 에폭시 재료를 이용하여 형성된 오버 코트층(177)을 더 포함한다. The second insulating substrate 171 on which the color filter layer 175 is formed protects the color filter layer 175, planarizes the color filter layer 175, and further includes an overcoat layer 177 formed mainly using an acrylic epoxy material. Include.

이와 같이, 본 발명에 따른 터치인식 횡전계 액정표시장치는 제2 절연기판 상면에 배면 전극을 형성하지 않고 블랙 매트릭스(173) 상에 고저항 특성을 부가하여 공정 중에 발생하는 정전기를 방지할 수 있다. 또한, 배면 전극이 존재하지 않기 때문에 본 발명에 따른 터치인식 횡전계 액정표시장치는 종래 기술에 대비 터치인식율을 향상시킬 수 있다.As described above, the touch-sensitive transverse electric field liquid crystal display according to the present invention can prevent the static electricity generated during the process by adding a high resistance characteristic on the black matrix 173 without forming a back electrode on the upper surface of the second insulating substrate. . In addition, since there is no rear electrode, the touch recognition transverse electric field liquid crystal display according to the present invention can improve the touch recognition rate compared to the prior art.

100:횡전계형 액정표시장치 101:제1 절연기판
113:반도체층 113a:제1 반도체 영역
113b:제2 반도체 영역 116:게이트 절연막
123:층간 절연막 125:반도체층 콘택홀
130:데이터 배선 133:소스 전극
136:드레인 전극 140:제1 보호층
145:제2 보호층 150:공통전극
155:제3 보호층 160:화소전극
171:제2 절연기판 173:블랙 매트릭스
175:컬러필터층 177:오버코트층100: transverse electric field type liquid crystal display 101: first insulating substrate
113: semiconductor layer 113a: first semiconductor region
113b: second semiconductor region 116: gate insulating film
123: interlayer insulating film 125: semiconductor layer contact hole
130: data wiring 133: source electrode
136: drain electrode 140: first protective layer
145: second protective layer 150: common electrode
155: third protective layer 160: pixel electrode
171: second insulating substrate 173: black matrix
175: color filter layer 177: overcoat layer

Claims (5)

전계를 생성하는 공통전극과 화소전극이 형성된 제1 기판;
상기 제1 기판과 마주보며 컬러필터층 및 블랙 매트릭스가 형성된 제2 기판; 및
상기 제1 및 제2 기판 사이에 형성된 액정층;을 포함하고,
상기 블랙 매트릭스는 저항 성분을 포함하는 것을 특징으로 하는 터치인식 횡전계형 액정표시장치.A first substrate having a common electrode and a pixel electrode generating an electric field;
A second substrate facing the first substrate and having a color filter layer and a black matrix formed thereon; And
And a liquid crystal layer formed between the first and second substrates.
And the black matrix comprises a resistive component. 제1 항에 있어서,
상기 블랙 매트릭스는 카본 블랙에 RGB 안료를 혼합하여 저항 성분을 확보하는 것을 특징으로 하는 터치인식 횡전계형 액정표시장치.The method according to claim 1,
The black matrix is a touch-sensitive transverse electric field type liquid crystal display device, characterized in that to secure a resistance component by mixing the RGB pigment with carbon black. 제1 항에 있어서,
상기 블랙 매트릭스는 메탈 블랙 매트릭스를 포함하는 것을 특징으로 하는 터치인식 횡전계형 액정표시장치.The method according to claim 1,
The black matrix is a touch-sensitive transverse electric field type liquid crystal display device comprising a metal black matrix. 제1 항에 있어서,
상기 블랙 매트릭스는 상기 제1 및 제2 기판의 셀 갭을 유지하는 씰과 전기적으로 접속되는 것을 특징으로 하는 터치인식 횡전계형 액정표시장치.The method according to claim 1,
And the black matrix is electrically connected to a seal holding a cell gap of the first and second substrates. 제4 항에 있어서,
상기 제1 기판은 상기 씰에 포함된 도전볼과 전기적으로 접속된 데이터 패드를 더 포함하는 것을 특징으로 하는 터치인식 횡전계형 액정표시장치.The method of claim 4, wherein
And the first substrate further comprises a data pad electrically connected to a conductive ball included in the seal.
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