KR20110137331A - Deposition apparatus with high temperature rotatable target and method of operating thereof - Google Patents

Abstract

A deposition apparatus (100) and method are provided for sputtering material onto a substrate, comprising: a substrate holder (110) for holding the substrate; A rotatable target 120 configured to be sputtered; And a heating system including a back side heater (130) for heating the substrate from the back side and a front side heater for heating the substrate from the front side. The rotatable target serves as the front side heater, wherein the front side heater is configured to heat the substrate to a temperature of at least 100 ° C.

Description

DEPOSITION APPARATUS WITH HIGH TEMPERATURE ROTATABLE TARGET AND METHOD OF OPERATING THEREOF}

The present application generally relates to deposition apparatus and methods of operating the same. DETAILED DESCRIPTION The present disclosure relates to substrate coating technology solutions, including, but not limited to, semiconductor and dielectric materials and devices, including but not limited to equipment, processes and materials used for the deposition, patterning and processing of substrates and coatings, Flat panel displays (such as TFT), masks and filters, energy converters and storage (such as photocells, fuel cells and batteries), lighting using semiconductors (such as LEDs and OLEDs), magnetic and optical storage, and microelectromechanical systems ( MEMS) and nanoelectromechanical systems (NEMS), micro-optical and opto-electromechanical systems (NEMS), micro-optical and optoelectronic devices, transparent substrates, metallization systems for architectural and automotive glass, metal and polymer foils and packaging materials, and Micro and nano moldings. More specifically, the present invention relates to a sputter device having a rotatable target and a method of operating the same.

In many applications, there is a need to deposit thin films on substrates. As used herein, the term "substrate" includes both inflexible substrates such as, for example, wafers or glass plates, and flexible substrates such as webs and foils. In particular, techniques for depositing layers in evaporating and sputtering are known.

In the evaporation process, the material to be deposited is heated to evaporate to condense on the substrate. Sputtering is a vacuum coating process used to deposit thin films of various materials on the surface of a substrate. For example, sputtering can be used to deposit a metal layer, such as a ceramic or aluminum thin film. During the sputtering process, the coating material is transferred from the target made of the material to the substrate to be coated by bombarding the surface of the target with ions of an inert gas accelerated at high voltage. When the gas ions impinge on the outer surface of the target, their momentum is transferred to the atoms of the material so that some of them can get enough energy to overcome the binding energy and escape from the target surface and be deposited on the substrate. On it, they form a film of a certain material. The thickness of the deposited film depends in particular on the duration of exposure of the substrate to the sputtering process.

For example, sputtering is used in the manufacture of thin film solar cells. Generally, thin film solar cells include a back contact, an absorber layer, and a transparent conductive oxide layer (TCO). Typically, the back contact and the TCO layer are made by sputtering, while the absorber layer is generally made by a chemical vapor deposition process. Compared to evaporation processes such as chemical vapor deposition, sputtering is advantageous in that it can sputter even materials that are not evaporated. In addition, the adhesion of the resulting layer to the substrate is typically stronger in the sputtering process than in the evaporation process. In addition, because sputtering is a directional process, most of the material is transferred to the substrate and thus is not coated inside the deposition apparatus (as in the evaporation process).

Despite the advantages of sputtering, sputtering also has drawbacks. Compared to evaporation, sputtering the substrate takes longer. The sputtering rate is generally much slower than the evaporation rate. Therefore, there has been a continuous demand for speeding up the sputtering process.

On the other hand, although the adhesion of the sputtered layer to the substrate is better, there has been a continuing need to further improve the quality of the deposited layer.

In view of the above, a vapor deposition apparatus and method for depositing a layer on a substrate are provided.

According to one aspect, a deposition apparatus for sputtering a material on a substrate is provided, the substrate holder for holding the substrate, a rotatable target adapted to be sputtered, a backside heater for heating the substrate from the back side and heating the substrate from the front side. A heating system including a front side heater. The rotatable target serves as the front side heater and is adapted to heat the substrate to a temperature of at least 100 ° C.

According to another aspect, a method of depositing a layer of deposition material on a substrate in a deposition apparatus is provided, the method comprising: holding a substrate, rotating a rotatable target, sputtering material onto the substrate, and front surface of the substrate. Heating to a side heater to a temperature of at least 100 ° C., and using the rotatable target for heating the substrate from the front surface.

It should be understood that the description that the front side heater is employed to heat the substrate to a temperature of 100 ° C. is understood that the front side heater is employed to cause a temperature rise of the substrate to a temperature of 100 ° C.

According to another aspect, there is provided a deposition apparatus for sputtering a material on a substrate, the substrate holder for holding the substrate, a rotatable target adapted to be sputtered, a backside heater for heating the substrate from the back and a substrate heated from the front side. A heating system including a front side heater for The rotatable target serves as the front side heater and is employed to increase the temperature of the substrate by an increment of at least 100 ° C.

According to another aspect, a method of depositing a layer of deposition material on a substrate in a deposition apparatus is provided, the method comprising: holding a substrate, rotating a rotatable target, sputtering material on the substrate, temperature of the substrate Increasing by at least 100 ° C. to the front side heater, and using the rotatable target for heating the substrate from the front side.

According to embodiments, the front side heater is employed to heat the substrate to a temperature of at least 200 ° C, more preferably at least 300 ° C. According to embodiments, the front side heater is employed to increase the temperature of the substrate by an increment of at least 200 ° C, more preferably by an increment of at least 300 ° C.

Other aspects, details, advantages and features will become apparent from the dependent claims, the description of the invention and the accompanying drawings.

Embodiments also relate to an apparatus for performing each disclosed method and an apparatus portion for performing the steps of each disclosed method. The steps of the method may be performed in hardware components, in a computer program with appropriate software, in any combination of the two or in any other manner. Embodiments also relate to methods of operating the disclosed devices or methods of manufacturing the disclosed devices. This includes the steps of a method of performing a function of a device or manufacturing a part of the device.

Some of the foregoing matters identified in other specific aspects of the invention are set forth in the detailed description below, which is disclosed in part by reference to the accompanying drawings.
1 is a cross-sectional view schematically showing a deposition apparatus according to an embodiment disclosed herein,
2 is a schematic cross-sectional view of a rotatable target according to an embodiment disclosed herein;
3 is a cross-sectional view schematically showing a rotatable target according to an embodiment disclosed herein,
4 is a cross-sectional view schematically showing a deposition apparatus according to an embodiment disclosed herein,
5 is a time-temperature graph schematically illustrating the deposition process,
6 is a time-temperature graph schematically illustrating another deposition process,
7 is a time-temperature graph schematically illustrating another deposition process,
8 is a time-mass density graph illustrating the dependence of layer density on deposition temperature,
9 is a schematic cross-sectional view of a rotatable target according to an embodiment disclosed herein;
10 is a schematic cross-sectional view of a rotatable target according to an embodiment disclosed herein.

In the following detailed description with reference to the drawings, like reference numerals refer to like elements. In general, only the differences with respect to the individual examples have been described.

The process of coating a substrate with a material as disclosed herein typically involves thin film application. As used herein, the terms "coating" and "deposition" are used interchangeably.

The deposition apparatus includes a process source. In general, this is a rotatable target suitable for sputtering. As described in more detail below, the rotatable target may be a joined rotatable target or an unjoined rotatable target.

Generally, sputtering can be done as diode sputtering or magnetron sputtering. The magnetron sputtering is particularly advantageous because its deposition rate is quite high. Typically, a magnet is placed inside the rotatable target. By confining free electrons in a magnetic field generated just below the target surface, by arranging magnets or magnets behind the target, i.e., inside the target, in the case of a rotatable target, these electrons are forced to move into the magnetic field and are unable to escape. . This improves the ionization potential of gas molecules typically by several orders of magnitude. And this greatly increases the deposition rate.

When using a target for substrate front heating, it is generally controlled so that the temperature of the target is limited by the melting temperature of the target material. In addition, in the case of a target consisting of two or more pieces, as in the case of a target tube and a target backing tube, the temperature of the target is limited to account for the different coefficients of thermal expansion of the backing tube and the target. Should be. That is, the heating must be done so that the target consisting of many parts does not crack due to heating. Also, other conditions typically have to be taken into account so that the magnets do not exceed a predetermined temperature.

According to some embodiments, the heating of the front surface is effected by a plurality of rotatable targets. That is, the deposition apparatus includes at least two rotatable targets. The plurality of targets serve as substrate front heaters. In addition, according to some embodiments, the heat profile of the substrate may be provided in several steps. For example, one of the plurality of rotatable targets is heated to a lower temperature than the other target.

Typically, the magnet used inside the rotatable target is a permanent magnet. Since the permanent magnet is located in a target tube that is maintained at high temperature, according to one aspect, cooling is usually required. In operation, the magnets become quite hot. The reason is that the magnets are surrounded by a rotatable target where ions collide. As a result of the collision, the temperature of the target is raised.

For that reason, it is common to cool the target and the magnet. This is done to keep the magnet at a suitable operating temperature. In addition, the optimum deposition temperature was generally estimated to be below a predetermined temperature, and surprisingly, the inventors found that the high temperature of the target improves the quality of the deposited substrate when compared to the same application at low temperatures. When referring to quality herein, it is, for example, resistance (which, depending on the application, may have high or low special values), optical variables such as absorption spectra, thickness, density, hardness, adhesion, resistance, It should be understood that the scratchability and the like. Depending on the particular application, one or more of these properties of the coating layer should be set to a predetermined value. Moreover, this value should not change in the same layer as well as in several coated substrates.

When experimenting with the effect of high target temperatures, it has been found that the process of impinging the material from the target, ie sputtering in a strict sense, is not greatly affected by the high temperature. That is, it has not been found that the sputtering process step of dissolving material from the target is affected by temperature. Another study shows that eliciting improved layer deposition is the effect of high temperature targets on the substrate. For that reason, according to aspects herein, it is advantageous to provide heating from the front side of the substrate and to also provide heating from the front side to heat the substrate. To implement the latter, the rotatable target is used for front heating.

However, it should be taken into account, in particular in view of magnetron sputtering, that the magnets must be maintained at an operating temperature below a certain threshold. Typical thresholds for magnet operation are about 80 ° C. In order to allow the target to be hotter than the threshold temperature of the magnets, heat isolation can be provided between the outer target and the interior of the target. If this is thermal insulation, the thermal insulation can be the target material itself. It is also possible to have an additional layer between the outer target to be sputtered and the target tube holding the outer target. For example, the additional layer may be a bonding layer for bonding the target material to the target tube.

In addition to front heating made by the target, back heating for heating the substrate from the back is provided. By this integrated heating system, it can be ensured that the substrate is kept at a high temperature. According to an aspect of the invention, the substrate is at least 100 ° C by the front heating. It has been found that the quality of the layers deposited at such a temperature is better compared to the layers deposited at lower temperatures. This effect is further enhanced when the temperature rises to at least 200 ° C, 300 ° C, or even at least 400 ° C by front heating. In general, there is no obvious correlation between the target temperature and the substrate temperature. There may be embodiments where the target is heated to a high temperature, such as up to 400 ° C., but the substrate is somewhat in the ambient temperature range. For that reason, according to the present application, by the effect of the target serving as the front heater, it should be ensured that the substrate is at least 100 ° C. or higher.

The present application relates to coating of various materials. In particular, this relates to the coating of glass. Since glass plates generally have a fairly high heat storage capacity, for example once heated before entering the deposition chamber, the temperature drop is slow. Nevertheless, by providing the front heating, the entire manufacturing process becomes more cost effective since the preheating process can be reduced. In addition, the positive impact of additional front heating is effective at lower temperatures when compared to wafer coating. In particular, in the case of glass coatings, it is customary that the temperature rise by full surface heating is at least 150 ° C to 200 ° C.

The present application also typically relates to wafer cooling. The heat storage capacity of the wafer is typically low. Thus, in the prior art, if the wafer is preheated prior to entering the deposition chamber, the drop in wafer temperature within the deposition chamber is significant. Thus, by the application of the present application, the temperature in the chamber can be kept high, in particular by providing a front side heat capable of heating the wafer to a temperature above 100 ° C.

It is common to heat the wafer to a high temperature. In general, the front heating heats the wafer to a temperature of at least 250 ° C, 300 ° C, or even 400 ° C. In many embodiments of coating a wafer, high temperatures, such as between 350 ° C. and 500 ° C., or even 550 ° C., cause particularly positive effects of significant quality improvement. This can occur, for example, in the case of coating a silicon nitride layer on a wafer.

Typically, the thickness of the deposited layer is less than 1 mm, more preferably less than 1 μm, even more preferably less than 100 nm.

1 is a schematic cross-sectional view of an embodiment of a deposition apparatus as disclosed herein. The deposition apparatus 100 includes a substrate holder 110 for holding a substrate to be coated. The apparatus further includes a rotatable target 120 suitable for sputtering. The arrows indicated in FIG. 1 emphasize the continuous rotation of the target during operation. The rotatable target serves as a front heater of the substrate. The substrate is also heated from the back side. To this end, a back heater 130 is provided.

Preferably the rotatable target comprises a target tube. The target tube is indicated by reference numeral 121. Also in accordance with an embodiment disclosed herein, the rotatable target includes a magnetic mechanism. In FIG. 2, the magnetic device is indicated by reference numeral 122. Preferably, the magnetic device is disposed on the lower side inside the target. When the target is placed on the substrate, so-called sputter-down is performed. In a so-called sputter-up process the target is placed under the substrate. In this case, the magnetic mechanism is disposed on the upper side of the target.

In more general conditions, the magnetic device is disposed on the side of the substrate closer to the substrate to be coated. The rotatable target is preferably cylindrical in shape. According to many embodiments, at least some of the surfaces of the magnetic device are circular in cross section. This is exemplarily shown in FIGS. 2 and 3, wherein the lower surface of the magnetic device extends in parallel with the shape of the rotatable tube.

In FIG. 2, the distance between the parallel portions of the surface of the tube 121 and the magnetic device 122 can be seen. According to a typical embodiment, the distance is less than 5 mm, more preferably less than 3 mm, even more preferably less than 2 mm. By making the distance smaller, the magnetic effect of the magnetic mechanism can be fully utilized. In addition, this prevents the refrigerant flowing into the thin space between the target tube and the magnetic mechanism from operating effectively around the magnetic mechanism and cooling the target tube. The reason is that the rotatable target has a high operating temperature (described in detail below), while the temperature of the magnetic device is limited by the operating threshold temperature at which magnets no longer act.

As disclosed herein, it is desirable to heat the target to a high temperature. Preferably, at the same time, it is desirable to keep the magnetic mechanism below the operating threshold temperature. When the space between the magnetic mechanism and the target is reduced, the space in which the refrigerant flows becomes small, so that cooling of the target tube region is not effective. Therefore, the cooling of the target is insignificant. This effect can be further enhanced by providing the target with a thermally insulative material described in more detail below.

3 shows another embodiment of a rotatable target. In addition to the components shown in FIG. 2, FIG. 3 includes an inner tube 123. Preferably, the inner tube is suitable for holding a magnetic mechanism. The inner tube and the magnetic mechanism are both static while the target tube is typically employed to rotate. According to some embodiments, the inner tube interacts with an interface. In FIG. 3, the interface is indicated with reference numeral 125. Preferably, the interface is linked to the inner tube at its upper side and to the magnetic device at its lower side. The inner tube is filled with air in many embodiments. The remaining volume between the inner tube and the target tube is filled with a refrigerant to cool the magnetic device. This volume is indicated by reference numeral 124 in FIG. 3. The choice of refrigerant depends on the temperature in the tube. Preferably, oil or water is used for cooling. Typical temperatures inside the target tube range from 40 ° C to 80 ° C.

By filling the target tube with refrigerant, a cooling system arranged inside the rotatable target is provided. The cooling system serves to cool the interior of the target. First of all, this is the magnetic device. The cooling system according to the embodiments disclosed herein should be suitable for maintaining the magnetic device at a temperature below the magnetic device operating threshold temperature. On the other hand, this should allow the rotatable target to cool to a minimum as necessary so that the rotatable target can continue to serve as the front heater of the substrate. According to a typical embodiment, a control feedback loop is provided for controlling the cooling elements of the rotatable target. Preferably, the control feedback loop comprises a target temperature meter and control means, such as a metered valve for cooling fluid supply. In addition or alternatively to the target temperature meter, a substrate temperature meter may be provided. For example, the substrate temperature may be kept constant at a predetermined minimum temperature or higher. According to the result of the temperature measurement, the cooling fluid temperature is adjusted, that is, if the substrate temperature tends to be too low, it is high, and if the substrate temperature tends to be too high, it is low. Preferably, water is used as the cooling fluid.

4 schematically illustrates an embodiment of a deposition apparatus as disclosed herein. Compared with the features already disclosed in connection with the embodiment of FIG. 1, the embodiment of FIG. 4 further includes slits 410. The slits allow the substrate to enter the deposition apparatus and be withdrawn from the deposition apparatus after being coated. The embodiment further shows a transfer 420, such as a roll, suitable for moving the substrate holder 110 to the right side of the deposition apparatus, for example, to receive a new substrate through the slit 410.

In addition, the deposition apparatus includes an outlet 430 connected to the vacuum pump. In another embodiment, reference numeral 430 denotes at least one vacuum pump arranged directly on the deposition apparatus. The apparatus also includes an inlet 440 for sputtering gas. Preferably, the sputtering gas is an inert gas that is led to the deposition apparatus in operation. According to a typical embodiment, the sputtering gas is argon. The sputtering gas is ionized by electrons and then accelerated toward the target to dissolve the target material from the target. Preferably, the atmosphere inside the deposition apparatus ranges from 10 ⁻² mbar to 10 ⁻⁴ mbar.

The gas induced into the deposition apparatus may further comprise a component that binds to the target material. For example, by providing bulk silicon as a target and introducing nitrogen gas into the device, a silicon nitride layer can be produced. In addition, if a hydrogen containing silicon nitride layer is desired, in addition to nitrogen gas, a small amount of ammonia (NH ₃ ) or hydrogen (H ₂ ) gas may be added. This is beneficial for layer quality in terms of passivation properties.

5 is a graph schematically showing the temperature of a substrate to be coated over time. 5-7 should be compared to understand the advantages of the embodiments disclosed herein.

5 discloses a correlation between time and temperature in a conventional deposition process. Here, the substrate to be coated is heated to a high temperature indicated by T _max . Preferably, the substrate is heated at both sides before entering the deposition apparatus, such that it has the temperature T _max when entering the deposition apparatus or processing zone. At time A, the substrate enters the deposition apparatus and the temperature is drastically reduced because no front heating takes place inside the deposition apparatus. Then, between times A and B, the substrate is coated and the temperature is drastically reduced far below T _max . Preferably, this temperature (eg, at time B) is about 300 ° C. The coated substrate is withdrawn from the deposition apparatus for cooling. This is shown after time B in the graph. The rapid temperature decrease immediately after time A is because there is no front heating and only back heating inside the deposition apparatus. Thus, the overall heating capacity inside the deposition apparatus is not large enough to keep the substrate at a high temperature.

6 illustrates a relationship between time and temperature of a deposition process in accordance with an embodiment disclosed herein. Preferably, the trend of temperature is measured at the wafer as the substrate. As mentioned above, according to some embodiments, the substrate is heated to a preheating temperature T _max before entering the deposition apparatus. According to a typical embodiment, the temperature T _max is in the range of at least 300 ° C., more preferably at least 400 ° C., even more preferably 450 ° C. or even 500 ° C. However, according to the present invention, since a large temperature decrease is not expected in the deposition apparatus, the preheating can be reduced as compared with the conventional preheating. Thus, according to some embodiments, the preheat temperature T _max is at most 500 ° C., more preferably at most 450 ° C., even more preferably at most 400 ° C. By reducing the preheating power, overall power consumption can be reduced, resulting in cheaper coating formation. In another embodiment, especially if the sputter material is TCO, the preheating temperature is at most 400 ° C, more preferably at most 350 ° C, even more preferably at most 300 ° C.

The substrate is then transferred to a deposition apparatus including a heating system having a back heater for heating the back side of the substrate and a front heater for heating the front side of the substrate. Therefore, the temperature of the substrate can be maintained at a high level. According to the embodiment shown in FIG. 6, the temperature is maintained at a temperature T _max .

As described with reference to FIG. 5, the substrate is coated for time A and B. FIG. Accordingly, according to the embodiments disclosed herein, at least one of the following effects may be utilized. First, the temperature reduction in the coating process is small compared to the absolute value of the temperature. For example, the decrease may be less than 20% or even less than 10% of T _max . According to some embodiments, this temperature is kept constant, where "constant" typically means that the maximum deviation is 5%.

Second, the absolute temperature of the substrate is high. In one embodiment, the temperature is at least 100 ° C. According to another embodiment, the substrate temperature is maintained at least 200 ° C, more preferably at least 300 ° C or even 400 ° C. The high temperature of the substrate improves the layer quality.

7 illustrates another deposition embodiment disclosed herein. As in the embodiment of Figure 6, a heating system arranged in the deposition apparatus is employed to keep the substrate at a high temperature. However, in contrast to the exemplary embodiment described in connection with FIG. 6, this temperature is less than the original preheat temperature T _max . Therefore, when the substrate is introduced into the deposition apparatus at time A, the substrate temperature decreases slightly as shown in FIG. In some instances, the amount of reduction is at most 15%, preferably at most 10% or even 5% of the temperature T _max . In any case, the amount of reduction must meet the conditions of maintaining the substrate temperature at least 100 ° C. during the deposition process so that the layer quality is improved over conventional deposition techniques. In a typical embodiment, the substrate temperature is maintained at least 200 ° C, 300 ° C or even 400 ° C.

8 is a graph of the correlation between temperature and mass density of a deposited substrate. This was measured for the silicon nitride (SiN) layer and is in g / cm ³ . The temperature varied between 0 ° C. and 400 ° C. The three result graphs schematically shown are related to the sputtering process at various pressures. More specifically, line 610 represents a high pressure of about 10 μbar, line 620 represents a pressure of about 4 μbar, and line 630 represents a pressure of about 2 μbar.

As can be seen from this study, the mass density ρ increases at high substrate temperatures. Along with the substrate mass density ρ, the overall layer quality is also improved.

9 is a schematic cross-sectional view of a rotatable target according to embodiments. This shows the cylindrical target tube 121.

In general, all metals and ceramics with sufficient conductivity can be sputtered. Depending on the reaction gas, a dielectric layer may be formed. The deposited layers are preferably amorphous or monocrystalline. Preferably, in a dielectric layer or metallic process from a ceramic target, direct current power is used for sputtering. For the reaction process, MF power is commonly used.

In general, the target tube is preferably made of metal. Typical materials used for sputtering are indium alloys such as silicon (Si), indium (In), indium tin (InSn), tin (Sn), zinc (Zn), aluminum (Al), silicon nitride (SiN), copper (Cu), aluminum oxide (Al ₂ O ₃ ), zinc oxide (ZnO), CuInGa (CIG), or a combination thereof such as ZnO: Al ₂ O ₃ . Preferably, the deposited layer, such as a silicon layer, is a crystalline layer. In general, all metals and ceramics with sufficient conductivity can be sputtered. Depending on the reactant gas, a dielectric layer may be formed, for example hydrogen containing silicon nitride (SiN: H). These layers are preferably amorphous or monocrystalline.

According to some embodiments, the target tube is bonded to a target backing tube indicated at 910 in the embodiment of FIG. 9. The bonding layer is indicated by reference numeral 920 in FIG. 9. Preferably, the bonding material is indium-based.

According to some embodiments, a material with low thermal conductivity is selected as the bonding material. Thus, the bonding material may be a heat insulator having a thermal conductivity of preferably less than 0.3 W / mK, more preferably less than 0.2 W / mK or even less than 0.1 W / mK.

According to other embodiments, an unbonded rotatable target is used for sputtering. In this case, for example, the target tube is non-bonded to the target backing tube by mechanical pressure, or the rotatable target is a single part tube consisting only of the material to be coated.

According to the exemplary embodiment described with reference to FIG. 10, an additional layer is disposed between the target tube 121 and the target backing tube 910. This layer is labeled 1010 in FIG. 10. For example, this layer can be made of a heat insulating material. Preferably, the thermal conductivity of the additional layer is less than 0.3 W / mK, more preferably less than 0.2 W / mK or even less than 0.1 W / mK.

It is also possible that the layer does not completely fill the area between the target backing tube and the target tube. For example, the spacer may be designed to be arranged in at least some positions, such as three or four, between the target tube and the target backing tube. This embodiment also provides good thermal insulation because the target tube is located in the deposition apparatus vacuum and there is also a vacuum between the target backing tube and the target tube.

Since the rotatable target is kept at a high temperature, the deposition apparatus and its surroundings become very hot according to the embodiments disclosed herein. Thus, according to some embodiments, an external cooling system is provided for the deposition apparatus. According to some embodiments, the external cooling system (not shown) is attached to the deposition apparatus, for example, above the location of the target. The external cooling system prevents the deposition apparatus from overheating.

The present invention makes it possible to maintain the substrate temperature at a high level during coating. This is particularly useful for coating thin films such as silicon wafers. It is also more cost effective because it allows to reduce the preheating power. In particular, it is particularly useful in coating applications for coating glass and the like with high specific heat capacity.

While described in connection with the embodiments of the present invention, other additional embodiments of the present invention can be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

The present disclosure discloses the invention, including the best mode, and uses examples to enable those skilled in the art to make and use the invention. While the invention has been described in connection with various specific embodiments, those skilled in the art will recognize that the invention may be practiced with modifications that fall within the spirit and scope of the claims. In particular, mutually non-exclusive features of the above-described embodiments may be combined with each other. The patentable scope of the invention is defined by the claims, and may include other examples that occur to those skilled in the art. Such other examples are intended to fall within the scope of the claims if they have components that are not different from the verbal language of the claims, or if they include equivalent components with minor differences from the verbal language of the claims. It belongs.

Claims (15)

As a deposition apparatus 100 for sputtering a material on a substrate,
A substrate holder (110) for holding the substrate;
A rotatable target 120 configured to be sputtered;
A heating system including a back side heater (130) for heating the substrate from the back side and a front side heater for heating the substrate from the front side;
The rotatable target serves as the front side heater,
The front side heater is configured to heat the substrate to a temperature of at least 100 ° C,
Deposition apparatus.
The method of claim 1,
The rotatable target includes a target tube 121 and a magnetic mechanism 122,
Deposition apparatus.
The method according to claim 1 or 2,
The deposition apparatus further includes a cooling system 124 arranged inside the rotatable target to cool the interior of the target,
Deposition apparatus.
The method of claim 3, wherein
The cooling system 124 is configured to maintain the magnetic device at a temperature of less than 80 ° C,
Deposition apparatus.
The method according to claim 4 or 5,
Further comprising a control feedback loop for controlling the cooling system 124 of the rotatable target,
Deposition apparatus.
6. The method according to any one of claims 1 to 5,
The heating system further comprises an external heating system arranged in front of the deposition apparatus,
Deposition apparatus.
The method according to any one of claims 1 to 6,
The deposition apparatus further comprises a cooling system attached to and arranged on the deposition apparatus,
Deposition apparatus.
The method according to any one of claims 1 to 7,
The deposition apparatus is configured to deposit a layer on a wafer,
Deposition apparatus.
The method according to any one of claims 1 to 8,
Further comprising one or more additional rotatable targets, wherein the rotatable target and the one or more additional rotatable targets serve as front side heaters,
Deposition apparatus.
A method of depositing a layer of deposition material on a substrate in a deposition apparatus, the method comprising:
Holding a substrate;
Rotating the rotatable target;
Sputtering material onto the substrate;
Heating the substrate to a temperature of at least 100 ° C. by heating the substrate from the front side; And
Using the rotatable target for heating the substrate from the front side;
Deposition method.
The method of claim 10,
Further comprising the step of cooling the inside of the target,
Deposition method.
The method of claim 10 or 11,
Operating a magnetic mechanism disposed within the rotatable target; And
Further comprising maintaining the magnetic device at a temperature below 80 ° C.,
Deposition method.
The method according to any one of claims 10 to 12,
Further comprising heating the substrate before transferring the substrate to the deposition apparatus,
Deposition method.
The method according to any one of claims 10 to 13,
Further comprising the step of cooling the deposition apparatus:
Deposition method.
15. The method according to any one of claims 10 to 14,
The held substrate is a wafer,
Deposition method.

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