KR20110133094A - In-plane switching mode liquid crystal display device having touch sensing function and method of fabricating the same - Google Patents

Abstract

PURPOSE: A touch recognition in-phase switching mode liquid crystal display device and a manufacturing method thereof are provided to prevent a defect due to static electricity by discharging static electricity to the outside. CONSTITUTION: A liquid crystal panel includes a liquid crystal layer(190), a common electrode, a pixel electrode, and a color filter layer. The liquid crystal layer is formed between a first substrate(101) and a second substrate(171). The common electrode and the pixel electrode are formed on the inner side of the first substrate. The color filter layer is formed on the inner side of the second substrate. An antistatic layer is formed on the outer side of the second substrate of the liquid crystal panel. A moisture preventing layer covers the antistatic layer.

Description

In-plane switching mode liquid crystal display device having touch sensing function and method of fabricating the same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a transverse electric field type liquid crystal display device capable of touch recognition while suppressing defects caused by static electricity generated during a manufacturing process.

Recently, liquid crystal displays have been spotlighted as next generation advanced display devices having low power consumption, good portability, high technology value, and high added value.

In general, the liquid crystal display device is driven by using the optical anisotropy and polarization of the liquid crystal. Since the liquid crystal has a long structure, it has a directionality in the arrangement of molecules, and the direction of the molecular arrangement can be controlled by artificially applying an electric field to the liquid crystal.

Therefore, when the molecular alignment direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and light is refracted in the molecular alignment direction of the liquid crystal by optical anisotropy, so that image information can be expressed.

Currently, an active matrix liquid crystal display device (AM-LCD: abbreviated as an active matrix LCD, abbreviated as a liquid crystal display device) in which a thin film transistor and pixel electrodes connected to the thin film transistor are arranged in a matrix manner has the best resolution and video performance. It is attracting attention.

The liquid crystal display includes a color filter substrate on which a common electrode is formed, an array substrate on which pixel electrodes are formed, and a liquid crystal interposed between the two substrates. In such a liquid crystal display, the common electrode and the pixel electrode are caused by an electric field applied up and down. It is excellent in the characteristics, such as transmittance | permeability and aperture ratio, by the method of driving a liquid crystal.

However, the liquid crystal drive due to the electric field up and down has a disadvantage that the viewing angle characteristics are not excellent.

Accordingly, in order to overcome the above disadvantages, a transverse field type liquid crystal display device having excellent viewing angle characteristics has been proposed.

Hereinafter, a general transverse electric field type liquid crystal display device will be described in detail with reference to FIG. 1.

1 is a cross-sectional view of a general transverse electric field type liquid crystal display device.

As shown, the upper substrate 9, which is a color filter substrate, and the lower substrate 10, which is an array substrate, are spaced apart from each other, and the liquid crystal layer 11 is interposed between the upper and lower substrates 9, 10. It is.

The common electrode 17 and the pixel electrode 30 are formed on the lower substrate 10 on the same plane. In this case, the liquid crystal layer 11 is formed by the common electrode 17 and the pixel electrode 30. It is operated by the horizontal electric field (L).

2A and 2B are cross-sectional views illustrating operations of on and off states of a general transverse electric field type liquid crystal display device, respectively.

First, referring to FIG. 2A, which illustrates an arrangement of liquid crystals in an on state where a voltage is applied, a phase change of a liquid crystal 11a at a position corresponding to the common electrode 17 and the pixel electrode 30 is performed. Although the liquid crystal 11b positioned in the section between the common electrode 17 and the pixel electrode 30 is formed by the horizontal electric field L formed by applying a voltage between the common electrode 17 and the pixel electrode 30, It is arranged in the same direction as the horizontal electric field (L). That is, in the transverse electric field type liquid crystal display device, since the liquid crystal moves by the horizontal electric field, the viewing angle is widened.

Thus, as seen the lateral jeongyehyeong liquid crystal display device from the front, the up / down / left / right direction in the direction of about 80~85 ^o can be visible without reversal.

Next, referring to FIG. 2B, since no voltage is applied to the liquid crystal display, a horizontal electric field is not formed between the common electrode and the pixel electrode, so that the arrangement state of the liquid crystal layer 11 does not change.

On the other hand, such a transverse field type liquid crystal display device has a structure in which a common electrode made of a metallic material is not formed on the color filter substrate, in particular, to eliminate problems caused by static electricity during the manufacturing process, in particular, a module process, and to prevent abnormalities in image quality due to static electricity. To this end, a back electrode is formed on the back of the color filter substrate as indium tin oxide (ITO) or indium zinc oxide (IZO). When the thickness of the back electrode made of such a transparent conductive material is 200Ω, the sheet resistance is about 500Å / sq, and the sheet resistance is almost the level of the metal layer made of the metal material, and thus the static electricity generated during the manufacturing process through the back electrode is transferred to the outside. By discharging, it prevents problems caused by static electricity.

The transverse electric field type liquid crystal display device having the above-described configuration is used for various applications such as a TV, a projector, a mobile phone, a PDA, and the like.

On the other hand, recently, a product having a function of operating by touching a screen with a built-in touch sensor in a mobile phone, PDA or notebook, which can be personally carried, has attracted much attention of the user.

Along with this trend, various attempts have recently been made to have a touch function in a transverse electric field type liquid crystal display device which is used as a display element in various applications.

However, as described above, a transverse field type liquid crystal display device having a back electrode formed of a conductive material on a back surface of a color filter substrate may be touched by the back electrode even if an in-cell type touch sensor is provided. The capacitive change caused by the touch sensor cannot be detected, which causes a problem that the touch sensor does not operate.

That is, when the user's finger contacts the back electrode made of a transparent conductive material on the front surface of the color filter substrate, the capacitance generated in the contact area of the finger is generated between the finger and the back electrode. Since the capacitance is discharged to the outside through the back electrode formed for the electrostatic treatment, the in-cell type touch sensor implemented between the color filter substrate and the array substrate substantially does not recognize the operator's touch.

In order to solve such a problem, when the back electrode made of the transparent conductive material is deleted, the defective rate increases due to the generation of static electricity during the manufacturing process, and the display quality is deteriorated.

In order to solve the above problems, the present invention prevents defects due to static electricity generated during the manufacturing process and deterioration of display quality, and at the same time, when the user touches the screen, the in-cell type touch sensor operates normally to recognize the touch. It is an object of the present invention to provide a transverse electric field type liquid crystal display device.

In the transverse field type liquid crystal display according to the present invention for achieving the above object, a liquid crystal layer is provided between a first substrate and a second substrate facing the first substrate, and both the common electrode and the pixel electrode are disposed on the inner surface of the first substrate. A color filter layer comprising: a liquid crystal panel provided on an inner side surface of the second substrate; An antistatic layer formed on the outer surface of the second substrate of the liquid crystal panel with a first thickness of a mixed material of a conductive polymer material and a UV curable binder such that sheet resistance is several tens of MΩ / sq to several GΩ / sq; The moisture barrier layer is formed to cover the antistatic layer and have a second thickness on the entire surface of the second substrate.

At this time, the moisture barrier film is characterized in that the silica material.

In addition, the conductive polymer material is polyaniline, poly (3,4-ethylenedioxythiophene), polyacetylene, polypyrrole, polythiophene, polysulfurnitride The UV-curable binder is any one of acrylate (Acrylate), urethane acrylate oligomer (Urethane Acrylate Oigomer), acrylate monomer (Acrylate Monomer), wherein, the conductivity of the mixture The weight percent ratio of the polymer material and the UV-curable binder is 0.05: 99.5 to 10:90, and the mixture includes trimethlolpropane triacrylate (TMPTA) as a multi-functional monomer. In this case, the multifunctional monomer is characterized in that the content ratio is less than 0.5% of the weight percent of the UV-curable binder.

The first thickness is 500 kPa to 10,000 kPa, the second thickness is 50 kPa to 1,000 kPa, and the second thickness is preferably 1/10 to 1/200 of the first thickness.

In addition, the antistatic layer has a hardness value greater than 5H, and the moisture barrier film has a hardness value greater than 6H.

In addition, the first and second substrates may include a display area having a plurality of touch blocks in which a plurality of pixel areas are grouped, and a non-display area outside the display area. The gate and data lines formed to cross each other; A thin film transistor connected to the gate and data line in each pixel area; A first protective layer formed on a front surface of the thin film transistor; The common electrode formed to be spaced apart from each touch block on the first passivation layer; An x sensing wiring formed on the common electrode to overlap the gate wiring and a y sensing wiring formed on the common electrode and overlapping the data wiring; A second passivation layer formed over the common electrode, over the x sensing wiring and the y sensing wiring, and having a drain contact hole exposing the drain electrode of the thin film transistor; The pixel electrode contacting the drain electrode through the drain contact hole on the second passivation layer and formed for each pixel region, the pixel electrode having a plurality of openings; A black matrix formed at a boundary of each pixel region on an inner surface of the second substrate; The color filter layer overlaps the black matrix and is disposed to sequentially correspond to the red, green, and blue color filter patterns corresponding to each pixel area.

In this case, in the non-display area of the first substrate, an x-direction sensing circuit is provided at an end of the x-sensing wiring arranged in the same line in the extending direction of the gate wiring, and disposed in the same line in the extending direction of the data wiring. The y-direction sensing circuit is provided at the end of the y-sensing wiring.

A method of manufacturing a transverse electric field type liquid crystal display device according to an exemplary embodiment of the present invention includes forming a gate wiring, a data wiring, a thin film transistor, a common electrode, and a pixel electrode connected to the thin film transistor on an inner surface of a first substrate. Steps; Coating a polymer solution mixed with a conductive polymer material, a UV-curable binder and a solvent on the entire outer surface of the second substrate facing the first substrate and has a first thickness and a sheet resistance of several tens of MΩ / sq to several GΩ / sq. Forming an antistatic layer; Forming a moisture barrier film having a second thickness over the antistatic layer; Forming a black matrix and a color filter layer on an inner surface of the second substrate on which the moisture barrier film is formed; Positioning the first and second substrates such that the pixel electrode and the color filter layer face each other, and bonding the first and second substrates through a liquid crystal layer.

In this case, the first thickness is 500 kPa to 10,000 kPa, the second thickness is 50 kPa to 1,000 kPa, and the second thickness is characterized in that it is formed to be 1/10 to 1/200 of the first thickness.

According to still another aspect of the present invention, there is provided a method of manufacturing a transverse electric field type liquid crystal display device, including a gate wiring, a data wiring, a thin film transistor, a common electrode, and a pixel electrode connected to the thin film transistor on an inner surface of a first substrate. Forming; Forming a black matrix and a color filter layer on an inner surface of the second substrate facing the first substrate; Positioning the first and second substrates so that the pixel electrode and the color filter layer face each other, and bonding the first and second substrates to each other through a liquid crystal layer to form a liquid crystal panel having a first thickness; Exposing the liquid crystal panel to a chemical solution to etch the outer surfaces of the first and second substrates so as to have a second thickness thinner than the first thickness; Coating a polymer solution mixed with a conductive polymer material, a UV curable binder, and a solvent to be etched to have a third thickness on the entire outer surface of the second substrate of the liquid crystal panel having the second thickness, and a sheet resistance of several tens of MΩ / sq. Forming an antistatic layer ranging from several G 수 / sq; Forming a moisture barrier film having a fourth thickness over the antistatic layer.

In this case, the third thickness is 500 kPa to 10,000 kPa, the fourth thickness is 50 kPa to 1,000 kPa, and the fourth thickness is characterized in that it is formed to be 1/10 to 1/200 of the first thickness.

The forming of the moisture barrier layer may include forming a silica material layer by coating a sol silica on the entire surface of the antistatic layer through a spin coating apparatus or a slit coating apparatus; Heat-treating the silica material layer to remove the dispersant contained in the sol silica, thereby forming a gel silica layer, and simultaneously curing the gel silica layer.

The method may further include improving hardness of the antistatic layer by irradiating UV light to the antistatic layer before forming the moisture barrier layer.

In addition, the coating is characterized in that the progress through any one of a spin coating device or a slit coating device in the atmosphere of room temperature.

In addition, the conductive polymer material is polyaniline, poly (3,4-ethylenedioxythiophene), polyacetylene, polypyrrole, polythiophene, polysulfurnitride The UV curable binder is any one of acrylate (Acrylate), urethane acrylate oligomer (Urethane Acrylate Oigomer), acrylate monomer (Acrylate Monomer).

In addition, after the coating of the polymer solution, it comprises the step of drying the antistatic layer by heating through a heating means.

Forming an x sensing line overlapping the gate line and a y sensing line overlapping the data line on an inner surface of the first substrate; Mounting an x-direction sensing circuit connected to an end of the x sensing wiring and a y-direction sensing circuit connected to an end of the y sensing wiring in a non-display area of the inner surface of the first substrate.

In the touch-sensitive transverse electric field type liquid crystal display device according to the present invention, an antistatic layer having a sheet resistance of 10 ⁶ Ω / sq to 10 ⁹ Ω / sq is formed on the outer surface of the color filter substrate as a polymer material composed of a conductive polymer and a UV-curable acrylic binder. As a conductive layer for static electricity, the static electricity generated during the manufacturing process can be discharged to the outside to prevent defects caused by static electricity. Furthermore, the antistatic layer acts as a dielectric layer when the user touches the display area. The touch sensor has an advantage of enabling the touch sensor to sense that a change in capacitance of the touched part occurs when the user touches, thereby enabling the execution of an operation by touching the display area.

Furthermore, a moisture permeation film for preventing moisture permeation into the antistatic layer is formed to a thickness of about 100 kPa to about 1000 kPa on the outer surface of the antistatic layer so that a swelling phenomenon due to penetration of moisture into the antistatic layer even when exposed to a high temperature and high humidity atmosphere for a long time. Therefore, there is an advantage that the antistatic layer acts as an antistatic and a conductive layer for a long time by suppressing a phenomenon in which the conductive material escapes between the weakened film quality and the weakened film quality and the insulating property becomes strong.

1 is a cross-sectional view schematically showing a part of a general transverse electric field type liquid crystal display device.
2A and 2B are cross-sectional views showing operations of on and off states of a general transverse electric field type liquid crystal display device, respectively.
3 is a cross-sectional view of one pixel area within a display area of a touch-sensitive transverse electric field type liquid crystal display device according to a first embodiment of the present invention;
4 is a cross-sectional view of one pixel area within a display area of a touch-sensitive transverse electric field type liquid crystal display device according to a second embodiment of the present invention;
5A and 5B illustrate a liquid crystal panel having an antistatic layer formed therein in a touch recognition transverse electric field type liquid crystal display device according to a first embodiment of the present invention after being maintained at 65 ° C. for 90 hours in an atmosphere chamber having a humidity of 90%. Side and plane pictures of the surface film of the antistatic layer.
6A and 6B illustrate a liquid crystal panel having an antistatic layer and a moisture barrier film in a touch recognition transverse electric field type liquid crystal display according to a second embodiment of the present invention in an atmosphere chamber having a humidity of 65 ° C. and 90% for 500 hours. Side and planar photographs which photographed the surface film state of the said moisture barrier film after hold | maintain.
7A to 7G are cross-sectional views illustrating manufacturing steps of a touch recognition transverse electric field type liquid crystal display device according to a first exemplary embodiment of the present invention.
8A to 8H are cross-sectional views illustrating manufacturing steps of a touch recognition transverse electric field type liquid crystal display device according to a second exemplary embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

<First Embodiment>

3 is a cross-sectional view of one pixel area in a display area of a touch-sensitive transverse electric field type liquid crystal display device according to a first embodiment of the present invention.

In the touch-sensitive transverse electric field type liquid crystal display device 100 according to the first embodiment of the present invention, first, pure polysilicon is formed in each pixel area P on a transparent first insulating substrate 101, and a central portion thereof is a channel. The semiconductor layer 113 including the first semiconductor region 113a and the second semiconductor region 113b doped with a high concentration of impurities are formed on both sides of the first semiconductor region 113a.

In addition, a gate insulating layer 116 is formed on the entire surface of the semiconductor layer 113, and a gate electrode is formed on the gate insulating layer 116 to correspond to the first semiconductor region 113a of the semiconductor layer 113. 120 is formed.

In addition, the gate insulating layer 116 is connected to the gate electrode 120 and extends in one direction, and a gate wiring (not shown) is formed. The gate electrode 120 and the gate wiring (not shown) are formed on the front surface. An interlayer insulating film 123 made of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is formed. In this case, a semiconductor layer contact hole exposing each of the second semiconductor regions 113b positioned on both sides of the first semiconductor region 113a may be formed in the interlayer insulating layer 123 and the gate insulating layer 116 disposed below the interlayer insulating layer 123. 125) is provided.

Next, a data line 130 is formed on the interlayer insulating layer 123 including the semiconductor layer contact hole 125 to define the pixel region P by crossing the gate line (not shown).

In addition, source and drain electrodes 133 and 136 in contact with the second semiconductor region 113b exposed through the semiconductor layer contact hole 125 and spaced apart from each other in the device region TrA on the interlayer insulating layer 123. ) Is formed. In this case, the semiconductor layer 113, the gate insulating layer 116, the gate electrode 120, the interlayer insulating layer 123, and the source and drain electrodes 133 and 136 sequentially stacked on the device region TrA are switching elements. A thin film transistor (Tr) is formed. In this case, the thin film transistor Tr is electrically connected to the gate line (not shown) and the data line 130.

On the other hand, in the embodiment of the present invention, for example, the semiconductor layer 113 of polysilicon is provided, the top gate type thin film transistor (Tr) having the gate electrode 120 is formed thereon, but it is shown that Instead of the thin film transistor Tr having a structure, the semiconductor layer is formed of an active layer of amorphous silicon and an ohmic contact layer formed of impurity amorphous silicon and spaced apart from each other, and a gate electrode is disposed below the semiconductor layer. It is apparent that a bottom gate type thin film transistor may be formed and a thin film transistor modified in various forms may be provided.

Next, an inorganic insulating material, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiNx) may be formed on the data line 130, the source and drain electrodes 133 and 136, and the first connection pattern 138. The protective layer 140 is formed. In this case, the first passivation layer 140 is formed between the second passivation layer 145 made of an organic insulating material formed thereon and the data line 130 made of the metal material and the source and drain electrodes 133 and 136. This is to improve the bonding characteristics. Since the bonding force between the metal material and the organic insulating material is relatively weaker than the bonding force between the metal material and the inorganic insulating material and between the inorganic insulating material and the organic insulating material, the first protective layer 140 made of the inorganic insulating material is formed to improve the adhesion. It is. The first protective layer 140, which serves to improve the bonding strength, may be omitted.

Next, a second protective layer 145 formed of an organic insulating material, for example, photo acryl or benzocyclobutene (BCB), is formed on the first protective layer 140. At this time, the second protective layer 145 is characterized by having a flat surface state having a thick thickness of about 2 ㎛ to 4 ㎛ to overcome the step between the components located below.

Next, on the second passivation layer 145, each touch block TB is formed as a transparent conductive material and includes a plurality of pixel areas in one unit. The area touched by a user with a finger or the like is 1 mm 2. To a region having a size of about 10 mm 2). The common electrode 150 is formed in a patterned form. In this case, the common electrode 150 is more precisely formed in the first and second regions (not shown) again in the touch block TB.

 In addition, x-sensing wiring (not shown) is formed on the common electrode 150 formed by patterning for each touch block TB and overlaps with some data wiring 130. A sensing wiring ysl is formed.

Meanwhile, in each touch block (not shown), only first and third regions (not shown) may be electrically connected to each other, and the second region (not shown) may be electrically separated from each other. (Not shown) is characterized in that it has a configuration that is electrically connected only between the second region (not shown) in the touch block TB neighboring in the extending direction of the data line 130. Electrical connection between the first region (not shown) and the third region (not shown) in each of the touch blocks TB may include auxiliary wiring (not shown) in the step of forming the gate wiring (not shown) or the data wiring 130. ) And then forming an auxiliary contact hole (not shown) for exposing the auxiliary wiring (not shown) in the step of forming the interlayer insulating layer 123 or the second protective layer 145. The common electrode 150 may be patterned to form an electrical connection.

Next, an inorganic insulating material, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiNx), is formed on the entire display area over the common electrode 150 and the x and y sensing wirings (not shown, ysl). 155 is formed.

In this case, the first, second, and third protective layers 140, 145, and 155 of the portions corresponding to the drain electrodes 136 in each device region TrA are patterned, respectively, and are provided with drain contact holes 157. The third protective layer 155 of the portion corresponding to the x sensing wiring xsl provided in the first and third regions (not shown) in each of the touch blocks TB is patterned to form a fourth contact hole 159. Is provided.

Next, an array substrate is completed by forming a pixel electrode 160 in contact with the drain electrode 136 through the drain contact hole 157 in each pixel region P, above the third passivation layer 155. have. In this case, the pixel electrode 160 is provided with a plurality of bar-shaped openings (ops) to generate a fringe field together with the common electrode 150 when a driving voltage is applied.

The pixel electrode 160 and the common electrode 150 provided in each pixel region P are formed to overlap each other through the third protective layer 155, and overlap the common electrode 150. The third passivation layer 155 and the pixel electrode 160 form a storage capacitor.

Facing the array substrate 101 having the above-described configuration, a transparent second insulating substrate 171 is provided.

In addition, a black matrix 173 is provided on an inner surface of the second insulating substrate 171 to correspond to the boundary of each pixel region P and the thin film transistor Tr, and overlaps the black matrix 173. In the area captured by the black matrix 173, a color filter layer 175 including red, green, and blue color filter patterns R, G, and B is formed in a form corresponding to each pixel area P in order. It is.

In addition, the most characteristic of the present invention is that the outer surface of the second insulating substrate 171 is a conductive polymer material and UV (ultra violet) curable binder is mixed with an appropriate content ratio, the sheet resistance is several tens of MΩ / sq The antistatic layer 183, which is several GΩ / sq, is formed.

 In this case, the conductive polymer material may be, for example, polyaniline, polyedene (3,4-ethylenedioxythiophene), polyacetylene, polypyrrole, polythiophene, polysulphurtride (polyaniline), PEDOT (poly (3,4-ethylenedioxythiophene)) poly sulfur nitride, and the UV curable binder is made of any one selected from, for example, acrylate (Acrylate), urethane acrylate oligomer (Urethane Acrylate Oigomer), acrylate monomer (Acrylate Monomer) to be.

On the other hand, the conductive polymer material described above has a conductivity of about 10 ² s / cm to about 10 ^-5 s / cm, and when converted into a specific resistance value, it can be seen that about 10 ^-2 Ω / cm to about 10 ⁵ Ω / cm. In the case of a conductive polymer having such a specific resistance value, the conductive polymer is formed on the outer surface of the color filter substrate by itself, so that its conductivity is still large. As a means for releasing it to the outside, it serves as a means for performing well, but as a back electrode is formed on the outer surface of the color filter substrate using a conventional transparent conductive material, the touch of the user's finger is relatively large due to the high conductivity. The touch sensor for detecting the change in capacitance caused by the operation will be prevented.

Therefore, in the first embodiment of the present invention, resistance is imparted to weaken the conductive properties with respect to the conductive polymer material as described above to have a sheet resistance of several tens of MΩ / sq to several GΩ / sq. In order to improve the hardness of the material layer made of a material, a polymer material in a solution state in which a UV-curable binder is mixed is characterized in that an antistatic layer is formed on the outer surface of the color filter substrate.

When the antistatic layer 183 is formed to have a thickness of about 500 kPa to 5000 kPa, its sheet resistance is several tens of MΩ / sq to several GΩ / sq, and has a transmittance of 98% or more and a hardness greater than 5H. .

Here will be briefly described a method of preparing a polymer solution comprising the conductive polymer material and UV-curable binder.

First, the conductive polymer material and the UV binder may be dissolved and dispersed well, and a solvent having a low boiling point, such as isobutyl alcohol and isobutyl ketone, may be baked at a low temperature of 100 ° C. or lower. Ketone, methyl ethyl ketone, or any of the aforementioned conductive polymer materials (polyaniline, polyaniline, PEDOT (Poly (3,4-ethylenedioxythiophene)), polyacetylene, polypyrrole, polypyrrole, poly Thiophene, one of poly sulfur nitride, and UV-curable binder (Acrylate, Urethane Acrylate Oigomer, One of Acrylate Monomer) Add to have a proper content ratio. At this time, the appropriate content ratio (weight% ratio of the conductive polymer material to the weight% ratio of the UV-curable binder) is characterized in that 0.5: 99.5 to 10:90. At this time, the content ratio of the conductive polymer to 10% or less has a sheet resistance of about several tens of MΩ / sq to several GΩ / sq, and at the same time, the light transmittance of the antistatic layer made of these materials is indium-tin- which is a transparent conductive material. This is to be equal to or higher than the material layer made of oxide. That is, the back electrode made of indium-tin oxide has a transmittance of about 96.5%, and in order to have a transmissivity of the antistatic layer or 96.5% or more according to an embodiment of the present invention, the content ratio of the conductive polymer material is 10% or less. It is to be.

On the other hand, by putting a solvent mixed with a conductive polymer material and a UV-curable binder having an appropriate content ratio in a stirrer and stirred for several minutes to several hours to allow the conductive polymer material and the UV-curable binder mixed in the solvent to dissolve and disperse well in the solvent Finally, a polymer solution consisting of a solvent, a conductive polymer material, and a UV curable binder may be completed.

In this case, in addition to the conductive polymer material and the UV-curable binder, the polymer solution may have a molecular weight of about 300 to 400 in order to improve the bonding strength with the substrate within a range of 0.5% or less of the UV-curable binder by weight. Multi-functional monomers, for example, trimethlolpropane triacrylate (TMPTA) may be further included. Such a multifunctional monomer serves to improve the bonding force with the glass substrate by the multifunctional group.

The polymer solution thus prepared is coated on the outer surface of the color filter substrate and then fired to have a sheet resistance of several tens of MΩ / sq to several GΩ / sq, having a transmittance of 98% or more, and an antistatic layer having a hardness greater than 5H. 183 may be formed. At this time, the antistatic layer having such characteristics is characterized by having a thickness of about 500 kPa to 5000 kPa.

On the other hand, when the antistatic layer is not formed on the outer surface of the color filter substrate, if the electrostatic charge occurs during the manufacturing process, especially during the module process, the second insulating substrate 171 having the color filter layer 175 is substantially Since a conductive layer or a metal wiring is not formed, there is no component for discharging the static electricity to the outside, thereby causing a defect and a deterioration in image quality due to the destruction of the component.

Therefore, in order to suppress the occurrence of defects due to static electricity, it is essential to form an antistatic layer on the outer surface of the second insulating substrate 171 provided with the color filter layer. At this time, if the antistatic layer 183 is large in conductivity, it is advantageous to solve the problem according to the occurrence of static electricity, but the antistatic layer having high conductivity is touched by a user's finger when touch driving is performed in a manner of detecting a change in capacitance. Since all current generated by the touch is released to the antistatic layer when the capacitor is generated, a capacitor is not configured between the common electrode provided in the first insulating substrate 101 and the finger.

Accordingly, in order to solve this problem, the touch-sensitive transverse electric field type liquid crystal display device 100 according to the embodiment of the present invention has a conductive surface as described above on the outer surface of the second insulating substrate 171 provided with the color filter layer 175. Formed as a polymer material and a UV-curable binder, the antistatic layer 183 having a sheet resistance of several tens of MΩ / sq to several GΩ / sq is formed, so that even if static electricity is generated during the manufacturing process, it can be discharged to the outside by the generation of static electricity. It is characterized in that the capacitance can be formed when the user touches the finger while suppressing defects.

The conductive polymer material and the UV-curable binder have an appropriate content ratio and have sheet resistances of about several tens of MΩ / sq to several GΩ / sq and are formed on the entire outer surface of the second insulating substrate 171 provided with the color filter layer 175. As described above, the antistatic layer 183 serves as an antistatic means and when the user touches a finger with respect to the display area, the antistatic layer 183 is provided on the first insulating substrate 101 provided with the thin film transistor Tr. The touch sensing sensor composed of the x and y sensing wirings (not shown, ysl) and the common electrode 150 patterned for each touch block TB is provided in a manner that does not interfere with the operation of the touch sensing sensor.

That is, the antistatic layer 183 serves as a dielectric layer by being provided between the finger and the common electrode 150 on the array substrate 101 in a portion where the finger is touched by the user's finger touch. Helps to form a capacitor having a finger and the common electrode 150 as an electrode, and thus it is possible to detect a touch operation by a capacitor formed by the user's finger and the common electrode.

The capacitor formation by touch will be described in detail. When the touch of the display area is generated by the user's finger or the like, the antistatic layer 183 is substantially dozens of M 수 / sq to the liquid crystal layer 190. By acting as an insulating layer having a sheet resistance of several GΩ / sq, a finger generated by a finger (not shown) touch, the common electrode 150 for each touch block TB provided on the array substrate 101, and these two A capacitor is formed between the liquid crystal layer 190, the color filter layer 175, the second insulating substrate 171, and the antistatic layer 183 formed as a dielectric layer between the components 150 (not shown). In addition, a plurality of non-display areas of the array substrate 101 are provided through x-sensing wiring (not shown) and y-sensing wiring (ysl) connected to the common electrode 150 using the capacitance generated in the capacitor as an electromotive force. By applying a predetermined voltage signal to the X direction sensing circuit (not shown) and the Y direction sensing circuit (not shown), the position of the touched part in the display area is determined, and the operation displayed on the touched part is performed. .

The static electricity is instantaneous constant voltage of thousands to tens of thousands of V, and in the situation where a static electricity is generated and the high voltage of such static electricity is applied, the antistatic layer 183 having a sheet resistance of several tens of MΩ / sq to several GΩ / sq is electrically conductive. In general, a small amount of current flowing through a human finger may be in the order of several nA to several microwatts, and thus the sheet resistance of the tens of MΩ / sq to several GΩ / sq may be applied to the current of this magnitude. The antistatic layer 183 having a role of an insulating layer. Therefore, when the finger is touched, the antistatic layer having a sheet resistance of about several tens MΩ / sq to several GΩ / sq serves as a dielectric layer of the capacitor.

Therefore, the touch-sensitive transverse electric field type liquid crystal display device 100 according to the present invention is a device for discharging static electricity generated during the manufacturing process to the outside even if the antistatic layer 183 is formed on the outer surface of the color filter substrate 171. Since the antistatic layer 183 does not act as an interference means for preventing the user from forming the capacitance when the user touches, the touch-sensitive operation is possible.

Furthermore, since the UV-curable binder is made of a polymer material and its internal bonding force is tightly bound by the binder, the hardness thereof is 5H or more, and the scratches generated during the manufacturing process due to such high hardness characteristics It is also a characteristic constitution that suppresses the occurrence of.

Meanwhile, the liquid crystal layer 170 is interposed between the first insulating substrate 101 and the second insulating substrate 171 having the above-described configuration, and seals the display region with a non-display region outside the display region. By being a pattern (not shown), the touch-sensitive transverse electric field type liquid crystal display device 100 according to the first embodiment of the present invention is completed.

However, in the touch recognition horizontal field type liquid crystal display device 100 according to the first embodiment having the above-described configuration, the antistatic layer 183 has a high hardness of 5H or more, and has a conductive property to prevent static electricity. Even when touched, it plays a role as a dielectric layer, but when exposed for a long time in an environment of high temperature and high humidity, swelling occurs due to moisture permeation. Since the hardness is lowered and the sheet resistance is rapidly increased as time passes, the antistatic layer 183 increases the insulating property. Therefore, the touch recognition according to the second embodiment of the present invention improves the above-described problem. A transverse field type liquid crystal display device is proposed.

&Lt; Embodiment 2 >

4 is a cross-sectional view of one pixel area in a display area of a touch-sensitive transverse electric field type liquid crystal display device according to a second exemplary embodiment of the present invention. In this case, in the touch-sensitive transverse electric field type liquid crystal display device according to the second embodiment of the present invention, the components provided on the inner surface of each of the first and second insulating substrates are the touch-sensitive transverse electric field type liquid crystal display according to the first embodiment described above. Since it has the same configuration as the device, the description thereof will be omitted, and the description will be given mainly on the components provided on the outer surface of the second insulating substrate having different points. For convenience of description, the same reference numerals are given to the same elements as in the first embodiment.

The outer surface of the second insulating substrate 171 having the color filter layer 175 on the inner side thereof is mixed with a conductive polymer material and a UV (ultra violet) curable binder with an appropriate content ratio, and the sheet resistance thereof is several tens of MΩ / sq. To a few GΩ / sq and has an antistatic layer 183 having a thickness of about 500Å to 10,000Å and coated with sol silica (SiO ₂ ) on top thereof to cure, and has a very thin thickness of about 50Å to 1000 경화. It is a feature that 186 is formed.

 In this case, the conductive polymer material may be, for example, polyaniline, polyedene (3,4-ethylenedioxythiophene), polyacetylene, polypyrrole, polythiophene, polysulphurtride (polyaniline), PEDOT (poly (3,4-ethylenedioxythiophene)) poly sulfur nitride, and the UV curable binder is made of any one selected from, for example, acrylate (Acrylate), urethane acrylate oligomer (Urethane Acrylate Oigomer), acrylate monomer (Acrylate Monomer) to be.

At this time, the moisture barrier film 186 is characterized in that it is formed to have a thickness of about 1/10 times to 1/200 times the thickness of the anti-static layer 183 formed in the lower portion. The thickness of the moisture barrier layer 186 is formed to be thinner than the thickness of the antistatic layer 183 formed at the bottom thereof. Since the conductive property of the antistatic layer 183 is reduced, the thickness of the antistatic layer 183 may be reduced, so that the role of the antistatic layer of the antistatic layer 183 may be reduced, so that the antistatic layer 183 maintains a specific level of specific resistance. to be.

Although the moisture barrier layer 186 having a thickness of about 1/10 to 1/200 of the antistatic layer 183 is formed on the antistatic layer 183 and formed of silica, the antistatic layer 183 and the moisture barrier layer ( 186 has a slightly higher sheet resistance than the case where only the antistatic layer 183 is formed, but still has a sheet resistance of several tens of MΩ / sq to several GΩ / sq. It can act as an effective discharge of static electricity to the outside.

Meanwhile, even though the moisture barrier film 186 is formed of the antistatic layer 183 on the silica material, the silica is colorless and transparent, and the light transmittance is very high, and the thickness thereof is very thin, such as 50 Å to 1000 Å. Rarely occurs. Therefore, even if the moisture barrier film 186 is formed on the antistatic film, the light transmittance still has a transmittance of 98% or more, and the hardness of the inorganic material silica is also increased compared to that of the first embodiment, resulting in a hardness of 6H or more. It is characterized by being.

Here, a brief description will be made of a method for producing silica in a sol state constituting the moisture barrier film 186. Since the method for preparing a polymer solution including the conductive polymer material and the UV-curable binder has already been described through the first embodiment, the description thereof will be omitted.

Sol-gel refers to a method of manufacturing "sol-gel derived ceramics", that is, a process that goes through the process of "sol → gel → ceramic". The sol thus formed is transferred to a gel by removal of the solvent which is the half acid medium.

Sol refers to a case in which the dispersed phases are independent of each other in a colloidal solution colloidal dispersion system. Generally, it is composed of particles (colloids) of about 1 to 1000 nm and is small enough to neglect the action of gravity and gravity. Van der waals) It refers to colloidal suspension dispersed without attraction due to attraction or surface charge. When a liquid is used as a dispersion medium, fluidity is exhibited. At this time, an aqueous solvent is used as a dispersion medium, and an organic liquid is used as a dispersion medium, and air is used as an injection medium.

Such sol can be prepared using a hydrolysis method, a polycondensation reaction.

That is, a sol, more precisely, a silica sol can be formed by hydrolyzing the metal alkoxide in a solution containing a metal alkoxide (such as silicon), water, and alcohol, followed by a continuous polycondensation reaction to form a porous body. have.

On the other hand, gel (Gel) means that the colloidal dispersion system which uses a liquid as a dispersion medium is in the state which lost fluidity and solidified. Disperse phases are also connected and generally exhibit remarkable elasticity.

Therefore, sol-like silica can be prepared by applying the above-described sol-gel method, and heat treatment is performed in a sol state to remove the dispersion medium to form a gel state, and such a gel state By shaping into various shapes at, thin films, fibers, and powders of a single size can be obtained.

In the case of sol silica, the liquid phase forms a liquid phase, so that the silica is formed on the front surface of the second insulating substrate 171 through a spin coating apparatus or a slit coating apparatus (not shown). After coating and heat treatment to remove the dispersion medium to achieve a gel (gel) state, by curing the gel in the gel (gel) state it can be finally to achieve a thin moisture barrier film 186.

5A and 5B illustrate a liquid crystal panel having an antistatic layer formed therein in a touch recognition transverse electric field type liquid crystal display device according to a first embodiment of the present invention after being maintained at 65 ° C. for 90 hours in an atmosphere chamber having a humidity of 90%. 6A and 6B illustrate a liquid crystal panel having an antistatic layer and a moisture barrier layer in a touch-sensitive transverse electric field type liquid crystal display device according to a second embodiment of the present invention. It is a side and planar photograph which image | photographed the state of the surface film | membrane of the said moisture permeation prevention film | membrane after hold | maintaining for 500 hours in the atmosphere chamber of 65 degreeC and 90% humidity.

In the case of the liquid crystal panel according to the first exemplary embodiment of the present invention in which only an antistatic layer is formed, moisture is penetrated into the antistatic layer by swelling due to exposure to an environment of high temperature and high humidity for a long time, resulting in weak and weak film quality. It can be seen that a large number of irregularly convex portions having a very rough surface and a relatively large area have been generated by the conductive polymer material passing through. The antistatic layer having such a state was found to be difficult to perform the role as the antistatic layer over time by increasing the sheet resistance due to the loss of the conductive material.

However, in the case of the liquid crystal panel according to the second embodiment, which covers the antistatic layer and has a thickness of about 50 μs to 1000 μs and is formed of a moisture barrier film of silica material, the inside of the antistatic layer even in an environment of high temperature and high humidity by the moisture barrier film of silica material. As the moisture permeation of the furnace was little progressed, the surface of the furnace was relatively flat and there was no irregular bulge.

Therefore, in the case of the antistatic layer positioned below the moisture barrier layer, the film quality did not occur and the conductive material did not escape, and thus the sheet resistance was maintained at a level of several tens of MΩ / sq to several GΩ / sq. Even after that, it was found that the antistatic role was smoothly performed.

Hereinafter, a brief description will be made of a method of manufacturing a touch recognition transverse electric field type liquid crystal display device according to the present invention having the above-described configuration. At this time, the manufacturing method of the touch recognition transverse electric field type liquid crystal display device in which only the antistatic layer is formed is substantially except for the step of forming the moisture permeation prevention film compared to the manufacturing method of the touch recognition transverse electric field type liquid crystal display device provided with both the antistatic film and the moisture barrier film. Since it is the same, description thereof is omitted.

7A to 7H are cross-sectional views illustrating manufacturing steps of a touch recognition transverse electric field type liquid crystal display device according to a first exemplary embodiment of the present invention.

First, as shown in FIG. 7A, pure amorphous silicon is deposited on the transparent first insulating substrate 101 to form a pure amorphous silicon layer (not shown), and irradiated with a laser beam or heat treatment. The amorphous silicon layer (not shown) is crystallized with a polysilicon layer (not shown).

Subsequently, the polysilicon layer (not shown) is patterned by performing a mask process to form the semiconductor layer 113 in the pure polysilicon state in each pixel region P. Referring to FIG.

Next, an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is deposited on the semiconductor layer 113 of pure polysilicon to form a gate insulating layer 116.

Next, a first metal layer (not shown) is deposited on the gate insulating layer 116 by depositing one of a metal material, for example, aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, and chromium (Cr). And forming the gate electrode 120 corresponding to the central portion of each of the semiconductor layers 113, and at the same time, forming the device region TrA on the gate insulating layer 116 at the boundary of the pixel region P. A gate wiring (not shown) connected to the gate electrode 120 formed at the sidewall and extending in one direction is formed.

Next, the dopant is doped in the portion of the semiconductor layer 113 outside the gate electrode 120 by doping an impurity on the entire surface of the first insulating substrate 110 using the gate electrode 120 as a blocking mask. The doped second semiconductor region 113b is formed, and the portion corresponding to the gate electrode 120 where the doping of the impurities is prevented is blocked to form the first semiconductor region 113a of pure polysilicon.

Next, an inorganic insulating material, such as silicon nitride (SiNx) or silicon oxide (SiO ₂ ), is formed on the entire surface of the second insulating substrate 110 on which the semiconductor layer 113 divided into the first and second semiconductor regions 113a and 113b is formed. ) To form an interlayer insulating film 123 on the front.

Thereafter, the interlayer insulating layer 123 and the lower gate insulating layer 116 are patterned to form a semiconductor layer contact hole 125 that exposes the second semiconductor region 113b of each of the semiconductor layers 113, respectively.

Next, a metal material such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, chromium (Cr), and molybdenum may be disposed on the interlayer insulating layer 123 having the semiconductor layer contact hole 125. Mo is deposited to form a second metal layer (not shown), and patterning it to contact the second region 113b through the semiconductor layer contact hole 125 in the device region TrA, respectively. Source and drain electrodes 133 and 136 spaced apart from each other are formed.

At the same time, a data line 130 is formed on the interlayer insulating layer 123 and connected to the source electrode 133 formed in the device region TrA at the boundary of the pixel region P and intersects the gate line (not shown). do. In this case, although not shown in the drawing, in the step of forming the gate wiring (not shown) or the data wiring 130, an auxiliary wiring (not shown) disposed in parallel with the wiring (not shown) 130 may be further formed.

The semiconductor layer 113, the gate insulating layer 116, the gate electrode 120, and the interlayer insulating layer 123 and the source and drain electrodes 133 and 136 disposed in the pixel region P are spaced apart from each other. Phosphorus thin film transistor (Tr) is formed.

Meanwhile, in the manufacturing method according to the first embodiment of the present invention, a polysilicon semiconductor layer 113 is provided, and a top gate type thin film transistor Tr having the gate electrode 120 positioned thereon is formed. Although not shown in the drawings as a modified example thereof, a gate wiring and a gate electrode are formed in place of the top gate thin film transistor Tr, a gate insulating film is formed, an active layer of amorphous silicon, Forming a semiconductor layer made of an impurity amorphous silicon and having an ohmic contact layer spaced apart from each other, and forming a source and a drain electrode spaced apart from each other with a data line, thereby forming a gate under the semiconductor layer. A bottom gate type thin film transistor in which the electrode is located may be formed.

Next, an inorganic insulating material, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is deposited on the thin film transistor Tr and the data line 130 to form a first passivation layer 140. An organic insulating material, for example, photo acryl or benzocyclobutene (BCB) is coated on the first passivation layer 140 to form a second passivation layer 145 having a flat surface. At this time, the first protective layer 140 is formed to improve the bonding strength may be omitted.

Next, a transparent conductive material, for example, indium tin oxide (ITO) or indium zinc oxide (IZO), is deposited on the entire surface of the second protective layer 145, and then patterned. The common electrode 150 is formed to be spaced apart from each other. In this case, each of the common electrodes 150 transmits a predetermined voltage when touched to the x and y direction sensors (not shown) through the x and y sensing wirings (ysl), respectively, in the touch blocks TB. It is formed so as to be separated into the first, second, and third regions (not shown), the electrical connection between the first region (not shown) and the third region (not shown) in each touch block (TB) The interlayer insulating layer is further formed after the auxiliary line (not shown) is further formed in the step of forming the gate line (not shown) or the data line 130 for electrical connection between the second regions (not shown) between the touch blocks TB. Forming an auxiliary contact hole (not shown) for exposing the auxiliary wiring (not shown) and forming the common electrode 150 in the forming of the 123 or the second protective layer 145. Can be connected.

Next, a third metal layer (not shown) is formed by depositing any one of a low resistance metal material, for example, aluminum (Al), aluminum alloy (AlNd), copper (Cu), and copper alloy, on the common electrode 150. By patterning this, x-sensing wiring (not shown) and y-sensing wiring (ysl) overlapping with some gate wiring (not shown) and data wiring 130 are formed. In this case, although each of the touch blocks TB may be formed in the form of a short between the x sensing wiring (not shown) and the y sensing wiring ysl, the x and y sensing wiring between each touch block TB. (Not shown, ysl) is characterized by forming without shorting.

Next, an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is deposited on the x sensing wiring (not shown) and the y sensing wiring (ysl) to form a third protective layer 155. The drain contact hole 157 exposing the drain electrode 136 is formed by patterning the third passivation layer 155, the second passivation layer 145, and the first passivation layer 140.

Next, a transparent conductive material, for example, indium tin oxide (ITO) or indium zinc oxide, is disposed on the third protective layer 155 having the drain contact hole 157 and the fourth contact hole 159. (IZO) is deposited and patterned to form a pixel electrode 160 in contact with the drain electrode 136 through the drain contact hole 157 in each pixel region P, thereby forming a touch-sensitive transverse electric field type liquid crystal display device. The array substrate 101 is completed. In this case, the pixel electrode 160 is formed to have a plurality of openings having a bar shape spaced apart from each other in the pixel region P to form a fringe field with the common electrode 150 disposed below the pixel electrode 160. Is characteristic.

Next, as shown in Figure 7b, the polymer coating, characterized in that the conductive polymer material and the UV-curable binder on the outer surface of the second insulating substrate 171 has a proper content ratio and dispersed in a solvent and dispersed in a polymer coating device (Not shown) or by coating at room temperature through the slit coating apparatus 195 to form a polymer material layer 182. In this case, in the polymer solution, a multi-functional monomer having a molecular weight of about 300 to 400, for example, trimethlolpropane triacrylate, may be used to improve bonding strength with the second insulating substrate 171. May include TMPTA)

Since the method for preparing a polymer solution composed of such a conductive polymer material, a UV-curable binder and a solvent has already been described, it will be omitted.

Subsequently, as shown in FIG. 7C, the polymer solution layer 182 of FIG. 4B undergoes a drying process in which the polymer solution layer 182 is heated using a heating device 197 such as a furnace or an oven. By removing the solvent by volatilization, the antistatic layer 183 is formed, which has a thickness of about 500 kPa to 10,000 kPa and its sheet resistance is about several tens of M / sq to several G / sq.

Next, as shown in FIG. 7D, the UV-curable binder reacts with the UV light by irradiating UV light with the UV device 198 to the antistatic layer 183 from which the solvent is removed through a drying process. By internally cross linking (cross linking) is made to improve the bonding strength with the conductive material so that the hardness is 5H or more.

Next, as shown in FIG. 7E, a sol silica prepared by a sol-gel method on the antistatic layer 183 is spin coated or slit coated. Silica material layer 185 is formed by coating the entire surface through 196.

Thereafter, the second insulating substrate 171 on which the silica material layer 185 is formed is heat-treated using a heating apparatus (not shown), such as a furnace or oven, to form the sol state. As shown in FIG. 7F, a silica layer (not shown) in a gel state is formed by volatilizing a dispersant in the material layer 185 of the material layer and continuously curing the heat treatment process further for a predetermined time. A moisture barrier film 186 having a thickness of about 50 kPa to 1000 kPa is formed.

As described above, the moisture barrier film 186 is formed to act as a protective film on the antistatic layer 183 formed on the outer surface of the second insulating substrate 171, and the hardness thereof is 6H or more, thereby forming a blade or a brush later. It is a feature that defects such as surface scratches can be further suppressed during the cleaning process of removing surface foreign substances by brush.

In the case of the touch-sensitive transverse electric field type liquid crystal display device according to the first embodiment, only the antistatic layer (183 of FIG. 3) is formed so that the hardness thereof is about 5H. In the second embodiment, the outer surface of the second insulating substrate 171 is used. Since the moisture permeation prevention layer 186 covering the corrector prevention layer 183 is further provided, the hardness is 6H or more, so that the scratches caused by blade or brush contact during the cleaning process become more stable. Is characteristic.

Next, as shown in FIG. 7F, an antistatic layer 183 having a thickness of about 500 kPa to about 10,000 kPa and a thickness of about 50 kPa to about 1000 kPa is provided on the outer surface with a sheet resistance of several tens of MÅ / sq to several GΩ / sq. Applying a material, for example, black resin, that blocks light transmission to the inner surface of the second insulating substrate 171 having the moisture barrier layer 186 having the moisture permeation prevention film 186 formed thereon, and patterning the same to process the pixel region P. The black matrix 173 is formed corresponding to the boundary.

Next, by applying a red resist on the black matrix 173 and patterning it, a red color filter pattern R is formed corresponding to each pixel area P, and then the same red color filter pattern R is formed. The color filter substrate 171 is completed by forming the color filter layer 175 including the red, green, and blue color filter patterns R, G, and B by forming the green and blue color filter patterns G and B by the method. do. In this case, an overcoat layer (not shown) having an optionally flat surface may be further formed on the color filter layer 175.

Next, as shown in FIG. 7G, the array substrate 101 and the color filter substrate 171 are positioned such that the pixel electrode 160 and the color filter layer 175 face each other, and then the array substrate 101. ) Or a seal pattern (not shown) is formed in a form bordering the display area of any one of the color filter substrate 171.

Thereafter, the liquid crystal panel is completed by bonding the array substrate 101 and the color filter substrate 171 with the liquid crystal layer 190 interposed inside the seal pattern (not shown).

Although not shown in the drawing, the cleaning process including the blade and the brush process is performed on the completed liquid crystal panel as described above, and then the module process is performed to provide a structure of the array substrate 101 and the color filter substrate 171. Each polarizing plate is attached to the outermost side, and a plurality of X direction sensings are connected to the x sensing wiring (not shown) and the y sensing wiring (ysl) for each touch block TB line in the non-display area of the array substrate 101. A first embodiment of the present invention is provided by mounting a circuit (not shown) and a y direction sensing circuit (not shown), and furthermore, mounting a driving circuit board (not shown) connected to the gate and data wires (not shown). The touch-sensitive transverse electric field type liquid crystal display device 100 according to the manufacturing method is completed.

8A to 8H are cross-sectional views illustrating manufacturing steps of a touch recognition transverse electric field type liquid crystal display device according to a second exemplary embodiment of the present invention. According to the second embodiment of the present invention, there is provided a method of manufacturing a touch-sensitive transverse electric field type liquid crystal display, forming an antistatic layer on an outer surface of a color filter substrate, and etching the outer surface of the color filter substrate and the array substrate to form a thickness thereof. Since only the step of thinning is different and the formation of other components is the same as the manufacturing method according to the first embodiment described above, the description will be mainly focused on the difference.

First, as shown in FIG. 8A, the process proceeds in the same manner as in the first embodiment, and the thin film transistor Tr, the gate and data wirings (not shown) 130 which cross each other, the x sensing wirings (not shown), and y. The array substrate 101 including the sensing wiring ysl and the common electrode 150 and the pixel electrode 160 is completed.

Next, as shown in FIG. 8B, a material, for example, black resin, which blocks light transmission without forming an antistatic layer made of a conductive polymer material and a UV curable binder is coated on the second insulating substrate 171 and then masked. By performing the process and patterning, the black matrix 173 is formed corresponding to the boundary of each pixel region.

Thereafter, a red resist is applied onto the black matrix 173 and patterned to form a red color filter pattern R corresponding to each pixel area, and then green in the same manner as the red color filter pattern R is formed. And by forming the blue color filter patterns G and B, the color filter substrate 171 is completed by forming the color filter layer 175 including the red, green, and blue color filter patterns R, G, and B. In this case, an overcoat layer (not shown) having an optionally flat surface may be further formed on the color filter layer 175.

Next, as shown in FIG. 8C, the array substrate 101 and the color filter substrate 171 are positioned so that the pixel electrode 160 and the color filter layer 175 face each other, and then the array substrate 101. ) Or a seal pattern (not shown) is formed in a form bordering the display area of any one of the color filter substrate 171. Thereafter, the liquid crystal panel is completed by bonding the array substrate 101 and the color filter substrate 171 with the liquid crystal layer 190 interposed inside the seal pattern (not shown).

Next, as illustrated in FIG. 8D, the liquid crystal panel is exposed to a chemical solution, eg, hydrofluoric acid (HF) solution, capable of melting outer surfaces of the first and second insulating substrates 101 and 171 made of glass. As a result, the outer surfaces of the first and second insulating substrates 101 and 171 react with the chemical liquid, thereby gradually reducing the thickness of the first and second insulating substrates 101 and 171 made of glass. The substrate etching process may be performed by dipping the liquid crystal panel into a tank containing the chemical liquid, or spraying the chemical liquid through a nozzle or the like on the upper and lower portions of the liquid crystal panel ( spray method.

The reason why the liquid crystal panel is exposed to the chemical liquid and the thickness thereof is thin is to form a thin liquid crystal display device.

When the thin film transistor Tr or the manufacturing process for forming the color filter layer 175 proceeds, the first and second insulating substrates 101 and 171 themselves are cracked during the manufacturing process when a thin glass substrate is used. Frequent cracking or cracking leads to high failure rates.

Therefore, after completing the liquid crystal panel using a glass substrate having a sufficient thickness (typically about 0.5 mm to 0.7 mm) so that cracking hardly occurs in the manufacturing process, the substrate etching process as described above is performed. By proceeding, the thickness of the first and second insulating substrates 101 and 171 itself is reduced to about 0.2 mm to 0.3 mm.

Next, as shown in FIG. 8E, the conductive polymer material and the UV-curable binder described above are appropriate for the outer surface of the color filter substrate 171 of the liquid crystal panel in which the substrate etching process is performed to reduce the thickness thereof. A polymer solution having a ratio and dispersed in a solvent is coated by using any one of a spin coating apparatus or a slit coating apparatus 195 in an atmosphere of room temperature to form a polymer solution layer 182.

Subsequently, as shown in FIG. 8F, the liquid crystal panel on which the polymer material layer (182 of FIG. 8E) is formed is dried by heating through a heating device (not shown) such as a furnace or oven. The process proceeds to volatilize and remove the solvent to have a thickness of about 500 kPa to 10,000 kPa, and the sheet resistance is about several tens of MΩ / sq to several GΩ / sq to form the antistatic layer 183.

At this time, the drying step is preferably 100 ° C or less, more preferably in a temperature atmosphere of about 50 ° C to 80 ° C. The drying process in this temperature range prevents the seal pattern of the liquid crystal panel from bursting due to volume expansion of the liquid crystal layer 190, and the liquid crystal layer 190 is exposed to a high temperature atmosphere of 100 ° C. or higher. This is to prevent the display quality of changing the liquid crystal phase from being lowered.

Next, the UV curable binder is irradiated with UV light to the antistatic layer 183 from which the solvent has been removed through a drying process using a UV device 198, thereby internally crosslinking in response to the UV light. ) To improve the bonding strength with the conductive material so that the hardness is 5H or more.

Next, as shown in Figure 8g, the cross-linking (cross-linking) of the UV binder is made, the internal bonding force is increased, the sol-gel (sol-gel) method on the antistatic layer 183, the hardness of which is 5H or more The silica material layer 185 is formed by coating silica in a sol state prepared by using a spin coating apparatus (not shown) or a slit coating apparatus 196 on the entire surface thereof.

Thereafter, the liquid crystal panel on which the silica material layer 185 is formed is subjected to heat treatment using a heating apparatus (not shown) such as a furnace or an oven, thereby forming an inside of the sol material layer. By volatilizing the dispersant, a gel silica layer (not shown) is formed, and the heat treatment process is continuously continued for a predetermined time to completely cure the gel silica layer to obtain a thickness of about 50 kPa to 1000 kPa. The moisture permeation prevention film 186 which has is formed.

Next, as shown in FIG. 8H, the liquid crystal panel in which the antistatic layer 183 and the moisture barrier layer 186 are formed is subjected to a cleaning process including a blade or brush process, and then the module process is performed to the array. The polarizing plate is attached to the outermost surfaces of the substrate 101 and the color filter substrate 171, respectively, and the x sensing wiring (not shown) and y sensing are performed for each touch block (TB) line in the non-display area of the array substrate 101. A plurality of X direction sensing circuits (not shown) and y direction sensing circuits (not shown) are mounted to be connected to the wiring ysl, and further, a driving circuit board (not shown) connected to the gate and data wirings (not shown) 130. By mounting the light emitting device, the light weight and thin touch recognition transverse electric field liquid crystal display device 100 according to the manufacturing method of the second embodiment of the present invention is completed.

100: transverse electric field type liquid crystal display device 101: first insulating substrate (array substrate)
113: semiconductor layers 113a and 113b: first and second semiconductor regions
116: gate insulating film 123: interlayer insulating film
125 semiconductor layer contact hole 130 data wiring
133: source electrode 136: drain electrode
140: first protective layer 145: second protective layer
150 common electrode 155 third protective layer
160 pixel electrode 171 second insulating substrate (color filter substrate)
173: Black matrix 175: color filter layer
183: antistatic layer 186: moisture barrier film
190: liquid crystal layer
P: Pixel area TB: Touch block
Tr: thin film transistor xsl: x sensing wiring

Claims (20)

A liquid crystal layer is provided between the first substrate and the second substrate facing the first substrate, and both the common electrode and the pixel electrode are provided on the inner surface of the first substrate, and the color filter layer is provided on the inner surface of the second substrate. A panel;
An antistatic layer formed on the outer surface of the second substrate of the liquid crystal panel with a first thickness of a mixed material of a conductive polymer material and a UV curable binder such that sheet resistance is several tens of MΩ / sq to several GΩ / sq;
A moisture barrier film which covers the antistatic layer and has a second thickness on the entire surface of the second substrate.
Transverse electric field type liquid crystal display device comprising a.
The method of claim 1,
The transmissive film is a transverse electric field type liquid crystal display device characterized in that the silica material.
The method of claim 1,
The conductive polymer material is polyaniline, polyedene (poly (3,4-ethylenedioxythiophene)), polyacetylene, polypyrrole, polythiophene, polysulfonitride Which one,
The UV-curable binder is any one of acrylate (Acrylate), urethane acrylate oligomer (Urethane Acrylate Oigomer), acrylate monomer (Acrylate Monomer).
The method of claim 3, wherein
And the weight% ratio of the conductive polymer material and the UV-curable binder in the mixture is 0.05: 99.5 to 10:90.
The method of claim 3, wherein
The mixture includes a trimethlolpropane triacrylate (TMPTA) as a multi-function monomer.
The method of claim 5, wherein
And the content ratio of the multifunctional monomer is 0.5% or less of the weight% of the UV-curable binder.
The method of claim 1,
The first thickness is 500 kPa to 10,000 kPa,
The second thickness is 50 kPa to 1,000 kPa,
And the second thickness is 1/10 to 1/200 of the first thickness.
The method of claim 1,
The antistatic layer has a hardness greater than 5H, and the moisture barrier layer has a hardness greater than 6H.
The method of claim 1,
In the first and second substrates, a display area having a plurality of touch blocks in which a plurality of pixel areas are grouped and a non-display area outside the display area are defined.
The gate and data lines formed to cross each other at a boundary of each pixel region on the first substrate;
A thin film transistor connected to the gate and data line in each pixel area;
A first protective layer formed on a front surface of the thin film transistor;
The common electrode formed to be spaced apart from each touch block on the first passivation layer;
An x sensing wiring formed on the common electrode to overlap the gate wiring and a y sensing wiring formed on the common electrode and overlapping the data wiring;
A second passivation layer formed over the common electrode, over the x sensing wiring and the y sensing wiring, and having a drain contact hole exposing the drain electrode of the thin film transistor;
The pixel electrode contacting the drain electrode through the drain contact hole on the second passivation layer and formed for each pixel region, the pixel electrode having a plurality of openings;
A black matrix formed at a boundary of each pixel region on an inner surface of the second substrate;
The color filter layer overlapping the black matrix and disposed to sequentially correspond to the red, green, and blue color filter patterns corresponding to each pixel area.
Transverse electric field type liquid crystal display device comprising a.
The method of claim 9,
In the non-display area of the first substrate,
An x direction sensing circuit is provided at the end of the x sensing wiring arranged on the same line in the extending direction of the gate wiring,
And a y-direction sensing circuit is provided at an end of the y-sensing wiring arranged on the same line in the extension direction of the data line.
Forming a gate wiring, a data wiring, a thin film transistor, a common electrode, and a pixel electrode connected to the thin film transistor on the inner surface of the first substrate;
Coating a polymer solution mixed with a conductive polymer material, a UV-curable binder and a solvent on the entire outer surface of the second substrate facing the first substrate and has a first thickness and a sheet resistance of several tens of MΩ / sq to several GΩ / sq. Forming an antistatic layer;
Forming a moisture barrier film having a second thickness over the antistatic layer;
Forming a black matrix and a color filter layer on an inner surface of the second substrate on which the moisture barrier film is formed;
Positioning the first and second substrates so that the pixel electrode and the color filter layer face each other, and bonding the first and second substrates through a liquid crystal layer.
Method of manufacturing a transverse electric field type liquid crystal display device comprising a.
The method of claim 11,
The first thickness is 500 kPa to 10,000 kPa,
The second thickness is 50 kPa to 1,000 kPa,
And the second thickness is formed to be 1/10 to 1/200 of the first thickness.
Forming a gate wiring, a data wiring, a thin film transistor, a common electrode, and a pixel electrode connected to the thin film transistor on the inner surface of the first substrate;
Forming a black matrix and a color filter layer on an inner surface of the second substrate facing the first substrate;
Positioning the first and second substrates so that the pixel electrode and the color filter layer face each other, and bonding the first and second substrates to each other through a liquid crystal layer to form a liquid crystal panel having a first thickness;
Exposing the liquid crystal panel to a chemical solution to etch the outer surfaces of the first and second substrates so as to have a second thickness thinner than the first thickness;
Coating a polymer solution mixed with a conductive polymer material, a UV curable binder, and a solvent to be etched to have a third thickness on the entire outer surface of the second substrate of the liquid crystal panel having the second thickness, and a sheet resistance of several tens of MΩ / sq. Forming an antistatic layer ranging from several G 수 / sq;
Forming a moisture barrier film having a fourth thickness over the antistatic layer;
Method of manufacturing a transverse electric field type liquid crystal display device comprising a.
The method of claim 13,
The third thickness is 500 kPa to 10,000 kPa,
The fourth thickness is 50 kPa to 1,000 kPa,
And the fourth thickness is formed to be 1/10 to 1/200 of the first thickness.
14. The method according to claim 11 or 13,
Forming the moisture barrier film,
Coating a silica layer in a sol state over the antistatic layer through a spin coating apparatus or a slit coating apparatus to form a silica material layer;
Heat-treating the silica material layer to remove the dispersant contained in the sol silica, thereby forming a gel silica layer and simultaneously curing the gel silica layer.
Method of manufacturing a transverse electric field type liquid crystal display device comprising a.
14. The method according to claim 11 or 13,
And improving the hardness of the antistatic layer by irradiating UV light to the antistatic layer before forming the moisture barrier layer.
14. The method according to claim 11 or 13,
The coating is a method of manufacturing a transverse electric field type liquid crystal display device, characterized in that is carried out through any one of a spin coating apparatus or a slit coating apparatus in an atmosphere of room temperature.
14. The method according to claim 11 or 13,
The conductive polymer material is polyaniline, polyedene (poly (3,4-ethylenedioxythiophene)), polyacetylene, polypyrrole, polythiophene, polysulfonitride Which one,
The UV-curable binder is any one of an acrylate (Acrylate), urethane acrylate oligomer (Urethane Acrylate Oigomer), acrylate monomer (Acrylate Monomer) characterized in that the manufacturing method of the transverse field-type liquid crystal display device.
14. The method according to claim 11 or 13,
And after the coating of the polymer solution, drying the antistatic layer by heating through a heating means.
14. The method according to claim 11 or 13,
Forming an x sensing line overlapping the gate line and a y sensing line overlapping the data line on an inner surface of the first substrate;
Mounting an x-direction sensing circuit connected to an end of the x sensing wiring and a y-direction sensing circuit connected to an end of the y sensing wiring in a non-display area of the inner surface of the first substrate;
Method of manufacturing a transverse electric field type liquid crystal display device comprising a.

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