KR20110086540A - Method of selective film etching with fluorine compound - Google Patents

Method of selective film etching with fluorine compound Download PDF

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Publication number
KR20110086540A
KR20110086540A KR1020110069154A KR20110069154A KR20110086540A KR 20110086540 A KR20110086540 A KR 20110086540A KR 1020110069154 A KR1020110069154 A KR 1020110069154A KR 20110069154 A KR20110069154 A KR 20110069154A KR 20110086540 A KR20110086540 A KR 20110086540A
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South Korea
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gas
fluorine compound
film
etching
membrane
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KR1020110069154A
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Korean (ko)
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조인숙
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조인숙
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream

Abstract

PURPOSE: A selective film etching method using a fluorine compound is provided to perform secondary annealing and oxygen passivation in oxygen using remote plasma, thereby preventing additional reactions and contamination due to a remaining gas and a contaminant. CONSTITUTION: A membrane is made of a nitride film and an oxide film. The membrane is selectively eliminated under a vacuum condition. A membrane is selectively eliminated using an ammonia gas and at least one fluorine compound gas. A vacuum chamber controls pressure to have the range of 0.1 to 400 Torr. A contaminated part is purged using an inert gas to minimize contamination due to a gas which generates corrosion.

Description

Selective film etching method using fluorine compound {Method of selective film etching with fluorine compound}

The present invention relates to a method for selectively etching a film formed of an oxide film, a nitride film, or a mixture thereof formed on the surface of a silicon wafer used in a semiconductor device manufacturing process. It relates to a non-side effect (Damage free) film etching method of the device by a third etching method. In the case of the conventional etching method using high density plasma (High Density Plasma), it is used to selectively etch different films because it can have desired selection ratio by combination of gases used, but it is mainly used for plasma attack Due to the problem of device reliability due to Plasma Attack, these films have been removed by wet cleaning. However, a problem arises due to the phenomenon of lining (a phenomenon in which films having a specific aspect ratio or more adhere to each other as they dry), which occurs as the design rule is reduced due to the high integration of devices. In addition, in the case of wet cleaning, even in the case of a similar film, since the difference in selection ratio is large, it is easy to control the selection ratio, and development of an etching technique without damage is required. The present invention relates to a technique capable of preventing such a problem.

The semiconductor manufacturing process is currently being processed in a micro-design environment of 20 nanoscale, and it is time to change the cleaning and etching technologies to realize such a line width. As is known, in the case of wet cleaning, it is difficult to etch certain parts due to the too high selection ratio between the lining and the membrane of the lining.How to solve the problem, it is easy to use the conventional dry etching. As can be seen, in the case of dry etching, due to the problem of the reliability of the device due to the use of high-density plasma, the use of certain types, especially at the gate level, is prohibited, requiring a new type of etching method. In addition, the insulating layer (IMD) used to reduce the line width is also used in various types of combinations with different physical properties, so that a film layer composed of a lining-free, damage-free oxide film, a nitride film, or a combination thereof is used. There is a need to develop a process that effectively removes at a low selectivity. As such techniques, a gas phase etching method combining NF3 and NH3 gas and a gas phase etching method combining HF and NH3 gas are introduced and used. Having patent rights abroad, there is an urgent need for the development and invention of technologies that can be used in Korea.

The present invention is to solve the conventional problems, to provide an effective method that does not damage the wafer surface (Damage Free), there is no problem of lining (Leaning Free), low selectivity between the films.

In order to achieve the above object, the present invention uses a florin compound under general vacuum process conditions for etching of free lining, selectively uses NH3 gas to control the selectivity between the membranes, and adds an inert gas. To control the etching amount more precisely. In addition, in the case of a process requiring a higher etching amount, in order to increase the etching amount, it is characterized by employing a remote plasma whose intensity can be adjusted instead of the existing high density plasma. Annealing and passivation are performed in a remote plasma environment in an oxygen or nitrogen atmosphere to prevent further reaction or contamination.

By proceeding the process in the method according to the present invention can solve the existing problems and also provide a foundation to develop more effective and economical equipment than the existing foreign equipment.

Figure 1. Configuration of the vacuum chamber

  The features and advantages of the present invention will become more apparent from the following detailed description. Prior to this, the terms or words used in the present specification and claims are defined in the technical spirit of the present invention on the basis of the principle that the inventor can appropriately define the concept of the term in order to explain his invention in the best way. It must be interpreted to mean meanings and concepts.

In the configuration for carrying out the present invention, a general cluster type transport system and a vacuum chamber are configured. In the case of the configuration, the shape of the general vacuum equipment is not the same as the configuration of the multi-chamber sheet type CVD equipment, which is generally used in general, and is not shown in a separate drawing. These features are detailed in patent registration number 100931765, registered by Republic of Korea.

In the vacuum chamber, the pressure is generally controlled to be in the range of 0.1 to 400 Torr, and the object to be etched through the shower head so that the gas can be evenly distributed through the passage where gas can be injected through the upper gas distributor. To be passed to the structure.

In the chamber, inert gas is used to purge the part to be polluted to minimize contamination due to highly corrosive gas, and Ar or He is preferable as an inert gas used therein. It also raises the temperature of the walls of the chamber in a common way to minimize contamination. The temperature of the chamber is 60 ± 20 ℃, which is the temperature of general equipment, and the temperature at which the wafer is placed is the temperature at which (NH4) 2SiF4, which is a mixture of NH3 and florin, which controls the selectivity, can be formed. Phosphorus is adjusted to 30 ± 20 ° C.

As an example of a fluorine compound, xenon fluoride (XeFx) may be used, and may be used as a combination of gases that are already commercialized. Combination of gases creates a mixed gas atmosphere in a chamber by injecting two or more gases simultaneously or alternately. Examples of gases that can form a florin compound used therein include xenon compounds such as XeF2, XeF4, NF3, HF, F2 and the like, and the fluorine compound and NH3 gas are injected into the chamber in the chamber atmosphere to perform etching.

Once the desired etching is done, the series of etching process is completed by sublimating (NH4) 2SiF4.

  In this process, the film is removed and at the same time, a corresponding mixture of NH3 and Florin (NH4) 2SiF4 is formed, which can cause etching stop (no further etching due to accumulation of compounds). In this case, the compound may be sublimed by applying a temperature of 200 ± 20 ° C., which is the temperature at which the compound is sublimed, to the wafer surface, and then etching again by injecting a gas. Will be

However, even after this process is complete, residual gases or contaminants can cause the reactions on the wafer surface to continue, resulting in secondary annealing and oxygen in an oxygen atmosphere using a remote plasma to prevent this. Passivation (termination of O or O2 in the vacancies of the lattice pattern to form SiO2 to protect it from further contamination) or hydrogen passivation using a hydrogen atmosphere remote plasma The process will complete the present invention. The temperature of the wafer used for secondary annealing and passivation is within 20 to 300 ° C., preferably 200 ± 20 ° C.

None.

Claims (8)

A method for selectively removing a film quality by using at least one fluorine compound gas in addition to NH3 gas as a gas for removing film quality in a step of selectively removing a film quality consisting of a nitride film, an oxide film or a combination thereof in a vacuum atmosphere.
The method of claim 1, wherein when one gas is used as the fluorine compound used with NH3, xenon compound (XeFx) or F2 gas is used as the one gas.
The method of claim 1, wherein a combination of XeFx, F2, NF3, HF is used as the target gas when one or more fluorine compounds are used as NH3.
The method of claim 1, wherein a remote plasma of an oxygen or hydrogen atmosphere is used in the secondary treatment after the etching process is completed.
In the process of selectively removing the film quality consisting of a nitride film, an oxide film or a combination thereof in a vacuum atmosphere, at least one fluorine compound gas other than NH3 gas is used as a gas removing film quality. Optional decontamination using an adjustable remote plasma.
The method of claim 5, wherein when one gas is used as the fluorine compound used with NH3, xenon compound (XeFx) or F2 gas is used as the one gas. The method of claim 5, wherein a combination of XeFx, F2, NF3, and HF is used as a target gas when one or more fluorine compounds are used as NH3. 6. The method of claim 5, wherein a remote plasma of an oxygen or hydrogen atmosphere is used in the secondary treatment after the etching process is completed.



KR1020110069154A 2011-07-12 2011-07-12 Method of selective film etching with fluorine compound KR20110086540A (en)

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