KR20110076415A - Composition for negative liquid photoimageable - Google Patents

Composition for negative liquid photoimageable Download PDF

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Publication number
KR20110076415A
KR20110076415A KR1020090133117A KR20090133117A KR20110076415A KR 20110076415 A KR20110076415 A KR 20110076415A KR 1020090133117 A KR1020090133117 A KR 1020090133117A KR 20090133117 A KR20090133117 A KR 20090133117A KR 20110076415 A KR20110076415 A KR 20110076415A
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KR
South Korea
Prior art keywords
composition
weight
liquid photoresist
binder polymer
phosphate
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KR1020090133117A
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Korean (ko)
Inventor
조승제
Original Assignee
코오롱인더스트리 주식회사
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Priority to KR1020090133117A priority Critical patent/KR20110076415A/en
Publication of KR20110076415A publication Critical patent/KR20110076415A/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0047Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

The present invention relates to a composition for a negative liquid photoresist, specifically, by increasing the viscosity of the liquid photoresist, it is possible to apply to a roller coating or a dip coating method while maintaining the excellent circuit properties.

Negative, liquid photoresist, viscosity, roller coating

Description

Composition for negative liquid photoresist {COMPOSITION FOR NEGATIVE LIQUID PHOTOIMAGEABLE}

The present invention relates to a composition for negative liquid photoresist.

Negative liquid photoresist is characterized by excellent fine wire adhesion and resolution compared to dry film, but many negative liquid photoresists do not exhibit such characteristics. For this reason, if the liquid photoresist is uniformly applied on the substrate by a roller coating method or a dip coating method, there should be no defects such as pin holes and Bernard cells. This is because the photoresist has poor coating properties and film defects such as pinholes and Bernard cells are generated.

Fine line adhesion and resolution are opposite to each other. To improve fine line adhesion, the unexposed areas are developed, that is, the lines of fine width exposed during complete washing should be attached without falling off from the copper plate even with small exposure. Unexposed areas should be removed quickly when developing. However, if the viscosity is high, the resist is not removed quickly at the boundary, resulting in a drop in resolution. In other words, the resist between the exposed portion and the unexposed portion has to have a large difference in developability under a certain developing condition so that a resist having excellent fine line adhesion and resolution can be made.

In order to satisfy these properties at the same time, a resist composition such as a binder polymer or a photopolymerization monomer should be made to have good adhesiveness with the copper plate and have appropriate developability with respect to the developer. U.S. Patent Nos. 6037100, 6261595, 6134249, and 5935761 describe contents to solve such technical problems and to improve fine line adhesion and resolution, but they do not achieve the expected results. .

The present invention provides a negative type liquid photoresist composition having excellent circuit properties while being applicable to roller coating or dip coating by increasing the viscosity of the liquid photoresist.

One embodiment of the present invention is a negative liquid photoresist composition comprising a binder polymer, a photopolymerization monomer and a photopolymerization initiator, the negative type comprising 4 to 50 parts by weight of polyvinylpyrrolidone based on 100 parts by weight of the binder polymer It is a composition for liquid photoresists.

According to another embodiment of the present invention, the composition is a composition for a negative liquid photoresist having a viscosity of 1,200 cps or more at 25 ° C.

Another embodiment of the present invention is a composition for a negative liquid photoresist comprising 30 to 80 parts by weight of the photopolymerization monomer and 5 to 40 parts by weight of the photopolymerization initiator based on 100 parts by weight of the binder polymer.

According to another embodiment of the present invention, the binder polymer has a glass transition temperature (Tg) of 70 to 150 ° C, an acid value of 40 to 200 mgKOH / g, and a weight average molecular weight (Mw) of 20,000 to 60,000. It is a composition for type | mold liquid photoresist.

The negative type liquid photoresist composition according to the present invention increases the viscosity of the liquid photoresist and has an advantage of maintaining excellent circuit properties while being applicable to roller coating or dip coating.

According to one embodiment of the present invention, in the negative liquid photoresist composition comprising a binder polymer, a photopolymerization monomer and a photopolymerization initiator, the polyvinylpyrrolidone is included in an amount of 4 to 50 parts by weight based on 100 parts by weight of the binder polymer. It is to provide a composition for negative liquid photoresist.

In the liquid photoresist composition, a thickener may be added to improve the coating property. A general thickener commonly used in general is an alkali type, and the thickening effect is excellent, but it cannot be used in a negative liquid photoresist composition. The reason is that when a pattern is formed using a negative liquid photoresist, a developing process of melting an unexposed portion in a weak alkali developer is used. Among the components of the negative liquid photoresist composition, the binder polymer is weakly acidic. Use a high acid value. Adding an alkali thickener to the negative liquid photoresist composition lowers the stability of the negative liquid photoresist composition, thereby changing the color or causing gelation during storage of the negative liquid photoresist composition. there is a problem.

In the present invention, the composition for negative liquid photoresist includes polyvinylpyrrolidone, and the polyvinylpyrrolidone has very low alkalinity because the amino group of vinyl pyrrolidone has an amide pentagonal ring structure. It has a base dissociation constant (pKb) of 11 or more and a pH of 7 to 9, which does not affect the physical properties or storage stability of the composition for negative liquid photoresist, and thus is suitable for a composition for negative liquid photoresist. By providing a viscosity to improve the coating properties to ensure stability and to prevent the gelation phenomenon during storage.

The composition comprising the polyvinylpyrrolidone described above may have a viscosity of 1,200 cps or more, preferably 1,200 to 4,000 cps, more preferably 1,800 to 3,000 cps at 25 ° C.

As the density of printed circuit boards (PCBs) and semiconductor packaging technologies have been advanced, the density of circuit lines has been increased, and the demand for liquid photoresists having excellent resolution and adhesion necessary to form microcircuits is increasing. In order to use the liquid photoresist, a coating machine is required, and the viscosity of each liquid photoresist is determined according to the coating machine.

In order to have such a viscosity, a thickener may be added to the liquid photoresist. Most of the thickeners are not applicable to a roll coater because the stability of the negative liquid photoresist is reduced when the alkali type thickener is used as the alkali type.

In the present invention, it may have a level of viscosity suitable for use in a roll coater, including polyvinylpyrrolidone satisfying the above conditions.

The content of the polyvinylpyrrolidone is 4 to 50 parts by weight, preferably 15 to 30 parts by weight based on 100 parts by weight of the binder polymer. When the content of the polyvinylpyrrolidone is within the above range, the independent resolution and 1/1 (L / S) resolution of the circuit properties are improved, and the long-term storage stability is also improved to discolor the color of the product or to gel the ink. The effect of preventing the defect can be obtained.

Examples of the binder polymer include acrylic resins, polyester resins, polyurethane and epoxy resins, and acrylic resins may be used in terms of price and workability.

A methacryl copolymer is mentioned as said acrylic resin.

As said methacryl copolymer, the methacryl copolymer containing an acetoacetyl group is mentioned. Methacrylic monomers usable for polymerizing the methacryl copolymer include methyl methacrylate, methyl methacrylate, propyl methacrylate, and butyl methacrylate. Butyl methacrylate, hexyl methacrylate, 2-ethylhexyl methacrylate, cyclohexyl methacrylate, benzyl methacrylate, dimethyl Aminoethyl methacrylate (dimethylaminoethyl methacrylate), hydroxy methacrylate (hydroxyethyl methacrylate), hydroxypropyl methacrylate (hydroxypropyl methacrylate), glycidyl methacrylate (glycidyl methacrylate), etc. are mentioned.

The methacryl copolymer may be used by copolymerizing with ethylenically unsaturated carboxylic acid or other monomers.

The ethylenically unsaturated carboxylic acid may include monoacrylic acid such as acrylic acid, methacrylic acid, crotonic acid, and the like, and maleic acid. (maleic acid, fumaric acid, dicarboxylic acid such as itaconic acid, or anhydrides thereof, or half esters thereof; In the case of using methacrylic acid, acrylic acid and methacrylic acid may be used in view of easy acid value control and polymerization ease with acrylic monomer.

When the binder polymer is a weak alkali developing type, the content of the ethylenically unsaturated carboxylic acid is 6 to 30% by weight, and the acid value of the ethylenically unsaturated carboxylic acid is preferably 40 to 200 mg KOH / g.

Other monomers include acrylamide, methacrylamide, acrylonitrile, methacrylonitrile, styrene, α-methylstyrene, and vinyl acetate. acetate), alkyl vinyl ethers, and the like.

The negative liquid photoresist is dried at 80 ° C. for about 10 to 20 minutes, and the liquid photoresist after drying should have a hardness of H or higher. In order for the hardness of the resist to have a value of H or more after drying, the glass transition temperature (Tg) of the binder polymer must be at least 70 ° C. This is because the entire photoresist composition contains not only a binder polymer but also a low molecular weight compound such as a photopolymerization monomer, so that the glass transition temperature of the entire composition in which they are mixed is significantly lower than the glass transition temperature of the binder polymer alone.

In this regard, the binder polymer according to the present invention preferably has a glass transition temperature (Tg) of 70 to 150 ° C. If the glass transition temperature of the binder polymer is less than 70 ℃ problem occurs that the hardness of the resist is lowered, and if it exceeds 150 ℃ the resist is too hard to break and peeling (peeling) may occur during etching and plating Defects such as underplating may occur.

The binder polymer acts as a very important factor not only glass transition temperature, but also molecular weight and acid value. If the molecular weight is too small, fine wire adhesion and etching resistance are lowered.

Also, if the acid value is too low, it will not be developed. If the acid value is too high, the developing speed will be too high. Therefore, the binder polymer according to the present invention has a glass transition temperature (Tg) of 70 to 150 ° C, an acid value of 40 to 200 mgKOH / g, and a weight average molecular weight in order to obtain a suitable developing speed, resolution and hardness after drying. It is preferable that (Mw) is 20,000 to 60,000, and specific examples thereof include acrylic acid ester polymers dissolved in a propylene glycol monomethyl ether acetate (PGMEA) solvent.

Examples of the photopolymerizable monomer include monofunctional monomers and polyfunctional monomers as ethylenically unsaturated compounds.

The monofunctional monomers include 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, 2-hydroxybutyl methacrylate and 2-hydroxybutyl methacrylate. 2-phenoxy-2-hydroxypropyl methacrylate, 2-methacryloyloxy-2-hydroxypropyl phthalate, 2-methacryloyloxy-2-hydroxypropyl phthalate, 3-chloro-2-hydroxypropyl methacrylate, glycerin monomethacrylate, 2-methacryloyloxyethyl acid phosphate And methacrylates of phthalic acid derivatives, N-methylol methacrylamide, and the like.

The polyfunctional monomers include ethylene glycol dimethacrylate, ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, and propylene glycol dimethacrylate. (propylene glycol dimethacrylate), polypropylene glycol dimethacrylate, butylene glycol dimethacrylate, neopentyl glycol dimethacrylate, 1,6-hexane 1,6-hexane glycol dimethacrylate, trimethylolpropane trimethacrylate, glycerin dimethacrylate, pentaerythritol dimethacrylate, penta Erythritol trimethacrylate (pentaerythritol trimethacrylate) ), Dipentaerythritol pentamethacrylate, 2,2-bis (4-methacryloxydiethoxyphenyl) propane (2,2-bis (4-methacryloxydiethoxyphenyl) propane), 2-hydroxy- 2-methacryloyloxypropyl methacrylate, ethylene glycol diglycidyl ether dimethacrylate, diethylene glycol diglycidyl ether di Methacrylate (diethylene glycol diglycidyl ether dimethacrylate), phthalic acid diglycidyl ester dimethacrylate (glyceric polyglycidyl ether polymethacrylate), and the like. .

The monofunctional monomer can be used together with the monofunctional monomer, it can be used by appropriately adjusting the content according to any purpose.

The photopolymerization monomer is preferably included in 30 to 80 parts by weight based on 100 parts by weight of the binder polymer. When the content of the photopolymerizable monomer is less than 30 parts by weight, the phenomenon is extremely slow, and the workability is poor, and circuit properties such as fine wire adhesion and resolution are poor. The photoresist layer becomes sticky and cannot be exposed.

The photopolymerization initiator is benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin n-butyl ether, benzo Benzoin phenyl ether, benzyl diphenyl disulfide, benzyl dimethyl ketal, anthraquinone, naphthoquinone, 3,3-dimethyl-4-meth Methoxybenzophenone (3,3-dimethyl-4-methoxybenzophenone), benzophenone, p, p'-bis (dimethylamino) benzophenone (p, p'-bis (dimethylamino) benzophenone), p, p ' -Bis (diethylamino) benzophenone (p, p'-bis (diethylamino) benzophenone), p, p'-diethylaminobenzophenone (p, p'-diethylaminobenzophenone), pivalone ethyl ether , 1,1-dichloroacetophenone, pt-butyldichloroacetophenone, hexaaryl-already Dimer of hexaaryl-imidazole, 2,2'-diethoxyacetophenone, 2,2'-diethoxy-2-phenylacetophenone (2,2'-diethoxy 2-phenylacetophenone), 2,2'-dichloro-4-phenoxyacetophenone, 2,2'-dichloro-4-phenoxyacetophenone, phenyl glyoxylate, α-hydroxyisobutylphenone -hydroxy isobutylphenone), dibenzospan, 1- (4-isopropylphenyl) -2-hydroxy-2-methyl-1-propanone (1- (4-isopropylphenyl) -2-hydroxy-2- methyl-1-propanone), 2-methyl- [4- (methylthio) phenyl] -2-morpholino-1-propanone (2-methyl- [4- (methylthio) phenyl] -2-morpholino-1 -propanone, tri-bromophenylsulfone, tribromomethylphenylsulfone, etc. are mentioned.

The photopolymerization initiator based on 100 parts by weight of the binder polymer It is preferably included in 5 to 40 parts by weight. When the content of the photopolymerization initiator is less than 5 parts by weight, a large amount of exposure is required, and the exposure work time is significantly longer. When the content of the photopolymerization initiator is more than 40 parts by weight, a lot of fumes are generated by the photoinitiator during drying, causing contamination. During the exposure, the lighting time of the lamp becomes too short, resulting in partial light quantity on the substrate, resulting in poor exposure.

Meanwhile, the composition for negative liquid photoresist according to the present invention may further include a softening agent.

The softener is compatible with the photoresist composition and should be used that does not interfere with the film formation when coating the photoresist composition, specific examples include plasticizers used as a softener such as vinyl chloride resin.

Specific examples of the plasticizer include dimethyl phthalate, diethyl phthalate, dibutyl phthalate, diheptyl phthalate, and dioctyl phthalate. dioctyl phthalate, diisodecyl phthalate, butylbenzyl phthalate, diisononyl phthalate, ethylphthalylethyl glycolate, dimethyl isophthalate, dichlorohexyl Phthalate (dichlorohexyl phthalate) and the like, esters of fatty acids or arimatic acid, such as dioctyl adipate, diisobutyl adipate, dibutyl adipate , Diisodecyl adipate, dibutyl diglycol adipate (dibutyl diglycol adipate), dibutyl sebacate (dibutyl sebacate), dioctyl sebacate (dioctyl sebacate) and the like.

Other plasticizers include glycerol triacetate, trimethyl phosphate, triethyl phosphate, tributyl phosphate, trioctyl phosphate, tributoxyethyl phosphate (tributoxyethyl phosphate), tris-chloroethyl phosphate, tris-dichloropropyl phosphate, triphenyl phosphate, tricresyl phosphate, trixylyl Phosphate (trixylenyl phosphate), cresyl diphenyl phosphate, octyl diphenyl phosphate, xylenyl diphenyl phosphate, trilauryl phosphate, tricetyl Tricetyl phosphate, tristearyl phosphate (tr istearyl phosphate, trioleyl phosphate, triphenyl phosphite, tris-tridecyl phosphite, dibutyl hydrogen phosphite, dibutyl-butyl Dibutyl-butyl phosphonate, di (2-ethylhexyl) phosphonate, 2-ethylhexyl-2-ethylhexyl phosphonate (2-ethylhexyl-2-ethylhexyl phosphonate, methyl acid phosphate, isopropyl acid phosphate, butyl acid phosphate, dibutyl acid phosphate, monobutyl acid phosphate , Octyl acid phosphate, dioctyl phosphate, isodecyl acid phosphate, monoisodecyl phosphate, decanoic acid phosphate canol acid phosphate).

In addition, the softening agent is glycerin, trimethylolpropane, ethylene glycol, ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, dipropylene. Dipropylene glycol may be used, and lower alkyl ethers, lower fatty acid esters, higher fatty acids or esters thereof, higher fatty alcohols or esters thereof may also be used.

The softener may be used in an appropriate amount depending on any purpose within the range that the coating property is not impaired. When the softening agent is included, the composition film is not brittle and flexible after coating, thereby obtaining an effect of preventing damage to a circuit due to physical impact on a work process.

Hereinafter, preferred examples and comparative examples of the present invention will be described. However, the following examples are only preferred embodiments of the present invention, and the present invention is not limited to the following examples.

Example  1 to 4 and Comparative example  1 to 2

To the composition as shown in Table 1 below to prepare a composition for a negative liquid photoresist according to a conventional method.

The negative liquid photoresist composition prepared above was measured by the following method, and the results are shown in Table 2 below.

1) Viscosity: The viscosity was measured using a Brookfield viscometer.

2) Exposure dose: The exposure dose under the artwork and the exposure machine Mylar film was measured.

3) Sensitivity: Measured in 21 steps.

4) Minimum development time: The time when the unexposed photoresist was completely removed from the developer was measured.

5) 1/1 resolution: diluted with propylene glycol monomethyl ether acetate solvent, spin coated, dried and exposed using Kolon artwork without neomask. Then, 1/1 resolution was measured using ZEISS Laser Scanning Microscope, and when 1/1 resolution was measured, the exposed part was completely attached to the copper layer without damage. The unexposed part was removed by the developer, and the value of the state where the copper plate was completely exposed was read.

6) Fine wire adhesion: After the development, read the minimum circuit that the circuit of the independent fine wire part does not break or have meandering.

7) Stability: Viscosity was periodically checked and coated while standing in an oven at 30 ° C. for 30 days to measure circuit properties.

Workshop temperature: 23 ± 2 ℃

PCB base size: 600mm × 400mm

Drying: 80 ℃, dried for 10 minutes

Coating thickness: 10㎛ (after drying)

Parallel light exposure machine: Perkin-ElmerTM OB7120 (5kW)

Artwork: High resolution artwork without protective neomask

Developer: 1.0 wt% Na 2 CO 3

Developer temperature: 30 ± 1 ℃

Break point: 50%

Developer Spray Pressure: 1.0 kgf / ㎠

The break point of 50% means that the minimum development time is measured and then developed for two hours of the minimum development time as a condition for developing to check the actual product or physical properties, for example, 4 times the minimum development time. When doubled, the break point is 25%.

ingredient Content (parts by weight) Example 1 Example 2 Example 3 Example 4 Comparative Example 1 Comparative Example 2 Binder polymer Acrylic ester
Polymer
100 100 100 100 100 100
Photopolymerization initiator Benzophenone 4 4 4 4 4 4 4,4- (bisdiethylamino) benzophenone 6 6 6 6 6 6 Toluenesulfonic acid
(Monohydrate)
4 4 4 4 4 4
Diamond Green GH
(Japan Hodogaya Co.)
2 2 2 2 2 2
Photopolymerization monomer APG-400 (Miwon Corporation) 20 20 20 20 20 20 BPE-500 (Miwon Corporation) 24 24 24 24 24 24 Polyvinylpyrrolidone 4 10 20 50 0 80 Solvent Propylene Glycol Monomethyl Ether Acetate 240 240 240 240 240 240

Binder polymer: The glass transition temperature (Tg) is 120 degreeC, the acid value is 140 mgKOH / g, and the weight average molecular weight (Mw) is 35,000.

Example Comparative example One 2 3 4 One 2 Viscosity
(cps, 25 ℃)
910 1,200 1,850 3,500 900 6,800
Exposure amount (mJ / ㎠) 120 120 120 120 120 120 Sensitivity 7 7 7 7 7 7 Minimum development time
(second)
15 15 15 16 15 20
1/1 Resolution (μm) 20 20 20 21 20 28 Fine wire adhesion (㎛) 16 16 16 18 16 24 stability
(After 30 days)
normal normal normal normal normal discoloration

As shown in Table 2, in Examples 1 to 4, a thickening effect for roll coating was obtained, and at the same level as Comparative Example 1, it was found to maintain excellent circuit properties and storage stability, and in Comparative Example 2 The viscosity of the vinylpyrrolidone was excessively increased, but it was found that there was a problem in that the physical properties and stability were significantly lowered.

All simple modifications or changes of the present invention can be easily carried out by those skilled in the art, and all such modifications or changes can be seen to be included in the scope of the present invention.

Claims (4)

In the negative liquid photoresist composition comprising a binder polymer, a photopolymerization monomer and a photopolymerization initiator, A composition for negative liquid photoresist comprising 4 to 50 parts by weight of polyvinylpyrrolidone based on 100 parts by weight of the binder polymer. The composition of claim 1, wherein the composition has a viscosity of at least 1,200 cps at 25 ° C. The negative type liquid photoresist composition of claim 1, comprising 30 to 80 parts by weight of the photopolymerization monomer and 5 to 40 parts by weight of the photopolymerization initiator based on 100 parts by weight of the binder polymer. The negative polymer of claim 1, wherein the binder polymer has a glass transition temperature (Tg) of 70 to 150 ° C, an acid value of 40 to 200 mgKOH / g, and a weight average molecular weight (Mw) of 20,000 to 60,000. Photoresist composition.
KR1020090133117A 2009-12-29 2009-12-29 Composition for negative liquid photoimageable KR20110076415A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2555541A1 (en) 2011-08-01 2013-02-06 Lg Electronics Inc. Apparatus and method for controlling display of information on a television

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2555541A1 (en) 2011-08-01 2013-02-06 Lg Electronics Inc. Apparatus and method for controlling display of information on a television

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