KR20110028417A

KR20110028417A - Electrophoretic display device and method of fabricating the same

Info

Publication number: KR20110028417A
Application number: KR1020090086192A
Authority: KR
Inventors: 권오남; 남승석
Original assignee: 엘지디스플레이 주식회사
Priority date: 2009-09-12
Filing date: 2009-09-12
Publication date: 2011-03-18

Abstract

PURPOSE: An electrophoretic display device and a method for fabricating the same are provided to enable the implementation of texts and full colored images without deterioration of resolution. CONSTITUTION: An insulating film is formed on a display region(DA) of an array substrate so that plural gate and data wires which define a pixel region(P) may cross each other. Each pixel region is connected to the gate and data wires. The pixel region comprises sequentially-laminated gate electrodes(103), a gate insulating film(110), an active layer(115a) made of pure amorphous silicon, a semiconductor film including an ohmic film(115c), and a thin film transistor(Tr) including source and drain electrodes(120,122).

Description

Electrophoretic display device and method of manufacturing the same {Electrophoretic display device and method of fabricating the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrophoretic display, and more particularly, to an electrophoretic display having a region capable of realizing full color in a display region for implementing a mono image and a method of manufacturing the same.

In general, liquid crystal displays, plasma displays, and organic field displays have become mainstream display devices. However, recently, various types of display devices have been introduced to satisfy rapidly changing consumer demands.

In particular, with the advancement and portability of the information usage environment, the company is accelerating to realize light weight, thin film, high efficiency and color video. As a part of this, research on electrophoretic display devices combining only the advantages of paper and existing display devices is being actively conducted.

The electrophoretic display device is in the spotlight as a next generation display device having an advantage of ease of portability, and unlike a liquid crystal display device, it does not require a polarizing plate, a backlight unit, a liquid crystal layer, etc., thereby reducing manufacturing costs.

Hereinafter, a conventional electrophoretic display device will be described with reference to the accompanying drawings.

1 is a view briefly showing a structure of the electrophoretic display to explain the driving principle.

As shown in the drawing, the conventional electrophoretic display device 1 includes an ink layer 57 interposed between the first and second substrates 11 and 36 and the first and second substrates 11 and 36. Include. The ink layer 57 includes a plurality of capsules 63 filled with a plurality of white pigments 59 and black pigments 61 charged through a condensation polymerization reaction.

Meanwhile, a plurality of pixel electrodes 28 connected to a plurality of thin film transistors (not shown) are formed in each pixel area (not shown) on the first substrate 11. That is, the plurality of pixel electrodes 28 are selectively applied with a positive voltage or a negative voltage, respectively. In this case, when the size of the capsule 63 including the white pigment 59 and the black pigment 61 is not constant, only a capsule 63 having a predetermined size may be selectively used.

Applying a voltage of positive or negative polarity to the ink layer 57 described above, the charged white pigments and black pigments 59 and 61 inside the capsule 63 are attracted toward opposite polarities. . That is, when the black pigment 61 moves upward, black is displayed. When the white pigment 59 moves upward, white is displayed.

Hereinafter, an electrophoretic display device according to the related art will be described in detail with reference to the accompanying drawings.

FIG. 2 is a schematic cross-sectional view of a conventional electrophoretic display device, and the same reference numerals are used for the same names as those of FIG. 1.

As shown in the drawing, the electrophoretic display device 1 according to the related art includes an ink layer interposed between the first and second substrates 11 and 36 opposingly bonded to each other and the first and second substrates 11 and 36. (57). The ink layer 57 has a first and second adhesive layers 51 and 53 made of a transparent material, and a common electrode 55 made of a transparent conductive material therebetween, and a condensation polymerization reaction. A plurality of charged black pigments 61 and white pigments 59 are attached in the form of a film together with a plurality of capsules 63 filled therein. In addition, the black pigment 82 is positively charged and the white pigment 84 is negatively charged.

The second substrate 36 is made of transparent plastic or glass, and the first substrate 11 is mainly made of an opaque stainless material, and if necessary, a transparent plastic material or glass is used. Can be.

On the other hand, a gate wiring (not shown) and a data wiring (not shown) are formed on the first substrate 10 to vertically intersect in a matrix to define the pixel region P. The gate wiring (not shown) and data are formed on the first substrate 10. The thin film transistor Tr, which is a switching element, is formed for each pixel region P at an intersection point of the wiring (not shown).

The thin film transistor Tr overlaps the gate electrode 14 extending from the gate line (not shown), the gate insulating layer 16 covering the gate electrode 14, and the gate electrode 14, and overlap the active layer. A semiconductor layer 18 composed of an 18a and an ohmic contact layer 18b, a source electrode 20 in contact with the semiconductor layer 18 and extending from a data line (not shown), and the source electrode 20 And a drain electrode 22 spaced apart from the drain electrode 22.

In addition, a passivation layer 26 including a drain contact hole 27 exposing the drain electrode 22 is formed on the entire surface of the thin film transistor Tr.

The pixel electrode 28 connected to the drain electrode 22 through the drain contact hole 27 on the passivation layer 26 corresponds to each pixel region P. As shown in FIG. The pixel electrode 28 is mainly composed of one selected from a transparent conductive material such as indium tin oxide (ITO) and indium zinc oxide (IZO).

The electrophoretic display device 1 having the above-described configuration uses a pixel light including external light including natural light or room light as a light source and is selectively applied with a positive polarity or a negative polarity by the thin film transistor Tr. (28) induces a positional change of the plurality of white pigments (59) and the black pigments (61) filled in the capsule (63) to implement an image or text.

On the other hand, although the electrophoretic display device having the above-described configuration is not shown in the figure, red, green, blue, and optionally white color filter patterns are formed on the pixel area P in front of the display area on the inner surface of the second substrate 36. Correspondingly, a color filter layer having a form of sequentially repeating may be further formed. In this case, when the color filter layer is included, an electrophoretic display device capable of realizing a full color image is provided, and when the color filter layer is not included, a monotype electrophoretic display device mainly displaying text is provided.

However, as described above, the mono type electrophoretic display cannot display a color image, and the full color electrophoretic display can display a color image, but three dots are defined as the minimum unit for displaying the full color. Alternatively, since the pixel is composed of four pixel areas, the resolution of the text is limited by fonts, and the reflectance and contrast ratio are relatively lower than those of the mono type electrophoretic display device by forming a color filter layer on the front of the display area.

In addition, the conventional electrophoretic display device forms a color filter layer on the second substrate and bonds it with the first substrate on which the electrophoretic film is attached. In order to prevent this, the width of the black matrix formed at the boundary of the pixel region should be large in consideration of the bonding margin, which causes a problem that the aperture ratio is lowered.

Disclosure of Invention The present invention has been made to solve the above-described problem, and an object thereof is to provide an electrophoretic display device and a method of manufacturing the same, which can implement text without degrading a resolution and implement full color images.

In addition, another object of the present invention is to improve the display quality and the aperture ratio by proposing a manufacturing method which can reduce the bonding error in forming the color filter layer.

An electrophoretic display device according to the present invention for achieving the above object is composed of a plurality of pixel areas, a first area capable of realizing full color, and a second area capable of realizing a mono type image. A substrate in which a display area and a non-display area around the display area are defined; Gate lines and data lines formed on the substrate to cross each other and define a plurality of pixel regions; A thin film transistor comprising a gate electrode, a gate insulating film, a semiconductor layer, and source and drain electrodes spaced apart from each other in a plurality of pixel regions connected to the gate line and the data line in a plurality of pixel regions; A protective layer including a drain contact hole exposing the drain electrode of the thin film transistor over the thin film transistor; A pixel electrode formed in each pixel region in contact with the drain electrode of the thin film transistor through the drain contact hole on the passivation layer; An electrophoretic film attached to the pixel electrode corresponding to the display area; A color filter layer formed on the electrophoretic film corresponding to the first region; A protective sheet covering the color filter layer and attached to the front surface of the electrophoretic film.

In this case, the electrophoretic film, the adhesive layer in contact with the pixel electrode, an ink layer consisting of a plurality of capsules filled with a plurality of white pigment and black pigment charged through a condensation polymerization reaction sequentially stacked thereon, transparent It is characterized by consisting of a common electrode and a base film.

In addition, the protective layer forms a single layer structure of an organic insulating material layer, or a double layer structure of an inorganic insulating material layer / organic insulating material layer, or an inorganic insulating material layer / organic insulating material layer / inorganic insulating material layer. It is characterized by forming a triple layer structure.

In addition, the color filter layer may include three color filter patterns of red, green, and blue, or four color filter patterns of red, green, blue, and white.

In addition, a storage capacitor is formed in each of the plurality of pixel regions, wherein the storage capacitor includes a common wiring formed to be spaced apart from the same layer as the gate wiring, and the common wiring overlapping each other by forming the drain electrode to overlap each other; A drain electrode is used as the first and second storage electrodes, respectively, and the gate insulating film interposed between the two electrodes is characterized by a dielectric layer.

A method of manufacturing an electrophoretic display device according to the present invention includes a display area including a plurality of pixel areas, a first area capable of realizing full color, a second area capable of realizing a mono type image, and A gate line and data line formed on a substrate on which a non-display area around the display area is defined to define each pixel area and connected to the gate line and the data line in each of the pixel areas Forming a thin film transistor comprising a gate electrode, a gate insulating film, a semiconductor layer, and source and drain electrodes spaced apart from each other in a stacked form; Forming a protective layer on the thin film transistor, the protective layer including a drain contact hole exposing the drain electrode of the thin film transistor; Contacting the drain electrode of the thin film transistor through the drain contact hole on the passivation layer to form a pixel electrode for each pixel region; Attaching an electrophoretic film on the pixel electrode corresponding to the display area; Forming a color filter layer on the electrophoretic film corresponding to the first region; Covering the color filter layer and attaching a protective sheet on the front surface of the electrophoretic film.

A cutting area is defined outside the non-display area on the substrate, and alignment of the color filter layer is formed on the cutting area in any one of the steps of forming the gate line and the data line or forming the pixel electrode. The mark may be formed, wherein the alignment marks for forming the color filter layers may be formed one by three in three regions in different directions around the display region. In addition, after the step of attaching the protective sheet includes the step of cutting by removing the cutting area.

The forming of the gate and data lines and the thin film transistor may include forming a storage capacitor, and forming the gate electrode connected to the common line and the gate line in parallel with the gate line; Forming the gate insulating film on the entire surface of the substrate over the gate wiring, the gate electrode, and the common wiring; Forming a semiconductor layer on the gate insulating layer, the semiconductor layer comprising an active layer of pure amorphous silicon and an ohmic contact layer of impurity amorphous silicon spaced apart from each other above the gate insulating layer; Forming a data line intersecting the gate line on the gate insulating layer, and forming a source electrode connected to the data line and a drain electrode spaced apart from the common line on the ohmic contact layer.

The electrophoretic display device according to the present invention has an effect of realizing full color in a specific area and realizing text without degrading resolution in a mono area by providing a partial and full-color realizable area in the display area and a mono realization area. In addition, there is an advantage in that the application field can be expanded and expanded by including a partial full color image realization area.

In addition, by forming the color filter layer directly on the electrophoretic film attached on the array substrate, an error range (± ± 5 μm) much smaller than the error range (typically ± 5 μm) when bonding the substrate with the color filter layer and the substrate with the array element 2 μm) minimizes misalignment due to the bonding error and further reduces the bonding margin, thereby improving the aperture ratio.

Hereinafter, an electrophoretic display device according to the present invention will be described with reference to the accompanying drawings.

Figure 3 is a plan view of the electrophoretic apparatus according to the present invention, Figure 4 is a cross-sectional view of the portion cut along the cutting line IV-IV. In FIG. 4, the thin film transistor and the storage capacitor are shown in only one pixel area. In addition, for convenience of description, the region in which the thin film transistor Tr is formed in each pixel region is defined as the storage region StgA and the region in which the switching region TrA and the storage capacitor StgC are formed.

As shown in the drawing, the electrophoretic display device 100 according to the present invention crosses each other and defines a plurality of pixel regions P and gate and data lines (not shown) and a thin film transistor Tr in each pixel region P. As shown in FIG. ), An electrophoretic film 167 including an array substrate 101, an ink layer 163, a common electrode 153, and a partial color filter layer 170, and a protective film 180. .

In this case, the most characteristic of the electrophoretic display device 100 according to the present invention is that the color filter layer 170 including the red, green, and blue color filter patterns R, G, and B has a front surface of the display area DA. This is characterized by being formed only corresponding to a part of the display area DA.

Referring to FIG. 3, the color filter layer 170 is formed only on the left side of the display area DA based on the center of the display area DA. However, the color filter layer 170 may be positioned at any position of the display area DA. All can be formed selectively. In this case, the color filter layer 170 may include three color filter patterns (R, G, B) of red, green, and blue, or four types of red, green, blue, and white, as shown in the drawing. It may also include a color filter pattern (not shown).

With this configuration, the electrophoretic display device 100 according to the present invention implements a full color image in a part of the display area DA (hereinafter, referred to as a first area A1) in which the color filter layer 170 is formed, and the color filter layer. In a portion of the display area DA (hereinafter, referred to as a second area A2) where no 170 is formed, text is implemented in a mono type without degrading the resolution.

Hereinafter, the cross-sectional structure of the electrophoretic display device according to the present invention having the above-described configuration will be described.

As shown in FIG. 4, a plurality of gates and data wires (not shown) defining the pixel area P by crossing each other through the gate insulating layer 110 in the display area DA of the array substrate 110. 119 is formed. In addition, a common wiring (not shown) made of the same metal material is formed on the same layer on which the gate wiring (not shown) is formed, and the first storage electrode 105 is branched from the common wiring (not shown). Is formed.

Next, each pixel region P is connected to the gate line (not shown) and the data line 119, and is sequentially stacked to form the gate electrode 103, the gate insulating layer 110, and the pure amorphous silicon. The thin film transistor Tr including the semiconductor layer 115 including the active layer 115a and the ohmic contact layer 115c of impurity amorphous silicon and the source and drain electrodes 120 and 122 spaced apart from each other are formed. In this case, the gate electrode 103 is connected to the gate wiring 112, and the source electrode 120 is connected to the data wiring 119. In this case, the drain electrode 122 extends into the storage area and overlaps the first storage electrode 105 so that the overlapped portion forms the second storage electrode 124, and the first storage electrode 105 and the second storage electrode 124. The storage electrode 124 and the gate insulating layer 110 interposed between the two electrodes 105 and 124 form a storage capacitor StgC.

Next, the thin film transistor Tr covers the thin film transistor Tr and has a drain contact hole 133 exposing a part of the drain electrode 122 of the thin film transistor Tr. The organic insulating material has a thickness of about 2 μm to 4 μm. To form a first protective layer 130 having a flat surface. In this case, although not shown in the drawings, a second protective layer (not shown) made of an inorganic insulating material may be further formed on the lower surface of the first protective layer 130 and the upper portion of the thin film transistor Tr. In this case, the second passivation layer (not shown) may protect the active layer 115a in which exposed channels are formed between the source and drain electrodes 120 and 122 spaced apart from each other in the thin film transistor Tr, and the source and Since it is to enhance the bonding property between the metal material such as the drain electrodes 120 and 122 and the first protective layer 130 made of the organic insulating material, it may be omitted.

Next, a transparent conductive material, for example, indium tin oxide (ITO) or indium zinc oxide (IZO), is disposed on the first passivation layer 130 to contact the drain contact hole 133 and each pixel area P. FIG. Each pixel electrode 140 is formed. At this time, although not shown in the drawing, a third protective layer (not shown) made of an inorganic insulating material is further formed between the pixel electrode 140 made of a transparent conductive material and the first protective layer 130 to enhance bonding characteristics. May be

Next, a base film 150 made of a material, for example, PET, having a transparent and flexible characteristic with respect to the array substrate 101 having the above-described configuration, and a common electrode 153 formed on the entire surface with a transparent conductive material on the lower surface thereof. ), An ink layer 163 including a plurality of capsules 160 filled with a plurality of white pigments 156 and a black pigment 158 charged through a condensation polymerization reaction at the lower portion thereof, and a first adhesive portion thereunder. An electrophoretic film 167 comprising layer 165 is attached.

In addition, as the most characteristic configuration of the present invention, the base film 150 may correspond to each pixel area P in order to correspond to a part of a desired position, that is, the first area A1, rather than the entire display area DA. The color filter layer 170 having red, green, blue, and optionally white color filter patterns (R, G, B, not shown) is formed. Although not shown in the drawing, a black matrix (not shown) is further formed between the color filter patterns R, G, and B and the patterns R, G, and B in the first region, that is, the boundary between the pixel regions. It may be configured.

Meanwhile, the base film 150 is still exposed in the second area A2 in which the color filter layer 170 is not formed in the display area DA.

Next, a protective film 180 is attached to the color filter layer 170 and the exposed base film 150 through a second adhesive layer (not shown) to protect the color filter layer 170. In this case, the protective film 180 may be attached using the second adhesive layer, or a seal pattern (not shown) is formed along the non-display area (NA of FIG. 3) outside the display area DA. It may be attached to the base film 150 by a seal pattern (not shown).

In the electrophoretic display device 100 having the above-described configuration, the color filter layer 170 is partially formed in the display area DA, so that the first area A1 in which the color filter layer 170 is formed may implement a full color image. The second region A2 in which the color filter layer 170 is not formed may have a mono type and may implement text without deterioration of resolution.

In the case of the electrophoretic display device 100 according to the present invention having a first area A1 partially capable of full color implementation and a second area A2 mainly displaying a mono type of text, an example of text and pictures is shown. It can be applied as a coexisting children's e-book. In this case, it is excellent in terms of text resolution compared to an electrophoretic display device that implements a full-color full-color image, and can partially display full-color images in a display area DA compared to a mono type electrophoretic display device without a color filter layer. Since a full-color screen can be provided through the first area A1 and has a first area A1, user convenience, visibility, and readability are excellent.

Hereinafter, a method of manufacturing an electrophoretic display device according to the present invention having the above-described configuration will be described.

Figures 5a to 5d is a plan view for each step of manufacturing the electrophoretic apparatus according to the present invention, Figures 6a to 6h is a cross-sectional view of the manufacturing step for the portion cut along the cutting line IV-IV. In this case, for convenience of explanation, an area including an image display area including the plurality of pixel areas P is defined as the display area DA and the outside thereof as a non-display area NA, and is finally cut out of the non-display area. The portion where the thin film transistor Tr is formed in the cut region CA, the pixel region P, and the switching region TrA and the region where the storage capacitor StgC is formed are defined as the storage region StgA. .

First, as shown in FIGS. 5A and 6A, a first metal material such as aluminum (Al), aluminum alloy (AlNd), and copper (Cu) may be formed on an insulating substrate 101, for example, a glass substrate or a plastic substrate. And depositing a copper alloy, chromium (Cr) and a titanium alloy to form a first metal layer (not shown), followed by application of photoresist, exposure using a mask, development of photoresist, etching and stripping of photoresist. A gate process (not shown) is formed to extend in one direction by performing a mask process including a process such as the same, and at the same time, a gate electrode 103 connected to the gate line (not shown) is formed in the switching region TrA. The first storage electrode 105 is formed in the storage area StgA. In this case, the first storage electrode 105 is formed as a part of the common wiring (not shown) by forming a common wiring (not shown) parallel to the gate wiring (not shown), or a front gate wiring (not shown). It may be done by itself. In the drawing, a common wiring (not shown) is formed, so that a portion of the common wiring (not shown) forms the first storage electrode 105 as an example.

Next, as shown in FIGS. 5A and 6B, an inorganic insulating material such as silicon oxide (SiO ₂ ) or the like may be disposed on the gate wiring (not shown), the gate electrode 103, and the first storage electrode 105. Silicon nitride (SiNx) is deposited to form a gate insulating layer 110.

Subsequently, pure amorphous silicon and impurity amorphous silicon are successively deposited on the gate insulating layer 110 to form a pure amorphous silicon layer (not shown) and an impurity amorphous silicon layer (not shown), and then perform a mask process. By patterning, an impurity amorphous silicon pattern 115b is formed on the active layer 115a and the upper portion of the switching region TrA corresponding to the gate electrode 103.

Next, as shown in FIGS. 5A and 6C, a second metal material, for example, molybdenum (Mo), over the active layer 115a, the impurity amorphous silicon pattern (115b of FIG. 6b), and the gate insulating layer 110, One of copper (Cu), titanium alloy, and aluminum alloy (AlNd) is deposited to form a second metal layer (not shown) on the front surface.

Subsequently, the second metal layer (not shown) is patterned to form a data line 119 defining the pixel region P to cross the gate line (not shown). At the same time, source and drain electrodes 120 and 122 are formed in the switching region TrA in each pixel region P so as to be spaced apart from each other on the impurity amorphous silicon pattern 115b of FIG. 6B, and the storage region StgA. The second storage electrode 124 connected to the drain electrode 122 is formed therein. In this case, the source electrode 120 is connected to the data line 119.

Thereafter, the active layer 115a is exposed between the source and drain electrodes 120 and 122 by removing the impurity amorphous silicon pattern 115b of FIG. 6B between the source and drain electrodes 120 and 122 by dry etching. An ohmic contact layer 115c of impurity amorphous silicon is formed on the active layer 115a to be in contact with the source and drain electrodes 120 and 122 and spaced apart from each other. At this time, the active layer 115a and the ohmic contact layer 115c spaced apart from each other form a semiconductor layer 115.

Meanwhile, although the above-described steps of forming the semiconductor layer 115 and the source and drain electrodes 120 and 122 are performed through two different mask processes, the gate insulating layer 110 is not shown as a modified example. ) To form a pure and impurity amorphous silicon layer, and before patterning the same, a mask process using a diffraction exposure or a halftone exposure technique is performed with the second metal layer formed on the impurity amorphous silicon layer to have different thicknesses. The semiconductor layer, the source and the drain electrode may be formed through a single mask process, wherein the photoresist pattern is formed. In this case, a semiconductor pattern is formed under the data line with the same material forming the semiconductor layer.

The gate electrode 103, the gate insulating layer 110, and the source and drain electrodes 120 and 122 spaced apart from each other and sequentially stacked on the switching zero TrA form a thin film transistor Tr.

Next, as shown in FIGS. 5A and 6D, an organic insulating material, for example, photoacryl (photoacryl), is formed on the entire surface of the data line (not shown), the source and drain electrodes 120 and 122, and the second storage electrode 124. acryl) or benzocyclobutene (BCB) is applied to form a first protective layer 130 having a flat surface. At this time, before forming the first protective layer 130, by depositing an inorganic insulating material, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiNx) on the entire surface over the thin film transistor (Tr), the second protective layer ( (Not shown) may be formed first, and the first protective layer 130 may be continuously formed.

Thereafter, the first and second passivation layers 130 (not shown) are patterned by a mask process to form drain contact holes 132 exposing the drain electrodes 122 of the thin film transistor Tr. In this case, a third protective layer (not shown) may be further formed by depositing an inorganic insulating material on the first protective layer 130 made of an organic insulating material, and in this case, forming the drain contact hole 132 may be performed. The patterning process is performed after forming the third protective layer (not shown).

The reason why the second and third passivation layers (not shown) are formed in addition to the first passivation layer 130 using the organic insulating material is to improve the characteristics of the thin film transistor Tr and the bonding force with the pixel electrode (not shown) to be formed later. To strengthen it. Since the bonding strength between the organic insulating material and the conductive material is weaker than the bonding strength between the organic insulating material and the inorganic insulating material and between the inorganic insulating material and the conductive material, the bonding property is improved by interposing the inorganic insulating material layer between the organic insulating material and the conductive material. You can. In addition, since the interface characteristics of the active layer 115a exposed between the source and drain electrodes 120 and 122 become poor when the surface is in contact with the organic insulating material, deterioration may occur. This is to improve the characteristics by interposing excellent inorganic insulating material.

Next, as shown in FIGS. 5A and 6E, a transparent conductive material such as indium-tin-oxide (ITO) over the first passivation layer 130 (or a third passivation layer (not shown) in the modification) is shown. A conductive material layer (not shown) is formed by depositing one of Indium-Zink Oxide (IZO) and Indium Tin-Zink Oxide (ITZO).

Thereafter, the conductive material layer (not shown) is patterned to form the pixel electrode 140 in the pixel region P, which is in contact with the drain electrode 122 through the drain contact hole 132.

In still another aspect of the present invention, the method may include forming the gate wiring (not shown), forming the semiconductor layer 115, forming the data wiring 119, and the pixel electrode 140. ) Is required to form a color filter layer (not shown) in the cutting area CA outside the non-display area of the array substrate 101 (this part is a part which is later cut and removed). It is characteristic to form the mark 191. At this time, the alignment mark 191 for forming the color filter may be formed between two side surfaces facing each other with the display area DA interposed therebetween among the cut areas CA outside the non-display area NA. It is preferable to form three of each one in any one portion for accurate alignment of the color filter pattern (not shown) and each pixel region P in the color filter layer (not shown).

Next, as shown in FIGS. 5B and 6F, a material having transparent and flexible characteristics corresponding to the display area DA on the pixel electrode 140 formed in each pixel area P is made of, for example, PET. The base film 150, the common electrode 153 formed on the front surface of the transparent conductive material under the lower portion, and the plurality of white pigments 156 and the black pigment 158 charged through the condensation polymerization reaction underneath. The ink layer 163 including the capsule 160 of the capsule, and the electrophoretic film 167 including the first adhesive layer 165 below the ink layer 163 is the common electrode 153 and the Located between the pixel electrode 140 and attached so that the first adhesive layer 165 and the pixel electrode 140 contact.

Next, as shown in FIGS. 5C and 6G, the electrophoretic film 167 attached to the display area DA, more precisely, the red and green color on the entire surface of the display area DA above the base film 150. One of blue, for example, a red color resist is applied by a spin coating method to form a red color filter layer (not shown), and then a light transmitting region and light passing through the light are formed. After accurate alignment is performed through the alignment mark 191 for forming a color filter layer using an exposure mask configured as a blocking region to block, exposure is performed, and the exposed color resist layer is developed to develop the display area DA. In other words, a red color filter pattern 170a or R of FIG. 5C is formed to correspond to a part of the pixel area P positioned in the first area A1.

Subsequently, the red color filter pattern 170a or R of FIG. 5C is performed in the same manner to form the green and blue color filter patterns 170b or G of FIG. 5C, 170c or B of FIG. 5C. The color filter layer 170 is completed by forming a portion corresponding to a part of the pixel region P in the first region A1 of the image. In this case, the red, green, and blue color filter patterns R, G, and B (or 170a, 170b, and 170c) may be repeated in sequence to correspond to each pixel area P. FIG. In this case, a white color filter pattern is formed by applying and patterning a resist including red, green, and blue pigments in addition to the red, green, and blue color filter patterns R, G, and B (or 170a, 170b, 170c) as a modification. (Not shown) may be further formed to form four color filter layers (not shown) including red, green, blue, and white color filter patterns (not shown). In this case, in the case of the four color filter layers (not shown), it is preferable to form four color filter patterns on four adjacent pixel areas vertically, vertically, horizontally and horizontally.

In addition, although the above-mentioned method takes the formation of the color filter layer 170 by the pigment dispersion method as an example, the color filter pattern of three colors or four colors is also performed by the method of dotting by each pixel area P using an inkjet apparatus. The color filter layer 170 may be formed.

In addition, before forming the color filter layer 170 of the three colors or four colors, the black resin is coated on the base film 150 or a black metal material such as chromium oxide is deposited and patterned. The black matrix may be formed to correspond to the boundary of P, that is, the gate wiring (not shown) and the data wiring 119. In this case, it is preferable that the black matrix (not shown) is formed only in correspondence with the first region A1 in which the color filter layer 170 is formed.

Therefore, corresponding to the first area A1 of the display area DA, a color filter layer 170 having a color filter pattern of three or four colors is disposed on the base film 150 at the boundary between the pixel area P and the color filter layer 170. The black matrix (not shown) is formed, but the black matrix (not shown) and the color filter layer 170 are not formed to correspond to the second area A2, so that the surface of the base film 150 is exposed. Will be organic.

Next, as shown in FIGS. 5C and 6H, the protective film 180 made of transparent and flexible plastic is positioned on the color filter layer 170, and the non-display area NA around the display area DA is disposed. The base to cover the display area DA with the protective film 180 formed with a seal pattern (not shown) or with a second adhesive layer (not shown) inside the protective film 180. The array substrate 101 is attached to the film 150.

5D and 6H, the alignment mark 191 for forming the color filter outside the non-display area NA with respect to the array substrate 101 to which the protective film 180 is attached is formed. The electrophoretic display device 100 according to the present invention is completed by cutting and removing the formed part.

The present invention is not limited to the above embodiments and modifications thereof, and it will be apparent that various modifications and changes can be made without departing from the spirit and the spirit of the invention.

1 is a view for explaining a driving principle of an electrophoretic display.

2 is a schematic cross-sectional view of a conventional electrophoretic display.

3 is a plan view of the electrophoretic apparatus according to the present invention.

4 is a cross-sectional view of a portion cut along the cutting line IV-IV of FIG.

Figures 5a to 5d is a plan view step by step production of the electrophoretic apparatus according to the present invention.

6A to 6H are cross-sectional views of manufacturing steps of the portion cut along the cutting line IV-IV of FIG. 3;

100: electrophoresis display device 101: substrate

130: protective layer 140: pixel electrode

150: base film 153: common electrode

156: White Pigment 158: Black Pigment

160: capsule 163: ink layer

165: adhesive layer 167: electrophoretic film

170: color filter layer 180: protective sheet

Claims

A display area including a plurality of pixel areas, a first area capable of realizing full color, a second area capable of realizing a mono type image, a substrate on which a non-display area around the display area is defined, ;

Gate wiring and data wiring formed on the substrate to define a plurality of pixel regions crossing each other;

A thin film transistor comprising a gate electrode, a gate insulating film, a semiconductor layer, and source and drain electrodes spaced apart from each other in a plurality of pixel regions connected to the gate line and the data line in a plurality of pixel regions;

A protective layer including a drain contact hole exposing the drain electrode of the thin film transistor over the thin film transistor;

A pixel electrode formed in each pixel region in contact with the drain electrode of the thin film transistor through the drain contact hole on the passivation layer;

An electrophoretic film attached to the pixel electrode corresponding to the display area;

A color filter layer formed on the electrophoretic film corresponding to the first region;

A protective sheet covering the color filter layer and attached to the front surface of the electrophoretic film

Electrophoretic display device comprising a.

The method of claim 1,

The electrophoretic film,

An ink layer comprising a pressure-sensitive adhesive layer in contact with the pixel electrode, a plurality of capsules filled with a plurality of white pigments and black pigments charged through a condensation polymerization reaction sequentially stacked thereon, a transparent common electrode, and a base film. Electrophoretic display device characterized in that.

The method of claim 1,

The protective layer forms a single layer structure of the organic insulating material layer,

Or a double layer structure of an inorganic insulating material layer / organic insulating material layer,

Or an inorganic insulating material layer, an organic insulating material layer, and an inorganic insulating material layer.

The method of claim 1,

The color filter layer may include three color filter patterns of red, green, blue, or four color filter patterns of red, green, blue, and white.

The method of claim 1,

And a storage capacitor in each of the plurality of pixel areas.

The method of claim 5,

The storage capacitor is formed so as to overlap the common wiring formed on the same layer as the gate wiring and the drain electrode so that the common wiring and the drain electrode overlapping each other are the first and second storage electrodes, respectively, between the two electrodes. And the gate insulating film interposed therebetween as a dielectric layer.

A display area including a plurality of pixel areas, a first area capable of realizing full color, a second area capable of realizing a mono type image, and a non-display area around the display area are defined. A plurality of gate lines, data lines, and gate lines, a gate insulating film, and a semiconductor, the gate lines and the data lines formed to cross each other to be connected to the gate lines and the data lines in the pixel regions. Forming a thin film transistor comprising a layer and source and drain electrodes spaced apart from each other;

Forming a protective layer on the thin film transistor, the protective layer including a drain contact hole exposing the drain electrode of the thin film transistor;

Contacting the drain electrode of the thin film transistor through the drain contact hole on the passivation layer to form a pixel electrode for each pixel region;

Attaching an electrophoretic film on the pixel electrode corresponding to the display area;

Forming a color filter layer on the electrophoretic film corresponding to the first region;

Attaching a protective sheet to the entire surface of the electrophoretic film covering the color filter layer;

Method of manufacturing an electrophoretic display device comprising a.

The method of claim 7, wherein

A cutting area is defined outside the non-display area on the substrate, and alignment of the color filter layer is formed on the cutting area in any one of the steps of forming the gate line and the data line or forming the pixel electrode. A method of manufacturing an electrophoretic display, characterized by forming a mark.

The method of claim 8,

And three alignment marks for forming the color filter layers, one each in three regions in different directions around the display region.

The method of claim 8,

After the attaching the protective sheet, cutting and removing the cutting region.

The method of claim 7, wherein

Forming the gate and data lines and the thin film transistor includes forming a storage capacitor,

Forming the gate electrode connected to the common wiring and the gate wiring in parallel with the gate wiring;

Forming the gate insulating film on the entire surface of the substrate over the gate wiring, the gate electrode, and the common wiring;

Forming a semiconductor layer on the gate insulating layer, the semiconductor layer comprising an active layer of pure amorphous silicon and an ohmic contact layer of impurity amorphous silicon spaced apart from each other above the gate insulating layer;

Forming the data line crossing the gate line over the gate insulating layer, and forming a source electrode connected to the data line and a drain electrode spaced apart from the common line over the ohmic contact layer; Display manufacturing method.