KR20110028109A - Rinsing composition - Google Patents

Abstract

PURPOSE: An aqueous cleaning solution is provided to ensure excellent detergency for organic impurities, metal-resist deposit, metal oxide, and metal complex formed on a channel part of a thin film transistor and to secure excellent anticorrosive property of copper, copper alloy line and insulation layer. CONSTITUTION: An aqueous cleaning solution includes, based on the total weight of the composition, 0.05-20 weight% of organic amine compound, 0.1-40 weight% of glycol ether compound, 0.001-5 weight% of water-soluble fluorine-based compound, 0.001-1.0 weight% of a compound represented by chemical formula 1, and the balance of water. In chemical formula 1, R1, R2 and R3 hydrogen, halogen atom, C1~5 alkyl group, C3~10 cycloalkyl group, C3~5 allyl group, C5~12 aryl group, amine group, C1~5 alkylamino group, nitro group, cyano group, mercapto group, C1~5 alkylmercapto group, hydroxyl group, C1~5 hydroxyalkyl group, carboxyl group, C2~5 carboxyalky group, acyl group, C1~5 alkoxy group, or a monovalent group having C4~12 heterocyclic ring.

Description

Rinsing composition

The present invention relates to an aqueous cleaning liquid composition for cleaning a surface of a substrate used in a flat panel display device and a method of cleaning a substrate using the same. In particular, the present invention relates to a cleaning liquid composition for removing organic contaminants, metal-resist deposits, metal oxides, metal complexes, etc. formed in the channel portion of the thin film transistor, and a cleaning method using the same.

FPDs typified by liquid crystal displays are manufactured through processes such as film formation, exposure, and etching, like semiconductor devices. That is, the etching process for the gate metal, the active layer, and the insulating layer source-drain metal is completed, and the photoresist layer used as a mask is peeled off using a stripping solution, followed by dry etching using a patterned source-drain as a mask. It is prepared by the process of patterning the channel portion by overetching the n + a-si and a-si: H layer using the method.

The photoresist used as a mask before forming the channel portion is removed by a resist stripping solution. At this time, a chemical reaction of the photoresist and the wiring material decomposed / dissolved by the stripping solution used to remove the photoresist occurs to form a metal-resist deposit, and in the case of metal wiring, oxidation of the sidewall exposed portion of the channel portion is performed. Is promoted to form an oxide film. In addition, the dry etching gas used for patterning the channel portion may form a metal complex salt with a metal wiring material forming a source-drain. The metal-resist deposits, metal oxides, and metal complexes formed after the resist stripping and dry etching are contaminated with the channel portions even though they are present in the trace portions, resulting in leakage current between the source and drain metal wirings, and consequently the yield of the device. Lowers. Therefore, it is necessary to minimize such metal-resist deposits, metal oxides, metal complexes, and the like before entering the post process. Therefore, there is a need for a cleaning process for removing the contamination of the channel portion.

Conventional techniques applicable to the cleaning process for removing channel contamination as mentioned above include a stripping solution or cleaning agent for removing a resist-denatured film generated after dry etching or ashing in a device manufacturing process for semiconductor or flat panel displays. . Specific examples of such a prior art are as follows.

Japanese Patent Application Laid-Open No. 7-201794 proposes a semiconductor device cleaning agent containing a specific quaternary ammonium salt, a fluorine compound, and an organic solvent, and Japanese Patent Laid-Open No. 9-197681 does not contain hydrofluoric acid and metal ions. A stripper composition for resists containing a salt of a base and a water-soluble organic solvent and having a pH of 5 to 8 is proposed. Japanese Unexamined Patent Application Publication No. Hei 11-67632 proposes a cleaning agent for semiconductor devices each containing a specific amount of a fluorine compound, a water-soluble organic solvent, and water, and Japanese Unexamined Patent Application Publication No. Hei 9-283507, a quaternary ammonium hydroxide, Release agents containing a nucleophilic amine compound having a redox potential, sugars and / or sugar alcohols, and water in specific mixing ratios, respectively, have been proposed.

However, such a conventional stripping agent or cleaning agent does not prevent the corrosion of the metallization formed on the recent highly integrated and densified substrates to a practical level, and also removes metal oxides, metal-resist residues, metal complex salts, and the like. Since it is not sufficient, it is not suitable for use in a cleaning process for removing contamination of the channel portion.

The present invention relates to organic contaminants, metal-resist deposits, metal oxides and metal complexes formed in the channel portion of the thin film transistor of the liquid crystal display device, in particular, contaminants generated during the manufacture of a flat panel display device. An object of the present invention is to provide an aqueous cleaning liquid composition which can be effectively removed without corrosion of the lower film quality such as alloy wiring and insulating film.

The present invention is 0.05 to 20% by weight of the organic amine compound, 0.1 to 40% by weight of the glycol ether compound, 0.001 to 5% by weight of a water-soluble fluorine compound excluding hydrofluoric acid, the compound represented by the formula (1) An aqueous cleaning liquid composition is provided comprising 1.0 wt% and residual water:

In the above formula, R1, R2 and R3 are each independently a hydrogen atom, a halogen atom, an alkyl group of C1 ~ C5, a cycloalkyl group of C3 ~ C10, an allyl group of C3 ~ C5, an aryl group of C5 ~ C12, an amine group C1 ~ C5 Alkylamino group, nitro group, cyano group, mercapto group, C1-C5 alkyl mercapto group, hydroxy group, C1-C5 hydroxyalkyl group, carboxyl group, C2-C5 carboxyalkyl group, acyl group, C1-C5 alkoxy Monovalent group which has a group or C4-C12 heterocycle is shown.

In addition, the present invention,

The aqueous cleaning liquid composition of the present invention is maintained at a temperature of 20 to 80 ℃, and provides a cleaning method of the thin film transistor channel portion, characterized in that for 10 seconds to 10 minutes to clean the channel portion of the thin film transistor.

In addition, the present invention,

The aqueous cleaning liquid composition of the present invention is maintained at a temperature of 20 to 80 ℃, and provides a method for producing a thin film transistor comprising the step of cleaning the channel portion of the thin film transistor for 10 seconds to 10 minutes.

The water-based cleaning liquid composition of the present invention is excellent in cleaning power for organic contaminants and metal-resist deposits, metal oxides and metal complexes formed in the channel portion of the thin film transistor of the liquid crystal display device, in particular, during the manufacturing of the flat panel display device. In addition, it is excellent in the corrosion prevention effect on the metal wiring formed on the board | substrate, especially copper and copper alloy wiring, and an insulating film.

In addition, it contains a large amount of deionized water is easy to handle and environmentally beneficial.

The present invention is 0.05 to 20% by weight of the organic amine compound, 0.1 to 40% by weight of the glycol ether compound, 0.001 to 5% by weight of a water-soluble fluorine compound excluding hydrofluoric acid, the compound represented by the formula (1) It relates to an aqueous cleaning liquid composition comprising 1.0% by weight and the balance of water:

[Formula 1]

In the above formula, R1, R2 and R3 are each independently a hydrogen atom, a halogen atom, an alkyl group of C1 ~ C5, a cycloalkyl group of C3 ~ C10, an allyl group of C3 ~ C5, an aryl group of C5 ~ C12, an amine group, C1 ~ C5 alkylamino group, nitro group, cyano group, mercapto group, C1-C5 alkyl mercapto group, hydroxy group, C1-C5 hydroxyalkyl group, carboxyl group, C2-C5 carboxyalkyl group, acyl group, C1-C5 The monovalent group which has an alkoxy group or C4-C12 heterocycle is shown.

The organic amine compound included in the cleaning liquid composition of the present invention is preferably included in 0.05% by weight to 20% by weight, and more preferably contained in 0.1% by weight to 10% by weight relative to the total weight of the composition. When the organic amine compound is included in less than 0.05% by weight, sufficient cleaning effects on microparticles, organic contaminants and inorganic contaminants may not be achieved, and when the organic amine compound exceeds 20% by weight, the pH of the organic amine compound is increased to increase corrosion of the metal wiring.

Examples of the organic amine compound include primary amines such as methylamine, ethylamine, isopropylamine, and monoisopropylamine; Secondary amines such as diethylamine, diisopropylamine and dibutylamine; Tertiary amines such as trimethylamine, triethylamine, triisopropylamine and tributylamine; Tetramethylammonium hydroxide, choline, monoethanolamine, diethanolamine, 2-amino ethanol, 2- (ethylamino) ethanol, 2- (methylamino) ethanol, N-methyldiethanolamine, dimethylaminoethanol, di Alkanolamines such as ethylaminoethanol, nitrilotriethanol, 2- (2-aminoethoxy) ethanol, 1-amino-2-propanol, triethanolamine, monopropanolamine, and zwittanoamine, and the like. One kind alone or two or more kinds may be used together.

The glycol ether compound contained in the cleaning liquid composition of the present invention serves as a solvent for dissolving organic contaminants. In addition to the function as a solvent, the compound lowers the surface tension of the cleaning liquid to increase the wettability to the substrate, thereby improving the cleaning power.

The glycol ether compound is preferably included in an amount of 0.1 to 40% by weight, more preferably 0.5 to 20% by weight based on the total weight of the composition. If the glycol ether compound is included in less than 0.1% by weight can not be expected to increase the solubility of the contaminants by the component, when the content exceeds 40% by weight no increase in the wettability effect.

The glycol ether compound may be ethylene glycol monobutyl ether (BG), diethylene glycol monomethyl ether (MDG), diethylene glycol monoethyl ether (carbitol), diethylene glycol monobutyl ether (BDG), dipropylene glycol monomethyl Ether (DPM), dipropylene glycol monoethyl ether (MFDG), triethylene glycol monobutyl ether (BTG), triethylene glycol monoethyl ether (MTG), propylene glycol monomethyl ether (MFG), and the like. One kind alone or two or more kinds may be used together.

The fluorine-based compound other than hydrofluoric acid included in the cleaning liquid composition of the present invention serves to improve the removability of metal-resist deposits, metal oxides and metal complexes present in the channel portion. Hydrofluoric acid in fluorine compounds is not used in the present invention because of its risk and reactivity. Hydrofluoric acid is a weak acid, but it is very toxic and it is very difficult to handle, and it can be harmful to human body by generating hydrogen or fluorine gas when reacting with organic amine which is alkali among detergent components. Therefore, other fluorine-based compounds that are more stable or easier to handle than hydrofluoric acid are used.

The fluorine-based compound is preferably contained in an amount of 0.001 to 5% by weight, and more preferably 0.01 to 2% by weight based on the total weight of the composition. When the fluorine-based compound is contained in less than 0.001% by weight, the removal effect on the metal-resist deposits, metal oxides, metal complexes, etc. of the cleaning liquid composition is insignificant, and when included in more than 5% by weight, the pH of the cleaning liquid composition is reduced to organic. The problem arises that the cleaning power for inorganic contaminants is rather lowered and the corrosion to the lower film of the channel portion is increased.

Examples of the fluorine-based compound include boric fluoride (HBF ₄ ), ammonium fluoride (NH ₄ F), ammonium bifluoride (NH ₄ HF ₂ ), tetramethyl ammonium fluoride ((CH ₃ ) ₄ NF), and tetrahydrofluoric acid. Ethyl ammonium fluoride ((CH ₃ CH ₂ ) ₄ NF), methylamine hydrogen fluoride salt, ethylamine hydrogen fluoride salt, propylamine hydrogen fluoride salt, and the like, and these may be used alone or in combination of two or more thereof. Can be.

The compound represented by the following Chemical Formula 1 included in the cleaning solution composition of the present invention serves to minimize corrosion of the conductive metal film and the insulating film below as a corrosion inhibitor. In particular, the lone pair of electrons of the nitrogen atom present in the triazole ring is bonded electronically with copper to effectively suppress corrosion of the copper wiring.

The compound represented by the following Formula 1 is preferably included in 0.001 to 1.0% by weight based on the total weight of the composition, more preferably 0.01 to 0.5% by weight. When the content of the compound represented by the formula (1) is contained less than 0.001% by weight, it is difficult to expect the anti-corrosion effect of the lower conductive metal film and the insulating film, if it exceeds 1.0% by weight further increase the effect is insignificant economically desirable Not.

 [Formula 1]

In the above formula, R1, R2 and R3 are each independently a hydrogen atom, a halogen atom, an alkyl group of C1 ~ C5, a cycloalkyl group of C3 ~ C10, an allyl group of C3 ~ C5, an aryl group of C5 ~ C12, an amine group, C1 ~ C5 alkylamino group, nitro group, cyano group, mercapto group, C1-C5 alkyl mercapto group, hydroxy group, C1-C5 hydroxyalkyl group, carboxyl group, C2-C5 carboxyalkyl group, acyl group, C1-C5 The monovalent group which has an alkoxy group or C4-C12 heterocycle is shown.

Specific examples of the compound include 2,2 '-[[[benzotriazol-1-yl] methyl] imino] bisethanol, [[[methyl-1H-benzotriazol-1-yl] methyl] imino] Bismethanol, 2,2 '-[[[ethyl-1H-benzotriazol-1-yl] methyl] imino] bisethanol, [[[methyl-1H-benzotriazol-1-yl] methyl] imino ] Biscarboxylic acid, [[[methyl-1H-benzotriazol-1-yl] methyl] imino] bismethylamine, 2,2 '-[[[amine-1H-benzotriazol-1-yl] methyl] Imino] bisethanol and the like, and these may be used alone or in combination of two or more.

In the compounds specifically exemplified above, the substituent (R3) substituted in the benzene ring is not limited to the bonding position thereof. That is, it can be combined at any of positions 4, 5, 6 and 7.

It is preferable that the water contained in the aqueous cleaning liquid composition of the present invention is deionized water, and it is preferable to include the remaining amount so that the sum of the components of the aqueous cleaning liquid composition of the present invention is 100%.

The aqueous cleaning liquid composition of the present invention exhibits an excellent effect on the substrate cleaning of the flat panel display device, and particularly, the cleaning of the channel portion of the thin film transistor. In addition, since the corrosion resistance to copper or copper alloy is excellent, it can be preferably used for cleaning the channel portion of the thin film transistor including copper or copper alloy wiring.

As the cleaning method using the cleaning solution of the present invention, a method of spraying the cleaning solution on the contaminated substrate surface, a method of dipping the substrate into a bath containing the cleaning solution, and the like may be used. That is, a spray method, a spin method, a dipping method, or a dipping method using ultrasonic waves may be used.

Through such a wet process, organic contaminants or particles on the substrate can be effectively removed. It is preferable to keep the temperature of the cleaning solution at 20 to 80 ℃ during cleaning, and to improve the removal efficiency of organic contaminants or particles, it is advantageous to lengthen the wet process time, but the wet process time is 30 seconds to 10 in view of productivity. Minutes are preferred.

Hereinafter, the present invention will be described in more detail with reference to Examples. However, the following examples are intended to illustrate the present invention more specifically, but the scope of the present invention is not limited by the following examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention.

Examples 1 to 15, Comparative Example 1 and Comparative Example 2: Preparation of Cleaning Liquid Composition

An organic amine compound, a water-soluble glycol ether compound, a fluorine-based compound except for hydrofluoric acid, a compound of Formula 1, and water were mixed in the amounts shown in Table 1 to prepare a water-based cleaning liquid composition.

Organoamine
compound Glycol ether compounds Fluorine compound Compound of Formula 1
Deionized water Kinds Content (% by weight) Kinds content
(weight%) Kinds content
(weight%) Kinds content
(weight%) Content (% by weight) Example 1 A-1 1.0 B-1 15 C-1 0.2 D-1 0.1 Balance Example 2 A-1 1.0 B-1 20 C-1 0.5 D-2 0.2 Balance Example 3 A-1 5.0 B-2 10 C-2 0.5 D-1 0.2 Balance Example 4 A-1 5.0 B-2 15 C-2 0.2 D-2 0.1 Balance Example 5 A-1 5.0 B-2 20 C-2 0.5 D-1 0.2 Balance Example 6 A-2 1.0 B-1 15 C-1 0.2 D-1 0.1 Balance Example 7 A-2 1.0 B-1 20 C-1 0.5 D-1 0.2 Balance Example 8 A-2 5.0 B-1 10 C-1 0.2 D-1 0.1 Balance Example 9 A-2 5.0 B-2 15 C-1 0.5 D-1 0.2 Balance Example 10 A-2 5.0 B-2 20 C-1 0.2 D-1 0.1 Balance Example 11 A-3 1.0 B-1 15 C-1 0.5 D-1 0.2 Balance Example 12 A-3 1.0 B-1 20 C-1 0.2 D-1 0.1 Balance Example 13 A-3 5.0 B-1 10 C-1 0.5 D-1 0.2 Balance Example 14 A-3 5.0 B-2 15 C-1 0.5 D-1 0.2 Balance Example 15 A-3 5.0 B-2 20 C-1 0.5 D-1 0.2 Balance Comparative Example 1 A-1 5.0 - - - - - - Balance Comparative Example 2 A-2 5.0 B-2 20 - - - - Balance

A-1: monoethanolamine (MEA)

A-2: 1-amino-2-propanol (MIPA)

A-3: Dimethyl Aminoethanol (DMAE)

B-1: diethylene glycol monomethyl ether (MDG)

B-2: diethylene glycol monobutyl ether (BDG)

C-1: ammonium fluoride

C-2: ammonium bifluoride

D-1: 2,2 '-[[[4-ethyl-1H-benzotriazol-1-yl] methyl] imino] bisethanol

D-2: [[[4-methyl-1H-benzotriazol-1-yl] methyl] imino] bismethanol

Test Example: Evaluation of Characteristics of Aqueous Cleaning Liquid Composition

Corrosion Prevention Evaluation

First, a glass substrate having an aluminum thickness of 2000 mm 2 and a copper thickness of 2500 mm 2 was deposited on the cleaning liquid compositions of Examples 1 to 15 and Comparative Examples 1 to 2 for 30 minutes. At this time, the temperature of the cleaning liquid composition was 40 ℃, the thickness of the metal film was measured before and after deposition to calculate the dissolution rate of the metal film from the thickness change of the metal film. The evaluation results are shown in Table 2 below.

<Evaluation of Organic Pollutant Removal>

Glass substrates of 5 cm × 5 cm size were left in the air for 24 hours to contaminate various organic materials, inorganic materials, and particles in the air. It was washed with the cleaning liquid compositions of Examples 1 to 15 and Comparative Examples 1 to 2 at 40 ° C. for 2 minutes using a spray glass substrate cleaning apparatus. After cleaning, the mixture was washed with ultrapure water for 30 seconds and then dried with nitrogen. 0.5 μl of ultrapure water was dropped on the glass substrate to measure the contact angle after washing, and the results are shown in Table 2 below.

<Evaluation of Contaminant Removal Power in Channel>

      After marking the part where the leakage current is generated due to contamination on the patterned substrate on which the dry etching of the channel part is completed, Examples 1 to 15 and Comparative Examples 1 to 2 were used at room temperature for 2 minutes using a spray-type glass substrate cleaning device. It wash | cleaned with the cleaning liquid composition of the comparative example 2. After washing for 30 seconds in ultrapure water and dried with nitrogen. The substrate was measured by SEM-EDAX to determine whether metal-resist deposits, metal oxides and metal complexes were detected in the channel portion.

<Erosion Prevention Evaluation Criteria>

According to the thickness change of the metal film

◎: excellent (less than 2 s / min), ○: good (less than 5 s / min), △: poor (less than 10 s / min), Ⅹ: poor (more than 10 s / min)

<Evaluation Criteria for Organic Pollutant Removal>

According to the reduction of contact angle

◎: Excellent (40 ° or more decrease), ○: Good (40 ~ 30 ° decrease), △: Poor (30 ~ 20 ° decrease), Ⅹ: Poor (less than 20 °)

<Organic / metal element detection of channel part>

      ○: detected, 검출: not detected.

Cu etching rate (속도 / min) Contact angle EDAX measurement result Room temperature 40 ℃ Example 1 ◎ ○ ○ X Example 2 ◎ ○ ○ X Example 3 ◎ ○ ○ X Example 4 ◎ ○ ○ X Example 5 ○ ○ ○ X Example 6 ○ ○ ○ X Example 7 ◎ ○ ○ X Example 8 ◎ ○ ○ X Example 9 ○ ○ ○ X Example 10 ○ ○ ○ X Example 11 ○ ○ ○ X Example 12 ○ ○ ○ X Example 13 ◎ ◎ ○ X Example 14 ○ ◎ ○ X Example 15 ○ ◎ ○ X Comparative Example 1 X X ○ ○ Comparative Example 2 X X △ ○

As can be seen in Table 2, the cleaning liquid compositions of Examples 1 to 15 are not only excellent anticorrosive effect on the metal wiring by including the compound of Formula 1 as a corrosion inhibitor, but also added to the channel contaminants by the addition of fluorine compounds. It also showed an excellent effect in terms of removal power. However, in Comparative Example 1 cleaning liquid composition was good cleaning power but poor anticorrosive effect on the metal wiring, the cleaning liquid composition of Comparative Example 2 was not enough cleaning effect on the contaminants of the channel portion as well.

The correlation between the contact angle with respect to water and the removal force of organic / inorganic contaminants in the above experiment will be described as follows.

Glass substrates for flat panel displays have an appropriate contact angle for surface roughness and post-processing for film deposition. However, when organic contaminants are present on the glass substrate, they become hydrophobic, like fingerprints or oil films. Therefore, when the contact angle of the contaminated glass substrate is measured, the wettability of the hydrophobic surface is inferior, thereby increasing the contact angle due to the surface tension of water. At this time, if the hydrophobic contaminants are removed from the glass substrate through cleaning, only the characteristics of the glass substrate itself are obtained, and the contact angle is reduced to an initial clean state. In addition, when the surface of the substrate is made hydrophilic through surface modification or the like, the contact angle is further reduced than the initial stage.

<Metal Pattern Corrosion Resistance Evaluation>

Using the cleaning liquid composition prepared in Examples 1 to 5 and Examples 11 to 15, the substrate on which the copper pattern was formed on the glass substrate formed to a size of 5 cm x 5 cm using a spray type glass substrate cleaning apparatus. Rinse at 40 ° C. for 2 minutes. After washing for 30 seconds in ultrapure water and dried with nitrogen. The results are shown in Table 3 below.

Corrosion Evaluation Criteria

○: no corrosion, △: slight corrosion, X: large amount of corrosion

Cu pattern corrosion Room temperature 40 ℃ Example 1 ○ ○ Example 2 ○ ○ Example 3 ○ ○ Example 4 ○ ○ Example 5 ○ ○ Example 11 ○ ○ Example 12 ○ ○ Example 13 ○ ○ Example 14 ○ ○ Example 15 ○ ○ Comparative Example 1 X X

As confirmed in Table 3, it can be seen that the cleaning solution composition of the present invention is very excellent in preventing the corrosion of copper compared to the conventional cleaning solution composition.

Claims (9)

0.05% to 20% by weight of the organic amine compound, 0.1 to 40% by weight of the glycol ether compound, 0.001 to 5% by weight of the water-soluble fluorine-based compound excluding hydrofluoric acid, and 0.001 to 1.0% by weight of the compound represented by the following formula (1) And a residual amount of water; [Formula 1]

In the above formula, R1, R2 and R3 are each independently a hydrogen atom, a halogen atom, an alkyl group of C1 ~ C5, a cycloalkyl group of C3 ~ C10, an allyl group of C3 ~ C5, an aryl group of C5 ~ C12, an amine group C1 ~ C5 Alkylamino group, nitro group, cyano group, mercapto group, C1-C5 alkyl mercapto group, hydroxy group, C1-C5 hydroxyalkyl group, carboxyl group, C2-C5 carboxyalkyl group, acyl group, C1-C5 alkoxy Monovalent group which has a group or C4-C12 heterocycle is shown.         The aqueous cleaning liquid composition according to claim 1, wherein the organic amine compound is one or two or more selected from the group consisting of primary amines, secondary amines, tertiary amines, and alkanolamines. The method of claim 1, wherein the glycol ether compound is ethylene glycol monobutyl ether (BG), diethylene glycol monomethyl ether (MDG), diethylene glycol monoethyl ether (carbitol), diethylene glycol monobutyl ether (BDG), di Propylene glycol monomethyl ether (DPM), dipropylene glycol monoethyl ether (MFDG), triethylene glycol monobutyl ether (BTG), triethylene glycol monoethyl ether (MTG) and propylene glycol monomethyl ether (MFG) An aqueous cleaning liquid composition, characterized in that one or two or more selected from. The method of claim 1, wherein the water-soluble fluorine-based compound except for hydrofluoric acid is boron fluoride (HBF ₄ ), ammonium fluoride (NH ₄ F), ammonium bifluoride (NH ₄ HF ₂ ), tetramethyl ammonium fluoride ((CH ₃ ) ₄ NF), tetraethyl ammonium fluoride ((CH ₃ CH ₂ ) ₄ NF), methylamine hydrogen fluoride salt, ethylamine hydrogen fluoride salt, and propylamine hydrogen fluoride salt. Aqueous cleaning liquid composition, characterized in that. The method of claim 1, wherein the compound represented by Formula 1 is 2,2 '-[[[benzotriazol-1-yl] methyl] imino] bisethanol, [[[methyl-1H-benzotriazole-1- Il] methyl] imino] bismethanol, 2,2 '-[[[ethyl-1H-benzotriazol-1-yl] methyl] imino] bisethanol, [[[methyl-1H-benzotriazole-1 -Yl] methyl] imino] biscarboxylic acid, [[[methyl-1H-benzotriazol-1-yl] methyl] imino] bismethylamine, and 2,2 '-[[[amine-1H-benzotria A sol-1-yl] methyl] imino] bisethanol 1 or 2 or more types chosen from the group which consists of a water-based washing | cleaning liquid composition. The aqueous cleaning liquid composition according to claim 1, wherein the aqueous cleaning liquid composition is used for cleaning the channel portion of the thin film transistor. The aqueous cleaning liquid composition according to claim 6, wherein the thin film transistor channel portion comprises copper or copper alloy wiring. The method of claim 1, wherein the aqueous cleaning liquid composition of claim 1 is maintained at a temperature of 20 to 80 ° C, and the channel portion of the thin film transistor is cleaned for 10 to 10 minutes. A method of manufacturing a thin film transistor comprising maintaining a water-based cleaning liquid composition of claim 1 at a temperature of 20 to 80 ° C. and cleaning the channel portion of the thin film transistor for 10 seconds to 10 minutes.