KR20090068005A - Method for fabricating pattern using anodization - Google Patents

Method for fabricating pattern using anodization Download PDF

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Publication number
KR20090068005A
KR20090068005A KR1020070135856A KR20070135856A KR20090068005A KR 20090068005 A KR20090068005 A KR 20090068005A KR 1020070135856 A KR1020070135856 A KR 1020070135856A KR 20070135856 A KR20070135856 A KR 20070135856A KR 20090068005 A KR20090068005 A KR 20090068005A
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KR
South Korea
Prior art keywords
metal
pattern
film
cantilever
metal film
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KR1020070135856A
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Korean (ko)
Inventor
준 전
Original Assignee
주식회사 하이닉스반도체
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Priority to KR1020070135856A priority Critical patent/KR20090068005A/en
Publication of KR20090068005A publication Critical patent/KR20090068005A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

Pattern forming method using anodization of the present invention, the step of depositing a metal film on a semiconductor substrate; Disposing a cantilever connected to the electrode device on the metal film; Applying an anode (+) on a semiconductor substrate while applying a cathode (−) to the cantilever to oxidize the metal film to which the anode is applied to form a metal oxide film; And forming a metal oxide pattern to separate the metal layer by performing a planarization process on the metal oxide layer.

Description

Pattern forming method using anodization {Method for fabricating pattern using anodization}

The present invention relates to a semiconductor device, and more particularly, to a pattern forming method using anodization which can be patterned without a mask.

In general, a semiconductor device is composed of a number of fine patterns, such fine patterns are generally formed through a photolithography process. In the photolithography process, a photoresist film is coated on a target film to be patterned, and an exposure process and a development process are performed to form a photoresist film pattern exposing a part surface of the target film. Next, the photoresist film pattern is etched using a mask to remove the exposed portion of the target film, and then the photoresist film pattern is removed to form a pattern. However, the process using the photolithography process is cumbersome to go through several stages of the process.

1A to 1E are diagrams for explaining a pattern forming method using a conventional photolithography process.

Referring to FIG. 1A, a metal film 105 is deposited on a semiconductor substrate 100. Next, a photoresist film 110 is formed over the metal film 105. Next, an exposure process is performed on the photoresist film 110 to change the solubility of the portion a in which the pattern is to be formed.

Next, as shown in FIG. 1B, a developing process of removing a portion in which the solubility of the photoresist film 110 has been denatured is performed using a developer to form a photoresist film pattern 115. The surface of the metal film 105 is partially exposed by the photoresist film pattern 115.

Subsequently, as illustrated in FIG. 1C, the metal film 105 exposed with the photoresist film pattern 115 as a mask is etched to form the metal film pattern 120.

Next, as shown in FIG. 1D, the metal oxide film 125 is deposited on the semiconductor substrate 100 on which the metal film pattern 120 is formed. When the photoresist film pattern 115 is removed, as illustrated in FIG. 1E, a metal film pattern 120 in which adjacent patterns are separated by the metal oxide film 125 is formed.

As described above, when the pattern is formed using the photolithography process, various process steps such as coating, exposing, developing, etching, and removing the photoresist film must be performed as described above. However, the progress of these various process steps is not only disadvantageous in terms of time and cost, but also may cause defects in a complicated process step. Accordingly, there is a need for a method capable of forming a pattern while simplifying the process steps.

Pattern forming method using anodization according to the present invention comprises the steps of depositing a metal film on a semiconductor substrate; Disposing a cantilever connected to an electrode device on the metal film; Applying an anode (+) to the semiconductor substrate while applying a cathode (−) to the cantilever to oxidize the metal film to which the anode is applied to form a metal oxide film; And forming a metal oxide pattern to separate the metal layer by performing a planarization process on the metal oxide layer.

The electrode device preferably comprises an atomic force microscope (AFM) device.

The cantilever is preferably applied to the electrode selectively on the metal film while moving in one direction of the metal film.

The planarization process is preferably carried out using a chemical mechanical polishing (CMP) method or an etch back method.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

2 to 5 are views for explaining a pattern forming method using anodization according to an embodiment of the present invention.

Referring to FIG. 2, a metal layer 205 is deposited on the semiconductor substrate 200. Although not shown in the drawings, a lower structure including a word line and a bit line may be formed on the semiconductor substrate 200. The metal film 205 formed on the semiconductor substrate 200 is preferably formed of a conductive material that can be electrically connected to the lower structure and the upper electrode to be formed later.

3 and 4, a metal oxide film 210 is selectively formed in the metal film 205 and grown. To this end, a cantilever 215 connected to the electrode device is first disposed on the metal film 205. The electrode device connected to the cantilever 215 here includes an atomic force microscopy (AFM). Atomic Force Microscopy (AFM) is a device that is generally used to observe without damaging the material of interest. The electrode may be applied to the lithography process by applying an electrode on the cantilever 215 of the atomic force microscope (AFM).

Specifically, as shown in FIG. 4, the cathode (−) is applied to the cantilever 215 connected to the electrode device. In addition, an anode (+) is applied to the semiconductor substrate 200 disposed to be spaced apart by a predetermined distance corresponding to the cantilever 215. At this time, a potential difference is generated between the cantilever 215 and the semiconductor substrate 200, and an electric field is generated while electrons move from the cantilever 215 to the semiconductor substrate 200 by this potential difference. Then, the metal film 205 in the region corresponding to the cantilever 215 is oxidized and is modified into the metal oxide film 210.

At this time, a water column 220 is formed by moisture in the air between the semiconductor substrate 200 and the cantilever 215, and the metal oxide layer 210 is grown by the following reaction formula.

Scheme 1

Cantilever (cathode reaction)

2nH 2 O + 2ne - -> nH 2 + 2nOH -

Semiconductor substrate (anode reaction)

Si + nH 2 O -> SiOn + 2nH + + 2ne -

Referring to Reaction Schemes 1 and 4, oxygen (O) is generated as the water (H 2 O) is electrolyzed in the water column 220 formed between the semiconductor substrate 200 and the cantilever 215. The metal oxide film 210 is formed while the metal source 205 and the oxidation source containing oxygen generated by the electrolysis reaction react. The metal oxide layer 210 grows higher as the reaction time continues. Herein, as the amount of the electrode (or bias) applied to the cantilever 215 and the semiconductor substrate 200 increases, the growth rate of the metal oxide layer 210 increases. At this time, a current passing through the metal oxide film 210 flows by the electric field, so that the oxidation process may be accelerated. Acceleration of the growth of the metal oxide film 210 by the applying electrode may be determined as electron particles flowing through the metal oxide film 210 contribute to the growth of the oxide film. Meanwhile, the electrode device connected to the cantilever 215 selectively applies a cathode (−) only to a portion where the metal oxide film 210 is to be formed while moving in one direction of the semiconductor substrate 200. In this case, the growth profile of the metal oxide film 210 may be a rectangular shape adjacent to the semiconductor substrate 100, and the upper portion may be formed in a rectangular, semi-circular or semi-elliptic profile.

Referring to FIG. 5, a planarization process is performed on the metal oxide layer 210 to form a metal oxide layer pattern 230 that forms a separated metal layer pattern 225. The planarization process of forming the metal oxide layer pattern 230 may be performed using a chemical mechanical polishing (CMP) method or an etch back method. This planarization process proceeds until the surface of the metal film is exposed, and the planarization process forms a metal film pattern 225 in which adjacent metal films are separated.

In the pattern forming method using anodization according to the present invention, a metal film to be separated or formed to be formed is deposited on a semiconductor substrate, a cantilever connected to an atomic force microscope (AFM) is disposed on the metal film, and then a cathode is placed on the cantilever. Is applied, and an anode is applied to the semiconductor substrate. Then, as the oxide source is formed by the electric field formed between the cantilever and the semiconductor substrate, the metal film is oxidized to form a metal oxide pattern that separates the metal film. That is, the lithography process and the planarization process using the anodization method can be used to separate the metal film or form the pattern without using the photolithography process. This can reduce complex process steps, save time, and control defects that can result from complex process steps.

1A to 1E are diagrams for explaining a pattern forming method using a conventional photolithography process.

2 to 5 are views for explaining a pattern forming method using anodization according to an embodiment of the present invention.

Claims (4)

Depositing a metal film on the semiconductor substrate; Disposing a cantilever connected to an electrode device on the metal film; Applying an anode (+) to the semiconductor substrate while applying a cathode (−) to the cantilever to oxidize the metal film to which the anode is applied to form a metal oxide film; And Forming a metal oxide pattern to separate the metal layer by performing a planarization process on the metal oxide layer. The method of claim 1, The electrode device is a pattern forming method using anodization comprising an atomic force microscope (AFM) device. The method of claim 1, The cantilever is a pattern forming method using anodization to selectively apply an electrode on the metal film while moving in one direction of the metal film. The method of claim 1, The planarization process is a pattern formation method using anodization proceeding using a chemical mechanical polishing (CMP) method or an etch back (etch back) method.
KR1020070135856A 2007-12-21 2007-12-21 Method for fabricating pattern using anodization KR20090068005A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102597525B1 (en) * 2023-05-18 2023-11-02 주식회사 이노플라즈텍 Plasma device for surface treatment of powder using horizontal plate electrode
WO2023229313A1 (en) * 2022-05-24 2023-11-30 주식회사 이노플라즈텍 Plasma device for powder surface treatment using horizontal electrodes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023229313A1 (en) * 2022-05-24 2023-11-30 주식회사 이노플라즈텍 Plasma device for powder surface treatment using horizontal electrodes
KR102597525B1 (en) * 2023-05-18 2023-11-02 주식회사 이노플라즈텍 Plasma device for surface treatment of powder using horizontal plate electrode

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