KR20070096248A - Appratus for atomic layer deposition using showerhead having gas separative type - Google Patents

Appratus for atomic layer deposition using showerhead having gas separative type Download PDF

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KR20070096248A
KR20070096248A KR1020060025775A KR20060025775A KR20070096248A KR 20070096248 A KR20070096248 A KR 20070096248A KR 1020060025775 A KR1020060025775 A KR 1020060025775A KR 20060025775 A KR20060025775 A KR 20060025775A KR 20070096248 A KR20070096248 A KR 20070096248A
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precursor
gas
reaction chamber
source
showerhead
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KR1020060025775A
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KR100802382B1 (en
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배근학
김경수
김호식
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주식회사 아토
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Priority to KR1020060025775A priority Critical patent/KR100802382B1/en
Priority to CN200710005658A priority patent/CN100590223C/en
Priority to US11/684,367 priority patent/US20070221129A1/en
Priority to TW096109114A priority patent/TWI349044B/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Abstract

An apparatus for atomic layer deposition using a gas separation type showerhead, which enables a deposition gas and a reaction gas to be supplied and moved separately, suppresses the generation of by-products in the shower head, and can maintain uniformity of a gas flow in a chamber during atomic layer deposition, is provided. An apparatus for atomic layer deposition using a gas separation type showerhead comprises a gas supply part(10) having a first precursor supply(11) for supplying a first precursor, a second precursor supply(12) for supplying a second precursor, a purge gas supply(13), and a plurality of valves(V/V1~ V/V4) for controlling opening/closing and flow amounts of the respective gases, a showerhead part(20) of which an upper part has a first precursor supply pipe connected to the first precursor supply and a second precursor supply pipe connected to the second precursor supply, and of which a lower part has a mixing injection port for individually injecting the first precursor, the second precursor and the purge gas into a reaction chamber(1), and an exhaust part(30) which has an exhaust pump, and exhausts a gas remaining in the reaction chamber to the outside when the purge gas is injected into the reaction chamber.

Description

가스분리형 샤워헤드를 이용한 원자층 증착 장치{Appratus for atomic layer deposition using showerhead having gas separative type}Apparatus for atomic layer deposition using showerhead having gas separative type

도 1은 본 발명에 의한 가스분리형 샤워헤드를 이용한 ALD 장치를 개략적으로 나타낸 도면.1 is a view schematically showing an ALD device using a gas separation shower head according to the present invention.

도 2는 본 발명에 의한 ALD 장치의 샤워헤드부를 개략적으로 나타낸 도면.2 is a view schematically showing a showerhead portion of an ALD device according to the present invention;

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for main parts of the drawings>

1 : 반응 챔버 10 : 가스 공급부1: reaction chamber 10: gas supply part

11: 제1 전구체 공급원 12: 제2 전구체 공급원11: first precursor source 12: second precursor source

13 : 퍼지가스 공급원 20 : 샤워헤드부13: purge gas supply source 20: shower head

21 : 제1 전구체 공급관 22 : 제2 전구체 공급관21: first precursor supply pipe 22: second precursor supply pipe

23 : 가스분리모듈 24 : 혼합 분사구23: gas separation module 24: mixing nozzle

30 : 배기부 v/v : 밸브30: exhaust part v / v: valve

본 발명은 반도체 박막 증착 장치 중에서 원자층 증착 장치에 관한 것으로, 더욱 상세하게는 가스분리형 샤워헤드를 이용한 원자층 증착 장치에 관한 것이다.The present invention relates to an atomic layer deposition apparatus of a semiconductor thin film deposition apparatus, and more particularly to an atomic layer deposition apparatus using a gas separation shower head.

종래의 반도체 박막 증착 공정은 가스의 화학반응으로 형성된 입자들을 웨이퍼 표면에 증착시킬 수 있는 화학기상증착(CVD) 장치를 이용한 공정이 주로 사용되어 왔다.In the conventional semiconductor thin film deposition process, a process using a chemical vapor deposition (CVD) apparatus capable of depositing particles formed by a chemical reaction of gas on a wafer surface has been mainly used.

그러나 90㎚ 이하 공정에서는 불순물을 최대한 억제하면서 균일한 두께로 박막을 형성할 수 있는 원자층 증착(atomic layer deposition, 이하 ALD라 한다) 공정이 주로 사용되고 있다. However, in the 90 nm or less process, the atomic layer deposition (ALD) process which can form a thin film with uniform thickness, suppressing an impurity as much as possible is mainly used.

ALD는 화학적으로 달라붙는 현상을 이용해 웨이퍼 표면에 분자를 흡착시킨 후 치환시켜 흡착과 치환을 번갈아 진행하기 때문에 초미세 층간(layer-by-layer) 증착이 가능하고 산화물과 금속박막을 최대한 얇게 쌓을 수 있는 특징이 있다. 또 CVD보다 낮은 온도(500도 이하)에서 우수한 막질을 형성할 수 있어 시스템온칩(SoC) 제조에 적합하다는 것이 큰 장점이다.ALD absorbs molecules on the surface of the wafer by chemically adhering and then replaces them by alternately adsorbing and replacing them, enabling ultra-layer-by-layer deposition and stacking oxide and metal thin films as thinly as possible. There is a characteristic. In addition, since the film can be formed at a temperature lower than CVD (less than 500 degrees), it is a great advantage to be suitable for system-on-chip (SoC) manufacturing.

일반적인 ALD 공정은 하나의 전구체를 흡착하고, 퍼지, 다른 하나의 전구체를 흡착하고, 퍼지하는 사이클로 구성되고 이러한 사이클이 반복하는 것으로 공정이 수행된다.A typical ALD process consists of a cycle of adsorbing one precursor, purging, adsorbing and purging the other precursor and repeating this cycle.

그러나, 종래의 ALD 공정에 사용되는 ALD 장치는 그 샤워헤드의 구조가 증착기체와 반응기체가 개별적으로 공급되고, 샤워헤드에서 분사될 때에도 서로 다른 최종 분사구의 존재로 인하여 가스 흐름의 변화에 의한 공정조건의 일관성을 방해하고, 반응시간이 증가되는 단점이 있다.However, in the ALD apparatus used in the conventional ALD process, the structure of the showerhead is a process in which the gas flow changes due to the presence of different final injection holes even when the vaporizing gas and the reactive gas are separately supplied and sprayed from the showerhead. Disadvantages of condition consistency and increased reaction time.

본 발명은 상기와 같은 문제점을 해결하기 위하여 제안된 것으로서, 증착기 체와 반응기체의 분리 공급 및 이동이 가능하며, 증착기체와 반응기체의 최종 분사구가 하나의 혼합 분사구로 동일한 샤워헤드를 이용하여 샤워헤드 내에서의 부산물의 발생을 억제하고, 원자층 증착시 챔버 내에서 가스 흐름의 균일성을 유지할 수 있는 가스분리형 샤워헤드를 이용한 ALD 장치를 제공하는데 그 목적이 있다.The present invention has been proposed in order to solve the above problems, it is possible to separate supply and movement of the deposition gas and the reactor gas, the final injection port of the deposition gas and the reactor gas is a mixed nozzle using the same shower head shower It is an object of the present invention to provide an ALD device using a gas separation showerhead capable of suppressing the generation of by-products in the head and maintaining uniformity of gas flow in the chamber during atomic layer deposition.

상기 기술적 과제를 이루기 위한 본 발명에 따른 가스분리형 샤워헤드를 이용한 ALD 장치는 가스분리형 샤워헤드를 이용하여 원자층 증착(atomic layer deposition, 이하 ALD라 한다)을 하기 위한 장치에 있어서, 제1 전구체가 공급되는 제1 전구체(precursor) 공급원, 제2 전구체가 공급되는 제2 전구체 공급원, 퍼지 가스 공급원 및 상기 각각의 가스의 개폐 및 유량을 조절하는 다수의 밸브를 구비하는 가스 공급부; 상부에 상기 제1 전구체 공급원과 연결된 제1 전구체 공급관, 제2 전구체 공급원과 연결되는 제2 전구체 공급관을 구비하고, 하부에 상기 제1 전구체, 제2 전구체 및 퍼지 가스가 반응 챔버 내부로 개별적으로 분사되는 혼합 분사구를 구비하는 샤워헤드부; 및 배기펌프를 구비하며, 상기 퍼지 가스가 반응 챔버 내부로 분사될 때에 반응 챔버 내부의 잔류 가스를 반응 챔버 외부로 배출하는 배기부;를 포함하는 것을 특징으로 한다. In the ALD apparatus using a gas separation shower head according to the present invention for achieving the above technical problem, in the apparatus for atomic layer deposition (hereinafter referred to as ALD) using a gas separation shower head, the first precursor is A gas supply unit including a first precursor source to be supplied, a second precursor source to which the second precursor is supplied, a purge gas source, and a plurality of valves to control opening and closing of each gas; A first precursor supply pipe connected to the first precursor source and a second precursor supply pipe connected to the second precursor source, and a lower portion of the first precursor, the second precursor and the purge gas are separately injected into the reaction chamber. A shower head unit having a mixing jet hole; And an exhaust pump, wherein the exhaust unit discharges residual gas in the reaction chamber to the outside of the reaction chamber when the purge gas is injected into the reaction chamber.

이하에서는 본 발명의 구체적인 실시예를 도면을 참조하여 상세히 설명하도록 한다.Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명에 의한 가스분리형 샤워헤드를 이용한 ALD 장치를 개략적으로 나타낸 것으로, 가스 공급부(10), 샤워헤드부(20) 및 배기부(30)로 구성된다.1 schematically shows an ALD apparatus using a gas separation shower head according to the present invention, and includes a gas supply unit 10, a shower head unit 20, and an exhaust unit 30.

증착기체와 반응기체 및 퍼지가스가 공급되는 가스 공급부(10)는 제1 전구체가 공급되는 제1 전구체(precursor) 공급원(11), 제2 전구체가 공급되는 제2 전구체 공급원(12), 퍼지 가스 공급원(13) 및 각 가스의 개폐 및 유량을 조절할 수 있는 다수의 밸브(v/v 1 ~ v/v 4)로 구성된다.The gas supply unit 10 to which the deposition gas, the reactor gas, and the purge gas are supplied may include a first precursor source 11 to which the first precursor is supplied, a second precursor source 12 to which the second precursor is supplied, and a purge gas. It is composed of a source 13 and a plurality of valves (v / v 1 ~ v / v 4) that can adjust the opening and closing and flow rate of each gas.

제1 전구체 공급원(11) 및 제2 전구체 공급원(12)에 있는 제1, 제2 전구체는 가스 상태이다.The first and second precursors in the first precursor source 11 and the second precursor source 12 are gaseous.

도 2는 본 발명에 의한 ALD 장치의 샤워헤드부를 개략적으로 나타낸 것으로, 제1 전구체 공급관(21), 제2 전구체 공급관(22), 가스분리모듈(23) 및 혼합 분사구(24)로 구성된다. FIG. 2 schematically shows a showerhead of an ALD device according to the present invention, and includes a first precursor supply pipe 21, a second precursor supply pipe 22, a gas separation module 23, and a mixing nozzle 24.

제1 전구체 공급관(21)과 제2 전구체 공급관(22)은 제1 전구체와 제2 전구체가 샤워헤드부(20)로 분리되어 공급될 수 있도록 분리되어 있고, 가스 분리 모듈(23)에서는 제1 전구체와 제2 전구체가 분리되어 분사되도록 제1 전구체와 제2 전구체를 분리하여 제공하며, 제1 전구체와 제2 전구체는 별도의 분사구를 통하여 분사되지 않고, 혼합 분사구(24)를 공동으로 경유하여 반응챔버(1) 내부로 분사된다.The first precursor supply pipe 21 and the second precursor supply pipe 22 are separated so that the first precursor and the second precursor can be separately supplied to the showerhead 20, and the gas separation module 23 allows the first precursor supply pipe 21 to be separated. The first precursor and the second precursor are separated and provided to separate and spray the precursor and the second precursor, and the first precursor and the second precursor are not sprayed through separate injection holes, but through the mixed injection hole 24 jointly. It is injected into the reaction chamber (1).

도 1 및 도 2를 참조하면, 가스 공급부(10)로부터 공급된 가스들을 반응챔버(1) 내부로 분사하는 샤워헤드부(20)는 제1 전구체 공급원(11)과 연결된 제1 전구체 공급관(21), 제2 전구체 공급원(12)과 연결되는 제2 전구체 공급관(22) 및 샤워헤드부(20)의 하부에 위치하는 혼합 분사구(24)를 구비하며, 제1 전구체 및 제2 전구체가 제1 전구체 공급관(21) 및 제2 전구체 공급관(22)을 통하여 각각 분리되어 공급된 후에 제1 전구체 및 제2 전구체를 모두 분사되는 혼합 분사구(24)를 통하여 따로따로 분사된다.Referring to FIGS. 1 and 2, the shower head part 20 for injecting gases supplied from the gas supply part 10 into the reaction chamber 1 may include a first precursor supply pipe 21 connected to the first precursor source 11. ), A second precursor supply pipe 22 connected to the second precursor source 12, and a mixing injector 24 positioned below the showerhead portion 20, wherein the first precursor and the second precursor are formed of a first precursor. After being separately supplied through the precursor supply pipe 21 and the second precursor supply pipe 22, respectively, the first precursor and the second precursor are separately injected through the mixing nozzle 24 through which the first precursor and the second precursor are injected.

가스 공급부(10)의 퍼지가스 공급원(13)은 샤워헤드부(20)의 제1 전구체 공급관(21) 또는 제2 전구체 공급관(22) 중의 어느 하나의 공급관과 연결되어 있으며, 증착시 제1 전구체 또는 제2 전구체가 분사된 후 소정의 퍼지 가스가 혼합 분사구를 통하여 챔버 내부로 분사된다.The purge gas supply source 13 of the gas supply unit 10 is connected to any one of the first precursor supply pipe 21 or the second precursor supply pipe 22 of the shower head 20, and the first precursor during deposition. Alternatively, after the second precursor is injected, a predetermined purge gas is injected into the chamber through the mixing nozzle.

배기펌프를 구비하는 배기부(30)는 퍼지 가스가 반응 챔버(1) 내부로 분사될 때에 반응 챔버(1) 내부의 잔류 가스 등을 외부로 배출하며, 또한 가스 공급부(10)의 제1 전구체 공급원(12) 또는 제2 전구체 공급원(12)과 직접 연결되어, 제1 전구체가 샤워헤드로 분사되는 경우에는 제2 전구체 공급원(12)으로부터 제2 전구체를 반응 챔버(1)를 통하지 않고 직접 배기펌프로 흐르게 하고, 제2 전구체가 샤워헤드로 분사되는 경우에는 반대로 제1 전구체 공급원(11)으로부터 제1 전구체를 반응 챔버(1)를 통하지 않고 직접 배기펌프로 흐르게 한다.The exhaust unit 30 including the exhaust pump discharges residual gas and the like in the reaction chamber 1 to the outside when the purge gas is injected into the reaction chamber 1, and also the first precursor of the gas supply unit 10. Directly connected to either source 12 or second precursor source 12, where the first precursor is injected into the showerhead, the second precursor is directly evacuated from the second precursor source 12 without passing through the reaction chamber 1 When the second precursor is injected into the showerhead, the second precursor is flowed directly from the first precursor source 11 to the exhaust pump without passing through the reaction chamber 1.

표 1은 도 1에 기재된 다수의 밸브(v/v 1 ~ v/v 4)의 동작 순서의 일예를 나타낸 것이다.Table 1 shows an example of the operation sequence of the plurality of valves (v / v 1 ~ v / v 4) described in FIG.

구 분division v/v 1v / v 1 v/v 2v / v 2 v/v 3v / v 3 v/v 4v / v 4 제1 전구체 증착First precursor deposition RUNRUN DIVERTDIVERT CLOSECLOSE OPENOPEN 퍼지Fudge DIVERTDIVERT DIVERTDIVERT OPENOPEN OPENOPEN 제2 전구체 증착Second precursor deposition DIVERTDIVERT RUNRUN OPENOPEN CLOSECLOSE 퍼지Fudge DIVERTDIVERT DIVERTDIVERT OPENOPEN OPENOPEN

여기서 RUN은 반응 챔버(1)로 흐르는 것을, OPEN은 밸브가 열려있는 것을, CLOSE는 밸브가 닫혀있는 것을, 그리고 DIVERT는 반응 챔버(1)로 흐르지 않고 배기펌프(30)로 직접 흐르는 것을 의미한다.Where RUN means that it flows into the reaction chamber 1, OPEN means that the valve is open, CLOSE means that the valve is closed, and DIVERT means that it flows directly into the exhaust pump 30 without flowing into the reaction chamber 1. .

이상에서 본 발명에 대한 기술사상을 첨부 도면과 함께 서술하였지만 이는 본 발명의 바람직한 실시예를 예시적으로 설명한 것이지 본 발명을 한정하는 것은 아니다. 또한 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자라면 누구나 본 발명의 기술적 사상의 범주를 이탈하지 않는 범위 내에서 다양한 변형 및 모방이 가능함은 명백한 사실이다.The technical spirit of the present invention has been described above with reference to the accompanying drawings. However, the present invention has been described by way of example only, and is not intended to limit the present invention. In addition, it is apparent that any person having ordinary knowledge in the technical field to which the present invention belongs may make various modifications and imitations without departing from the scope of the technical idea of the present invention.

상술한 바와 같이, 본 발명에 의한 가스분리형 샤워헤드를 이용한 ALD 장치는 샤워헤드 내에서 증착기체와 반응기체가 서로 반응하지 않으므로 샤워헤드 내부에서 부산물의 발생을 억제할 수 있는 장점이 있다.As described above, the ALD apparatus using the gas separation showerhead according to the present invention has an advantage of suppressing the generation of by-products in the shower head since the deposition gas and the reactor gas do not react with each other in the shower head.

또한 본 발명에 의한 가스분리형 샤워헤드를 이용한 ALD 장치는 샤워헤드에서 증착기체와 반응기체가 분사되는 최종 분사구가 동일함으로 인하여 모든 공정 순서에서 챔버내 가스 흐름의 균일성을 유지할 수 있으며, 전체 증착공정 시간을 단축시킬 수 있는 장점이 있다.In addition, the ALD apparatus using a gas separation showerhead according to the present invention can maintain the uniformity of gas flow in the chamber in all the process sequence due to the same final injection hole in which the deposition gas and the reactor gas is injected in the shower head, the entire deposition process This has the advantage of reducing the time.

Claims (5)

가스분리형 샤워헤드를 이용하여 원자층 증착(atomic layer deposition, 이하 ALD라 한다)을 하기 위한 장치에 있어서,An apparatus for atomic layer deposition (hereinafter referred to as ALD) using a gas separation showerhead, 제1 전구체가 공급되는 제1 전구체(precursor) 공급원, 제2 전구체가 공급되는 제2 전구체 공급원, 퍼지 가스 공급원 및 상기 각각의 가스의 개폐 및 유량을 조절하는 다수의 밸브를 구비하는 가스 공급부;A gas supply unit including a first precursor source to which the first precursor is supplied, a second precursor source to which the second precursor is supplied, a purge gas source, and a plurality of valves to control opening and closing of each gas; 상부에 상기 제1 전구체 공급원과 연결된 제1 전구체 공급관, 제2 전구체 공급원과 연결되는 제2 전구체 공급관을 구비하고, 하부에 상기 제1 전구체, 제2 전구체 및 퍼지 가스가 반응 챔버 내부로 개별적으로 분사되는 혼합 분사구를 구비하는 샤워헤드부; 및A first precursor supply pipe connected to the first precursor source and a second precursor supply pipe connected to the second precursor source, and a lower portion of the first precursor, the second precursor and the purge gas are separately injected into the reaction chamber. A shower head unit having a mixing jet hole; And 배기펌프를 구비하며, 상기 퍼지 가스가 반응 챔버 내부로 분사될 때에 반응 챔버 내부의 잔류 가스를 반응 챔버 외부로 배출하는 배기부;를 포함하는 것을 특징으로 하는 가스분리형 샤워헤드를 이용한 ALD 장치.And an exhaust pump, and an exhaust unit for discharging the residual gas in the reaction chamber to the outside of the reaction chamber when the purge gas is injected into the reaction chamber. 제1항에 있어서, 상기 퍼지 가스 공급원은The method of claim 1 wherein the purge gas source is 상기 제1 전구체 공급관 및 상기 제2 전구체 공급관 중에서 적어도 하나와 연결되어 있는 것을 특징으로 하는 가스분리형 샤워헤드를 이용한 ALD 장치.An ALD device using a gas separation shower head, characterized in that connected to at least one of the first precursor supply pipe and the second precursor supply pipe. 제1항에 있어서, 상기 퍼지 가스는The method of claim 1, wherein the purge gas 상기 제1 전구체 또는 상기 제2 전구체가 분사된 후에 상기 혼합 분사구를 통하여 반응 챔버 내부로 분사되는 것을 특징으로 하는 가스분리형 샤워헤드를 이용한 ALD 장치.And the first precursor or the second precursor is injected into the reaction chamber through the mixing nozzle, and the ALD device using the gas separation shower head. 제1항에 있어서, 상기 배기부는The method of claim 1, wherein the exhaust unit 상기 제1 전구체 공급원과 직접 연결되어, 상기 제2 전구체가 분사되는 경우에 상기 제1 전구체 공급원으로부터 제1 전구체를 상기 반응 챔버를 통하지 않고 직접 상기 배기펌프로 흐르게 하는 것을 특징으로 하는 가스분리형 샤워헤드를 이용한 ALD 장치.A gas separation showerhead connected directly to the first precursor source to flow the first precursor from the first precursor source directly into the exhaust pump without passing through the reaction chamber when the second precursor is injected ALD device using. 제1항에 있어서, 상기 배기부는The method of claim 1, wherein the exhaust unit 상기 제2 전구체 공급원과 직접 연결되어, 상기 제1 전구체가 분사되는 경우에 상기 제2 전구체 공급원으로부터 제2 전구체를 상기 반응 챔버를 통하지 않고 직접 상기 배기펌프로 흐르게 하는 것을 특징으로 하는 가스분리형 샤워헤드를 이용한 ALD 장치.A gas separation showerhead connected directly to the second precursor source to flow a second precursor from the second precursor source directly into the exhaust pump without passing through the reaction chamber when the first precursor is injected ALD device using.
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