KR20070063913A - Group iii nitride light receiving and emitting devices using transparent conducting oxynitride-based multi n-type schottky and ohmic contact layers and method of manufacturing thereof - Google Patents

Abstract

An optical device and its manufacturing method are provided to improve current-voltage characteristics and to enhance the efficiency of device by enhancing ohmic contact interfacial characteristics with an N type nitride based clad layer using a TCON(Transparent Conducting OxyNitride) layer. A high transparent multi-N type schottky contact layer(20) is formed on an N type nitride based clad layer(10). The high transparent multi-N type schottky contact layer includes at least one TCON layer. The main gradient of the TCON layer is one selected from a group consisting of In, Zn, Cd, Ga, Al, Mg, Ti, Mo, Ta, V, Cr, Nb, Zr, Ag, Ni, Cu, Co, Au, Pt, Re, Ir, W, Ru or Pd.

Description

Group III nitride light receiving and emitting devices using transparent conducting oxynitride-based multi n- form a transparent conductive nitrogen oxide-based high-transparent multi-encheque schottky contact layer and an ohmic contact layer type Schottky and ohmic contact layers and method of manufacturing Julia}

1 illustrates a highly transparent N- type multi Schottky contact layer structure formed on an N- type nitride-based cladding layer, according to a first embodiment of the present invention. It is a cross section shown,

FIG. 2 illustrates a highly transparent N- type multi ohmic contact layer structure formed on an N- type nitride-based cladding layer according to a second embodiment of the present invention. It is a cross section shown,

   3 is a cross-sectional view illustrating various stacked forms of a highly transparent multiple N-type schottky contact layer and an ohmic contact layer formed on an upper portion of an N-type nitride clad layer according to the first and second embodiments of the present invention.

   FIG. 4 is a highly transparent multi-en nitride nitride schottky contact layer and an ohmic contact layer formed after introduction of nanometer scale particles in an upper portion of an en-type nitride clad layer according to the first and second embodiments of the present invention. This is a cross-sectional view of several stacked shapes of

   FIG. 5 is a cross-sectional view of a group III nitride light emitting device in which a highly transparent multi-en ohmic contact layer developed in accordance with embodiments 2, 3, and 4 of the present invention is applied to an upper portion of an en-type nitride cladding layer.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride based light emitting device and a method of manufacturing the same, and more specifically, to a transparent conductive thin film material (FIG) which is superior to a transparent conducting oxide or nitride (TCO or TCN). In other words, by developing a transparent conducting oxynitride (TCON) with low electrical resistance and high light transmittance, group III N- type nitride Development of highly transparent N- type multi Schottky and ohmic contact layers of highly-based semiconductors and nitride-based light-receiving and light emitting devices (group III N- type nitride-based light receiving and applying them) emitting devices) and a method of manufacturing the same.

   Currently, transparent conducting thin films are widely used in the optoelectronic field using organic and inorganic materials, sensors and displays, and in the energy industry. In particular, in the field of semiconductor light receiving and light emitting devices such as photo-detector, light emitting diode (LED), and laser diode (LD) in the field of sensors and displays, smooth carrier controlling, In addition to carrier injection and current spreading, photons generated in the active layer of the semiconductor light emitting device are used to receive as much light as possible with various wavelength bands incident from the outside. It should be a material having both electrical and optical properties so that photon) can be emitted as much as possible to the outside. Above all, many domestic and foreign research institutes related to group III nitride light emitting diodes (III nitride LEDs), which are spotlighted as next generation lighting sources, are actively researching to develop high quality transparent conductive thin films for light receiving and light emitting devices. . As a result, transparent conductive materials such as well-known indium tin oxide (ITO) and doped zinc oxide (ZnO) with various impurities have recently been directly or indirectly connected to electrodes of nitride-based light emitting diodes (LEDs). Is being used.

   Among the various transparent conductive oxides (TCO), the most actively researched materials are indium oxide (In2O3), tin oxide (SnO2), cadmium oxide (CdO), zinc oxide (ZnO), and indium tin oxide (ITO). In addition, since they have relatively small work function values and rapid light transmittance reduction characteristics in the wavelength range of visible and ultraviolet light, they have many problems when used as transparent electrodes of nitride-based light emitting diodes (LEDs). The problems encountered with these materials, which are currently being used in part in nitride-based light-receiving and light-emitting diodes, are summarized below.

First, conventional transparent conductive oxides (TCOs) or nitrides (TCNs) are relatively incompatible with the electrical properties of the N- type nitride-based cladding layer surface, and thus, N- type nitride-based Shocky and ohmic contact electrode structures When used as a furnace, smooth control and injecting of the carrier flow at the interface becomes difficult, and thus, there are many difficulties in implementing a light receiving and light emitting diode having effective external light reception and high external light emission efficiency.

   Second, conventional transparent conductive oxides (TCOs) or nitrides (TCNs) have a low light transmittance below the wavelength range with blue light among the light generated and emitted from nitride-based light-receiving and light-emitting diodes, so that light in the short-wavelength region is received and It is difficult to apply to the element which emits light. Third, the conventional transparent conductive oxide (TCO) or nitride (TCN) has a large value of the refractive index of light close to about 2, so the light can be freely admitted to the air through these transparent conductive thin film electrodes. There is a difficulty in getting out.

   Currently, Group III nitride semiconductors are widely used to commercialize light emitting devices such as light emitting diodes (LEDs) and laser diodes (LDs), as well as sensors such as transistors and photo-detectors. In order to implement an optoelectronic device having better performance than the present, contact control technology, which is an interface property between a group III nitride semiconductor and an electrode, is very important.

In particular, a light emitting diode (LED) using a nitride semiconductor composed of indium nitride (InN), gallium nitride (GaN), and aluminum nitride (AlN) is a mesa structure light emitting diode (MESA-) depending on the substrate applied to the final device. structured light emitting diodes and vertical structure light emitting diodes. Mesa structure light emitting diodes, which are widely used at present, are light emitting device structures fabricated when an insulating substrate such as sapphire is used. As a result, the nitride-based cladding layer, which is buried in a lower layer, is air-etched through an etching process. It is an element type that is made by forming two parallel ohmic contact electrode structures by exposing it to the middle. Group III nitride-based mesa structure light emitting diodes generally have an N- type nitride-based cladding layer on top of an insulating sapphire, which is the first growth substrate, and a P- type nitride-based cladding layer. A structure that grows earlier than) is preferable and widely used in terms of technology and device performance. In the mesa structure light emitting diode structure, light (= photon) generated in the active layer is emitted through the nitride nitride cladding layer directly in contact with the nitride nitride cladding layer.

On the other hand, the vertical light emitting diode uses silicon (Si), silicon carbide (SiC), or a general metal thick film as a final substrate, and the vertical light emitting diode has a relatively high heat dissipation generated when driven compared to a mesa structure light emitting diode. Because it is easy and has a large area light emitting area, it is manufactured as a high brightness large capacity light emitting device. In particular, a vertical structure light emitting diode used as a high-brightness high-capacity light emitting device, as opposed to a mesa structure light emitting diode, uses a highly reflective P- type ohmic contact layer to generate light from an active layer. In general, a structure for emitting light through the N-type nitride cladding layer present in the upper layer portion is produced.

As described above, the mesa structure light emitting diode in which the light generated in the active layer emits light through the P- type cladding layer is due to the low hole concentration of the nitride nitride cladding layer. It is difficult to transport holes, which are cortical carriers in all directions from the upper layer, so that high quality optoelectronic contacts having excellent current spreading are required to make high quality optoelectronic devices using such a nitride-based cladding layer. A layer is absolutely necessary. In other words, in order to realize a high-brightness mesa structure light emitting diode having a nitride-based cladding layer disposed on the upper layer, it has excellent current spreading in the lateral direction and hole injecting in the vertical direction, and at the same time, visible light and short wavelength. An ohmic contact electrode structure having excellent optical properties (light transmittance or light reflectivity) with respect to light in a region must be developed / formed. Furthermore, a high quality, high-transparent, ohmic contact layer is absolutely necessary to emit the generated light onto the nitride-based cladding layer rather than through the transparent sapphire substrate. The meso structured light emitting diode for mesa structure light emitting diode which emits light through the nitride nitride cladding layer which is widely used at present is a nickel-gold (Ni-Au) electrode structure oxidized on the nitride nitride clad layer upper layer. A thin film layer of Ni-Au was sequentially deposited on the nitride nitride clad layer using an e-beam evaporator, and then heat-treated in an oxygen (O2) atmosphere to obtain a specific contact resistance of about 10-3 to 10-4 Ω㎠. It is known to form a semi-transparent ohmic contact layer with specific ohmic contact resistance. The oxidized nickel-gold ohmic contact layer has a low light transmittance of 75% or less at 460 nanometers (nm) or less, which is a wavelength range of blue light, and thus is not suitable for the next type ohmic layer for nitride-based light emitting diodes. The low specific contact resistance of the oxidized semi-transparent Ni-Au ohmic contact layer is characterized by gallium nitride (GaN) and ohmic forming a type nitride nitride cladding layer when subjected to heat treatment in a temperature of 500 ° C. to 600 ° C. and an oxygen (O 2) gas atmosphere. At the contact interface with the nickel (Ni) metal applied as a contact layer, a nickel oxide (NiO), a semiconductor semiconductor oxide, is formed in an island shape, and at the same time between the nickel oxide (NiO) in which the gold (Au) metal is distributed in an island shape. It was found to have a structure covering the upper layer. In particular, nickel oxide (NiO) is formed when Ni-Au thinly deposited on the upper layer of the nitride-based cladding layer is heat-treated in an oxygen atmosphere, which is the height and width of the Schottky barrier formed between gallium nitride (GaN) and the electrode (Schottky). Barrier height & width (SBH & SBW) is reduced and carriers are easily supplied to the device when an external voltage is applied through these electrodes. The reason why the thin film layer made of thin Ni-Au oxidized as described above showed excellent ohmic behavior, which is an excellent electrical property, was not only a role of nickel oxide leading to reduction of SBH & SBW, but also a gold (Au) which mainly improves current spreading in the lateral direction. ) Is a metal component. In addition to the mechanism of the ohmic behavior of the Ni-Au thin film layer oxidized as described above, a thin film layer made of thin Ni-Au is formed on the upper layer of the nitride-based cladding layer and then heat treated to form an effective hole in the nitride-based cladding layer. Surface of the nitride nitride clad layer through a reactivation process that removes the Mg-H intermetallic compound, which limits the net effective hole concentration, to increase the magnesium dopant concentration on the surface of the nitride nitride clad layer. It is understood that in this case, the effective hole concentration becomes higher than 1018, resulting in tunneling transport between the nitride-based cladding layer and the ohmic contact layer containing nickel oxide, thereby exhibiting ohmic behavior with low specific resistance. . However, the vertical structure light emitting diode using a semi-transparent, ohmic contact layer formed of oxidized Ni-Au contains gold (Au) metal components that hinder the light transmittance, so the external light emitting efficiency is low, so that it will be applied for a large area and high-brightness lighting in the future. Has a limitation.

   Recently, in order to overcome some of the limitations of low luminous efficiency of a high-brightness mesa structure light emitting diode device having a nitride-based cladding layer on an upper layer, it has better light transmittance than a semi-transparent Ni-Au structure that is conventionally used as an ohmic contact layer. Research on the use of transparent conductive oxides, such as ITO, is described in T. Margalith et al., Appl. Phys. Lett. Vol. 74. p3930 (1999). Recently, the use of the ITO ohmic contact layer has realized that a vertical structure light emitting diode exhibiting an improved output power compared to a conventional oxidized Ni-Au structure has been described in various materials [Solid-State Electronics vol.47. p849 (2003). However, the ohmic contact layer of such a structure can increase the output of the light emitting diode, but has a problem of showing a relatively high operating voltage. The root cause is relatively higher than the work function of the nitride-based semiconductor as described above. Because of its small value, a high Schottky barrier is formed at the interface between the nitride-based cladding layer and the ITO ohmic contact layer, which makes it difficult to inject a carrier smoothly, resulting in a large amount of heat generation and a short device life. As described above, when TCOs such as ITO and ZnO are directly deposited / contacted on the upper layer of the nitride-based cladding layer, high and thick SBH and SBW are generated, respectively, to form an ohmic contact layer. The GIST research group inserts a thin second TCO layer between the type nitride-based cladding layer and the TCOs and heats them to form particles of less than 100 nanometers (nm) in order to produce a high quality ohmic contact layer. The results of the formation were announced. The nanoparticles generated at these interfaces generate an electric field at the interface, and this induced electric field lowers the height and width of the schottky barrier and converts the TCO electrode exhibiting schottky behavior into ohmic behavior. Was analyzed. However, the development of a high-quality, high-transparent, ohmic contact layer using the above-described techniques and the vertical structure LED using the vertical structure are too difficult to be utilized as a next-generation lighting source due to the limitation of the light emitting area and the heat dissipation generated when driving the device. This lies.

   In order to widely utilize group III nitride-based light emitting devices as a next-generation lighting source, a large-area large-capacity high-brightness light emitting device should be manufactured. For this purpose, a light emitting device is placed on an upper layer of silicon carbide (SiC) growth substrate having excellent electrical and thermal conductivity. A vertical structure light emitting diode incorporating a conductive thick film substrate by introducing a laser lift-off (LLO) technique, which is a fabrication or sapphire growth substrate removal technique using a laser which is a strong energy beam, is preferable. In particular, vertical light emitting diodes using LLO and conductive thick film grafts have a high reflection type ohmic contact layer and a high-transparent en-type ohmic contact in which the en-nitride-based cladding layer is located on the upper layer than the cladding layer, and the light generated from the active layer is placed on the lower layer. The form using a layer is mainly used. As described above, the highly transparent en-type ohmic contact layer of the vertical light emitting diode is mainly used as a transparent electrode, transparent conductive oxide (TCO) and transparent conductive nitride (TCN) having various limitations.

The present invention provides a better performance as a transparent conductive thin film material than transparent conductive oxides (TCO) and nitrides (TCN), namely low electrical resistance and high light transmittance. Has developed a transparent conducting oxynitride (TCON) with high transparent multi- N Schottky contact and ohmic contact electrode structures of group III N- type nitride-based semiconductors. The purpose of the present invention is to develop -type Schottky and ohmic contact layers, and to provide a group III N- type nitride-based light receiving and emitting devices and a method of manufacturing the same.

In order to achieve the above object, a nitride based light emitting device according to the present invention includes a nitride based active layer between a P- type nitride cladding layer and an N- type nitride cladding layer. In a nitride-based light emitting device having an active layer (especially, a light emitting diode and a laser diode), a high-transparent multi-en-type including at least one or more transparent conducting oxynitride (TCON) at the upper portion of the en-type nitride-based cladding layer. It has a highly transparent multi N- type ohmic contact layer, the transparent conductive nitrogen oxide (TCON) is indium (In), tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga) ), Aluminum (Al), magnesium (Mg), titanium (Ti), molybdenum (Mo), tantalum (Ta), vanadium (V), chromium (Cr), niobium (Nb), zirconium (Zr), silver ( Ag), nickel (Ni), copper (Cu), cobalt (Co), gold (Au), white At least one of gold (Pt), rhenium (Re), iridium (Ir), tungsten (W), ruthenium (Ru), or palladium (Pd) metals as a main component, and oxygen (O) and nitrogen (N) ) Refers to a material formed by bonding at the same time. Preferably, the transparent conductive nitrogen oxide (TCON) may further include other metal components as dopants in order to control electrical properties. Herein, the metals applied as dopants are applied with elements classified as metals on the periodic table of elements. In addition to the metal material to be applied as a dopant, it is preferable to include fluorine (F) and sulfur (S). In addition, the addition ratio of the dopant to the transparent conductive nitrogen oxide (TCON) is preferably applied to 0.001 to 20 weight percent (wt.%).

   According to still another aspect of the present invention, the highly transparent multi-en-type ohmic contact layer, in addition to the transparent conductive nitrogen oxide (TCON), is advantageous for forming an ohmic contact electrode on the upper layer of the en-type nitride-based clad layer as follows. It can be formed by incorporating an alloy / solid solution, a general conducting oxide, a transparent conducting oxide (TCO), and a transparent conducting nitride (TCN) as a matrix regardless of the stacking order. .

   Metals and alloys / solid solutions based on these metals: aluminum (Al), magnesium (Mg), titanium (Ti), molybdenum (Mo), tantalum (Ta), vanadium (V) ), Chromium (Cr), niobium (Nb), zirconium (Zr), rhenium (Re), gold (Au), rhodium (Rh), ruthenium (Ru), tungsten (W), iridium (Ir), silver ( Ag), zinc (Zn), copper (Cu), cobalt (Co), tin (Sn), rare earth metals, or alloys / solids based on these metals.

   General conducting oxide: Nickel oxide (Ni-O), rhodium oxide (Rh-O), ruthenium oxide (Ru-O), iridium oxide (Ir-O), copper oxide (Cu-O), cobalt Oxide (Co-O), tungsten oxide (WO), chromium oxide (Cr-O), vananium oxide (VO), or titanium oxide (Ti-O).

   Transparent conductive oxide (TCO): indium oxide (In2O3), tin oxide (SnO2), indium tin oxide (ITO), zinc oxide (ZnO), magnesium (MgO), cadmium oxide (CdO), magnesium zinc oxide (MgZnO) , Indium zinc oxide (InZnO), indium tin oxide (InSnO), copper aluminum oxide (CuAlO2), silver oxide (Ag2O), gallium oxide (Ga2O3), zinc tin oxide (ZnSnO), zinc indium tin oxide (ZITO), Or other oxides to which these transparent conductive oxides are combined.

   Transparent conductive nitride (TCN): titanium nitride (TiN), chromium nitride (CrN), tungsten (WN), tantalum (TaN), niobium (NbN).

   More preferably, a third material, ie, a dopant, may be added to the above-described oxides and nitrides in order to improve the electrical properties of these materials.

In addition, in order to achieve the above object, a method of manufacturing a group III nitride light emitting device according to the present invention includes a P- type nitride cladding layer and an N- type nitride cladding layer. In the manufacturing method of the nitride-based light emitting device having a nitride active layer (nitride active layer) in between,

   end. A light emitting structure in which a nitride-based cladding layer, an active layer, and an en-nitride-based cladding layer are sequentially stacked on an upper portion of a conductive substrate, and include at least one or more transparent conducting oxynitride (TCON) above the en-type nitride-based cladding layer. Stacking a high transparent multiple N type ohmic contact layer;

   I. And heat treating the stacked multi-electrode layers to form a high quality ohmic contact interface. The transparent conductive nitrogen oxide (TCON) may include indium (In) and tin (Sn). ), Zinc (Zn), cadmium (Cd), gallium (Ga), aluminum (Al), magnesium (Mg), titanium (Ti), molybdenum (Mo), tantalum (Ta), vanadium (V), chromium ( Cr), niobium (Nb), zirconium (Zr), silver (Ag), nickel (Ni), copper (Cu), cobalt (Co), gold (Au), platinum (Pt), rhenium (Re), iridium ( It refers to a material formed by combining at least one of Ir, tungsten (W), ruthenium (Ru), or palladium (Pd) metal as a main component and oxygen (O) and nitrogen (N) must be bonded at the same time.

   The heat treatment step is preferably performed for 10 seconds to 3 hours at 100 to 800 degrees. The heat treatment may include a gas atmosphere including at least one of nitrogen (N 2), oxygen (O 2), hydrogen (H 2), air, argon (Ar), or helium (He) gas in the reactor in which the ohmic contact electrode body is embedded. Perform on

Hereinafter, with reference to the accompanying drawings, the invention of a highly transparent multi N- type Schottky and ohmic contact layers of the present invention and group III-nitride-based light-receiving and light-emitting device to which they are applied and the same The manufacturing method will be described in more detail.

   In the drawings referred to in the following description, elements having the same function are denoted by the same reference numerals.

1 illustrates a highly transparent N- type multi Schottky contact layer structure formed on an N- type nitride-based cladding layer, according to a first embodiment of the present invention. It is sectional drawing shown.

   Referring to the drawings, FIG. 1 (a) is a cross-sectional view in which the high-transparent multiple N-type schottky contact layer 20 is directly stacked on the N-type nitride-based cladding layer 10, whereas FIG. 1 (b) is shown in FIG. Unlike the N-type nitride cladding layer, the tunnel junction layer 30 is inserted before the highly transparent multiple N-type schottky contact layer 20 is formed on the N-type nitride cladding layer to form a more excellent schottky contact electrode structure.

   In detail, the N-type nitride cladding layer 10 is formed on the basis of any compound selected from AlxInyGazN (x, y, z: integer), which is a general formula of the III-nitride-based compound, and is formed on the N-type nitride cladding layer 10. The dopants, group 4 elements, silicon (Si), low manganese (Ge), selenium (Se), or terenium (Te) and the like are preferentially added alone or simultaneously.

   As described above, the high-transparent multiple N-type schottky contact electrode structure 20, which is the core technology of the present invention, includes at least one or more transparent conducting oxynitride (TCON) on the N-type nitride-based cladding layer 10. The transparent conductive nitrogen oxide (TCON) is provided with a high-transparency multiple N type schottky contact layer (20), and indium (In), tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga), and aluminum (Al). ), Magnesium (Mg), titanium (Ti), molybdenum (Mo), tantalum (Ta), vanadium (V), chromium (Cr), niobium (Nb), zirconium (Zr), silver (Ag), nickel ( Ni), copper (Cu), cobalt (Co), gold (Au), platinum (Pt), rhenium (Re), iridium (Ir), tungsten (W), ruthenium (Ru), or palladium (Pd) metals Among them, at least one or more components are the main components, and oxygen (O) and nitrogen (N) are materials formed by combining at the same time. Preferably, the transparent conductive nitrogen oxide (TCON) may further include other metal components as dopants in order to control electrical properties. Herein, the metals applied as dopants are applied with elements classified as metals on the periodic table of elements. In addition to the metal material to be applied as a dopant, it is preferable to include fluorine (F) and sulfur (S). In addition, the addition ratio of the dopant to the transparent conductive nitrogen oxide (TCON) is preferably applied at 0.001 to 20 weight percent (wt.%).

   According to another aspect of the present invention, in addition to the transparent conductive nitrogen oxide (TCON), the highly transparent multiple N-type schottky contact electrode structure 20 is advantageous in forming a schottky contact interface on the N-type nitride-based cladding layer 10 as described below. Regardless of the stacking order, together with metals and alloys / solid solutions based on these metals, common conducting oxides, transparent conductive oxides (TCOs), and transparent conductive nitrides (TCNs) It can be formed by grafting.

   Metals and alloys / solid solutions based on these metals: platinum (Pt), palladium (Pd), nickel (Ni), gold (Au), rhodium (Rh), ruthenium (Ru) ), Iridium (Ir), silver (Ag), zinc (Zn), magnesium (Mg), beryllium (Be), copper (Cu), cobalt (Co), tin (Sn), rare earth metals Or an alloy / solid solution based on these metals.

   General conducting oxide: Nickel oxide (Ni-O), rhodium oxide (Rh-O), ruthenium oxide (Ru-O), iridium oxide (Ir-O), copper oxide (Cu-O), cobalt Oxide (Co-O), tungsten oxide (WO), or titanium oxide (Ti-O).

   Transparent conductive oxide (TCO): indium oxide (In2O3), tin oxide (SnO2), indium tin oxide (ITO), zinc oxide (ZnO), magnesium (MgO), cadmium oxide (CdO), magnesium zinc oxide (MgZnO) , Indium zinc oxide (InZnO), indium tin oxide (InSnO), copper aluminum oxide (CuAlO2), silver oxide (Ag2O), gallium oxide (Ga2O3), zinc tin oxide (ZnSnO), zinc indium tin oxide (ZITO), or Still other oxides to which these transparent conductive oxides are combined.

   Transparent conductive nitride (TCN): titanium nitride (TiN), chromium nitride (CrN), tungsten (WN), tantalum (TaN), or niobium (NbN).

  More preferably, a third material, ie, a dopant, may be added to the above-described oxides and nitrides in order to improve the electrical properties of these materials.

  In addition, it is preferable that the high-transparent multiple N-type schottky contact layer 20 is formed to a thickness of 1 nanometer to 1000 nanometers.

  In addition, the deposition temperature applied to form the high-transparent multiple N type schottky contact layer 20 is in the range of 20 degrees to 1500 degrees, and the pressure in the evaporator is performed at atmospheric pressure to about 10-12 torr.

  In addition, after the highly transparent multiple N type schottky contact layer 20 is formed, it is preferable to undergo an annealing process. Annealing is performed at a temperature in the reactor at 100 to 800 degrees for 10 seconds to 3 hours in a vacuum or gas atmosphere. At least one gas of nitrogen, argon, helium, oxygen, hydrogen, or air may be applied to the gas introduced into the reactor during the heat treatment.

The tunnel junction layer 30 introduced in FIG. 1 (b) is Al a In b Ga c N x P y As z (a, b, c, x, y, z; integer consisting of Group 3-5 elements) A single layer, preferably a bi-layer, a tri-layer, or more, formed to a thickness of 50 nanometers (nm) or less based on a selected compound of It may be formed in a laminated structure.

  Preferably, the superlattice structure already known in the literature is referred to as the tunnel junction layer 30. For example, a thin lamination structure formed of Group 3-5 elements such as InGaN / GaN, AlGaN / GaN, AlInN / GaN, AlGaN / InGaN, AlInN / InGaN, AlN / GaN, or AlGaAs / InGaAs, and the like, and have a maximum of 30 pairs repeatedly. Up to 30 pairs can be laminated.

   More preferably, it refers to a single crystal, poly-crystal, or amorphous material layer to which group group elements (Mg, Be, Zn) or group group elements (Si, Ge) are added.

  The method of forming each layer is physical such as electron beam or thermal evaporator, pulsed laser deposition using laser energy source, dual-type thermal evaporator sputtering, etc. It is formed by chemical vapor deposition (CVD) using chemical reactions such as physical vapor deposition (PVD), electroplating, and metal-organic chemical vapor deposition.

FIG. 2 illustrates a highly transparent N- type multi ohmic contact layer structure formed on an N- type nitride-based cladding layer according to a second embodiment of the present invention. It is sectional drawing shown.

   In detail, the N-type nitride cladding layer 160 is formed based on any compound selected from AlxInyGazN (x, y, z: integer), which is a general formula of a group III nitride compound, and is formed on the N-type nitride cladding layer 160. The dopants, Group 4 elements, silicon (Si), low manganese (Ge), selenium (Se), terenium (Te) and the like are added alone or simultaneously.

   As described above, the high-transparent multi-en ohmic contact electrode structure 40, which is the core technology of the present invention, includes at least one or more transparent conducting oxynitride (TCON) on the upper layer of the en-type nitride-based cladding layer 160. It is provided with a highly transparent multi-en ohmic contact layer 40, the transparent conductive nitrogen oxide (TCON) is indium (In), tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga), aluminum (Al ), Magnesium (Mg), titanium (Ti), molybdenum (Mo), tantalum (Ta), vanadium (V), chromium (Cr), niobium (Nb), zirconium (Zr), silver (Ag), nickel ( Ni), copper (Cu), cobalt (Co), gold (Au), platinum (Pt), rhenium (Re), iridium (Ir), tungsten (W), ruthenium (Ru), or palladium (Pd) metals Among them, at least one or more components are the main components, and oxygen (O) and nitrogen (N) are combined to form a material. Preferably, the transparent conductive nitrogen oxide (TCON) may further include other metal components as dopants in order to control electrical properties. Herein, the metals applied as dopants are applied with elements classified as metals on the periodic table of elements. In addition to the metal material to be applied as a dopant, it is preferable to include fluorine (F) and sulfur (S). In addition, the addition ratio of the dopant to the transparent conductive nitrogen oxide (TCON) is preferably applied to 0.001 to 20 weight percent (wt.%).

   According to another aspect of the present invention, in addition to the transparent conductive nitrogen oxide (TCON), the highly transparent multiple N type ohmic contact layer 40 is advantageous to form an ohmic contact electrode on the upper layer of the N type nitride based cladding layer 160 as follows. Regardless of the stacking order, together with metals and alloys / solid solutions based on these metals, common conducting oxides, transparent conductive oxides (TCOs), and transparent conductive nitrides (TCNs) It can be formed by grafting. Metals and alloys / solid solutions based on these metals: aluminum (Al), magnesium (Mg), titanium (Ti), molybdenum (Mo), tantalum (Ta), vanadium (V) ), Chromium (Cr), niobium (Nb), zirconium (Zr), rhenium (Re), gold (Au), rhodium (Rh), ruthenium (Ru), tungsten (W), iridium (Ir), silver ( Ag), zinc (Zn), copper (Cu), cobalt (Co), tin (Sn), rare earth metals, or alloys / solids based on these metals.

   General conducting oxide: Nickel oxide (Ni-O), rhodium oxide (Rh-O), ruthenium oxide (Ru-O), iridium oxide (Ir-O), copper oxide (Cu-O), cobalt Oxide (Co-O), tungsten oxide (WO), chromium oxide (Cr-O), vananium oxide (VO), or titanium oxide (Ti-O).

   Transparent conductive oxide (TCO): indium oxide (In2O3), tin oxide (SnO2), indium tin oxide (ITO), zinc oxide (ZnO), magnesium (MgO), cadmium oxide (CdO), magnesium zinc oxide (MgZnO) , Indium zinc oxide (InZnO), indium tin oxide (InSnO), copper aluminum oxide (CuAlO2), silver oxide (Ag2O), gallium oxide (Ga2O3), zinc tin oxide (ZnSnO), zinc indium tin oxide (ZITO), or Still other oxides to which these transparent conductive oxides are combined.

   Transparent conductive nitride (TCN): titanium nitride (TiN), chromium nitride (CrN), tungsten (WN), tantalum (TaN), niobium (NbN).

   More preferably, a third material, ie, a dopant, may be added to the above-described oxides and nitrides in order to improve the electrical properties of these materials.

   In addition, the highly transparent multiple N-type ohmic contact layer 40 is preferably formed to a thickness of 1 nanometer to 1000 nanometers.

   In addition, the deposition temperature applied to form the high transparent multi-en ohmic contact layer 40 is in the range of 20 degrees to 1500 degrees, the pressure in the evaporator is performed at atmospheric pressure to about 10-12 torr (torr).

   In addition, after the highly transparent multiple N type ohmic contact layer 40 is formed, it is preferable to undergo an annealing process. Annealing is performed at a temperature in the reactor at 100 to 800 degrees for 10 seconds to 3 hours in a vacuum or gas atmosphere. At least one gas of nitrogen, argon, helium, oxygen, hydrogen, or air may be applied to the gas introduced into the reactor during the heat treatment.

The tunnel junction layer 180 introduced in FIG. 2 (b) is Al a In b Ga c N x P y As z (a, b, c, x, y, z; integer consisting of Group 3-5 elements) A single layer, preferably a bi-layer, a tri-layer, or more, formed to a thickness of 50 nanometers (nm) or less based on a selected compound of It may be formed in a laminated structure.

   Preferably, the superlattice structure already known in various literatures is referred to as the tunnel junction layer 180. For example, a thin lamination structure formed of Group 3-5 elements such as InGaN / GaN, AlGaN / GaN, AlInN / GaN, AlGaN / InGaN, AlInN / InGaN, AlN / GaN, or AlGaAs / InGaAs, and the like, and have a maximum of 30 pairs repeatedly. Up to 30 pairs can be laminated.

    More preferably, it refers to a single crystal, poly-crystal, or amorphous material layer to which group group elements (Mg, Be, Zn) or group group elements (Si, Ge) are added.

   The method of forming each layer is physical such as electron beam or thermal evaporator, pulsed laser deposition using laser energy source, dual-type thermal evaporator sputtering, etc. It is formed by chemical vapor deposition (CVD) using chemical reactions such as physical vapor deposition (PVD), electroplating, and metal-organic chemical vapor deposition.

   3 is a cross-sectional view illustrating various stacked shapes of high-transparent multi-en-schoke contact and ohmic contact electrode structures formed on an upper portion of an en-type nitride cladding layer according to the first and second embodiments of the present invention.

   In detail, the high-transparency multiple N-type schottky contact layer 20 and the ohmic contact layer 40 formed by being stacked on the upper portion of the N-type nitride cladding layer 10 or 160 may further include at least the above-described transparent conductive nitrogen oxide (TCON). The structure of the multilayer form which is more than the monolayer or bilayer containing more than one is preferable.

   FIG. 4 shows a highly transparent multi-en nitride nitride schottky contact and ohmic contact electrode structure formed after introducing nanometer scale particles into an upper portion of an en-type nitride clad layer according to the first and second embodiments of the present invention. This is a cross-sectional view showing several stacked forms of the film.

   Specifically, the interfacial properties that have a dominant influence on the carrier flow before the formation of the highly transparent multi-en nitride nitride Shoki contact 20 and ohmic contact 40 electrode structures on the upper layer of the nitride nitride cladding layer 10 or 160. The nanometer scale particles (50) have been introduced to control the height and width of the phosphorus barrier. The material introduced into the nanometer-sized parka includes the height of the schottky barrier that controls the charge transport of carriers at the interface between the N-type semiconductor clad layer 10 or 160 and the electrode structures 20 or 40. Metal, alloy, solid solution, conductive oxide, transparent conductive oxide (TCO), transparent conductive nitride (TCN), Or by forming nanometer-sized particles composed of transparent conductive nitrogen oxides (TCONs), and then at least one layer of transparent conductive nitrogen oxides (TCONs) formed by combining oxygen (O 2) and nitrogen (N 2) simultaneously as described above. It is preferable to include the above and to form multiple in a single layer or two or more layers.

   5 is a cross-sectional view showing a group III nitride-based light emitting device, that is, a light emitting diode (LED), in which a high-transparent multi-en ohmic contact layer developed in accordance with embodiments 2, 3, and 4 of the present invention is applied to an upper portion of an en-type nitride cladding layer. to be.

   Specifically, an electrically conductive substrate, ie, silicon carbide (SiC), zinc oxide (ZnO), silicon (Si), gallium arsenide (GaAs), or electroplating / bonding known from many literatures, etc. FIG. 1 is a cross-sectional view illustrating a vertical structure light emitting diode structure formed on an upper layer of a conductive material layer such as metal (Cu, Ni, Al, etc.) formed by a transfer transfer method, or an alloy.

   Referring to the drawings, the light emitting device includes a conductive substrate 110, a bonding material layer 120, a highly reflective multiple-type ohmic contact v 130, a nitride-based cladding layer 140, a nitride-based active layer 150, and an N-type nitride. The system cladding layer 160 and the high transparency multiple N type ohmic contact layer 40 are laminated | stacked sequentially. Reference numeral 180 is a tunnel junction layer introduced to improve the characteristics of the ohmic contact layer, and 170 is an N-type electrode pad.

   Substrate 110 may be fabricated by an electroplating / bonding transfer method known in silicon (Si), silicon carbide (SiC), zinc oxide (ZnO), gallium arsenide (GaAs), or in many other forms. It is preferably formed of any one of materials such as metal (Cu, Ni, Al, etc.) or alloy (alloy) formed by.

  Each layer from the N-type nitride-based cladding layer 160 to the nitride-based active layer 150 and the nitride-based cladding layer 140 is any one selected from AlxInyGazN (x, y, z: integer), which is a general formula of a group III nitride compound. It is formed based on the compound, and the dopant is added to the N-type nitride cladding layer 160 and the nitride-based cladding layer 140.

   In addition, the nitride-based active layer 150 may be a variety of known methods such as monolayer, multi quantum well (MQW), multi quantum dot / wire, or a layer in which quantum dots / lines and wells are mixed. It may be configured as. As an example, the N-type nitride cladding layer 160 is formed by adding Si, Ge, Se, Te, etc., as an n-type dopant to GaN, and the active layer is formed of InGaN / GaN MQW or AlGaN / GaN MQW, and the nitride-based cladding layer 140 is formed by adding Mg, Zn, Ca, Sr, Ba, or the like to GaN as a doped dopant.

   As described above, the highly transparent multi-en ohmic contact layer 40, which is the core technology of the present invention, has a high transparency including at least one or more transparent conducting oxynitride (TCON) on the upper layer of the en-type nitride cladding layer 160. The N-type ohmic contact layer 40 is provided, and the transparent conductive nitrogen oxide (TCON) is formed of indium (In), tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga), and aluminum (Al). , Magnesium (Mg), titanium (Ti), molybdenum (Mo), tantalum (Ta), vanadium (V), chromium (Cr), niobium (Nb), zirconium (Zr), silver (Ag), nickel (Ni ), Copper (Cu), cobalt (Co), gold (Au), platinum (Pt), rhenium (Re), iridium (Ir), tungsten (W), ruthenium (Ru), or palladium (Pd) metals It refers to a material formed by combining at least one component as a main component and oxygen (O) and nitrogen (N) necessarily. Preferably, the transparent conductive nitrogen oxide (TCON) may further include other metal components as dopants in order to control electrical properties. Herein, the metals applied as dopants are applied with elements classified as metals on the periodic table of elements. In addition to the metal material to be applied as a dopant, it is preferable to include fluorine (F) and sulfur (S). In addition, the addition ratio of the dopant to the transparent conductive nitrogen oxide (TCON) is preferably applied to 0.001 to 20 weight percent (wt.%).

   According to another aspect of the present invention, in addition to the transparent conductive nitrogen oxide (TCON), the highly transparent multiple N type ohmic contact layer 40 is advantageous to form a schottky contact electrode on the upper part of the N type nitride based cladding layer 160 as follows. Regardless of the stacking order, together with metals and alloys / solid solutions based on these metals, common conducting oxides, transparent conducting oxides (TCO), and transparent conducting nitrides (TCN), etc. Can be formed by grafting. Metals and alloys / solid solutions based on these metals: aluminum (Al), magnesium (Mg), titanium (Ti), molybdenum (Mo), tantalum (Ta), vanadium (V) ), Chromium (Cr), niobium (Nb), zirconium (Zr), rhenium (Re), gold (Au), rhodium (Rh), ruthenium (Ru), tungsten (W), iridium (Ir), silver ( Ag), zinc (Zn), copper (Cu), cobalt (Co), tin (Sn), rare earth metals, or alloys / solids based on these metals.

   General conducting oxide: Nickel oxide (Ni-O), rhodium oxide (Rh-O), ruthenium oxide (Ru-O), iridium oxide (Ir-O), copper oxide (Cu-O), cobalt Oxide (Co-O), tungsten oxide (WO), chromium oxide (Cr-O), vananium oxide (VO), or titanium oxide (Ti-O).

   Transparent conductive oxide (TCO): indium oxide (In2O3), tin oxide (SnO2), indium tin oxide (ITO), zinc oxide (ZnO), magnesium (MgO), cadmium oxide (CdO), magnesium zinc oxide (MgZnO) , Indium zinc oxide (InZnO), indium tin oxide (InSnO), copper aluminum oxide (CuAlO2), silver oxide (Ag2O), gallium oxide (Ga2O3), zinc tin oxide (ZnSnO), zinc indium tin oxide (ZITO), or Still other oxides to which these transparent conductive oxides are combined.

   Transparent conductive nitride (TCN): titanium nitride (TiN), chromium nitride (CrN), tungsten (WN), tantalum (TaN), niobium (NbN).

   More preferably, a third material, ie, a dopant, may be added to the above-described oxides and nitrides in order to improve the electrical properties of these materials.

    In addition, the highly transparent multiple N-type ohmic contact layer 40 is preferably formed to a thickness of 1 nanometer to 1000 nanometers.

    In addition, the deposition temperature applied to form the high transparent multi-en ohmic contact layer 40 is in the range of 20 degrees to 1500 degrees, the pressure in the evaporator is performed at atmospheric pressure to about 10-12 torr (torr).

    In addition, after the highly transparent multiple N type ohmic contact layer 40 is formed, it is preferable to undergo an annealing process. Annealing is performed at a temperature in the reactor at 100 to 800 degrees for 10 seconds to 3 hours in a vacuum or gas atmosphere. At least one gas of nitrogen, argon, helium, oxygen, hydrogen, or air may be applied to the gas introduced into the reactor during the heat treatment.

   The N-type electrode pad 170 includes nickel (Ni) / gold (Au), silver (Ag) / gold (Au), titanium (Ti) / gold (Au), nickel (Ni) / gold (Au), and palladium (Pd). A layer structure in which) / gold (Au), or chromium (Cr) / gold (Au) is sequentially stacked may be applied.

   The method of forming each layer is physical such as electron beam or thermal evaporator, pulsed laser deposition using laser energy source, dual-type thermal evaporator sputtering, etc. It is formed by chemical vapor deposition (CVD) using chemical reactions such as physical vapor deposition (PVD), electroplating, and metal-organic chemical vapor deposition.

As described so far, according to the present invention, the development of a high-transparent multi-encheque Schottky contact and ohmic contact electrode structure for group III-nitride-based light-receiving and light-emitting device and a method for manufacturing light-receiving and light-emitting device using the same are relatively In addition, by applying transparent conductive nitrogen oxide (TCON), which is much superior to the transparent conductive oxide (TCO) and transparent conductive nitride (TCN), the optical properties of which are used as the conventional transparent conductive thin film electrodes, the shock resistance with the N-type nitride cladding layer is achieved. In addition, the ohmic contact interface may be improved to show excellent current-voltage characteristics, and high efficiency light reception and light emitting diodes may be manufactured due to the high light transmittance of the transparent electrode.

Claims (9)

High transparency multiple on top of an N- type nitride-based cladding layer to form a highly transparent multi N- type Schottky contact layer, which is absolutely necessary for use as a light receiving element In the step of forming the N-type Shoki contact electrode structure,    A high transparent multiple N-type schottky contact layer containing at least one transparent conducting oxynitride (TCON) in the upper portion of the N-type nitride cladding layer, but preferentially a transparent conductive nitrogen oxide directly in the upper portion of the N-type nitride cladding layer (TCON) laminated,    The transparent conductive nitrogen oxide (TCON) is indium (In), tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga), aluminum (Al), magnesium (Mg), titanium (Ti), molybdenum Ni (Mo), Tantalum (Ta), Vanadium (V), Chromium (Cr), Niobium (Nb), Zirconium (Zr), Silver (Ag), Nickel (Ni), Copper (Cu), Cobalt (Co) At least one of gold (Au), platinum (Pt), rhenium (Re), iridium (Ir), tungsten (W), ruthenium (Ru), or palladium (Pd) metals O) and nitrogen (N) refers to a material formed by binding at the same time.    Preferably, the transparent conductive nitrogen oxide (TCON) may further include other metal components as dopants in order to control electrical properties. Herein, the metals applied as dopants are applied with elements classified as metals on the periodic table of elements. In addition to the metal material to be applied as a dopant, it is preferable to include fluorine (F) and sulfur (S). In addition, the addition ratio of the dopant to the transparent conductive nitrogen oxide (TCON) is preferably applied to 0.001 to 20 weight percent (wt.%).    The method of claim 2,    In addition to the transparent conductive nitrogen oxide (TCON), the highly transparent multi-en-type Schottky contact electrode structure is a metal which is advantageous for forming a schottky contact interface on the upper layer of the en-type nitride-based cladding layer and an alloy / solid solution based on these metals. Alloy / solid solution, general conductive oxide (conducting oxide), transparent conductive oxide (TCO), transparent conductive nitride (TCN) and the like can be formed by grafting irrespective of the stacking order.    Metals and alloys / solid solutions based on these metals: platinum (Pt), palladium (Pd), nickel (Ni), gold (Au), rhodium (Rh), ruthenium (Ru) ), Iridium (Ir), silver (Ag), zinc (Zn), magnesium (Mg), beryllium (Be), copper (Cu), cobalt (Co), tin (Sn), rare earth metals Or an alloy / solid solution based on these metals.    General conducting oxide: Nickel oxide (Ni-O), rhodium oxide (Rh-O), ruthenium oxide (Ru-O), iridium oxide (Ir-O), copper oxide (Cu-O), cobalt Oxide (Co-O), tungsten oxide (WO), or titanium oxide (Ti-O).    Transparent conductive oxide (TCO): indium oxide (In2O3), tin oxide (SnO2), indium tin oxide (ITO), zinc oxide (ZnO), magnesium (MgO), cadmium oxide (CdO), magnesium zinc oxide (MgZnO) , Indium zinc oxide (InZnO), indium tin oxide (InSnO), copper aluminum oxide (CuAlO2), silver oxide (Ag2O), gallium oxide (Ga2O3), zinc tin oxide (ZnSnO), zinc indium tin oxide (ZITO), or Still other oxides to which these transparent conductive oxides are combined.    Transparent conductive nitride (TCN): titanium nitride (TiN), chromium nitride (CrN), tungsten (WN), tantalum (TaN), or niobium (NbN). Group III-nitride vertical structure light emission having an active layer between a P- type nitride cladding layer and an N- type nitride cladding layer formed on an upper portion of the conductive substrate. In the diode (LED), A highly transparent multi N- type ohmic contact layer formed of a laminated structure having at least one layer of transparent conducting oxynitride (TCON) at an upper portion of the N-type nitride cladding layer is provided. Transparent conductive nitrogen oxide (TCON) was deposited on the upper layer of the N-type nitride cladding layer,    The transparent conductive nitrogen oxide (TCON) is indium (In), tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga), aluminum (Al), magnesium (Mg), titanium (Ti), molybdenum Nium (Mo), tantalum (Ta), vanadium (V), chromium (Cr), niobium (Nb), zirconium (Zr), silver (Ag), nickel (Ni), copper (Cu), cobalt (Co), At least one of gold (Au), platinum (Pt), rhenium (Re), iridium (Ir), tungsten (W), ruthenium (Ru), or palladium (Pd) metals as a main component and oxygen (O) ) And nitrogen (N) refers to a material formed by bonding at the same time.    Preferably, the transparent conductive nitrogen oxide (TCON) may further include other metal components as dopants in order to control electrical properties. Herein, the metals applied as dopants are applied with elements classified as metals on the periodic table of elements. In addition to the metal material to be applied as a dopant, it is preferable to include fluorine (F) and sulfur (S). In addition, the addition ratio of the dopant to the transparent conductive nitrogen oxide (TCON) is preferably applied to 0.001 to 20 weight percent (wt.%).    The method of claim 3, wherein    In addition to the transparent conductive nitrogen oxide (TCON), the highly transparent multiple N-type ohmic contact layer is advantageous for forming an ohmic contact interface on the upper layer of the N-type nitride-based clad layer and an alloy / solid solution based on these metals. A nitride-based light emitting device comprising a common conductive oxide (conducting oxide), a transparent conductive oxide (TCO), a transparent conductive nitride (TCN) and the like formed by grafting irrespective of the stacking order.    The method according to claim 3, 4,    In addition to the transparent conductive nitrogen oxide (TCON), metals grafted to form an N-type multi-ohmic contact layer and alloys / solid solutions based on these metals, general conductive oxides, transparent conductive oxides, and transparent conductive nitrides are as follows.     Metals and alloys / solid solutions based on these metals: aluminum (Al), magnesium (Mg), titanium (Ti), molybdenum (Mo), tantalum (Ta), vanadium (V) ), Chromium (Cr), niobium (Nb), zirconium (Zr), rhenium (Re), gold (Au), rhodium (Rh), ruthenium (Ru), tungsten (W), iridium (Ir), silver ( Ag), zinc (Zn), copper (Cu), cobalt (Co), tin (Sn), rare earth metals, or alloys / solids based on these metals.    General conducting oxide: Nickel oxide (Ni-O), rhodium oxide (Rh-O), ruthenium oxide (Ru-O), iridium oxide (Ir-O), copper oxide (Cu-O), cobalt Oxide (Co-O), tungsten oxide (WO), chromium oxide (Cr-O), vananium oxide (VO), or titanium oxide (Ti-O).    Transparent conductive oxide (TCO): indium oxide (In2O3), tin oxide (SnO2), indium tin oxide (ITO), zinc oxide (ZnO), magnesium (MgO), cadmium oxide (CdO), magnesium zinc oxide (MgZnO) , Indium zinc oxide (InZnO), indium tin oxide (InSnO), copper aluminum oxide (CuAlO2), silver oxide (Ag2O), gallium oxide (Ga2O3), zinc tin oxide (ZnSnO), zinc indium tin oxide (ZITO), or Still other oxides to which these transparent conductive oxides are combined.    Transparent conductive nitride (TCN): titanium nitride (TiN), chromium nitride (CrN), tungsten (WN), tantalum (TaN), niobium (NbN).     The method according to claim 3, 4, A highly transparent multi N- type ohmic contact layer formed of a laminated structure having at least one transparent conducting oxynitride (TCON) is an N- type nitride cladding layer. The metal, alloy, solid solution, common conducting oxide, transparent conducting oxide (TCO), transparent conducting nitride (TCN), or transparent conducting nitrogen oxides described above prior to formation in the upper layer. A nitride-based light emitting device, characterized in that the introduction of nanometer scale particles (nanometer scale particles) formed of (TCON).    In the method of manufacturing a nitride-based light emitting device having an active layer between the nitride-based cladding layer and the en-type nitride-based cladding layer, end. In a light emitting structure in which a nitride-based cladding layer, an active layer, and an en-nitride-based cladding layer are sequentially stacked on an upper portion of the conductive substrate, a highly transparent multi-en ohmic contact including at least one or more transparent conductive nitrogen oxides on the upper layer of the en-nitride-based cladding layer. Forming an electrode structure (highly transparent multi N- type ohmic contact layer);    I. And heat-treating the electrode structure having undergone the temporary step.    The transparent conductive nitrogen oxides stacked in the step are indium (In), tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga), aluminum (Al), magnesium (Mg), titanium (Ti) , Molybdenum (Mo), tantalum (Ta), vanadium (V), chromium (Cr), niobium (Nb), zirconium (Zr), silver (Ag), nickel (Ni), copper (Cu), cobalt (Co ), Gold (Au), platinum (Pt), rhenium (Re), iridium (Ir), tungsten (W), ruthenium (Ru), or palladium (Pd) metals based on at least one or more A method of manufacturing a nitride-based light emitting device having a material layer formed by combining (O) and nitrogen (N) at the same time.    The method of claim 7, wherein Metals and alloys advantageous for forming an N- type ohmic contact layer to improve electrical characteristics of a highly transparent multi N -type ohmic contact electrode structure including the transparent conductive nitrogen oxide (TCON) The solid solution, the general conductive oxide, the transparent conductive oxide, or the transparent conductive nitride may be grafted irrespective of the stacking order, and a method of manufacturing a nitride-based light emitting device further comprising a third dopant.    The transparent conductive nitrogen oxide (TCON) -based transparent electrode developed in the present invention is all light-related devices that are made of inorganic and organic materials having other chemical compositions in addition to group III-nitride light-receiving and light emitting devices, that is, solar cells. And high quality transparent electrode structures of devices such as organic light emitting diodes (OLEDs).

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