KR20070035531A - Apparatus for generating a moire pattern and method of measuring a position of a substrate - Google Patents

Abstract

The present invention relates to a substrate table arranged to support a substrate provided with one or more substrate marks. One or more substrate marks have a position that can be measured using an alignment system. The substrate table is provided with an optical system having a magnification factor deviating from one to provide an image of one or more alignment marks to be measured by the alignment system.

Description

The method for measuring the position of the moiré pattern generating apparatus and the substrate

DESCRIPTION OF THE EMBODIMENTS Hereinafter, embodiments of the present invention will be described only by way of example with reference to the accompanying schematic drawings in which corresponding reference numbers indicate corresponding parts.

1 illustrates a lithographic apparatus according to an embodiment of the present invention;

2 is a schematic cross-sectional view illustrating a substrate table incorporating two branches of an optical system for double side alignment;

3 is a plan view of a substrate showing the position and orientation of double side alignment optics;

4 is a plan view showing an alternative position and orientation of the duplex alignment optics;

5 is a cross-sectional view of a portion of a substrate table having integral optical components;

6 is a cross-sectional view of a portion of a substrate table having integrated optical components in accordance with the present invention;

7 is a plan view of a portion of a substrate table having integrated optical components in accordance with another embodiment of the present invention;

8 illustrates a mark that can be used in one embodiment according to the present invention;

9 is a sectional view of an alternative embodiment of the present invention;

10 is a schematic diagram illustrating the principle of operation of an alternative embodiment of the present invention;

11 is a plan view of a portion of the device shown in FIG. 9; And

12 is a side view of an embodiment of an alternative embodiment of the present invention.

The present invention relates to a substrate table arranged to support a substrate provided with at least one substrate mark having a position that can be measured using an alignment system. The invention also relates to a method of measuring the position of a substrate on a substrate table.

BACKGROUND A lithographic apparatus is a machine that applies a desired pattern onto a substrate, typically onto a target portion of the substrate. Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that situation, a patterning device, alternatively referred to as a mask or a reticle, can be used to generate a circuit pattern to be formed on a separate layer of the IC. This pattern can be transferred onto a target portion (eg, comprising part of one or several dies) on a substrate (eg, a silicon wafer). Transfer of the pattern is typically performed through imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus scans a pattern in a given direction ("scanning" -direction) through a so-called stepper, and a radiation beam, while the target portion is irradiated by exposing the entire pattern on the target portion at one time, while paralleling this direction. It includes a so-called scanner in which each target portion is irradiated by synchronously scanning the substrate in one direction (direction parallel to the same direction) or anti-parallel direction (direction parallel to the opposite direction). It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.

While reference is made herein to specific uses of lithographic apparatus in the manufacture of ICs, the lithographic apparatus described herein includes integrated optical systems, induction and detection patterns for magnetic domain memories, flat-panel displays, It should be understood that the present invention may have other applications, such as the manufacture of liquid crystal displays (LCDs), thin film magnetic heads. As those skilled in the art relate to these alternative applications, the use of any term such as "wafer" or "die" herein may be considered synonymous with more general terms such as "substrate" or "target portion", respectively. I can understand that. The substrate referred to herein may be processed before or after exposure, for example in a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), or a metrology tool and / or inspection tool. . Where applicable, the disclosure herein may be applied to such substrate processing tools and other substrate processing tools. Further, as the substrate may be processed more than once, for example to produce a multilayer IC, the term substrate as used herein may also refer to a substrate that already contains multiple processed layers.

While specific reference has been made to specific uses of embodiments of the present invention in connection with optical lithography, it will be appreciated that the present invention may be used in other applications, such as imprint lithography, and is not limited to optical lithography, if the specification permits. Could be. In imprint lithography, topography in a patterning device defines a pattern created on a substrate. The topography of the patterning device can be pressed into a layer of resist supplied to the substrate, and the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof. After the resist is cured, the patterning device is moved out of the resist leaving a pattern therein.

As used herein, the terms "radiation" and "beam" refer to ultraviolet (UV) radiation (eg, wavelengths of 436, 365, 355, 248, 193, 157, or 126 nm) and (wavelengths of 5 to 20 nm). Encompasses all types of electromagnetic radiation, including extreme ultraviolet (EUV) radiation, as well as particle beams such as ion beams and electron beams.

The term "lens", where the context allows, may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.

Alignment is the process of positioning an image of a specific point on a mask to a specific point on a substrate to be exposed. Typically, one or more alignment marks, such as a small pattern, are provided on each of the substrate and the mask. The device may include many layers formed by successive exposures with intermediate processing steps. Prior to each exposure, alignment is performed to minimize any positional errors (also called overlay errors) between the new exposure and the previous ones.

However, some of the intermediate processing steps, such as chemical mechanical polishing (CMP), rapid thermal annealing, thick layer deposition and deep trench etching, may damage or distort alignment marks on the substrate. distort or bury the marks under opaque layers. Thus, sometimes the alignment marks may not be clearly visible or at all, which may negatively affect the accuracy of the alignment. This may cause overlay errors.

In some technologies, such as micro systems technology (MST) and micro eletro-mechanical systems (MEMS), devices are fabricated using both sides of a substrate. This technique faces problems in performing exposures on the other side of the substrate such that they are correctly aligned with previously exposed features on one side of the substrate. Typically, alignment accuracy of 0.5 micron order or higher is required.

Now, techniques are being developed that allow the imaging of patterning features with even smaller patterns using so-called immersion techniques. This technique is based on the fact that the space between the lens and the substrate is filled with a fluid such as water. Since the refractive index of water is higher than that of air of any low pressure gas, the numerical aperture of the system is increased. This allows the system to image even smaller patterns while using the same radiation system and projection system. More information about the immersion technique can be found in EP 1 420 298 A2, EP 1 429 188 and EP 1 420 300 A2. However, the presence of water can affect alignment measurements. The presence of water in the space between the lens and the substrate makes it difficult to perform alignment measurements of the marks provided on the substrate. Moreover, it is also somewhat difficult to compare these 'wet' measurements with previously obtained 'dry' alignment measurements.

Conventional alignment techniques are performed both on the top surface of the substrate, ie on the surface of the substrate on which the exposure is performed. This side will also be referred to as the first side or front side of the substrate. These alignment techniques all measure the position of the substrate by measuring the position of the alignment marks provided on the top surface of the substrate. However, in combination with immersion techniques and also substrates fabricated from both sides, these conventional alignment techniques are difficult to perform and are less accurate.

Conventional alignment techniques typically use optical measurement techniques that measure the position of alignment marks provided on the top surface of the substrate, i. This is difficult to use such alignment techniques in combination with devices fabricated from both sides, and in that case, the substrate needs to be positioned so that the alignment marks face the substrate table.

When immersion techniques are used, the optics of the alignment system are typically located outside the area filled with liquid, so the optics and / or optical signals need to be guided into the liquid. This is not a simple task and also requires complex and expensive techniques.

To overcome these problems, alignment techniques have been developed arranged to measure the position of the alignment marks provided on the back side of the substrate, i. This side will also be referred to as the second side of the substrate.

In alignment, the second side of the substrate faces the substrate table that supports the substrate. Optical devices are provided in the substrate table to allow measurement of the position of the alignment marks provided on the second side of the substrate. This technique is generally referred to as back alignment and will also be described in more detail below. A more detailed description can be found in US 2002/0109825 A1, owned by ASML.

As such, the alignment measurements using optical devices provided to the substrate table through the second side of the substrate may have been perceived to be less accurate than alignment measurements based on alignment markers provided on the first side of the substrate that can be measured directly. will be. Therefore, improvements in backside alignment techniques are needed.

In general, there is a need for improvements in alignment techniques, back and front, to allow more accurate measurement of the position of the substrate positioned on the substrate table and to obtain better alignment results.

Throughout this specification, references to alignment marks located on a particular substrate surface include alignment marks etched onto the respective substrate surface, and the alignment marks need to be embedded and no longer exposed to the substrate. So as to have subsequent material deposited on top of the alignment mark.

While reference is made to specific uses of such devices in the manufacture of ICs or MEMs, it should be clearly understood that such devices have many other possible applications. For example, the apparatus can be employed in the manufacture of integrated optical systems, induction and detection patterns for magnetic domain memories, liquid crystal displays, thin film magnetic heads.

It is an object of the present invention to provide a substrate table that allows for more accurate measurement of the substrate position located on the substrate table.

According to a first embodiment of the present invention, there is provided a device for generating at least one virtual substrate mark, the device comprising a substrate table arranged to support a substrate having at least one substrate mark. Wherein the optical system comprises an optical system associated with the substrate table, the optical system having one or more optical arms, the two or more mirrors arranged to reflect radiation, and from the mirrors. At least two lenses positioned to receive the reflected radiation, the lenses providing a deviating magnification factor, wherein the at least one optical arms are adapted from the corresponding at least one substrate mark. Create one or more virtual substrate marks.

According to a second embodiment of the invention, there is provided a method of measuring the position of a substrate provided on a substrate table, the substrate having a plurality of substrate marks thereon and at least two of the substrate marks being of different sizes. Wherein the method comprises generating a first virtual substrate mark corresponding to a substrate mark having a first size, wherein the first virtual substrate mark is generated using a first magnification factor, and a second Generating a second virtual substrate mark corresponding to the substrate mark having a size, wherein the second virtual substrate mark is generated using a second magnification factor, and generates a second virtual substrate mark for the first virtual substrate mark. 1 determining the alignment position.

패턴을 생성하는 장치가 제공되며, 1이상의 기판 정렬 격자(substrate alignment grating)를 갖는 기판을 지지하도록 배치된 기판 테이블, 및 정렬 격자가 제공된 윈도우를 포함하여 이루어지며, 윈도우 정렬 격자는, 상기 기판이 상기 기판 테이블에 의해 지지되는 경우, 상기 기판의 위치를 결정하기 위해서, 상기 기판 정렬 격자 및 상기 윈도우 정렬 격자가 함께 정렬 시스템에 의해 사용될 수 있는

패턴을 형성하도록 구성된다. According to the third embodiment of the present invention,

An apparatus for generating a pattern is provided, the apparatus comprising a substrate table arranged to support a substrate having at least one substrate alignment grating, and a window provided with an alignment grating, wherein the window alignment grating comprises: When supported by the substrate table, the substrate alignment grating and the window alignment grating may be used together by an alignment system to determine the position of the substrate.

Configured to form a pattern.

패턴을 형성하도록 일 위치에 기판을 제공하는 단계, 상기 기판 테이블내에 위치된 광학기를 이용하여 상기

패턴의 이미지를 형성하는 단계, 그 후, 정렬 시스템을 이용하여

패턴의 상기 이미지의 위치를 측정하는 단계를 포함하여 이루어진다.According to a fourth embodiment of the present invention, there is provided a method of measuring the position of a substrate provided on a substrate table, wherein the method comprises an alignment grating provided on the substrate and an alignment grating provided on a window in the substrate table.

Providing a substrate at a location to form a pattern, using optics located within the substrate table;

Forming an image of the pattern, and then using the alignment system

And measuring the position of the image of the pattern.

패턴을 형성하도록 일 위치 에 기판을 제공하는 단계, 그 후, 상기 정렬 시스템을 이용하여

패턴의 상기 이미지의 위치를 측정하는 단계를 포함하여 이루어진다.According to a fifth embodiment of the present invention, there is provided a method for measuring the position of a substrate provided on a substrate table, wherein the method comprises an alignment grating provided on the substrate and an alignment grating provided on a window in an alignment system.

Providing a substrate in one location to form a pattern, and then using the alignment system

And measuring the position of the image of the pattern.

1 schematically depicts a lithographic apparatus according to an embodiment of the invention. The device is:

A providing illumination system (illuminator) IL configured to condition the radiation beam B (eg UV radiation or EUV radiation);

A support structure (eg a mask) configured to support the patterning device (eg a mask) MA and connected to a first positioner PM configured to accurately position the patterning device according to certain parameters. Table) (MT);

A substrate table (e.g., connected to a second positioner PW, configured to hold a substrate (e.g. a resist-coated wafer) W, and configured to accurately position the substrate according to certain parameters. Wafer table) (WT); And

Projection system (e.g., refractive projection lens system) configured to project a pattern imparted to the radiation beam B by the patterning device MA onto the target portion C (including one or more dies) of the substrate W (PS).

The illumination system may include various types of components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or a combination thereof, for the purpose of directing, shaping or controlling radiation. .

The support structure supports, i.e. bears the weight of, the patterning device. This holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is maintained in a vacuum environment. The support structure can use mechanical, vacuum, electrostatic, or other clamping techniques to hold the patterning device. The support structure can be a frame or table that can be fixed or movable as required. The support structure can ensure that the patterning device is in a desired position, for example with respect to the projection system. The use of any term "reticle" or "mask" herein may be considered synonymous with the more general term "patterning device".

As used herein, the term "patterning device" should be broadly interpreted as meaning any device that can be used to impart a predetermined pattern to a cross section of a radiation beam in order to create a pattern in a target portion of a substrate. The pattern imparted to the radiation beam exactly matches the desired pattern in the target portion of the substrate, for example when the pattern comprises phase-shifting features or so-called assist features. Note that you may not. In general, the pattern imparted to the radiation beam will correspond to a particular functional layer in the device to be created in the target portion, such as an integrated circuit.

The patterning device can be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in the lithography art and include binary, alternating phase-shift and attenuated phase-shift masks and various hybrid mask types. One example of a programmable mirror array employs a matrix configuration of small mirrors, each of which can be individually tilted to reflect the incident radiation beam in a different direction. Inclined mirrors impart a pattern to the beam of radiation reflected by the mirror matrix.

As used herein, the term "projection system" refers to refractive, reflective, catadioptric, as appropriate, for example, for exposure radiation used, or for other factors such as the use of immersion fluid or the use of vacuum. It is to be broadly interpreted as encompassing any type of projection system, including magnetic, electromagnetic and electrostatic optical systems. Any use of the term "projection lens" herein may be considered as synonymous with the more general term "projection system".

In an exemplary embodiment of the invention, the device is of a transmissive type (e.g. employing a transmissive mask). Alternatively, the apparatus may be of a transmissive type (eg employing a programmable mirror array or employing a reflective mask).

The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and / or two or more mask tables). In such "multiple stage" machines additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.

The lithographic apparatus may also be constructed in such a way that all or part of the substrate may be covered by a liquid (eg water) having a relatively high refractive index to fill the space between the projection system and the substrate. Immersion liquid may also be applied to other spaces in the lithographic apparatus, for example between the mask and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems. As used herein, the term "immersion" does not mean that a structure, such as a substrate, must be submerged in liquid, but rather means that liquid is located between the projection system and the substrate during exposure.

Referring to FIG. 1, the illuminator IL receives a radiation beam from a radiation source SO. For example, when the source is an excimer laser, the source and the lithographic apparatus may be separate entities. In this case, the source is not considered to form part of the lithographic apparatus, and the radiation beam is, for example, with the aid of a beam delivery system BD comprising a suitable directing mirror and / or beam expander. ) Is passed through to the illuminator IL. In other cases, for example if the source is a mercury lamp, the source may be an integral part of a lithographic apparatus. The source SO and the illuminator IL may be referred to as a radiation system together with the beam delivery system BD as necessary.

The illuminator IL may comprise an adjuster AD for adjusting the angular intensity distribution of the radiation beam. In general, at least the outer and / or inner radial extent (commonly referred to as -outer and -inner, respectively) of the intensity distribution in the pupil plane of the illuminator can be adjusted. In addition, the illuminator IL may include various other components such as the integrator IN and the condenser CO. The illuminator can be used to condition the beam of radiation to have the desired uniformity and intensity distribution in its cross section.

The radiation beam B is incident on a patterning device (e.g., mask MA) held on a support structure (e.g., mask table MT), and is patterned by the patterning device. When the mask MA is crossed, the radiation beam B passes through the projection system PS and focuses the beam on the target portion C of the substrate W. With the aid of the second positioner PW and the position sensor IF (e.g., interferometer device, linear encoder or capacitive sensor), the substrate table WT is different in the path of the radiation beam B, for example. It can be accurately moved to position the target portions (C). Similarly, the first positioner PM and another position sensor (not clearly shown in FIG. 1) are provided with a radiation beam B, for example after mechanical retrieval from the mask library or during scanning. It can be used to accurately position the mask MA with respect to the path of. In general, the movement of the mask table MT will be realized with the help of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning). This forms part of the first positioner PM. Similarly, the mobility of the substrate table WT, long-stroke module and short-stroke module, can be realized, which forms part of the second positioner PW. In the case of a stepper (as opposed to a scanner), the mask table MT may be connected or fixed only to a single-stroke actuator. The mask MA and the substrate W may be aligned using the mask alignment marks M1 and M2 and the substrate alignment marks P1 and P2. Although the illustrated substrate alignment marks occupy dedicated target portions, they may be located in spaces between the target portions (these are known as scribe-lane alignment marks). . Similarly, in situations where more than one die is provided on the mask MA, mask alignment marks may be located between the dies.

The described device can be used in one or more of the following modes:

1. In the step mode, the mask table MT and the substrate table WT are basically kept stationary, while the entire pattern imparted to the radiation beam is projected onto the target portion C at once (ie, a single static Single static exposure). Then, the substrate table WT is shifted in the X and / or Y direction so that another target portion C can be exposed. In the step mode, the maximum size of the exposure field limits the size of the target portion C imaged during a single static exposure.

2. In the scan mode, the mask table MT and the substrate table WT are synchronously scanned (ie, single dynamic exposure while the pattern imparted to the radiation beam is projected onto the target portion C). exposure)). The velocity and direction of the substrate table WT relative to the mask table MT is determined by the image reversal characteristics of the (zoom in) and projection system PS. In the scan mode, the maximum size of the exposure field limits the width (in the unscanned direction) of the target portion during a single dynamic exposure, while the length of the scanning operation determines the height (in the scanning direction) of the target portion.

3. In another mode, the mask table MT remains essentially stationary by holding a programmable patterning device and while the pattern imparted to the radiation beam is projected onto the target portion C, the substrate table ( WT) is moved or scanned. In this mode, a pulsed radiation source is typically employed, and the programmable patterning device is updated as needed between the radiation pulses that continue after each movement of the substrate table WT or during scanning. do. This mode of operation can be readily applied to maskless lithography using a programmable patterning device, such as a programmable mirror array of the kind mentioned above.

It is also possible to employ combinations and / or variations of the modes described above, or completely different different modes of use.

2 shows a substrate W on a substrate table WT. Substrate marks WM3 and WM4 are provided on the first side (“front”) of the substrate W, and light is reflected from these marks as indicated by the arrows above the reference numerals WM3 and WM4. And in alignment with the marks on the mask in conjunction with an alignment system (not shown). A more detailed description thereof is disclosed in US patent application Ser. No. 10 / 736,911, filed December 17, 2003, which is incorporated herein by reference in its entirety.

In addition, the substrate marks WM1 and WM2 are also provided on the second side (“back side”) of the substrate W. In order to provide optical access to the substrate marks WM1 and WM2 on the backside of the substrate W, an optical system is embedded in the substrate table WT. The optical system includes a pair of arms 10a, 10b. Each arm consists of two mirrors 12, 14 and two lenses 16, 18. The mirrors 12, 14 in each arm are inclined such that the sum of the angles that cause them to be horizontal is 90 °. In this way, the beam of light incident vertically on one of the mirrors will remain vertical when reflected by the other mirror. Of course, other ways of obtaining a 180 ° change in direction can be considered. For example, lenses and mountings can be designed so that most of the direction change can be taken into account as long as the sum of the optical systems provides a 180 ° direction change.

In use, light is directed from the substrate table WT onto the mirror 12, through the lenses 16 and 18 to the mirror 14, and then onto the respective substrate marks WM1, WM2. do. Light is reflected to portions of the substrate mark and returned along the arm of the optical system through mirrors 14, lenses 18 and 16, and mirrors 12. The mirrors 12, 14 and the lenses 16, 18 are provided with any substrate marks WM3, WM4 provided with an image 20a, 20b of the substrate marks WM1, WM2 on the front side of the substrate W. Corresponding to the vertical position of), it is arranged to be formed in the plane of the front surface (top surface) of the substrate W. The order of the lenses 16, 18 and the mirrors 12, 14 may vary according to the optical system. For example, the lens 18 may be between the mirror 14 and the substrate W (see description of later embodiments).

The images 20a and 20b of the substrate marks WM1 and WM2 serve as virtual substrate marks and pre-existing the existing alignment system in exactly the same manner as the actual substrate marks provided on the front side (top surface) of the substrate W. alignment system) (not shown).

As shown in FIG. 2, the arms 10a, 10b of the optical system produce images 20a, 20b displaced with respect to the substrate W plane, so that they can be moved by the alignment system. Can be viewed on the screen. Two preferred orientations of the arms 10a, 10b of the optical system are shown in FIGS. 3 and 4, which are top views of the substrate W in the XY plane. For simplicity, the substrate table WT is omitted in FIGS. 3 and 4. In FIG. 3, the arms 10a, 10b of the optical system are aligned along the X axis. In FIG. 4, the arms 10a, 10b of the optical system are parallel to the Y axis. In both cases, the substrate marks WM1, WM2 lie on the X axis. Since the substrate marks WM1, WM2 are located on the bottom surface of the substrate, they are turned over from the point of view of the top surface of the substrate W. As shown in FIG. However, the placement of the mirrors 12, 14 of the arms of the optical system can be configured such that the images 20a, 20b of the substrate marks WM1, WM2 are restored to the proper orientation. Thus, the images appear exactly the same as if they were present on the top surface of the substrate W. Further, the optical system is arranged such that the ratio of the size of the substrate marks WM1, WM2 to the images 20a, 20b is 1: 1 (i.e., no enlargement or reduction exists). As a result, the images 20a and 20b can be used exactly as if they were actual substrate marks on the front of the substrate W. As shown in FIG. In order to perform alignment using both real and virtual substrate marks, a common alignment pattern or key provided on the mask can be used.

In this example, as shown in FIG. 2, substrate marks are provided on both the front and rear surfaces of the substrate W at corresponding positions. 3 and 4, for the sake of simplicity, the substrate marks are shown only on the back side of the substrate W. FIG. According to the above configuration, when the substrate W is flipped over by rotation about either the X or Y axis, the substrate mark existing on the top surface of the substrate W is now the substrate. On the underside of (W), however, the substrate mark can be present at a position that can be imaged by the arms 10a, 10b of the optical system.

Due to the mirror arrangement, the displacement of the substrate W in one direction parallel to the arms 10a, 10b of the optical system results in a corresponding image 20a, 20b of the substrate marks WM1, WM2 on the underside of the substrate. Note that we will displace the in the opposite direction. For example, in FIG. 3, if the substrate W was displaced to the right, the images 20a and 20b would be displaced to the left. When determining the position of the substrate marks WM1 and WM2 and when adjusting the mask and substrate W relative positions when performing the alignment, software for controlling the alignment system can be considered. If the two arms of the optical system 10a, 10b are symmetrical, the separation between the images 20a, 20b will remain substantially constant when the substrate is displaced.

In an alternative embodiment of the invention, the substrate table WT is provided with a mirror arrangement that does not change the direction of movement of the images 20a, 20b with respect to the movement of the substrate marks WM1, WM2.

Two or more substrate marks may be provided on the substrate W surface. The single mark may provide information regarding the relative positioning of the image of the particular point on the mask with respect to the particular point on the substrate. However, two or more marks may be used to ensure correct azimuth alignment and magnification.

5 shows a portion of the substrate table WT in cross section. According to one embodiment of the invention, optical systems 10a and 10b for imaging substrate marks on the back side of the substrate may be embedded in the substrate table WT in a particular manner. As shown in FIG. 5, the mirrors 12, 14 of the arm of the optical system may be provided integrally with the substrate table WT, rather than as discrete components. After the appropriate faces have been machined into the substrate table WT, mirrors 12 and 14 are formed as coatings may be provided on these faces to improve reflectivity. The optical system can be made of the same material as the substrate table, such as Zerodur ^™ , which has a very low coefficient of thermal expansion and thus high alignment accuracy can be maintained.

Substrate marks WM1, WM2, WM3, WM4 may be provided on the substrate W to allow alignment of the substrate W with respect to the projected patterning beam. Alignment is necessary to allow for optimal positioning of the different layers of the substrate W relative to each other. The substrate W may be formed from a plurality of layers each formed on the substrate W in sequence and subjected to exposure. Since different layers are configured to form a working device, different exposures should be optimally aligned with respect to each other.

As described above, integrated circuits are made in layers. Each layer may begin with exposure of a (different) pattern on the substrate W. This pattern may need to fit optimally on the previous pattern. The measure for the accuracy of this alignment achieved is the overlay (O).

The position of the substrate marks WM3, WM4 on the substrate W, if conventional alignment techniques are used, i.e., the substrate marks WM3, WM4 can be located on the first side of the substrate W Equation may be derived to explain the relationship between and the overlay (O).

Basically, the overlay O depends on how accurately the machine can expose the images and how precisely the substrate position can be measured. These are two independent error sources.

The accuracy of the machine in exposing the images is called the stage overlay (S). The stage overlay S is the overlay difference between the first layer and the second layer when the substrate W stays on the stage between two exposures. Therefore, the stage overlay S is a reference to the mechanical exposure positioning error.

The accuracy that can be obtained when measuring the position of the substrate W depends on the geometrical position of the substrate markers. Substrate alignment parameters include expansion, rotation, and translation. The overlay error due to substrate expansion and rotation is greatest at the edge of the substrate.

The following equation can be derived to represent the overlay O:

here:

σ is the standard deviation of the measured alignment position

D _w is the substrate diameter

D _PM is the distance between two alignment marks

S is 3σ (three times the standard deviation) for the stage overlay, and

O is 3σ (three times the standard deviation) for the overlay.

The value for σ is a reference to the error of the mark position measurement distribution. When the error distribution is regarded as a Gaussian distribution, as will be appreciated by those skilled in the art, the 3σ value represents an error value in which about 99.7% of all errors are smaller.

Of σ _FS value of (f ront s ide) _{is, σ BS (b ack s ide} ) for measuring a substrate mark positioned on the second side of the substrate (W) for measuring a substrate mark positioned on the surface 1 of the substrate It is different from the value. Several reasons as to why different values for sigma are found for the substrate mark provided on the second side of the substrate W can be identified, for example:

The alignment beam passes through more optical surfaces since more optical elements are used to measure substrate markers located on the second side of the substrate;

The optics used to measure the substrate marker on the second side of the substrate are more dependent on temperature.

According to the invention, in a substrate table WT similar to the optical system shown in FIG. 2, which provides optical access to the substrate marks WM5, WM6 on the backside of the substrate W and provides a magnification M. An optical system can be embedded. An example of such an optical system according to the invention is shown in FIG. 6. The same reference numerals are used for the same parts shown in the previous figures.

Given the fact that the image of the substrate marks can be derived in front, it will be understood that σ in Equation 1 now becomes σ _BS , which is the sum of σ _FS + term σ _BF ( b ack to f ront):

This leads to the equation for O:

The optical system includes a pair of arms 10a, 10b. In one embodiment, each arm may include two mirrors 12, 14 and two lenses 116, 118. Other configurations may be used. The mirrors 12, 14 in each arm are inclined such that the sum of the angles that cause them to be horizontal is 90 °. In this way, a beam of light incident vertically on one of the mirrors will remain horizontal when reflected by the other mirror. It will also be appreciated that this 180 ° change in direction can be obtained (partially) by other optical elements provided in the optical system, such as lenses 116, 118.

The lenses 116, 118 have a vertical position of any substrate marks WM3, WM4 with magnified images 120a, 120b of the substrate marks WM5, WM6 provided on the front side of the substrate W. FIG. Correspondingly, it can be designed to be formed in the plane of the front surface (top surface) of the substrate W. The order of the lenses 116, 118 and the mirrors 12, 14 may vary according to the optical system. For example, lens 118 may be between mirror 14 and substrate W. FIG.

Magnification factor M can be obtained by providing different focal lengths to lenses 116, 118. In this example, the magnification M is M = 3, but any other suitable magnification M may be used. Those skilled in the art will appreciate that the positioning of the mirrors with respect to the magnified images 120a, 120b and the substrate marks WM5, WM6 may be different for the embodiment shown in FIG. 2, ie, the substrate marks WM5, It will be appreciated that the distance between WM6) and the first lenses 116 may be equal to 1/3 of the distance between the second lenses 118 and the magnified images 120a and 120b. This is shown schematically in FIG. 6. Other configurations may be used.

It will be appreciated that the distance between the mirrors 12, 14 determines the position in the direction of the optical arms in which the magnified images 120a, 120b of the substrate marks WM5, WM6 are found. If the mirrors 12, 14 are located farther from each other, the magnified images 120a, 120b will move left and right, respectively. The position in the vertical direction along the orientation shown in FIG. 6, in which magnified images 120a, 120b can be found, is the focal lengths of the lenses 116, 118, as one skilled in the art can readily understand. Depends on They are selected such that, for example, the enlarged images 120a, 120b are at the same (vertical) level as the substrate marks WM3, WM4 located in front of the substrate W, as shown in FIG. May be

The remainder of the alignment hardware may be similar to the hardware used in systems where no magnification is provided. Therefore, the magnified images 120a, 120b of the substrate marks WM5, WM6 may preferably be sized to be detectable by the optics present to perform the alignment measurement. To achieve this, the substrate marks WM5, WM6 may be smaller, ie even more than the substrate markers WM1, WM2 used in the example mentioned in FIG. 2, where no magnification is provided. It may be a small factor (M).

As a result of the magnification M, the movement of the substrate W can be enlarged to a factor of M, so that a part of the alignment error is reduced. Therefore, σ _BS defined in Equation 2 is replaced with a new value represented by σ _{BS, M} :

In some cases, the value for sigma _{BS, M} is much smaller than the value of sigma _FS that can be obtained using a direct measurement of the wafer marks WM3, WM4 located in front of the substrate W.

Due to the magnification, the displacement of the substrate W in one direction with respect to the optical system causes the magnification M to correspond to the corresponding images 120a and 120b of the substrate marks WM5 and WM6 on the underside of the substrate. Note that it can be used to displace it. For example, in FIG. 6, when the substrate W is displaced to the right by a predetermined distance, the images 120a and 120b may be displaced to the left by M times the predetermined distance. In the case of determining the position of the substrate marks WM5 and WM6, and in adjusting the relative positions of the mask and the substrate W when performing the alignment, software for controlling the alignment system can be considered.

In an alternative embodiment of the invention, the substrate table WT may be provided with a mirror arrangement that does not change the direction of movement of the images 120a and 120b relative to the movement of the substrate marks WM5 and WM6. As will be appreciated by those skilled in the art, this can be done in a variety of ways. This can be done using techniques similar to reflex cameras, for example by using a mirror in combination with a prism.

According to equation (2), in order to obtain sigma _BS = 7.26 nm, a value of sigma _FS = 7.1 nm and a value of sigma _BF = 1.5 nm are required. When the substrate table WT according to the present invention is used, for example, if a magnification factor M = 3 is provided _, the value of sigma _{BS, M} is sigma _{BS, M} = 2.80 nm. The new value for the overlay O _M will be obtained from the following equation:

It can be seen that using back alignment at the magnification according to the present invention can provide more accurate results than using conventional back alignment, or even using front alignment.

Mainly, the present invention can also be used for substrate marks provided on the front side of the substrate W. FIG. Variants can be implemented to incorporate the design for the front of the substrate table WT. The magnification optics may need to be fixed to the substrate table WT such that movements of the substrate table WT are not magnified.

As a result of the fact that the optical system embedded in the substrate table WT provides an enlarged image at a predetermined magnification M, the position of the substrate marks WM5 and WM6 can be determined in a more accurate manner. It will be appreciated that the capture range of the system can be reduced by a factor which is the magnification factor M. The capture range is the area in the x and y directions in which the substrate marker can be positioned to detect the right mark position by the measurement system. As a result, in order to find the substrate marks WM5, WM6, the positioning of the substrate W relative to the optical arms embedded in the substrate table WT may need to be done more accurately.

However, this is a substrate as shown in FIG. 7, in which a first pair of optical arms 110a, 110b not providing magnification is used, and a second pair of optical arms 110c, 110d providing magnification are used. It can be solved by providing a table WT. The substrate W is provided with first substrate marks WM1 and WM2 positioned such that the first substrate marks WM1 and WM2 can be detected through the first pair of optical arms 110a and 110b. Can be. Further, on the substrate W, second substrate marks WM5 and WM6 are positioned so that the second substrate marks WM5 and WM6 can be detected through the second pair of optical arms 110c and 110d. More may be provided. The first substrate marks WM1 and WM2 have a 'normal' size, which means that the marks do not provide magnification according to the current state of the art and the optical arms 110a, 110b. It can be detected through). The second substrate marks WM5 and WM6 have a reduced size, according to the magnification factor M embedded in the optical arms 110c and 110d.

Thus, the capture range of the first substrate marks WM1, WM2 is greater than the capture range of the second substrate marks WM5, WM6. Now, alignment can be performed in two phases. First, the alignment position can be determined by using the first substrate marks WM1, WM2 through the first pair of optical arms 110a, 110b. This can provide rough alignment information. This schematic alignment information is used to find the second substrate marks WM5 and WM6 during the second alignment state, where the fine alignment position is through the second pair of optical arms 110c and 110d. Are determined by using WM5 and WM6.

In an alternative embodiment of the invention, a substrate table WT having a mix of optical arms, having different orientations (eg x and y directions) and having different magnifications can be designed. In practice, three or more optical branches with different magnifications M may be provided. For example, three optical branches may be provided in one direction, the first optical branch has a magnification of 1, the second optical branch has a magnification of 3, and the third optical branch has a magnification of 9. . In that case, the substrate W is provided with three types of substrate marks, each having dimensions adapted to be used for one of the three optical arms. As such, a cascade of optical branches can be provided.

Using a plurality of optical branches, different alignment strategies can be implemented to improve overlay accuracy.

Further, the optical arms may be provided with a structure for varying the magnification M provided by the optics provided in the optical arms. For example, by varying the position of the lenses 116, 118 in the direction of the optical axes, the magnification M can be varied. According to another alternative embodiment, the magnification M can be varied by providing a mechanism for replacing one lens with another lens having a different focal length. With the use of these instruments, the magnification M can be changed depending on the situation. It can also be used to overcome the smaller capture range associated with the present invention.

In addition, the substrate W may be provided with substrate marks that can be used for different magnifications. FIG. 8 shows an example of such a substrate mark 200 and includes, for example, six (6) thin lines containing relatively thin lines located in groups to form relatively thick lines. Thick lines are used for measurements when using the first magnification factor M ₁ , while thin lines are used for measurements when using the second magnification factor M ₂ , where M ₁ <M ₂ . Those skilled in the art will appreciate that various other substrate marks may be considered that may be used in a manner similar to the substrate mark 200. In practice, typically all substrate marks having a pattern of two or more dimensions can be used.

Since the optical arms according to the invention provide an image of the substrate marks WM5, WM6 at a magnification M which allows for more accurate measurements, optical elements such as lenses 116, 118 and mirrors ( 12, 14) need to be known with high accuracy. However, these positions do not change every substrate W, and thus can be corrected by representing this error as a systematic error.

Also, to overcome the problem of small capture range associated with reduced substrate marks WM5, WM6, for example, conventional front substrate marks (I) to determine the position of the substrate W in the first situation. WM3, WM4) can be used. Based on this first determination position, the position of the substrate W can be determined in a more accurate manner by using the substrate marks WM5 and WM6 provided on the second surface of the substrate W. FIG.

This can be done, for example, if the substrate marks WM3, WM4 provided on the front side of the substrate W can still be used for conventional alignment, but more accurate alignment is required. In that case, more accurate alignment can be obtained by using substrate marks WM5, WM6 suitable for use in combination with optical arms provided with magnification. It will be appreciated that the present invention can be used to provide more accurate alignment on the back as well as the front. Providing the magnification M can be advantageously done to the optical arm provided in the substrate table WT.

The magnification factor M > 1 may be provided in the substrate table according to the present invention, but magnification factor M < If the substrate mark is outside the capture range of the alignment system, this substrate table WT can be used to solve the possible problem that the alignment system used cannot find the substrate mark. By providing a substrate table WT arranged to provide an image of a substrate mark at a magnification factor of less than one, the capture range is increased. It will then be understood that instead of the reduced substrate marks WM5, WM6, substrate marks whose size has been increased by factor 1 / M should be provided on the substrate W. Thus, when the magnification factor is selected to be M = 1/4, substrate marks increased by factor 4 (= 1 / ¼) are provided on the substrate W. FIG.

It will be appreciated that increasing the capture range means that the accuracy is reduced. When a magnification factor M = ¼ is used, the accuracy is reduced to factor 4, for example from 50 nm to 200 nm, while the captured image is increased from 88 μm to 352 μm, for example.

As described above, a substrate table WT having a mix of optical arms, having different orientations (eg, x and y directions), and having different magnifications can be designed. In practice, three or more optical branches with different magnifications M may be provided. For example, three optical branches may be provided in one direction, the first optical branch has a magnification of 1/4, the second optical branch has a magnification of 1, and the third optical branch has a magnification of 4 Has The substrate W may be provided with three types of substrate marks, each type having dimensions adapted for use with one of the three optical arms. As such, a cascade of optical branches can be provided.

It will be appreciated that the above-described embodiments are illustrative for practicing the present invention. Other configurations can be used to provide magnification M.

In addition, an enlarged image of the substrate marks can be obtained using fibers, convex and / or concave mirrors. Moreover, in order to reverse the orientation of the generated image of the substrate marks WM5, WM6, prisms similar to those used in the reflex camera can be used. Indeed, as long as the correct redirection, focal plane and magnification are obtained, all kinds of optical elements can be used.

Thus, the term magnification used in this application includes not only enlargement but also reduction or contraction.

An alternative embodiment of the invention, which is a schematic illustration of an optical arm provided in the substrate table WT, is illustrated in FIG. 9. The optical system includes two mirrors 212, 214 and two lenses 216, 218. The mirrors 212, 214 are inclined such that the sum of the angles that cause them to be horizontal is 90 °. In this way, a beam of light incident vertically on one of the mirrors will remain horizontal when reflected by the other mirror. Also, other ways of obtaining this 180 ° change in direction can be used, for example as described in more detail above.

An optical stop 219 is provided between the lenses 216, 218, which is provided with a central disk-shaped opening and an additional annular opening. The function of the optical stop 219 will be described in more detail below.

The substrate table WT is provided with a window 220 positioned over one of the mirrors 214. For ease of reference, this window will hereinafter be referred to as objective window 220, and the mirror will hereinafter be referred to as objective mirror 214. The second window 222 is provided in the substrate table WT above the other mirror 212. For ease of reference, this window will later be referred to as image window 222, which mirror will later be referred to as image mirror 212.

The objective window 220 is provided with a diffraction grating pattern 221 on its upper surface. Hereinafter, the diffraction grating pattern 221, which will be referred to as the object window alignment grating 221, will be described in more detail below. The substrate table WT is provided with an array of pimples 224 (use of the array of pimples is well known in the art). The substrate 226 is supported by the pimples and includes a substrate alignment grating 228 positioned over the objective window 220.

패턴(229)을 생성하도록 한다. The substrate alignment grating 228 includes a diffraction grating having a period of 5.33 microns. The object window alignment grating 221 has a period of 4 microns. The difference between the periods of the object window alignment grating 221 and the substrate alignment grating 228 is that it has a period of 16 microns just below the object window alignment grating.

Generate a pattern 229.

패턴의 이미지를 형성하도록 기능하며, 이후

패턴 이미지(230)라고 언급된다. 예를 들어, 회절 격자들을 검출하도록 배치된 검출기들의 세트를 포함할 수 있는 정렬 시스템(232)은

패턴 이미지(230) 위에 배치된다. 적절한 정렬 시스 템들이 당업자들에게 잘 알려져 있을 것이다. 정렬 시스템은, 기판(226)의 상부면상에 제공된 회절 격자가 측정되는 것과 동일한 방식으로

패턴 이미지(230)의 위치를 측정한다. Mirrors 212, 214 and lenses 216, 218 are positioned above image window 222.

Function to form an image of the pattern, and then

It is referred to as pattern image 230. For example, alignment system 232, which may include a set of detectors arranged to detect diffraction gratings,

It is disposed on the pattern image 230. Suitable alignment systems will be well known to those skilled in the art. The alignment system is operated in the same way that the diffraction grating provided on the upper surface of the substrate 226 is measured.

The position of the pattern image 230 is measured.

패턴으로부터 0 차수와 1 차수 광의 투과만을 허용한다. 이는 본 발명의 실시예의 성능을 개선시킨다.The optical aperture 219 provided between the lenses 216, 218 (through the central disk-shaped opening and the additional annular opening, respectively)

Only transmission of 0 and 1 order light from the pattern is allowed. This improves the performance of embodiments of the present invention.

패턴의 효과는, 기판(226)의 여하한의 이동을, 3배가 큰

패턴 이미지(230)의 이동으로 확대시키는 것이다. 이는, 렌즈들(214, 216)이 배율을 제공할 필요 없이, 기판(226)의 보다 정확한 정렬이 달성될 수 있게 한다.

The effect of the pattern is that the movement of the substrate 226 is three times larger.

It is enlarged by the movement of the pattern image 230. This allows more accurate alignment of the substrate 226 to be achieved without the need for the lenses 214, 216 to provide magnification.

패턴(229)(및 그에 따른

패턴 이미지(230))의 이동량을 예시하고 있다. 도 10의 오른쪽은 대물 윈도우 정렬 격자(221)를 도시하고, 도 10의 좌측 상단은 제 1 위치(228a)내의 기판 정렬 격자를 도시하며, 도 10의 좌측 하단은 제 2 위치(228b)내의 기판 정렬 격자를 도시한다. 제 1 위치(228a)내의 기판 정렬 격자와 대물 윈도우 정렬 격자(221)의 조합에 의해 형성된

패턴은 도 10의 상부 절반내의

패턴(229a)으로서 도시된다. 제 2 위치(228b)내의 기판 정렬 격자와 대물 윈도우 정렬 격자(221)의 조합에 의해 형성된

패턴은 도 10의 하부 절반내의

패턴(229b)으로서 도시된다. 도 10으로부터, 기판 정렬 격자(228)의 작은 이동은

패턴(229)의 훨씬 더 큰 이동을 유도한다는 것을 알 수 있 다. 10 illustrates the movement between the object window alignment grating 221 and the substrate alignment grating 228.

Pattern 229 (and accordingly

The movement amount of the pattern image 230 is illustrated. The right side of FIG. 10 shows the object window alignment grating 221, the upper left side of FIG. 10 shows the substrate alignment grating in the first position 228a, and the lower left side of FIG. 10 shows the substrate in the second position 228b. Show the alignment grid. Formed by the combination of the substrate alignment grating and the object window alignment grating 221 in the first position 228a.

The pattern is in the upper half of FIG.

It is shown as a pattern 229a. Formed by the combination of the substrate alignment grating and the object window alignment grating 221 in the second position 228b.

The pattern is in the lower half of FIG.

It is shown as a pattern 229b. 10, the small movement of the substrate alignment grating 228 is

It can be seen that this leads to a much larger movement of the pattern 229.

패턴은, 16/n 주기 기판 정렬 격자와 16/(n+1) 주기 대물 윈도우 정렬 격자의 간섭(interference)으로 인해 유도될 수 있다. 상기에 언급되고 또한 도 10에 도시된 예시에서, 기판 정렬 격자(228)의 주기는 5.33 미크론이고, 대물 윈도우 정렬 격자(221)의 주기는 4 미크론이다. 기판 정렬 격자(228)에 의한 2.66 미크론의 이동된 거리는 8 미크론(즉, 2.66 x 3)만큼 이동하는

패턴(229)을 유도한다. Generally, having a cycle of 16 microns

The pattern can be induced due to the interference of the 16 / n periodic substrate alignment grating and the 16 / (n + 1) periodic object window alignment grating. In the example mentioned above and also shown in FIG. 10, the period of the substrate alignment grating 228 is 5.33 microns and the period of the object window alignment grating 221 is 4 microns. The shifted distance of 2.66 microns by the substrate alignment grating 228 shifts by 8 microns (ie, 2.66 x 3)

Induce pattern 229.

패턴의 이동량의 증가된 배수(increased multiplication)를 제공한다. 필요하다면, 상이한 주기를 갖는

패턴이 형성될 수 있음을 이해할 수 있을 것이다. 본 명세서에서는, 공지된 종래 기술의 소정 정렬 시스템들에 의해 용이하게 검출될 수 있다는 이유로 16 미크론 주기

패턴이 서술되지만, 여타의 적절한 주기가 사용될 수 있다. It will be appreciated that other values of n may be used, such as 5, 7 or greater. The use of a larger value of n

Provide increased multiplication of the pattern's shift. If necessary, having different periods

It will be appreciated that a pattern can be formed. In this specification, a 16 micron cycle because it can be easily detected by known alignment systems of known art

Although the pattern is described, other suitable periods may be used.

FIG. 11 illustrates the objective window 220 shown in FIG. 9 in more detail. The objective window 220 includes a first objective window alignment grating 221a extending in the x-direction and a second objective window alignment grating 221b extending in the y-direction. As is generally required to align the substrate correctly, these objective window alignment gratings allow the alignment of the substrate to be performed in the x and y directions.

패턴을 형성하지 않는다. 그 대신에, 기판 테이블(WT)내의 거울들(212, 214) 및 광학기(216, 218)는 기판 정렬 격자의 이미지를 형성한다. 이러한 정렬 격자 이미지의 이동은 기판의 이동에 대해 확대되지 않는다. 이는,

패턴이 캡처를 위해 사용되었다고 가정한 경우에 존재할 수 있는 것보다 더 큰 범위에 걸쳐 기판(226)의 캡처가 수행될 수 있기 때문에 유익하다. 일반적으로,

패턴(229)에 의해 제공된 캡처 범위는,

패턴에 의해 제공된 기판의 이동의 배율에 대해 역비례(inversely proportional)한다. 따라서, n = 3의 값에 대해서는,

패턴에 의해 제공된 캡처 범위가 3의 팩터만큼 감소된다. 캡처를 위해, 대물 윈도우(220)의 비-격자 영역(240) 위에 놓인 기판 정렬 마크를 이용하면, 이러한 캡처 범위의 감소가 회피된다. 캡처 범위라는 용어는, 정렬 시스템(232)이 기판의 위치를 결정할 수 있는 기판 위치들의 범위를 의미하도록 의도된다.Substantial region 240 of objective window 220 does not include any gratings. If the substrate alignment grating is positioned above this area 240, it is

Do not form a pattern. Instead, the mirrors 212, 214 and optics 216, 218 in the substrate table WT form an image of the substrate alignment grating. The movement of this alignment grid image is not magnified relative to the movement of the substrate. this is,

It is advantageous because the capture of the substrate 226 can be performed over a larger range than might be present if the pattern was used for capture. Generally,

The capture range provided by pattern 229 is

It is inversely proportional to the magnification of the movement of the substrate provided by the pattern. So for a value of n = 3,

The capture range provided by the pattern is reduced by a factor of three. For capture, using a substrate alignment mark overlying the non-lattice region 240 of the objective window 220 avoids this reduction of the capture range. The term capture range is intended to mean a range of substrate positions where the alignment system 232 can determine the position of the substrate.

Additionally or alternatively, an extra optical arm (not illustrated) may be provided in the substrate table WT to provide a non-lattice region 240 in the objective window 220. The extra optical arm has the same configuration as shown in FIG. 9 but with an objective window without an alignment grating provided. This extra optical arm can be used for capture.

패턴이 형성될 수 있다. 이는, 기판 정렬 격자(228)와 대물 윈도우 정렬 격자(221)간의 거리가 정렬 시스템에 의해 사용된 광의 파장의 배수, 또는 광의 파장의 배수 + 파장의 절반인지에 따라 달라진다. As described with respect to FIG. 9, the substrate alignment grating 228 does not touch the object window alignment grating 221, but instead is held above the object window alignment grating by the pimples 224. Depending on the distance between the substrate grating 228 and the object window alignment grating 221, an etched portion of the substrate alignment grating or a substrate (including a series of ridges in which the substrate alignment grating is provided within the substrate 226) By interference between unetched parts of the alignment grating

A pattern can be formed. This depends on whether the distance between the substrate alignment grating 228 and the object window alignment grating 221 is a multiple of the wavelength of light used by the alignment system, or a multiple of the wavelength of light plus a wavelength.

패턴이 형성되는지가 결정될 수 있는 정렬이 행해지기 이전에, 기판의 위치가 충분히 정확하다는 것을 보장함으로써, 이러한 문제가 극복될 수 있다.The net result of this effect can be understood by interpreting FIG. 10 in a different way, ie by considering the position of the substrate grating 238a to indicate a situation where the distance between the substrate and the object is by k times [lambda] / 2. (Where k is a natural number and λ is the wavelength of light used by the alignment system. The position of the lower half of FIG. 10 represents the same substrate at the same transverse position, but the non-lateral distance (λ / 4) Further away from the object window, the alignment system cannot determine whether the substrate is further away from the object window by λ / 4 or moved by 2.66 microns in the transverse direction, in fact, reducing the capture system's capture range by an additional factor of 2. By means of an etched portion of the substrate alignment grating or an unetched portion of the substrate alignment grating.

This problem can be overcome by ensuring that the position of the substrate is sufficiently accurate before alignment can be determined whether a pattern is formed.

패턴(229)이 형성되는 것을 보장하기 위해서는, 기판(226)과 대물 윈도우(220)간의 간격이 너무 크지 않아야 한다. 유용한 간격이 결정될 수 있는 한가지 방식은 Talbot 효과를 고려하는 것이다. Talbot 효과는 회절 격자의 반복되는 자기-이미징(self-imaming)이다. Talbot 길이는 DTalbot = 2*a^2/λ로 주어 지며, 여기서 a는 (기판에서의) 기판 정렬 격자의 공간 주기이고, λ는 정렬 시스템에 의해 사용된 파장이다. Talbot 길이는, 기판 정렬 격자가 강한 격자 이미지를 형성하는 기판 정렬 격자로부터의 그 거리를 나타낸다. 값들 n = 3의 경우, a = 5.33 미크론이고, λ는 632nm이며, DTalbot는 90 미크론이다.Good quality

To ensure that the pattern 229 is formed, the spacing between the substrate 226 and the object window 220 should not be too large. One way in which useful intervals can be determined is to consider the Talbot effect. The Talbot effect is repeated self-imaging of the diffraction grating. Talbot length is given by DTalbot = 2 * a ^ 2 / λ, where a is the spatial period of the substrate alignment grating (on the substrate), and λ is the wavelength used by the alignment system. Talbot length indicates its distance from the substrate alignment grating where the substrate alignment grating forms a strong grating image. For values n = 3, a = 5.33 microns, λ is 632 nm, and DTalbot is 90 microns.

The height of the pimples 224 provided on the substrate table may be selected such that there is a desired spacing between the substrate alignment grating 228 and the object window alignment grating 221. Alternatively or additionally, objective window 220 is positioned to move objective window alignment grating 221 closer to substrate alignment grating 228 as its top surface is raised above the top surface of substrate table WT. Can be. This may be done, for example, if the height of the pimples 224 is greater than the desired spacing between the object window alignment gratings 221 closer to the substrate alignment grating 228. The spacing between the object window alignment grating 221 and the substrate alignment grating 228 may be selected to be Talbot length, or may be selected to be any other suitable value.

The angle at which light from the alignment system is incident on the image window 222 can be kept as constant as possible. In addition, the unflatness of the underside of the substrate 226 may be kept to a minimum. This helps to ensure the accuracy of the alignment.

Those skilled in the art will appreciate that variations of the embodiments of the invention may be made without departing from the invention itself. For example, an alignment grid provided on the object window 221 may instead be provided on the image window 222. A disadvantage of this arrangement is that lenses 216 and 218 are required to transmit a grating with higher numerical aperture, and may also need to be larger to achieve equivalent accuracy.

While embodiments of the invention have been described in Figures 9-11 for front-to-backside alignment systems, it will be appreciated that embodiments of the invention may be implemented in a 'front' alignment system. This embodiment is illustrated in FIG. 12.

패턴(255)이 정렬 시스템 격자(251) 위에 형성되게 한다. 정렬 시스템(250)은

패턴(255)의 위치를 모니터링하도록 구성되며, 따라서 기판(253)의 위치가 정확하게 검출될 수 있게 한다.12, the alignment system 250 is provided with an alignment grid 251, which will be referred to as an alignment system grid later. Substrate 253 is provided with a substrate alignment grating 254. In use, the substrate 253 is positioned such that the substrate alignment grating 254 is positioned below the alignment system grating 251. this is

Allow pattern 255 to be formed over alignment system grating 251. Alignment system 250

It is configured to monitor the position of the pattern 255, thus allowing the position of the substrate 253 to be accurately detected.

The implementation described with respect to FIG. 12 provides many of the advantages described above with respect to FIGS. 9 through 11, including enlarging the effect of lateral movement of the substrate 253 to allow more accurate measurement of the substrate position. .

패턴(255)을 이용하지 않고 정렬 정보를 얻는 것이 바람직할 수도 있다. 이러한 이유로, 정렬 시스템에는

패턴을 선택적으로 필터링하는데 사용될 수 있는 추가 격자(예시되지 않음)가 제공될 수 있다. In some situations,

It may be desirable to obtain alignment information without using pattern 255. For this reason, the sorting system

Additional gratings (not shown) can be provided that can be used to selectively filter the pattern.

Those of ordinary skill in the art will be able to understand other embodiments, uses and advantages of the present invention, given the specification and practice of the invention disclosed herein. It is intended that the specification be considered by way of example only, and therefore, the scope of the present invention is intended to be limited only by the following claims.

According to the present invention, a substrate table, a substrate position measuring method, and a lithographic apparatus are provided that allow more accurate measurement of the substrate position located on the substrate table.

Claims (12)

In the apparatus for generating a pattern, A substrate table disposed to support a substrate having at least one substrate alignment grating; And An alignment grid is provided, including the provided window, The window alignment grating can be used by an alignment system together with the substrate alignment grating and the window alignment grating to determine the position of the substrate when the substrate is supported by the substrate table.

Characterized in that it is configured to form a pattern

Pattern generator. The method of claim 1, Wherein said window is provided in a substrate table.

Pattern generator. The method of claim 2, The window is the

Forming a portion of an optical arm comprising lenses that form an image of the pattern

Pattern generator. The method of claim 3, wherein The optical arm further comprises apertures and mirrors arranged to transmit light having the desired diffraction orders.

Pattern generator. The method of claim 2, The window is provided at one position where the substrate will be under the substrate alignment grating when supported by the substrate table.

Pattern generator. The method of claim 1, The window is provided in an alignment system.

Pattern generator. In the method for measuring the position of the substrate provided on the substrate table, The alignment grating provided on the substrate and the alignment grating provided on the window in the substrate table together

Providing the substrate at one location where the pattern will be formed, Using optics located within the substrate table

Forming an image of the pattern, Then, using the alignment system,

And measuring the position of the image of the pattern. The method of claim 7, wherein The period of the substrate alignment grating provides a desired magnification of the effect of transverse movement of the substrate.

And a period of said window alignment grating is selected to provide a pattern. The method of claim 7, wherein The period of the substrate alignment grating has a period that can be detected by the alignment system.

And a period of said window alignment grating is selected to provide a pattern. In the method for measuring the position of the substrate provided on the substrate table, The alignment grating provided on the substrate and the alignment grating provided on the window in the alignment system together

Providing the substrate at one location where the pattern will be formed, Then, using the alignment system,

Substrate position measuring method comprising the step of measuring the position of the pattern. The method of claim 10, The period of the substrate alignment grating provides a desired magnification of the effect of transverse movement of the substrate.

And a period of said alignment system alignment grating to provide a pattern. The method of claim 10, The period of the substrate alignment grating has a period that can be detected by the alignment system.

And a period of said alignment system grating is selected to provide a pattern.

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